TW200514240A - Self-aigned MIM capacitor process for embedded DRAM - Google Patents

Self-aigned MIM capacitor process for embedded DRAM

Info

Publication number
TW200514240A
TW200514240A TW093103382A TW93103382A TW200514240A TW 200514240 A TW200514240 A TW 200514240A TW 093103382 A TW093103382 A TW 093103382A TW 93103382 A TW93103382 A TW 93103382A TW 200514240 A TW200514240 A TW 200514240A
Authority
TW
Taiwan
Prior art keywords
conductive material
trench
capacitors
layer
group
Prior art date
Application number
TW093103382A
Other languages
English (en)
Other versions
TWI231599B (en
Inventor
Kuo-Chi Tu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200514240A publication Critical patent/TW200514240A/zh
Application granted granted Critical
Publication of TWI231599B publication Critical patent/TWI231599B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/312—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with a bit line higher than the capacitor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093103382A 2003-10-03 2004-02-12 Self-aligned MIM capacitor process for embedded dram and semiconductor device manufactured thereby TWI231599B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/679,098 US6853024B1 (en) 2003-10-03 2003-10-03 Self-aligned MIM capacitor process for embedded DRAM

Publications (2)

Publication Number Publication Date
TW200514240A true TW200514240A (en) 2005-04-16
TWI231599B TWI231599B (en) 2005-04-21

Family

ID=34104795

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093103382A TWI231599B (en) 2003-10-03 2004-02-12 Self-aligned MIM capacitor process for embedded dram and semiconductor device manufactured thereby

Country Status (2)

Country Link
US (2) US6853024B1 (zh)
TW (1) TWI231599B (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6720232B1 (en) * 2003-04-10 2004-04-13 Taiwan Semiconductor Manufacturing Company Method of fabricating an embedded DRAM for metal-insulator-metal (MIM) capacitor structure
KR100640639B1 (ko) * 2005-04-19 2006-10-31 삼성전자주식회사 미세콘택을 포함하는 반도체소자 및 그 제조방법
US7880268B2 (en) 2006-05-12 2011-02-01 Stmicroelectronics S.A. MIM capacitor
US8148223B2 (en) 2006-05-22 2012-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. 1T MIM memory for embedded ram application in soc
JP2008053300A (ja) * 2006-08-22 2008-03-06 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
TWI358818B (en) 2008-03-27 2012-02-21 Inotera Memories Inc Memory device and fabrication thereof
US7659602B2 (en) * 2008-06-02 2010-02-09 Qimonda Ag Semiconductor component with MIM capacitor
US8288240B2 (en) * 2009-02-13 2012-10-16 International Business Machines Corporation Method of making an MIM capacitor and MIM capacitor structure formed thereby
TWI416598B (zh) * 2010-07-01 2013-11-21 Atomic Energy Council 利用磊晶矽薄膜降低提純冶金級矽晶片內金屬雜質之製備方法
KR101675388B1 (ko) * 2010-08-25 2016-11-11 삼성전자 주식회사 반도체 장치의 제조 방법
US8609457B2 (en) 2011-05-03 2013-12-17 Globalfoundries Inc. Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making same
JP5863381B2 (ja) * 2011-10-17 2016-02-16 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US10256233B2 (en) 2017-05-26 2019-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Device including resistor-capacitor (RC) structure and method of making the same
JP7215878B2 (ja) * 2018-10-31 2023-01-31 ラピスセミコンダクタ株式会社 半導体ウェハの製造方法および半導体装置
JP7179634B2 (ja) * 2019-02-07 2022-11-29 株式会社東芝 コンデンサ及びコンデンサモジュール

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3749776B2 (ja) * 1997-02-28 2006-03-01 株式会社東芝 半導体装置
JP2000058786A (ja) * 1998-08-11 2000-02-25 Mitsubishi Electric Corp 半導体装置と半導体装置の製造方法およびそれに用いるレジストパターン形成方法
US6159818A (en) * 1999-09-02 2000-12-12 Micron Technology, Inc. Method of forming a container capacitor structure
US6211061B1 (en) 1999-10-29 2001-04-03 Taiwan Semiconductor Manufactuirng Company Dual damascene process for carbon-based low-K materials
US6271084B1 (en) 2001-01-16 2001-08-07 Taiwan Semiconductor Manufacturing Company Method of fabricating a metal-insulator-metal (MIM), capacitor structure using a damascene process
KR20020078086A (ko) * 2001-04-04 2002-10-18 삼성전자 주식회사 반도체 메모리 소자 및 이를 한정하기 위한 마스크 패턴
JP2003224204A (ja) * 2002-01-29 2003-08-08 Mitsubishi Electric Corp キャパシタを有する半導体装置
US6720232B1 (en) * 2003-04-10 2004-04-13 Taiwan Semiconductor Manufacturing Company Method of fabricating an embedded DRAM for metal-insulator-metal (MIM) capacitor structure
US7282757B2 (en) * 2003-10-20 2007-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. MIM capacitor structure and method of manufacture

Also Published As

Publication number Publication date
US20050124132A1 (en) 2005-06-09
US7381613B2 (en) 2008-06-03
US6853024B1 (en) 2005-02-08
TWI231599B (en) 2005-04-21

Similar Documents

Publication Publication Date Title
TW200505033A (en) Capacitor and method of fabricating the same
TW200514240A (en) Self-aigned MIM capacitor process for embedded DRAM
TW200625548A (en) DRAM device having capacitor and method thereof
SG144716A1 (en) Mim capacitor structure and method of manufacture
TW200744160A (en) Semiconductor device, embedded memory, and method of fabricating the same
JP2003110095A5 (zh)
TW200707706A (en) MIM capacitor in a semiconductor device and method therefor
JP2005526378A5 (zh)
WO2005034201A3 (en) Metal-insulator-metal capacitor and method of fabrication
TW200620550A (en) Semiconductor device and method for manufacturing the same
TW359896B (en) Dual deposition methods for forming contact metallizations, capacitors, and memory devices
TW200627590A (en) A semiconductor device and method of fabricating the same, and a memory device
EP1347500A3 (en) Semiconductor device and method of manufacturing the same
TW200802800A (en) Method for fabricating a semiconductor component including a high capacitance per unit area capacitor
TW359868B (en) DRAM capacitors and production process therefor
TW200644166A (en) Semiconductor device and a method of manufacturing the same
WO2003046974A3 (de) Kondensator und verfahren zum herstellen eines kondensators
JP2004014770A (ja) 半導体装置
TW200715532A (en) Microelectronic device and method of manufacturing a microelectronic device
JP2001156269A5 (zh)
WO2004077438A3 (en) Process of forming a ferroelectric memory integrated circuit
TW329546B (en) The semiconductor device and its manufacturing method
JP2001053249A (ja) 半導体装置およびその製造方法
EP1168457A3 (en) Ferroelectric memory cell and method of manufacture
JP2003204043A5 (zh)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees