TWI260960B - Method for forming high density bi-layer circuit board - Google Patents

Method for forming high density bi-layer circuit board Download PDF

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Publication number
TWI260960B
TWI260960B TW91137826A TW91137826A TWI260960B TW I260960 B TWI260960 B TW I260960B TW 91137826 A TW91137826 A TW 91137826A TW 91137826 A TW91137826 A TW 91137826A TW I260960 B TWI260960 B TW I260960B
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Taiwan
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layer
circuit board
circuit
conductive
seed
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TW91137826A
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TW200412219A (en
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I-Chung Tung
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Phoenix Prec Technology Corp
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Abstract

A method for forming high density bi-layer circuit board is proposed. An organic insulating layer is formed with at least a blind via therethrough, wherein the bottom end of the blind via is connected to a second conductive layer formed on a second surface of the circuit board. A seed layer is applied over a first surface of the circuit board and fully or partially covers the blind via. Then a patterned resist layer is applied over the seed layer and formed with at least an opening corresponding in position to the blind via. After a first conductive layer is formed within the blind via by an electrically chemical method, the resist layer and the seed layer underneath the resist layer are removed to form a high density bi-layer circuit board.

Description

1260960 r —_案號91137826 年U月 < 曰 倐正 五、發明說明(1) 【發明所屬之技術領域】 本發明係有關於一種高線路密度雙層電路板之製法, 亦是有關於一種用於製作增層式多增電路板之核心電路板 之製法,該雙層電路板之形成係利用一有機絕緣層,且在 其一表面上至少包含一導電層或電路層,在另一表面上則 利用半加成法(semi-additive process, SAP)形成電路 層,並在該雙層電路板之絕緣層形成有電性導通盲孔,以 提供該導電層之電性連接。 【先前技術】 人數位助理 3因此這些電子產 的電路板及電子元 功能之半導體元件 求。因此,對應用 電子產品來說,電 〇 罪度及高佈線密度 發$出一種增層技 上疋指在一核心電 堆璧多層絕緣層及 v 1 a ho 1 es)以提 電路板$η _ 双您數目可依 夕至今,增層 電子元件之多 電子產品輕小化已是長久以來眾所 動電話、手提電腦、手提錄放影機或個 (personal digital assistants)等 品之製作便需要使用比以前更小、更薄 件’而隨著此縮小化之趨勢,各種不同 鑲嵌在一電路板上則有朝更高密度之需 上述更薄且高佈線密度之多層電路板於 路板之製程與設計則將面臨更高之挑戰 在電路板製造業界,低成本、高可 一直是所追求之目標。為達目標,於是 術(bui ld-up)。所謂的增層技術基本 路板(core circuit b〇ard)表面上交互 導電層,再於絕緣層製作電性導通孔( 供各導電層間之電性連接。然而,增層 實際業界情況之所需堆疊超過丨〇或2 〇層 電路板之技術已製造出許多裝載有各式 1260960 ____137826__U β 年 U 月 S 曰 _修正_ 五、發明說明(2) 路板,以應用於各種不同之商業產品。 通常’製造增層電路板需利用一單、雙面板或多層板 作為核心基板(core substrate),亦即為核心電路板 (core circuit board)。於第1圖及第2圖中即顯示習知增 層式多層電路板之示意圖。請參閱第1圖,一增層多層電 路板1 0 0包含一核心電路板1 〇丨及兩增層結構1 〇 2。該核心 電路板101包含若干已圖案化之電路層1〇3,以及位於任兩 電路層103間的絕緣層ι〇4。一導電通孔ι〇5則作為電路層 1 0 3間的電性内連接。而該增層結構1 〇 2亦包含電路層1 〇 6 與絕緣層1 0 7之多層,然而,增層結構1 〇 2之電路層1 〇 6與 絕緣層1 0 7較核心電路板1 〇丨之電路層1 〇 3與絕緣層1 〇 4通常 要薄的多。該增層結構1 〇 2之電路層1 〇 6間則以導電通孔 1 〇 8 ( v 1 a s)作電性連接。以第1圖來說,核心電路板1 〇 i 為一多層電路板(亦即六層),而增層結構1 〇 2則為上下 各有兩層。 明參閱第2圖’為另一習知增層式多層電路板之示意 ^ /、中 &層多層電路板200包含一電路板20 1作為核心 $路板及兩增層結構2〇2。該核心電路板2〇1包含兩圖案化 電路層2 0 3及其間之絕緣層2 〇 4。一導電通孔2 0 5則作為電 路層2 0 3間的電性連接。而該增層結構2 〇 2亦包含電路層 2 〇 6與絕緣層2 0 7,然而,增層結構2 〇 2之電路層2 〇 6與絕緣 ,2 0J較電路板2 〇 1之電路層2 〇 3與絕緣層2 0 4通常要薄的 多。該增層結構2 0 2之電路層2 0 6間則以通孔2〇8 ( 作電性連接。而以第2圖來說,電路板2 〇丨為一多層 (亦即兩層),而增層結構2〇2在電路板201之上下兩面則1260960 r - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A method for fabricating a core circuit board of a multi-layered multi-addition circuit board, the double-layer circuit board being formed by using an organic insulating layer and having at least one conductive layer or circuit layer on one surface thereof on the other surface The circuit layer is formed by a semi-additive process (SAP), and an electrically conductive via hole is formed on the insulating layer of the double-layer circuit board to provide electrical connection of the conductive layer. [Prior Art] The number of assistants 3 is therefore required for the circuit boards and electronic components of these electronic products. Therefore, for the application of electronic products, the embarrassing sin and the high wiring density are increased by a layering technique in a core stack, a plurality of insulating layers and v 1 a ho 1 es) to provide a circuit board $η _ The number of you can be used up to now, the increase in the number of electronic components of electronic components has long been the use of mobile phones, laptops, portable video recorders or personal digital assistants. Smaller and thinner parts than before, and with this trend of miniaturization, various mountings on a circuit board have a higher density and require a thinner and higher wiring density multi-layer circuit board in the process of the road board. And design will face higher challenges in the board manufacturing industry, low cost, high has always been the goal pursued. In order to achieve the goal, then surgery (bui ld-up). The so-called core circuit b〇ard has alternating conductive layers on the surface, and then electrical vias are formed in the insulating layer (for electrical connection between the conductive layers. However, the actual situation of the layer is required. The technology of stacking more than 丨〇 or 2 电路 layer boards has produced a number of loads of various types of 1260960 ____137826__U β U 曰 修正 修正 修正 五 五 五 五 五 五 五 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Usually, the manufacture of a build-up board requires the use of a single, double-panel or multi-layer board as the core substrate, which is the core circuit board. In Figures 1 and 2, the conventional build-up layer is shown. Schematic diagram of a multi-layer circuit board. Referring to FIG. 1, a multi-layered multi-layer circuit board 100 includes a core circuit board 1 and two build-up structures 1 〇 2. The core circuit board 101 includes a plurality of patterned patterns. The circuit layer 1〇3, and the insulating layer ι4 between any two circuit layers 103. A conductive via ι〇5 acts as an electrical interconnection between the circuit layers 103. The build-up structure 1 〇2 Also includes circuit layer 1 〇 6 The insulating layer 10 7 is a plurality of layers, however, the circuit layer 1 〇 6 of the build-up structure 1 〇 2 and the insulating layer 107 are generally thinner than the circuit layer 1 〇 3 and the insulating layer 1 〇 4 of the core circuit board 1 The circuit layer 1 〇 6 of the build-up structure 1 〇 2 is electrically connected by a conductive via 1 〇 8 ( v 1 as). In the first figure, the core circuit board 1 〇i is a Multi-layer circuit board (ie, six layers), and the build-up structure 1 〇 2 has two layers on the top and bottom. See Figure 2 for another schematic of the conventional layered multi-layer circuit board ^ /, medium & The multi-layer circuit board 200 includes a circuit board 20 1 as a core $ way board and two build-up structures 2 〇 2. The core circuit board 2 〇 1 includes two patterned circuit layers 203 and an insulating layer 2 〇 4 therebetween. The conductive vias 20 5 are electrically connected between the circuit layers 2 0 3 , and the build-up structure 2 〇 2 also includes the circuit layers 2 〇 6 and the insulating layer 2 0 7 , however, the build-up structure 2 〇 2 The circuit layer 2 〇6 and the insulation, the circuit layer 2 〇3 and the insulating layer 205 of the circuit board 2 〇1 are generally much thinner. The circuit layer 2 0 6 of the build-up structure 2 0 2 Through hole 2〇8 (Electrically connected. In the second figure, the board 2 is a multi-layer (ie, two layers), and the build-up structure 2〇2 is on the lower side of the board 201.

17100全懋 ptc 第6頁 1260960 案號 91137826 a 修正 五、發明說明(3) 各有兩增層,如此則形成一六層電路板結構。 為達到更可靠的導通孔設計於多層電路板之製程,第 3圖顯示業界常見的三種導通孔製程。第3A圖所示為一俗 稱電鑛導通孔(plated-through hole, PTH)之示意圖。 其中通孔之開口延伸穿越絕緣層3 0 1及覆於其表面之電路 層3 0 2及3 0 3,而由電鍍金屬3 0 4構成之導電層則形成於該 導通孔之側壁。在電鍍完成後,再填充一導電或不導電填 充材3 0 5填滿殘留空隙,以保證導通孔之可靠度。 第3B圖所示為另一種通孔形式,即所謂盲孔(b 1 i nd v i a),其中盲孔之開口延伸至絕緣層3 0 6内部,但未穿透 電路層307。在電鍍層30 8沈積之後,填充一導電或不導電 材3 0 9於凹陷處,以為後續製程提供適當平坦度。 第3 C圖所示為第三種通孔形式,其中盲孔之開口延伸 穿越絕緣層3 1 0,但亦未穿透電路層3 1 1。在通孔填入導電 材3 1 3之後,再形成電路層3 1 2。 上述第一及第三種習知技術需填入填充材於通孔 (t h r 〇 u g h h ο 1 e )之空隙内,然而在有效通孔直徑低於0 . 0 5 mm以下時,其製程將變得難以實施。因此一般業界在大量 製造生產時,上述第一及第三種習知製程必須於通孔直徑 在0. 7 5 mm以上時實施,可使製造的可行性容易許多。在 如此情況之下,核心電路板便會因通孔之製程技術限制, 而無法達到更高佈線密度之要求。 相較於傳統之減成 (s u b s t r a c t i v e ) #刻法,目前產 業界係採可製造更細線路之加成 (additive)法,以因應 更高密度之電路板,此一方法可再分為完全加成17100 懋 ptc Page 6 1260960 Case No. 91137826 a Amendment 5, invention description (3) Each has two layers, so a six-layer circuit board structure is formed. To achieve a more reliable via design for multi-layer boards, Figure 3 shows three common via processes commonly found in the industry. Figure 3A shows a schematic diagram of a commonly known plated-through hole (PTH). The opening of the through hole extends through the insulating layer 310 and the circuit layers 3 0 2 and 3 0 3 covering the surface thereof, and the conductive layer composed of the plated metal 300 is formed on the sidewall of the via hole. After the electroplating is completed, a conductive or non-conductive filling material 305 is filled to fill the residual space to ensure the reliability of the via hole. Figure 3B shows another form of via, a so-called blind via (b 1 i nd v i a), in which the opening of the blind via extends into the interior of the insulating layer 306 but does not penetrate the circuit layer 307. After the plating layer 30 8 is deposited, a conductive or non-conductive material is filled in the recesses to provide proper flatness for subsequent processes. Figure 3C shows a third form of via in which the opening of the blind via extends through the insulating layer 310, but does not penetrate the circuit layer 31. After the via holes are filled with the conductive material 3 1 3, the circuit layer 3 1 2 is formed. The first and third conventional techniques described above need to be filled with a filler material in the gap of the through hole (thr 〇ughh ο 1 e ), but when the effective through hole diameter is less than 0.05 mm, the process will change. It is difficult to implement. Therefore, in the general manufacturing industry, the above first and third conventional processes must be carried out when the through hole diameter is 0.75 mm or more, which makes the manufacturing feasibility much easier. Under such circumstances, the core circuit board cannot meet the requirements of higher wiring density due to the limitation of the process technology of the through hole. Compared with the traditional substractive #刻法, the current industry adopts the additive method for making finer lines, in order to respond to higher density boards, this method can be further divided into complete additions. to make

17100 全懋.ptc 第7頁 1260960 - ^ f〆... 案號91137826 年M月7日 修主—一__ 五、發明說明(4) (fully-additive)法及半加成(semi-additive)法兩種製 程。典型之半加成方法係以無電鍍銅於絕緣電路板上形成 一晶種層(seed layer ),再於晶種層上直接形成電路層。 目前習知可製作較細電路之半加成法之典型製程係如第4 圖所示。首先,請參閱第4 A圖,一核心電路板40 1包括有 已圖案化之電路層4 0 2,位於兩電路層4 0 2間之絕緣層 4 0 3,以及一作為電路層間之電性内連接之導電通孔 (plated-through hole)404。並提供兩有機絕緣層40 5真 空壓合至核心電路板4 0 1之表面,如第4 B圖所示。接著, 請參閱第4 C圖,於該有機絕緣層4 0 5形成多數盲孔4 0 6,並 於有機絕緣層4 0 5表面形成一無電鍍銅薄層4 0 7,且於該無 電鐘銅40 7上佈設一圖案化之阻層(resist layer) 408。 再利用電鑛方式形成電路層4 0 9於阻層開口( o p e n i n g ) 4 1 0 内,如第4D圖所示。之後,再移除阻層40 8及部分無電鍍 銅薄層4 0 7後,即完成製作一增層式之四層電路板4 0 0,如 第4 E圖所示,該四層電路板4 0 0係包含一核心電路板4 0 1及 兩增層結構4 1 1,該增層結構4 1 1係包含一有機絕緣層4 0 5 及一電路層4 0 9,且該電路層4 0 9係由習知之線路形成 (circuit formation)半加成法所製作而成。 因此,本發明所要揭露解決的問題,即是採用半加成 法提供更高佈線密度之核心電路板,而形成一更薄及更高 佈線密度之增層式多層電路板。 【發明内容】 鑒於以上所述習知技術之缺點,本發明之主要目的係 提供一種高線路密度雙層電路板之製法,其製程係包括利17100 全懋.ptc Page 7 1260960 - ^ f〆... Case No. 91138826 M7 on July 7 - __ V. Description of invention (4) (fully-additive) and semi-additive (semi- Additive) two processes. A typical semi-additive method is to form a seed layer on an insulating circuit board with electroless copper, and then directly form a circuit layer on the seed layer. A typical process for customizing the semi-additive method of finer circuits is shown in Figure 4. First, referring to FIG. 4A, a core circuit board 40 1 includes a patterned circuit layer 420, an insulating layer 403 between the two circuit layers 406, and an electrical connection between the circuit layers. An internally connected conductive-through hole 404. And two organic insulating layers 40 5 are vacuum-bonded to the surface of the core circuit board 410, as shown in FIG. 4B. Next, referring to FIG. 4C, a plurality of blind vias 060 are formed on the organic insulating layer 405, and an electroless copper thin layer 407 is formed on the surface of the organic insulating layer 405, and the electric clock is A patterned resist layer 408 is disposed on the copper 40 7 . The circuit layer 4 0 9 is formed by the electric ore method in the resist layer opening ( o p e n i n g ) 4 1 0 as shown in FIG. 4D. After the resist layer 40 8 and a portion of the electroless copper thin layer 407 are removed, a four-layer circuit board 400 is formed. As shown in FIG. 4E, the four-layer circuit board is completed. The system includes a core circuit board 410 and two build-up structures 4 1 1 , and the build-up structure 4 1 1 includes an organic insulating layer 405 and a circuit layer 409, and the circuit layer 4 The 0 9 system is produced by a conventional circuit formation semi-additive method. Accordingly, the problem to be solved by the present invention is to provide a core board having a higher wiring density by a semi-additive method to form a layered multi-layer circuit board having a thinner and higher wiring density. SUMMARY OF THE INVENTION In view of the above disadvantages of the prior art, the main object of the present invention is to provide a method for manufacturing a high-density double-layer circuit board, the process of which includes

17100 全懋.ptc 第8頁 1260960 〆 _案號91137826 邙年Θ月5曰 修正_ 五、發明說明(5) 用半加成法之步驟以製作高線路密度之雙層電路板。 本發明之另一目的係提供一種高線路密度雙層電路板 之製法,俾利用該雙層電路板作為核心電路板以製作出輕 薄且具高佈線密度之增層式多層電路板。 本發明之再一目的係提供一種高線路密度雙層電路板 之製法,俾於該雙層電路板之絕緣層形成有電性導通盲 孔,以使兩電路層間電性連接。 為達上述之目的,本發明係提供一種用於製作雙層電 路板之方法,較佳實施步驟係包括:提供一有機絕緣層, 其具有第一表面及相對應之第二表面,並在該有機絕緣層 中形成有至少一盲孔,以連通至該絕緣層第一表面上預設 之第一導電層;接著,設置一晶種層(s e e d 1 a y e r )於該絕 緣層之第二表面上並覆蓋該盲孔;再設置一阻層(resist 1 ay e r )於該晶種層上,並使該阻層圖案化形成有多數之開 口以外露出欲沉積有電路層及導電盲孔之該晶種層部分; 復藉由電化學方法,同時於該阻層開口中之該晶種層上形 成電路層以及導電盲孔;之後,移除該阻層及其所覆蓋之 晶種層,俾完成一高線路密度雙層電路板。 同時,亦可利用該雙層電路板作為一核心電路板 (core circuit board)加以製作增層式(build-up)多層電 路板。 【實施方式】 為了使本發明之目的、特徵及功效,能更進一步的瞭 解與認同,茲配合詳細揭露及圖式詳加說明如后。當然, 本發明可以多種形式實施之,接下所述僅是本發明之較佳17100 懋.ptc Page 8 1260960 〆 _ Case No. 91138826 邙年Θ月5曰 Amendment _ V. Invention Description (5) Use the semi-additive method to make a double-layer circuit board with high line density. Another object of the present invention is to provide a method of fabricating a high-density double-layer circuit board using the two-layer circuit board as a core circuit board to produce a thin-layered multi-layer circuit board having a thin and high wiring density. Still another object of the present invention is to provide a method of fabricating a high-density double-layer circuit board in which an insulating via is formed in an insulating layer of the two-layer circuit board to electrically connect the two circuit layers. In order to achieve the above object, the present invention provides a method for fabricating a two-layer circuit board, the preferred embodiment comprising: providing an organic insulating layer having a first surface and a corresponding second surface, and Forming at least one blind hole in the organic insulating layer to communicate with the predetermined first conductive layer on the first surface of the insulating layer; then, providing a seed layer on the second surface of the insulating layer And covering the blind hole; further providing a resist layer (resist 1 ay er) on the seed layer, and patterning the resist layer to form a plurality of openings to expose the crystal to be deposited with a circuit layer and a conductive blind hole a layer portion; forming a circuit layer and a conductive via hole on the seed layer in the opening of the resist layer by an electrochemical method; thereafter, removing the resist layer and the seed layer covered thereby, and completing A high line density double layer circuit board. At the same time, the two-layer circuit board can be used as a core circuit board to fabricate a build-up multilayer circuit board. [Embodiment] In order to make the objects, features and effects of the present invention further understand and recognize, the detailed disclosure and the drawings are described in detail below. Of course, the present invention can be implemented in various forms, and the following is merely a preferred embodiment of the present invention.

17]00 全懋.ptc 第9頁 1260960 Ία年y月 修正 曰 案號 五、發明說明(6) 貝%例,而非限制本發明之範圍,只要是依附在本發 精神下之實施例,皆屬於本發明之範圍。 本發明係提供一種高線路密度雙層電路板之製法, 利用該雙層電路板作為核心電路板以製作出暨輕薄且具古 佈線密度之增層式多層電路板。本發明之圖式僅為簡單= 明,並非依實際尺寸描繪,亦即未反應出多層電路板中1 層次之實際尺寸,合先敘明。 。 請參閱第5圖,為本發明實施例之電路板製程方法, 其係為一具兩電路層(circuit layer)之電路板,該電路 板係有電性導通盲孔之設計。 如第5A圖所示,首先,提供一有機絕緣層5〇2,且其 第一表面5 0 2a上形成有一導電層5 〇丨。該有機絕緣層5 〇 2係 由有機材質、纖維強化(f i b e r - r e i n f 〇 r c e d )有機材質或i 粒強化(particle- reinforced)有機材質等構成,例如環 氧樹脂(epoxy resin)、聚乙醯胺(p〇ly imide)、雙順丁稀 一酸酷亞胺 /三氮陕(bismaleimide triazine,BT)樹脂、 氰酯(cyanate ester)或其玻璃纖維(glass fiber)之複合 材料等;當然,該有機絕緣層5 0 2亦可由不同有機材質所 疊合而成,且該絕緣層之厚度若有需要亦可設計在〇〇5mm 以下。而該導電層5 0 1可為金屬材質或填充有導電物質之 高分子材料等,例如銅、鋁、碳粉填充之環氧樹脂等。17] 00 懋 pt pt pt pt pt pt pt pt pt pt pt pt pt pt pt pt pt 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 All are within the scope of the invention. The invention provides a method for manufacturing a high-density double-layer circuit board, which uses the double-layer circuit board as a core circuit board to produce a multi-layer circuit board with light and thin wiring density. The drawing of the present invention is only simple = clear, not drawn according to the actual size, that is, the actual size of the 1 layer in the multilayer circuit board is not reflected, which is described first. . Referring to FIG. 5, a circuit board manufacturing method according to an embodiment of the present invention is a circuit board having two circuit layers, and the circuit board is designed with an electrical conduction blind hole. As shown in Fig. 5A, first, an organic insulating layer 5?2 is provided, and a conductive layer 5? is formed on the first surface 502a. The organic insulating layer 5 〇 2 is made of an organic material, a fiber-reinf 〇rced organic material, or a particle-reinforced organic material, such as an epoxy resin or a polyacetamide. (p〇ly imide), a compound of a bismaleimide triazine (BT) resin, a cyanate ester or a glass fiber thereof; of course, The organic insulating layer 502 can also be formed by laminating different organic materials, and the thickness of the insulating layer can be designed to be less than 5 mm if necessary. The conductive layer 510 may be a metal material or a polymer material filled with a conductive material, such as copper, aluminum, carbon powder-filled epoxy resin, or the like.

17100 全懋.ptc 第10頁 如第5B圖所示,接著,將該導電層501圖案化 (pattern),並在欲形成盲孔50 3之位置處留有導電層5〇1 之材質,俾使所欲形成之盲孔5 0 3得以連通至該導電層 5 0 1,再利用雷射爆破、化學蝕刻或電漿(p 1 a s m a )钱刻等 1260960 __________91137826 年 d 月 C 日 修正 _ 五、發明說明(7) 技術於該絕緣層5 0 2之第二表面5 0 2 b形成盲孔5 0 3。然若絕 緣層5 0 2之材質為光顯像樹脂(p h 〇 t 〇 i m a g e a b 1 e r e s i η ), 則製程最好先曝光(exposure)、顯影、烘烤形成盲孔 503,再圖案化導電層501。 如第5 C圖所示,再相對於絕緣層5 0 2之第二表面5 0 2 b 上,利用半加成法(s e m i - a d d i t i v e )製作電路層。起初係 在该絕緣層5 0 2上形成一晶種層(seed layer)504,該晶種 層5 0 4可以化學沈積(chemical precipitation)、無電鑛 (electroless plating)、物理氣相沈積(physical vapor deposition)、或化學氣相沈積(chemical vapor deposition)、濺鍍(sputter)等方式形成,其中無電鍍銅 應是在本發明實施成本考量下之較佳選擇。當然,該晶種 層5 0 4亦可為應用於無電鍍製程之鈀催化顆粒或為多種金 屬層所疊合而成,而在形成晶種層5 0 4之步驟中,應儘量 避免形成晶種層5 0 4之材質亦形成於含有導電層5 0 1之絕緣 層5 0 2第一表面5 0 2 a上。再於該晶種層5 0 4上佈設一圖案化 阻層(resist layer)505,其可為光阻(photoresist)材質 等。 如第5D圖所示,再利用電化學方法,如電鑛或/及無 電鍍方式於晶種層50 4上形成電路層506,該電路層50 6之 材質係以銅為較佳之選擇。 如第5 E圖所示,之後,移除該阻層5 0 5及其所覆蓋之 晶種層5 0 4,即完成一應用本發明之高線路密度雙層電路 板 5 0 0 〇 此外,於上述之半加成法製程中,在形成晶種層5 0 417100 懋.ptc page 10 as shown in FIG. 5B, next, the conductive layer 501 is patterned, and a material of the conductive layer 5〇1 is left at a position where the blind hole 50 3 is to be formed, 俾The blind hole 50 3 to be formed is connected to the conductive layer 5 0 1, and then laser blasting, chemical etching or plasma (p 1 asma) money engraving, etc. 1260960 __________91137826 d month C day correction _ V. DESCRIPTION OF THE INVENTION (7) A blind hole 503 is formed on the second surface 5 0 2 b of the insulating layer 502. However, if the material of the insulating layer 502 is a light developing resin (ph 〇t 〇imageab 1 eresi η ), the process preferably exposes, develops, and bakes to form a blind via 503, and then patterns the conductive layer 501. . As shown in Fig. 5C, a circuit layer is formed by a semi-additive method (s e m i - a d d i t i v e ) on the second surface 5 0 2 b of the insulating layer 502. Initially, a seed layer 504 is formed on the insulating layer 502, and the seed layer 504 can be chemical precipitation, electroless plating, physical vapor deposition (physical vapor deposition). Deposition, or chemical vapor deposition, sputtering, etc., wherein electroless copper plating is a preferred choice under the cost of implementation of the present invention. Of course, the seed layer 504 may also be a palladium catalytic particle applied to the electroless plating process or a plurality of metal layers, and in the step of forming the seed layer 504, the formation of the crystal should be avoided as much as possible. The material of the seed layer 504 is also formed on the first surface 5 0 2 a of the insulating layer 502 including the conductive layer 510. Further, a patterned resist layer 505 is disposed on the seed layer 504, which may be a photoresist material or the like. As shown in Fig. 5D, a circuit layer 506 is formed on the seed layer 50 4 by an electrochemical method such as electrowinning or/and electroless plating. The material of the circuit layer 506 is preferably copper. As shown in FIG. 5E, after removing the resist layer 505 and the seed layer 504 covered thereby, a high-density double-layer circuit board using the present invention is completed. In the above-described semi-additive process, the seed layer 5 0 4 is formed.

17100 全懋.ptc 第11頁 1260960 MM 91137826^_ L] Φ 年 ^ 月( 曰 修一 五、發明說明(8) 前,,絕緣層502之表面亦可先行表面粗化W心e : = H 增加絕緣層50 2表面與晶種層5 0 4或電路 層 “力。亦當電路層506之厚度太厚時,若泰 要則亦可利用研磨或蝕刻方法以降低其厚产。 而 - ϊ Ϊ ΐη!之第二實施例* ’亦可於前述絕緣層5 0 2之 弟一表面5 0 2a及第二表面5 0 2b利用半加成法 ,板广,6A圖所示,首★,提供—絕緣層…,並在曰复電 弟一表面5 0 2a及第二表面502b各形成有—圖案化導電声、 50卜501a,同時在欲形成盲孔5〇3之位置處留有導電^ 501 ' 50 la之材質,俾使所欲形成之盲孔 至該導電層50卜501a。 仟乂刀別運通 如第6B圖所示,再利用前述之半加成法於該絕緣層 502之第一表面5〇2a及第二表面50 2b製作晶種層5〇4及阻片 5 0 5 ° 9 如第6C圖所示,經由如電鍍或無電鍍等電化學方法 分別於該該絕緣層5 0 2之第一表面5〇2a及第二表面%以^形 成電路層5 0 6、5 0 7,再移除該阻層5 0 5及其所覆蓋之晶^ 層5 0 4,即完成另一應用本發明之高線路密度雙層電路板 6 0 0 ° 於本發明之第三實施例中,亦可於前述絕緣層5〇2之 第一表面5 0 2a及第二表面5 0 2b各具有一圖案化之電路層 501及一薄導電層5〇lb。如第7A圖所示,該薄導電層5〇\b 最佳為銅结(copper f0i 1)材質,厚度越薄越好,^佳 至5微米厚,並於該薄導電層501b處形成有盲孔5〇3X,俾^吏 所欲形成之盲孔5 0 3得以連通至該導電層5〇ι。17100 全懋.ptc Page 11 1260960 MM 91137826^_ L] Φ Year ^ month ( 曰修五五, invention description (8), the surface of the insulating layer 502 can also be roughened first W surface e : = H Increasing the surface of the insulating layer 50 2 and the seed layer 504 or the circuit layer "force. When the thickness of the circuit layer 506 is too thick, if it is necessary, the grinding or etching method may be used to reduce its thick production. - - The second embodiment of the Ϊ ! ! ' ' ' ' 前述 前述 前述 前述 前述 前述 前述 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 绝缘 一 一 一 一 一 一 一 一 一 一 一 一 一 一 , , , , , , Providing an insulating layer... and forming a patterned conductive sound, 50b 501a, respectively, on the surface of the 曰 电 电 一 5 5 and the second surface 502b, while leaving a conductive place at a position where the blind hole 5 〇 3 is to be formed ^ 501 ' 50 la material, so that the blind hole to be formed to the conductive layer 50 501a. The file is not shown in Figure 6B, and the semi-additive method is used for the insulating layer 502 The first surface 5〇2a and the second surface 50 2b are formed into a seed layer 5〇4 and a barrier sheet 5 0 5° 9 as shown in FIG. 6C, via an electrochemical method such as electroplating or electroless plating. Forming the circuit layer 5 0 6 , 5 0 7 on the first surface 5 〇 2 a and the second surface % of the insulating layer 502 respectively to remove the resist layer 5 0 5 and the crystal covered thereby The layer 5 0 4, that is, the high-density double-layer circuit board of the present invention is completed. In the third embodiment of the present invention, the first surface of the insulating layer 5〇2 may also be used. And the second surface 50b has a patterned circuit layer 501 and a thin conductive layer 5〇1b. As shown in FIG. 7A, the thin conductive layer 5〇\b is preferably a copper junction (copper f0i 1). The thinner the thickness, the better, the thickness is preferably 5 micrometers thick, and a blind hole 5 〇 3X is formed at the thin conductive layer 501b, and the blind hole 503 formed by the 盲 吏 is connected to the conductive layer 5 〇ι.

17100 全懋.ptc 第12頁 1260960 . -91137826—姓土正 五、發明說明(9) 如第7B圖所示,再利用半加成法製作電路層,先在含 有該薄導電層501 b之絕緣層第二表面5 0 2 bJi形成—曰曰牙重> 504,再佈設上一圖案化之阻層505。 如第7C圖所示,經由如電鑛或無電錢方式等電化學方 法於該絕緣層5 0 2之第二表面5 0 2 b上形成電路層5 〇 8,再移 除該阻層5 0 5及其所覆蓋之晶種層5 04與薄導電胃層5〇 lb 完成另一應用本發明之高線路密度雙層電路板7 〇 〇。 於本發明之弟四貫施例中’係於%述之電路層5 〇 6、 5 0 7、5 0 8之材質亦可不需整個填滿盲孔5 〇 3,而僅為一覆 蓋層即可。如第8 A圖所示,製備一已佈有晶種層5 〇 4及阻 層5 0 5之電路板500 (請蒼閱弟5C圖),再利用電化學方 法如電鍵或無電鐘方式製作電路層50 9於該晶種層5 0 4上, 且該電路層5 0 9並未填滿該盲孔5 0 3。 如第8B圖所示,接著,移除該阻層5 0 5及其所覆蓋之 晶種層5 0 4,即完成另一應用本發明之高線路密度雙層電 路板8 0 0。 於半導體封裝件製程中,係可將前述之雙層電路板 500、 600、 700、 800應用於覆晶封裝(flip chip package)技術上。如第9A圖所示,於一典型之覆晶封裝 中,係將一設有銲墊9 0 2之半導體晶片9 0 1接置於該薄雙層 電路板5 0 0上,並以銲錫凸塊(solder bump) 9 0 3與該薄雙 層電路板5 0 0上之電路層5 0 1作電性連接,同時在該電路板 5 0 0相對接置有該晶片9 0 1之另一表面植置有銲錫球 (solder ball)905,且在該電路板50 0之表面上佈設有絕 緣保護層(solder mask layer)904,以保護該電路板50017100 全懋.ptc Page 12 1260960 . -91137826—Standard Orthodox 5, Invention Description (9) As shown in Figure 7B, the circuit layer is fabricated by semi-additive method, first containing the thin conductive layer 501 b The second surface of the insulating layer 5 0 2 bJi forms a tooth weight 504, and a patterned resist layer 505 is disposed. As shown in FIG. 7C, the circuit layer 5 〇8 is formed on the second surface 5 0 2 b of the insulating layer 502 via an electrochemical method such as an electric ore or a non-electricity method, and the resist layer 5 0 is removed. 5 and its seed layer 504 and the thin conductive stomach layer 5 〇 lb complete another application of the high line density double layer circuit board 7 本 of the present invention. In the four-part embodiment of the present invention, the material of the circuit layer 5 〇6, 507, 508, which is described in %, may not need to completely fill the blind hole 5 〇 3, but only a cover layer. can. As shown in FIG. 8A, a circuit board 500 having a seed layer 5 〇 4 and a resist layer 505 is prepared (please read the 5C picture), and then fabricated by an electrochemical method such as an electric key or an electric clockless method. The circuit layer 509 is on the seed layer 504, and the circuit layer 509 does not fill the blind hole 503. As shown in Fig. 8B, the resist layer 505 and the seed layer 504 covered thereby are removed, i.e., another high-density double-layer circuit board 800 to which the present invention is applied is completed. In the semiconductor package process, the aforementioned two-layer circuit boards 500, 600, 700, and 800 can be applied to flip chip package technology. As shown in FIG. 9A, in a typical flip chip package, a semiconductor wafer 90 provided with a pad 902 is placed on the thin double-layer circuit board 500, and solder bump is used. A solder bump 9 0 3 is electrically connected to the circuit layer 510 of the thin double-layer circuit board 500, and the other side of the chip 910 is oppositely connected to the circuit board 500. A solder ball 905 is implanted on the surface, and a solder mask layer 904 is disposed on the surface of the circuit board 50 to protect the circuit board 500.

17100 全懋.ptc 第13頁 1260960 修正 __ 案號_ 91137826 五、發明說明(10) 之表面線路(circuit lines)。 再者’如第9 B圖所示,於該電路板5 0 0中亦可將電路 層5 0 1移除,而形成另一薄雙層電路板5 0 0,,,同樣的,如 第9 C圖所示,俾將晶片9 0 1接置於電路板5 0 0 π上,以藉由 鮮錫凸塊9 0 3與該電路板500 ”表面上之電路層50 6相互電性 連接,同時在電路板5 0 0 ’’之另一表面上則植置有銲錫球 905,以形成另一覆晶封裝。 此外,前述之雙層電路板500、600、700、80 0亦可作 為核心電路板(core circuit board)以製作一增層式 (bui Id-up)多層電路板。請參閱第1〇圖,即為運用前述之 雙層電路5 0 0,8 0 0作為核心電路板所製作之增層式多層電 路板示意圖。如第1 0 A圖所示,為一增層式四層電路板 1 0 0 0 A示意圖,該四層電路板1 〇 〇 〇人係包含一電路板5 〇 〇及 兩增層結構1 0 0 1 ;該增層結構1 〇 〇 1則包含電路層丨〇 〇 2及絕 緣層1 0 0 3,且該增層結構1 〇 〇 1之電路層丨〇 〇 2則以導通孔 1 0 0 4與該核心電路板5 0 0之電路層5 0 6作電性連接。 同時’如第1 0 B圖所示,係以雙層電路板8 〇 〇作為核心 電路板所製作之增層式六層電路板1 〇 〇 〇 B示意圖。該六層 電路板1 0 0 0 B包含一核心電路板8 〇 〇及兩增層結構1 ;該 增層結構1 0 0 5則包含電路層1 〇 〇 6與絕緣層1 〇 〇 7,且該增層 結構1 0 0 5之電路層1 〇 〇 6間係以導通孔1 〇 〇 8作相互電性連曰 接。當然,上述之增層式多層電路板不僅侷限於四層及六 層電路板,亦可運用本發明之高線路密度雙層電路板作為 一核心電路板以製作各類增層式多層電路板。 綜上所述,本發明係揭露利用線路成形之半加成法製17100 Full 懋.ptc Page 13 1260960 Amendment __ Case No. _ 91137826 V. The circuit lines of the invention (10). Furthermore, as shown in FIG. 9B, the circuit layer 510 can also be removed from the circuit board 500 to form another thin double-layer circuit board 500, and, similarly, As shown in FIG. 9C, the wafer 901 is placed on the circuit board 500 π to electrically connect the circuit layer 50 6 on the surface of the circuit board 500 ′ by the bright tin bumps 903. At the same time, solder balls 905 are implanted on the other surface of the circuit board 500' to form another flip chip package. In addition, the above-mentioned double-layer circuit boards 500, 600, 700, 80 0 can also be used as Core circuit board to make a layered (bui Id-up) multi-layer circuit board. Please refer to Figure 1 for the use of the above-mentioned two-layer circuit 500, 800 as the core circuit board. A schematic diagram of a build-up multilayer circuit board produced as shown in FIG. 10A, which is a schematic diagram of a multi-layered four-layer circuit board 1000, which includes a circuit The plate 5 〇〇 and the two-layer structure 1 0 0 1 ; the build-up structure 1 〇〇 1 includes the circuit layer 丨〇〇 2 and the insulating layer 1 0 0 3 , and the circuit of the build-up structure 1 〇〇 1丨〇〇2 is electrically connected to the circuit layer 506 of the core circuit board 500 by the via hole 1 0 0 4. At the same time, as shown in the figure 10B, the double-layer circuit board 8 〇示意图A schematic diagram of a layered six-layer circuit board fabricated as a core circuit board. The six-layer circuit board 100B includes a core circuit board 8 〇〇 and two build-up structures 1; The structure 1 0 0 5 includes the circuit layer 1 〇〇 6 and the insulating layer 1 〇〇 7 , and the circuit layer 1 〇〇 6 of the build-up structure 1 0 0 5 is electrically connected via the via hole 1 〇〇 8 Of course, the above-mentioned multi-layered multi-layer circuit board is not limited to four-layer and six-layer circuit boards, and the high-density double-layer circuit board of the present invention can be used as a core circuit board to manufacture various types of build-up layers. Multilayer circuit board. In summary, the present invention discloses a semi-additive system using line forming.

17100全懋.ptc 第14頁 1260960 , _案號91137826 彳叫年4月 < 日__ 五、發明說明(11) 作一種薄雙層電路板之製程,同時該薄電路板亦可作為核 心電路板以應用於增層式多層電路板之製作,據此可提供 薄且高佈線密度之增層式多層電路板,其亦具有良好之可 靠度。同時,以上所述之具體實施例,僅係用以例釋本發 明之特點及功效,而非用以限定本發明之可實施範疇,在 未脫離本發明上揭之精神與技術範疇下,任何運用本發明 所揭示内容而完成之等效改變及修飾,均仍應為下述之申 請專利範圍所涵蓋。17100 全懋.ptc Page 14 1260960, _ Case No. 91138826 Howling April 4 < Day __ V. Invention Description (11) As a thin double-layer circuit board process, the thin circuit board can also be used as the core The circuit board is applied to the fabrication of a multi-layered multi-layer circuit board, whereby a multi-layered multi-layer circuit board with a thin and high wiring density can be provided, which also has good reliability. In the meantime, the specific embodiments described above are merely used to exemplify the features and functions of the present invention, and are not intended to limit the scope of the present invention, without departing from the spirit and scope of the present invention. Equivalent changes and modifications made by the disclosure of the present invention should still be covered by the scope of the following claims.

17100全懋.ptc 第15頁 1260960 / _案號91137826 年ι丨月 S日 修正_ 圖式簡單說明 【圖式簡單說明】 第1圖係習知技術中增層之多層電路板結構示意圖; 第2圖係另一習知技術中增層之多層電路板結構示意 圖, 第3 A圖係習知技術電鍍導通孔結構示意圖; 第3 B圖係習知技術中於電鍍層沈積後,於凹陷處填有 填充材之盲孔結構示意圖; 第3C圖係習知技術中完全填有導電材之盲孔結構示意 圖; 第4A圖至第4E圖係習知技術中用以製作較細電路之半 加成法製程示意圖; 第5 A圖至第5 E圖係本發明之高線路密度雙層電路板之 製法第一實施例示意圖; 第6A圖至第6C圖係本發明之高線路密度雙層電路板之 製法第二實施例示意圖; 第7A圖至第7C圖係本發明之高線路密度雙層電路板之 製法第三實施例示意圖; 第8A圖及第8B圖係本發明之高線路密度雙層電路板之 製法第四實施例示意圖; 第9 A圖係本發明之高線路密度雙層電路板應用於覆晶 封裝之結構示意圖; 第9B圖係本發明之高線路密度雙層電路板之另一實施 例示意圖; 第9C圖係利用第9B圖所示之雙層電路板以應用於覆晶 封裝之結構示意圖;17100 全懋.ptc Page 15 1260960 / _ Case No. 91138826 ι丨月S日修正 _ Simple description of the drawing [Simple description of the drawing] Figure 1 is a schematic diagram of the structure of the multi-layer circuit board in the conventional technology; 2 is a schematic diagram showing the structure of a multi-layer circuit board which is layered in another conventional technique, and FIG. 3A is a schematic diagram of a conventional electroplated via hole structure; FIG. 3B is a conventional technique in which a plating layer is deposited in a depression Schematic diagram of a blind hole structure filled with a filler; FIG. 3C is a schematic diagram of a blind hole structure completely filled with a conductive material in the prior art; FIGS. 4A to 4E are a half of a conventional circuit for making a finer circuit. Schematic diagram of the process of forming a process; FIG. 5A to FIG. 5E are schematic diagrams showing the first embodiment of the method for manufacturing a high-density double-layer circuit board of the present invention; FIGS. 6A to 6C are diagrams showing the high-density double-layer circuit of the present invention. A schematic diagram of a second embodiment of a method for manufacturing a board; FIGS. 7A to 7C are diagrams showing a third embodiment of a method for manufacturing a high-density double-layer circuit board of the present invention; FIGS. 8A and 8B are diagrams showing a high line density of the present invention. The fourth embodiment of the method for manufacturing a layer circuit board 9A is a schematic view showing the structure of a high-density double-layer circuit board of the present invention applied to a flip chip package; FIG. 9B is a schematic view showing another embodiment of the high-density double-layer circuit board of the present invention; The utility model utilizes the two-layer circuit board shown in FIG. 9B to apply to the structural diagram of the flip chip package;

17100 全懋.ptc 第16頁 1260960 _ 案號91137826 M +年Μ月日 〜^修正_ 圖式簡單說明 第1 0Α圖係本發明之高線路密度雙層電路板應用於增 層式四層電路板之結構示意圖;以及 第1 0 Β圖係本發明之高線路密度雙層電路板應用於增 層式六層電路板之結構示意圖。 【主要元件符號說明】 100, 2 0 0, 400 增 層 多 層電路板 101, 401 核 心 電 路板 102, 2 0 2, 411, 1001,1005 增 層 結 構 103, 106, 2 0 3, 2 0 6, 3 0 2, 3 0 3, 3 0 7, 3] 3 1 2, 40 2, 4 0 9, 5 0 6, 50 7, 5 0 8, 5 0 9, 1 0 0 2, 1 0 0 6 電 路 層 104, 107, 2 04, 207,301,306, 310, 4 0 5, 5 0 2絕緣層 105, 108, 2 0 5, 404, 1004, 1008 導 電 通 孔 201, 5 0 0, 電 路 板 208 通 孔 3 0 5, 309 填 充 材 308 電 鍍 層 313 導 電 材 40 3, 5 0 2, 1003 ,1007 絕 緣 層 4 0 6, 503 盲 孔 407 無 電 鍍 銅薄層 408, 505 阻 層 410 開 V 501 導 電 層 /電路層 5 0 2a 第 一 表 面 5 0 2b 第 ——— 表 面17100 全懋.ptc Page 16 1260960 _ Case No. 91138826 M + Year of the Moon ~ ^ Correction _ Schematic diagram of the 10th diagram of the present invention, the high line density double-layer circuit board is applied to the layered four-layer circuit The schematic diagram of the structure of the board; and the 10th drawing is a schematic diagram of the structure of the high-density double-layer circuit board of the present invention applied to the layered six-layer circuit board. [Major component symbol description] 100, 2 0 0, 400 build-up multilayer circuit board 101, 401 core circuit board 102, 2 0 2, 411, 1001, 1005 build-up structure 103, 106, 2 0 3, 2 0 6, 3 0 2, 3 0 3, 3 0 7, 3] 3 1 2, 40 2, 4 0 9, 5 0 6, 50 7, 5 0 8, 5 0 9, 1 0 0 2, 1 0 0 6 Circuit Layers 104, 107, 2 04, 207, 301, 306, 310, 4 0 5, 5 0 2 insulating layers 105, 108, 2 0 5, 404, 1004, 1008 conductive vias 201, 500, circuit board 208 vias 3 0 5, 309 filler 308 plating 313 conductive material 40 3, 5 0 2, 1003 , 1007 insulating layer 4 0 6, 503 blind hole 407 electroless copper thin layer 408, 505 resistive layer 410 open V 501 conductive layer / circuit layer 5 0 2a first surface 5 0 2b first — surface

17100全懋.ptc 第17頁 1260960 案號 91137826 月 C. 修正 圖式簡单說明 504 5 0 0,6 0 0,7 0 0,8 0 0,5 0 0,, 501a, 501b 901 902 903 904 90517100 全懋.ptc Page 17 1260960 Case No. 91138826 Month C. Corrective Schematic Description 504 5 0 0,6 0 0,7 0 0,8 0 0,5 0 0,, 501a, 501b 901 902 903 904 905

1 0 0 0 A 1 0 0 0 B 晶種層 雙層電路板 導電層 半導體晶片 銲墊 銲錫凸塊 絕緣保護層 鲜錫球 板板 路路 電電 層層 四六1 0 0 0 A 1 0 0 0 B seed layer double-layer circuit board conductive layer semiconductor wafer pad solder bump bump insulation layer tin ball board board road electric layer layer four

17100 全懋.ptc 第18頁17100 懋.ptc第18页

Claims (1)

1260960 _案號91137826 年6丨月k日 修正_ 六、申請專利範圍 1 . 一種高線路密度雙層電路板之製法,其步驟係包括: 提供一有機絕緣層,其具有第一表面及相對應之 第二表面,並在該有機絕緣層中形成有至少一盲孔, 以連通至該絕緣層第一表面上預設之第一導電層; 設置一晶種層(s e e d 1 a y e r )於該絕緣層之第二表 面上並覆蓋該盲孔; 設置一阻層(r e s i s t 1 a y e r )於該晶種層上,並使 該阻層圖案化形成有多數之開口以外露出欲沉積有電 路層及導電盲孔之該晶種層部分; 藉由電化學方法,同時於該阻層開口中之該晶種 層上形成電路層以及導電盲孔;以及 移除該阻層及其所覆蓋之晶種層。 2. 如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該有機絕緣層之第二表面於設置晶種層前 可先行表面粗化。 3. 如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該盲孔亦可分別形成於該有機絕緣層之第 一表面及第二表面,俾導通至相對另一表面上之導電 層。 4. 如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該絕緣層表面亦可具有一薄導電層。 5. 如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該盲孔内之導電層填滿該盲孔。 6. 如申請專利範圍第1項之高線路密度雙層電路板之製1260960 _ Case No. 91138826 6th month k-day correction _ VI. Patent application scope 1. A method for manufacturing a high-density double-layer circuit board, the steps of which include: providing an organic insulating layer having a first surface and corresponding a second surface, and at least one blind hole is formed in the organic insulating layer to communicate with a predetermined first conductive layer on the first surface of the insulating layer; a seed layer is disposed on the insulating layer a second surface of the layer and covering the blind via; a resist layer is disposed on the seed layer, and the resist layer is patterned to form a plurality of openings to expose a circuit layer to be deposited and conductive blind a portion of the seed layer of the hole; forming a circuit layer and a conductive via hole on the seed layer in the opening of the resist layer by an electrochemical method; and removing the resist layer and the seed layer covered thereby. 2. The method of claim 1, wherein the second surface of the organic insulating layer is roughened before the seed layer is disposed. 3. The method of claim 1, wherein the blind vias are respectively formed on the first surface and the second surface of the organic insulating layer, and the germanium is electrically connected to the opposite surface. Conductive layer on top. 4. The method of claim 1, wherein the surface of the insulating layer may have a thin conductive layer. 5. The method of claim 1, wherein the conductive layer in the blind via fills the blind via. 6. The system for high-density double-layer circuit boards as claimed in item 1 of the patent application 17]00 全懋.ptc 第19頁 1260960 / ____案號91137826 年^:月 V日 修正_ 六、申請專利範圍 法,其中,該盲孔内之導電層僅覆蓋於該盲孔表面。 7. 如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該雙層電路板可作為一核心電路板(c 〇 r e circuit board),以製作一增層式多層電路板。 8. 如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該導電層為金屬導電層。 9. 如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該晶種層可全部(f u 1 1 y )覆蓋於該盲孔及其 餘非盲孔區域。 1 0 ,如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該晶種層可部分覆蓋於該盲孔及其餘非盲 孔區域。 1 1.如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該晶種層係為無電鍍銅。 1 2 .如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該晶種層係為藏鑛(s p u 11 e r )銅。 1 3 .如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該晶種層係為把金屬微粒(p a r t i c 1 e )所構 成。 1 4 .如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該電化學方法係為無電鍍法及電鍍法之任 一者。 1 5 .如申請專利範圍第1項之高線路密度雙層電路板之製 法,其中,該電化學方法係為無電鍍法及電鍍法之交17]00 Full 懋.ptc Page 19 1260960 / ____ Case No. 91138826 ^: Month V Day Amendment _ 6. Patent application scope method, in which the conductive layer in the blind hole covers only the surface of the blind hole. 7. The method of claim 1, wherein the double-layer circuit board can be used as a core circuit board to form a build-up multilayer circuit board. . 8. The method of claim 1, wherein the conductive layer is a metal conductive layer. 9. The method of claim 1, wherein the seed layer can cover all of the blind vias and the remaining non-blind via regions. 1 0. The method of claim 1, wherein the seed layer can partially cover the blind hole and the remaining non-blind hole regions. 1 1. The method of claim 1, wherein the seed layer is electroless copper. 1 2 . The method of claim 1, wherein the seed layer is a s p u 11 e r copper. The method of claim 1, wherein the seed layer is formed by metal particles (p a r t i c 1 e ). 1 . The method of claim 1, wherein the electrochemical method is any one of electroless plating and electroplating. 1 5 . The method of claim 1 , wherein the electrochemical method is an electroless plating method and an electroplating method. 17100 全懋.ptc 第20頁 1260960 〆 _案號9Π37826 年」月 s日 修正 六'申請專利範圍17100 全懋.ptc Page 20 1260960 〆 _ Case No. 9Π37826" Month s day Amendment Six's patent application scope 互使用。 17100 全懋.ptc 第21頁 1260960 -一_fjmjl7826 44年勹月5曰 修正__ 四、中文發明摘要(發明名稱:高線路密度雙層電路板之製法) 一種高線路密度雙層電路板之製法,主要係提供一有 機絕緣層’其第一表面至少具有一盲孔,且該盲孔之底部 連通至該絕緣層第一表面上預設之第一導電層;再於該絕 緣層之弟_表面設置一晶種層(seed layer),且該晶種層 係全部或部分覆蓋該盲孔;接著,設置一圖案化 (pattern )之阻層(resist layer )於該晶種層上,且該阻 層至少包含有一開口於該盲孔位置;再以電化學方法形成 電路層於該阻層開口中;之後,移除該阻層及其所覆蓋之 晶種層,俾完成一高線路密度雙層電路板。同時,可利用 遠雙層電路板作為一核心電路板(core circuit board)用 以製作增層式(build-up)多層電路板。 本案代表圖:第5E圖 500 雙層電路板 50 1 電路層 5 0 2 絕緣層 5 0 6 電路層 +六、英文發^^~~(發明名稱:METHOD FOR FORMING HIGH DENSITY BI-LAYER CIRCUIT^ BOARD) A method for forming high density bi-layer circuit board is proposed. An organic insulating layer is formed with at least a blind via therethrough, wherein the bottom end of the blind via is connected to a second conductive layer formed on a second surface of the circuit board. A seed layer is applied over a first surface of the circuit board and fully or partial 1y covers theUse each other. 17100 全懋.ptc Page 21 1260960 -一_fjmjl7826 44 years of the month 5曰 Amendment__ IV, Chinese invention summary (invention name: high line density double-layer circuit board method) A high line density double-layer circuit board The method mainly comprises providing an organic insulating layer having a first surface having at least one blind hole, and a bottom of the blind hole communicating with a predetermined first conductive layer on the first surface of the insulating layer; a seed layer is disposed on the surface, and the seed layer covers the blind hole in whole or in part; then, a resist layer is disposed on the seed layer, and The resist layer includes at least one opening in the blind hole; electrochemically forming a circuit layer in the resist layer opening; thereafter, removing the resist layer and the seed layer covered thereby, and completing a high line density Double layer circuit board. At the same time, a remote double-layer circuit board can be used as a core circuit board for making a build-up multilayer circuit board. Representative diagram of the case: Figure 5E Figure 500 Double-layer circuit board 50 1 Circuit layer 5 0 2 Insulation layer 5 0 6 Circuit layer + six, English hair ^^~~ (Invention name: METHOD FOR FORMING HIGH DENSITY BI-LAYER CIRCUIT^ BOARD An organic insulating layer is formed with at least a blind via therethrough, the bottom end of the blind via is connected to a second conductive layer formed on a second surface of The circuit board. A seed layer is applied over a first surface of the circuit board and fully or partial 1y covers the 17100全懋.ptc 第2頁17100 懋.ptc Page 2
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