TW200512543A - Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device - Google Patents

Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device

Info

Publication number
TW200512543A
TW200512543A TW093122276A TW93122276A TW200512543A TW 200512543 A TW200512543 A TW 200512543A TW 093122276 A TW093122276 A TW 093122276A TW 93122276 A TW93122276 A TW 93122276A TW 200512543 A TW200512543 A TW 200512543A
Authority
TW
Taiwan
Prior art keywords
display device
semiconductor device
producing
positive
organic group
Prior art date
Application number
TW093122276A
Other languages
English (en)
Inventor
Toshio Banba
Takashi Hirano
Original Assignee
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of TW200512543A publication Critical patent/TW200512543A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/42—Polyamides containing atoms other than carbon, hydrogen, oxygen, and nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
    • C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Polyamides (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093122276A 2003-08-06 2004-07-26 Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device TW200512543A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003288221 2003-08-06

Publications (1)

Publication Number Publication Date
TW200512543A true TW200512543A (en) 2005-04-01

Family

ID=34114037

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093122276A TW200512543A (en) 2003-08-06 2004-07-26 Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device

Country Status (6)

Country Link
US (1) US7368205B2 (zh)
EP (1) EP1513014A3 (zh)
KR (1) KR20050016162A (zh)
CN (2) CN1609133A (zh)
SG (1) SG109012A1 (zh)
TW (1) TW200512543A (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NZ562203A (en) 2005-04-07 2010-09-30 Xy Llc Flow path conditioner system utilising an antimicrobial aqueous solvent composition
CN101765810A (zh) * 2007-07-26 2010-06-30 住友电木株式会社 喷涂用正型感光性树脂组合物、使用该喷涂用正型感光性树脂组合物的固化膜的形成方法、固化膜以及半导体装置
US20100249166A1 (en) * 2007-09-19 2010-09-30 Xy, Inc. Differential evaporation potentiated disinfectant system
US8119688B2 (en) * 2007-09-19 2012-02-21 Xy, Llc Differential evaporation potentiated disinfectant system
TW200927832A (en) * 2007-10-16 2009-07-01 Fujifilm Electronic Materials Novel photosensitive resin compositions
CN102016718B (zh) * 2008-05-07 2013-10-16 住友电木株式会社 正型感光性树脂组合物、固化膜、保护膜和绝缘膜以及使用它们的半导体装置和显示装置
JP5410918B2 (ja) * 2008-10-20 2014-02-05 チェイル インダストリーズ インコーポレイテッド ポジティブ型感光性樹脂組成物
KR101413078B1 (ko) 2011-12-30 2014-07-02 제일모직 주식회사 포지티브형 감광성 수지 조성물
CN104619776B (zh) * 2012-09-14 2017-05-17 东丽株式会社 聚酰胺树脂组合物、成型品
US20140234532A1 (en) * 2013-02-15 2014-08-21 Sumitomo Bakelite Co., Ltd. Laminated composite material for producing display element, optical element, or illumination element
KR102176074B1 (ko) * 2013-04-15 2020-11-09 아크론 폴리머 시스템즈, 인코포레이티드 디스플레이용 소자, 광학용 소자, 또는 조명용 소자의 제조를 위한 방향족 폴리아미드 용액
WO2018022680A1 (en) * 2016-07-28 2018-02-01 3M Innovative Properties Company Segmented silicone polyamide block copolymers and articles containing the same

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DE3850809D1 (de) * 1987-05-18 1994-09-01 Siemens Ag Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen.
JPS6446862A (en) 1987-08-18 1989-02-21 Fujitsu Ltd Bus controller
DE68921052T2 (de) * 1988-12-16 1995-06-01 Hitachi Chemical Co Ltd Lichtempfindliche Kunststoffzusammensetzung und lichtempfindliches Element unter Verwendung dieser Zusammensetzung.
EP0431971B1 (en) * 1989-12-07 1995-07-19 Kabushiki Kaisha Toshiba Photosensitive composition and resin-encapsulated semiconductor device
DE4028515C2 (de) * 1990-09-07 2000-11-30 Siemens Ag Resists auf der Basis von oligomeren und/oder polymeren Polybenzoxazol-Vorstufen
EP0478321B1 (en) * 1990-09-28 1997-11-12 Kabushiki Kaisha Toshiba Photosenstive resin composition for forming polyimide film pattern and method of forming polyimide film pattern
US5472823A (en) * 1992-01-20 1995-12-05 Hitachi Chemical Co., Ltd. Photosensitive resin composition
JP2674415B2 (ja) * 1992-01-27 1997-11-12 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
JP2787531B2 (ja) * 1993-02-17 1998-08-20 信越化学工業株式会社 感光性樹脂組成物及び電子部品用保護膜
JPH08254831A (ja) * 1995-03-15 1996-10-01 Shin Etsu Chem Co Ltd 感光性ポリイミド系樹脂組成物
JPH09118825A (ja) * 1995-10-24 1997-05-06 Shin Etsu Chem Co Ltd ポリイミド樹脂組成物
TW502135B (en) * 1996-05-13 2002-09-11 Sumitomo Bakelite Co Positive type photosensitive resin composition and process for preparing polybenzoxazole resin film by using the same
US6207356B1 (en) * 1996-12-31 2001-03-27 Sumitomo Bakelite Company Limited Method for the pattern-processing of photosensitive resin composition
WO1999054787A1 (fr) * 1998-04-15 1999-10-28 Asahi Kasei Kogyo Kabushiki Kaisha Composition de resine photosensible positive
US6177225B1 (en) * 1998-10-01 2001-01-23 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
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US6670090B1 (en) * 2002-09-03 2003-12-30 Industrial Technology Research Institute Positive working photosensitive composition, article and process for forming a relief pattern

Also Published As

Publication number Publication date
EP1513014A3 (en) 2005-11-23
SG109012A1 (en) 2005-02-28
CN101928396A (zh) 2010-12-29
EP1513014A2 (en) 2005-03-09
US7368205B2 (en) 2008-05-06
KR20050016162A (ko) 2005-02-21
US20050031994A1 (en) 2005-02-10
CN1609133A (zh) 2005-04-27

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