TW200419748A - Under bump metallurgy and flip chip - Google Patents

Under bump metallurgy and flip chip Download PDF

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TW200419748A
TW200419748A TW092106131A TW92106131A TW200419748A TW 200419748 A TW200419748 A TW 200419748A TW 092106131 A TW092106131 A TW 092106131A TW 92106131 A TW92106131 A TW 92106131A TW 200419748 A TW200419748 A TW 200419748A
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layer
titanium
composition
barrier layer
patent application
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TW092106131A
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TW583759B (en
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Min-Lung Huang
Chi-Long Tsai
Chao-Fu Weng
Ching-Huei Su
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Advanced Semiconductor Eng
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Priority to US10/708,664 priority patent/US20040183195A1/en
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Publication of TW200419748A publication Critical patent/TW200419748A/zh

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【發明所屬之技術領域】 200419748 本餐月疋有關於一種球底金屬層（Under Bump llurgy ’UBM )及覆晶晶片（ρπρ Chip，F/C )結 ^ t $別疋有關於一種能有效改善晶片之鮮塾與凸塊間 之接。施力的球底金屬層及應用此球底金屬層之覆晶晶片 【先前技術】 、在呵度貢訊化社會的今曰，多媒體應用的市場不斷地 急速擴張著。積體電路封裝技術亦需配合電子裝置的數位 化、、網路化、區域連接化以及使用人性化的趨勢發展。為 ^成上述的要求，必須強化電子元件的高速處理化、多功 月^化、積集化、小型輕量化及低價化等多方面的要求，於 疋積體電路封裝技術也跟著朝向微型化、高密度化發展。 其中’球格陣列式構裝（Ball Grid Array，BGA )、晶片 尺寸構裝（Chip-Scale Package，CSP )、覆晶晶片構裝（ Flip Chip，F/C )以及多晶片模組（Multi—Chip Module ’ MCM )等高密度積體電路封裝技術也應運而生。 承上所述’覆晶晶片構裝（F / C )之覆晶接合技術（ Flip Chip Interconnect Technology )主要係將晶片（ die )之夕個I亍塾（pad ) ’利用面陣列（area array )的 排列方式’配置於晶片之主動表面（aCtiVe surface ) 上，並在各個銲墊上分別依序形成球底金屬層（Under Bump Metallurgy，UBM )及凸塊（bump )，例如銲料凸塊 (solder bump )，接著將晶片翻面（flip)之後，再利用
10545twf.ptd 第7頁 200419748 五、發明說明（2) 一 凸塊來連接至基板（substrate )或印刷電路板（pcb )之 表面的接點。值得注意的是，由於覆晶接合技術係可適用 於高接腳數（High Pin Count )之晶片封裝結構，並具有 縮小封裝面積及縮短訊號傳輪路徑等優點，使得覆晶接合 技術已被廣泛地應用在晶片封裝結構，且特別是高腳位之 晶片封裝結構。 △第1圖繪示為習知一種覆晶晶片結構的剖面示意圖。 請參閱第1圖所示，覆晶晶片結構1 〇 〇係由一晶片J i 〇、一 球底金屬層120及多個凸塊13〇(圖中僅繪示其一）所構成。 其中’晶片110具有一主動表面U2、一保護層114( passivation )及多個銲墊116(圖中僅繪示其一）。上述之 主動表面112係泛指晶片11〇之具有主動元件（active device )的一面，而保護層114及銲墊116均配置於此主動 表面1 1 2上，且保護層11 4係暴露出銲墊11 6。此外，球底 金屬層120係配置於銲墊116與凸塊130之間，用以作為銲 墊11 6及凸塊1 3 0之間的接合介面。值得注意的是，由於錫 或錫-鉛合金具有較佳之焊接特性，所以，凸塊丨3 〇之材質 經常採用錫或錫-錯合金。而錫—錯合金中之錯對於自然環 士兄的影響甚鉅’故又有無錯銲料（lead free solder)之誕 生，但是不論上述含鉛或無鉛之銲料其組成成分中皆包括 有錫金屬。 請繼續參閱第1圖，習知之球底金屬層120主要包括一 黏者層（adhesion layer)122、*阻障層（barrier layer) 124及一沾錫層（wetting layer)126。其中，黏著層122係
200419748 五、發明說明（3) 用以增加銲墊1 1 6及阻障層1 2 4之間的接合強度，其材質例 如為鈦金屬。此外，阻障層1 2 4係用以阻障凸塊1 3 0之擴散 (di f fusion)反應，其常用材質例如為鎳-釩合金。另外， 沾錫層1 2 6係用以增加球底金屬層1 2 0對於凸塊1 3 0之沾附 能力，其常用材質例如是銅金屬。故由上述可得知，習知 之球底金屬層一般採用鈦/鎳-釩合金/銅之三層結構。
值得注意的是，當上述之球底金屬層丨2 〇的沾錫層1 2 6 的組成成分為銅時，在高溫反應下，由於銅層會與凸塊 1 3 0中之錫以及快速度反應生成錫銅介金屬化合物 (Inter-Metal lie Compound，IMC)，故錫可容易再擴散至 阻障層124 (即鎳-釩層）中，並與鎳—釩合金反應產生錫 鎳介金屬化合物，其為不連續塊狀結構，當黏著層為鋁 時，由於此錫鎳介金屬化合物與鋁層接合甚差，凸塊丨3 〇 易於從此介面脫落。 【發明内容】 、、因此，本發明的目的就是在提供一種球底金屬層，其 能減緩介金屬化合物之生長速度。 = 一目的就是在提供一種覆晶晶片結構，其 月b有放改善曰S片之銲墊與凸塊之間的接合能力。 基於本發明之上述目的，本發明提 層，適於改善晶片之銲墊及凸塊之間的接合能力&且此凸 ί ί ί成f分t包括錫。本發明之球底金屬層主要係由- ;層:己置：ίί:以及一沾附—阻障層所構成。其中，黏 者曰配置於！于墊上，阻障層配置於黏著層上，而沾附一阻
200419748 五、發明說明（4) 障層則配置於卩日# @ 成成分例如為：：：及凸塊之間，且此沾附-阻障層之組 結構,此覆曰f二士述目的’本發明再提出-種覆晶晶片 及-凸塊所構成。”，二球底金屬層以 及多個鲜，，保護層及這護層 保護層係異兩1、 千！白配置於主動表面上，且 層、-阻障：以銲墊。球彡金屬層主要係由-黏著 配置於銲塾2 ，立沾附—阻障層所構成。其中，黏著層 則配置於阻障厗=障層配置於黏著層上，而沾附-阻障層 分例如為鎳金』=塊之間，且此沾附'阻障層之組成成 組成成分包括‘塊配置於沾附—阻障層上，且凸塊之 成分♦n明的較佳實施例所述，上述之黏著層之組成 紹或銅等：Γί?1合金、鉻、氮化鈦、氮化組、麵、 分例如為當銲塾為紹銲塾，黏著層之組成成 等金屬，A Α 鎢合金、鉻、氮化鈦、氮化鈕、钽或鋁 鈦、鈦〜被人§銲墊為銅銲墊，黏著層之組成成分例如為 此外 、、、σ金、鉻、氮化鈦、氮化鈕、鈕或鋼等金屬。 此外仿上述阻障層之組成成分例如是鎳-飢合金。 可配晉11 ΐ明的較佳實施例所述，沾附—阻障層上例如 几氧化層，而此抗氧化層之組成成分例如為金。 塊ft明因選用鎳金屬層與含錫凸塊接合，用以減緩凸 可長睡pg 1擴散反應，以降低介金屬化合物生長速度，故 a +維持凸塊與銲墊之間的接合強度，進而提高覆
200419748 五、發明說明（5) 晶晶片結構的使用壽命。 翻旦2讓本發明之上述和其他目的、特徵、和優點能更明 ”、、f懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細况明如下： 【實施方式】 苐^圖^會示依照本發明一較佳實施例之覆晶晶片結構 j，面不意圖。請參閱第2圖，覆晶晶片結構2 00主要係由 二晶片21〇、一球底金屬層220及多個凸塊2 3〇(圖中僅繪示 =)所構成。其中，晶片21〇具有一主動表面212、一保 濩層214及多個銲墊216(圖中僅繪示其一）。上述晶片以^ 之，動表面212係泛指晶片210之具有主動元件的一面，而 保護層214及銲墊216均配置於此主動表面212上，且保護 層214係暴露出銲墊216。值得注意的是，晶片21〇之組成 成分可包括矽、鍺、矽鍺、鎵砷、鎵磷、銦砷、銦磷等半 導體材料，而保護層2 1 4之組成成分可包括無機化合物， 例如為氧化矽（silicon oxide)、氮化矽（siiic〇n ni tride)、磷矽玻璃（phosphosi licate glass，PSG)等。 當f ’保護層214亦可以是由上述之無機化合物材質所交 互疊合而成之複合層。此外，銲墊216例如為鋁銲墊、銅 銲墊或鋁-銅合金銲墊等。另外，球底金屬層22()係配置於 在f*墊216與鋒料凸塊230之間，用以作為鋅墊216及凸塊230 之間的接合介面。 承上所述，凸塊230之材質可例如是錫或錫-鉛合金。 當然，凸塊230之材質亦可為無鉛材質，例如是錫-銅合
200419748
金#人錫八銻合金、锡—鉍合金、錫—銦合金、錫-辞合金、錫 -銀5孟u—銀合金、錫n弟合金、锡-絲―辞合 ί :=曰鉍—銦合金或錫—銀—銅合金等。值得注意的是，本 I 疋針對含錫之凸塊23〇而提供對應之球底金屬層 220，用以減緩介金屬化合物之生長速度。 =黯續參閱第2圖所示，球底金屬；22〇主要係由一黏 者層222，一阻障層224及一沾錫—阻障層（㈣^丨叫一 barrier layer)226所構成。黏著層222配置於銲墊216
^，且黏著層222之組成成分可包括鈦、鈦—鎢合金、鉻、 =化鈦、氮化鈕、鈕、鋁、銅或甚至可以由上述材料所組 b而成之複合層。其中，當銲墊216為鋁銲墊，黏著層222 之組成成分則例如是鈦、鈦—鎢合金、鉻、氮化鈦、氮化 =、钽或鋁，而當銲墊216為銅銲墊，黏著層222之組成成 分例如，鈦、鈦—鎢合金、鉻、氮化鈦、氮化鈕、鈕或 銅黏著層222之主要作用乃是提供球底金屬層220與銲墊 216間具有較佳的接合性，其可利用濺鍍（3叫1^6^叫）或 是電鍵/無電電鍍的方式形成於晶片21()之銲墊216上。
阻障層2 2 4係配置於黏著層2 2 2上，且阻障層2 2 4之組 成f分例如是鎳—釩合金。此外，阻障層224亦可利用濺鍍 或是電艘/無電電鍍的方式形成於黏著層222上。 沾錫-阻障層226係配置於阻障層224與凸塊230之間， 其主要作用係在於提供球底金屬層220與凸塊230之間較佳 的接合性’而沾錫—阻障層2 2 6之組成成分包括錦，並同樣 可利用丨賤鑛或是電鍍/無電電鍍的方式，將沾錫—阻障層
200419748
226形成於阻障層224上。 故彳足上可得知，本發明 鎳-飢合金/鎳、鈦—鶴合金/ /鎳、氮化鈦/鎳-釩合金/鎳 鎳-釩合金/鎳、鋁/鎳—釩合 層結構。 ° 之球底金屬層2 2 0可例如為 錄-飢合金/錄、絡/錄-銳合金 、氮化纽/錄-鈒合金/鎳、组/ 金/錄、銅/錄-凱合金/鎳的二 、明繼績芩閱第2圖所示，由於沾錫—阻障層2 2 6之組成 f分包$鎳（即採用一鎳層），其與凸塊23〇中之錫反應 k，除能保持球底金屬層22〇對於凸塊23〇之間的沾附效果 外，並能有效減緩凸塊230中之錫的擴散現象，換言之， 沾錫-阻障層2 2 6即兼具了沾附及阻障之雙重效果。藉此， 可提南凸塊230與銲墊216之間的接合強度，進而提高覆晶 晶片2 0 0結構的使用壽命。 第3圖為本發明之另一較佳實施例之覆晶晶片結構的 剖面示意圖。請參閱第3圖所示，其中此覆晶晶片結構2 〇 〇 中之晶片210與凸塊230皆與第2圖相同，已詳細說明於上 文，故在此即不再多作贅述，而其不同處為球底金屬層 2 2 0增加配置一抗氧化層2 2 6，係配置於沾錫—阻障層2 2 6 上，其組成成分例如為金，藉由此抗氧化層2 2 6與外界隔 絕，係可避免球底金屬層2 2 0在與凸塊2 3 0焊接之前，球底 金屬層220之沾錫—阻障層226上產生一原生氧化層（native oxide)，而需要額外增加一道去除此氧化層之步驟，故可 縮短覆晶晶片在凸塊製程進行時所耗費的時間。 綜上所述，本發明之球底金屬層及覆晶晶片結構，至
10545twf.ptd 第13頁 200419748 五、發明說明（8) 少具有下列優點： 1. 由於本發明之沾錫-阻障層採用鎳層，其與凸塊中 之錫反應慢，除能保持對於凸塊之間的沾附效果外，並能 有效減緩介金屬化合物之生長速度，且兼具阻障的效果。 2. 由於本發明之沾錫-阻障層上配置有一抗氧化層， 可避免球底金屬層上產生原生氧化層，故不需要額外增加 一道去除原生氧化層之步驟，可進一步縮短覆晶晶片製程 的時間。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 _ 神和範圍内，當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者為準。
10545twf.ptd 第14頁 200419748 圖式簡單說明 第1圖為習知一種覆晶晶片結構的剖面示意圖； 第2圖為本發明之較佳實施例之覆晶晶片結構的剖面 示意圖；以及 第3圖為本發明之另一較佳實施例之覆晶晶片結構的 剖面示意圖。 【圖式標示說明】 1 0 0、2 0 0 :覆晶晶片結構 1 1 0 、2 1 0 :晶片 112、212:主動表面 1 1 4、2 1 4 :保護層 1 1 6、2 1 6 :銲墊 120、220 :球底金屬層 122、222 :黏著層 1 2 4、2 2 4 :阻障層 1 2 6 :沾錫層 1 3 0、2 3 0 :凸塊 2 2 6 :沾錫-阻障層 2 2 8 :抗氧化層
10545twf.ptd 第15頁

Claims (1)

  1. 200419748 六、申請專利範圍 ' " ""----- 1 種球底金屬層，適於改善一晶片之一銲墊及一凸 塊之間的接合能力，其中該凸塊之組成成分包括锡，該球 底金屬層包括： 一黏著層，配置於該銲墊上； 一阻障層，配置於該黏著層上；以及 一沾附-阻障層，配置於該阻障層及該凸塊之間，且 該沾附—阻障層之組成成分包括鎳。 2 ·如申請專利範圍第1項所述之球底金屬層，其中該 黏著層之組成成分包括鈦、鈦—鎢合金、鉻、氮化鈦、氮 化组、、|呂及銅其中之一。 _ 3 ·如申請專利範圍第1項所述之球底金屬層，其中該 該銲墊為鋁銲墊，且該黏著層之組成成分包括鈦、鈦—鎢 合金、鉻、氮化鈦、氮化鈕、钽及鋁其中之一。 4·如申請專利範圍第1項所述之球底金屬層，其中該 5亥麵*墊為銅銲墊，且該黏著層之組成成分包括鈦、鈦〜鶏 合金、鉻、氮化鈦、氮化鈕、鋁及銅其中之一。 5 ·如申請專利範圍第1項所述之球底金屬層，其中該 阻障層之組成成分包括鎳—釩合金。 6 ·如申請專利範圍第1項戶斤述之球底金屬層，更包括 一抗氧化層，該抗氧化層配置於該沾附-阻障層及該凸塊 · 之間。 曰 7 ·如申請專利範圍第6項所述之球底金屬層，其中該 抗氧化層之組成成分包括金。 8. —種覆晶晶片結構，包拍r :
    200419748
    六、申請專利範圍 一晶片，具有一主動表面、一保護層及複數個銲墊， 其中该保護層及该些銲墊配置於該主動表面上，且該保護 層係暴露出該些銲墊； 一球底金屬層，包括. 一黏著層，配置於該些銲墊上； 一阻障層，配置於該黏著層上； 一沾附-阻障層，配置於該限障層上，且該沾附-阻 障層之組成成分包括錄；以&
    一凸塊，配置於該沾附〜障障層上，且該凸塊之組成 成分包括錫。 9 ·如申請專利範圍第8項所述之覆晶晶片結構，其中 該黏著層之組成成分包括敎、I太—鶬合金、鉻、氮化鈦、 氮化钽、钽、鋁及銅其中之一。 1 0 ·如申請專利範圍第8項戶斤述之覆晶晶片結構’其中 該銲墊為鋁銲墊，且該黏著層之組成成分包括鈦、鈦一鎢 合金、鉻、氮化鈦、氮化紐、銀及錫其中之一。
    1 1 ·如申請專利範圍第8項所述之覆晶晶片結構，其中 該銲墊為銅銲墊，且該黏著層之組成成分包括鈦、鈦一鎢 合金、鉻、氮化鈦、氮化鈕、鋥及銅其中之一。 1 2 ·如申請專利範圍第8項戶斤述之覆日日日日片結構，其中 該阻障層之組成成分包括鎳-釩合金。 1 3 ·如申請專利範圍第8項所述之覆晶晶片結構，更包 括一抗氧化層，該抗氧化層配f於該沾附_阻障層及該凸 塊之間。
    200419748 六、申請專利範圍 1 4.如申請專利範圍第1 3項所述之覆晶晶片結構，其 中該抗氧化層之組成成分包括金。
    10545twf.ptd 第18頁
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