TW200504874A - Cleaning method for a substrate processing apparatus - Google Patents

Cleaning method for a substrate processing apparatus

Info

Publication number
TW200504874A
TW200504874A TW093112949A TW93112949A TW200504874A TW 200504874 A TW200504874 A TW 200504874A TW 093112949 A TW093112949 A TW 093112949A TW 93112949 A TW93112949 A TW 93112949A TW 200504874 A TW200504874 A TW 200504874A
Authority
TW
Taiwan
Prior art keywords
processing apparatus
cleaning method
substrate processing
cleaning
microwave plasma
Prior art date
Application number
TW093112949A
Other languages
English (en)
Inventor
Tadahiro Ohmi
Masaki Hirayama
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Publication of TW200504874A publication Critical patent/TW200504874A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW093112949A 2003-05-08 2004-05-07 Cleaning method for a substrate processing apparatus TW200504874A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003130543A JP2004335789A (ja) 2003-05-08 2003-05-08 基板処理装置のクリーニング方法

Publications (1)

Publication Number Publication Date
TW200504874A true TW200504874A (en) 2005-02-01

Family

ID=33432107

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093112949A TW200504874A (en) 2003-05-08 2004-05-07 Cleaning method for a substrate processing apparatus

Country Status (4)

Country Link
US (1) US20060281323A1 (zh)
JP (1) JP2004335789A (zh)
TW (1) TW200504874A (zh)
WO (1) WO2004100246A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4680066B2 (ja) * 2004-01-28 2011-05-11 東京エレクトロン株式会社 基板処理装置の処理室清浄化方法、基板処理装置、および基板処理方法
WO2006082724A1 (ja) * 2005-02-02 2006-08-10 Tokyo Electron Limited クリーニング方法およびプラズマ処理方法
US8366953B2 (en) * 2006-09-19 2013-02-05 Tokyo Electron Limited Plasma cleaning method and plasma CVD method
JP2009054818A (ja) * 2007-08-28 2009-03-12 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法および終点検出方法
JP5751895B2 (ja) 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
JP5643679B2 (ja) * 2011-03-02 2014-12-17 大陽日酸株式会社 炭化珪素の除去方法
JP2015185565A (ja) * 2014-03-20 2015-10-22 東京エレクトロン株式会社 シリコン酸化膜形成装置の洗浄方法、シリコン酸化膜の形成方法、及び、シリコン酸化膜形成装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
JPH06208972A (ja) * 1993-01-12 1994-07-26 Matsushita Electric Ind Co Ltd プラズマ処理方法
JP3338123B2 (ja) * 1993-04-30 2002-10-28 株式会社東芝 半導体製造装置の洗浄方法及び半導体装置の製造方法
JP3399467B2 (ja) * 1993-08-19 2003-04-21 東京エレクトロン株式会社 プラズマ処理装置及びクリーニング方法
JPH09139349A (ja) * 1995-06-07 1997-05-27 Varian Assoc Inc スパッタクリーニングチャンバーから堆積物をクリーニングする方法
JPH1140502A (ja) * 1997-07-15 1999-02-12 Hitachi Ltd 半導体製造装置のドライクリーニング方法
US6797188B1 (en) * 1997-11-12 2004-09-28 Meihua Shen Self-cleaning process for etching silicon-containing material
TW413848B (en) * 1998-01-10 2000-12-01 Tokyo Electron Ltd Semiconductor device with insulation film made of fluorine added-carbon film and method of manufacturing the same
US6360754B2 (en) * 1998-03-16 2002-03-26 Vlsi Technology, Inc. Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber
JPH11297676A (ja) * 1998-04-06 1999-10-29 Kokusai Electric Co Ltd 電子部品製造装置
US6124927A (en) * 1999-05-19 2000-09-26 Chartered Semiconductor Manufacturing Ltd. Method to protect chamber wall from etching by endpoint plasma clean
US6527909B2 (en) * 2000-04-27 2003-03-04 Tokyo Electron Limited Plasma processing apparatus
JP2002057106A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置のクリーニング方法及び処理装置
JP2002057149A (ja) * 2000-08-08 2002-02-22 Tokyo Electron Ltd 処理装置及びそのクリーニング方法
US6847003B2 (en) * 2000-10-13 2005-01-25 Tokyo Electron Limited Plasma processing apparatus
JP4402860B2 (ja) * 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
US6581612B1 (en) * 2001-04-17 2003-06-24 Applied Materials Inc. Chamber cleaning with fluorides of iodine
JP3421329B2 (ja) * 2001-06-08 2003-06-30 東京エレクトロン株式会社 薄膜形成装置の洗浄方法

Also Published As

Publication number Publication date
JP2004335789A (ja) 2004-11-25
WO2004100246A1 (ja) 2004-11-18
US20060281323A1 (en) 2006-12-14

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