TW200500763A - Thin film transistor array panel and manufacturing method thereof - Google Patents

Thin film transistor array panel and manufacturing method thereof

Info

Publication number
TW200500763A
TW200500763A TW092123613A TW92123613A TW200500763A TW 200500763 A TW200500763 A TW 200500763A TW 092123613 A TW092123613 A TW 092123613A TW 92123613 A TW92123613 A TW 92123613A TW 200500763 A TW200500763 A TW 200500763A
Authority
TW
Taiwan
Prior art keywords
lines
gate
data
data lines
manufacturing
Prior art date
Application number
TW092123613A
Other languages
English (en)
Other versions
TWI289718B (en
Inventor
Dong-Gyu Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200500763A publication Critical patent/TW200500763A/zh
Application granted granted Critical
Publication of TWI289718B publication Critical patent/TWI289718B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW092123613A 2002-08-27 2003-08-27 Thin film transistor array panel and manufacturing method thereof TWI289718B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020050778A KR100870013B1 (ko) 2002-08-27 2002-08-27 박막 트랜지스터 어레이 기판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
TW200500763A true TW200500763A (en) 2005-01-01
TWI289718B TWI289718B (en) 2007-11-11

Family

ID=32064872

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092123613A TWI289718B (en) 2002-08-27 2003-08-27 Thin film transistor array panel and manufacturing method thereof

Country Status (5)

Country Link
US (2) US6927420B2 (zh)
JP (1) JP4662700B2 (zh)
KR (1) KR100870013B1 (zh)
CN (1) CN100346218C (zh)
TW (1) TWI289718B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI382262B (zh) * 2008-06-02 2013-01-11 Lg Display Co Ltd 液晶顯示裝置之陣列基板及其製造方法

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JP4640690B2 (ja) * 2002-07-24 2011-03-02 日本電気株式会社 アクティブマトリクス有機ｅｌ表示装置の製造方法
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
KR100575233B1 (ko) * 2003-11-04 2006-05-02 엘지.필립스 엘시디 주식회사 액정표시장치 제조 방법
KR101090246B1 (ko) * 2003-12-10 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판
KR100983586B1 (ko) * 2003-12-30 2010-09-28 엘지디스플레이 주식회사 액정표시장치 및 이의 제조방법
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CN102544027B (zh) * 2004-09-15 2016-02-17 株式会社半导体能源研究所 半导体器件
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KR101112549B1 (ko) * 2005-01-31 2012-06-12 삼성전자주식회사 박막 트랜지스터 표시판
KR20060114757A (ko) * 2005-05-02 2006-11-08 삼성전자주식회사 박막 트랜지스터 기판
KR101189271B1 (ko) * 2005-07-12 2012-10-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20070014715A (ko) * 2005-07-29 2007-02-01 삼성전자주식회사 개구율이 향상된 어레이 기판 및 이의 제조방법
KR101230305B1 (ko) * 2005-12-08 2013-02-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101263196B1 (ko) 2006-01-02 2013-05-10 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
KR101411660B1 (ko) * 2006-12-28 2014-06-27 엘지디스플레이 주식회사 정전기 방지 소자 및 이를 갖는 유기전계발광소자
JP5127234B2 (ja) * 2007-01-10 2013-01-23 株式会社ジャパンディスプレイウェスト 半導体装置、電気光学装置並びに電子機器
CN101256297B (zh) * 2008-03-28 2010-06-23 昆山龙腾光电有限公司 液晶显示装置及其阵列基板和母基板
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP5587592B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
US8716605B2 (en) * 2010-10-22 2014-05-06 Lg Display Co., Ltd. Structure for shorting line connecting signal lines of flat panel display device
KR101210474B1 (ko) * 2011-10-21 2012-12-11 실리콘 디스플레이 (주) 정전기에 강한 센서어레이
CN109096387B (zh) 2012-06-04 2021-11-30 奥普科生物制品有限公司 聚乙二醇化的oxm变体
CN103809318A (zh) * 2014-02-14 2014-05-21 京东方科技集团股份有限公司 一种阵列基板制造方法、阵列基板及显示设备
CN104078469B (zh) 2014-06-17 2017-01-25 京东方科技集团股份有限公司 一种阵列基板及其制备方法，显示面板、显示装置
KR102235248B1 (ko) * 2014-10-20 2021-04-05 삼성디스플레이 주식회사 표시 장치
KR20240062678A (ko) 2022-11-02 2024-05-09 하복진 개량형 다용도 볶음장치

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI382262B (zh) * 2008-06-02 2013-01-11 Lg Display Co Ltd 液晶顯示裝置之陣列基板及其製造方法

Also Published As

Publication number Publication date
US20040113149A1 (en) 2004-06-17
JP4662700B2 (ja) 2011-03-30
US20060011920A1 (en) 2006-01-19
KR20040018784A (ko) 2004-03-04
KR100870013B1 (ko) 2008-11-21
CN100346218C (zh) 2007-10-31
US7355206B2 (en) 2008-04-08
US6927420B2 (en) 2005-08-09
JP2004088113A (ja) 2004-03-18
TWI289718B (en) 2007-11-11
CN1501153A (zh) 2004-06-02

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