TW200511375A - Linear device - Google Patents

Linear device

Info

Publication number
TW200511375A
TW200511375A TW093125078A TW93125078A TW200511375A TW 200511375 A TW200511375 A TW 200511375A TW 093125078 A TW093125078 A TW 093125078A TW 93125078 A TW93125078 A TW 93125078A TW 200511375 A TW200511375 A TW 200511375A
Authority
TW
Taiwan
Prior art keywords
channel length
region
source
misfet
determined
Prior art date
Application number
TW093125078A
Other languages
English (en)
Inventor
Yasuhiko Kasama
Kenji Omote
Original Assignee
Ideal Star Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ideal Star Inc filed Critical Ideal Star Inc
Publication of TW200511375A publication Critical patent/TW200511375A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
TW093125078A 2003-08-19 2004-08-19 Linear device TW200511375A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003294807 2003-08-19
JP2003321027 2003-09-12

Publications (1)

Publication Number Publication Date
TW200511375A true TW200511375A (en) 2005-03-16

Family

ID=34197157

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125078A TW200511375A (en) 2003-08-19 2004-08-19 Linear device

Country Status (4)

Country Link
US (1) US20060208324A1 (zh)
JP (2) JPWO2005018003A1 (zh)
TW (1) TW200511375A (zh)
WO (1) WO2005018003A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7495307B2 (en) 2003-11-20 2009-02-24 Ideal Star Inc. Columnar electric device
FR2941089B1 (fr) * 2009-01-15 2011-01-21 Commissariat Energie Atomique Transistor a source et drain filaires

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161672A (ja) * 1984-02-02 1985-08-23 Seiko Instr & Electronics Ltd 薄膜トランジスタとその製造方法
JPS6266664A (ja) * 1985-09-19 1987-03-26 Toshiba Corp 駆動回路基板
JP2654055B2 (ja) * 1987-02-28 1997-09-17 キヤノン株式会社 半導体基材の製造方法
JP2721183B2 (ja) * 1988-07-20 1998-03-04 キヤノン株式会社 非線形光学素子
JPH09203910A (ja) * 1996-01-29 1997-08-05 Hitachi Ltd 線型固体スイッチ素子とその製造方法、および前記線型固体スイッチ素子を画素選択手段として用いた平面表示素子
JP4352621B2 (ja) * 2001-03-05 2009-10-28 パナソニック株式会社 透光性導電性線状材料、繊維状蛍光体及び織物型表示装置
US6437422B1 (en) * 2001-05-09 2002-08-20 International Business Machines Corporation Active devices using threads
CN100385699C (zh) * 2001-10-30 2008-04-30 1...有限公司 压电器件和其制造方法
JP4247377B2 (ja) * 2001-12-28 2009-04-02 独立行政法人産業技術総合研究所 薄膜トランジスタ及びその製造方法
JP4104445B2 (ja) * 2002-12-12 2008-06-18 株式会社イデアルスター 線状のデバイス

Also Published As

Publication number Publication date
JP2011254099A (ja) 2011-12-15
JPWO2005018003A1 (ja) 2007-11-01
WO2005018003A1 (ja) 2005-02-24
US20060208324A1 (en) 2006-09-21
JP5467207B2 (ja) 2014-04-09

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