TW200507104A - Plasma etching method and plasma treatment apparatus - Google Patents

Plasma etching method and plasma treatment apparatus

Info

Publication number
TW200507104A
TW200507104A TW093118870A TW93118870A TW200507104A TW 200507104 A TW200507104 A TW 200507104A TW 093118870 A TW093118870 A TW 093118870A TW 93118870 A TW93118870 A TW 93118870A TW 200507104 A TW200507104 A TW 200507104A
Authority
TW
Taiwan
Prior art keywords
radio frequency
mhz
power source
matching unit
frequency power
Prior art date
Application number
TW093118870A
Other languages
English (en)
Chinese (zh)
Other versions
TWI311782B (enExample
Inventor
Tsutomu Satoyoshi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200507104A publication Critical patent/TW200507104A/zh
Application granted granted Critical
Publication of TWI311782B publication Critical patent/TWI311782B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
TW093118870A 2003-08-01 2004-06-28 Plasma etching method and plasma treatment apparatus TW200507104A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003285125A JP3905870B2 (ja) 2003-08-01 2003-08-01 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200507104A true TW200507104A (en) 2005-02-16
TWI311782B TWI311782B (enExample) 2009-07-01

Family

ID=34364864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118870A TW200507104A (en) 2003-08-01 2004-06-28 Plasma etching method and plasma treatment apparatus

Country Status (4)

Country Link
JP (1) JP3905870B2 (enExample)
KR (1) KR100702726B1 (enExample)
CN (1) CN100477104C (enExample)
TW (1) TW200507104A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488545B (zh) * 2007-09-10 2015-06-11 Tokyo Electron Ltd Plasma processing device and plasma processing method and memory medium
US9466475B2 (en) 2007-11-05 2016-10-11 Ulvac, Inc. Ashing device

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7879185B2 (en) * 2003-12-18 2011-02-01 Applied Materials, Inc. Dual frequency RF match
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4515950B2 (ja) * 2005-03-31 2010-08-04 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法およびコンピュータ記憶媒体
CN100367829C (zh) * 2005-12-08 2008-02-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体激励方法
JP5031252B2 (ja) * 2006-03-30 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置
CN101207034B (zh) * 2006-12-20 2010-05-19 北京北方微电子基地设备工艺研究中心有限责任公司 腔室上盖及包含该上盖的反应腔室
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
CN102438389B (zh) 2010-09-29 2013-06-05 中微半导体设备(上海)有限公司 单一匹配网络、其构建方法和该匹配网络射频功率源系统
CN102694525B (zh) * 2011-03-23 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 双频滤波装置及其处理方法和半导体设备
US8420545B2 (en) * 2011-05-23 2013-04-16 Nanya Technology Corporation Plasma etching method and plasma etching apparatus for preparing high-aspect-ratio structures
CN103187943B (zh) * 2011-12-28 2017-02-08 中微半导体设备(上海)有限公司 一种用于静电吸盘的射频滤波器
JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
US10410836B2 (en) * 2017-02-22 2019-09-10 Lam Research Corporation Systems and methods for tuning to reduce reflected power in multiple states
KR102330944B1 (ko) * 2018-01-29 2021-12-01 가부시키가이샤 알박 반응성 이온 에칭 장치
KR102223875B1 (ko) * 2019-10-30 2021-03-05 주식회사 뉴파워 프라즈마 다중 주파수를 사용하는 건식 식각 장비를 위한 고주파 전원 장치

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488545B (zh) * 2007-09-10 2015-06-11 Tokyo Electron Ltd Plasma processing device and plasma processing method and memory medium
US9466475B2 (en) 2007-11-05 2016-10-11 Ulvac, Inc. Ashing device

Also Published As

Publication number Publication date
KR20050016012A (ko) 2005-02-21
JP3905870B2 (ja) 2007-04-18
KR100702726B1 (ko) 2007-04-03
TWI311782B (enExample) 2009-07-01
CN1581445A (zh) 2005-02-16
JP2005056997A (ja) 2005-03-03
CN100477104C (zh) 2009-04-08

Similar Documents

Publication Publication Date Title
TW200507104A (en) Plasma etching method and plasma treatment apparatus
WO2004029604A3 (en) Waveform generator electronics based on tuned lc circuits
TW200608541A (en) Method and apparatus for dechucking a substrate
KR101164531B1 (ko) 스위칭 가능한 바이어스 파워를 구비하는 플라즈마 챔버 및 이를 위한 스위칭 가능한 주파수 rf 매치 네트워크
US20050133163A1 (en) Dual frequency RF match
AU2002213451A1 (en) System, apparatus, and method for processing wafer using single frequency rf power in plasma processing chamber
CN107068529A (zh) 用于控制等离子体边缘区域的系统和方法
WO2003101160A3 (en) Method and apparatus for vhf plasma processing
PT1439883E (pt) Dispositivo e método para terapia electromagnética
WO2020177919A3 (de) Vorrichtung zur behandlung eines bodens und verfahren zum betreiben einer derartigen vorrichtung
EP1179834A3 (en) Plasma processing apparatus and performance validation system therefor
TW200520012A (en) Multiple frequency plasma etch reactor
TW200507039A (en) Plasma generation and control using a dual frequency RF source
KR100648336B1 (ko) 플라즈마 챔버와 관련하여 사용되는 고정 임피던스 변형 네트워크 장치 및 방법
CN110888380B (zh) 一种半导体设备中滤波电路的控制方法和半导体设备
CN1898767A (zh) 双频rf匹配
CA2641319A1 (en) Method and apparatus for controlling an output voltage in a power amplifier
TW200520554A (en) Television tuner and method of processing received RF signal
WO2004097909A3 (en) Method and apparatus for deep trench silicon etch
US20030192475A1 (en) Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber
JP4408707B2 (ja) プラズマ処理装置
CN110867362A (zh) 射频结构、工艺腔室和等离子体的生成方法
WO2003018722A3 (en) Circuit and method for processing an audio signal
CN216648218U (zh) 一种射频提供装置和等离子体处理设备
TWI416995B (zh) A plasma processing chamber having a switchable bias frequency, and a switchable matching network

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent