TW200518339A - Bipolar junction transistor with improved extrinsic base region and method of fabrication - Google Patents
Bipolar junction transistor with improved extrinsic base region and method of fabricationInfo
- Publication number
- TW200518339A TW200518339A TW093125203A TW93125203A TW200518339A TW 200518339 A TW200518339 A TW 200518339A TW 093125203 A TW093125203 A TW 093125203A TW 93125203 A TW93125203 A TW 93125203A TW 200518339 A TW200518339 A TW 200518339A
- Authority
- TW
- Taiwan
- Prior art keywords
- bipolar junction
- junction transistor
- fabrication
- base region
- extrinsic base
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/715,971 US7005359B2 (en) | 2003-11-17 | 2003-11-17 | Bipolar junction transistor with improved extrinsic base region and method of fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200518339A true TW200518339A (en) | 2005-06-01 |
TWI289928B TWI289928B (en) | 2007-11-11 |
Family
ID=34574324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093125203A TWI289928B (en) | 2003-11-17 | 2004-08-20 | Bipolar junction transistor with improved extrinsic base region and method of fabrication |
Country Status (7)
Country | Link |
---|---|
US (2) | US7005359B2 (zh) |
JP (1) | JP4949033B2 (zh) |
KR (1) | KR100850047B1 (zh) |
CN (1) | CN1879221A (zh) |
DE (1) | DE112004002137B4 (zh) |
TW (1) | TWI289928B (zh) |
WO (1) | WO2005050742A1 (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7102205B2 (en) * | 2004-09-01 | 2006-09-05 | International Business Machines Corporation | Bipolar transistor with extrinsic stress layer |
US7262484B2 (en) * | 2005-05-09 | 2007-08-28 | International Business Machines Corporation | Structure and method for performance improvement in vertical bipolar transistors |
US20070069295A1 (en) * | 2005-09-28 | 2007-03-29 | Kerr Daniel C | Process to integrate fabrication of bipolar devices into a CMOS process flow |
US7446009B2 (en) * | 2005-11-11 | 2008-11-04 | Sanyo Electric Co., Ltd. | Manufacturing method for semiconductor device |
JP2007250903A (ja) * | 2006-03-16 | 2007-09-27 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
US7772060B2 (en) * | 2006-06-21 | 2010-08-10 | Texas Instruments Deutschland Gmbh | Integrated SiGe NMOS and PMOS transistors |
US7521772B2 (en) * | 2006-11-08 | 2009-04-21 | International Business Machines Corporation | Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methods |
US7910447B1 (en) * | 2007-05-15 | 2011-03-22 | National Semiconductor Corporation | System and method for providing a self aligned bipolar transistor using a simplified sacrificial nitride emitter |
CN102456551A (zh) * | 2010-10-21 | 2012-05-16 | 上海华虹Nec电子有限公司 | 外延生长方法 |
US8536012B2 (en) | 2011-07-06 | 2013-09-17 | International Business Machines Corporation | Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases |
CN103137675B (zh) * | 2011-11-23 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 具有高击穿电压的锗硅异质结双极晶体管结构及其制作方法 |
US8525233B1 (en) * | 2012-03-23 | 2013-09-03 | Texas Instruments Incorporated | SiGe heterojunction bipolar transistor with a shallow out-diffused P+ emitter region |
CN102651390B (zh) * | 2012-05-16 | 2015-09-30 | 清华大学 | 嵌入式外延外基区双极晶体管及其制备方法 |
US20130307122A1 (en) * | 2012-05-16 | 2013-11-21 | Tsinghua University | Bipolar transistor with embedded epitaxial external base region and method of forming the same |
CN102683399B (zh) * | 2012-05-16 | 2015-11-04 | 清华大学 | 嵌入式外延外基区双极晶体管及其制备方法 |
CN102709318B (zh) * | 2012-05-16 | 2015-07-15 | 清华大学 | 嵌入式外延外基区双极晶体管及其制备方法 |
US9093491B2 (en) | 2012-12-05 | 2015-07-28 | International Business Machines Corporation | Bipolar junction transistors with reduced base-collector junction capacitance |
CN103035685A (zh) * | 2012-12-12 | 2013-04-10 | 清华大学 | 包含埋氧层的选择外延外基区双极晶体管及其制备方法 |
US8956945B2 (en) | 2013-02-04 | 2015-02-17 | International Business Machines Corporation | Trench isolation for bipolar junction transistors in BiCMOS technology |
US8796149B1 (en) | 2013-02-18 | 2014-08-05 | International Business Machines Corporation | Collector-up bipolar junction transistors in BiCMOS technology |
US8927381B2 (en) * | 2013-03-20 | 2015-01-06 | International Business Machines Corporation | Self-aligned bipolar junction transistors |
US9312369B2 (en) * | 2014-06-04 | 2016-04-12 | Infineon Technologies Dresden Gmbh | Bipolar transistor structure and a method of manufacturing a bipolar transistor structure |
CN104124155A (zh) * | 2014-07-02 | 2014-10-29 | 中国电子科技集团公司第五十五研究所 | 一种磷化铟异质结晶体管侧墙保护发射极制作方法 |
US9825157B1 (en) * | 2016-06-29 | 2017-11-21 | Globalfoundries Inc. | Heterojunction bipolar transistor with stress component |
CN108054095B (zh) * | 2017-12-21 | 2020-08-28 | 南京溧水高新创业投资管理有限公司 | 双极晶体管的制作方法 |
US11588043B2 (en) | 2021-04-14 | 2023-02-21 | Globalfoundries U.S. Inc. | Bipolar transistor with elevated extrinsic base and methods to form same |
US11855196B2 (en) | 2021-10-25 | 2023-12-26 | Globalfoundries Singapore Pte. Ltd. | Transistor with wrap-around extrinsic base |
US11855195B2 (en) | 2021-10-25 | 2023-12-26 | Globalfoundries Singapore Pte. Ltd. | Transistor with wrap-around extrinsic base |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3521009A1 (de) * | 1985-06-12 | 1986-12-18 | Chiron-Werke Gmbh, 7200 Tuttlingen | Werkzeugmaschine |
DE3831869A1 (de) * | 1988-09-20 | 1990-03-29 | Chiron Werke Gmbh | Werkzeugmaschine |
JPH03225870A (ja) * | 1990-01-31 | 1991-10-04 | Toshiba Corp | ヘテロ接合バイポーラトランジスタの製造方法 |
DE4102888A1 (de) * | 1990-01-31 | 1991-08-01 | Toshiba Kawasaki Kk | Verfahren zur herstellung eines miniaturisierten heterouebergang-bipolartransistors |
DE4304361A1 (de) * | 1993-02-13 | 1994-08-18 | Chiron Werke Gmbh | Verfahren zum Werkzeugwechsel und Werkzeugmaschine zur Durchführung des Verfahrens |
JPH07130754A (ja) * | 1993-11-02 | 1995-05-19 | Fujitsu Ltd | へテロ接合バイポーラトランジスタ及びその製造方法 |
JPH07211729A (ja) * | 1994-01-26 | 1995-08-11 | Fujitsu Ltd | ヘテロ接合バイポーラトランジスタ及びその製造方法 |
JP3399673B2 (ja) * | 1994-12-14 | 2003-04-21 | 三菱電機株式会社 | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
JP3628873B2 (ja) * | 1998-04-28 | 2005-03-16 | 富士通株式会社 | 半導体装置及びその製造方法 |
DE10104776A1 (de) * | 2001-02-02 | 2002-08-22 | Infineon Technologies Ag | Bipolartransistor und Verfahren zu dessen Herstellung |
US6617220B2 (en) * | 2001-03-16 | 2003-09-09 | International Business Machines Corporation | Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base |
US6534371B2 (en) * | 2001-06-11 | 2003-03-18 | International Business Machines Corporation | C implants for improved SiGe bipolar yield |
US6649482B1 (en) * | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
US6492238B1 (en) * | 2001-06-22 | 2002-12-10 | International Business Machines Corporation | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit |
US6767798B2 (en) * | 2002-04-09 | 2004-07-27 | Maxim Integrated Products, Inc. | Method of forming self-aligned NPN transistor with raised extrinsic base |
US6541336B1 (en) * | 2002-05-15 | 2003-04-01 | International Business Machines Corporation | Method of fabricating a bipolar transistor having a realigned emitter |
US6936519B2 (en) | 2002-08-19 | 2005-08-30 | Chartered Semiconductor Manufacturing, Ltd. | Double polysilicon bipolar transistor and method of manufacture therefor |
KR100546332B1 (ko) * | 2003-06-13 | 2006-01-26 | 삼성전자주식회사 | 바이폴라 접합 트랜지스터 및 그 제조 방법 |
TWI241025B (en) | 2003-06-13 | 2005-10-01 | Samsung Electronics Co Ltd | Bipolar junction transistors and methods of manufacturing the same |
-
2003
- 2003-11-17 US US10/715,971 patent/US7005359B2/en not_active Expired - Fee Related
-
2004
- 2004-08-20 TW TW093125203A patent/TWI289928B/zh not_active IP Right Cessation
- 2004-11-10 WO PCT/US2004/037487 patent/WO2005050742A1/en active Application Filing
- 2004-11-10 CN CNA200480033204XA patent/CN1879221A/zh active Pending
- 2004-11-10 JP JP2006539799A patent/JP4949033B2/ja not_active Expired - Fee Related
- 2004-11-10 KR KR1020067009394A patent/KR100850047B1/ko not_active IP Right Cessation
- 2004-11-10 DE DE112004002137T patent/DE112004002137B4/de not_active Expired - Fee Related
-
2005
- 2005-11-07 US US11/269,477 patent/US20060113634A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP4949033B2 (ja) | 2012-06-06 |
DE112004002137B4 (de) | 2010-07-08 |
US20050104160A1 (en) | 2005-05-19 |
US7005359B2 (en) | 2006-02-28 |
KR100850047B1 (ko) | 2008-08-04 |
TWI289928B (en) | 2007-11-11 |
DE112004002137T5 (de) | 2008-03-20 |
KR20060086425A (ko) | 2006-07-31 |
CN1879221A (zh) | 2006-12-13 |
WO2005050742A1 (en) | 2005-06-02 |
US20060113634A1 (en) | 2006-06-01 |
JP2007512687A (ja) | 2007-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |