200428684 玖、發明說明： 【發明所屬之技術領域】 本發明係關於積層型壓電元件、積層型壓電致動器或厣 電感測器等之陶瓷元件之製造方法及其製造系統，更詳言 之係關於介以通孔於陶瓷層之一端面側與另一端面侧之間 形成電氣性連接的陶瓷元件之製造方法及製造系統。 【先前技術】 近年5為陶瓷元件之一的積層型壓電元件的技術開發正 在積極推進。例如日本專利特開2002〜254634號公報中揭 示有此種積層型壓電元件。 該專利文獻中揭示之積層型壓電元件係將圖案形成多數 個單體電極之壓電體層與形成共通電極圖案之壓電體層交 互疊層，並將排列於積層型壓電元件之厚度方向上的^ 體電極介以形成於壓電體層之通孔以導f構件進行連接 者。於如此之積層型μ電元件中，可藉由向特定之單體電 ，與共通電極之間施加電壓’於壓電體層上使對應於該: 定之單體電極的活性部（由⑨壓電效應產生崎變 八又、隹 行選擇性移位。 ）進 【發明内容】 (發明所欲解決之課題） 於上述之以積層型壓電元件為首之陶£元件中 _ ::體：小型化及形成於元件上之電極等的高集成化，： 確貫實現電氣性連接的技術。 间 91940.doc 因此，本發明係鑒於 # ^ , 荨N形而完成者，其目的在於接 仏，丨以通孔於陶瓷層之一 仕於扼 ^ ^ ^ 面側契另一端面側之間確實來 成屯軋性連接的陶瓷元 ^ ^ (解決問題之手段）之“方法及製造系統。 為達成上述目的，本發明之第㈣究元件之製造 以形成於陶兗層上之通孔 糸" 工j尤清之一鳊面側與另一她 面側之間形成電氣性連接者， 仅枝摄Μ 八将徵為具備以下步驟··於 保持構件之表面形成成 、 層陶瓷原材料層之步驟、 吏保持構件及陶£原材料層同時作熱收縮之㈣1心 …收、％後之陶£原材料層上形成通孔的步驟。 於此第1陶究元件之製造方法中，於保持構件之表面形成 陶是原材料層後，並於該陶莞原材料層上形成通孔之前， 使保持構件及陶竟原材料層作熱收縮。藉此，可於形成通 孔之後的步驟中’即使加熱保持構件及陶_亮層，保持構件 及陶究層亦幾乎不會產生進一步熱收縮。因此可防止通孔 形狀畸變、通孔之形成位置產生偏移之情形，陶瓷層之一 端面側與另-端面側之間的電氣性連接可介以通孔確實完 成0 又，於此第1陶兗元件之製造方法中，具備形成通孔後向 陶竟原材料層印刷糊膠狀之導電材料之步驟，以及將印刷 於陶瓷原材料層之導電材料以特定的乾燥溫度進行乾燥之 步驟’於熱收縮步驟中’較好為以高於乾燥溫度的温度使 保持構件及陶瓷原材料層作熱收縮。如此若以較導電材料 乾燥時之特定乾燥溫度為高的溫度，使保持構件及陶究原 91940.doc -8- 200428684 材料層作熱收縮時，可防止於乾燥導電材料之時通孔形狀 產生畸變，或通孔之形成位置產生偏移之情形。 更且，本發明之第2陶曼元件之製造方法^以形成於陶 曼層上之通孔於陶究層《-端面側與另面側之間形成 電氣性連接者，其特徵為具備向含有含鉛化合物並且成為 陶瓷層之陶瓷原材料照射YAG雷射的第2次高諧波或第3\欠 高諧波之雷射光，藉以於陶瓷原材料上形成通孔之步驟。 本發明人發現:藉由向含有含鉛化合物(鈦酸鉛或錯：酸 鉛等）之陶瓷原材料照射YAG雷射的第2次高諧波或第3次 高諧波之雷射光，可形成如下之良好通孔。 1 尤則通常 以CO,雷射進行雷射光照射時，於通孔週邊大量堆積飛散 物，相對於此進行YAG雷射之第2次高諧波或第3次高諧L 的雷射光照射時，於通孔週邊可幾乎消除飛散物之堆 藉此可防止因飛散物造成之通孔堵塞，因此例如可藉由向 通孔内進行導電糊膠之充填網版印刷，於通孔内確^形成 導電構件。HUb，陶竟層之—端面側與另—端面側之間的 電氣性連接可介以通孔確實完成。 、 又，於此第2陶瓷元件之製造方法中，較好為使雷射光藉 由例如Q切換進行脈衝振盪。通常藉由雷射光照射形成通孔 時，若非以例如Q切換進行之脈衝振盪時，則加工管理困 難通孔之形狀於雷射光入射面側成為底部擴大的圓錐 形，又因加工產生之飛散物不會飛散起來而是成為加工屑 堆積於通孔之週邊。然而將雷射光藉由例如Q切換進行脈衝 振盪藉此可輕易獲得較大之峰值輸出，可抑制通孔形狀 91940.doc -9 - 擴大為圓錐狀或飛散物堆積 材料之-端面側照射雷射光而::通:此 之方式於-端面上形成電極圖案^此通孔 電極之通孔之相對尺寸縮 ；传’可將相對於該 進而可實現電極之高集成化或陶^7極更加微小化， 7尤70件之小型化。 本么月之第3陶瓷兀件的製造方法 莞層上之通孔於陶究層之一端面側盘另_端形成於陶 電氣性連接者，其特徵為具備藉由於成為陶究c ::上印刷導電材料，形成覆蓋形成於二= == 的乾燥溫度進行乾燥之步驟，並且 卜^力、^步驟與乾燥導電材料之步驟之間，以低於乾 1加熱溫度將印刷有導電材料之陶竟原材料進行加 成：:::㈣元件之製造方法中，藉由導電材料之印刷形 完全乾燥之乾焊严厗A k t 竹邊♦电材枓 葬由㉝〜度為低的加熱溫度將㈣原材料加熱。 ':印刷於陶瓷原材料上之導電材料會軟化，因 〜;。J圍遍佈於通孔内。此效果於加熱溫度為25。。 +材料：广皿度時較為顯著。繼而，此加熱後通過使導 =枓乾無，可於通孔内確實形成自通孔之—端至另 ㈣的導電㈣。因此’根據此陶曼元件之製造方法，可 介以通孔確貫實頭卩自 電氣性連接。是層之一端面側與另一端面側之間的 91940.doc -10- 200428684 陶=本之=之第4陶"元件的製造方法’係介以形成於 之通孔於陶£層之—端面側與另—端面側 成包氣性連接者，兑 ^" ，、特徵為具備以下之步驟··以第1標記為 土、’，於成為陶瓷層之陶瓷原材料上形成通孔的+ 驟；向陶竟原材料印刷導電材料，藉以形成第2標記… 通孔之-端侧的導電圖案之步驟；及檢測fi標記： s己之間的位置關係之步驟。 "" 、本^月之陶170件的製造系統係介以形成於陶兗層 ^之通孔’於陶£層之—端面側與另—端面側之間形成電 連接者，其特徵為具備以下機構：通孔形成機構，其 以第1標記為位置基準，於成為陶竟層之陶竟原材料上形成 ^孔，印刷機構，其向陶竟原材料印刷導電材料，藉以形 成弟2標記與覆蓋通孔之一端側的導電圖案；及檢測機構， 其檢測第1標記與第2標記之間的位置關係。 於弟4陶:是疋件之製造方法及製造系統中，係以第1標記 為位置基準形成通孔，並藉由印刷同時形成覆蓋該通孔之 :端側的導電圖案與第2標記。因此，藉由檢測^標記與 弟2標記之間的位置關係，可計算出導電圖案之相對於通孔 的形成位置。藉此，當導電圖案相對^通孔產生位置偏離 ，情形時，可基於第i標記與第2標記之間的位置關係校正 該位置之偏離，並且於陶£原材料上形成導電圖案，或將 已形成有導電圖案之陶究原材料進行疊層。又，當導電圖 案之相對於通孔之位置偏離大於特定值而無法校正時，可 判定該陶甍原材料為不良品並即刻將其篩除以避免以後流 91940.doc -11 - 入下一步驟。如此，藉由 於通孔的位置_产^ &導電圖案之相對 與另一端面側之間確實形成電氣輯接於陶堯層之一端面側 件係表示包含藉由_料而形成 電容哭、雷有積層型壓電元件、壓電感測器、 m電感·益，、變壓器、、以及遽波器 形成之元件等。 乂及將此寻不旻合 (發明效果） 材=說明，藉由本發明，可製造出介以通孔使陶竟原 的陶^元件^側與另—端面侧之間確實形成電氣性連接 【實施方式] 以下佐以圖式詳細說明本發明之適宜的實施形態。 、'先“?、圖1及圖2 ’說明藉由本發明之實施形態所製 造的積層型壓電元件1(陶竟元件）。 •圖斤不積層型壓電元件i係由形成有單體電極2之壓 屯體層(▲陶兗層）3與形成有共通電極4之壓電體層（陶竟層0 片又互資層，並由形成有端子電極之壓電體層7與作為 基底之壓電體層9自上T夾持而構成。 另外各壓電板3、5、7、9係以鍅鈦酸斜為主要成分， 形成為10 mmx30 mm，厚度為3〇㈣」之長方形薄板狀。 又單體包極2以及共通電極4係以銀及鈀為主要成分，藉 由網版印刷形成圖案者。此點對下述之各電極亦然。 於各壓電體層3之上面，多數個單體電極2配置為矩陣 91940.doc -12- 200428684 狀各單體電極2藉由互相設定特定間隔，以達成電氣性之 獨立，並且防止由於相互振動產生之影響。繼而，各單體 電極2於其外方側端部之正下方連接至形成於壓電體層3上 的通孔13内之導電構件（除最下方之壓電體層3以外）。 更且，於壓電體層3之上面的邊緣部，形成有用以將位於 上下方之壓電體層5的共通電極4、4進行電氣性連接之 電極6。此中繼電極6於其正下方連接至形成於壓電體们 上之通孔8内的導電構件。 曰 廿！电體厚5之上面工，於積增型壓電元件丨之 二與壓電體層3之各單體電極2的外方側端部 成有中繼電極16 (以下，將「積層型壓電元件 声予度二向」即「壓電體層3、5之厚度方向」簡稱為「厚 :向」。各中繼電極16於其正下方連接至形 層5上之通孔13内的導電構件。 私體 4。更二、於：電體層5之上面，形成有長方形狀之共通電極 芦電二通電極4自厚度方向所見係形成為鋪滿狀，以二 壓電體層3中的夂留舰^ ^ 以使與 疊。另外，極2之外方側端部以外的部分相重 5上之通孔8内的導，盖杜 帛至开7成於壓電體層 6方向相對。 構件，以使其_體層3之中繼電極 與電體層5二厂體層7的上面’於厚度方向上形 度方向上二有:厂繼電極16方向相對的外部電㈣’ 電極18。繼而，各= S>13之中®電極6方向相對的 各外部電極Π於其正下方連接至形成 91940.doc -13- 200428684 電體層7上之通孔13内的導電構件，·外部電極i8於龙 連接至形成於㈣體層7上之通孔8内的導電構件。、又 最下層之麼電體層9之上面，以自遷電體層9之外周部：定 特定間隔之方式，形成有長方形薄板狀之共通電極19Γ 另外，最上層之各外部電極17、18為安與 源進行電氣性連接之導線而使用銀之燒痕電極，作為積声 型壓電兀件1之端子電極而產生作用。 _ 藉由將形成有如上之電極圖案之遷電體層3、5、7 行疊層，相對於最上層之各外部電極17，於厚度方向上四 個:體電極2介在於中繼電極16間順序排列，經順序排列之 各电極2、16、17藉由通孔"内之導電構件形成電氣性 接。=而言’如圖2所示，於厚度方向上相鄰之單體電極 在於中繼電極16間，藉由通孔_之導電 成電氣性連接。 另一方面，相對於最上層之外部電極Μ，於厚度方向上 四個共通電極4與最下層之共通電極19介在於中繼電極6門 順序排列，經順序排列之各電極4、6、18、19藉由通孔曰8 内之導電構件14形成電氣性連接。 藉由如此之積層型壓電元件1中的電氣性連接，若於特定 之外4私極17與外部電極18之間施加電壓時，順序排列於 特定外部電極17下的單冑電極2與共通電極4、19之間將會 ^加包壓。藉此，於壓電體層3、5中，如圖2所示，於單體 电極2之外方側端部以外的部分與以共通電極4、μ所夾之 #分中產生電場，該部分作為活性部21產生移位。因此， 91940.doc -14- 200428684 可藉由選擇施加電壓之外部電極17，於對應於配置為矩陣 狀之單體電極2的活性部21中，使順序排列於所選擇之外部 電極17下的活性部21移位至厚度方向。如此之積層型堡電 元件1適用於微型泵之閥控料f要微小移位的各種褒: 之驅動源。 (弟1實施形態） 接著，參照圖3至圖7作為本發明第丨實施形態之陶兗元件 的製造方法，說明上述積層型壓電元件丨的製造方法。 首先，如圖3所示，向以鍅鈦酸鉛為主要成分之壓電材料 中混合有機黏合劑、有機溶劑等製作糊膠，將此糊膠保存 於罐槽31内。繼而，於將載膜（保持構件）32自捲軸33向另外 之捲軸33捲取之間，藉由刮板法於載膜32之上面形成成為 壓電體層3、5、7、9之未加工陶板（陶瓷原材料層）34 (陶瓷 板成形步驟）。另外，作為載膜32係使用厚度為 54 μηι、寬 度為100 mm之透明PET薄膜。又，形成於載膜32之上面的 未加工陶板34之厚度為40 jum。 陶兗板成形步驟之後，如圖4所示，將形成有未加工陶板 34之載膜32自捲軸33向另外之捲轴33捲取之間，使用加熱 爐36將載膜32及未加工陶板34同時加熱，使彼等強制收縮 (熱處理步驟）。藉此，可防止下一步驟以後之載膜32及未加 工陶板34之熱收縮，並且可位置精度準確地進行通孔之形 成及電極圖案之形成。 熱處理步驟之後，如圖5所示，將形成有未加工陶板34 之載膜32自捲軸33向另外之捲軸33捲取，並且使用衝孔裝 91940.doc -15- 200428684 置37形成位置基準穴，以此位置基準穴為基準於未加工陶 板34之特定位置，使用雷射加工裝置38形成通孔8、ι3(未 圖示）（通孔形成步驟）。另外，位置基準穴可形成於於之後 的切fe/f步驟中成為廢料之未加工陶板的外緣部，或當載膜 32之外緣部存在有未形成未加工陶板34的空白部時，可形 成於該空白部處。 通孔形成步驟之後，如圖6所示，使用網版印刷裝置％ 向通孔8、13内自未加工陶板34之上面側進行導電糊膠（糊 膠狀之導電材料）的充填網版印刷（第丨印刷步驟繼而，為 於通孔8、13内使導電糊膠乾燥·固化而形成導電構件丨斗， 將載膜32及未加工陶板34置於乾燥機中（第1乾燥步驟），但 於此第1乾燥步驟之前，以低於該乾燥溫度之溫度將載膜Μ 及未加工陶板34加熱特定時間（加熱步驟）。藉由此加熱使導 電糊膠軟化，並使導電糊膠確實遍佈通孔8、13内直至其下 端部。 八 第1乾燥步驟之後，向未加工陶板34上面之特定位置進行 導電糊膠之網版印刷（第2印刷步驟）。繼而，㈣膜Μ及未 加工陶板34置於乾燥機中，使導電糊膠乾燥固化而形成各 電極^^等⑷乾燥步驟卜另外’於第⑽^ 刷步驟巾所使用之導電㈣係向包含特定㈣之銀與把的 金屬材料中混合有機黏合劑、有機溶劑等製作而成。 第2乾燥步驟之後，如圖7所示，使用拾取裝置41將特定 長度之未加工陶板3钝自載膜32剝離，將未加工陶板34一 層使其與上述之積層型壓電元件Μ疊層順序相同，並進: 91940.doc -16_ 200428684 假壓接（疊層步驟）。 疊層步驟之後，藉由加熱並且向疊層方向進行擠壓，將 各未加工陶板34a進行熱壓接，製作積層體未加工陶板（擠 壓步驟）。繼而，自此積層體未加工陶板切出複數片特定尺 寸之積層體未加玉陶板元件，將所切出之積層體未加工陶 板元件進行脫脂·燒成之後，經過端子電極之形成分極處理 等完成積層型壓電元件1(完成步驟）。 其次進一步詳細說明本實施形態之熱處理步驟。 於此熱處理步驟中，較好為以9(rc以上15〇艺以下之溫度 使載膜32及未加工陶板34作熱收縮。而且，自熱收 及製造成本之觀點來看，熱處理時間較好為2分鐘〜5分鐘。 此處，熱收縮時較好為90。〇以上之溫度的理由如下。即， 於上述第1及第2乾燥步驟中以高於5〇t：(較好為7〇。〇以上） 低於90t：之範圍㈣乾燥溫度進行導電_之乾燥.固化。 因此，若以9(TC以上之溫度使載膜32及未加工陶板34作埶 收縮’可大致消除乾燥步驟中之載膜32及未加工陶板34之 熱收縮’可防止於該兹檢牛_ 士 茨乾岛步驟中產生通孔8、13之形狀畸 變、或相對於位置某進々#π。 罝丞旱八之通孔8、13的位置產生偏移之情 形。 另一方面，熱收縮時較好為15代以下之溫度的理由如 下。即’若以高於15吖之溫度進行加熱，則載膜32有可能 產生較大變形或熔融。又去 又，未加工陶板34之黏合劑成分 可能變質。 如此’藉由m成形步驟與通孔形成步驟之間設有熱 91940.doc -17« 200428684 處理步驟’於通孔形成步驟以後之步驟中，即使加熱載膜 32及未加工陶板34,亦可幾乎消除載膜32及未加工陶板μ 之進一步熱收縮。 藉此，可防止由衝孔裝置37所形成之位置基準穴畸變， 或其形成位置產生偏移之情形，因此可以此位置基準穴為 基準，於未加工陶板34之特定位置高精度形成通孔8、Η。 Ife而’可高精度向通孔8、13内之導電糊膠進行充填網版印 刷、向未加工陶板34之上面特定位置進行導電糊膠之網版 印刷、以及進行疊層步驟中各未加工陶板34a之疊層。另 外，將位置基準穴設於未形成有未加卫陶板34之載膜^的 空白部冑，若未設有熱處理步驟則可能產生較大位置偏 移，故而此時設置熱處理步驟特別有效。 繼而，於「10mmx30mm，厚度為3〇_」之壓電體層3 之上面，製作形成有三百個（4列75行）單體電極2的積層型壓 电元件1柃，經實施熱處理步驟與未經實施熱處理步驟之情 形下，分別測定積層型壓電元件丨中各壓電體層3、5之相對 4：層偏移。結果，未經實施熱處理步驟之情形下疊層偏移 為50 /im〜1〇〇 μηι，而經實施熱處理步驟之情形下疊層偏移 為20 /xm以下。 又，如上所述，由於於通孔形成步驟之後的步驟中幾乎 未產生載膜32及未加工陶板34之熱收縮，因此可防止由雷 射加工裝置38所形成之通孔8、13的形狀畸變。藉此，可於 通孔8、1 3内確實形成導電構件丨4。 由以上事項表明，根據本實施形態之陶瓷元件的製造方 91940.doc -18- 200428684 法，藉由於陶瓷板成形步驟與通孔形成步驟之間設置熱處 理步驟，可製造介以通孔8、13確實使壓電體層3、5之上面 側與下面側之間形成電氣性連接之積層型壓電元件1。 (第2實施形態） 接著’參照圖8至圖10，作為本發明第2實施形態之陶瓷 元件的製造方法，說明上述積層型壓電元件1之製造方法。 於本實施形態中，與上述第丨實施形態相同，係經過陶瓷 板形成步驟、熱處理步驟、通孔形成步驟、第1印刷步驟、 加熱步驟、第1乾燥步驟、第2印刷步驟、第2乾燥步驟、疊 層步驟、壓製步驟以及完成步驟而製造積層型壓電元件1。 其次’更加詳細說明本實施形態中之通孔形成步驟。 如圖8所示，於通孔形成步驟中，形成有未加工陶板34 之載膜32係真空吸附於配置於捲軸33、33之間的載物台43 上。若於載物台43上吸附固定有載膜32及未加工陶板34， 則可藉由雷射加工裝置38使雷射光L之集光點P位於未加工 陶板34之特定位置，雷射光L自未加工陶板34之上面側照 射。 此日守’相對於未加工陶板34之集光點p的位置係以Ccd攝 像機（攝像機構）攝像由衝孔裝置37所形成之複數個位置基 準八（位置基準部），基於該圖像資料將其定位於相對於位置 基準穴之特定位置。 又’雷射光L係Nd :使YAG雷射之第3次高諧波產生脈衝 振盈之笛射光，以30 kHz之頻率、210 nsec之脈寬以及平均 輸出為5 W之條件進行照射。繼而依據未加工陶板34之厚度 91940.doc -19- 200428684 或組成等，設定照射於未加工陶板34之特定位置的發射次 數(即，藉由Q切換產生振i之情形下雷射之重複照射次 數）’以使於未加工陶板34上形成通孔13，並且藉由溶融等 形成於載膜32之孔穴為特定深度以下。於本實施形態中， 係對於厚度為40㈣且具有以下組成之未加工陶板34，該电 成係以（Pb 0.97 Sr 0·03)[Τι 0.465 Zr 〇 535]〇3為主要成分且 向1莫耳主要成分添加〇·5質量％的作為副成分之勘办，設 定發射次數為30次而進行雷射光[之照射。 藉由如此雷射光L之照射，如圖9所示，未加工陶板34上 之雷射光L的照射部位熔融.蒸發而形成有通孔13，通孔η 週邊幾乎未有飛散物之堆積。因此，可防止飛散物造成之 通孔13的堵塞’故而可藉由向通孔13内進行導電糊膠之充 填網版印刷，於通孔13内確實形成導電構件14。 ^ ’通常若藉& t射光照射形成通孔，則通孔之形狀會 於雷射光人射面側成為底部擴大之圓錐狀，然而雷射光L 藉由例如Q切換使其脈衝„，藉此可抑制通孔擴大為圓錐 狀。本實施形態中’以規定通孔13之下面侧的直徑為 而上面侧之直徑為大約5〇㈣之方式，可抑制於通孔η之上 面側的擴大。 、猎此，可使形成於上面之用以包含該通孔13的單體電極2 成為更加細小之形狀’並可實現單體電極2之高集成化或積 層型壓電元件R小型化。此外，自未加工陶板“之上面側 充填至通孔13内的導電糊膠較易流動至下面側，可使導電 糊膠確實遍佈通孔13内直至其下端部。 91940.doc -20 - 200428684 又，藉由如上所述設定發射次數而進行雷射光^之照射， 士圖9所示，可防止載膜32之損傷。於本實施形態中，可將 載膜32之損傷深度控制於18 μηι以下。 藉此可防止通孔13内所充填之導電糊膠自未加工陶板W 與載膜32之間滲出至未加工陶板34的下面。並且，載膜 之損傷極小，因此於通孔形成步驟以後的其他步驟中，可 將載膜32確實進行真空吸附，又藉由此真空吸附可防止載 膜32破損、開孔之事態。 繼而，於「l〇mmx30mm，厚度為⑽从㈤」之壓電體層3 的上面，製作形成有三百個（4列75行）單體電極2之積層型壓 電兀件1，計算其良率，可得出以下結果。即，藉由雷射光 妝射，於載膜32上形成貫通孔之情形下的良率為未滿 20/〇，載膜32之損傷深度為18〜48 μιη之情形下的良率為 50%左右。於此相對，載膜32之損傷深度為〇〜18 之情 形下的良率超過90%。另外，以一百四十個積層型壓電元 件1作為試驗對象，僅將與單體電極2對應之三百處靜電電 容均得以正常獲得的情形作為良品而計算良率。 其次，說明上述通孔形成步驟中之雷射光照射與其他雷 射光照射的比較結果。 如圖10所示，C〇2雷射（波長10·6 μιη)之情形下，因雷射 光照射而產生之飛散物大量堆積於通孔週邊。又，使YAG 雷射之基本波（波長1064 nm)連續（CW)振盪時，通孔於雷射 光入射面側大幅擴大。更且，使YAG雷射之基本波（波長 1064 nm)藉由例如q切換產生脈衝振盪時，熱影響較大，通 91940.doc -21 - 200428684 孔之直徑控制極其困難，又加工堆積物亦較多。 相對於此等.，使YAG雷射之第3次高諧波（波長355 nm)藉 由Q切換產生脈衝振盪時（本實施形態），通孔週邊幾乎未有 能政物之堆積，通孔於雷射光入射面側之擴大亦得以抑 制又，使YAG雷射之第2次高諧波（波長532 nm)藉由Q切 換產生脈衝振盪時，亦獲得與使YAG雷射之第3次高諧波藉 由Q切換產生脈衝振I時同樣之效果。基於以上比較結果可 付出以下結論：該雷射光較好為自YAG雷射產生振璗之雷 射光並且係其波長轉換為5 3 2 nm以下波長之雷射光。 过ϋ兒月根據本實施形態之陶甍元件的製造方法， 可於通孔形成步驟中於未加工陶板34上形成良好之通孔 8、13，因此可於通孔8、13内確實形成導電構件14。藉此， 例如於各壓電體層3中，可藉由通孔13内之導電構件Μ將上 面側之單體電極2與下面側之中繼電極16確實連接。又，於 各壓電體層5中，可藉由通孔8内之導電構件14將上面側之 共通電極4與下面側之單體電極2確實連接。因此，可製造 ^介以通孔8、13於壓電體層3、5之上面側與下面側之間確 貫形成電氣性連接的積層型壓電元件1。 (第3實施形態） 一其次，參照圖U至圖15，作為本發明第3實施形態之陶竟 兀件的製造方法，說明上述積層型壓電元件丨的製造方法。 於本貝％形怨中，於上述第丨實施形態相同係經過陶瓷板 形成步驟、熱處理步驟、通孔形成步•驟、第❼刷步驟、加 熱步驟、第1乾燥步驟、第2印刷步驟、第2乾燥步驟、疊層 91940.doc -22- 200428684 步驟、壓製步驟以及完成步驟而製造積層型壓電元件1q 其次’更加詳細說明本實施形態中第1印刷步驟、加熱步 驟以及第1乾燥步驟。 如圖11所示，於第1印刷步驟中，於未加工陶板34之上面 34a上’形成有包含通孔13之導電圖案63。若於第1印刷步 驟之後即刻將未加工陶板34放入乾燥爐52，則導電糊膠不 會自然下降至通孔13内之下端部而固化，可能成為造成之 後連接不良的原因。然而於本實施形態中，第…刷步驟與 第1乾燥步驟之間設有加熱步驟，因此可防止產生如此之連 接不良。 即，於加熱步驟中’未加工陶板34置於加熱爐51中，以 低於乾燥溫度之加熱溫度進行加熱，由於形成導電圖案〇 之導電糊膠軟化，故而可使導電糊膠確實遍佈通孔Η内直 至其下端部。 紐而，於第1乾燥步驟中，未加工陶板34置於乾燥爐 中，以乾燥溫度進行加熱，由於導電糊膠乾燥·固化，因此 如圖12所示，可使自通孔13上端一直連接至下端之導電構 件14確實形成於通孔13内。 如此，可將能夠確實實現未加工陶板34之±面3^側盘下 面34b侧之間的電氣性連接之導電構件14形成於通孔8、η 内’因此根據本實施形態之陶瓷元件的製造方法，可製造 介以通孔8、13確實形成M電體層3、5之上面側與下面側之 間的電氣性連接之積層型壓電元件j。 ”上述加熱步驟中，好為將加熱溫度設定為 91940.doc -23- 200428684 〜刻圍之溫度，將加熱時間設定為i分鐘以上之時間。 ±㈣1乾燥步驟中之乾燥溫度為高於5 赃以上）且低於9〇t範圍内之溫度。 子為 於此處，較好為將加熱溫度設定為抑〜耽 度的理由參考圖13即可明瞭。圖】3係表示製作於「二 mmx30 mm，厚度為3〇 _」之壓電體層3的上面形成 百個（4列75行）單體電極2之積層型麼電元件200428684 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a ceramic element such as a multilayer piezoelectric element, a multilayer piezoelectric actuator, or a rubidium inductor, and a manufacturing system thereof. It relates to a manufacturing method and a manufacturing system of a ceramic element that forms an electrical connection between one end surface side and the other end surface side of a ceramic layer through a through hole. [Previous technology] In recent years, the technology development of multilayer piezoelectric elements, which is one of the ceramic elements, is being actively promoted. For example, Japanese Laid-Open Patent Publication No. 2002-254634 discloses such a multilayer piezoelectric element. The laminated piezoelectric element disclosed in the patent document alternately stacks a piezoelectric body layer patterned with a plurality of individual electrodes and a piezoelectric body layer formed with a common electrode pattern, and is arranged in the thickness direction of the laminated piezoelectric element. The body electrode is connected through a through hole formed in the piezoelectric body layer to guide the f member. In such a multilayer μ electrical element, a specific monomer can be electrically charged and a voltage can be applied between the common electrode and the piezoelectric body layer so as to correspond to the active part of the fixed monomer electrode (by the piezoelectric The effect is mutated and shifted selectively.) [Summary of the Invention] (Questions to be Solved by the Invention) In the above-mentioned ceramics led by a multilayer piezoelectric element, the component _ :: body: miniaturization And the high integration of the electrodes and other elements formed on the element: Technology that achieves consistent electrical connection. 91919.doc Therefore, the present invention is completed in view of # ^, net N shape, the purpose of which is to connect with one of the ceramic layers through holes ^ ^ ^ between the other side The "method and manufacturing system" for the ceramic elements ^ ^ (means for solving problems) that are truly rolled together. In order to achieve the above-mentioned object, the first research component of the present invention is manufactured to form a through hole in a ceramic layer. " Workers who form an electrical connection between one side and the other side of the machine, only the camera will be equipped with the following steps: a ceramic material layer is formed on the surface of the holding member The steps of holding the component and the ceramic material at the same time as the heat shrinking process ... the step of forming the through hole on the ceramic material layer. In this first manufacturing method of the ceramic component, the holding component After the ceramic is formed on the surface as a raw material layer, and before the through hole is formed on the ceramic material layer, the holding member and the ceramic material layer are thermally contracted. In this way, it can be maintained in the step after the through hole is formed even by heating. Component and pottery _ bright layer, keep The ceramic layer and ceramic layer hardly cause further thermal shrinkage. Therefore, it is possible to prevent distortion of the shape of the through hole and deviation of the formation position of the through hole. The electrical connection between one end face side and the other end face side of the ceramic layer It is possible to complete 0 through the through hole. In this first ceramic element manufacturing method, there are a step of printing a paste-like conductive material on the ceramic raw material layer after forming the through hole, and printing on the ceramic raw material layer. The step of drying the conductive material at a specific drying temperature 'in the heat shrinking step' preferably causes the holding member and the ceramic raw material layer to heat shrink at a temperature higher than the drying temperature. In this way, if the specific drying is performed when the conductive material is dried, The temperature is high, so that the heat retention of the holding member and the ceramic material 91940.doc -8- 200428684 can prevent distortion of the shape of the through hole when the conductive material is dried, or the position of the through hole is not shifted. In addition, the method for manufacturing the second Taurman element of the present invention is to form a through hole formed in the Taurman layer on the ceramic layer to form an electrical property between the end surface side and the other surface side. The connector is characterized by having a second-order harmonic or a third-order lower harmonic wave of YAG laser irradiated on a ceramic material containing a lead-containing compound and forming a ceramic layer, thereby forming a through hole in the ceramic material The inventors have discovered that by irradiating ceramic raw materials containing lead-containing compounds (lead titanate or lead: lead acid, etc.) with the second harmonic wave or the third harmonic wave of the YAG laser, , Can form a good through hole as follows. 1 Especially when the laser light is irradiated with CO and laser, a large amount of scattered matter is accumulated around the through hole, and the second harmonic or third harmonic of the YAG laser is performed. When the laser light of the second high harmonic L is irradiated, the pile of scattered objects can be almost eliminated around the through hole, thereby preventing the blocking of the through hole caused by the scattered material. Therefore, for example, the conductive paste can be filled into the through hole. Plate printing to form conductive members in the through holes. HUb, the electrical connection between the end face side and the other end face side of the ceramic layer can be surely completed through a through hole. In the manufacturing method of the second ceramic element, it is preferable that the laser light is pulsed by, for example, Q switching. Generally, when a through hole is formed by laser light irradiation, if it is not pulsed by, for example, Q switching, the shape of the through hole that is difficult to manage and process becomes a conical shape with an enlarged bottom on the side of the laser light incident surface, and the scattered matter generated by processing It does not scatter, but becomes the accumulation of machining chips around the through hole. However, the laser light can be oscillated by pulse switching such as Q to easily obtain a large peak output, and the shape of the through hole can be suppressed. 91940.doc -9-Expanded into a conical or scattered material accumulation And :: Through: This method forms an electrode pattern on the -end face ^ The relative size of the through hole of the through hole electrode is reduced; passing 'can make the electrode highly integrated or ceramic ^ 7 extremely small relative to this Miniaturization, 7 especially 70 pieces. The manufacturing method of the third ceramic element of this month is that the through hole on the Wan layer is formed on one of the end faces of the ceramic layer and the other end is formed on the ceramic electrical connector. It is characterized by being a ceramic research c: The conductive material is printed on the cover to form a step of drying at a drying temperature of two ===, and between the force, the step, and the step of drying the conductive material, the conductive material is printed at a heating temperature lower than the dry one. Addition of ceramic materials :::: ㈣ In the manufacturing method of the element, the dry welding of the conductive material's printed shape is completely dry. A kt bamboo edge ♦ Electrical materials are buried by heating at a low temperature. ㈣The raw materials are heated. ': The conductive material printed on the ceramic raw material will soften, because ~ ;. J surrounds the through hole. This effect is at a heating temperature of 25. . + Material: It is more significant when the dish is wide. Then, after this heating, by making the conduction = 枓 dry, a conductive ㈣ from the end of the through hole to the other ㈣ can be surely formed in the through hole. Therefore, according to the manufacturing method of this Taunman element, the electrical connection can be made through the through hole. It is 91940.doc -10- 200428684 between the one end face side and the other end face side of the layer. The method of manufacturing the 4th ceramic element is to pass through holes formed in the ceramic layer. —The end face side and the other—the end face side are gas-tight connections, and are characterized by having the following steps: The first mark is soil, and a through-hole is formed on the ceramic raw material that becomes the ceramic layer. + Step; a step of printing a conductive material to the ceramic material to form a second mark ... a conductive pattern at the -end side of the through hole; and a step of detecting the fi mark: the positional relationship between the two. " " The manufacturing system of 170 pieces of ceramics this month is based on the through holes formed in the ceramic layer, and the electrical connection is formed between the end surface side and the other end surface layer of the ceramic layer. Its characteristics It has the following mechanisms: a through-hole forming mechanism that uses the first mark as a position reference to form a ^ hole in the ceramic material that becomes the ceramic layer, and a printing mechanism that prints a conductive material to the ceramic material to form a brother 2 mark And a conductive pattern covering one end side of the through hole; and a detection mechanism that detects a positional relationship between the first mark and the second mark. Yu Di 4 Tao: In the manufacturing method and manufacturing system of a piece, a through hole is formed by using the first mark as a position reference, and the conductive pattern and the second mark covering the through hole are simultaneously formed by printing. Therefore, by detecting the positional relationship between the ^ mark and the 2 mark, the formation position of the conductive pattern with respect to the through hole can be calculated. Thereby, when the conductive pattern is misaligned with respect to the through hole, the position deviation can be corrected based on the positional relationship between the i-th mark and the second mark, and a conductive pattern is formed on the ceramic material, or Laminated ceramic materials with conductive patterns are laminated. In addition, when the positional deviation of the conductive pattern with respect to the through-hole is larger than a specific value and cannot be corrected, the raw material of the pottery can be judged as a defective product and immediately screened out to avoid future flow.91940.doc -11-Go to the next step . In this way, because the position of the through hole _ produced ^ & conductive pattern opposite and the other end surface side does form an electrical coupling to one of the Tao Yao layer end surface side parts means that the capacitor is formed by the material, Lightning has multilayer piezoelectric elements, piezo-inductive sensors, m inductors and transformers, and transformers, as well as components made of wave transformers. (This invention does not match (invention effect). Material = Description. By means of the present invention, it is possible to produce a ceramic ^ element ^ side and another end surface side through the through hole. Embodiment] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings. , "First" ?, Figs. 1 and 2 "Describes a multilayer piezoelectric element 1 (ceramic element) manufactured by an embodiment of the present invention. • A single-layer piezoelectric element i is formed by a single body. The body layer (▲ Tao layer) 3 of the electrode 2 and the piezoelectric body layer (the ceramic layer 0 and the mutual layer) on which the common electrode 4 is formed, and the piezoelectric body layer 7 on which the terminal electrode is formed and the pressure as the substrate The electrical body layer 9 is sandwiched from the upper T. In addition, each of the piezoelectric plates 3, 5, 7, and 9 is a rectangular thin plate of 10 mm x 30 mm and a thickness of 30 Å, with osmium titanate as the main component. The monolithic electrode 2 and the common electrode 4 are mainly composed of silver and palladium, and are patterned by screen printing. This is also true for each of the following electrodes. On each piezoelectric body layer 3, many The individual electrodes 2 are arranged in a matrix 91940.doc -12- 200428684. Each individual electrode 2 is set to a specific interval with each other to achieve electrical independence and prevent the influence due to mutual vibration. Then, each individual electrode 2 It is connected to the through hole 13 formed in the piezoelectric body layer 3 directly below the outer side end portion. A conductive member (except the lowermost piezoelectric layer 3). Furthermore, a common electrode 4, 4 is formed on the upper edge portion of the piezoelectric layer 3 to electrically connect the upper and lower piezoelectric layers 5 Electrode 6. This relay electrode 6 is connected directly below it to a conductive member formed in a through hole 8 formed on the piezoelectric body. Say 廿! The thickness of the electrical body is 5 and it is a cumulative piezoelectric element. Second, a relay electrode 16 is formed on the outer side end of each of the individual electrodes 2 of the piezoelectric body layer 3 (hereinafter, the "multi-layer piezoelectric element sound is bidirectional", that is, the "piezoelectric body layers 3 and 5" The "thickness direction" is abbreviated as "thickness: direction". Each relay electrode 16 is directly below it and connected to the conductive member in the through hole 13 on the shape layer 5. The private body 4. The second is on the top of the electrical body layer 5, The rectangular common electrode Alu electric two-electrode 4 is formed in a covered shape as seen from the thickness direction, and is stacked with a retention vessel ^ ^ in the piezoelectric body layer 3 so as to overlap. In addition, the outer side of the pole 2 Parts other than the ends are guided in the through hole 8 on the weight 5, and the lidu is 70% opposite to the piezoelectric layer 6. In order to make the relay electrode of the body layer 3 and the top of the body layer 7 of the second body layer 7 'in the thickness direction, the shape direction is two: the external electrode of the factory relay electrode 16 is opposite to the electrode 18. Then, each = S > 13 of the external electrodes facing in the direction of the electrode 6 are connected directly below it to the conductive member forming the through-hole 13 on the electrical layer 7, and the external electrode i8 is connected to the dragon To the conductive member formed in the through hole 8 on the carcass layer 7. On top of the electromechanical layer 9 which is the lowermost layer, the outer peripheral portion of the electromechanical layer 9 is formed at a certain interval to form a rectangular thin plate. Common electrode 19Γ In addition, the outer electrodes 17 and 18 on the uppermost layer are wires for electrically connecting the source and a silver burnt electrode is used as the terminal electrode of the acoustic product piezoelectric element 1. _ By stacking 3, 5, and 7 rows of the electromechanical layers formed with the above electrode pattern, four are in the thickness direction with respect to the uppermost external electrodes 17: the body electrode 2 is interposed between the relay electrodes 16 Sequentially arranged, the sequentially arranged electrodes 2, 16, 17 are electrically connected by the conductive members in the through holes. = In terms of ', as shown in FIG. 2, the individual electrodes adjacent to each other in the thickness direction lie between the relay electrodes 16, and are electrically connected by the conduction of the through hole. On the other hand, with respect to the outermost electrode M of the uppermost layer, the four common electrodes 4 and the lowermost common electrode 19 in the thickness direction are arranged in sequence through the relay electrode 6 gates, and the sequentially arranged electrodes 4, 6, 18 , 19 are electrically connected by the conductive member 14 in the through hole 8. With the electrical connection in the multilayer piezoelectric element 1 as described above, if a voltage is applied between the private electrode 17 and the external electrode 18 outside the specified one, the single electrodes 2 arranged in common under the specified external electrode 17 are in common with The electrodes 4 and 19 will be packed. As a result, as shown in FIG. 2, in the piezoelectric layers 3 and 5, an electric field is generated between the portion other than the end portion on the outer side of the unit electrode 2 and the # -point between the common electrode 4 and μ. A portion is displaced as the active portion 21. Therefore, 91940.doc -14- 200428684 can select the external electrode 17 to which the voltage is applied in the active portion 21 corresponding to the single-electrode 2 arranged in a matrix, so as to be sequentially arranged under the selected external electrode 17. The active portion 21 is displaced in the thickness direction. Such a multilayer electric element 1 is suitable for various types of driving sources where the valve control material f of the micro pump needs to be shifted slightly. (Embodiment 1) Next, a manufacturing method of the above-mentioned laminated piezoelectric element will be described with reference to Figs. 3 to 7 as a method of manufacturing a ceramic element according to a fifth embodiment of the present invention. First, as shown in FIG. 3, a paste is prepared by mixing an organic binder, an organic solvent, and the like into a piezoelectric material containing lead osmium titanate as a main component, and the paste is stored in a tank 31. Then, between the winding of the carrier film (holding member) 32 from the reel 33 to another reel 33, a raw method for forming piezoelectric layers 3, 5, 7, and 9 is formed on the carrier film 32 by a doctor blade method. Ceramic plate (ceramic raw material layer) 34 (ceramic plate forming step). As the carrier film 32, a transparent PET film having a thickness of 54 µm and a width of 100 mm was used. The thickness of the unprocessed ceramic plate 34 formed on the carrier film 32 was 40 jum. After the pottery slab forming step, as shown in FIG. 4, the carrier film 32 on which the unprocessed ceramic board 34 is formed is taken up from the reel 33 to another reel 33, and the carrier film 32 and the unprocessed ceramic board are heated using a heating furnace 36. 34 is heated at the same time to force them to contract (heat treatment step). Thereby, thermal shrinkage of the carrier film 32 and the unprocessed ceramic plate 34 after the next step can be prevented, and through-hole formation and electrode pattern formation can be accurately performed with positional accuracy. After the heat treatment step, as shown in FIG. 5, the carrier film 32 on which the unprocessed ceramic plate 34 is formed is taken up from the reel 33 to another reel 33, and the punching device 91940.doc -15- 200428684 is placed at 37 to form a position reference hole Based on this position reference hole at a specific position of the unprocessed ceramic plate 34, the laser processing device 38 is used to form the through holes 8, ι3 (not shown) (through hole forming step). In addition, the position reference hole may be formed at an outer edge portion of the raw ceramic plate that becomes waste in a subsequent cutting step, or when a blank portion where the raw ceramic plate 34 is not formed exists at the outer edge portion of the carrier film 32, It may be formed in the blank portion. After the through-hole forming step, as shown in FIG. 6, a screen printing device is used to fill the screen printing of conductive paste (a paste-like conductive material) from the upper side of the raw ceramic plate 34 into the through holes 8 and 13. (The first printing step is followed by drying and curing the conductive paste in the through holes 8, 13 to form a conductive member. The carrier film 32 and the unprocessed ceramic plate 34 are placed in a dryer (the first drying step). However, before this first drying step, the carrier film M and the raw ceramic plate 34 are heated at a temperature lower than the drying temperature for a specific time (heating step). By this heating, the conductive paste is softened and the conductive paste is surely made. It spreads through the through holes 8 and 13 to the lower end. After the first drying step, screen printing of conductive paste is carried out to a specific position on the raw ceramic plate 34 (second printing step). Then, the film M and the film The processed ceramic plate 34 is placed in a dryer, and the conductive paste is dried and solidified to form each electrode. ^^ The drying step is performed in addition to the conductive step used in the ^^ brushing step. Mixed organic materials in metal materials Mixture, organic solvent, etc. After the second drying step, as shown in FIG. 7, the unprocessed ceramic plate 3 of a specific length is bluntly peeled from the carrier film 32 using a pick-up device 41, and the unprocessed ceramic plate 34 is layered to the above. The laminated piezoelectric elements M have the same lamination sequence and proceed in the following order: 91940.doc -16_ 200428684 False crimping (lamination step). After the lamination step, each raw material is heated by extrusion in the direction of lamination. The ceramic plate 34a is thermocompression-bonded to produce a laminated raw ceramic plate (extrusion step). Then, from the laminated ceramic raw plate, a plurality of laminated bodies of a specific size are not added with a jade ceramic plate component, and the cut laminated body is cut. After the raw ceramic plate element is degreased and fired, the laminated piezoelectric element 1 is completed by a terminal electrode forming process (completion step). Next, the heat treatment step of this embodiment will be described in further detail. In this heat treatment step, it is preferable In order to heat shrink the carrier film 32 and the unprocessed ceramic plate 34 at a temperature of 9 ° C to 150 ° C. In addition, from the standpoint of heat recovery and manufacturing cost, the heat treatment time is longer than The reason is 2 minutes to 5 minutes. Here, the reason why the temperature is preferably 90 ° or more at the time of heat shrinkage is as follows. That is, in the first and second drying steps, the temperature is higher than 50 t: (preferably 7) Above 0.0t) The range below 90t: Drying temperature for conductive drying and curing. Therefore, if the carrier film 32 and the unprocessed ceramic plate 34 are shrunk at a temperature of 9 ° C or higher, the drying step can be substantially eliminated. The thermal shrinkage of the carrier film 32 and the unprocessed ceramic plate 34 in this step can prevent the shape distortion of the through holes 8 and 13 or the relative position # π in the step of detecting the cattle_Shizgan Island. 罝 丞The positions of the through holes 8, 13 of the dry eight may shift. On the other hand, the reason why the temperature is preferably 15 degrees or less during heat shrinkage is as follows. That is, if the heating is performed at a temperature higher than 15 ac, The film 32 may be greatly deformed or melted. Further, the adhesive composition of the raw ceramic plate 34 may deteriorate. In this way, “the heat is provided between the m-forming step and the through-hole forming step 91940.doc -17« 200428684 processing step '. In the steps after the through-hole forming step, even if the carrier film 32 and the raw ceramic plate 34 are heated, it is possible to The further thermal shrinkage of the carrier film 32 and the unprocessed ceramic plate μ is almost eliminated. Thereby, the position reference hole formed by the punching device 37 can be prevented from being distorted or the formation position thereof is shifted. Therefore, the position reference hole can be used as a reference to form a through hole at a specific position of the raw ceramic plate 34 with high accuracy. 8. Hey. Ife 'can be used for high-precision screen printing of conductive pastes in the through holes 8, 13; screen printing of conductive pastes to specific locations on the raw ceramic plate 34; and unprocessed parts in the lamination step. Laminated ceramic plate 34a. In addition, the position reference hole is set in a blank portion 胄 where the carrier film ^ of the unprotected ceramic plate 34 is not formed. If no heat treatment step is provided, a large positional deviation may occur, so the heat treatment step is particularly effective at this time. Next, on the piezoelectric body layer 3 of "10mmx30mm, thickness 30", a laminated piezoelectric element 1 柃 having three hundred (4 columns and 75 rows) single electrode 2 was fabricated, and after the heat treatment step and In the case where the heat treatment step is not performed, the relative 4: layer offset of each piezoelectric body layer 3, 5 in the multilayer piezoelectric element 丨 is measured separately. As a result, the lamination offset was 50 / im ~ 100 μm without the heat treatment step, and the lamination offset was 20 / xm or less when the heat treatment step was performed. As described above, since the heat shrinkage of the carrier film 32 and the unprocessed ceramic plate 34 is hardly generated in the steps subsequent to the through-hole forming step, the shapes of the through-holes 8 and 13 formed by the laser processing device 38 can be prevented. distortion. Thereby, a conductive member 4 can be surely formed in the through holes 8 and 13. From the above, it is clear that according to the method of manufacturing the ceramic element according to this embodiment 91940.doc -18- 200428684, since the heat treatment step is provided between the ceramic plate forming step and the through hole forming step, the through holes 8, 13 can be manufactured. A multilayer piezoelectric element 1 that securely forms an electrical connection between the upper and lower sides of the piezoelectric layers 3 and 5. (Second Embodiment) Next, referring to Fig. 8 to Fig. 10, as a method for producing a ceramic element according to a second embodiment of the present invention, a method for producing the multilayer piezoelectric element 1 will be described. In this embodiment, the same as the above-mentioned embodiment, the ceramic plate formation step, heat treatment step, through hole formation step, first printing step, heating step, first drying step, second printing step, and second drying are performed. Steps, lamination steps, pressing steps, and completion steps to manufacture a multilayer piezoelectric element 1. Next, the through-hole forming step in this embodiment will be described in more detail. As shown in FIG. 8, in the through-hole forming step, the carrier film 32 on which the raw ceramic plate 34 is formed is vacuum-adsorbed on the stage 43 disposed between the reels 33 and 33. If the carrier film 32 and the unprocessed ceramic plate 34 are adsorbed and fixed on the stage 43, the laser processing device 38 can be used to position the light collection point P of the laser light L at a specific position of the unprocessed ceramic plate 34. The upper surface of the raw ceramic plate 34 is irradiated. The position of the Nisshou 'relative to the light collecting point p of the unprocessed ceramic plate 34 is a Ccd camera (camera mechanism) that images a plurality of position reference eights (position reference parts) formed by the punching device 37, based on the image data Position it at a specific position relative to the position reference point. The laser light L is Nd: the third high harmonic wave of the YAG laser is pulsed. The flute light is irradiated at a frequency of 30 kHz, a pulse width of 210 nsec, and an average output of 5 W. Then, according to the thickness of the raw ceramic plate 34, 91940.doc -19- 200428684, or the composition, the number of shots irradiated to a specific position of the raw ceramic plate 34 (that is, the repeated irradiation of the laser in the case where the vibration i is generated by Q switching) is set. The number of times) is such that the through-holes 13 are formed in the raw ceramic plate 34 and the holes formed in the carrier film 32 by melting or the like are not more than a specific depth. In this embodiment, for the unprocessed ceramic plate 34 having a thickness of 40 ㈣ and having the following composition, the electrical system is mainly composed of (Pb 0.97 Sr 0 · 03) [Τι 0.465 Zr 〇535] 〇3 and 1 mol. The main component of the ear was added with 0.5% by mass as a subcomponent, and the number of shots was set to 30 times to perform laser light irradiation. As a result of the irradiation of the laser light L, as shown in FIG. 9, the irradiated portion of the laser light L on the raw ceramic plate 34 is melted and evaporated to form a through hole 13, and there is almost no accumulation of scattered matter around the through hole η. Therefore, clogging of the through-hole 13 caused by flying objects can be prevented. Therefore, the conductive member 14 can be surely formed in the through-hole 13 by filling screen printing of the conductive paste into the through-hole 13. ^ 'Usually if a through hole is formed by & t light irradiation, the shape of the through hole will become a conical shape with an enlarged bottom on the side of the laser light, but the laser light L is pulsed by, for example, Q switching. Enlargement of the through-hole into a conical shape can be suppressed. In this embodiment, 'the diameter of the lower surface side of the through-hole 13 is specified and the diameter of the upper surface side is approximately 50 Å, and the enlargement of the upper surface side of the through-hole η can be suppressed. With this, the single-electrode 2 formed on the top to contain the through-hole 13 can be made into a more fine shape, and the single-electrode 2 can be highly integrated or the multilayer piezoelectric element R can be miniaturized. The conductive paste filled from the upper side of the raw ceramic plate into the through hole 13 is easier to flow to the lower side, so that the conductive paste is surely spread throughout the through hole 13 to its lower end. 91940.doc -20-200428684 In addition, by setting the number of shots as described above, the laser light ^ is irradiated, as shown in Fig. 9, to prevent damage to the carrier film 32. In this embodiment, the damage depth of the carrier film 32 can be controlled to 18 μm or less. This can prevent the conductive paste filled in the through hole 13 from oozing out from between the unprocessed ceramic board W and the carrier film 32 to the underside of the unprocessed ceramic board 34. In addition, the damage of the carrier film is extremely small. Therefore, in other steps after the through-hole formation step, the carrier film 32 can be vacuum-adhered surely. The vacuum adsorption can prevent the carrier film 32 from being damaged or opening. Next, on the piezoelectric body layer 3 of "10 mm x 30 mm thickness", a laminated piezoelectric element 1 having three hundred (4 columns and 75 rows) single-electrode 2 was fabricated, and its goodness was calculated. Rate, the following results can be obtained. That is, with laser light makeup, when the through-hole is formed in the carrier film 32, the yield is less than 20/0, and when the damage depth of the carrier film 32 is 18 to 48 μm, the yield is 50%. about. In contrast, the yield of the carrier film 32 is greater than 90% when the damage depth is 0 to 18. In addition, forty-four laminated piezoelectric elements 1 were used as test objects, and yields were calculated only when the three hundred electrostatic capacitances corresponding to the single electrode 2 were normally obtained as good products. Next, the comparison results of the laser light irradiation and the other laser light irradiation in the through-hole forming step will be described. As shown in FIG. 10, in the case of a CO2 laser (wavelength of 10.6 μm), a large amount of scattered matter generated by laser light irradiation is accumulated around the through hole. When the fundamental wave (wavelength of 1064 nm) of the YAG laser is continuously (CW) oscillated, the through hole is greatly enlarged on the side where the laser light is incident. Furthermore, when the fundamental wave of YAG laser (wavelength 1064 nm) is generated by pulse switching such as q, the thermal influence is large. It is extremely difficult to control the diameter of the hole, and it is difficult to process the deposits. More. In contrast, when the third harmonic of the YAG laser (wavelength 355 nm) is pulsed by Q switching (this embodiment), there is almost no accumulation of energy and materials around the through hole, and the through hole The expansion of the laser light incident surface side is also suppressed. When the second harmonic of the YAG laser (wavelength 532 nm) is generated by the Q switching pulse oscillation, the third higher harmonic of the YAG laser is also obtained. Harmonic has the same effect when pulsed I is generated by Q switching. Based on the above comparison results, the following conclusions can be made: The laser light is preferably a laser light that generates a chattering light from a YAG laser and its wavelength is converted to a laser light with a wavelength below 5 3 2 nm. According to the method for manufacturing a ceramic element according to this embodiment, a good through hole 8, 13 can be formed on the raw ceramic plate 34 in the through hole forming step, so that conduction can be surely formed in the through hole 8, 13 Component 14. Thereby, for example, in each piezoelectric body layer 3, the single-electrode 2 on the upper side and the relay electrode 16 on the lower side can be surely connected by the conductive member M in the through hole 13. In each piezoelectric body layer 5, the common electrode 4 on the upper side and the unit electrode 2 on the lower side can be surely connected by the conductive member 14 in the through hole 8. Therefore, a multilayer piezoelectric element 1 can be manufactured in which electrical connections are consistently formed between the upper and lower sides of the piezoelectric layers 3 and 5 through the through holes 8, 13. (Third Embodiment) Next, referring to Figs. U to 15, as a method of manufacturing a ceramic competition member according to a third embodiment of the present invention, a method for manufacturing the above-mentioned laminated piezoelectric element will be described. In this case, the same as in the above-mentioned embodiment, the ceramic plate forming step, heat treatment step, through hole forming step, step, brushing step, heating step, first drying step, second printing step, Second drying step, laminated 91940.doc -22- 200428684 step, pressing step, and completion step to manufacture a multilayer piezoelectric element 1q Next, the first printing step, heating step, and first drying step in this embodiment will be described in more detail. . As shown in FIG. 11, in the first printing step, a conductive pattern 63 including a through hole 13 is formed on the upper surface 34a of the raw ceramic plate 34. As shown in FIG. If the raw ceramic plate 34 is put into the drying furnace 52 immediately after the first printing step, the conductive paste will not naturally fall to the lower end of the through hole 13 and solidify, which may cause the subsequent poor connection. However, in this embodiment, since a heating step is provided between the first brushing step and the first drying step, such a connection failure can be prevented. That is, in the heating step, the 'unprocessed ceramic plate 34 is placed in the heating furnace 51 and heated at a heating temperature lower than the drying temperature. Since the conductive paste forming the conductive pattern 0 is softened, the conductive paste can be surely spread through the holes. Η inside up to its lower end. In the first drying step, the raw ceramic plate 34 is placed in a drying furnace and heated at a drying temperature. Since the conductive paste is dried and solidified, as shown in FIG. 12, the upper end of the through hole 13 can be connected at all times. The conductive member 14 to the lower end is surely formed in the through hole 13. In this way, the conductive member 14 capable of reliably realizing the electrical connection between the ± face 3 of the unprocessed ceramic plate 34 and the side 34b of the side plate can be formed in the through holes 8 and η. Therefore, the manufacturing of the ceramic element according to this embodiment By the method, a multilayer piezoelectric element j in which the electrical connection between the upper and lower sides of the M electrical layers 3 and 5 is surely formed through the through holes 8 and 13 can be manufactured. "In the above heating step, it is better to set the heating temperature to 91940.doc -23- 200428684 ~ carving temperature, and set the heating time to more than i minutes. ± ㈣1 The drying temperature in the drying step is higher than 5 (Above) and the temperature is lower than 90 °. For this reason, it is better to set the heating temperature to ~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~~, it is clear about the reason why it is better to set the heating temperature to ~~~. It is shown in FIG. 3 that it is made in "two mmx30 mm, a thickness of 3〇_ ″ is formed on the piezoelectric body layer 3 of a laminated type of one hundred (4 columns and 75 rows) single electrode 2
間設定為兩分鐘厂囿中、％ W 、（口疋），改毚加熱溫度時之積層型壓電元件 1的良率之圖。由圖U可知：當加熱溫度為饥〜抓+ 内時，良率超過90。/，姑、π 国 隊u H旦超過5G°C其良率便會急速下 要原因可列舉為，當加熱溫度 膠於到達通孔u内下端部之前便已固化。 h构 :較好為將加熱時間設定為1分鐘以上之時間的理由， 茶恥圖14及圖15即可明瞭。圖14彳H Λ &、θ # 0 係表不將加熱溫度設定為 。定）’改變加熱時間時積層型壓電元件i (與圖^之 =相同，)之良率的圖；圖15係表示將加熱溫度設定為 □疋）改k加熱時間時積層型壓電元件1之良率的 圖。由圖14及圖15可4n . + ή… 了知.加熱時間為1分鐘以上之時間時， ^率超過9G%，然而未滿1分鐘時，良率則急劇下降。其主 、原因可列舉為，當加熱時間未滿1分鐘時，導電糊膠到達 二孔13内之下端部之前加熱步驟便已結束。另外，加熱時 Ζ長會造成作業效率降低，因此於本實施形態中，較好 (卜 疋馮1刀鐘〜3分鐘範圍之時間。 (弟4實施形態） 91940.doc -24- 200428684 其次，參照圖16至圖17,作為本發明第4實施形態之陶瓷 元件的製造方法及製造系統，說明上述積層型壓電元件工 的製造方法及製造系統。 於本實施形態中，與上述第1實施形態相同，係經過陶究 板形成步驟、熱處理步驟、通孔形成步驟、第丨印刷步驟、 加熱步驟、第1乾燥步驟、第2印刷步驟、第2乾燥步驟、疊 層步驟、壓製步驟以及完成步驟而製造積層型壓電元件i。 繼而，說明本實施形態之陶瓷元件的製造系統之運作， 並且說明通孔形成步驟、第1印刷步驟及第2印刷步驟。另 外，如圖17所示，製造系統60包含雷射加工裝置（通孔形成 機構）38、網版印刷裝置（印刷機構）39及位置關係檢測裝置 (檢測機構）61。 如圖16(a)所示，於通孔形成步驟中，藉由衝孔裝置”以 分別於未加工陶板34之一方外緣部形成兩個，於另一方外 緣部形成一個之方式而形成有三個位置基準穴（第1標 。己）45 、、fe而，形成通孔13時，藉由設置於各位置基準穴 上方之CCD攝像機46a (包含於雷射加工裝置38)，攝像各位 置基準穴45。依據此所攝像之圖像資料，移動載膜32 加工陶板34以形就位，於未加卫陶板34之料位置上形 成有通孔13。如此，於通孔形成步驟中，#由雷射加工裝 置38,以位置基準穴45為位置基準使通孔13形&於未加工 陶板34上。 另外，於圖16中，為使其更加明瞭化，僅表示一個通孔 η，然而實際上未加工陶板34上形成有多數個通孔8、13。 91940.doc -25- 200428684 又，如上所述，位置基準穴45之形成位置並非限定於於之 後的切斷步驟中成為廢材之未加工陶板34的外緣部，當載 膜32之外緣部上存在未形成有未加工陶板34的空白部時亦 可為該空白部。 繼而，如圖16 (b)所示，於第丨印刷步驟中，將導電糊膠 充填印刷於通孔13内時，係藉由設置於各位置基準穴扑上 方之CCD攝像機46b (包含於網版印刷裝置39)，攝像各位置 基準穴45。依據此所攝像之圖像資料，移動載膜32及未加 工陶板34以形成定位，於未加工陶板34之特定位置，以覆 蓋通孔13之一端侧之方式印刷有含有該通孔13之基底圖案 (導電圖案）47。此時，藉由相同製版，同時印刷有三個印刷 標記（第2標記）48。此印刷標記48於未加工陶板34之一方外 緣部形成一個，於另一方之外緣部形成兩個。 繼而，如圖16 (c)所示，於第2印刷步驟中，將成為單體 電極2等之電極圖案49進行印刷時，藉由設置於各位置基準 穴45及各印刷標記48之上方的CCD攝像機46c (包含於位置 關係檢測裝置61)，攝像各位置基準穴45及各印刷標記48。 而且，於位置關係檢測裝置61中，依據所攝像之圖像資料， 檢測出位置基準穴45與印刷標記48之於χ-γ座標系上的位 置關係。 藉由此位置關係之檢測，例如，若印刷標記48相對於位 置基準穴45於Y軸方向產生位置偏移時，則基底圖案47相對 於通孔13亦於Y軸方向產生位置偏移（參照圖16(〇))。即，可 藉由檢測位置基準穴45與印刷標記48之於χ-γ座標系上的 91940.doc -26- 200428684 位置關係，計算出基底圖案47之相對於通孔丨3的位置偏移。 藉此’當基底圖案47相對於通孔13產生位置偏移時，可 依據位置基準穴45與印刷標記48之間的位置關係移動載膜 32及未加工陶板34’以電極圖案49確實包含基底圖案”之 方式而形成未加工陶板34之定位。又，依據位置基準穴45 與印刷標記48之間的位置關係，反饋控制第丨印刷步驟中未 加工陶板34之定位，校正新基底圖案47之相對於未加工陶 板34的位置偏移。 另外，作為第2印刷步驟中之定位方法，並非僅限於使電 極圖案49與基底圖案47吻合。如，亦可使電極圖案49與通 孔13吻合，或亦可使電極圖案49與基底圖案47之相對於通 孔13的位置偏移之中間位置吻合。 如此，藉由檢測出位置基準穴45與印刷標記48之位置關 係，當基底圖案47相對於通孔13產生位置偏移時，於第2 印刷步驟中，可校正電極圖案49之相對於基底圖案〇的形 成位置；又，於第1印刷步驟中，藉由反饋控制，可校正基 底圖案47之相對於通孔13的形成位置。並且，當相對於通 孔13之基底圖案47的位置偏移大於特定值而不可使用時， 可判定形成有該基底圖案47之未加工陶板34為不良，並即 刻將其篩除以避免以後流入下一步驟。更且，於疊層步驟 中，依據位置基準穴45與印刷標記48之間的位置關係，可 將未加工陶板34a南精度疊層。 依據以上内容，根據本實施形態之陶瓷元件的製造方法 及製造系統’可提高相對於通孔13之基底圖案47以及電極 91940.doc -27- 200428684 200428684 圖案49等的位置精度 3、5之上面側與下面 壓電元件1。 可製造出介以通孔8、13於壓電體層 側之間確實形成電氣性連接的積層型 « Π77 「 錢本實施形態之陶变元件的製造方法，製作於 古1〇mmX3〇mm，厚度為30卿」之壓電體層3的上面形成 個（4列75行）單體電極2之積層型Μ電元件卜得到如 =果。即’與依據位置基準穴45與印刷標記料之間的位 =進:亍定位之情形相比，依據其中任一方進行定位之 ^科，通孔8、13中產生之連接Μ均增加观之多。又， 基準二45與印刷標記48之間的位置關係進行定位 以广二2電體層3、5之相對疊層偏移可控制為2° - 以下，而依據其中任一古、仓——， 仃疋位之情形時，各壓電體層 3、5之相對疊層偏移為平均5〇/^。 本卷月亚非僅限於上述實施形態。例如，作為 =只要係可檢測出其形成位置者，即可適用。因此 2示記並非僅限於上述實施形態中之貫通穴，亦可為溝狀 記等；第1標記之形成對象亦非僅限於未加工陶板 ’之陶瓷原材料，只要係載膜等之保持構件即可。 =標記之:卿並非限於上述實施形態中之圓形，：可 大或t子形等。另外，第1及第2標記之形狀為圓形之 二？ ’若分別形成兩個，可檢測出第!標記與第 的…置關係’然而如上述實施形態，上： 以上時，便可進一步提高位置關係之檢測精度。個 【圖式簡單說明】 91940.doc -28 - 200428684 圖1係藉由本發明之實施形態的陶瓷製造方法及製造系 統所製造之積層型壓電元件的分解立體圖。 圖2係自與圖丨所示之積層型壓電元件的長度方向直交之 方向所見的放大剖面圖。 圖3係表示本發明之第丨實施形態中之陶板成形步驟之楙 念圖。 圖4係表示本發明之第丨實施形態中之熱處理步驟之概念 圖。 圖5係表示本發明之第1實施形態中之通孔形成步驟之概 念圖。 圖6係表示本發明之第丨實施形態中之第丨印刷步驟、加熱 步驟以及第1乾燥步驟之概念圖。 圖7係表示本發明之第1實施形態中之疊層步驟之概念 圖。 圖8係表示本發明之第2實施形態中之通孔形成步驟中雷 射光照射時的狀態之概念圖。 圖9係表示本發明之第2實施形態中之通孔形成步驟中雷 射光照射後的狀態之概念圖。 圖係表示藉由雷射光照射之通孔形成狀態之比較結果 的圖。 圖11係表示本發明之第3實施形態中之第1印刷步驟實施 後之未加工陶板的剖面圖。 圖12係表示本發明之第3實施形態中之第1乾燥步驟實施 後的未加工陶板之剖面圖。 91940.doc -29 - 200428684 士圖13係表示本發明之第3實施形態的加熱步驟中，將加熱 盼間設為2分鐘（固定）使加熱溫度變化之情形下之積層型壓 電元件的良率之圖表。 、曰土 圖14係表不本發明之第3實施形態的加熱步驟中，將加熱 鐵度設為25QC (固定）使加熱時間變化之情形下之積層型壓 電元件的良率之圖表。 π圖15係表示本發明之第3實施形態的加熱步驟中，將加熱 /皿度δ又為5〇 c (固定）使加熱時間變化之情形下之積層型壓 電元件的良率之圖表。 =16係用以說明本發明之第4實施形態中之定位方法的 无〜圖（a)表不通孔形成步驟，（b)表示第1印刷步驟，（C) 表示第2印刷步驟。 圖丨7係表示本發明之第4實施形態的製造系統之構成的 方塊圖。 【圖式代表符號說明】 1 積層型壓電元件 2 單體電極 3 ^ 壓電體層 4 共通電極 5 ^ 壓電體層 6 . 中繼電極 7 壓電體層 8 通孔 9 ^ 壓電體層 91940.doc •30- 200428684 13 14 16 17 18 19 21 31 32 33 34 34a 34b 36 37 38 39 41 43 45 46a ， 46b ， 46c 47 48 49The time is set to two minutes in the factory,% W, (mouth), and the yield rate of the laminated piezoelectric element 1 when the heating temperature is changed. It can be seen from Figure U that when the heating temperature is within the range of hunger ~ scratch +, the yield exceeds 90. /, The national team u H will yield rapidly when the temperature exceeds 5G ° C. The main reason can be listed as follows: when the heating temperature glue reaches the lower end of the through hole u, it is cured. Structure h: The reason why the heating time is preferably set to 1 minute or longer, as shown in Figs. 14 and 15 for tea. Figure 14 彳 H Λ &, θ # 0 indicates that the heating temperature is set to. The figure of the yield rate of the multilayer piezoelectric element i (same as in Figure ^) when changing the heating time; Figure 15 shows the multilayer piezoelectric element when the heating time is changed to □ 疋Yield graph of 1. From Figure 14 and Figure 15, you can know 4n. + Priced ... When the heating time is more than 1 minute, the rate exceeds 9G%, but when it is less than 1 minute, the yield decreases sharply. The main reason is that when the heating time is less than 1 minute, the heating step is completed before the conductive paste reaches the lower end of the two holes 13. In addition, the length of time Z during heating will reduce the work efficiency, so in this embodiment, it is better (Bu Yifeng 1 knife clock ~ 3 minutes range. (Younger 4 implementation mode) 91940.doc -24- 200428684 Second, A manufacturing method and a manufacturing system of the above-mentioned multi-layer piezoelectric element will be described as a manufacturing method and a manufacturing system of a ceramic element according to a fourth embodiment of the present invention with reference to FIGS. 16 to 17. In this embodiment, it is the same as the first embodiment described above. The form is the same, after the ceramic plate forming step, heat treatment step, through hole forming step, printing step, heating step, first drying step, second printing step, second drying step, laminating step, pressing step and completion The multilayer piezoelectric element i is manufactured in steps. Next, the operation of the ceramic element manufacturing system of this embodiment will be described, and the through-hole forming step, the first printing step, and the second printing step will be described. In addition, as shown in FIG. The manufacturing system 60 includes a laser processing device (through-hole forming mechanism) 38, a screen printing device (printing mechanism) 39, and a position relationship detection device (detection mechanism) 61. As shown in FIG. 16 (a), in the through-hole forming step, three holes are formed on the outer edge portion of one of the raw ceramic plates 34 and one on the outer edge portion by the punching device. Position reference points (No. 1). When forming the through hole 13, the CCD camera 46a (included in the laser processing device 38) provided above each reference point is used to image each position reference. Hole 45. According to the image data captured here, the moving carrier film 32 is used to process the ceramic plate 34 in shape, and a through hole 13 is formed at the position of the unprotected ceramic plate 34. Thus, in the through hole forming step, # The laser processing device 38 uses the position reference hole 45 as a position reference to shape the through hole 13 on the raw ceramic plate 34. In addition, in order to make it clearer in FIG. 16, only one through hole η is shown, However, in fact, a plurality of through holes 8, 13 are formed in the raw ceramic plate 34. 91940.doc -25- 200428684 As described above, the formation position of the position reference hole 45 is not limited to the waste in the subsequent cutting step. The outer edge of the raw ceramic slab 34 is the outer edge of the carrier film 32 If there is a blank portion on which the raw ceramic plate 34 is not formed, the blank portion may also be the blank portion. Then, as shown in FIG. 16 (b), when the conductive paste is filled and printed in the through hole 13 in the first printing step Based on the CCD camera 46b (included in the screen printing device 39) provided above the reference holes at each position, the reference points 45 at each position are captured. Based on the image data captured here, the carrier film 32 and the unprocessed ceramic plate are moved. In order to form a positioning, a base pattern (conductive pattern) 47 containing the through hole 13 is printed at a specific position of the unprocessed ceramic plate 34 so as to cover one end side of the through hole 13. At this time, the same plate making is simultaneously printed There are three printed marks (2nd mark) 48. One of the printed marks 48 is formed on one outer edge portion of the unprocessed ceramic plate 34 and two are formed on the other outer edge portion. Then, as shown in FIG. 16 (c), in the second printing step, when the electrode pattern 49 which is to be a single electrode 2 or the like is printed, the electrode pattern 49 provided above each position reference hole 45 and each print mark 48 is printed. The CCD camera 46c (included in the position relationship detection device 61) captures each position reference hole 45 and each print mark 48. Furthermore, the positional relationship detecting device 61 detects the positional relationship between the position reference hole 45 and the printed mark 48 on the χ-γ coordinate system based on the image data captured. Based on the detection of this positional relationship, for example, if the position of the printed mark 48 with respect to the position reference hole 45 is shifted in the Y-axis direction, the base pattern 47 is also shifted in the Y-axis direction with respect to the through hole 13 (see Figure 16 (0)). That is, the positional deviation of the base pattern 47 with respect to the through hole 3 can be calculated by detecting the positional relationship between the reference hole 45 of the position and the position of the printed mark 48 on the χ-γ coordinate system 91940.doc -26- 200428684. This 'when the base pattern 47 is shifted relative to the through hole 13, the carrier film 32 and the raw ceramic plate 34 can be moved according to the positional relationship between the position reference hole 45 and the printed mark 48'. The electrode pattern 49 does include the base. Pattern "method to form the positioning of the raw ceramic plate 34. In addition, according to the positional relationship between the position reference hole 45 and the printing mark 48, the positioning of the raw ceramic plate 34 in the first printing step is controlled to correct the position of the new base pattern 47. The position is shifted relative to the raw ceramic plate 34. In addition, the positioning method in the second printing step is not limited to matching the electrode pattern 49 with the base pattern 47. For example, the electrode pattern 49 can be matched with the through hole 13, Alternatively, the intermediate position of the electrode pattern 49 and the base pattern 47 relative to the position of the through hole 13 can be matched. In this way, by detecting the positional relationship between the position reference hole 45 and the printed mark 48, when the base pattern 47 is relative to When the position of the through hole 13 is shifted, in the second printing step, the formation position of the electrode pattern 49 with respect to the base pattern 0 can be corrected; and in the first printing step, by The feedback control can correct the formation position of the base pattern 47 with respect to the through hole 13. And, when the positional offset with respect to the base pattern 47 of the through hole 13 is larger than a certain value and cannot be used, it can be determined that the base pattern 47 is formed The unprocessed ceramic plate 34 is defective, and it is immediately screened to prevent it from flowing into the next step. Moreover, in the laminating step, the unprocessed ceramic plate can be processed according to the positional relationship between the position reference hole 45 and the printed mark 48. The ceramic plate 34a is laminated with high accuracy. According to the above, the manufacturing method and manufacturing system of the ceramic element according to this embodiment can improve the base pattern 47 of the through hole 13 and the electrode 91940.doc -27- 200428684 200428684 pattern 49 and the like. Position accuracy 3, 5 on the upper side and the lower piezoelectric element 1. Laminated type «Π77" which can form an electrical connection between the piezoelectric layer side via the through holes 8 and 13 can be manufactured The manufacturing method of the device is made on the piezoelectric body layer 3 of 10 mm × 30 mm thick and 30 mm thick, and a multilayer M electrical element (4 columns and 75 rows) with a single electrode 2 is formed as follows: . That is, compared with the position of the reference hole 45 and the printing mark material according to the position = advance: 亍 positioning, according to any one of the positioning methods, the connection M generated in the through holes 8, 13 is increased. many. In addition, the positional relationship between the reference two 45 and the printed mark 48 is positioned so that the relative stacking offset of the electrical layers 3 and 5 of the second two can be controlled to 2 °-or less, and according to any of the ancient and warehouse- In the case of nipping, the relative lamination offset of each piezoelectric layer 3, 5 is 50 / ^ on average. In this volume, Asia and Africa are limited to the above embodiments. For example, it is applicable as long as the formation position can be detected. Therefore, the 2 mark is not limited to the through hole in the above embodiment, and it can also be a groove-shaped mark. The formation of the first mark is not limited to the ceramic raw materials of the unprocessed ceramic plate, as long as it is a holding member such as a carrier film. can. = Marked: Qing is not limited to the circle in the above embodiment, it can be large or t-shaped. In addition, the shape of the first and second marks is a circular two? 'If two are formed separately, the relationship between the! Mark and the ... position can be detected.' However, as in the above embodiment, the above: In the above case, the detection accuracy of the position relationship can be further improved. [Schematic description] 91940.doc -28-200428684 FIG. 1 is an exploded perspective view of a multilayer piezoelectric element manufactured by a ceramic manufacturing method and a manufacturing system according to an embodiment of the present invention. FIG. 2 is an enlarged sectional view seen from a direction orthogonal to the longitudinal direction of the multilayer piezoelectric element shown in FIG. Fig. 3 is a conceptual diagram showing a ceramic plate forming step in the first embodiment of the present invention. Fig. 4 is a conceptual diagram showing a heat treatment step in the first embodiment of the present invention. Fig. 5 is a conceptual diagram showing a through-hole forming step in the first embodiment of the present invention. Fig. 6 is a conceptual diagram showing a first printing step, a heating step, and a first drying step in the first embodiment of the present invention. Fig. 7 is a conceptual diagram showing a lamination step in the first embodiment of the present invention. Fig. 8 is a conceptual diagram showing a state when laser light is irradiated in the through-hole forming step in the second embodiment of the present invention. Fig. 9 is a conceptual diagram showing a state after the laser light is irradiated in the through-hole forming step in the second embodiment of the present invention. The figure shows a comparison result of the formation state of the through-holes irradiated with laser light. Fig. 11 is a cross-sectional view showing an unprocessed ceramic plate after the first printing step in the third embodiment of the present invention is performed. Fig. 12 is a cross-sectional view showing a raw ceramic plate after the first drying step in the third embodiment of the present invention is performed. 91940.doc -29-200428684 Shi FIG. 13 shows the good quality of the multilayer piezoelectric element when the heating interval is set to 2 minutes (fixed) and the heating temperature is changed in the heating step of the third embodiment of the present invention. Rate chart. Fig. 14 is a graph showing the yield of a laminated piezoelectric element in the case where the heating iron is set to 25 QC (fixed) and the heating time is changed in the heating step of the third embodiment of the present invention. Fig. 15 is a graph showing the yield of the laminated piezoelectric element in the heating step of the third embodiment of the present invention when the heating / plate degree δ is changed to 50 c (fixed) and the heating time is changed. = 16 is used to explain the positioning method in the fourth embodiment of the present invention. None of the figures (a) shows a through-hole forming step, (b) represents a first printing step, and (C) represents a second printing step. Fig. 7 is a block diagram showing a configuration of a manufacturing system according to a fourth embodiment of the present invention. [Illustration of representative symbols of the figure] 1 Multi-layer piezoelectric element 2 Single electrode 3 ^ Piezoelectric body layer 4 Common electrode 5 ^ Piezoelectric body layer 6. Relay electrode 7 Piezoelectric body layer 8 Through hole 9 ^ Piezoelectric body layer 91940.doc • 30- 200428684 13 14 16 17 18 19 21 31 32 33 34 34a 34b 36 37 38 39 41 43 45 46a, 46b, 46c 47 48 49
通孑L 導電構件 中繼電極 外部電極 外部電極 共通電極 活性部 罐槽 載膜 捲軸 未加工陶板 未加工陶板之上面 未加工陶板之下面 加熱爐 衝孔裝置 雷射加工裝置 網版印刷裝置 拾取裝置 載物台 位置基準穴 攝像機 基底圖案 印刷標記 電極圖案 91940.doc -31 - 200428684 51 加熱爐 52 乾燥爐 60 製造系統 61 位置關係檢測裝置 63 導電圖案 91940.doc - 32 -通 孑 L Conductive member Relay electrode External electrode External electrode Common electrode Active part Tank carrier film roll Unprocessed ceramic plate Unprocessed ceramic plate Above unprocessed ceramic plate Heating furnace punching device Laser processing device Screen printing device Pickup device Object position reference point camera base pattern printing mark electrode pattern 91940.doc -31-200428684 51 heating furnace 52 drying furnace 60 manufacturing system 61 position relationship detection device 63 conductive pattern 91940.doc-32-