TW200511380A - Method of manufacturing an electronic device - Google Patents

Method of manufacturing an electronic device

Info

Publication number
TW200511380A
TW200511380A TW093113737A TW93113737A TW200511380A TW 200511380 A TW200511380 A TW 200511380A TW 093113737 A TW093113737 A TW 093113737A TW 93113737 A TW93113737 A TW 93113737A TW 200511380 A TW200511380 A TW 200511380A
Authority
TW
Taiwan
Prior art keywords
electronic device
manufacturing
dissociates
lithography
interconnect
Prior art date
Application number
TW093113737A
Other languages
English (en)
Inventor
Yukiko Furukawa
Robertus Adrianus Maria Wolters
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200511380A publication Critical patent/TW200511380A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW093113737A 2003-05-19 2004-05-14 Method of manufacturing an electronic device TW200511380A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03101395 2003-05-19

Publications (1)

Publication Number Publication Date
TW200511380A true TW200511380A (en) 2005-03-16

Family

ID=33442840

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093113737A TW200511380A (en) 2003-05-19 2004-05-14 Method of manufacturing an electronic device

Country Status (5)

Country Link
US (1) US7605089B2 (zh)
JP (1) JP2007502023A (zh)
CN (1) CN100555085C (zh)
TW (1) TW200511380A (zh)
WO (1) WO2004102279A2 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100726150B1 (ko) * 2005-12-29 2007-06-13 주식회사 하이닉스반도체 새들형 핀 트랜지스터 제조방법
DE102010003997A1 (de) 2010-01-04 2011-07-07 Benteler Automobiltechnik GmbH, 33102 Verwendung einer Stahllegierung
JP5708071B2 (ja) * 2011-03-11 2015-04-30 富士通株式会社 レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法
JP5785754B2 (ja) * 2011-03-30 2015-09-30 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
WO2013055586A1 (en) * 2011-10-13 2013-04-18 Applied Materials, Inc. Method for etching euv reflective multi-material layers utilized to form a photomask
TWI473206B (zh) * 2012-07-03 2015-02-11 Powerchip Technology Corp 接觸窗的形成方法
US8778574B2 (en) 2012-11-30 2014-07-15 Applied Materials, Inc. Method for etching EUV material layers utilized to form a photomask
CN113053805B (zh) * 2021-03-11 2022-06-10 长鑫存储技术有限公司 半导体结构的形成方法及半导体结构
CN113184800B (zh) * 2021-04-14 2023-11-14 北京北方华创微电子装备有限公司 微机电系统器件的制造方法及微机电系统器件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5417831A (en) * 1977-07-11 1979-02-09 Fuji Photo Film Co Ltd Light image recording material and dry type light image recording method using this
US5627345A (en) * 1991-10-24 1997-05-06 Kawasaki Steel Corporation Multilevel interconnect structure
US6103445A (en) * 1997-03-07 2000-08-15 Board Of Regents, The University Of Texas System Photoresist compositions comprising norbornene derivative polymers with acid labile groups
US6183940B1 (en) 1998-03-17 2001-02-06 Integrated Device Technology, Inc. Method of retaining the integrity of a photoresist pattern
US6103457A (en) * 1998-05-28 2000-08-15 Philips Electronics North America Corp. Method for reducing faceting on a photoresist layer during an etch process
JP2000091318A (ja) * 1998-09-09 2000-03-31 Fujitsu Ltd 半導体装置の製造方法
JP2000214575A (ja) * 1999-01-26 2000-08-04 Sharp Corp クロムマスクの形成方法
US6680157B1 (en) * 2000-10-12 2004-01-20 Massachusetts Institute Of Technology Resist methods and materials for UV and electron-beam lithography with reduced outgassing
US6720247B2 (en) * 2000-12-14 2004-04-13 Texas Instruments Incorporated Pre-pattern surface modification for low-k dielectrics using A H2 plasma
US6806021B2 (en) * 2001-04-02 2004-10-19 Kabushiki Kaisha Toshiba Method for forming a pattern and method of manufacturing semiconductor device
KR100780594B1 (ko) * 2001-11-19 2007-11-29 주식회사 하이닉스반도체 반도체장치의 건식 식각 방법

Also Published As

Publication number Publication date
US7605089B2 (en) 2009-10-20
CN1791840A (zh) 2006-06-21
WO2004102279A2 (en) 2004-11-25
JP2007502023A (ja) 2007-02-01
CN100555085C (zh) 2009-10-28
US20070032086A1 (en) 2007-02-08
WO2004102279A3 (en) 2005-01-20

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