TW200518319A - Semiconductor memory device and method of fabricating the same - Google Patents
Semiconductor memory device and method of fabricating the sameInfo
- Publication number
- TW200518319A TW200518319A TW093129201A TW93129201A TW200518319A TW 200518319 A TW200518319 A TW 200518319A TW 093129201 A TW093129201 A TW 093129201A TW 93129201 A TW93129201 A TW 93129201A TW 200518319 A TW200518319 A TW 200518319A
- Authority
- TW
- Taiwan
- Prior art keywords
- trench
- memory device
- semiconductor memory
- fabricating
- same
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003352514A JP4334315B2 (ja) | 2003-10-10 | 2003-10-10 | 半導体記憶装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200518319A true TW200518319A (en) | 2005-06-01 |
| TWI240407B TWI240407B (en) | 2005-09-21 |
Family
ID=34419855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093129201A TWI240407B (en) | 2003-10-10 | 2004-09-27 | Semiconductor memory device and method of fabricating the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7138679B2 (zh) |
| JP (1) | JP4334315B2 (zh) |
| KR (1) | KR100702102B1 (zh) |
| TW (1) | TWI240407B (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070057318A1 (en) * | 2005-09-15 | 2007-03-15 | Lars Bach | Semiconductor memory device and method of production |
| JP2008305942A (ja) * | 2007-06-07 | 2008-12-18 | Tokyo Electron Ltd | 半導体メモリ装置およびその製造方法 |
| JP5405737B2 (ja) * | 2007-12-20 | 2014-02-05 | スパンション エルエルシー | 半導体装置およびその製造方法 |
| CN113471285B (zh) * | 2020-03-30 | 2022-08-02 | 长鑫存储技术有限公司 | 半导体结构及其制备方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5386132A (en) * | 1992-11-02 | 1995-01-31 | Wong; Chun C. D. | Multimedia storage system with highly compact memory device |
| US5460988A (en) * | 1994-04-25 | 1995-10-24 | United Microelectronics Corporation | Process for high density flash EPROM cell |
| US5554550A (en) * | 1994-09-14 | 1996-09-10 | United Microelectronics Corporation | Method of fabricating electrically eraseable read only memory cell having a trench |
| US6093606A (en) | 1998-03-05 | 2000-07-25 | Taiwan Semiconductor Manufacturing Company | Method of manufacture of vertical stacked gate flash memory device |
| JP3930256B2 (ja) | 2001-02-07 | 2007-06-13 | スパンション エルエルシー | 半導体装置及びその製造方法 |
| DE10129958B4 (de) * | 2001-06-21 | 2006-07-13 | Infineon Technologies Ag | Speicherzellenanordnung und Herstellungsverfahren |
| US6486028B1 (en) * | 2001-11-20 | 2002-11-26 | Macronix International Co., Ltd. | Method of fabricating a nitride read-only-memory cell vertical structure |
| DE10204868B4 (de) * | 2002-02-06 | 2007-08-23 | Infineon Technologies Ag | Speicherzelle mit Grabenspeichertransistor und Oxid-Nitrid-Oxid-Dielektrikum |
| KR100487523B1 (ko) * | 2002-04-15 | 2005-05-03 | 삼성전자주식회사 | 부유트랩형 비휘발성 메모리 소자 및 그 제조방법 |
| US20040041214A1 (en) * | 2002-08-29 | 2004-03-04 | Prall Kirk D. | One F2 memory cell, memory array, related devices and methods |
| US20030235076A1 (en) * | 2002-06-21 | 2003-12-25 | Micron Technology, Inc. | Multistate NROM having a storage density much greater than 1 Bit per 1F2 |
| CN100407427C (zh) * | 2002-06-21 | 2008-07-30 | 微米技术股份有限公司 | Nrom存储器元件,存储器阵列,相关装置和方法 |
| JP4412903B2 (ja) | 2002-06-24 | 2010-02-10 | 株式会社ルネサステクノロジ | 半導体装置 |
| DE10229065A1 (de) * | 2002-06-28 | 2004-01-29 | Infineon Technologies Ag | Verfahren zur Herstellung eines NROM-Speicherzellenfeldes |
| TW583755B (en) * | 2002-11-18 | 2004-04-11 | Nanya Technology Corp | Method for fabricating a vertical nitride read-only memory (NROM) cell |
| US7241654B2 (en) * | 2003-12-17 | 2007-07-10 | Micron Technology, Inc. | Vertical NROM NAND flash memory array |
| KR100513751B1 (ko) * | 2004-08-25 | 2005-09-13 | 현대엔지니어링 주식회사 | 친환경적인 하천법면 보호공 설치구조 |
-
2003
- 2003-10-10 JP JP2003352514A patent/JP4334315B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-27 TW TW093129201A patent/TWI240407B/zh not_active IP Right Cessation
- 2004-10-05 US US10/957,961 patent/US7138679B2/en active Active
- 2004-10-06 KR KR1020040079383A patent/KR100702102B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI240407B (en) | 2005-09-21 |
| JP4334315B2 (ja) | 2009-09-30 |
| KR20050035080A (ko) | 2005-04-15 |
| KR100702102B1 (ko) | 2007-04-02 |
| JP2005116964A (ja) | 2005-04-28 |
| US7138679B2 (en) | 2006-11-21 |
| US20050077565A1 (en) | 2005-04-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |