TW200507301A - Heterostructures for III-nitride light emitting devices - Google Patents

Heterostructures for III-nitride light emitting devices

Info

Publication number
TW200507301A
TW200507301A TW093117230A TW93117230A TW200507301A TW 200507301 A TW200507301 A TW 200507301A TW 093117230 A TW093117230 A TW 093117230A TW 93117230 A TW93117230 A TW 93117230A TW 200507301 A TW200507301 A TW 200507301A
Authority
TW
Taiwan
Prior art keywords
light emitting
layer
quantum well
barrier
iii
Prior art date
Application number
TW093117230A
Other languages
English (en)
Other versions
TWI345841B (en
Inventor
James C Kim
Nathan F Gardner
Michael R Krames
Yu-Chen Shen
Troy A Trottier
Jonathan J Wierer Jr
Original Assignee
Lumileds Lighting Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds Lighting Llc filed Critical Lumileds Lighting Llc
Publication of TW200507301A publication Critical patent/TW200507301A/zh
Application granted granted Critical
Publication of TWI345841B publication Critical patent/TWI345841B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW093117230A 2003-06-18 2004-06-15 Heterostructures for iii-nitride light emitting devices TWI345841B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/465,775 US6995389B2 (en) 2003-06-18 2003-06-18 Heterostructures for III-nitride light emitting devices

Publications (2)

Publication Number Publication Date
TW200507301A true TW200507301A (en) 2005-02-16
TWI345841B TWI345841B (en) 2011-07-21

Family

ID=33418289

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117230A TWI345841B (en) 2003-06-18 2004-06-15 Heterostructures for iii-nitride light emitting devices

Country Status (5)

Country Link
US (1) US6995389B2 (zh)
EP (1) EP1489708B1 (zh)
JP (1) JP2005012216A (zh)
DE (1) DE602004001927T2 (zh)
TW (1) TWI345841B (zh)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6955933B2 (en) * 2001-07-24 2005-10-18 Lumileds Lighting U.S., Llc Light emitting diodes with graded composition active regions
TWI238549B (en) * 2003-08-21 2005-08-21 Toyoda Gosei Kk Light-emitting semiconductor device and a method of manufacturing it
JP2005244207A (ja) * 2004-01-30 2005-09-08 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
KR100513923B1 (ko) * 2004-08-13 2005-09-08 재단법인서울대학교산학협력재단 질화물 반도체층을 성장시키는 방법 및 이를 이용하는 질화물 반도체 발광소자
FI20041213A0 (fi) * 2004-09-17 2004-09-17 Optogan Oy Puolijohdeheterorakenne
WO2006074916A1 (en) * 2005-01-13 2006-07-20 Ecole Polytechnique Federale De Lausanne Industrial Relations Office (Sri) Group iii nitride light-emitting devices having a polarization-doped region
WO2007005984A1 (en) * 2005-07-05 2007-01-11 Kansas State University Research Foundation Light emitting diode with mg doped superlattice
JP2007019277A (ja) * 2005-07-07 2007-01-25 Rohm Co Ltd 半導体発光素子
US20080258131A1 (en) * 2005-09-30 2008-10-23 Seoul Opto-Device Co., Ltd. Light Emitting Diode
KR100663911B1 (ko) * 2005-09-30 2007-01-02 서울옵토디바이스주식회사 발광 다이오드
JP5011699B2 (ja) * 2005-10-18 2012-08-29 住友電気工業株式会社 窒化物半導体発光素子
JP4954536B2 (ja) * 2005-11-29 2012-06-20 ローム株式会社 窒化物半導体発光素子
WO2007138657A1 (ja) * 2006-05-26 2007-12-06 Rohm Co., Ltd. 窒化物半導体発光素子
KR101234783B1 (ko) * 2006-07-13 2013-02-20 삼성전자주식회사 질화물계 반도체 발광소자 및 그 제조방법
EP1883121B1 (en) * 2006-07-26 2019-03-06 LG Electronics Inc. Nitride-based semiconductor light emitting device
CN100547819C (zh) * 2006-08-15 2009-10-07 中国科学院物理研究所 低极化效应的氮化镓基发光二极管芯片用外延材料及制法
KR100809226B1 (ko) 2006-09-29 2008-02-29 삼성전기주식회사 질화물 반도체 발광 소자 및 제조방법
JP4948134B2 (ja) * 2006-11-22 2012-06-06 シャープ株式会社 窒化物半導体発光素子
US20080149946A1 (en) 2006-12-22 2008-06-26 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
KR100920915B1 (ko) * 2006-12-28 2009-10-12 서울옵토디바이스주식회사 초격자 구조의 장벽층을 갖는 발광 다이오드
US9407068B2 (en) * 2007-02-20 2016-08-02 California Institute Of Technology Integrated broadband quantum cascade laser
EP1976031A3 (en) * 2007-03-29 2010-09-08 Seoul Opto Device Co., Ltd. Light emitting diode having well and/or barrier layers with superlattice structure
KR101459752B1 (ko) * 2007-06-22 2014-11-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
KR101393897B1 (ko) 2007-08-29 2014-05-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007058723A1 (de) * 2007-09-10 2009-03-12 Osram Opto Semiconductors Gmbh Lichtemittierende Struktur
KR100877774B1 (ko) * 2007-09-10 2009-01-16 서울옵토디바이스주식회사 개선된 구조의 발광다이오드
KR101438808B1 (ko) 2007-10-08 2014-09-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
CN101849034B (zh) * 2007-10-12 2011-12-21 晶能光电（江西）有限公司 使用硅烷作为前驱体制备n-型半导体材料的方法
KR100961109B1 (ko) * 2008-02-11 2010-06-07 삼성엘이디 주식회사 ＧａＮ계 반도체 발광소자
KR100957724B1 (ko) * 2008-06-05 2010-05-12 우리엘에스티 주식회사 화합물 반도체 발광소자 및 발광소자를 위한 발광소자의화합물 반도체 조성비 결정방법
JP2010003913A (ja) * 2008-06-20 2010-01-07 Sharp Corp 窒化物半導体発光ダイオード素子およびその製造方法
US20100176374A1 (en) * 2009-01-13 2010-07-15 Samsung Electro-Mechanics Co., Ltd Nitride semiconductor device
DE102009004895A1 (de) * 2009-01-16 2010-07-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
CN102439740B (zh) 2009-03-06 2015-01-14 李贞勋 发光器件
DE102009015569B9 (de) * 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US20100276730A1 (en) * 2009-04-29 2010-11-04 University Of Seoul Industry Cooperation Foundation Semiconductor device
US8253145B2 (en) * 2009-04-29 2012-08-28 University Of Seoul Industry Cooperation Foundation Semiconductor device having strong excitonic binding
WO2011021264A1 (ja) * 2009-08-17 2011-02-24 株式会社 東芝 窒化物半導体発光素子
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
JP5417307B2 (ja) * 2010-12-02 2014-02-12 株式会社東芝 半導体発光素子
KR20120138080A (ko) * 2011-06-14 2012-12-24 엘지이노텍 주식회사 발광 소자
JP2013008931A (ja) * 2011-06-27 2013-01-10 Rohm Co Ltd 半導体発光素子
TWI562396B (en) 2011-09-29 2016-12-11 Epistar Corp Light-emitting device
JP5868650B2 (ja) * 2011-10-11 2016-02-24 株式会社東芝 半導体発光素子
JP5238865B2 (ja) 2011-10-11 2013-07-17 株式会社東芝 半導体発光素子
KR101953716B1 (ko) * 2012-08-23 2019-03-05 엘지이노텍 주식회사 발광소자, 발광 소자 패키지 및 조명 시스템
DE102013200507A1 (de) * 2013-01-15 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
JP6183060B2 (ja) * 2013-08-24 2017-08-23 日亜化学工業株式会社 半導体発光素子
WO2015181648A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited An optoelectronic device
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
WO2015181656A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Electronic devices comprising n-type and p-type superlattices
JP6636459B2 (ja) 2014-05-27 2020-01-29 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 半導体構造と超格子とを用いた高度電子デバイス
EP3154140A4 (en) * 2014-06-04 2017-06-07 Sharp Kabushiki Kaisha Quantum cascade laser
KR102303459B1 (ko) 2015-03-11 2021-09-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자, 발광소자 패키지, 및 이를 포함하는 조명시스템
DE102016116425A1 (de) * 2016-09-02 2018-03-08 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US10297714B1 (en) * 2018-04-05 2019-05-21 Wisconsin Alumni Research Foundation Heterogeneous tunneling junctions for hole injection in nitride based light-emitting devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2800425B2 (ja) * 1991-01-16 1998-09-21 日本電気株式会社 半導体レーザ
JP3195159B2 (ja) * 1993-11-25 2001-08-06 株式会社東芝 光半導体素子
US5825796A (en) 1996-09-25 1998-10-20 Picolight Incorporated Extended wavelength strained layer lasers having strain compensated layers
GB2320610A (en) * 1996-12-21 1998-06-24 Sharp Kk laser device
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
US6274924B1 (en) * 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6278134B1 (en) 1999-05-21 2001-08-21 Lucent Technologies, Inc. Bi-directional unipolar semiconductor light source
GB9912583D0 (en) * 1999-05-28 1999-07-28 Arima Optoelectronics Corp A light emitting diode having a two well system with asymmetric tunneling
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
US6489636B1 (en) * 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures

Also Published As

Publication number Publication date
JP2005012216A (ja) 2005-01-13
US20040256611A1 (en) 2004-12-23
US6995389B2 (en) 2006-02-07
TWI345841B (en) 2011-07-21
EP1489708A1 (en) 2004-12-22
DE602004001927T2 (de) 2007-09-06
DE602004001927D1 (de) 2006-09-28
EP1489708B1 (en) 2006-08-16

Similar Documents

Publication Publication Date Title
TW200507301A (en) Heterostructures for III-nitride light emitting devices
KR100862497B1 (ko) 질화물 반도체 소자
JP5726405B2 (ja) トンネル接合を有する発光ダイオード
TW200625679A (en) Group Ⅲ nitride based quantum well light emitting device structures with an indium containing capping structure
MY129574A (en) Group iii nitride led with undoped cladding layer and multiple quantum well
MY137396A (en) Group iii nitride based light emitting diode structures with a quantum well and superlattice, group iii nitride based quantum well structures and group iii nitride based superlattice structures
TW200735420A (en) Nitride semiconductor light-emitting element
EP1619729A4 (en) LIGHT EMITTING DEVICE BASED ON GALLIUM NITRIDE
WO2009006870A3 (de) Strahlungsemittierender halbleiterkörper
US8890114B2 (en) Light-emitting device
TW201130157A (en) Semiconductor light emitting device
EP2709172A3 (en) Light emitting device
US11127879B2 (en) Light-emitting diode
TW200802969A (en) Nitride semiconductor element
TWI559567B (zh) 氮化物半導體層積體及半導體發光元件
EP1564854A4 (en) SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING SAME
EP2408028A3 (en) Light emitting device
EP2535952A3 (en) Light emitting device
US8294164B2 (en) Light-emitting device using clad layer consisting of asymmetrical units
TW200706945A (en) Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
TW200625741A (en) Method for increasing maximum modulation speed of a light emitting device, and light emitting device with increased maximum modulation speed and quantum well structure thereof
CN108321267A (zh) 氮化物半导体结构及半导体发光元件
CN111201616A (zh) 具有氮化硼合金电子阻挡层的光电器件及制造方法
CN105514239A (zh) 一种发光二极管
WO2007059146A3 (en) Led having lateral current injection active region