TW200502718A - Methods of removing photoresist from substrates - Google Patents

Methods of removing photoresist from substrates

Info

Publication number
TW200502718A
TW200502718A TW093117509A TW93117509A TW200502718A TW 200502718 A TW200502718 A TW 200502718A TW 093117509 A TW093117509 A TW 093117509A TW 93117509 A TW93117509 A TW 93117509A TW 200502718 A TW200502718 A TW 200502718A
Authority
TW
Taiwan
Prior art keywords
carbon
methods
substrates
rich layer
layer
Prior art date
Application number
TW093117509A
Other languages
English (en)
Other versions
TWI364631B (en
Inventor
Erik A Edelberg
Robert P Chebi
Gladys Sowan Lo
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200502718A publication Critical patent/TW200502718A/zh
Application granted granted Critical
Publication of TWI364631B publication Critical patent/TWI364631B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
TW093117509A 2003-06-17 2004-06-17 Methods of removing photoresist from substrates TWI364631B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/462,830 US7083903B2 (en) 2003-06-17 2003-06-17 Methods of etching photoresist on substrates

Publications (2)

Publication Number Publication Date
TW200502718A true TW200502718A (en) 2005-01-16
TWI364631B TWI364631B (en) 2012-05-21

Family

ID=33516986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117509A TWI364631B (en) 2003-06-17 2004-06-17 Methods of removing photoresist from substrates

Country Status (8)

Country Link
US (2) US7083903B2 (zh)
EP (1) EP1644776A2 (zh)
JP (1) JP4648900B2 (zh)
KR (1) KR101052707B1 (zh)
CN (1) CN1816773B (zh)
MY (1) MY139113A (zh)
TW (1) TWI364631B (zh)
WO (1) WO2004111727A2 (zh)

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US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
JP5362176B2 (ja) * 2006-06-12 2013-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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US7807062B2 (en) * 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
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US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7569484B2 (en) * 2006-08-14 2009-08-04 Micron Technology, Inc. Plasma and electron beam etching device and method
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US7935637B2 (en) * 2007-08-16 2011-05-03 International Business Machines Corporation Resist stripping methods using backfilling material layer
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
KR102311520B1 (ko) 2010-04-13 2021-10-13 지이 비디오 컴프레션, 엘엘씨 이미지들의 멀티-트리 서브-디비젼을 이용한 비디오 코딩
KR101942092B1 (ko) * 2012-07-30 2019-01-25 한국전자통신연구원 유기발광소자 제조방법
US9305771B2 (en) * 2013-12-20 2016-04-05 Intel Corporation Prevention of metal loss in wafer processing
US9469912B2 (en) * 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing
CN104821273B (zh) * 2014-09-05 2017-11-28 武汉新芯集成电路制造有限公司 一种去除深孔蚀刻后沟槽内残留物的方法
KR102477302B1 (ko) 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
CN105843001B (zh) * 2016-03-28 2020-03-24 武汉新芯集成电路制造有限公司 一种用于含碳多孔材料基底的光刻涂层的去除方法
US10675657B2 (en) * 2018-07-10 2020-06-09 Visera Technologies Company Limited Optical elements and method for fabricating the same

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Also Published As

Publication number Publication date
CN1816773A (zh) 2006-08-09
MY139113A (en) 2009-08-28
WO2004111727A2 (en) 2004-12-23
JP2006528418A (ja) 2006-12-14
WO2004111727A3 (en) 2005-07-07
KR101052707B1 (ko) 2011-08-01
KR20060010845A (ko) 2006-02-02
TWI364631B (en) 2012-05-21
US20040256357A1 (en) 2004-12-23
EP1644776A2 (en) 2006-04-12
JP4648900B2 (ja) 2011-03-09
US20060201911A1 (en) 2006-09-14
US7083903B2 (en) 2006-08-01
CN1816773B (zh) 2010-08-25

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