TW200412219A - Method for forming high density bi-layer circuit board - Google Patents

Method for forming high density bi-layer circuit board Download PDF

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Publication number
TW200412219A
TW200412219A TW91137826A TW91137826A TW200412219A TW 200412219 A TW200412219 A TW 200412219A TW 91137826 A TW91137826 A TW 91137826A TW 91137826 A TW91137826 A TW 91137826A TW 200412219 A TW200412219 A TW 200412219A
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Taiwan
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layer
circuit board
manufacturing
line
blind hole
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TW91137826A
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Chinese (zh)
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TWI260960B (en
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I-Chung Tung
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Phoenix Prec Technology Corp
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Abstract

A method for forming high density bi-layer circuit board is proposed. An organic insulating layer is formed with at least a blind via therethrough, wherein the bottom end of the blind via is connected to a second conductive layer formed on a second surface of the circuit board. A seed layer is applied over a first surface of the circuit board and fully or partially covers the blind via. Then a patterned resist layer is applied over the seed layer and formed with at least an opening corresponding in position to the blind via. After a first conductive layer is formed within the blind via by an electrically chemical method, the resist layer and the seed layer underneath the resist layer are removed to form a high density bi-layer circuit board.

Description

200412219 五、發明說明(1) 【發明所屬之技術領域】 本發明係有關於一種高線路密度雙層電路板之製法, 亦是有關於一種用於製作增層式多增電路板之核心電路板 之製法,該雙層電路板之形成係利用一有機絕緣層,且在 其一表面上至少包含一導電層或電路層,在另一表面上則 利用半加成法(semi-additive process, SAP)形成電路 層,並在該雙層電路板之絕緣層形成有電性導通盲孔,以 提供該導電層之電性連接。 【先前技術】 電子產品輕小化已是長久以來眾所皆知之趨勢,如行 動電話、手提電腦、手提錄放影機或個人數位助理 (personal digital assistants)等。因此這些電子產 品之製作便需要使用比以前更小、更薄的電路板及電子元 件,而.隨著此縮小化之趨勢,各種不同功能之半導體元件 鑲嵌在一電路板上則有朝更高密度之需求。因此,對應用 上述更薄且高佈線密度之多層電路板於電子產品來說,電 路板之_製程與設計則將面臨更高之挑戰。 在電路板製造業界,低成本、高可靠度及高佈線密度 一直是所追求之目標。為達目標,於是發展出一種增層技 術(bu i 1 d-up)。所謂的增層技術基本上是指在一核心電 路板(core circuit board)表面上交互堆叠多層絕緣層及 導電層,再於絕緣層製作電性導通孔(v i a h ο 1 e s)以提 供各導電層間之電性連接。然而,增層電路板之數目可依 實際業界情況之所需堆疊超過1 0或2 0層之多。至今,增層200412219 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a high-line-density double-layer circuit board, and also relates to a core circuit board for manufacturing a multi-layer multi-layer circuit board. In the manufacturing method, the double-layer circuit board is formed by using an organic insulating layer and including at least a conductive layer or a circuit layer on one surface, and a semi-additive process (SAP) on the other surface. ) Forming a circuit layer, and forming an electrically conductive blind hole in the insulating layer of the double-layer circuit board to provide electrical connection of the conductive layer. [Previous technology] The miniaturization of electronic products has been a well-known trend for a long time, such as mobile phones, laptops, portable video recorders or personal digital assistants. Therefore, the production of these electronic products requires the use of smaller and thinner circuit boards and electronic components than before. With this trend of miniaturization, semiconductor components with various functions are mounted on a circuit board. The need for density. Therefore, for the application of the above-mentioned thinner and higher wiring density multi-layer circuit boards to electronic products, the process and design of circuit boards will face higher challenges. In the circuit board manufacturing industry, low cost, high reliability and high wiring density have always been the goals pursued. To achieve this goal, a layering technology (bu i 1 d-up) was developed. The so-called build-up technology basically refers to stacking multiple insulating layers and conductive layers alternately on the surface of a core circuit board, and then manufacturing electrical vias (via ο 1 es) on the insulating layer to provide between conductive layers. Electrical connection. However, the number of layered circuit boards can be stacked more than 10 or 20 layers depending on the actual industry situation. To date

第5頁 17100.ptd 200412219 五、發明說明(2) 電^板之技術已製造出許多裝載有各式電子元件之多層電 路板’以應用於各種不同之商業產品。 曰 通常’製造增層電路板需利用一單、雙面板或多層板 作為核心基板(core substrate),亦即為核心電路板 (core circuit board)。於第1圖及第2圖中即顯示習知增 層式多層電路板之示意圖。請參閱第】圖,一增層多層電曰 路板1〇〇包含一核心電路板101及兩增層結構ι〇27該二心 電路板101包含若干已圖案化之電路層丨〇3,以及位I任 電路層103間的絕緣層104。一導電通孔1〇5則作為電路層 1·間的電性内連接。而該增層結構1〇2亦包含電路層1〇曰6 與絕緣層107之多層,然㈤’增層結構1〇2之電路層;〇6盥 ^緣層^較核心電路板1Q1之電路層1Q3與絕緣層m通常 的夕。該增層結構102之電路層1〇6間則以導電通孔 在一夕作电性連接。以第1圖來說,核心電路板1 〇 1 ί::】電路板(亦即六層),而增層結構102則為上下 谷有兩廣。 =閱第2圖’為另一習知增層式多層電路板之示意 :。:一增:多層電路板2 0 0包含-電路板201作為核心 潘# 核心電路板201包含兩圖案化 ft緣層2 0 4。-導電通孔2〇5則作為電 f層2 0 3間的電性連接。而該增層結構2〇 路 二增層結構2〇2之電路層 包路層2 0 6間則以通孔2 0 8 ( vi as)Page 5 17100.ptd 200412219 V. INTRODUCTION TO THE INVENTION (2) The technology of electronic boards has produced many multi-layer circuit boards with various types of electronic components' to be used in various commercial products. In general, a single-layer, double-panel, or multi-layer board is used as the core substrate for manufacturing the build-up circuit board, that is, the core circuit board. Schematic diagrams of a conventional multi-layer circuit board are shown in Figs. 1 and 2. Please refer to the figure. A layered multi-layer circuit board 100 includes a core circuit board 101 and two layered structures. 27 The two-core circuit board 101 includes a number of patterned circuit layers, and Bit I serves as the insulating layer 104 between the circuit layers 103. A conductive via 105 is used as electrical interconnection between the circuit layers 1 ·. The build-up structure 10 also includes multiple layers of the circuit layer 10 and the insulating layer 107. However, the circuit layer of the build-up structure 10 is 0; the circuit layer 6 is more than the circuit of the core circuit board 1Q1 The layer 1Q3 and the insulating layer m are usually in the evening. The circuit layers 106 of the build-up structure 102 are electrically connected through conductive vias overnight. Take Figure 1 as an example, the core circuit board 1 〇 1 ::] circuit board (that is, six layers), and the layer-increasing structure 102 has two valleys. = See Figure 2 'for another conventional multi-layer circuit board: : One increase: Multi-layer circuit board 2 0 0 contains-circuit board 201 as the core Pan # The core circuit board 201 contains two patterned ft edge layers 2 0 4. -The conductive vias 205 are used as electrical connections between the electrical f layers 203. The circuit layer of the build-up structure 20 is a circuit layer of the build-up structure 200, and the via layer 206 is a through-hole 208 (vi as).

17100. ptd 第6頁 200412219 五、發明說明(3) 作電性連接。而以第2圖來說,電路板2 0 1為一多層電路板 (亦即兩層),而增層結構2 0 2在電路板2 0 1之上_下兩面則 各有兩增層,如此則形成一六層電路板結構。 為達到更可靠的導通孔設計於多層電路板之製程,第 3圖顯示業界常見的三種導通孔製程。第3A圖所示為一俗 稱電鍍導通孔(plated-through hole,PTH)之示意圖。 其中通孔之開口延伸穿越絕緣層3 0 1及覆於其表面之電路 層3 0 2及3 0 3,而由電鍍金屬3 0 4構成之導電層則形成於該 導通孔之側壁。在電鍍完成後,再填充一導電或不導電填 充材3 0 5填滿殘留空隙,以保證導通孔之可靠度。 第3B圖所示為另一種通孔形式,即所謂盲孔(b 1 i nd v i a),其中盲孔之開口延伸至絕緣層3 0 6内部,但未穿透 電路層307。在電鍍層30 8沈積之後,填充一導電或不導電 材3 0 9於凹陷處,以為後續製程提供適當平坦度。 第3 C圖所示為第三種通孔形式,其中盲孔之開口延伸 穿越絕緣層3 1 0,但亦未穿透電路層3 1 1。在通孔填入導電 材3 1 3之〜後,再形成電路層312。 上述第一及第三種習知技術需填入填充材於通孔 (t h r 〇 u g h h ο 1 e )之空隙内,然而在有效通孔直徑低於0 . 0 5 mm以下時,其製程將變得難以實施。因此一般業界在大量 製造生產時,上述第一及第三種習知製程必須於通孔直徑 在0. 7 5 mm以上時實施,可使製造的可行性容易許多。在 如此情況之下,核心電路板便會因通孔之製程技術限制, 而無法達到更高佈線密度之要求。17100. ptd page 6 200412219 V. Description of the invention (3) Electrical connection. In the second figure, the circuit board 201 is a multi-layer circuit board (that is, two layers), and the layer-increasing structure 2 02 is above and below the circuit board 2 01, and each has two layers. In this way, a six-layer circuit board structure is formed. In order to achieve a more reliable process of designing vias in a multilayer circuit board, Figure 3 shows three types of via processes commonly used in the industry. Figure 3A is a schematic diagram of a commonly known as plated-through hole (PTH). The opening of the through hole extends through the insulating layer 3 0 1 and the circuit layers 3 2 and 3 3 covering the surface, and a conductive layer composed of electroplated metal 3 0 4 is formed on the side wall of the through hole. After the electroplating is completed, a conductive or non-conductive filler material 3 5 5 is filled to fill the remaining gaps to ensure the reliability of the vias. Figure 3B shows another form of through-hole, the so-called blind hole (b 1 ind v i a), in which the opening of the blind hole extends into the insulation layer 3 06 but does not penetrate the circuit layer 307. After the plating layer 308 is deposited, a conductive or non-conductive material 309 is filled in the recess to provide proper flatness for subsequent processes. Figure 3C shows a third type of through-hole, in which the opening of the blind hole extends through the insulating layer 3 1 0 but does not penetrate the circuit layer 3 1 1. After the through holes are filled with the conductive material 3 1 to 3, a circuit layer 312 is formed. The above-mentioned first and third conventional techniques need to be filled in the gaps of the filling materials in the through holes (thr ughh ο 1 e). However, when the effective through hole diameter is less than 0.05 mm, the manufacturing process will change. Too difficult to implement. Therefore, in the general industry, when mass production is performed, the above-mentioned first and third conventional processes must be implemented when the diameter of the through hole is more than 0.75 mm, which makes the manufacturing feasibility much easier. In this case, the core circuit board will not be able to meet the requirements of higher wiring density due to the process technology limitations of the vias.

17100.ptd 第7頁 200412219 五、發明說明(4) 相較於傳統之減成(s u b s t r a c ΐ i v e )蝕刻法,目前產業 界係採可製造更細線路之加成(a d d i t i v e )法,以因應更高 密度之電路板,此一方法可再分為完全加成 (fully-additive )法及半加成(semi-additive )法兩種製 程。典型之半加成方法係以無電鍍銅於絕緣電路板上形成 一晶種層(s e e d 1 a y e r ),再於晶種層上直接形成電路層。 目前習知可製作較細電路之半加成法之典型製程係如第4 圖所示。首先,請參閱第4A圖,一核心電路板401包括有 已圖案化之電路層4 0 2,位於兩電路層4 0 2間之絕緣層 ,以及一作為電路層間之電性内連接之導電通孔 (plated-through hole) 4 0 4。並提供兩有機絕緣層4 0 5真 空壓合至核心電路板401之表面,如第4B圖所示。接著, 請參閱第4C圖,於該有機絕緣層4 0 5形成多數盲孔4〇6,並 於有機,絕緣層4 0 5表面形成一無電鍍銅薄層4 0 7,且於該無 電鍵銅4 0 7上佈設一圖案化之阻層(resist iayer) 4〇8。 再利用電鍍方式形成電路層40 9於阻層開口(〇pening) 4i〇 内,如第4D圖所示。之後,再移除阻層4〇8及部分無電鍍 銅薄層40 7後,即完成製作一增層式之四層電路板4〇〇,如 第4 E圖所示,該四層電路板4 0 0係包含一核心電路板4 〇工及 兩_層結構41 1,該增層結構411係包含一有機絕緣層 及一電路層4 0 9,且忒電路層4 〇 9係由習知之線路形成 (circuit formation)半加成法所製作而成。 乂 因此,本發明所要揭露解決的問題,即是採 法提供更局佈線密度之核心電路板,而形成—更薄及更高17100.ptd Page 7 200412219 V. Explanation of the invention (4) Compared with the traditional substrac ΐ ive etching method, the industry currently adopts an additive method that can produce finer lines in order to respond to more For high-density circuit boards, this method can be further divided into two processes, a full-additive method and a semi-additive method. A typical semi-additive method is to form a seed layer (s e d 1 a y e r) on an insulated circuit board by electroless copper, and then directly form a circuit layer on the seed layer. The typical process of the semi-additive method that can be used to make thinner circuits is shown in Figure 4. First, referring to FIG. 4A, a core circuit board 401 includes a patterned circuit layer 402, an insulation layer located between the two circuit layers 402, and a conductive passage for electrical interconnection between the circuit layers. Hole (plated-through hole) 4 0 4. Two organic insulating layers 405 are provided and bonded to the surface of the core circuit board 401 by vacuum, as shown in FIG. 4B. Next, referring to FIG. 4C, a plurality of blind holes 406 are formed on the organic insulating layer 405, and an electroless copper thin layer 407 is formed on the surface of the organic, insulating layer 405. A patterned resist iayer 408 is disposed on the copper 407. Then, the circuit layer 409 is formed by electroplating in the resist opening 4i0, as shown in FIG. 4D. After that, after removing the resistance layer 408 and a part of the electroless copper thin layer 407, a layered four-layer circuit board 400 is completed. As shown in FIG. 4E, the four-layer circuit board The 4 0 0 series includes a core circuit board 40 and a two-layer structure 41 1. The layer-added structure 411 series includes an organic insulating layer and a circuit layer 4 0 9, and the circuit layer 4 0 9 is a conventional one. It is made by the semi-additive method of circuit formation.乂 Therefore, the problem to be solved by the present invention is to provide a core circuit board with more local wiring density, which is formed—thinner and higher

200412219 五、發明說明(5) 佈線密度之增層式多層電 【發明内容】 黎於以上所述習知技 提供一種高線路密度雙層 用半加成法之步驟以製作 本發明之另一目的係 之製法’俾利用該雙層電 薄且具向佈線密度之增層 本發明之再一目的: 之製法,俾於該雙層電路 孔’以使兩電路層間電性 為達上述之目的,本 路板之方法,較佳實施步 其具有_第一表面及相對應 中形成有至少一盲孔,以 之第二導電層;接著,設 緣層之第一表面上並覆蓋 (resist iayer)K 該晶種 晶種層_露於該阻層;復 於該晶種層上未覆蓋有阻 所覆盖之晶種層,俾完成 @日寺’亦可利用該雙 (core circuit board)力口 路板。 略板。 術之缺點, 電路板之製 高線路密度 提供—種高 路板作為核 式多層電路 提供一種高 板之絕緣層 連接。 發明係提供 驟係包括: 之第二表面200412219 V. Description of the invention (5) Layer-increasing multi-layer electricity of wiring density [Summary of the Invention] The above-mentioned conventional technique provides a step of a semi-additive method for high-line-density double-layer to make another object of the present invention The manufacturing method is to use the double-layer electric thin layer and increase the wiring density. Another object of the present invention: The manufacturing method is to use the double-layer circuit hole to achieve the above-mentioned electrical properties between the two circuit layers. The method of the road board preferably has a first surface and a corresponding second conductive layer with at least one blind hole formed in the method. Then, the first surface of the edge layer is provided and covered with a resist iayer. K The seed layer_exposed on the resist layer; the seed layer covered by the resist is not covered on the seed layer, complete @ 日 寺 'can also use the dual (core circuit board) power port Road boards. Slightly. Disadvantages of the technology, the circuit board manufacturing high line density provides-a high circuit board as a core multi-layer circuit to provide a high board insulation layer connection. The invention provides a step comprising: a second surface

I發日月之主要目的係 法’其製程係包括利 之雙層電路板。 、線路密度雙層電路板 心電路板以製作出輕 板。 線路密度雙層電路板 形成有電性導通I 連通 置一 該盲 層上 藉由 層部 一高 層電 以製 至該絕 晶種層 子L ;再 ’並使 電4匕學 分;之 線路密 路板作 作增層 一種用 提供一 ,並在 緣層第 (seed 設置一 該盲孔 方法形 後,移 度雙層 為一核 於製作雙層電 有機絕緣層, 该有機絕緣層 二表面上預設 layer)於該絕 圖案化阻層 及覆蓋其上之 成第一導電層 除讀阻層及其 電路板。 心電路板 式(build、up)多層電The main purpose of the issue of the sun and the moon is the method ', and its manufacturing process includes a double-layer circuit board. 2, circuit density double-layer circuit board core circuit board to make a light board. The line density double-layer circuit board is formed with electrical continuity I and is placed on the blind layer through a layer of a high-level electricity to make the insulating seed layer L; and then to make electricity 4 credits; The board is used as a layer to provide one, and after the edge layer (seed) is provided with the blind hole method, the shift double layer is used as a core to make a double-layer electrical organic insulating layer. A layer) is provided on the insulating patterned resistive layer and a first conductive layer covering the readout resistive layer and a circuit board covered thereon. Heart circuit board type (build, up) multilayer electrical

17100. ptd17100.ptd

200412219 ~—~—__ 五、發明說明(6) 【貪施方式】 為了使本發明之目的、 =認同,茲配合詳細揭露及圖式詳進-步的瞭 月可以多種形式實施之,接下所述二:后。當然, 只施例,而非限制本發明之疋本發明之較佳 積神下之實施例,皆屬於A ㈤,、疋依附在本發明$ 白屬於本發明之範圍。 + 士月之 本舍明係提供《 —種其纟φ 利用該雙層電路板作為核二電:K J路板之製法,俾 ::線密度之增層式多層電路板= = = 薄且具高 層次之實際尺寸,合先敘明。 〜'出夕層電路板中各 ,參閱第5圖,為本發明實施例之電路板 “係為一具兩電路層(丨 、私方法, 拓你士不、rcui七layer)之電路板,哕帝故 扳係有·電性導通盲孔之設計。 氏a包路 .如第_5A圖所示,首先,提供一有機絕緣層5〇2,且i =二表面5 0 2a上形成有一導電層5〇1。該有機絕緣層5〇2係 械材貝、纖維強化(f i b e r - r e i n f 〇 r c e d )有機材質或顆 ,強化(part l cl e- reinfo reed)有機材質等構成,例如環 氧樹脂(e p o x y Γ e s i η )、聚乙醯胺(p 0 1 y i m i d e )、雙順丁烯 醯亞胺 / 三氮阱(b i s m a 1 e i m i d e t r i a z i n e,B T )樹脂、 鼠酯(cyanate ester)或其玻璃纖維(glass fiber)之複合 材料寺,當然’該有機絕緣層5 0 2亦可由不同有機材質所 叠合而成,且該絕緣層之厚度若有需要亦可設計在〇. 〇 5 mm 以下。而該導電層5 0 1可為金屬材質或填充有導電物質之200412219 ~ — ~ —__ V. Explanation of the invention (6) [Method of corruption] In order to make the purpose of the present invention agree, we will cooperate with the detailed disclosure and detailed drawings. The step-by-step month can be implemented in various forms. The second: after. Of course, the examples are only examples, rather than limiting the present invention. The preferred embodiments of the present invention belong to A, and 疋 is attached to the present invention. It belongs to the scope of the present invention. + Shiyue's Ben Sheming provided "— a kind of 纟 φ using this double-layer circuit board as a nuclear second power: KJ circuit board manufacturing method, 俾 :: line-density multi-layer multilayer circuit board = = = thin and with The actual dimensions at a high level are described first. ~ 'Each layer of circuit board, see FIG. 5, which is a circuit board according to an embodiment of the present invention "is a circuit board with two circuit layers (丨, private method, Tuo Ni Bu, rcui seven layer), The emperor's old board is designed with electrical conductive blind holes. As shown in Figure _5A, first, an organic insulating layer 502 is provided, and i = two surfaces 5 0 2a are formed. The conductive layer 501. The organic insulating layer 502 is made of mechanical materials, fiber-reinf rced organic materials or particles, and reinforced (part l cl e-reinfo reed) organic materials, such as epoxy. Resin (epoxy Γ esi η), polyethylenimine (p 0 1 yimide), bis-cisbuteneimine / triazine (bisma 1 eimidetriazine, BT) resin, cyanate ester or its glass fiber ( glass fiber) of the composite material temple, of course, 'the organic insulating layer 502 can also be formed by stacking different organic materials, and the thickness of the insulating layer can also be designed below 0.05 mm if necessary. And the The conductive layer 501 may be made of metal or filled with a conductive substance.

17l〇〇. ptd 第10頁 200412219 五、發明說明(7) 咼分子材料等,例如銅、紹、碳粉填充之環氧樹脂等。 如第5B圖所示,接著,將該導電層501圖案化 (pattern),並在欲形成盲孔50 3之位置處留有導電層5〇1 之材質,俾使所欲形成之盲孔5 0 3得以連通至該導電層 5 0 1 ’再利用雷射爆破、化學#刻或電漿(p 1 a s m a )韻刻等 技術於該絕緣層5 0 2之第二表面5 0 2 b形成盲孔5 0 3。然若絕 緣層5 0 2之材質為光顯像樹脂(p h 〇 t〇i in a g e a b 1 e r e s i r〇, 則製程最好先曝光(e x p o s u r e )、顯影、烘烤形成盲孔 503,再圖案化導電層501。 如第5 C圖所示,再相對於絕緣層5 0 2之第二表面5 0 2 b 上,利用半加成法(s e m i - a d d i t i v e )製作電路層。起初係 在該絕緣層5 0 2上形成一晶種層(s e e d 1 a y e r ) 5 0 4,該晶種 層50 4可以化學沈積(chemical precipitation)、無電鍍 (electroless plating)、物理氣相沈積(physical vapor deposition)、或化學氣相沈積(chemical vapor deposition)、濺鍍(sputter)等方式形成,其中無電鍍銅 應是在β本發明實施成本考量下之較佳選擇。當然,該晶種 層5 0 4亦可為應用於無電鍍製程之鈀催化顆粒或為多種金 屬層所疊合而成,而在形成晶種層5 0 4之步驟中,應儘量 避免形成晶種層5 0 4之材質亦形成於含有導電層5 0 1之絕緣 層5 0 2第一表面5 0 2 a上。再於該晶種層5 0 4上佈設一圖案化 阻層(resist layer)505,其可為光阻(photoresist)材質 等。 如第5 D圖所示,再利用電化學方法,如電鍍或/及無17l〇〇. Ptd page 10 200412219 V. Description of the invention (7) 咼 molecular materials, such as copper, Shao, carbon-filled epoxy resin and so on. As shown in FIG. 5B, the conductive layer 501 is patterned, and a material of the conductive layer 501 is left at the position where the blind hole 50 3 is to be formed, so that the blind hole 5 to be formed is made. 0 3 can be connected to the conductive layer 5 0 1 'and then use laser blasting, chemical engraving or plasma (p 1 asma) rhyme engraving to form a blind on the second surface 5 0 2 b of the insulating layer 5 0 2 Hole 5 0 3. However, if the material of the insulating layer 502 is a photo-imaging resin (ph 〇〇〇〇〇〇 in ageab 1 eresir〇), it is best to first exposure (exposure), development, baking to form a blind hole 503, and then pattern the conductive layer 501. As shown in FIG. 5C, a semi-additive method is used to make a circuit layer on the second surface 5 0 2 b of the insulating layer 50 2. At first, it is tied to the insulating layer 5 0 A seed layer 5 0 4 is formed on 2, and the seed layer 50 4 can be chemically deposited, electroless plating, physical vapor deposition, or chemical vapor deposition. Phase deposition (chemical vapor deposition), sputtering (sputter) and other methods, in which electroless copper should be a better choice under the consideration of β implementation cost of the invention. Of course, the seed layer 504 can also be applied to The electroless palladium catalyzed particles may be formed by stacking multiple metal layers. In the step of forming the seed layer 504, the formation of the seed layer 504 should be avoided as much as possible. 0 1 of the insulating layer 5 0 2 A surface 5 0 2 a. A patterned resist layer 505 is disposed on the seed layer 5 0 4, which may be a photoresist material. As shown in FIG. 5 D, Use of electrochemical methods such as electroplating or / and

17100. ptd 第11頁 20041221917100.ptd p. 11 200412219

五、發明說明(8) 電鍍方式於晶種層5 0 4上形成電路層5〇6,該電路層5〇 6 材質係以銅為較佳之選擇。 如第5E圖所示’之後,移除該阻層505及其所覆蓋 晶種層5 0 4,即完成一應用本發明之高線路密度雙層電 板 5 0 〇。 此外,於上述之半加成法製程中 , 在开> 成晶種層5 η 前’該絕緣層5〇2之表面亦可先行表面粗化(surface yughenmg),以增加絕緣層5 0 2表面與晶種層5〇4或電 層5 0 6之結合力。亦或,當電路層5〇6之厚度太厚時,若心 亦可利用研磨或蝕刻方法以降低其厚产。 而 於本發明之第二實施例t ’亦可於=絕緣層5 0 2之 二—表面5 0 2 a及第二表面5〇2b利用半加成法形成一雙層電 ^ °如帛6A圖所示’首先’提供—絕緣層5 0 2,並在其 f y表=5 0 2 a及第二表面㈤礼各形成有_圖案化導電層 50 ,同1形成盲孔5Q3之位置處留有導電層 至#導5^1^之^彳貝使所欲形成之盲孔5 0 3得以分別連通 主孩導電層501、501a。 如第6調所示,再利用前述之半加成 5Ϊ之第一表面5心及第二表面5㈣製作晶種層504及阻層 如第6C圖所示,經由如電鍍或盔+ 分⑸ 敬A热電鍍等電化學方法, 刀別於該該絕緣層5 0 2之第一表面$ n 9 ^ # 于 成泰 a及弟二表面5 0 2 b形 成电路層5 0 6、5 0 7,再移除該阻声^ 層S “ 丄 — 省b 0 5及其所覆蓋之晶種 曰b 〇 4,即完成另一應用本發明之古φ <回線路密度雙層電路板V. Description of the invention (8) A plating layer is used to form a circuit layer 506 on the seed layer 504. The circuit layer 506 is made of copper. As shown in FIG. 5E, after removing the resist layer 505 and the seed layer 504 covered by the resist layer 505, a high-line-density double-layer circuit board 504 using the present invention is completed. In addition, in the above-mentioned semi-additive process, the surface of the insulating layer 502 may be subjected to surface roughening (surface yughenmg) before opening the seed layer 5 η to increase the insulating layer 5 0 2 The bonding force between the surface and the seed layer 504 or the electric layer 506. Alternatively, when the thickness of the circuit layer 506 is too thick, the grinding or etching method can also be used to reduce the thickness of the circuit layer. In the second embodiment t ′ of the present invention, a double-layer electrical layer can also be formed by using a semi-additive method on the insulating layer 50 2 bis—the surface 5 0 2 a and the second surface 50 2 b. As shown in the figure, the "first" is provided-the insulating layer 5 0 2, and the _ patterned conductive layer 50 is formed on each of its fy table = 5 0 2 a and the second surface, and is left at the same position as the blind hole 5Q3. The conductive layer to ## 5 ^ 1 ^ 的 ^ 彳 贝 allows the blind holes 503 to be formed to communicate with the main conductive layers 501, 501a, respectively. As shown in the sixth tone, the seed layer 504 and the resist layer are made by using the first surface 5 center and the second surface 5 半 of the above-mentioned half addition 5Ϊ, as shown in FIG. 6C. A. Electrochemical methods such as thermal plating, the first surface $ n 9 ^ # of the insulating layer 5 0 2 is formed on the surface of Cheng Tai a and the second surface 5 0 2 b to form a circuit layer 5 0 6, 5 0 7 Remove the sound blocking layer S "“ — save b 0 5 and the seed crystal covered by it b 0 4, and complete another application of the ancient φ < return circuit density double-layer circuit board of the present invention

1710017100

PtdPtd

200412219 五、發明說明(9) 6 0 0 ° 於本發明之第三實施例中,亦可於前述絕緣j 5 0 2之 第一表面502 a及第二表面502 b各具有一圖案化之電路層 5 0 1及一薄導電層501b。如第7A圖所示,該薄導電層501b 最佳為銅箔(c 〇 p p e r f 〇 i 1 )材質,厚度越薄越好,較佳為2 至5微米厚,並於該薄導電層5 0 1 b處形成有盲孔5 0 3,俾使 所欲形成之盲孔5 0 3得以連通至該導電層5 0 1。 如第7 B圖所示,再利用半加成法製作電路層,先在含 有該薄導電層5 0 1 b之絕緣層第二表面5 0 2 b上形成一晶種層 5 0 4,再佈設上一圖案化之阻層5 0 5。 如第7C圖所示,經由如電鍍或無電鍍方式等電化學方 法於該絕緣層5 0 2之第二表面5 0 2 b上形成電路層5 0 8,再移 除該阻層5 0 5及其所覆蓋之晶種層5 0 4與薄導電層5 0 1 b,即 完成另一應用本發明之高線路密度雙層電路板7 0 0。 於本發明之第四實施例中,係於前述之電路層5 0 6、 5 0 7、5 0 8之材質亦可不需整個填滿盲孔5 0 3,而僅為一覆 蓋層即_寸。如第8 A圖所示,製備一已佈有晶種層5 0 4及阻 層5 0 5之電路板5 0 0 ’(請參閱第5 C圖),再利用電化學方 法如電鍍或無電鍍方式製作電路層5 0 9於該晶種層5 0 4上, 且該電路層5 0 9並未填滿該盲孔5 0 3。 如第8 B圖所示,接著,移除該阻層5 0 5及其所覆蓋之 晶種層5 0 4,即完成另一應用本發明之高線路密度雙層電 路板8 Q Q。 於半導體封裝件製程中,係可將前述之雙層電路板200412219 V. Description of the invention (9) 6 0 0 ° In the third embodiment of the present invention, the first surface 502 a and the second surface 502 b of the aforementioned insulation j 5 0 2 may each have a patterned circuit. Layer 501 and a thin conductive layer 501b. As shown in FIG. 7A, the thin conductive layer 501b is preferably made of copper foil (copperf oi 1). The thinner the thickness, the better, preferably 2 to 5 microns thick. A blind hole 5 0 3 is formed at 1 b, so that the blind hole 5 0 3 to be formed can communicate with the conductive layer 5 0 1. As shown in FIG. 7B, a semi-additive method is used to fabricate a circuit layer. A seed layer 5 0 4 is formed on the second surface 5 0 2 b of the insulating layer containing the thin conductive layer 5 0 1 b. Lay out a patterned resistive layer 5 0 5. As shown in FIG. 7C, a circuit layer 5 0 8 is formed on the second surface 5 0 2 b of the insulating layer 5 0 2 by an electrochemical method such as electroplating or electroless plating, and then the resistive layer 5 0 5 is removed. With the seed layer 5 0 4 and the thin conductive layer 5 0 1 b covered thereon, another high-layer-density double-layer circuit board 7 0 0 of the present invention is completed. In the fourth embodiment of the present invention, the material on the aforementioned circuit layers 506, 507, and 508 does not need to completely fill the blind hole 503, but is only a covering layer, that is, _ inch. . As shown in FIG. 8A, a circuit board 5 0 0 ′ having a seed layer 5 0 4 and a resistance layer 5 0 5 is prepared (see FIG. 5 C), and then an electrochemical method such as electroplating or A circuit layer 509 is fabricated on the seed layer 504 by electroplating, and the circuit layer 509 does not fill the blind hole 503. As shown in FIG. 8B, the resist layer 5 05 and the seed layer 5 4 covered by the resist layer 5 5 are removed to complete another high-line-density double-layer circuit board 8 Q Q to which the present invention is applied. In the semiconductor package manufacturing process, the aforementioned double-layer circuit board can be used.

17100. ptd 第13頁 20041221917100.ptd p. 13 200412219

200412219 五、發明說明(11) ^同才士第1〇β圖所不,係以雙層電路板8 0 0作為核心 =路板,ηΓ作之增層式六層電路板1 0 0 0 Β示意圖。該六層 黾路板1 0 0 0 Β包含一核心兩 一 增層結構1〇〇5則包含電路^路/反800及兩增層結構1005;該 結構1〇。5之電路層二::1。06與絕緣層1 0 0 7,且該增層 接。當然,上述之增m導通孔1 0 0 8作相互電性連 層電路板,亦可運=夕層電路板不僅侷限於四層及六 -核心電路板路密度雙層電路板作為 π卜#、+、 衣作各頒增層式多層電路板。 作-二薄雙Ϊ電ί:::揭露利用線路成形之半加成法擎 薄且高佈線= 板之製作,•此可; 靠度。同日寺,:ta層式多層電路板’其亦具有良好之可 明之特.點及功㉗,:1之具體實施例,僅係用以例釋本笋 未脫離本發明上描非用以限定本發明之可實施範嘴,‘ 所揭示内容而完:之精神與技術範嘴了’任何運用本發明 請專利.11圍所、=之等效改變及”,均仍應為下述之申 鲁200412219 V. Description of the invention (11) ^ As shown in Figure 10β of the same scholar, the double-layer circuit board 8 0 0 is used as the core = circuit board, and the multi-layer six-layer circuit board made by ηΓ is 1 0 0 0 Β schematic diagram. The six-layer circuit board 1000B includes a core and a two-layer build-up structure 105, which includes a circuit circuit / anti-800 and a two-layer build-up structure 1005; the structure 10. The second circuit layer of 5: 1.06 is connected to the insulating layer 10 0 7, and the additional layer is connected. Of course, the above-mentioned increased vias 108 are used for mutual electrical connection of circuit boards, and can also be used. Circuit boards are not limited to four-layer and six-core circuit boards. , +, And clothing are awarded multi-layer circuit boards. Zuo-two thin double Ϊ ί ::: Expose the semi-additive method using circuit forming. Thin and high wiring = board production, this is OK; reliability. The same day temple, “ta-layer multilayer circuit board” which also has good identifiable features. Points and functions: The specific embodiment of 1 is only used to illustrate the bamboo shoots without departing from the description of the present invention and is not intended to be limiting The implementation of the present invention can be described, and the content of the disclosure is complete: the spirit and technology of the mouth are used. Any application of the present invention, please apply for a patent. Lu

200412219 圖式簡單說明 【圖式簡單說明】 第1圖係習知技術中增層之多層電路板結構吊意圖; 第2圖係另一習知技術中增層之多層電路板結構示意 圖; 第3 A圖係習知技術電鍍導通孔結構示意圖; - 第3 B圖係習知技術中於電鍍層沈積後,於凹陷處填有 填充材之盲孔結構示意圖; 第3 C圖係習知技術中完全填有導電材之盲孔結構示意 圖, φ第4A圖至第4E圖係習知技術中用以製作較細電路之半 加成法製程不意圖, 第5 A圖至第5 EBM系本發明之高線路密度雙層電路板之 製法第一實施例示意圖; 第,6 A圖至第6 C圖係本發明之高線路密度雙層電路板之 製法第二實施例示意圖; 第7A圖至第7C圖係本發明之高線路密度雙層電路板之 製法第兰實施例示意圖; 第8 A圖及第8 B圖係本發明之高線路’密度雙層電路板之 製法第四實施例示意圖; 鲁第9 A圖係本發明之高線路密度雙層電路板應用於覆晶 封裝之結構示意圖; 第9 B圖係本發明之高線路密度雙層電路板之另一實施 例不意圖; 第9 C圖係利用第9 B圖所示之雙層電路板以應用於覆晶200412219 Schematic illustration [Schematic description] Figure 1 shows the structure of a multilayer circuit board in the conventional technology; Figure 2 is a schematic diagram of the structure of a multilayer circuit board in another conventional technology; Figure A is a schematic view of the structure of a plating via hole in the conventional technology;-Figure 3B is a schematic diagram of a blind hole structure filled with a filling material after the plating layer is deposited in the conventional technology; Figure 3C is the conventional technology Schematic diagram of blind hole structure completely filled with conductive material. Figures 4A to 4E are not intended for the semi-additive process used to make thinner circuits in the conventional technology. Figures 5A to 5EBM are the present invention. Schematic diagram of the first embodiment of the method for manufacturing a high-line-density double-layer circuit board; FIGS. 6A to 6C are schematic diagrams of the second embodiment of the method for manufacturing a high-line-density double-layer circuit board according to the present invention; Figure 7C is a schematic diagram of the first embodiment of the method for manufacturing a high-line-density double-layer circuit board according to the present invention; Figures 8A and 8B are schematic views of the fourth embodiment of the method for manufacturing a high-line-density double-layer circuit board according to the present invention; Lu 9A is the high line density of the present invention Schematic diagram of the structure of a double-layer circuit board applied to a flip-chip package; Figure 9B is not intended for another embodiment of the high-line-density double-layer circuit board of the present invention; Figure 9C is the use of the double shown in Figure 9B Layer circuit board for flip chip application

17100.ptd 第16頁 200412219 圖式簡單說明 封裝之結構示意圖; 第1 ο A圖係本發明之高線路密度雙層電路板應用於增 層式四層電路板之結構示意圖;以及 第1 0 B圖係本發明之高線路密度雙層電路板應用於增 層式六層電路板之結構示意圖。 100, 200, 400 增層多層電路板 101,401 核心電路板 1 0 2,2 0 2,4 1 1,1 0 0 1,1 0 0 5 增層結構 103, 106, 203, 206, 302, 303, 307, 311,312, 402, 409, 506, 50 7, 5 0 8, 5 0 9, 1 0 0 2, 1 0 0 6 電路層 1 0 4,1 0 7,2 0 4,2 0 7,3 0 1,3 0 6,3 1 0,4 0 5,5 0 2 絕緣層 105,108,205,404,1004,1008 導電通孔 電路板 通孔 填充材 電鍍層 導電材 絕緣層 盲孔 無電鍍銅薄層 阻層 開口 導電層/電路層 2 0 1,5 Q 0 ’ 208 305, 309 3 0 8 ·、 313 403, 502, 1003, 1007 406,503 407 408,505 410 50117100.ptd Page 16 200412219 Schematic illustration of the structure of the package; Figure 1 ο A is a schematic diagram of the structure of the high-line-density double-layer circuit board of the present invention applied to a build-up four-layer circuit board; and 1 0 B FIG. Is a schematic structural diagram of a high-line-density double-layer circuit board of the present invention applied to an increased-layer six-layer circuit board. 100, 200, 400 Multilayer circuit board 101,401 Core circuit board 1 02, 2 0 2, 4 1 1, 1 0 0 1, 1 0 0 5 Layer structure 103, 106, 203, 206, 302, 303, 307, 311, 312, 402, 409, 506, 50 7, 5 0 8, 5 0 9, 1 0 0 2, 1 0 0 6 circuit layer 1 0 4, 1 0 7, 2 0 4, 2 0 7, 3 0 1,3 0 6,3 1 0,4 0 5,5 0 2 Insulating layer 105, 108, 205, 404, 1004, 1008 Conductive through-hole Circuit board through-hole filling material Plating layer Conductive material Insulating layer Blind hole Unplated copper thin layer Resistive layer opening conductive layer / circuit layer 2 0 1,5 Q 0 '208 305, 309 3 0 8 ·, 313 403, 502, 1003, 1007 406,503 407 408,505 410 501

17100. ptd 第17頁 200412219 圖式簡單說明 5 02 a 5 0 2 b 504 5 0 0, 6 0 0, 7 0 0, 8 0 0, 5 0 0 501a, 501b -901 902 903 90417100. ptd page 17 200412219 Simple illustration of the diagram 5 02 a 5 0 2 b 504 5 0 0, 6 0 0, 7 0 0, 8 0 0, 5 0 0 501a, 501b -901 902 903 904

1U0 0A 1 0 0 0 B 第一表面 第二表面 晶種層 雙層電路板 導電層 半導體晶片 銲墊 銲錫凸塊 絕緣保護層 辨錫球 板板 路路 電電 層層 四六1U0 0A 1 0 0 0 B First surface Second surface Seed layer Double-layer circuit board Conductive layer Semiconductor wafer Welding pad Solder bump Insulation protection layer Tin ball board Board circuit Electrical layer

17100. ptd 第18頁17100.ptd Page 18

Claims (1)

200412219 、申請專利範圍 1 . 一一 種 南 線 路 密 度 雙 層電路板之製法, 其 步驟 係包 括 二 提 供 一 有 機 絕 緣層,其具有第一 表 面及 相_對 應 之 第 二 表 面 1 並 在 該 有機絕緣層中形成 有 至少 一盲 孔 , 以 連 通 至 該 絕 緣 層 第二表面上預設之 第 二導 電層 , δ又 置 一 晶 種 層 (seed layer)於該 絕 緣層 之第 一 表 面 上 並 覆 蓋 該 盲 孔 , e-n. δ又 置 一 圖 案 化 阻層(resist 1 ay( 3Γ; )於該 晶種 層 上 , 並 使 該 盲 孔 及 覆 蓋其上之晶種層顯 露 於該 阻層 , 藉 由 電 化 學 方 法形成第一導電層 於 该晶 種層 上 未 覆 蓋 有 阻 層 部 分 9 以及 移 除 該 阻 層 及 其所覆蓋之晶種層 〇 2. 如 中 請 專 利 範 圍 第 1項之高線路密度雙^ 1電路板之製法 其 中 j 該 有 機 絕 緣層之第一表面於 ό又 置晶 種層 前 可 先 行 表 面 粗 化 〇 3. 如 中 請 專 利 々/Γ 章巳 圍 第 1項之高線路密度雙層電路板之製法 , 其 中 j 該 盲 孔 亦 可分別形成於該有 機 絕緣 層之 第 一 表 面 k 第 二 表 面 俾導通至相對另一 表 面上 之導 電 層 4. 如 中 請 專 利 Arhr 章巳 圍 第 1項之高線路密度雙層電路板之製法 , 其 中 1 該 絕 緣 層 表面亦可具有一薄 導 電層 〇 5. 如 中 請 專 利 /τλτ 章巳 圍 第 1項之高線路密度雙層電路板之製法 其 中 該 盲 孔 内 之導電層填滿該盲 孔 〇 6 . 如 中 請 專 利 範 圍 第 1項之高線路密度雙層電路板之製法 , 其 中 5 該 盲 孔 内 之導電層僅覆蓋於 該 盲孔 表面 〇200412219 1. The scope of application for patent 1. A method for manufacturing a south-line density double-layer circuit board, the steps of which include providing an organic insulating layer, which has a first surface and a corresponding second surface 1 and is provided on the organic insulation. At least one blind hole is formed in the layer to communicate with a predetermined second conductive layer on the second surface of the insulating layer, and a seed layer is placed on the first surface of the insulating layer and covers the A blind hole, en. Δ is further provided with a patterned resist layer (resist 1 ay (3Γ;)) on the seed layer, and the blind hole and the seed layer covering it are exposed to the resist layer, and by electrification Method to form a first conductive layer on the seed layer without covering the resist layer portion 9 and remove the resist layer and the seed layer covered by the resist layer. ^ 1 circuit board manufacturing method, wherein the first surface of the organic insulating layer The surface can be roughened before the layer. For example, the patent 々 / Γ Chapter 巳 of the high-line-density double-layer circuit board manufacturing method, where j the blind hole can also be formed in the organic insulating layer. One surface k and the second surface 俾 are electrically connected to the conductive layer on the other surface. 4. Please refer to the patent for the method for manufacturing a high-line-density double-layer circuit board of the first item of Arhr, Chapter 1, where 1 The surface of the insulating layer may also have A thin conductive layer 〇5. As claimed in the patent / τλτ Chapter 1 High-density double-layer circuit board manufacturing method wherein the conductive layer in the blind hole fills the blind hole 〇6. Patent scope as requested The manufacturing method of the high-line-density double-layer circuit board of item 1, wherein the conductive layer in the blind hole covers only the surface of the blind hole. 17100.ptd 第19頁 200412219 六、申請專利範圍 7. 如申請專利範圍第1項之高線路密度雙層電路板之製法 ,其中,該雙層電路板可作為一核心電路板Qcore circuit board),以製作一增層式多層電路板。 8. 如申請專利範圍第1項之高線路密度雙層電路板之製法 ,其中,該導電層為金屬導電層。 .如申請專利範圍第1項之高線路密度雙層電路板之製法 ,其中,該晶種層可全部(f u 1 1 y )覆蓋於該盲孔及其餘 非盲孔區域。 1 0 .如申請專利範圍第1項之高線路密度雙層電路板之製法 φ,其中,該晶種層可部分覆蓋於該盲孔及其餘非盲孔 區域。 11.如申請專利範圍第1項之高線路密度雙層電路板之製法 ,其中,該晶種層係為無電鍍銅。 1 2 .如申請專利範圍第1項之高線路密度雙層電路板之製法 ,其中,該晶種層係為藏鍍(s p u 11 e r )銅。 1 3 .如申請專利範圍第1項之高線路密度雙層電路板之製法 ,夂 '中,該晶種層係為妃金屬微粒(P a r t i c 1 e )所構成 ο 1 4 .如申請專利範圍第1項之高線路密度雙層電路板之製法 馨,其中,該電化學方法係為無電鍍法及電鍍法之任一 者。 1 5 .如申請專利範圍第1項之高線路密度雙層電路板之製法 ,其中,該電化學方法係為無電鍍法及電鍍法之交互 使用。17100.ptd Page 19 200412219 VI. Application for patent scope 7. For the manufacturing method of the high-line-density double-layer circuit board under item 1 of the patent scope, where the double-layer circuit board can be used as a core circuit board (Qcore circuit board), In order to make a multilayer multilayer circuit board. 8. The method for manufacturing a high-line-density double-layer circuit board according to item 1 of the application, wherein the conductive layer is a metal conductive layer. . For example, the method for manufacturing a high-line-density double-layer circuit board according to item 1 of the patent application scope, wherein the seed layer can completely cover the blind hole and the remaining non-blind hole areas (f u 1 1 y). 10. The manufacturing method φ of a high-line-density double-layer circuit board according to item 1 of the patent application scope, wherein the seed layer may partially cover the blind hole and the remaining non-blind hole areas. 11. The method for manufacturing a high-line-density double-layer circuit board according to item 1 of the application, wherein the seed layer is electroless copper. 12. The method for manufacturing a high-line-density double-layer circuit board according to item 1 of the scope of patent application, wherein the seed layer is Tibetan plated (s p u 11 e r) copper. 1 3. According to the method for manufacturing a high-line-density double-layer circuit board according to item 1 of the scope of patent application, the seed layer is composed of feminine metal particles (P artic 1 e) in the scope of patent application. 1 4. The method for manufacturing a high-line-density double-layer circuit board according to item 1, wherein the electrochemical method is any one of an electroless plating method and a plating method. 15. The method for manufacturing a high-line-density double-layer circuit board according to item 1 of the scope of patent application, wherein the electrochemical method is an interactive use of electroless plating method and electroplating method. 17100.ptd 第20頁17100.ptd Page 20
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Publication number Priority date Publication date Assignee Title
CN111432551A (en) * 2019-01-09 2020-07-17 荣晶生物科技股份有限公司 Miniature electronic device and circuit substrate thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111432551A (en) * 2019-01-09 2020-07-17 荣晶生物科技股份有限公司 Miniature electronic device and circuit substrate thereof
US11317531B2 (en) 2019-01-09 2022-04-26 Altek Biotechnology Corporation Microelectronic device and circuit board thereof
CN111432551B (en) * 2019-01-09 2022-05-06 荣晶生物科技股份有限公司 Miniature electronic device and circuit substrate thereof

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