TWI415157B - Field emission cathode device and field emission display - Google Patents

Field emission cathode device and field emission display Download PDF

Info

Publication number
TWI415157B
TWI415157B TW99146924A TW99146924A TWI415157B TW I415157 B TWI415157 B TW I415157B TW 99146924 A TW99146924 A TW 99146924A TW 99146924 A TW99146924 A TW 99146924A TW I415157 B TWI415157 B TW I415157B
Authority
TW
Taiwan
Prior art keywords
field emission
strip
cathode device
grid
emission cathode
Prior art date
Application number
TW99146924A
Other languages
Chinese (zh)
Other versions
TW201227790A (en
Inventor
Hai-Yan Hao
Jie Tang
Shou-Shan Fan
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW99146924A priority Critical patent/TWI415157B/en
Publication of TW201227790A publication Critical patent/TW201227790A/en
Application granted granted Critical
Publication of TWI415157B publication Critical patent/TWI415157B/en

Links

Landscapes

  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

The invention relates to an field emission cathode device. The field emission cathode device includes an insulated substrate, a plurality of linear cathodes, a plurality of insulation layers, a plurality of linear gate grids, a plurality of field emission cells, a plurality of fixed layers. The field emission cells are located on the intersection defined by the linear cathode and the linear gate grid. The field emission cells are electrically connect to the linear cathodes. The plurality of fixed layers is located on the surface of the linear gate grid and corresponding to the insulation layer. The linear gate grid is sandwiched by the insulation layer and the fixed layer. The plurality of fixed layers are located between the linear cathodes and are spaced apart from the linear cathodes. The field emission cathode device further meets the following conditions: D1 is equal to or less than a tenth of D2, wherein, the D1 is defined as an width of the insulation layer, D2 is defined as a distance between the centerlines of the two adjacent field emission cells. The invention also relates to a field emission display comprising the above-described field emission cathode device.

Description

場發射陰極裝置及場發射顯示器 Field emission cathode device and field emission display

本發明涉及一種場發射陰極裝置及場發射顯示器。 The invention relates to a field emission cathode device and a field emission display.

場發射顯示器係繼陰極射線管(CRT)顯示器及液晶(LCD)顯示器之後,最具發展潛力之下一代新興技術。相對於先前之顯示器,場發射顯示器具有顯示效果好、視角大、功耗小及體積小等優點,近年來越來越受到重視。 Field emission displays are the next generation of emerging technologies with the most potential after cathode ray tube (CRT) displays and liquid crystal (LCD) displays. Compared with the previous display, the field emission display has the advantages of good display effect, large viewing angle, low power consumption and small volume, and has received more and more attention in recent years.

一般而言,場發射顯示器的結構可分為二極型及三極型。所謂二極型即包括有陽極及陰極之場發射裝置,這種結構由於需要施加高電壓,而且均勻性及電子發射難以控制,僅適用於字元顯示,不適用於圖形及圖像顯示。三極型則係在二極型場發射裝置的基礎上增加柵網來控制電子發射的場發射裝置,可以實現在較低電壓條件下發出電子,而且電子發射容易通過柵網來精確控制。因此,三極型場發射顯示器中,這種由產生電子的陰極及引出電子並將電子加速的柵網構成的場發射陰極裝置成為目前較為常用的一種場發射陰極裝置。 In general, the structure of a field emission display can be divided into a two-pole type and a three-pole type. The so-called two-pole type includes a field emission device having an anode and a cathode. This structure is difficult to control due to the application of a high voltage, and uniformity and electron emission are difficult to control. It is only suitable for character display, and is not suitable for graphic and image display. The triode type is a field emission device that increases the grid to control the electron emission based on the dipole field emission device, and can emit electrons under a lower voltage condition, and the electron emission is easily controlled by the grid. Therefore, in a three-pole field emission display, such a field emission cathode device composed of a cathode for generating electrons and a grid for extracting electrons and accelerating electrons has become a field emission cathode device which is currently more commonly used.

請參閱圖1及圖2,先前技術中提供一種場發射陰極裝置100,其包括:一絕緣基底102;複數條形陰極電極104,該複數條形陰極 電極104平行且間隔設置於該絕緣基底102表面;複數場發射元件106,該複數場發射元件106間隔設置於複數條形陰極電極104的表面;複數介質條108,該複數介質條108平行且間隔設置於絕緣基底102之上,該複數介質條108與複數條形陰極電極104相互垂直,該複數介質條108覆蓋上述複數條形陰極電極104的部份區域,並相對於每一場發射元件106設有通孔;複數條形柵網110通過所述介質條108支撐,該複數條形柵網110與條形陰極電極104異面垂直。一固定層113設置於所述條形柵網110的遠離介質條108的上方。由於柵網110的材料多為金屬,而介質條108的材料多為絕緣材料,因此,柵網110與介質條108之間的結合不牢固。固定層113用於固定柵網110,使柵網110不易變形。 Referring to FIG. 1 and FIG. 2, a prior art field emission cathode device 100 is provided, which includes: an insulating substrate 102; a plurality of strip cathode electrodes 104, the plurality of strip cathodes The electrodes 104 are disposed in parallel and spaced apart from the surface of the insulating substrate 102; the plurality of field emission elements 106 are spaced apart from the surface of the plurality of strip-shaped cathode electrodes 104; the plurality of dielectric strips 108 are parallel and spaced apart The plurality of dielectric strips 108 are perpendicular to the plurality of strip-shaped cathode electrodes 104. The plurality of dielectric strips 108 cover a portion of the plurality of strip-shaped cathode electrodes 104 and are disposed relative to each of the field-emitting elements 106. There are through holes; a plurality of strip grids 110 are supported by the dielectric strips 108, and the plurality of strip grids 110 are perpendicular to the strip cathode electrodes 104. A fixed layer 113 is disposed above the strip grid 110 away from the dielectric strip 108. Since the material of the grid 110 is mostly metal, and the material of the dielectric strip 108 is mostly an insulating material, the bonding between the grid 110 and the dielectric strip 108 is not strong. The fixed layer 113 is used to fix the grid 110 so that the grid 110 is not easily deformed.

所述場發射陰極裝置100在應用過程中,場發射元件106在柵網110的電壓下發射出電子,該部份電子穿過柵網110。由於固定層113覆蓋部份陰極104,且固定層113僅對應場發射元件106的位置設有通孔。因此,固定層113的邊緣與場發射元件106的邊緣距離很近。穿過柵網110的電子受到靠近固定層113的柵網110的電壓的吸引進而打在固定層113上。固定層113在電子的打擊下發射出了較多的二次電子。該部份二次電子係由固定層113發射出,且其方向雜亂無章,進而導致像素點邊界發散呈現不規則圖形的現象。固定層113發射出二次電子後荷電逐漸形成一高電位,從而進一步吸引穿過柵網110的電子,使電子偏離其垂直於陰極電極104飛行的方向。請參閱圖3,應用所述場發射陰極裝置100的場發射顯示器的像素點邊界發散呈現不規則圖形的現象。 During application of the field emission cathode device 100, the field emission element 106 emits electrons at a voltage of the grid 110 that passes through the grid 110. Since the fixed layer 113 covers a portion of the cathode 104, and the fixed layer 113 only has a through hole corresponding to the position of the field emission element 106. Therefore, the edge of the pinned layer 113 is very close to the edge of the field emission element 106. The electrons passing through the grid 110 are attracted by the voltage of the grid 110 close to the fixed layer 113 and then hit the fixed layer 113. The fixed layer 113 emits a large amount of secondary electrons under the impact of electrons. The part of the secondary electron system is emitted by the fixed layer 113, and its direction is disordered, which leads to the phenomenon that the pixel point boundary is divergent and presents an irregular pattern. After the secondary layer 113 emits secondary electrons, the charge gradually forms a high potential, thereby further attracting electrons passing through the grid 110, causing the electrons to deviate from the direction perpendicular to the cathode electrode 104. Referring to FIG. 3, the pixel boundary of the field emission display of the field emission cathode device 100 is diverged to exhibit an irregular pattern.

有鑒於此,提供一種工作狀態時能夠獲得清晰像素的場發射陰極裝置及場發射顯示器實為必要。 In view of this, it is necessary to provide a field emission cathode device and a field emission display capable of obtaining clear pixels in an operational state.

一種場發射陰極裝置,包括:一絕緣基底;複數條形陰極相互平行且等間隔設置於該絕緣基底的表面;複數隔離體間隔設置於所述絕緣基底的表面;複數條形柵網相互平行且等間隔設置,該複數條形柵網與複數條形陰極異面垂直且交叉設置,每一條形柵網均通過所述隔離體支撐,與所述條形陰極間隔設置;複數場發射元件分別設置於所述複數條形陰極與所述複數條形柵網的交叉位置並與所述條形陰極電連接;複數固定層分別對應於所述複數隔離體設置於所述條形柵網表面,將條形柵網夾持於所述固定層與隔離體之間,所述複數隔離體分別位於所述複數條形陰極之間並與所述條形陰極間隔設置,所述場發射陰極裝置進一步滿足以下條件:D1小於等於D2/10,其中,所述隔離體的寬度定義為D1,相鄰二場發射元件的中心線之間的距離定義為D2。 A field emission cathode device comprising: an insulating substrate; a plurality of strip cathodes are parallel to each other and equally spaced on a surface of the insulating substrate; a plurality of spacers are spaced apart from a surface of the insulating substrate; the plurality of strip grids are parallel to each other At equal intervals, the plurality of strip grids are perpendicular to and intersect with the plurality of strip cathodes, and each strip grid is supported by the separator and spaced apart from the strip cathode; the plurality of field emission elements are respectively disposed And intersecting the plurality of strip-shaped cathodes with the plurality of strip-shaped grids and electrically connecting to the strip-shaped cathodes; the plurality of fixed layers respectively corresponding to the plurality of spacers disposed on the surface of the strip-shaped grid, a strip grid is sandwiched between the fixed layer and the separator, the plurality of separators are respectively located between the plurality of strip cathodes and spaced apart from the strip cathode, and the field emission cathode device further satisfies The following condition: D1 is less than or equal to D2/10, wherein the width of the spacer is defined as D1, and the distance between the center lines of adjacent two field emission elements is defined as D2.

一種場發射顯示器,其包括一陽極裝置及與該陽極裝置間隔設置的一場發射陰極裝置,該場發射陰極裝置包括:一絕緣基底;複數條形陰極相互平行且等間隔設置於該絕緣基底的表面;複數隔離體間隔設置於所述絕緣基底的表面;複數條形柵網相互平行且等間隔設置,並與複數條形陰極異面垂直,且每一條形柵網均通過隔離體支撐,與所述條形陰極間隔設置;複數場發射元件分別設置於所述複數條形陰極與所述複數條形柵網的交叉位置並與所述條形陰極電連接;複數固定層分別對應於所述複數隔離體設置 於柵網表面,將柵網夾持固定於所述固定層與隔離體之間,所述複數隔離體分別位於所述複數條形陰極之間並與所述條形陰極間隔設置,所述隔離體的設置進一步滿足以下條件:D1小於等於D2/10,其中,所述隔離體的寬度定義為D1,相鄰二場發射元件的中心線之間的距離定義為D2。 A field emission display comprising an anode device and a field emission cathode device spaced apart from the anode device, the field emission cathode device comprising: an insulating substrate; the plurality of strip cathodes being parallel to each other and equally spaced on the surface of the insulating substrate a plurality of spacers are disposed on the surface of the insulating substrate; the plurality of strip grids are parallel to each other and equally spaced, and are perpendicular to the plurality of strip cathodes, and each strip grid is supported by the spacers a strip-shaped cathode spacing arrangement; a plurality of field emission elements respectively disposed at intersections of the plurality of strip cathodes and the plurality of strip grids and electrically connected to the strip cathodes; the plurality of fixed layers respectively corresponding to the plurality of Isolator setting And clamping the grid between the fixed layer and the separator on the surface of the grid, wherein the plurality of spacers are respectively located between the plurality of strip cathodes and spaced apart from the strip cathode, the isolation The arrangement of the body further satisfies the following condition: D1 is less than or equal to D2/10, wherein the width of the spacer is defined as D1, and the distance between the center lines of adjacent two field emission elements is defined as D2.

與先前技術相比,本發明提供的場發射陰極裝置及場發射顯示器中採用的隔離體的寬度小於相鄰二場發射元件的中心線之間的距離的十分之一,因此,隔離體的寬度遠小於相鄰二場發射元件的中心線之間的距離,進一步地,位於隔離體之上的固定層的寬度遠小於相鄰兩場發射元件的中心線之間的距離。因此當柵網上施加電壓時,可有效降低由場發射元件發射出的電子打到固定層上的機率。從而減輕固定層的荷電效應,進而使場發射元件發射出的電子均沿著垂直於場發射元件表面的方向飛行,而不偏轉向固定層,在應用時可有效消除像素點邊界發散呈現不規則圖形的現象。 Compared with the prior art, the width of the spacer used in the field emission cathode device and the field emission display provided by the present invention is less than one tenth of the distance between the center lines of adjacent two field emission elements, and therefore, the spacer The width is much smaller than the distance between the centerlines of adjacent two field emission elements, and further, the width of the fixed layer above the spacer is much smaller than the distance between the centerlines of the adjacent two field emission elements. Therefore, when a voltage is applied to the grid, the probability of electrons emitted by the field emission element hitting the fixed layer can be effectively reduced. Thereby reducing the charging effect of the fixed layer, and then the electrons emitted by the field emission element fly in a direction perpendicular to the surface of the field emission element without deflecting to the fixed layer, which can effectively eliminate the pixel point boundary divergence and exhibit irregular patterns when applied. The phenomenon.

10、100、202‧‧‧場發射陰極裝置 10, 100, 202‧‧ ‧ field emission cathode device

12、102、204、214‧‧‧絕緣基底 12, 102, 204, 214‧‧ ‧ insulating substrate

14、104、206‧‧‧陰極電極 14, 104, 206‧‧‧ cathode electrode

16、106、222‧‧‧場發射元件 16, 106, 222‧‧ ‧ field emission components

18、108、208‧‧‧隔離體 18, 108, 208‧‧ ‧ Isolation

20、110、210‧‧‧柵網 20, 110, 210‧‧‧ grid

22、224、113‧‧‧固定層 22, 224, 113‧‧‧ fixed layer

24、226‧‧‧導電層 24, 226‧‧‧ conductive layer

121‧‧‧絕緣基底的第一表面 121‧‧‧The first surface of the insulating substrate

122‧‧‧絕緣基底的第二表面 122‧‧‧Second surface of the insulating substrate

162、222‧‧‧電子發射體 162, 222‧‧‧ electron emitters

200‧‧‧場發射顯示器 200‧‧ ‧ field emission display

216‧‧‧透明陽極 216‧‧‧Transparent anode

218‧‧‧螢光層 218‧‧‧Fluorescent layer

212‧‧‧陽極裝置 212‧‧‧Anode device

222‧‧‧絕緣支撐體 222‧‧‧Insulation support

圖1為先前技術中的場發射陰極裝置的俯視圖。 1 is a top plan view of a field emission cathode device of the prior art.

圖2為圖1中場發射陰極裝置沿Ⅱ-Ⅱ線的剖視圖。 Figure 2 is a cross-sectional view of the field emission cathode device of Figure 1 taken along line II-II.

圖3為先前技術中的場發射顯示器的顯示效果圖。 Fig. 3 is a view showing the display effect of the field emission display in the prior art.

圖4係本發明第一實施例提供的場發射陰極裝置的立體結構示意圖。 4 is a schematic perspective view showing a field emission cathode device according to a first embodiment of the present invention.

圖5為圖4中場發射陰極裝置沿V-V線的剖視圖。 Figure 5 is a cross-sectional view of the field emission cathode device of Figure 4 taken along line V-V.

圖6為本發明第一實施例提供的場發射陰極裝置的俯視圖。 Figure 6 is a plan view of a field emission cathode device according to a first embodiment of the present invention.

圖7為本發明第二實施例提供的場發射陰極裝置的俯視圖。 Figure 7 is a top plan view of a field emission cathode device according to a second embodiment of the present invention.

圖8為本發明第三實施例提供的場發射陰極裝置的俯視圖。 Figure 8 is a top plan view of a field emission cathode device according to a third embodiment of the present invention.

圖9為採用本發明實施例提供的場發射陰極裝置的場發射顯示器的剖面圖。 9 is a cross-sectional view of a field emission display employing a field emission cathode device according to an embodiment of the present invention.

圖10為圖9中的場發射顯示器的顯示效果圖。 Fig. 10 is a view showing the display effect of the field emission display of Fig. 9.

以下將結合附圖詳細說明本發明實施例提供的場發射陰極裝置及場發射顯示器。 The field emission cathode device and the field emission display provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

請參閱圖4及圖5,本發明第一實施例提供一種場發射陰極裝置10,其包括:一絕緣基底12、複數條形陰極14、複數場發射元件16、複數隔離體18、複數條形柵網20、複數固定層22及複數導電層24。所述複數條形陰極14相互平行且等間隔設置於該絕緣基底12表面。所述複數隔離體18間隔設置於所述絕緣基底12表面,並設置於所述複數條形陰極14之間。所述複數隔離體18與所述條形陰極14間隔設置。所述複數條形柵網20相互平行且等間隔設置,並與條形陰極14異面垂直且交叉設置。每一條形柵網20通過複數隔離體18支撐。所述複數場發射元件16分別設置於所述複數條形陰極14與所述複數條形柵網20的交叉位置並與所述條形陰極14電連接。所述複數固定層22分別對應於所述複數隔離體18設置於柵網20表面,將柵網20夾持固定於所述固定層22與隔離體18之間。所述複數導電層24分別設置於所述複數固定層22遠離柵網20的表面 。 Referring to FIG. 4 and FIG. 5, a first embodiment of the present invention provides a field emission cathode device 10 including: an insulating substrate 12, a plurality of strip cathodes 14, a plurality of field emission elements 16, a plurality of spacers 18, and a plurality of strips. The grid 20, the plurality of fixed layers 22, and the plurality of conductive layers 24. The plurality of strip cathodes 14 are disposed parallel to each other and equally spaced on the surface of the insulating substrate 12. The plurality of spacers 18 are spaced apart from the surface of the insulating substrate 12 and disposed between the plurality of strip cathodes 14. The plurality of separators 18 are spaced apart from the strip cathodes 14. The plurality of strip grids 20 are arranged parallel to each other and equally spaced, and are disposed perpendicular to and perpendicular to the strip cathodes 14. Each of the strip grids 20 is supported by a plurality of spacers 18. The plurality of field emission elements 16 are respectively disposed at intersections of the plurality of strip cathodes 14 and the plurality of strip grids 20 and are electrically connected to the strip cathodes 14. The plurality of fixed layers 22 are respectively disposed on the surface of the grid 20 corresponding to the plurality of spacers 18, and the grid 20 is clamped and fixed between the fixed layer 22 and the separator 18. The plurality of conductive layers 24 are respectively disposed on the surface of the plurality of fixed layers 22 away from the grid 20 .

所述絕緣基底12的材料為玻璃、陶瓷或二氧化矽等絕緣材料。本實施例中,所述絕緣基底12材料為玻璃。所述絕緣基底12用於承載所述複數條形陰極14、複數場發射元件16、複數隔離體18及複數條形柵網20。所述絕緣基底12包括一第一表面121及一與第一表面121相對的第二表面122。在所述絕緣基底12的第一表面121定義相互垂直的第一方向X及第二方向Y。所述第一方向X與第二方向Y均平行於所述第一表面121。 The material of the insulating substrate 12 is an insulating material such as glass, ceramic or cerium oxide. In this embodiment, the insulating substrate 12 is made of glass. The insulating substrate 12 is configured to carry the plurality of strip cathodes 14, the plurality of field emission elements 16, the plurality of spacers 18, and the plurality of strip grids 20. The insulating substrate 12 includes a first surface 121 and a second surface 122 opposite the first surface 121. A first direction X and a second direction Y perpendicular to each other are defined on the first surface 121 of the insulating substrate 12. The first direction X and the second direction Y are both parallel to the first surface 121.

所述複數條形陰極14中的每一條形陰極14的形狀均為長條形或帶狀,所述複數條形陰極14相互平行且等間距地間隔設置於絕緣基底12的第一表面121。所述每一條形陰極14均平行於所述第一方向X。所述複數條形陰極14的材料可選擇為銅、鋁、金或銀等金屬,或銦錫氧化物(ITO)等導電材料。本實施例中,所述每一條形陰極14為銀電極。 Each of the plurality of strip-shaped cathodes 14 has an elongated strip shape or a strip shape, and the plurality of strip-shaped cathodes 14 are disposed at equal intervals and spaced apart from each other on the first surface 121 of the insulating substrate 12. Each strip cathode 14 is parallel to the first direction X. The material of the plurality of strip cathodes 14 may be selected from a metal such as copper, aluminum, gold or silver, or a conductive material such as indium tin oxide (ITO). In this embodiment, each strip cathode 14 is a silver electrode.

所述複數條形柵網20中的每一條形柵網20的形狀均為長條形或帶狀,所述複數條形柵網20相互平行且等間距間隔設置。優選地,所述複數條形柵網20之間的間距與所述複數條形陰極14之間的間距相等。所述複數條形柵網20與複數條形陰極14異面垂直且交叉設置。在相互交叉的位置,所述條形柵網20與所述條形陰極14在垂直於所述第一表面121方向上的間距大於等於18微米。所述條形柵網20為一網狀結構,其包括複數均勻分佈的柵孔,柵孔的孔徑為3微米至1000微米。優選地,所述條形柵網20為一金屬網。本實施例中,所述條形柵網20為一不銹鋼網,所述條形柵網20與 所述複數條形陰極14之間的間距為20微米。 Each of the plurality of strip-shaped grids 20 has an elongated strip shape or a strip shape, and the plurality of strip-shaped grids 20 are disposed parallel to each other and equally spaced apart. Preferably, the spacing between the plurality of strip grids 20 is equal to the spacing between the plurality of strip cathodes 14. The plurality of strip grids 20 are perpendicular to and perpendicular to the plurality of strip cathodes 14. In the mutually intersecting positions, the strip grid 20 and the strip cathode 14 have a pitch in the direction perpendicular to the first surface 121 of 18 μm or more. The strip grid 20 is a mesh structure comprising a plurality of uniformly distributed gate holes having a pore size of from 3 micrometers to 1000 micrometers. Preferably, the strip grid 20 is a metal mesh. In this embodiment, the strip grid 20 is a stainless steel mesh, and the strip grid 20 is The spacing between the plurality of strip cathodes 14 is 20 microns.

所述複數場發射元件16相互間隔分佈於複數條形陰極14遠離絕緣基底12的表面,優選地,所述複數場發射元件16呈矩陣排列。所述場發射元件16可僅設置在所述條形陰極13與所述條形柵網20的交叉位置。本技術領域人員可理解,所述場發射元件16也可設置在所述整個條形陰極14的表面。每一場發射元件16包括複數電子發射體162,該每一電子發射體162可選擇為金屬微尖、矽尖、奈米碳管或其他電子發射體。所述場發射元件16中的電子發射體162可為奈米碳管陣列、奈米碳管線、奈米碳管漿料或者奈米碳管膜。本實施例中,所述場發射元件16為一奈米碳管陣列。 The plurality of field emission elements 16 are spaced apart from each other across a surface of the plurality of strip cathodes 14 away from the insulating substrate 12. Preferably, the plurality of field emission elements 16 are arranged in a matrix. The field emission element 16 may be disposed only at an intersection of the strip cathode 13 and the strip grid 20. Those skilled in the art will appreciate that the field emission element 16 can also be disposed on the surface of the entire strip cathode 14. Each field of radiating elements 16 includes a plurality of electron emitters 162, each of which may be selected as a metal microtip, a tip, a carbon nanotube, or other electron emitter. The electron emitter 162 in the field emission element 16 can be a carbon nanotube array, a nano carbon pipeline, a carbon nanotube slurry, or a carbon nanotube membrane. In this embodiment, the field emission element 16 is an array of carbon nanotubes.

所述複數隔離體18用於支撐柵網20。通過所述複數隔離體18使所述柵網20與所述條形陰極14在垂直於所述第一表面121方向上間隔一定距離且彼此絕緣。所述複數隔離體18僅設置在位於所述條形陰極14之間的所述絕緣基底12的第一表面121。所述隔離體18與所述條形陰極14間隔設置。優選地,所述隔離體18為條形,且平行於所述條形陰極14設置。所述每一隔離體18距與之相鄰的二條形陰極14之間的距離相等。所述每一隔離體18距與之相鄰的二場發射元件16之間的距離相等。 The plurality of spacers 18 are used to support the grid 20. The grid 20 and the strip cathode 14 are spaced apart from each other by a distance from the first surface 121 and insulated from each other by the plurality of separators 18. The plurality of spacers 18 are disposed only on the first surface 121 of the insulating substrate 12 between the strip cathodes 14. The separator 18 is spaced apart from the strip cathode 14. Preferably, the separator 18 is strip-shaped and disposed parallel to the strip cathode 14. Each of the spacers 18 is equidistant from the distance between the two cathodes 14 adjacent thereto. Each of the spacers 18 is equidistant from the distance between the two field emission elements 16 adjacent thereto.

所述隔離體18的材料為玻璃、陶瓷或二氧化矽等絕緣材料。本實施例中,所述複數隔離體18中的每一隔離體均為一長方體,其具有長、寬、高三尺寸。所述每一隔離體18的長度方向平行於第一方向X。所述每一隔離體18的寬度方向平行於第二方向Y。所述每一隔離體18的高度方向為垂直於絕緣基底12的第一表面121。本 實施例中沿第一方向X,在相鄰的二條形陰極14之間設置複數隔離體18分別支撐每一條形柵網20。 The material of the separator 18 is an insulating material such as glass, ceramic or cerium oxide. In this embodiment, each of the plurality of spacers 18 is a rectangular parallelepiped having a length, a width, and a height. The length direction of each of the spacers 18 is parallel to the first direction X. The width direction of each of the separators 18 is parallel to the second direction Y. The height direction of each of the spacers 18 is perpendicular to the first surface 121 of the insulating substrate 12. this In the embodiment, in the first direction X, a plurality of spacers 18 are disposed between adjacent two cathodes 14 to support each of the strip grids 20, respectively.

請參閱圖6,為降低荷電效應的影響,所述場發射陰極裝置10進一步滿足以下條件: Referring to FIG. 6, in order to reduce the influence of the charging effect, the field emission cathode device 10 further satisfies the following conditions:

(1)D1小於等於D2/10,其中,所述隔離體18的寬度定義為D1,相鄰二場發射元件16的中心線之間的距離定義為D2。 (1) D1 is less than or equal to D2/10, wherein the width of the spacer 18 is defined as D1, and the distance between the center lines of the adjacent two field emission elements 16 is defined as D2.

(2)D3/D2大於等於0.125且D3/D2小於等於0.48,其中,所述場發射元件16的徑向尺寸定義為D3。 (2) D3/D2 is greater than or equal to 0.125 and D3/D2 is less than or equal to 0.48, wherein the radial dimension of the field emission element 16 is defined as D3.

(3)H大於等於5μm且H小於等於100μm;其中,所述隔離體18的高度定義為H。 (3) H is greater than or equal to 5 μm and H is less than or equal to 100 μm; wherein the height of the separator 18 is defined as H.

條件式(1)限定隔離體18在Y方向的寬度D1與相鄰二場發射元件16之間的距離D2之間的關係。在相鄰二場發射元件16的中心線之間的距離D2一定的條件下,隔離體18的寬度小於D2的十分之一,因此,隔離體18的寬度較小,進一步地位於隔離體18之上的固定層22的寬度也較小。固定層22的遠離柵網20的表面的寬度也較小,固定層22的的遠離柵網20的表面的面積也越小。因此,場發射元件16發射出的電子通過柵網20後,可減少電子打到固定層22的遠離柵網20的表面的機率,從而可有效減輕荷電效應。一般地D2小於等於5毫米。可選擇地,D2的範圍大於等於3毫米且小於等於5毫米。D1小於等於500微米且大於等於100微米。優選地D1的範圍為200微米至400微米。隔離體18的寬度應保證可使其支撐柵網20並保持柵網20不變形。本實施例中,所述D2為1.5毫米。D1為 300微米。 The conditional expression (1) defines the relationship between the width D1 of the separator 18 in the Y direction and the distance D2 between the adjacent two field emission elements 16. Under the condition that the distance D2 between the center lines of the adjacent two field emission elements 16 is constant, the width of the spacer 18 is less than one tenth of D2, and therefore, the width of the spacer 18 is small, further located in the spacer 18. The width of the fixed layer 22 above is also small. The width of the surface of the fixed layer 22 remote from the grid 20 is also small, and the area of the surface of the fixed layer 22 remote from the grid 20 is also small. Therefore, after the electrons emitted from the field emission element 16 pass through the grid 20, the probability of electrons hitting the surface of the fixed layer 22 away from the grid 20 can be reduced, thereby effectively reducing the charging effect. Generally D2 is less than or equal to 5 mm. Alternatively, the range of D2 is greater than or equal to 3 mm and less than or equal to 5 mm. D1 is less than or equal to 500 microns and greater than or equal to 100 microns. Preferably, D1 ranges from 200 microns to 400 microns. The width of the spacer 18 is such that it can support the grid 20 and keep the grid 20 from deforming. In this embodiment, the D2 is 1.5 mm. D1 is 300 microns.

條件式(2)限制場發射元件16的徑向尺寸,尤其係場發射元件16沿Y方向的尺寸。進一步地,可以使得所述隔離體18與場發射元件16之間的距離D4較大。即,隔離體18的邊緣與場發射元件16的邊緣的距離較大。D4大於等於150微米。可選擇地,D4為200微米。進而固定層22的邊緣與場發射元件16的邊緣的距離也較大,因此,可進一步減少場發射元件16發射出的電子,打到固定層22的機率,從而可進一步地減輕荷電效應。D3小於等於2400微米。優選地,D3大於等於500微米且小於等於1300微米。可選擇地,D3為1000微米。本實施例中,D3為400微米,D4為250微米。 Conditional expression (2) limits the radial dimension of field emission element 16, in particular the size of field emission element 16 in the Y direction. Further, the distance D4 between the separator 18 and the field emission element 16 can be made larger. That is, the distance between the edge of the spacer 18 and the edge of the field emission element 16 is large. D4 is greater than or equal to 150 microns. Alternatively, D4 is 200 microns. Further, the distance between the edge of the pinned layer 22 and the edge of the field emission element 16 is also large, and therefore, the electrons emitted from the field emission element 16 can be further reduced, and the probability of hitting the pinned layer 22 can be further reduced, thereby further reducing the charging effect. D3 is less than or equal to 2400 microns. Preferably, D3 is greater than or equal to 500 microns and less than or equal to 1300 microns. Alternatively, D3 is 1000 microns. In this embodiment, D3 is 400 microns and D4 is 250 microns.

條件式(3)限定所述隔離體18的高度H大於等於5微米且小於等於100微米。優選地,隔離體18的高度H大於等於10微米且小於等於15微米。本發明中隔離體18的高度較低,則柵網20的高度較低,柵網20僅需施加較低的電壓就可以從場發射元件中拔出電子。柵網20的電壓較小,進而固定層22附近的柵網20的對場發射元件16發射出的電子的吸引力也越小,進而,場發射元件16發射出的電子不易在固定層22附近的柵網20的電壓作用下打到固定層22的表面,可進一步地減輕荷電效應。 The conditional expression (3) defines that the height H of the separator 18 is 5 μm or more and 100 μm or less. Preferably, the height H of the separator 18 is greater than or equal to 10 micrometers and less than or equal to 15 micrometers. In the present invention, the height of the spacer 18 is low, and the height of the grid 20 is low. The grid 20 can extract electrons from the field emission element only by applying a lower voltage. The voltage of the grid 20 is small, and thus the attraction of the electrons emitted from the field emission element 16 of the grid 20 near the fixed layer 22 is also small. Further, the electrons emitted from the field emission element 16 are not easily near the fixed layer 22. The voltage of the grid 20 hits the surface of the fixed layer 22, which further reduces the charging effect.

本技術領域人員可以理解,條件式(2)、(3)係可選擇地,非本發明的必要技術特徵,本技術領域人員可依據所述場發射陰極裝置10的不同應用情形而進行調整。 Those skilled in the art can understand that the conditional formulas (2) and (3) are optional, and are not necessary technical features of the present invention, and those skilled in the art can adjust according to different application scenarios of the field emission cathode device 10.

複數固定層22分別對應所述複數隔離體18設置,將複數條形柵網 20固定於所述隔離體18與固定層22之間。所述固定層22僅覆蓋柵網20的位於隔離體18之上的區域的表面。柵網20設置於所述固定層22與所述隔離體18之間。如此可使柵網20不易因為發生變形造成柵網20及條形陰極14之間的間距不均勻,進而影響場發射陰極裝置10均勻地發射電子。因此,該場發射陰極裝置10結構穩定,不易受外界環境的影響。 The plurality of fixed layers 22 are respectively disposed corresponding to the plurality of spacers 18, and the plurality of strips are arranged 20 is fixed between the separator 18 and the fixed layer 22. The pinned layer 22 covers only the surface of the area of the grid 20 above the separator 18. A grid 20 is disposed between the fixed layer 22 and the separator 18. In this way, the grid 20 is not easily deformed due to deformation, and the spacing between the grid 20 and the strip cathode 14 is not uniform, thereby affecting the uniform emission of electrons by the field emission cathode device 10. Therefore, the field emission cathode device 10 has a stable structure and is not easily affected by the external environment.

所述固定層22填充柵網20的位於隔離體18上方的柵孔。通過柵網20的柵孔,固定層22與隔離體18結合在一起,從而固定柵網20。所述固定層22的材料可為絕緣介質,例如,玻璃、陶瓷或者二氧化矽。優選地,固定層22的材料與隔離體18的材料相同,如此可使固定層22與隔離體18較好的相容並牢固的結合,進而牢固地固定柵網20。通常,所述固定層22可採用絲網印刷的方法製備,在製備過程中,所述固定層22會滲透到所述柵網20的柵孔內,並與所述隔離體18接觸,實現更好地固定。而所述固定層22對應柵網20的非柵孔區域的厚度極小,通常小於等於10微米,固定層22不會影響導電層24與柵網20的電連接。 The pinned layer 22 fills the gate holes of the grid 20 above the separator 18. The fixed layer 22 is bonded to the separator 18 through the gate holes of the grid 20, thereby fixing the grid 20. The material of the pinned layer 22 may be an insulating medium such as glass, ceramic or cerium oxide. Preferably, the material of the fixing layer 22 is the same as that of the separator 18, so that the fixing layer 22 and the separator 18 are better compatible and firmly bonded, thereby firmly fixing the grid 20. Generally, the fixing layer 22 can be prepared by a screen printing method. During the preparation process, the fixing layer 22 penetrates into the gate hole of the grid 20 and contacts the separator 18 to realize more. Well fixed. The thickness of the non-gate hole region of the fixed layer 22 corresponding to the grid 20 is extremely small, usually less than or equal to 10 micrometers, and the fixed layer 22 does not affect the electrical connection between the conductive layer 24 and the grid 20.

所述導電層24的材料可為金屬、合金、氧化銦錫、銻錫氧化物、導電銀膠、導電聚合物或奈米碳管。本實施例中,所述導電層24的材料為銀漿料。採用絲網印刷的方法於固定層22上製備導電層24。在製備過程中,導電層24為流體狀的銀漿料,因此,銀漿料容易沿固定層22、柵網20及隔離體18的側壁流淌至絕緣基板12。由於隔離體18及條形陰極14間隔設置且保持一定距離,防止陰極14及柵網20短路。所述導電層24為可選擇結構。 The material of the conductive layer 24 may be metal, alloy, indium tin oxide, antimony tin oxide, conductive silver paste, conductive polymer or carbon nanotube. In this embodiment, the material of the conductive layer 24 is a silver paste. Conductive layer 24 is prepared on fixed layer 22 by screen printing. In the preparation process, the conductive layer 24 is a fluid silver paste, and therefore, the silver paste easily flows along the sidewalls of the fixed layer 22, the grid 20, and the separator 18 to the insulating substrate 12. Since the separator 18 and the strip cathode 14 are spaced apart and kept at a certain distance, the cathode 14 and the grid 20 are prevented from being short-circuited. The conductive layer 24 is of an alternative construction.

所述導電層24覆蓋固定層22的遠離柵網20的表面,進而使固定層22可產生二次電子的面積減小。所述導電層24還可導出電子發射體162發射出的一部份落到導電層24上電子,減少或避免該部份電子轟擊所述隔離體18產生二次電子。另外,電子發射體162發射出的一小部份電子直接轟擊所述隔離體18,使得該隔離體18發射二次電子,並在該隔離體18上產生正電荷,而該正電荷可通過所述導電層24及柵網20導走,減少或避免所述隔離體18上積累正電荷,進而使得該隔離體18周圍的電位基本不發生變化,從而減少電子發射體162發射的電子向四周發散的可能性,使電子集中射向預定位置,進而使得利用該場發射陰極裝置10的場發射顯示器的圖像顯示清晰、顯示效果較好。所述導電層24為可選擇結構。 The conductive layer 24 covers the surface of the fixed layer 22 away from the grid 20, thereby reducing the area of the secondary layer that can generate secondary electrons. The conductive layer 24 may also derive a portion of the electron emitter 162 that is emitted onto the conductive layer 24 to reduce or prevent the portion of electrons from bombarding the spacer 18 to generate secondary electrons. In addition, a small portion of electrons emitted by the electron emitter 162 directly bombards the separator 18 such that the separator 18 emits secondary electrons and generates a positive charge on the separator 18, and the positive charge can pass through The conductive layer 24 and the grid 20 are guided away to reduce or avoid the accumulation of positive charges on the separator 18, so that the potential around the separator 18 is substantially unchanged, thereby reducing the electrons emitted by the electron emitter 162 from diverging around. The possibility is that the electrons are concentrated to a predetermined position, so that the image of the field emission display using the field emission cathode device 10 is clear and the display effect is good. The conductive layer 24 is of an alternative construction.

場發射陰極裝置10在應用時,分別施加不同電壓給陰極14及柵網20。一般情況下,陰極14為接地或零電壓,柵網20的電壓為數十伏至數百伏左右。陰極14上場發射元件16中的電子發射體162所發出的電子在柵網20的電場作用下,向柵網20的方向運動,通過柵網20的柵孔發射出去。由於所述複數陰極14之間相互絕緣、所述複數柵網20之間相互絕緣,因此,通過選擇性地在某些陰極14及某些柵網20之間施加不同的電壓,可控制不同位置的場發射元件16發射電子,實現場發射陰極裝置10的定址功能,滿足其在場發射顯示器中的應用。 The field emission cathode device 10 applies different voltages to the cathode 14 and the grid 20, respectively, when applied. In general, the cathode 14 is grounded or zero voltage, and the voltage of the grid 20 is about several tens of volts to several hundreds of volts. The electrons emitted by the electron emitters 162 in the field emission element 16 on the cathode 14 move in the direction of the grid 20 by the electric field of the grid 20, and are emitted through the gate holes of the grid 20. Since the plurality of cathodes 14 are insulated from each other and the plurality of grids 20 are insulated from each other, different positions can be controlled by selectively applying different voltages between certain cathodes 14 and certain grids 20 The field emission element 16 emits electrons to effect the addressing function of the field emission cathode device 10 to meet its application in a field emission display.

本發明第二實施例提供一種場發射陰極裝置。請參閱圖7,該場發射陰極裝置的結構與第一實施例中的場發射陰極裝置10的結構 相似,其區別在於,在位於所述條形陰極14之間設置隔離體18時,沿第一方向X,相鄰的二條形陰極14之間僅設置一隔離體18同時支撐所述複數條形柵網20。當相鄰的二條形陰極14之間僅設置一隔離體18同時支撐所述複數條形柵網20時,所述固定層22可僅對應設置於所述隔離體18支撐柵網20位置,也可設置於整個隔離體18表面。 A second embodiment of the present invention provides a field emission cathode device. Referring to FIG. 7, the structure of the field emission cathode device and the structure of the field emission cathode device 10 in the first embodiment. Similarly, the difference is that, when the separator 18 is disposed between the strip cathodes 14, in the first direction X, only one separator 18 is disposed between the adjacent two cathodes 14 while supporting the plurality of strips. Grid 20. When only one spacer 18 is disposed between the adjacent two cathodes 14 while supporting the plurality of strips 20, the fixed layer 22 may be disposed only corresponding to the spacer 18 at the support grid 20, It can be disposed on the entire surface of the separator 18.

本發明第三實施例提供一種場發射陰極裝置。該場發射陰極裝置的結構與第一實施例中的場發射陰極裝置10的結構相似,其區別在於,所述隔離體無需設置在任意二相鄰的條形陰極之間,在確保所述隔離體能對條形柵網提供足夠的支撐力的前提下,可在第二方向Y上每間隔N個條形陰極或場發射元件設置一隔離體,其中N為大於1的整數。所述隔離體的數量越少,則位於隔離體之上的固定層的面積也越少,則固定層產生荷電效應的機率也越小。例如,請參閱圖8,沿所述第二方向Y,可每間隔三場發射元件16設置有一隔離體18。所述複數隔離體18的最少數量不限。在保證所述柵網20不變形的條件下,所述隔離體18的數量應儘量少。 A third embodiment of the present invention provides a field emission cathode device. The structure of the field emission cathode device is similar to that of the field emission cathode device 10 of the first embodiment, except that the separator does not need to be disposed between any two adjacent strip cathodes, ensuring the isolation. The physical energy provides sufficient support for the strip grid, and a spacer may be disposed in each of the N strip-shaped cathode or field emission elements in the second direction Y, where N is an integer greater than one. The smaller the number of the separators, the smaller the area of the fixed layer above the separator, and the lower the probability that the fixed layer will have a charging effect. For example, referring to FIG. 8, along the second direction Y, a spacer 18 may be disposed for each of the three field emission elements 16. The minimum number of the plurality of separators 18 is not limited. The number of the spacers 18 should be as small as possible while ensuring that the grid 20 is not deformed.

請參見圖9,本發明進一步提供一種使用上述場發射陰極裝置10的場發射顯示器200,該場發射顯示器200包括一陽極裝置212及與該陽極裝置212間隔設置的一場發射陰極裝置202。所述陽極裝置212與所述場發射陰極裝置202相對且保持一定距離間隔設置。所述場發射陰極裝置202可採用第一實施例中的場發射陰極裝置10。 Referring to FIG. 9, the present invention further provides a field emission display 200 using the field emission cathode device 10, the field emission display 200 including an anode device 212 and a field emission cathode device 202 spaced from the anode device 212. The anode device 212 is disposed opposite the field emission cathode device 202 and spaced apart by a distance. The field emission cathode device 202 can employ the field emission cathode device 10 of the first embodiment.

該場發射陰極裝置202包括一絕緣基底204、複數條形陰極206、 複數場發射元件222、複數隔離體208、複數條形柵網210、一固定層224及一導電層226。所述陽極裝置212與場發射陰極裝置202中的條形柵網210保持一定距離間隔設置。 The field emission cathode device 202 includes an insulating substrate 204, a plurality of strip cathodes 206, The plurality of field emission elements 222, the plurality of spacers 208, the plurality of strip grids 210, a fixed layer 224, and a conductive layer 226. The anode device 212 is disposed at a distance from the strip grid 210 in the field emission cathode device 202.

所述陽極裝置212包括一玻璃基底214,一透明陽極216及塗覆於透明陽極216上的複數螢光層218。所述透明陽極216可為氧化銦錫薄膜。所述陽極裝置212通過一絕緣支撐體220與場發射陰極裝置202中的絕緣基底204間隔設置,陽極裝置212與場發射陰極裝置202的邊緣密封設置,使得場發射陰極裝置202與陽極裝置212之間形成一真空環境。所述場發射陰極裝置202中的場發射元件222與陽極裝置212中的螢光層218一一對應設置,構成一像素單元。 The anode device 212 includes a glass substrate 214, a transparent anode 216, and a plurality of phosphor layers 218 coated on the transparent anode 216. The transparent anode 216 can be an indium tin oxide film. The anode device 212 is spaced apart from the insulating substrate 204 in the field emission cathode device 202 by an insulating support 220, and the anode device 212 is sealed from the edge of the field emission cathode device 202 such that the field emission cathode device 202 and the anode device 212 are A vacuum environment is formed between them. The field emission elements 222 in the field emission cathode device 202 are disposed in one-to-one correspondence with the phosphor layers 218 in the anode device 212 to form a pixel unit.

場發射顯示器200在應用時,分別施加不同電壓給條形陰極206、條形柵網210及陽極216。陰極206上場發射元件222中的電子發射體所發出的電子在柵網210的電場作用下,向柵網210的方向運動,通過柵網210的柵孔發射出去,在陽極216的電場作用下,最終打到陽極216,打在塗覆透明陽極216上的螢光層218,發出螢光,實現場發射顯示器200的顯示功能。由於條形陰極206之間相互絕緣、條形柵網210之間相互絕緣,因此,通過選擇性地在不同的條形陰極206及條形柵網210之間施加不同的電壓,可控制不同位置的場發射元件222發射電子,電子打在陽極裝置212的螢光層218的不同位置,從而使螢光層218的不同位置發光,使場發射顯示器200根據需要顯示不同的畫面。 The field emission display 200 applies different voltages to the strip cathode 206, the strip grid 210, and the anode 216, respectively, when applied. The electrons emitted by the electron emitters in the field emission element 222 of the cathode 206 move in the direction of the grid 210 under the electric field of the grid 210, and are emitted through the gate holes of the grid 210, under the electric field of the anode 216. Eventually, the anode 216 is struck, and the phosphor layer 218 coated on the transparent anode 216 is fired to realize the display function of the field emission display 200. Since the strip cathodes 206 are insulated from each other and the strip grids 210 are insulated from each other, different positions can be controlled by selectively applying different voltages between the different strip cathodes 206 and the strip grids 210. The field emission elements 222 emit electrons that are struck at different locations on the phosphor layer 218 of the anode device 212, thereby causing different locations of the phosphor layer 218 to illuminate, causing the field emission display 200 to display different pictures as desired.

本發明提供的場發射陰極裝置及場發射顯示器中採用的隔離體的 寬度小於相鄰兩場發射元件的中心線之間的距離的十分之一,因此,隔離體的寬度遠小於相鄰兩場發射元件的中心線之間的距離,進一步地,位於隔離體之上的固定層的寬度遠小於相鄰兩場發射元件的中心線之間的距離。因此當柵網上施加電壓時,可有效降低由場發射元件發射出的電子打到固定層上的機率。從而減輕固定層的荷電效應,進而使場發射元件發射出的電子均沿著垂直於場發射元件表面的方向飛行,而不偏轉向固定層,在應用時可有效消除像素點邊界發散呈現不規則圖形的現象。 The field emission cathode device and the spacer used in the field emission display provided by the invention The width is less than one tenth of the distance between the center lines of the adjacent two field emission elements, and therefore, the width of the spacer is much smaller than the distance between the center lines of the adjacent two field emission elements, and further, is located in the spacer The width of the upper fixed layer is much smaller than the distance between the center lines of the adjacent two field emission elements. Therefore, when a voltage is applied to the grid, the probability of electrons emitted by the field emission element hitting the fixed layer can be effectively reduced. Thereby reducing the charging effect of the fixed layer, and then the electrons emitted by the field emission element fly in a direction perpendicular to the surface of the field emission element without deflecting to the fixed layer, which can effectively eliminate the pixel point boundary divergence and exhibit irregular patterns when applied. The phenomenon.

進一步地,場發射元件的徑向尺寸與相鄰兩場發射元件的中心線之間的距離的比值的範圍為0.125至0.48,因此,隔離體與場發射元件之間的距離較大。進一步地,固定層與場發射元件之間的距離也較大,因此可有效降低由場發射元件發射出的電子打到固定層上的機率。從而減輕固定層的荷電效應。 Further, the ratio of the radial dimension of the field emission element to the distance between the center lines of the adjacent two field emission elements ranges from 0.125 to 0.48, and therefore, the distance between the spacer and the field emission element is large. Further, the distance between the fixed layer and the field emission element is also large, so that the probability of electrons emitted from the field emission element hitting the fixed layer can be effectively reduced. Thereby reducing the charging effect of the fixed layer.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10‧‧‧場發射陰極裝置 10‧‧‧ Field emission cathode device

12‧‧‧絕緣基底 12‧‧‧Insulation base

14‧‧‧陰極電極 14‧‧‧Cathode electrode

16‧‧‧場發射元件 16‧‧‧ Field emission components

18‧‧‧隔離體 18‧‧‧Isolation

20‧‧‧柵網 20‧‧‧ grid

22‧‧‧固定層 22‧‧‧Fixed layer

24‧‧‧導電層 24‧‧‧ Conductive layer

121‧‧‧絕緣基底的第一表面 121‧‧‧The first surface of the insulating substrate

122‧‧‧絕緣基底的第二表面 122‧‧‧Second surface of the insulating substrate

Claims (14)

一種場發射陰極裝置,包括:一絕緣基底;複數條形陰極相互平行且等間隔設置於該絕緣基底的表面;複數隔離體間隔設置於所述絕緣基底的表面;複數條形柵網相互平行且等間隔設置,該複數條形柵網與該複數條形陰極異面垂直且交叉設置,每一所述條形柵網均通過所述隔離體支撐,與所述條形陰極間隔設置;複數場發射元件分別設置於所述複數條形陰極與所述複數條形柵網的交叉位置並與所述條形陰極電連接;複數固定層分別對應於所述複數隔離體設置於所述條形柵網表面,將所述條形柵網夾持於所述固定層與所述隔離體之間,其中,所述複數隔離體分別位於所述複數條形陰極之間並與所述條形陰極間隔設置,所述場發射陰極裝置滿足以下條件:D1小於等於D2/10,其中,所述隔離體的寬度定義為D1,相鄰二場發射元件的中心線之間的距離定義為D2。 A field emission cathode device comprising: an insulating substrate; a plurality of strip cathodes are parallel to each other and equally spaced on a surface of the insulating substrate; a plurality of spacers are spaced apart from a surface of the insulating substrate; the plurality of strip grids are parallel to each other Arranged at equal intervals, the plurality of strip grids are perpendicular to and intersect with the plurality of strip cathodes, and each of the strip grids is supported by the separator and spaced apart from the strip cathode; Transmitting elements respectively disposed at intersections of the plurality of strip cathodes and the plurality of strip grids and electrically connected to the strip cathodes; a plurality of fixed layers respectively corresponding to the plurality of spacers disposed on the strip grid a mesh surface sandwiching the strip grid between the fixed layer and the separator, wherein the plurality of separators are respectively located between the plurality of strip cathodes and spaced apart from the strip cathode It is provided that the field emission cathode device satisfies the condition that D1 is less than or equal to D2/10, wherein the width of the spacer is defined as D1, and the distance between the center lines of adjacent two field emission elements is defined as D 2. 如請求項1所述之場發射陰極裝置,其中,D2小於等於5毫米。 The field emission cathode device of claim 1, wherein D2 is less than or equal to 5 mm. 如請求項1所述之場發射陰極裝置,其中,D1小於等於500微米且大於等於100微米。 The field emission cathode device according to claim 1, wherein D1 is 500 μm or less and 100 μm or more. 如請求項1所述之場發射陰極裝置,其中,所述場發射陰極裝置進一步滿足以下條件:D3/D2大於等於0.125且D3/D2小於等於0.48,其中,所述場發射元件的徑向尺寸定義為D3。 The field emission cathode device of claim 1, wherein the field emission cathode device further satisfies the following condition: D3/D2 is greater than or equal to 0.125 and D3/D2 is less than or equal to 0.48, wherein a radial dimension of the field emission element Defined as D3. 如請求項4所述之場發射陰極裝置,其中,所述隔離體與所述場發射元件之間的距離大於等於150微米。 The field emission cathode device according to claim 4, wherein a distance between the separator and the field emission element is 150 μm or more. 如請求項1所述之場發射陰極裝置,其中,所述場發射陰極裝置進一步滿足以下條件:H大於等於5μm且H小於等於100μm;其中,所述隔離體的高度定義為H。 The field emission cathode device according to claim 1, wherein the field emission cathode device further satisfies the following condition: H is greater than or equal to 5 μm and H is less than or equal to 100 μm; wherein the height of the separator is defined as H. 如請求項1所述之場發射陰極裝置,其中,所述複數隔離體中的每一隔離體距與之相鄰的兩場發射元件之間的距離相等。 The field emission cathode device of claim 1, wherein each of the plurality of spacers is equidistant from a distance between two adjacent field emission elements. 如請求項1所述之場發射陰極裝置,其中,沿平行於所述條形陰極的方向,相鄰的二條形陰極之間僅設置一所述隔離體,該隔離體支撐所述複數條形柵網。 The field emission cathode device according to claim 1, wherein, in a direction parallel to the strip cathode, only one of the spacers is disposed between adjacent two cathodes, and the spacer supports the plurality of strips Grid. 如請求項1所述之場發射陰極裝置,其中,沿平行於所述條形陰極的方向,相鄰的二條形陰極之間設置所述複數隔離體,每一所述隔離體支撐一所述條形柵網。 The field emission cathode device of claim 1, wherein the plurality of spacers are disposed between adjacent two cathodes in a direction parallel to the strip cathode, each of the spacers supporting Strip grid. 如請求項1所述之場發射陰極裝置,其中,沿平行於所述條形柵網的方向,每間隔複數所述條形陰極設置一所述隔離體。 A field emission cathode device according to claim 1, wherein a spacer is provided for each of said strip cathodes in a direction parallel to said strip grid. 如請求項1所述之場發射陰極裝置,其中,所述固定層填充所述條形柵網的位於所述隔離體上方的柵孔,與所述隔離體結合在一起,將所述條形柵網固定於所述隔離體與所述固定層之間。 The field emission cathode device of claim 1, wherein the pinned layer fills a gate hole of the strip grid above the separator, and is combined with the separator to form the strip A grid is fixed between the separator and the fixed layer. 如請求項11所述之場發射陰極裝置,其中,所述固定層對應所述柵網的非柵孔區域的厚度小於等於10微米。 The field emission cathode device of claim 11, wherein the fixed layer corresponds to a thickness of the non-gate hole region of the grid of 10 μm or less. 如請求項1所述之場發射陰極裝置,其中,進一步包括複數導電層分別設置於所述複數固定層遠離所述條形柵網的表面。 The field emission cathode device of claim 1, further comprising a plurality of conductive layers respectively disposed on a surface of the plurality of fixed layers away from the strip grid. 一種場發射顯示器,其中,其包括一陽極裝置及一如請求項1至13中任一項所述之場發射陰極裝置,該場發射陰極裝置與該陽極 裝置間隔設置。 A field emission display, comprising an anode device and a field emission cathode device according to any one of claims 1 to 13, the field emission cathode device and the anode Device interval setting.
TW99146924A 2010-12-30 2010-12-30 Field emission cathode device and field emission display TWI415157B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW99146924A TWI415157B (en) 2010-12-30 2010-12-30 Field emission cathode device and field emission display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW99146924A TWI415157B (en) 2010-12-30 2010-12-30 Field emission cathode device and field emission display

Publications (2)

Publication Number Publication Date
TW201227790A TW201227790A (en) 2012-07-01
TWI415157B true TWI415157B (en) 2013-11-11

Family

ID=46933403

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99146924A TWI415157B (en) 2010-12-30 2010-12-30 Field emission cathode device and field emission display

Country Status (1)

Country Link
TW (1) TWI415157B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102298A1 (en) * 1999-11-05 2001-05-23 Iljin Nanotech Co., Ltd. Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof
US6794814B2 (en) * 2001-02-16 2004-09-21 Samsung Sdi Co., Ltd. Field emission display device having carbon nanotube emitter
TW200616000A (en) * 2004-11-12 2006-05-16 Hon Hai Prec Ind Co Ltd Field emission cathode and field emission device using same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102298A1 (en) * 1999-11-05 2001-05-23 Iljin Nanotech Co., Ltd. Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof
US6794814B2 (en) * 2001-02-16 2004-09-21 Samsung Sdi Co., Ltd. Field emission display device having carbon nanotube emitter
TW200616000A (en) * 2004-11-12 2006-05-16 Hon Hai Prec Ind Co Ltd Field emission cathode and field emission device using same

Also Published As

Publication number Publication date
TW201227790A (en) 2012-07-01

Similar Documents

Publication Publication Date Title
US4341980A (en) Flat display device
JP4704850B2 (en) Field emission device and field emission display using the same
JP2003263951A (en) Field emission type electron source and driving method
JP2006236971A (en) Field emission display device
JP5595854B2 (en) Field emission cathode device and field emission display device
JP4394632B2 (en) Field emission cathode device and field emission display device
TWI471890B (en) Field emission cathode device and driving method of the field emission cathode device
US8013510B2 (en) Electron emission device and display device using the same
US7923914B2 (en) Field emission cathode device and field emission display using the same
WO2006102796A1 (en) A field emission display having multi-layer structure
TWI415157B (en) Field emission cathode device and field emission display
JP5504246B2 (en) Field emission cathode device and field emission display device using the same
JP2002334670A (en) Display device
CN102074441B (en) Field-emission cathode device and field-emission display
CN100405523C (en) Field emission display
TWI390575B (en) Field emission cathode structure and display device for using the same
TWI376717B (en) Field emission cathode device and field emission display
TWI416571B (en) Field emission cathode device and field emission display
KR100252068B1 (en) Field emission device and image display device using the same
JP2005310647A (en) Field emission type display and its manufacturing method
KR100434523B1 (en) Field effect electron emission device employing high density and precision spacer divided into two sections
JP2005190789A (en) Image display device
KR20050114000A (en) Electron emission device
JPH0322328A (en) Flat type image display device
KR20070077956A (en) Flat panel display for thermo control