TW200504978A - Semiconductor device and the power system - Google Patents

Semiconductor device and the power system

Info

Publication number
TW200504978A
TW200504978A TW093113035A TW93113035A TW200504978A TW 200504978 A TW200504978 A TW 200504978A TW 093113035 A TW093113035 A TW 093113035A TW 93113035 A TW93113035 A TW 93113035A TW 200504978 A TW200504978 A TW 200504978A
Authority
TW
Taiwan
Prior art keywords
path
main current
current path
driving
side switch
Prior art date
Application number
TW093113035A
Other languages
Chinese (zh)
Other versions
TWI371838B (en
Inventor
Tomoaki Uno
Takayuki Iwasaki
Nobuyoshi Matsuura
Masaki Shiraishi
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200504978A publication Critical patent/TW200504978A/en
Application granted granted Critical
Publication of TWI371838B publication Critical patent/TWI371838B/zh

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Abstract

The subject of the present invention is to greatly improve the voltage switching efficiency by separating the path of the gate driving the high side switch and the main current path. The solution is to provide a power MOSFET 1, such as the transistor for high side switch as non-insulative DC/DC converter. The MOSFET 1 is used as the electrode of the source terminal ST, which is connected to an outer lead LS1 and two outer leads LS1 via the bonding wire W, wherein the outer lead LS1 is connected to the external terminal of the path for the driving gate, and the outer leads LS2 are connected to the external terminal of the main current path. The present invention separates and then connects the main current path with the path for driving gates, so as to reduce the effect of parasitic inductance, and improve the voltage switching efficiency.
TW093113035A 2003-05-14 2004-05-10 Semiconductor device and the power system TW200504978A (en)

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TWI573243B (en) * 2008-09-10 2017-03-01 瑞薩電子股份有限公司 Semiconductor device

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