TW200506921A - |Information recording medium and method manufacturing the same - Google Patents

|Information recording medium and method manufacturing the same

Info

Publication number
TW200506921A
TW200506921A TW093106718A TW93106718A TW200506921A TW 200506921 A TW200506921 A TW 200506921A TW 093106718 A TW093106718 A TW 093106718A TW 93106718 A TW93106718 A TW 93106718A TW 200506921 A TW200506921 A TW 200506921A
Authority
TW
Taiwan
Prior art keywords
recording medium
information recording
same
method manufacturing
group
Prior art date
Application number
TW093106718A
Other languages
English (en)
Inventor
Taeko Suenaga
Rie Kojima
Takashi Nishihara
Noboru Yamada
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200506921A publication Critical patent/TW200506921A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/2403—Layers; Shape, structure or physical properties thereof
    • G11B7/24035—Recording layers
    • G11B7/24038—Multiple laminated recording layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
TW093106718A 2003-03-24 2004-03-12 |Information recording medium and method manufacturing the same TW200506921A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003079994 2003-03-24

Publications (1)

Publication Number Publication Date
TW200506921A true TW200506921A (en) 2005-02-16

Family

ID=33094859

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106718A TW200506921A (en) 2003-03-24 2004-03-12 |Information recording medium and method manufacturing the same

Country Status (7)

Country Link
US (1) US20060141202A1 (zh)
EP (1) EP1609615A4 (zh)
JP (1) JPWO2004085167A1 (zh)
KR (1) KR20050120639A (zh)
CN (1) CN1764550A (zh)
TW (1) TW200506921A (zh)
WO (1) WO2004085167A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI469143B (zh) * 2003-07-24 2015-01-11 Panasonic Corp 資訊記錄媒體及其製造方法
KR100597992B1 (ko) * 2004-03-22 2006-07-10 한국과학기술연구원 초해상층을 갖는 광 정보저장 매체
WO2006057163A1 (ja) * 2004-11-26 2006-06-01 Matsushita Electric Industrial Co., Ltd. 光学情報記録媒体および光学情報記録媒体の記録方法
BRPI0712752A2 (pt) 2006-06-12 2011-05-10 Panasonic Corp mÉtodo de leitura para ler e reproduzir informaÇço, meio àptico de gravaÇço e mÉtodo para produzir um meio àptico de gravaÇço
JP5386374B2 (ja) * 2008-01-31 2014-01-15 パナソニック株式会社 光学的情報記録媒体及びその製造方法
JPWO2009096165A1 (ja) * 2008-01-31 2011-05-26 パナソニック株式会社 光学的情報記録媒体とその製造方法、及びターゲット
FR2929747A1 (fr) * 2008-04-04 2009-10-09 Commissariat Energie Atomique Disque optique a super-resolution a stabilite de lecture elevee
KR101185989B1 (ko) * 2010-07-07 2012-09-25 에스케이하이닉스 주식회사 반도체소자의 스토리지노드 형성방법
JP5780938B2 (ja) * 2011-12-13 2015-09-16 株式会社東芝 半導体装置の製造方法
CN106611814B (zh) * 2015-10-23 2020-05-05 中国科学院上海微系统与信息技术研究所 用于相变存储器的相变材料及其制备方法
CN108666416B (zh) * 2017-04-01 2020-06-30 中国科学院上海微系统与信息技术研究所 相变存储器单元及其制备方法
CN110098322A (zh) * 2018-01-30 2019-08-06 中国科学院上海微系统与信息技术研究所 C掺杂Sc-Sb-Te相变存储材料、相变存储器单元及其制备方法
JP7097599B2 (ja) * 2018-02-28 2022-07-08 国立大学法人東北大学 相変化材料および相変化材料を用いた相変化型メモリ素子
CN112397644B (zh) * 2019-08-15 2023-07-14 中国科学院上海微系统与信息技术研究所 一种相变材料、相变存储单元及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3151848B2 (ja) * 1991-04-25 2001-04-03 松下電器産業株式会社 光学情報記録媒体
JPH05116455A (ja) * 1991-06-28 1993-05-14 Fuji Xerox Co Ltd 相変化光記録媒体
JPH06115251A (ja) * 1992-10-02 1994-04-26 Fuji Xerox Co Ltd 相変化型光記録媒体
KR0153033B1 (ko) * 1993-06-18 1998-12-15 가나이 쯔또무 정보기록용 박막 및 정보기록매체
JPH07223372A (ja) * 1993-06-18 1995-08-22 Hitachi Ltd 情報記録用薄膜および情報記録媒体
TW484126B (en) * 1999-03-26 2002-04-21 Matsushita Electric Ind Co Ltd Manufacturing and recording regeneration method for information record medium
JP2001273673A (ja) * 1999-11-17 2001-10-05 Matsushita Electric Ind Co Ltd 光記録媒体およびその製造方法
JP4339999B2 (ja) * 1999-12-20 2009-10-07 パナソニック株式会社 光学的情報記録媒体とその製造方法、記録再生方法及び記録再生装置
JP2002079757A (ja) * 2000-06-23 2002-03-19 Tdk Corp 光記録媒体
JP2002304767A (ja) * 2001-01-31 2002-10-18 Ricoh Co Ltd 相変化型光情報記録媒体
JP2002225436A (ja) * 2001-02-06 2002-08-14 Ricoh Co Ltd 光情報記録媒体及びその製造方法
JP2002337451A (ja) * 2001-03-15 2002-11-27 Ricoh Co Ltd 光記録媒体
TW527592B (en) * 2001-03-19 2003-04-11 Matsushita Electric Ind Co Ltd Optical information recording media, and the manufacturing method and record regeneration method of the same
JP3908571B2 (ja) * 2001-03-19 2007-04-25 松下電器産業株式会社 光学的情報記録媒体とその製造方法およびその記録再生方法
JP2002293029A (ja) * 2001-03-30 2002-10-09 Ricoh Co Ltd 光情報記録媒体
JP2002301869A (ja) * 2001-04-05 2002-10-15 Ricoh Co Ltd 光記録媒体

Also Published As

Publication number Publication date
JPWO2004085167A1 (ja) 2006-06-29
US20060141202A1 (en) 2006-06-29
WO2004085167A1 (ja) 2004-10-07
EP1609615A4 (en) 2008-05-14
KR20050120639A (ko) 2005-12-22
CN1764550A (zh) 2006-04-26
EP1609615A1 (en) 2005-12-28

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