1334662 玖、發明說明： 【發明所屬之技術領域】 本發明係關於積層型壓電元件、積層型壓電致動器或壓 電感測器等之陶瓷元件之製造方法及其製造系統，更詳言 之係關於介以通孔於陶竟層之一端面側與另一端面側之間 形成電氣性連接的陶瓷元件之製造方法及製造系統。 【先前技術】 近年，為陶竟元件之一的積層裂壓電元件的技術開發正 在積極推進。例如日本專利特開2002 — 254634號公報中揭 示有此種積層型壓電元件。 該專利文獻中揭示之積層型壓電元件係將圖案形成多數 個單體電極之壓電體層與形成共通電極圖案之壓電體層交 互®層’並將排列於積層型壓電元件之厚度方向上的各單 體電極介以形成於壓電體層之通孔以導電構件進行連接 者。於如此之積層型壓電元件中，可藉由向特定之單體電 極與共通電極之間施加電壓，於壓電體層上使對應於該特 定之單體電極的活性部（由於壓電效應產生畸變之部分）進 行選擇性移位。 【發明内容】 (發明所欲解決之課題） 於上述之以積層型壓電元件為首之陶瓷元件中，伴隨元 件自體之小型化及形成於元件上之電極等的高集成化，期 望有一介以通孔可於陶£層之一端面侧與另一端面側之間 確實實現電氣性連接的技術。 91940.doc 1334662 因此，本發明係ϋ於此等情形而完成者，其目的 供介以通孔於陶究層之一端面側與另一端面側之間確實形 成電虱性連接的陶曼元件之製造方法及製造系統。 (解決問題之手段） 、為達成上述目的’本發明之第1陶U件之製造方法係介 乂形成於陶瓷層上之通孔，於陶瓷層之一端面側與另—端 面側之間形成電氣性連接者，其特徵為具備以下步驟：於 保持構件之表面形成成為陶曼層的陶究原材料層之㈣、 使保持構件及陶究原材料層同時作熱收縮之步驟、以及於 熱收縮後之陶瓷原材料層上形成通孔的步驟。 於此第1陶究元件之製造方法中，於保持構件之表面形成 陶竞原材料層後，並於該陶£原材料層上形成通孔之前， 使保持構件及陶曼原材料層作熱㈣。藉此，可於形成通 孔之後的步財，即使加熱保持構件及㈣層，保持構件 及陶究層亦幾乎不會產生進-步熱收縮。因此可防止通孔 形狀畸變、通孔之形成位置產生偏移之情形，陶瓷層之一 端面側與另—端面侧之間的電氣性連接可介以通孔確實完 成。 又於此第1陶瓷元件之製造方法中，具備形成通孔後向 陶曼原材料層印刷糊膠狀之導電材料之步驟，以及將印刷 於陶£原材料層之導電材料以特定的乾燥溫度進行乾燥之 步驟，於熱收縮步驟中，較好為以高於乾燥溫度的溫度使 保持構件及陶究原材料層作熱收縮。如此若以較導電材料 乾燥時之特定乾燥溫度為高的溫度，使保持構件及陶瓷原 91940.doc 1334662 材料層作熱收縮時，可防止於乾燥導電材料之時通孔形狀 產生畸變，或通孔之形成位置產生偏移之情形。 更且，本發明之第2陶究元件之製造方法係介以形成㈣ 究層上之通孔於陶究層之一端面側與另—端面側之間形成 電乳性連接者，其特徵為具備向含有含敍化合物並且成為 陶是層之陶竞原材料照射YAG雷射的第2次高諧波或第3次 高諧波之雷射光，藉以於陶㈣材料上形成通孔之步驟。 本發明人發現··藉由向含有含錯化合物（鈦酸錯或錯欽酸 ，等）之陶莞原材料照射YAG雷射的第2次高諧波或第3次 高諧波之雷射光’可形成如下之良好通孔。即，先前通常 以叫雷射進行雷射光照射時，於通孔週邊大量堆積飛散 物，相對於此進行YAG雷射之第2次冑請波或第3次高譜波 的雷射光照射時，於通孔週邊可幾乎消除飛散物之堆積。 藉此可防止因飛散物造成之通孔堵塞，因此例如可藉由向 通孔内進行導電糊膠之充填網版印刷，於通孔内確^形成 導電構件。因此，陶兗層之一端面側與另—端面側之間的 電氣性連接可介以通孔確實完成。 又，於此第2陶究元件之製造方法中，較好為使雷射光藉 由例如Q切換進行脈衝振盪。通常藉由雷射光照射形成通孔 時，若非以例如Q切換進行之脈衝振盪時，則加工其 錄 B Ej 難，通孔之形狀於雷射光入射面侧成為底部擴大的圓錐 形，又因加工產生之飛散物不會飛散起來而是成為加工屑 堆積於通孔之週邊。然而將雷射光藉由例如Q切換進行脈衝 振盪，藉此可輕易獲得較大之峰值輸出，可抑制通孔形狀 91940.doc[Technical Field] The present invention relates to a method of manufacturing a ceramic element such as a laminated piezoelectric element, a laminated piezoelectric actuator, or a piezoelectric inductor, and a manufacturing system thereof, and more specifically The invention relates to a manufacturing method and a manufacturing system for a ceramic component in which a through hole is electrically connected between one end face side and the other end face side of a ceramic layer. [Prior Art] In recent years, the technical development of the laminated piezoelectric element which is one of the components of the ceramics is being actively promoted. Such a laminated piezoelectric element is disclosed in Japanese Laid-Open Patent Publication No. 2002-254634. The laminated piezoelectric element disclosed in the patent document is formed by patterning a piezoelectric layer of a plurality of unit electrodes with a piezoelectric layer forming a common electrode pattern and arranging in the thickness direction of the laminated piezoelectric element. Each of the individual electrodes is connected by a conductive member through a through hole formed in the piezoelectric layer. In such a laminated piezoelectric element, an active portion corresponding to the specific single electrode electrode can be formed on the piezoelectric layer by applying a voltage between the specific single electrode and the common electrode (due to the piezoelectric effect) Part of the distortion) is selectively shifted. [Explanation of the Invention] In the ceramic element including the laminated piezoelectric element described above, it is desirable to have a high integration of the element itself and the electrode formed on the element. A technique in which the through hole can be electrically connected between one end face side and the other end face side of the ceramic layer. 91940.doc 1334662 Accordingly, the present invention has been accomplished in such a manner that the purpose is to provide a through-hole Tauman element that does form an electrical connection between one end face side and the other end face side of the ceramic layer. Manufacturing method and manufacturing system. (Means for Solving the Problem) In order to achieve the above object, the manufacturing method of the first ceramic material of the present invention is formed by forming a through hole formed in the ceramic layer between one end surface side and the other end surface side of the ceramic layer. The electrical connector is characterized in that: the step of forming a ceramic material layer to be a Tauman layer on the surface of the holding member, and the step of simultaneously shrinking the holding member and the ceramic material layer, and after heat shrinking A step of forming a via hole in the ceramic material layer. In the manufacturing method of the first ceramic component, after the ceramic layer of the ceramic material is formed on the surface of the holding member, the holding member and the ceramic material layer are heated (4) before the through hole is formed in the ceramic material layer. Thereby, it is possible to make the step after the formation of the through hole, and even if the holding member and the (four) layer are heated, the holding member and the ceramic layer hardly cause the in-step heat shrinkage. Therefore, it is possible to prevent the shape of the through hole from being distorted and the position at which the through hole is formed from being displaced. The electrical connection between the end face side and the other end face side of the ceramic layer can be surely completed through the through hole. Further, in the method for producing a first ceramic element, the step of forming a through-hole and printing a paste-like conductive material onto the Tauman material layer, and drying the conductive material printed on the raw material layer at a specific drying temperature In the step of thermally shrinking, it is preferred that the holding member and the ceramic material layer are heat-shrinked at a temperature higher than the drying temperature. Therefore, if the specific drying temperature is higher when the conductive material is dried, the holding member and the ceramic raw material 91940.doc 1334662 material layer are heat-shrinked, thereby preventing the shape of the through hole from being distorted when the conductive material is dried, or The position at which the holes are formed is offset. Furthermore, the manufacturing method of the second ceramic component of the present invention is characterized in that an electro-emulsion connector is formed between the end face side and the other end face side of the ceramic layer by forming a through hole in the (four) layer. The step of irradiating the second harmonic or the third harmonic of the YAG laser to the ceramic material containing the compound and forming the ceramic layer, thereby forming a through hole in the ceramic material. The present inventors have found that by irradiating a second harmonic or a third harmonic laser light of a YAG laser to a pottery material containing a compound containing a wrong compound (titanium acid or dynamic acid, etc.) Good through holes can be formed as follows. In other words, when laser light is irradiated by a laser in the past, a large amount of scattered matter is accumulated around the through hole, and when the second ray of the YAG laser or the laser beam of the third high-spectrum is irradiated, The accumulation of scattered matter can be almost eliminated around the through hole. Thereby, the clogging of the through holes due to the scattered matter can be prevented. Therefore, for example, the conductive member can be formed in the through holes by performing screen printing of the conductive paste into the through holes. Therefore, the electrical connection between the end face side and the other end face side of the ceramic enamel layer can be surely completed through the through hole. Further, in the method of manufacturing the second ceramic element, it is preferred that the laser light is pulse-oscillated by, for example, Q switching. When a through hole is formed by laser light irradiation, it is difficult to process the recording B Ej without pulse oscillation such as Q switching. The shape of the through hole becomes a conical shape with the bottom enlarged on the incident side of the laser light, and is processed by the The generated scattered matter does not scatter but becomes a process debris accumulated around the through hole. However, the laser light is pulse-oscillated by, for example, Q switching, whereby a large peak output can be easily obtained, and the shape of the through hole can be suppressed. 91940.doc
DOZ =圓錐狀或飛散物堆積之情形。藉此，例如自陶究原 -端面側照射雷射光而形成通孔，並以包含此通孔 2式於—端面上形成電極圖案之情形下，可將相對於該 通孔之相對尺寸縮小。因此，可使電極更加微小化， 而可實現電極之馬集成化或陶究元件之小型化。 ^且，本發明之第3陶莞元件的製造方法係介以形成於陶 二：之通孔於陶莞層之-端面側與另-端面側之間形成 :孔連接者，其特徵為具備藉由於成為陶究層之陶究原 材料上㈣導電材料’形成覆蓋形成於陶:£原材料上之通 心㈣圖案的步驟’以及將印刷於㈣原材料 之導電材料以特定的乾燥溫度進行乾燥之步驟並且於形 成導電圖案之步驟與乾燥導電材料之步驟之間，以低於乾 無溫度之加熱溫度將印刷有導電材料之陶曼原材料進行加 熱。 於此第3陶究元件之製造方法中，藉由導電材料之印刷形 ，覆盖通孔-端側的導電圖案後，以較用以將該導電材料 元全乾燥之乾燥溫度為低的加熱溫度將陶瓷原材料加埶。 藉由此加熱’印刷於陶究原材料上之導電材料會軟化，因 此可使導電材料遍佈於通孔内。此效果於加熱溫度為坑 C範圍之度時較為顯著。繼而，此加熱後通過使導 電材料乾燥，可於通孔内確實形成自通孔之一端至另一端 連續的導電材料。因此，根據此陶瓷元件之製造方法，可 介以通孔確實實現陶莞層之一端面側與另一端面侧之間的 電氣性連接。 9l940.doc -10- 1334662 更且，本發明之第4陶曼元件的製造方法，係介以形成於 陶瓷層上之通孔於陶瓷層之一端面側與另一端面側之間形 成电氣!·生連接者，其特徵為具備以下之步驟：以第】標記為 位置基準’於成為陶瓷層之陶瓷原材料上形成通孔的步 驟；向陶曼原材料印刷導電材料，藉以形成第2標記與覆蓋 通孔之一端側的導電圖案之步驟；及檢測請記與第2標 δ己之間的位置關係之步驟。 又本發明之陶瓷元件的製造系統係介以形成於陶瓷層 亡之通孔，於陶瓷層之一端面側與另一端面側之間形成電 氣^連接者’其特徵為具備以下機構：通孔形成機構，其 、第1心》己為位置基準，於成為陶曼層之陶竟原材料上形成 通=，印刷機構，其向陶曼原材料印刷#電材料，藉以形 成第2標記與覆蓋通孔之一端侧的導電圖案；及檢測機構， 其檢測第1標記與第2標記之間的位置關係。 於第4陶U件之製造方法及製造系統中，係以約標記 為=置基準形成通孔’並藉由印刷同時形成覆蓋該通孔之 山J的導電圖案與第2標記。因此，藉由檢測第丄標記與 第2標記之間的位置關係，可計算出導電圖案之相對於通孔 的开/成位置。藉此’當導電圖案相對於通孔產生位置偏離 :形時彳基於第i標έ己與第2標記之間的位置關係校正 該位置之偏離，並且於陶究原材料上形成導電圖案，或將 成有導電圖案之陶究原材料進行疊層。又，當導電圖 案2相對於通孔之位置偏離大於特定值而無法校正時，可 判定該H原材料為不良品並即刻將其篩除以避免以後流 9l940.doc -11 - 1334662 入下一步驟。如此’藉由本發明，可提高導電圖案之相游 於通孔的位置精度’故而可介以通孔於陶瓷層之一端面側 與另一端面側之間確實形成電氣性連接。 於此處’所謂pm件絲示包含藉由㈣材料而形成 之陶瓷層之兀件’存在有積層型壓電元件、壓電感測器、 電谷器、電感器、變壓器、以及濾波器、以及將此等複合 形成之元件等。 (發明效果） 如上述說明，藉由本發明，可製造出介以通孔使陶瓷原 材料層之-端面側與另—端面側之間確實形成電氣性連接 的陶瓷元件。 【實施方式】 以下佐以圖式詳細說明本發明之適宜的實施形態。 首先，參照圖1及Η 2，說明藉由本發明之實施形態所製 造的積層型壓電元件1(陶瓷元件）。 如圖1所示，積層型壓電元件丨係由形成有單體電極2之壓 電體層（陶瓷層）3與形成有共通電極4之壓電體層（陶瓷層 各四片交互疊層，並由形成有端子電極之壓電體層7與作為 基底之壓電體層9自上下夾持而構成。 另外，各壓電板3、5、7、9係以結欽酸錯為主要成分， 形成，「lGmmx3〇mm，厚度為3。师」之長方形薄板狀。 又，單體電極2以及共通電極4係以銀及鈀為主要成分，藉 由網版印刷形成圖案者。此點對下述之各電極亦然。 於各壓電體層3之上面 多數個單體電極2配置為矩陣 9l940.doc -12· 1334662 獨立：藉由互相設定特定間隔，以達成電氣性之 ，並且防止由於相互振動產生之影響。繼而，各單體 極2於其外方側端部之正下方連接至形成於壓電體们上 的通孔13内之導電構件（除最下方之磨電體層3以外）。 更且，於壓電體層3之上面的邊緣部’形成有用以將位於 ^下方之㈣體層5的共通電極4、4進行電氣性連接之中繼 電極。此中繼電極6於其正下方連接至形成於麼電體们 上之通孔8内的導電構件。 又’各壓電體層5之上面上，於積層型壓電元件i之厚户 方向上，以_體層3之各單體電極2的外方側端部方： 相對之方式形成有中繼電極16 (以下，將「積層型壓電元件 1之厚度方向」即「壓電體層3、5之厚度方向」簡稱為「厚 向」）各中繼冑極16於其正下方連接至形成於壓電體 層5上之通孔13内的導電構件。 更且，於壓電體層5之上面，形成有長方形狀之共通電極 4。此共通電極4自厚度方向所見係形成為鋪滿狀，以使與 壓電體層3中的各單體電極2之外方側端部以外的部分相重 疊。另外’共通電極4於厚度方向上連接至形成於麼電體層 5上之通孔8内的導電構件，以使其與壓電體層3之中繼電極 6方向相對。 又，於取上層之壓電體層7的上面，於厚度方向上形成有 與壓電體層5之各中繼電極16方向相對的外部電極17，於厚 度方向上形成有與壓電體層3之中繼電極6方向相對的外部 電極18。繼而，各外部電極17於其正下方連接至形成於壓 91940.doc •13- 1334662 電體層7上之通孔13内的導電構件；外部電極18於其正下方 連接至形成於壓電體層7上之通孔8内的導電構件。又，於 最下層之壓電體層9之上面，以自壓電體層9之外周部設定 特定間隔之方式，形成有長方形薄板狀之共通電極19。 另外，最上層之各外部電極17、18為安裝用以與驅動電 源進行電氣性連接之導線而使用銀之燒痕電極，作為積芦 型壓電元件1之端子電極而產生作用。 藉由將形成有如上之電極圖案之壓電體層3、5、7、9進 行疊層，相對於最上層之各外部電極17，於厚度方向上四 個單體電極2介在於中繼電極16間順序排列，經順序排列之 各電極2、16、17藉由通孔13内之導電構件形成電氣性連 接。具體而言，如圖2所示，於厚度方向上相鄰之單體電極 2、2介在於中繼電極16間，藉由通孔13内之導電構件丨斗形 成電氣性連接。 另一方面，相對於最上層之外部電極18，於厚度方向上 四個共通電極4與最下層之共通電極19介在於中繼電極6間 順序排列，經順序排列之各電極4、6、18、19藉由通孔8 内之導電構件.14形成電氣性連接。 藉由如此之積層型壓電元件的電氣性連接，若於特定 之外部電極17與外部電極丨8之間施加電壓時，順序排列於 特定外部電極17下的單體電極2與共通電極4、19之間將會 施加電壓。藉此，於壓電體層3、5中，如圖2所示於單體 電極2之外方侧端部以外的部分與以共通電極4 ' 19所夾之 部分中產生電場，該部分作為活性部21產生移位。因此， 91940.doc -14- 1334662 可藉由選擇施加電壓之外部電極17，於對應於配置為矩陣 狀之單體電極2的活性部21中，使順序排列於所選擇之外部 電極17下的活性部21移位至厚度方向❶如此之積層型壓電 元件1適用於微型泵之閥控制等需要微小移位的各種裝置 之驅動源。 (第1實施形態） 接著，參照圖3至圖7作為本發明第丨實施形態之陶瓷元件 的製造方法，說明上述積層型壓電元件丨的製造方法。 首先，如圖3所示，向以鍅鈦酸鉛為主要成分之壓電材料 中混合有機黏合劑、有機溶劑等製作糊膠，將此糊膠保存 於罐槽31内。繼而，於將載膜（保持構件）32自捲軸33向另外 之捲軸33捲取之間，藉由刮板法於載膜32之上面形成成為 壓電體層3、5、7、9之未加工陶板（陶兗原材料層）34 (陶瓷 板成形步驟另外，作為載膜32係使用厚度為54 、寬 度為100 mm之透明PET薄膜。又，形成於載膜32之上面的 未加工陶板34之厚度為40 μπι。 陶瓷板成形步驟之後，如圖4所示，將形成有未加工陶板 34之載膜32自捲軸33向另外之捲軸33捲取之間，使用加熱 爐36將載膜32及未加工陶板34同時加熱，使彼等強制收縮 (熱處理步驟）。藉此，可防止下一步驟以後之載膜32及未加 工陶板34之熱收縮，並且可位置精度準確地進行通孔之形 成及電極圖案之形成。 熱處理步驟之後，如圖5所示，將形成有未加工陶板34 之載膜32自捲軸33向另外之捲軸33捲取，並且使用衝孔裝 91940.doc -15- 1334662 置37形成位置基準穴，以此位置基準穴為基準於未加工陶 板34之特定位置，使用雷射加工裝置38形成通孔8、^(未 圖示）（通孔形成步驟）。另外，位置基準穴可形成於於之後 的切斷步驟中成為廢料之未加工陶板的外緣部，或當載膜 32之外緣部存在有未形成未加工陶板34的空白部時，可形 成於該空白部處。 通孔形成步驟之後，如圖6所示，使用網版印刷裝置％， 1通孔8、13内自未加工陶板34之上面側進行導電糊膠（糊 膠狀之導電材料）的充填網版印刷（第1印刷步驟）。繼而，為 於通孔8、13内使導電糊膠乾燥.固化而形成導電構件μ， 將載膜32及未加工陶板34置於乾燥機中（第！乾燥步驟卜但 於此第1乾燥步驟之前，以低於該乾燥溫度之溫度將載膜32 及未加工陶板34加熱特定時間（加熱步驟）。藉由此加熱使導 電糊膠軟化，並使導電糊膠確實遍佈通孔8、13内直至其下 端部。 八 第1乾燥步驟之後，向未加工陶板34上面之特定位置進行 導電糊膠之網版印刷（第2印刷步驟）。繼而，將載膜32及未 加工陶板34置於乾燥機中，使導電糊膠乾燥·固化而形成各 電極2、4、17、19等（第2乾燥步驟）。另外，於第j及第2印 刷步驟中所使用之導電糊膠係向包含特定比率之銀與鈀的 金屬材料中混合有機黏合劑、有機溶劑等製作而成。 第2乾燥步驟之後，如圖7所示，使用.拾取裝置41將特定 長度之未加工陶板34a自载膜32剝離，將未加工陶板34&疊 層使其與上述之積層型壓電元件丨的疊㈣序㈣，並進^ 91940.doc -16- 1334662 假壓接（疊層步騾）。 疊層步驟之後，藉由加熱並且向疊層方向進行擠壓，將 各未加工陶板34a進行熱廢接，製作積層體未加卫陶板（播 壓步驟)。繼而，自此積層體未加工陶板切出複數片特定尺 寸之積層體未加工陶板元件，將所切出之積層體未加工陶 板元件進行脫脂·堤成之後，經過端子電極之形成分極處理 等完成積層型壓電元件1(完成步驟）。 其次進一步詳細說明本實施㈣之熱處理步驟。 於此熱處理步驟中，較好為以90t以上15(rc以下之溫度 使載膜32及未加工陶板34作熱收縮。而且，自熱收縮：： 及製造成本之觀點來看，熱處理時間較好為2分鐘〜5分鐘。 此處，熱收縮時較好為㈣以上之溫度的理由如下。即， 於上述P及第2乾燥步驟中以高於⑽(較好树以上） 低於9(TC之範圍内的乾燥溫度進行導電糊膠之乾燥.固化。 因此，若以贼以上之溫度使載膜32及未加工陶板34作教 I缩’可大致消除乾燥步驟中之載膜32及未加工陶板34之 熱收縮’可防止於該乾燥步驟中產生通孔8、此形狀畸 丁 置丞早八之通孔8、13的位置產生偏移之情 形0 另一方面，熱收縮時較杯或,。 乎乂野為150CU下之溫度的理由如 下。即，若以高於15CTC之、、®疮, 之v皿度進仃加熱，則載膜32有可能 產生較大變形或溶融。又，土丄 未加工陶板34之黏合劑成分有 可能變質。 如此’藉由W成形步驟與通孔形成步驟之間設有熱 91940.doc ' 17- 1334662 處理步驟’於通孔形成步驟以後之步驟中，即使加熱載膜 32及未加工陶板34 ’亦可幾乎消除載膜32及未加工陶板34 之進一步熱收縮。 藉此’可防止由衝孔裝置37所形成之位置基準穴畸變， 或其形成位置產生偏移之情形，因此可以此位置基準穴為 基準’於未加工陶板34之特定位置高精度形成通孔8、13。 繼而，可高精度向通孔8、13内之導電糊膠進行充填網版印 刷、向未加工陶板34之上面特定位置進行導電糊膠之網版 印刷、以及進行疊層步驟中各未加工陶板34a之疊層。另 外，將位置基準穴設於未形成有未加工陶板34之載膜32的 空白部時，若未設有熱處理步驟則可能產生較大位置偏 移’故而此時設置熱處理步驟特別有效。 繼而，於「10 mmx30 mm，厚度為30μιη」之壓電體層3 之上面，製作形成有三百個（4列75行）單體電極2的積層型壓 電元件1時，經實施熱處理步驟與未經實施熱處理步驟之情 形下’分別測定積層型壓電元件1中各壓電體層3、5之相對 疊層偏移。結果，未經實施熱處理步驟之情形下疊層偏移 為50 μπι〜100.μιη，而經實施熱處理步驟之情形下疊層偏移 為20 μιη以下。 又，如上所述，由於於通孔形成步驟之後的步驟中幾乎 未產生載膜32及未加工陶板34之熱收縮，因此可防止由雷 射加工裝置38所形成之通孔8、13的形狀畸變。藉此，可於 通孔8、13内確實形成導電構件14。 由以上事項表明，根據本實施形態之陶瓷元件的製造方 91940.doc -18- 1334662 法，藉由於陶瓷板成形步驟與通孔形成步驟之間設置熱處 理步驟，可製造介以通孔8、13確實使壓電體層3、5之上面 側與下面側之間形成電氣性連接之積層型壓電元件1。 (第2實施形態） 接著，參照圖8至圖1〇，作為本發明第2實施形態之陶瓷 元件的製造方法’說明上述積層型壓電元件1之製造方法。 於本實施形態中，與上述第丨實施形態相同，係經過陶瓷 板形成步驟、熱處理步驟、通孔形成步驟、第丨印刷步驟、 加熱步驟、第1乾燥步驟、第2印刷步驟、第2乾燥步驟、疊 層步驟、壓製步驟以及完成步驟而製造積層型壓電元件^ 其次，更加詳細說明本實施形態中之通孔形成步驟。 如圖8所示，於通孔形成步驟中，形成有未加工陶板34DOZ = Conical or scattered matter accumulation. Thereby, for example, a through hole is formed by irradiating laser light from the original end face side, and in the case where the electrode pattern is formed on the end face including the through hole 2, the relative size with respect to the through hole can be reduced. Therefore, the electrode can be further miniaturized, and the integration of the electrode or the miniaturization of the component can be realized. Further, the manufacturing method of the third pottery component of the present invention is formed by forming a through hole in the ceramic hole: between the end surface side and the other end surface side of the ceramic layer: a hole connector, which is characterized by By the step of the ceramic material of the ceramic layer (4) the conductive material 'forms the step of forming the core (four) pattern formed on the ceramic material: and the step of drying the conductive material printed on the (four) raw material at a specific drying temperature. And between the step of forming the conductive pattern and the step of drying the conductive material, the Tauman raw material printed with the conductive material is heated at a heating temperature lower than the dry temperature. In the manufacturing method of the third ceramic component, the conductive pattern of the conductive material is used to cover the conductive pattern of the through-hole side, and the drying temperature is lower than the drying temperature for drying the conductive material element completely. Twist the ceramic raw materials. By heating thereby, the conductive material printed on the ceramic material is softened, so that the conductive material can be spread throughout the through hole. This effect is remarkable when the heating temperature is in the range of pit C. Then, by heating the conductive material after the heating, a continuous conductive material from one end of the through hole to the other end can be surely formed in the through hole. Therefore, according to the manufacturing method of the ceramic element, the electrical connection between one end side and the other end side of the ceramic layer can be surely realized through the through hole. 9l940.doc -10- 1334662 Furthermore, the fourth method of manufacturing the Tauman element of the present invention forms an electrical connection between one end face side and the other end face side of the ceramic layer via a through hole formed in the ceramic layer. A raw connector is characterized in that the step of forming a through hole in a ceramic material to be a ceramic layer by using the first mark as a position reference; and printing a conductive material to the Tauman raw material to form a second mark and a step of covering a conductive pattern on one end side of the through hole; and a step of detecting a positional relationship between the second mark and the second mark. Further, the manufacturing system of the ceramic component of the present invention is formed by forming a via hole formed in the ceramic layer, and forming an electrical connector between the one end surface side and the other end surface side of the ceramic layer. The feature is that the following mechanism is provided: the through hole The forming mechanism, the first heart has been the positional reference, and the printing material is formed on the ceramic material which becomes the Tauman layer, and the electric material is printed on the Tauman raw material to form the second mark and the covering through hole. a conductive pattern on one end side; and a detecting mechanism that detects a positional relationship between the first mark and the second mark. In the manufacturing method and manufacturing system of the fourth ceramic U, the through hole ' is formed with a mark as a reference mark, and the conductive pattern and the second mark covering the mountain J of the through hole are simultaneously formed by printing. Therefore, by detecting the positional relationship between the second mark and the second mark, the opening/closing position of the conductive pattern with respect to the through hole can be calculated. Thereby, when the conductive pattern is displaced from the through hole: the shape is corrected based on the positional relationship between the i-th mark and the second mark, and the conductive pattern is formed on the raw material, or A ceramic material having a conductive pattern is laminated. Moreover, when the position of the conductive pattern 2 with respect to the through hole deviates from a specific value and cannot be corrected, it can be determined that the H raw material is a defective product and is immediately screened to avoid the subsequent flow of 9l940.doc -11 - 1334662 to the next step. . Thus, according to the present invention, the positional accuracy of the phase of the conductive pattern in the through hole can be improved. Therefore, the through hole can be surely electrically connected between the one end surface side and the other end surface side of the ceramic layer. Here, the so-called pm piece shows a ceramic element including a ceramic layer formed by (4) materials. There are laminated piezoelectric elements, piezoelectric detectors, electric grids, inductors, transformers, and filters. And components such as these composites. (Effect of the Invention) As described above, according to the present invention, it is possible to manufacture a ceramic element which is electrically connected to each other between the end surface side and the other end surface side of the ceramic raw material layer via the through hole. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. First, a laminated piezoelectric element 1 (ceramic element) manufactured by an embodiment of the present invention will be described with reference to Figs. 1 and 2 . As shown in FIG. 1, the laminated piezoelectric element is composed of a piezoelectric layer (ceramic layer) 3 on which a single electrode 2 is formed, and a piezoelectric layer in which a common electrode 4 is formed (four ceramic layers are alternately laminated, and The piezoelectric layer 7 on which the terminal electrode is formed and the piezoelectric layer 9 as the base are sandwiched from the upper and lower sides. Further, each of the piezoelectric plates 3, 5, 7, and 9 is formed by using a complex acid as a main component. "1Gmmx3〇mm, thickness is 3." The shape of the rectangle is thin. The single electrode 2 and the common electrode 4 are mainly composed of silver and palladium, and are patterned by screen printing. The plurality of individual electrodes 2 are disposed on the upper surface of each of the piezoelectric layers 3 as a matrix 9l940.doc -12· 1334662 independently: by setting a specific interval to each other to achieve electrical properties, and preventing mutual vibration Then, the respective unit poles 2 are connected to the conductive members (excluding the lowermost grinding body layer 3) formed in the through holes 13 formed in the piezoelectric bodies directly under the outer end portions thereof. Moreover, the edge portion 'on the upper surface of the piezoelectric layer 3 is formed to be useful The common electrode 4, 4 of the (four) body layer 5 located below the ^ is electrically connected to the relay electrode. The relay electrode 6 is directly connected to the conductive member formed in the through hole 8 formed on the electric body. On the upper surface of each piezoelectric layer 5, in the direction of the thick layer of the laminated piezoelectric element i, the outer side end of each of the individual electrodes 2 of the _body layer 3 is formed with a relay electrode 16 opposed thereto. (Hereinafter, the "thickness direction of the laminated piezoelectric element 1", that is, the "thickness direction of the piezoelectric layers 3, 5" is simply referred to as "thickness"). Each of the relay drains 16 is connected directly under the piezoelectric layer to form a piezoelectric A conductive member in the through hole 13 in the bulk layer 5. Further, a rectangular common electrode 4 is formed on the upper surface of the piezoelectric layer 5. The common electrode 4 is formed in a thickness from the thickness direction so as to be The portions other than the outer side end portions of the respective unit electrodes 2 in the piezoelectric layer 3 are overlapped. Further, the common electrode 4 is connected to the conductive member formed in the through hole 8 formed on the electro-electric layer 5 in the thickness direction, So that it faces the relay electrode 6 of the piezoelectric layer 3 in the direction of the relay electrode 6. On the upper surface of the piezoelectric layer 7, an external electrode 17 facing the direction of each of the relay electrodes 16 of the piezoelectric layer 5 is formed in the thickness direction, and a direction opposite to the direction of the relay electrode 6 of the piezoelectric layer 3 is formed in the thickness direction. External electrode 18. Then, each external electrode 17 is directly underneath it to a conductive member formed in the through hole 13 formed on the electric layer 7 of the pressure 91940.doc • 13-1334662; the external electrode 18 is connected directly underneath to the formation a conductive member in the through hole 8 in the piezoelectric layer 7. Further, a common electrode having a rectangular thin plate shape is formed on the upper surface of the piezoelectric layer 9 of the lowermost layer so as to set a specific interval from the outer peripheral portion of the piezoelectric layer 9. Further, each of the outermost electrodes 17 and 18 of the uppermost layer serves as a terminal electrode for the yoke-type piezoelectric element 1 by using a silver-scratch electrode for mounting a wire for electrically connecting to a driving power source. By laminating the piezoelectric layers 3, 5, 7, and 9 having the electrode patterns as described above, the four single-electrode electrodes 2 are interposed in the relay electrode 16 in the thickness direction with respect to the external electrodes 17 of the uppermost layer. Arranged in order, the sequentially arranged electrodes 2, 16, 17 are electrically connected by conductive members in the through holes 13. Specifically, as shown in Fig. 2, the individual electrodes 2, 2 adjacent in the thickness direction are interposed between the relay electrodes 16, and are electrically connected by a conductive member bucket in the through hole 13. On the other hand, with respect to the outer electrode 18 of the uppermost layer, the four common electrodes 4 and the lowermost common electrode 19 are sequentially arranged in the thickness direction between the relay electrodes 6, and the electrodes 4, 6, and 18 are sequentially arranged. 19 is electrically connected by the conductive member .14 in the through hole 8. When the voltage is applied between the specific external electrode 17 and the external electrode 8 by the electrical connection of the laminated piezoelectric element, the single electrode 2 and the common electrode 4 are sequentially arranged under the specific external electrode 17, A voltage will be applied between 19. Thereby, in the piezoelectric layers 3, 5, an electric field is generated in a portion other than the end portion on the outer side of the unit electrode 2 and a portion sandwiched by the common electrode 4'19 as shown in Fig. 2, which is active. The portion 21 produces a shift. Therefore, 91940.doc -14-1334662 can be sequentially arranged under the selected external electrode 17 in the active portion 21 corresponding to the single-electrode electrode 2 arranged in a matrix by selecting the external electrode 17 to which the voltage is applied. The active portion 21 is displaced to the thickness direction. The laminated piezoelectric element 1 is suitable for a driving source of various devices requiring minute displacement such as valve control of a micro pump. (First Embodiment) A method of manufacturing the laminated piezoelectric element 说明 will be described below with reference to Fig. 3 to Fig. 7 as a method of manufacturing a ceramic element according to a third embodiment of the present invention. First, as shown in Fig. 3, a paste is prepared by mixing an organic binder, an organic solvent, or the like with a piezoelectric material containing lead bismuth titanate as a main component, and the paste is stored in the tank 31. Then, between the carrier film (holding member) 32 is taken up from the reel 33 to the other reel 33, the unprocessed piezoelectric layer 3, 5, 7, 9 is formed on the upper surface of the carrier film 32 by the squeegee method. Ceramic plate (ceramic material layer) 34 (ceramic plate forming step Further, as the carrier film 32, a transparent PET film having a thickness of 54 and a width of 100 mm is used. Further, the thickness of the unprocessed ceramic plate 34 formed on the carrier film 32 is used. After the ceramic plate forming step, as shown in FIG. 4, the carrier film 32 on which the unprocessed ceramic plate 34 is formed is taken up from the reel 33 to the other reel 33, and the carrier film 32 and the unloaded film are used. The processed ceramic plates 34 are simultaneously heated to force them to contract (heat treatment step). Thereby, heat shrinkage of the carrier film 32 and the unprocessed ceramic plate 34 after the next step can be prevented, and the formation of through holes can be accurately performed with positional accuracy and Formation of the electrode pattern. After the heat treatment step, as shown in Fig. 5, the carrier film 32 on which the unprocessed ceramic plate 34 is formed is taken up from the reel 33 to the other reel 33, and is punched using the 91940.doc -15-1334662. 37 forming a position reference point, this position The reference hole is defined at a specific position of the unprocessed ceramic plate 34, and a through hole 8 (not shown) is formed using the laser processing device 38 (through hole forming step). Further, the position reference hole can be formed in the subsequent cutting. In the step, the outer edge portion of the unprocessed ceramic plate which becomes the waste material or the blank portion where the unprocessed ceramic plate 34 is not formed may be formed at the outer edge portion of the carrier film 32. After the through hole forming step, As shown in Fig. 6, filling screen printing of a conductive paste (adhesive-like conductive material) from the upper side of the unprocessed ceramic plate 34 in the through-holes 8, 13 using the screen printing apparatus % (first printing step) Then, in order to dry the conductive paste in the through holes 8, 13, and solidify to form the conductive member μ, the carrier film 32 and the unprocessed ceramic plate 34 are placed in a dryer (the first drying step but the first drying) Before the step, the carrier film 32 and the unprocessed ceramic plate 34 are heated at a temperature lower than the drying temperature for a specific time (heating step), whereby the conductive paste is softened by heating, and the conductive paste is surely distributed throughout the through holes 8, 13 Inside to the lower end. Eight first dry After the step, screen printing of the conductive paste is performed to a specific position on the upper surface of the unprocessed ceramic plate 34 (second printing step). Then, the carrier film 32 and the unprocessed ceramic plate 34 are placed in a dryer to dry the conductive paste. Curing to form each of the electrodes 2, 4, 17, 19, etc. (second drying step). The conductive paste used in the jth and second printing steps is in a metal material containing a specific ratio of silver and palladium. After the second drying step, as shown in FIG. 7, the unprocessed ceramic plate 34a of a specific length is peeled off from the carrier film 32 by using the pick-up device 41, and the unprocessed ceramic plate 34& The layer is stacked (4) with the above-mentioned laminated piezoelectric element ,, and is subjected to a false crimping (stacking step) of 91940.doc -16 - 1334662. After the laminating step, each of the unprocessed ceramic plates 34a is thermally scraped by heating and pressing in the lamination direction to produce a laminated body without a ceramic plate (a weaving step). Then, the unprocessed ceramic plate of the laminated body is cut out of a plurality of laminated unprocessed ceramic plate elements of a specific size, and the unprocessed ceramic plate elements of the laminated body are degreased and formed, and then formed by terminal electrode formation. The laminated piezoelectric element 1 (completed step). Next, the heat treatment step of the fourth embodiment of the present invention will be described in further detail. In the heat treatment step, it is preferred that the carrier film 32 and the unprocessed ceramic plate 34 are heat-shrinked at a temperature of 90 volts or more and 15 or less, and the heat treatment time is good from the viewpoint of heat shrinkage: and manufacturing cost. The reason for the temperature of (4) or more at the time of heat shrinkage is as follows. That is, in the above P and the second drying step, it is higher than (10) (better than the tree) and lower than 9 (TC). The drying temperature in the range is performed to dry and solidify the conductive paste. Therefore, if the carrier film 32 and the unprocessed ceramic plate 34 are taught to be "reduced" by the temperature above the thief, the carrier film 32 in the drying step can be substantially eliminated and unprocessed. The heat shrinkage of the ceramic plate 34 prevents the occurrence of the through hole 8 in the drying step, and the shape of the through hole 8 and 13 of the shape of the first hole is offset. On the other hand, the heat shrinkage is compared with the cup or The reason why the wilderness is the temperature at 150 CU is as follows. That is, if the heat is higher than 15 CTC, and the sore, the carrier film 32 may be deformed or melted a lot. The binder composition of the unfinished terracotta board 34 may deteriorate. So 'by W Between the step of forming and the step of forming the through hole, there is a heat 91940.doc '17- 1334662 processing step'. In the step after the through hole forming step, even if the carrier film 32 and the unprocessed ceramic plate 34' are heated, the carrier film 32 can be almost eliminated. And further heat shrinkage of the unprocessed ceramic plate 34. Thereby, the position reference hole formed by the punching device 37 can be prevented from being distorted, or the position thereof is displaced, so that the reference point can be used as a reference for the raw material. The through holes 8 and 13 are formed with high precision at specific positions of the ceramic plate 34. Then, the conductive paste in the through holes 8 and 13 can be filled with screen printing with high precision, and the conductive paste can be applied to a specific position on the upper surface of the unprocessed ceramic plate 34. Screen printing and lamination of each of the unprocessed ceramic plates 34a in the laminating step. Further, when the position reference hole is provided in the blank portion of the carrier film 32 in which the unprocessed ceramic plate 34 is not formed, if no heat treatment step is provided It is possible to generate a large positional shift. Therefore, it is particularly effective to set the heat treatment step at this time. Then, on the piezoelectric layer 3 of "10 mm x 30 mm, thickness 30 μm", three hundred are formed ( When the laminated piezoelectric element 1 of the single-electrode 2 is subjected to a heat treatment step and a heat treatment step is not performed, the respective piezoelectric layers 3 and 5 in the laminated piezoelectric element 1 are respectively measured. The stacking is shifted. As a result, the stacking offset is 50 μm to 100.μιη without performing the heat treatment step, and the stacking offset is 20 μηη or less in the case of performing the heat treatment step. Since the heat shrinkage of the carrier film 32 and the unprocessed ceramic plate 34 is hardly generated in the step after the through hole forming step, the shape of the through holes 8 and 13 formed by the laser processing device 38 can be prevented from being distorted. The conductive member 14 is indeed formed in the through holes 8, 13. From the above, it is shown that, according to the method of manufacturing the ceramic element of the present embodiment, 91940. doc -18-1334662, by providing a heat treatment step between the ceramic plate forming step and the through hole forming step, the through holes 8, 13 can be manufactured. The laminated piezoelectric element 1 in which the upper surface side and the lower surface side of the piezoelectric layers 3 and 5 are electrically connected is surely formed. (Second Embodiment) A method of manufacturing the laminated piezoelectric element 1 will be described below with reference to Fig. 8 to Fig. 1A as a method of manufacturing a ceramic element according to a second embodiment of the present invention. In the present embodiment, as in the above-described third embodiment, the ceramic plate forming step, the heat treatment step, the through hole forming step, the second printing step, the heating step, the first drying step, the second printing step, and the second drying are performed. Step, Lamination Step, Pressing Step, and Finishing Step to Produce Laminated Piezoelectric Element Next, the through hole forming step in the present embodiment will be described in more detail. As shown in FIG. 8, in the through hole forming step, an unprocessed ceramic plate 34 is formed.
之载膜32係真空吸附於配置於捲軸33、33之間的載物台G 上。若於载物台43上吸附固定有載膜32及未加工陶板34， 則可藉由雷射加工裝置38使雷射光L之集光點P位於未加工 板34之特疋位置，雷射光L自未加工陶板之上面側昭 射。 …、 此時，相對於未加工陶板34之集光點p的位置係以攝 像機（攝像機構）攝像由衝孔裝置37所形成之複數個位置基 準穴（位置基準部），基於該圖像資料將其定位於相對於位置 基準穴之特定位置。 又，雷射光L·係Nd:使YAG雷射之第3次高諧波產生脈 振盪之堂· .1.The carrier film 32 is vacuum-adsorbed to the stage G disposed between the reels 33 and 33. When the carrier film 32 and the unprocessed ceramic plate 34 are adsorbed and fixed on the stage 43, the light collecting point P of the laser light L can be positioned at a special position of the unprocessed plate 34 by the laser processing device 38, and the laser light L From the top side of the unprocessed pottery plate, it is shot. ..., at this time, with respect to the position of the light collecting point p of the unprocessed ceramic plate 34, a plurality of position reference holes (position reference portions) formed by the punching device 37 are imaged by a camera (image pickup mechanism) based on the image data. Position it at a specific location relative to the location reference pocket. In addition, the laser light L· is Nd: the third harmonic of the YAG laser generates a pulse oscillation.
射先’以30 kHz之頻率、210 nsec之脈寬以及平妗 輸出為S 人T 之條件進行照射。繼而依據未加工陶板3 4之厚产 9194〇.d〇c -19- 1334662 或！成等，設疋照射於未加工陶板34之特定位置的發射次 數（即，藉由Q切換產生振盪之情形下雷射之重複照射次 數），以使於未加工陶板34上形成通孔13，並且藉由熔融等 开夕成於載膜32之孔穴為特定深度以下。於本實施形態中， 係對於厚度為40 μιη且具有以下組成之未加工陶板34，該組 成係以（Pb 0.97 Sr 0.03)[Ti 0.465 Zr 〇 535]〇3為主要成分且 向1莫耳主要成分添加0.5質量％的作為副成分2Nb2〇5，設 定發射次數為30次而進行雷射光L之照射。 藉由如此雷射光L之照射，如圖9所示，未加工陶板料上 之雷射光L的照射部位熔融·蒸發而形成有通孔13，通孔13 週邊幾乎未有飛散物之堆積。因&，可防止飛散物造成之 通孔13的堵塞，故而可藉由向通孔13内進行導電糊膠之充 填網版印刷，於通孔13内確實形成導電構件14。 又通常若藉由雷射光照射形成通孔，則通孔之形狀會 於雷射光入射面側成為底部擴大之圓錐狀，然而雷射光l 藉由例如Q切換使其脈衝振盪，藉此可抑制通孔擴大為圓錐 狀。本實施形態中，以規定通孔13之下面侧的直徑為4〇pm 而上面側之直徑為大約50 之方式，可抑制於通孔ΐ3之上 面側的擴大。 藉此，可使形成於上面之用以包含該通孔13的單體電極2 成為更加細小之形狀，並可實現單體電極2之高集成化或積 層型壓電元件1之小型化。此外，自未加工陶板34之上面側 充填至通孔13内的導電糊膠較易流動至下面側，可使導電 糊膠確實遍佈通孔13内直至其下端部。 91940.doc -20- 1334662 又，藉由如上所述設定發射次數而進行雷射光[之照射， 圖9所不，可防止載膜32之損傷。於本實施形態中，可將 載膜32之損傷深度控制於18 μιη以下。 藉此可防止通孔13内所充填之導電糊膠自未加工陶板Μ 與載膜32之間滲出至未加工陶板34的下面。並且，载膜^ 之損傷極小，因此於通孔形成步驟以後的其他步驟中，'可 將載膜32確實進行真空吸附’又藉由此真空吸附可防止載 膜32破損、開孔之事態。 繼而，於「10 mmx30 mm,厚度為3〇 之壓電體層3 的上面，製作形成有三百個（4列75行）單體電極2之積層型壓 電元件卜計算其良率，可得出以下結果。即，藉由雷射光 照射，於載膜32上形成貫通孔之情形下的良率為未滿 20/〇，載膜32之損傷深度為18〜48 μιη之情形下的良率為 50%左右。於此相對，載膜32之損傷深度為〇〜丨8 之情 形下的良率超過90%。另外，以一百四十個積層型壓電元 件1作為試驗對象，僅將與單體電極2對應之三百處靜電電 容均得以正常獲得的情形作為良品而計算良率。 其次，說明.上述通孔形成步驟中之雷射光照射與其他雷 射光照射的比較結果。 如圖10所示，C〇2雷射（波長1〇 6 之情形下，因雷射 光照射而產生之飛散物大量堆積於通孔週邊。又，使γΑ〇 雷射之基本波（波長1064 nm)連續（CW)振盪時，通孔於雷射 光入射面側大幅擴大。更且，使YAG雷射之基本波（波長 1064 nm)藉由例如Q切換產生脈衝振盪時，熱影響較大，通 91940.doc -21 - Ϊ334662 孔之直徑控制極其困難，又加工堆積物亦較多。 相對於此等，使YAG雷射之第3次高諧波（波長355 nm)藉 由Q切換產生脈衝振盪時（本實施形態），通孔週邊幾乎未有 飛散物之堆積’通孔於雷射光入射面側之擴大亦得以抑 制又’使YAG雷射之第2次雨諸波（波長532 nm)藉由Q切 換產生脈衝振盪時’亦獲得與使YAG雷射之第3次高諧波藉 由Q切換產生脈衝振盪時同樣之效果。基於以上比較結果可 得出以下結論：該雷射光較好為自YAg雷射產生振盡之雷 射光’並且係其波長轉換為532 nm以下波長之雷射光。 如上述說明，根據本實施形態之陶瓷元件的製造方法， 可於通孔形成步驟中於未加工陶板34上形成良好之通孔 8、13，因此可於通孔8、13内確實形成導電構件14。藉此， 例如於各壓電體層3中，可藉由通孔13内之導電構件14將上 面側之單體電極2與下面側之中繼電極16確實連接。又，於 各壓電體層5中，可藉由通孔8内之導電構件14將上面側之 共通電極4與下面侧之單體電極2確實連接。因此，可製造 f介以通孔8、U於壓電體層3、5之上面側與下面侧之間確 實形成電氣性連接的積層型壓電元件1。 (第3實施形態） —其次，參照圖η至圖15,作為本發明第3實施形態之陶兗 兀件的製造方法，說明上述積層型壓電元件丨的製造方法。 於本實施形態中’於上述第❻施形態相同係經過陶曼板 形成步驟、熱處理步驟、通孔形成步驟、第丨印刷步驟力 熱步驟、第m燥步驟、第2印刷步驟、第2乾燥步驟 91940.doc -22- 1334662 步驟、壓t步驟以及完成步驟巾製造積層職冑元件卜 其次，更加詳細說明本實施形態中第1印刷㈣、加熱步 驟以及第1乾燥步驟。 …^ 如圖11所示’於第i印刷步驟中，於未加工陶板34之上面 34a上，形成有包含通孔13之導電圖案63。若於第^印刷步 驟之後即刻將未加工陶板34放入乾燥爐52,則導電糊夥不 會自然下降至通孔13内之下端部而固丨，可能成為造成之 後連接不良的原gj。然而於本實施形態中，第丨印刷步鄉與 第1乾燥步驟之間設有加熱步驟，因此可防止產生如此之連 接不良。 即’於加熱步驟中，未加工陶板34置於加熱爐51中以 低於乾燥溫度之加熱溫度進行加熱，由於形成導電圖㈣ 之導電糊膠軟化，故而可使導電糊膠確實遍佈通孔Η内直 至其下端部》 繼而，於第1乾燥步驟中，未加工陶板34置於乾燥爐52 卜以乾燥溫度進行加熱，由於導電糊膠乾燥.固化，因此 如圖12所示，可使自通孔13上端—直連接至下端之導電構 件14確實形成於通孔η内。 如此’可將能夠確實實現未加工陶板34之上面3心側盜下 面3朴側之間的電氣性連接之導電構件14形成於通孔8二3 内’因此根據本實施形態之陶究元件的製造方法，可製造 介以通孔8、13確實形成壓電體層3、5之上面側與下面側之 間的電氣性連接之積層型壓電元件！。 又’與上述加熱步驟中’較好為將加熱溫度設定為25t 91940.doc -23- 1334662 〜5〇°C範圍之溫度’將加熱時間設定為ι分鐘以上之時間。 另外，上述第1乾燥步驟中之乾燥溫度為高於50°C(較好為 70°C以上）且低於9〇t範圍内之溫度。 ‘、、、 於此處’較好為將加熱溫度設U25°C〜5(rc範圍之严 度的理由參考圖13即可明瞭。㈣係表示製作於「:皿〇 mmx30 mm，厚度為3〇 之壓電體層3的上面形成有三 百=列75行）單體電極2之積層型壓電元件1時，將加熱時 門叹疋為兩刀鐘(固定)，改變加熱溫度時之積層型壓電元件 1的良率之圖°由®13可知：當加熱溫度為2rc〜5(rc範園 内日T ’良率超過9〇%’然而—旦超過机其良率便會急速下 降。此主要原因可列舉為，當加熱溫度超 膠於到料孔UW之錢㈣化。 又，較好為將加熱時間設定為1分鐘以上之時間的理由， 參照圖14及圖15即可日日涵l _ 瞭。圖14係表示將加熱溫度設定為 (固定），改變加熱時間時積層型壓電元件1 (與圖13之 情形相同者）之良率的圖· — 圖，圖15係表示將加熱溫度設定為 C(固定）’改變加熱時間時積層型壓電元件1之良率的 圖由圖14及圖15可知：加熱時間為1分鐘以上之時間時， 良率超過9G%，^而未滿！分鐘時，良率則急劇下降。其主 要原因可列舉為，當加熱時間未滿1分鐘時，導電糊勝到連 通孔U内之下端部之前加熱步驟便已結束。另夕卜，加熱時 、長曰、成作業效率降低，因此於本實施形態中，較好 為將加熱時間設定為1分鐘〜3分鐘範圍之時間。 (第4實施形態） 91940.doc -24- 1334662 其次，參照圖16至圖丨7,作為本發明第4實施形態之陶是 元件的製造方法及製造系統，說明上述積層型壓電元件i 的製造方法及製造系統。 於本實施形態中，與上述第1實施形態相同，係經過陶瓷 板形成步驟、熱處理步驟、通孔形成步驟、第丨印刷步驟、 加熱步驟、第丨乾燥步驟、第2印刷步驟、第2乾燥步驟、疊 層步驟、壓製步驟以及完成步驟而製造積層型壓電元件工。 繼而，說明本實施形態之陶瓷元件的製造系統之運作， 並且說明通孔形成步驟、第1印刷步驟及第2印刷步驟。另 外，如圖17所示，製造系統60包含雷射加工裝置（通孔形成 機構）38、網版印刷裝置（印刷機構）39及位置關係檢測裝置 (檢測機構）61。 如圖16(a)所示，於通孔形成步驟中，藉由衝孔裝置37以 分別於未加工陶板34之一方外緣部形成兩個，於另一方外 緣部形成一個之方式而形成有三個位置基準穴（第i標 記）45。繼而，形成通孔13時，藉由設置於各位置基準穴45 上方之CCD攝像機46a (包含於雷射加工裝置3 8)，攝像各位 置基準穴45。依據此所攝像之圖像資料，移動載膜32及未 加工陶板34以形成定位，於未加工陶板34之特定位置上形 成有通孔13。如此，於通孔形成步驟中，藉由雷射加工裝 置38 ’以位置基準穴45為位置基準使通孔13形成於未加工 陶板34上。 另外’於圖16中，為使其更加明瞭化，僅表示一個通孔 13,然而實際上未加工陶板34上形成有多數個通孔8、13。 91940.doc -25- 〃如上所冑位置基準穴45之形成位置並非限定於於之 後的切斷步驟中成為廢材之未加工陶板Μ的外緣部當載 膜32之外緣部上存在未形成有未加工陶板34的空白部時亦 可為該空白部。 繼而如圖16 (b)所示，於第1印刷步驟中，將導電糊膝 充填印刷於通孔13内時，係藉由設置於各位置基準穴45上 方之CCD攝像機顿（包含於網版印刷裝置39)，攝像各位置 基準穴45。依據此所攝像之圖像資料移動載膜32及未加 =陶板34以形成定位，於未加工陶板34之特定位置，以覆 處通孔13之#侧之方式印刷有含有該通孔之基底圖案 (導電圖案)47。此¥，藉由相同製版，同時印刷有三個印刷 標記（第2標記）48。此印刷標記48於未加工陶板取一方外 緣部形成—個，於另-方之外緣部形成兩個。 繼而’如圖16 (c)所示，於第2印刷步驟中，冑成為單體 電極2等之電極圖案49進行印刷時，藉由設置於各位置基準 穴45及各印刷標記48之上方的CCD攝像機(包含於位置 關係檢測裝置61)，攝像各位置基準穴45及各印刷標記48。 而且，於位置關係檢測裝置61中，依據所攝像之圖像資料， 檢測出位置基準穴45與印刷標記48之於χ_γ座標系上的位 置關係。 藉由此位置關係之檢測，例如，若印刷標記48相對於位 置基準穴45於Y軸方向產生位置偏移時，則基底圖案47相對 於通孔13亦於Y軸方向產生位置偏移（參照圖16(c))。即，可 藉由檢測位置基準穴45與印刷標記48之於χ_γ座標系上的 91940.doc -26- 1334662 位置關係，計算出基底圖案47之相對於通孔13的位置偏移。 藉此，當基底圖案47相對於通孔13產生位置偏移時，可 依據位置基準穴45與印刷標記48之間的位置關係移動載膜 32及未加工陶板34,以電極圖案49確實包含基底圖案ο之 方式而形成未加工陶板34之定位。又，依據位置基準穴杉 與印刷標記48之間的位置關係，反饋控制第丨印刷步驟中未 加工陶板34之定位，校正新基底圖案47之相對於未加工陶 板34的位置偏移。 另外，作為第2印刷步驟中之定位方法，並非僅限於使電 極圖案49與基底圖案47吻合。如，亦可使電極圖案49與通 孔13吻合，或亦可使電極圖案49與基底圖案〇之相對於通 孔13的位置偏移之中間位置吻合。 如此，藉由檢測出位置基準穴45與印刷標記48之位置關 係，當基底圖案47相對於通孔13產生位置偏移時，於第2 印刷步驟中，可校正電極圖案49之相對於基底圖案47的形 成位置；又，於第1印刷步驟中，藉由反饋控制，可校正基 底圖案47之相對於通孔13的形成位置。並且，當相對於通 孔13之基底圖案47的位置偏移大於特定值而不可使用時， 可判定形成有該基底圖案47之未加工陶板34為不良，並即 刻將其篩除以避免以後流入下一步驟。更且，於疊層步驟 中，依據位置基準穴45與印刷標記48之間的位置關係，可 將未加工陶板34a高精度疊層。 依據以上内容，根據本實施形態之陶瓷元件的製造方法 及製造系統，可提高相對於通孔13之基底圖案47以及電極 91940.doc -27· 1334662 圖案49等的位置精度 3、5之上面側與下面 壓電元件1。 "T裝造出介以通孔8、13於壓電體層 側之間確實形成電氣性連接的積層型 「繼而’依據本實施形態之陶莞元件的製造方法，製作於 「l〇mmx30_，厚度為3〇卿」之屋電體層$的上面形成 有三百個（4列75行）單體電極2之積層型星電元件卜得到如 下結果。即，與依據位置基準六45與印刷標記48 置關係進行定位之情形相比，依據其中任一方進行定 情形時’通孔8、13中產生之連接不良均增加3〇%之多。又 依據位置基準穴45與印刷標記48之間的位置關係進行定位 之情形時，各壓電體層3、5之相對疊層偏移可控制為2〇_ 以下，而依據其中任一方進行定位之情形時，各壓 3、5之相對疊層偏移為平均5〇/im。 曰 本發明並非僅限於上述實施形態。例如，作為& 標記’只要係可檢測出其形成位置者，即可相。因此， 第1標記並非僅限於上述實施形態中之貫通穴， 或印刷標記等A標記之形成對象亦非僅限於未加工陶 等之陶竞原材料，只要係載膜等之保持構件即可。又 及第2標記之形狀亦並非限於上述實施形態中之圓^ 1 =線狀或十字形等。另外，第1及第2標記之形狀 情形下，若分別形成兩個，可檢測出第t標記與 的2次元位置關係’然而如上述實施形態，若分二0 以上時’便可進—步提高位置關係、之檢測精度。乂 一個 【圖式簡單說明】 9l940.doc -28- 1334662 圖1係藉由本發明之實施形態的陶瓷製造方法及製造系 統所製造之積層型壓電元件的分解立體圖。 圖2係自與圖1所示之積層型壓電元件的長度方向直交之 方向所見的放大剖面圖》 圖3係表示本發明之第i實施形態中之陶板成形步驟之概 念圖。 圖4係表示本發明之第丨實施形態中之熱處理步驟之概念 圖。 圖5係表示本發明之第丨實施形態中之通孔形成步驟之概 念圖。 圖6係表示本發明之第1實施形態中之第1印刷步驟、加熱 步驟以及第1乾燥步驟之概念圖。 圖7係表示本發明之第1實施形態中之疊層步驟之概念 圖。 圖8係表示本發明之第2實施形態中之通孔形成步驟中雷 射光照射時的狀態之概念圖。 圖9係表示本發明之第2實施形態中之通孔形成步驟中雷 射光照射後的狀態之概念圖。 圖10係表示藉由雷射光照射之通孔形成狀態之比較結果 的圖。 圖U係表示本發明之第3實施形態中之第1印刷步驟實施 後之未加工陶板的剖面圖。 圖12係表示本發明之第3實施形態中之第1乾燥步驟實施 後的未加工陶板之剖面圖。 91940.doc -29- i334662 圖13係表示本發明之第3實施形態的加熱步驟中，將加熱 時間設為2分鐘（固定）使加熱溫度變化之情形下之積層型壓 電元件的良率之圖表。 圖14係表示本發明之第3實施形態的加熱步驟中，將加熱 ’嚴度設為25。(：（固定）使加熱時間變化之情形下之積層型壓 電元件的良率之圖表。 •係表示本發明之第3實施形態的加熱步驟中，將加熱 温度設為5(TC(固定）使加熱時間變化之情形下之積層型壓 電元件的良率之圖表。 概二6係用以說明本發明之第4實施形態中之定位方法的 矣^ (a)表不通孔形成步驟’⑻表示第1印刷步驟，（c) 表不第2印刷步驟。 娜 圖17係表示本發明之第 方塊圖。 第4實鈿形態的製过系統之構成的 【圖式代表符號說明】 1 2 積層型壓電元件 3 單體電極 壓電體層 4 共通電極 : 壓電體層 中繼電極 7 壓電體層 8The first shot is irradiated at a frequency of 30 kHz, a pulse width of 210 nsec, and a flat output of S human T. Then according to the thickness of the unprocessed pottery plate 3 4, 9194〇.d〇c -19- 1334662 or! And the number of shots irradiated to a specific position of the unprocessed ceramic plate 34 (that is, the number of repeated shots of the laser in the case where the oscillation is caused by Q switching), so that the through holes 13 are formed in the unprocessed ceramic plate 34, Further, the holes formed in the carrier film 32 by melting or the like are below a certain depth. In the present embodiment, for the unprocessed ceramic plate 34 having a thickness of 40 μm and having the following composition, the composition is mainly composed of (Pb 0.97 Sr 0.03) [Ti 0.465 Zr 〇 535] 〇 3 and is mainly 1 mol. 0.5% by mass of the component was added as the subcomponent 2Nb2〇5, and the number of times of emission was set to 30 times to irradiate the laser light L. By the irradiation of the laser light L as described above, as shown in Fig. 9, the irradiation portion of the laser light L on the unprocessed ceramic sheet is melted and evaporated to form the through hole 13, and almost no accumulation of scattered matter is formed around the through hole 13. Since <, the clogging of the through hole 13 caused by the scattered matter can be prevented, so that the conductive member 14 can be surely formed in the through hole 13 by performing screen printing of the conductive paste into the through hole 13. In general, if the through hole is formed by the irradiation of the laser light, the shape of the through hole becomes a conical shape in which the bottom portion is enlarged on the side of the incident light surface of the laser beam, but the laser light 1 is pulse-oscillated by, for example, Q switching, thereby suppressing the passage. The hole is enlarged to a conical shape. In the present embodiment, the diameter of the lower surface side of the through hole 13 is 4 〇 pm and the diameter of the upper surface side is about 50, so that the expansion of the upper surface side of the through hole ΐ 3 can be suppressed. Thereby, the single electrode 2 for forming the through hole 13 formed thereon can be made into a finer shape, and the high integration of the single electrode 2 or the miniaturization of the laminated piezoelectric element 1 can be achieved. Further, the conductive paste filled from the upper side of the unprocessed ceramic plate 34 into the through hole 13 is more likely to flow to the lower side, so that the conductive paste is surely spread throughout the through hole 13 up to the lower end portion thereof. 91940.doc -20- 1334662 Further, by performing the irradiation of the laser light as described above, the irradiation of the laser light is performed, and the damage of the carrier film 32 can be prevented. In the present embodiment, the damage depth of the carrier film 32 can be controlled to 18 μm or less. Thereby, it is possible to prevent the conductive paste filled in the through hole 13 from oozing from between the unprocessed ceramic plate and the carrier film 32 to the underside of the unprocessed ceramic plate 34. Further, since the damage of the carrier film is extremely small, in the other steps after the through hole forming step, 'the vacuum can be reliably applied to the carrier film 32', and the vacuum adsorption can prevent the carrier film 32 from being damaged or opened. Then, on the top of the piezoelectric layer 3 of 10 mm x 30 mm and having a thickness of 3 Å, a laminated piezoelectric element having three hundred (four columns and 75 rows) of individual electrodes 2 is formed, and the yield is calculated. The following results are obtained, that is, the yield in the case where the through hole is formed on the carrier film 32 by the laser light, the yield is less than 20/〇, and the damage depth of the carrier film 32 is 18 to 48 μm. In the case where the damage depth of the carrier film 32 is 〇 to 丨8, the yield is more than 90%. In addition, one hundred and forty laminated piezoelectric elements 1 are used as test objects, and only The case where the three hundred electrostatic capacitances corresponding to the single electrode 2 are normally obtained is used as a good product to calculate the yield. Next, a comparison result between the laser light irradiation and the other laser light irradiation in the above-described through hole forming step will be described. As shown in Fig. 10, in the case of a C〇2 laser (when the wavelength is 1〇6, a large amount of scattered matter due to laser light irradiation is accumulated around the through hole. Further, the fundamental wave (wavelength 1064 nm) of the γΑ〇 laser is continuously made. When (CW) oscillates, the through hole is greatly enlarged on the incident side of the laser light. When the fundamental wave of the YAG laser (wavelength 1064 nm) is pulse-oscillated by, for example, Q switching, the heat influence is large, and the diameter control of the hole of the 91940.doc -21 - Ϊ334662 hole is extremely difficult, and the processing of the deposit is also more In contrast, when the third harmonic of the YAG laser (wavelength 355 nm) is pulse-oscillated by Q switching (this embodiment), there is almost no accumulation of scattered matter around the via hole. The expansion of the incident surface side of the laser light is also suppressed and the second time of the YAG laser (wavelength 532 nm) is pulsed by Q switching, and the third harmonic of the YAG laser is obtained. The same effect is obtained when the wave is pulsed by Q switching. Based on the above comparison results, the following conclusion can be drawn: the laser light is preferably a laser light that is generated from the YAg laser and converted to a wavelength below 532 nm. As described above, according to the method of manufacturing a ceramic element of the present embodiment, the through holes 8 and 13 can be formed in the unprocessed ceramic plate 34 in the through hole forming step, and thus can be formed in the through holes 8 and 13. The conductive member 14 is indeed formed. For example, in each of the piezoelectric layers 3, the upper surface side single electrode 2 and the lower side relay electrode 16 can be reliably connected by the conductive member 14 in the through hole 13. Further, in each piezoelectric layer 5, The common electrode 4 on the upper side can be surely connected to the single electrode 2 on the lower side by the conductive member 14 in the through hole 8. Therefore, the through hole 8, U can be formed on the upper surface of the piezoelectric layer 3, 5. The laminated piezoelectric element 1 that is electrically connected between the side and the lower side is provided. (Third Embodiment) - Next, a method of manufacturing a ceramic element according to a third embodiment of the present invention will be described with reference to Figs. A method of manufacturing the above laminated piezoelectric element 说明 will be described. In the present embodiment, the same manner as in the above-described third embodiment is a Tauman sheet forming step, a heat treatment step, a through hole forming step, a second printing step, a heat step, a mth drying step, a second printing step, and a second drying. Step 91940.doc -22- 1334662 Step, step t, and completion of the step of manufacturing the layered component. Next, the first printing (four), the heating step, and the first drying step in the present embodiment will be described in more detail. ...^ As shown in Fig. 11, in the i-th printing step, on the upper surface 34a of the unprocessed ceramic plate 34, a conductive pattern 63 including the through holes 13 is formed. If the unprocessed ceramic plate 34 is placed in the drying oven 52 immediately after the printing step, the conductive paste does not naturally fall to the lower end portion of the through hole 13 and is solidified, which may become the original gj which causes a poor connection. However, in the present embodiment, the heating step is provided between the second printing step and the first drying step, so that such a connection failure can be prevented. That is, in the heating step, the unprocessed ceramic plate 34 is placed in the heating furnace 51 to be heated at a heating temperature lower than the drying temperature, and since the conductive paste which forms the conductive pattern (4) is softened, the conductive paste can be surely spread throughout the through hole. In the first drying step, the unprocessed ceramic plate 34 is placed in the drying oven 52 and heated at a drying temperature. Since the conductive paste is dried and solidified, as shown in FIG. The upper end of the hole 13 - the conductive member 14 which is directly connected to the lower end is surely formed in the through hole n. Thus, the conductive member 14 capable of surely realizing the electrical connection between the upper and lower sides of the unprocessed ceramic plate 34 is formed in the through hole 8 and 3, and thus the ceramic element according to the present embodiment According to the manufacturing method, the laminated piezoelectric element in which the through holes 8 and 13 are surely formed to electrically connect the upper side and the lower side of the piezoelectric layers 3 and 5 can be manufactured! . Further, in the above heating step, it is preferred to set the heating temperature to a temperature in the range of 25t 91940.doc -23 - 1334662 to 5 〇 ° C. The heating time is set to a time of 1 minute or longer. Further, the drying temperature in the first drying step is a temperature higher than 50 ° C (preferably 70 ° C or higher) and lower than 9 〇 t. ',, and here' is preferably set to a heating temperature of U25 ° C ~ 5 (the reason for the severity of the rc range can be seen with reference to Figure 13. (4) is expressed in ": dish 〇 mmx30 mm, thickness 3 When the laminated piezoelectric element 1 of the single electrode 2 is formed on the upper surface of the piezoelectric layer 3 of the crucible 3, the gate is sighed to two knives (fixed) when heated, and the lamination is changed when the heating temperature is changed. The graph of the yield of the piezoelectric element 1 is known by the ®13: when the heating temperature is 2rc~5 (the rate of the T' yield in the rc range is more than 9〇%), however, it will drop rapidly after exceeding the machine's yield. The reason for this is exemplified by the fact that the heating temperature is super-geled to the material hole UW. Further, the reason why the heating time is set to 1 minute or longer is preferable, and the day can be referred to with reference to Figs. 14 and 15 Fig. 14 is a diagram showing the yield of the laminated piezoelectric element 1 (the same as in the case of Fig. 13) when the heating temperature is set to (fixed), and Fig. 15 is a diagram showing The graph of the yield of the laminated piezoelectric element 1 when the heating temperature is changed to C (fixed) 'change of the heating time is shown in FIGS. 14 and 15 : When the heating time is 1 minute or longer, the yield exceeds 9G%, and when it is less than ! minutes, the yield drops sharply. The main reason is that when the heating time is less than 1 minute, the conductive paste wins. The heating step is completed before the lower end portion of the communication hole U. Further, the heating efficiency, the long shovel, and the working efficiency are lowered. Therefore, in the present embodiment, it is preferable to set the heating time to 1 minute to 3 minutes. (4th embodiment) 91940.doc -24- 1334662 Next, the above-mentioned laminated type pressure is described as a manufacturing method and manufacturing system of a ceramic according to a fourth embodiment of the present invention, with reference to FIG. 16 to FIG. In the present embodiment, the ceramic plate forming step, the heat treatment step, the through hole forming step, the second printing step, the heating step, and the third drying are performed in the same manner as in the first embodiment. The step, the second printing step, the second drying step, the laminating step, the pressing step, and the finishing step are performed to produce a laminated piezoelectric element. Next, the manufacturing of the ceramic element of the present embodiment will be described. The operation of the system will be described with reference to the through hole forming step, the first printing step, and the second printing step. Further, as shown in Fig. 17, the manufacturing system 60 includes a laser processing device (through hole forming mechanism) 38 and a screen printing device ( The printing mechanism 39 and the positional relationship detecting means (detecting means) 61. As shown in Fig. 16 (a), in the through hole forming step, the punching means 37 is formed in the outer edge portion of one of the unprocessed ceramic plates 34, respectively. Two, a position reference hole (i-th mark) 45 is formed in such a manner that the outer edge portion of the other side is formed. Then, when the through hole 13 is formed, the CCD camera 46a is disposed above the reference hole 45 at each position ( It is included in the laser processing device 38), and the reference point 45 is photographed at each position. Based on the image data thus captured, the carrier film 32 and the unprocessed ceramic plate 34 are moved to form a positioning, and a through hole 13 is formed at a specific position of the unprocessed ceramic plate 34. Thus, in the through hole forming step, the through hole 13 is formed on the unprocessed ceramic plate 34 by the laser processing device 38' with the position reference hole 45 as a positional reference. Further, in Fig. 16, in order to make it clearer, only one through hole 13 is shown, but actually, a plurality of through holes 8, 13 are formed in the unprocessed ceramic plate 34. 91940.doc -25- 形成 The position where the position reference hole 45 is formed as described above is not limited to the outer edge portion of the unprocessed ceramic plate which becomes the waste material in the subsequent cutting step, and there is no outer edge portion of the carrier film 32. The blank portion may be formed when the blank portion of the unprocessed ceramic plate 34 is formed. Then, as shown in FIG. 16(b), in the first printing step, when the conductive paste is filled and printed in the through hole 13, the CCD camera is disposed above the reference hole 45 at each position (included in the screen). The printing device 39) images the respective reference pockets 45. According to the captured image data, the carrier film 32 and the ceramic plate 34 are not added to form a positioning. At a specific position of the unprocessed ceramic plate 34, a substrate containing the through hole is printed on the side of the through hole 13 Pattern (conductive pattern) 47. This ¥, by the same plate making, is printed with three printed marks (second mark) 48 at the same time. The printed mark 48 is formed in one outer edge portion of the unprocessed ceramic plate and two at the outer edge portion of the other side. Then, as shown in FIG. 16(c), in the second printing step, when the electrode pattern 49 such as the single electrode 2 is printed, it is provided above each of the position reference holes 45 and the respective printing marks 48. The CCD camera (included in the positional relationship detecting device 61) captures each position reference hole 45 and each of the printing marks 48. Further, in the positional relationship detecting means 61, the positional relationship between the position reference hole 45 and the printing mark 48 on the χ_γ coordinate system is detected based on the image data to be imaged. By detecting the positional relationship, for example, when the printing mark 48 is displaced in the Y-axis direction with respect to the position reference hole 45, the base pattern 47 is also displaced in the Y-axis direction with respect to the through hole 13 (refer to Figure 16 (c)). That is, the positional deviation of the base pattern 47 with respect to the through hole 13 can be calculated by detecting the positional relationship between the position reference hole 45 and the printed mark 48 on the χ_γ coordinate system of 91940.doc -26-1334662. Thereby, when the base pattern 47 is displaced relative to the through hole 13, the carrier film 32 and the unprocessed ceramic plate 34 can be moved according to the positional relationship between the position reference hole 45 and the printing mark 48, so that the electrode pattern 49 does include the substrate. The pattern ο is formed to form the location of the unprocessed slab 34. Further, depending on the positional relationship between the position reference cedar and the printed mark 48, the position of the unprocessed slab 34 in the second printing step is feedback-controlled to correct the positional shift of the new base pattern 47 with respect to the unprocessed slab 34. Further, the positioning method in the second printing step is not limited to the matching of the electrode pattern 49 and the base pattern 47. For example, the electrode pattern 49 may be coincident with the through hole 13, or the electrode pattern 49 may be aligned with the intermediate position of the base pattern 相对 with respect to the positional deviation of the through hole 13. Thus, by detecting the positional relationship between the position reference hole 45 and the printing mark 48, when the base pattern 47 is displaced relative to the through hole 13, in the second printing step, the electrode pattern 49 can be corrected relative to the base pattern. Further, in the first printing step, the position of the base pattern 47 with respect to the through hole 13 can be corrected by feedback control. Also, when the positional deviation with respect to the base pattern 47 of the through hole 13 is not more than a specific value, it can be judged that the unprocessed ceramic plate 34 on which the base pattern 47 is formed is defective, and is immediately sieved to avoid inflow later. The next step. Further, in the laminating step, the unprocessed ceramic plate 34a can be laminated with high precision in accordance with the positional relationship between the position reference hole 45 and the printing mark 48. According to the above, according to the method and the manufacturing system of the ceramic element of the present embodiment, the positional accuracy 3, 5 of the base pattern 47 and the electrode 91940.doc -27· 1334662 pattern 49 of the through hole 13 can be improved. With the piezoelectric element 1 below. <T is a laminated type in which the through holes 8 and 13 are electrically connected to each other between the piezoelectric layer sides. Then, the manufacturing method of the ceramic component according to the present embodiment is produced in "l〇mmx30_, A laminated star-shaped electric component having three hundred (four columns and 75 rows) of single-electrode electrodes 2 formed on the surface of the electric layer $ of the thickness of the house is obtained as follows. That is, compared with the case where the positioning is performed in accordance with the position reference six 45 and the printing mark 48, the connection failure occurring in the through holes 8 and 13 is increased by as much as 3% by the case of either of them. Further, when the positioning is performed according to the positional relationship between the position reference hole 45 and the printing mark 48, the relative lamination offset of each of the piezoelectric layers 3, 5 can be controlled to be 2 〇 or less, and positioning is performed according to either one. In the case, the relative stack offset of each of the pressures 3, 5 is an average of 5 〇/im.曰 The present invention is not limited to the above embodiment. For example, the & mark ' can be phased as long as it can detect the position at which it is formed. Therefore, the first mark is not limited to the through hole in the above-described embodiment, and the object to be formed by the A mark such as the printed mark is not limited to the ceramic material of the unprocessed pottery or the like, and may be a holding member such as a film. Further, the shape of the second mark is not limited to the circle 1 = linear shape or cross shape in the above embodiment. Further, in the case of the shape of the first and second marks, if two are formed separately, the relationship between the t-th mark and the second-order position can be detected. However, as in the above embodiment, if it is divided into two or more, it can be advanced. Improve positional relationship and detection accuracy. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an exploded perspective view of a laminated piezoelectric element manufactured by a ceramic manufacturing method and a manufacturing system according to an embodiment of the present invention. Fig. 2 is an enlarged cross-sectional view showing a direction orthogonal to the longitudinal direction of the laminated piezoelectric element shown in Fig. 1. Fig. 3 is a conceptual view showing a step of forming a ceramic plate in the i-th embodiment of the present invention. Fig. 4 is a conceptual view showing a heat treatment step in the third embodiment of the present invention. Fig. 5 is a conceptual view showing a through hole forming step in the third embodiment of the present invention. Fig. 6 is a conceptual diagram showing a first printing step, a heating step, and a first drying step in the first embodiment of the present invention. Fig. 7 is a conceptual diagram showing a lamination step in the first embodiment of the present invention. Fig. 8 is a conceptual diagram showing a state in which laser light is irradiated in the through hole forming step in the second embodiment of the present invention. Fig. 9 is a conceptual diagram showing a state after the irradiation of the laser light in the through hole forming step in the second embodiment of the present invention. Fig. 10 is a view showing a comparison result of formation states of through holes irradiated by laser light. Figure U is a cross-sectional view showing an unprocessed ceramic plate after the first printing step in the third embodiment of the present invention. Fig. 12 is a cross-sectional view showing the unprocessed ceramic plate after the first drying step in the third embodiment of the present invention. 91940.doc -29-i334662 FIG. 13 is a graph showing the yield of the laminated piezoelectric element in the case where the heating time is changed to 2 minutes (fixed) and the heating temperature is changed in the heating step of the third embodiment of the present invention. chart. Fig. 14 is a view showing a heating degree of 25 in the heating step in the third embodiment of the present invention. (: (fixed) graph showing the yield of the laminated piezoelectric element in the case where the heating time is changed. ・ In the heating step of the third embodiment of the present invention, the heating temperature is set to 5 (TC (fixed)) A graph showing the yield of the laminated piezoelectric element in the case where the heating time is changed. Fig. 6 is a diagram for explaining the positioning method in the fourth embodiment of the present invention. (a) Table through hole forming step '(8) The first printing step is shown, and (c) the second printing step is shown. Natu 17 shows the block diagram of the present invention. The fourth embodiment shows the structure of the system. Piezoelectric element 3 single electrode piezoelectric layer 4 common electrode: piezoelectric layer relay electrode 7 piezoelectric layer 8
通孑L 壓電體層 91940.doc *30- 1334662 13 14 16 17 18 19 21 31 32 33 34 34a 34b 36 37 38 39 41 43 45 46a ， 46b ， 46c 47 48 49 通孔 導電構件 中繼電極 外部電極 外部電極 共通電極 活性部 罐槽 載膜 捲轴 未加工陶板 未加工陶板之上面 未加工陶板之下面 加熱爐 衝孔裝置 雷射加工裝置 網版印刷裝置 拾取裝置 載物台 位置基準穴 攝像機 基底圖案 印刷標記 電極圖案 91940.doc -31 - 1334662 51 加 熱 爐 52 乾 燥 爐 60 製 造 系 統 61 位 置 關 係檢測裝置 63 導 電 圖 案 91940.doc - 32 -Through-L piezoelectric layer 91940.doc *30- 1334662 13 14 16 17 18 19 21 31 32 33 34 34a 34b 36 37 38 39 41 43 45 46a , 46b , 46c 47 48 49 Through-hole conductive member relay electrode external electrode External electrode common electrode active part tank grooved film reel unprocessed ceramic plate unprocessed ceramic plate above unprocessed ceramic plate lower furnace punching device laser processing device screen printing device pickup device stage position reference hole camera base pattern printing Marker electrode pattern 91940.doc -31 - 1334662 51 Heating furnace 52 Drying furnace 60 Manufacturing system 61 Position relationship detecting means 63 Conductive pattern 91940.doc - 32 -