TW592007B - Build-up circuit board with conductive barrier structure and method for fabricating the same - Google Patents

Build-up circuit board with conductive barrier structure and method for fabricating the same Download PDF

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Publication number
TW592007B
TW592007B TW92128800A TW92128800A TW592007B TW 592007 B TW592007 B TW 592007B TW 92128800 A TW92128800 A TW 92128800A TW 92128800 A TW92128800 A TW 92128800A TW 592007 B TW592007 B TW 592007B
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Taiwan
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layer
conductive
circuit
circuit board
metal
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TW92128800A
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Chinese (zh)
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Ruei-Chih Chang
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Phoenix Prec Technology Corp
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Abstract

A build-up circuit board with conductive barrier structure and a method for fabricating the same are proposed. A patterned first resist layer is formed on a conductive base and a first circuit layer is formed within the openings of the first resist layer by an electroplating process via the conductive base. Then, the first resist layer is removed and at least an insulating layer with a plurality of openings for exposing the first circuit layer is formed on the first circuit layer via a build up process. A conductive metal layer is formed within the openings by an electroplating process via the conductive base, and a seed layer and a patterned second resist layer are formed in turn on the surface of the insulating layer and the conductive metal layer. A second circuit layer is formed within the openings of the second resist layer by an electroplating process and electrically connected to the first circuit layer via the conductive metal layer. The second resist layer and the conductive film underneath the second resist layer are removed and a metal barrier layer is formed on the surface of the second circuit layer. By the arrangement, it can prevent metal migration and shrinkage of the circuit layer owing to an etching process.

Description

592007592007

【發明所屬之技術領域】 本發明係有關於一種具 及其製法’尤指一種在非對 面形成有阻障層,以阻絕金 及其製作方法。 導電性阻障結構之增層電路 稱結構之增層電路板之電路| 屬粒子遷移現象之電路板結^ 【先前技術】 由於通訊、網路及電腦等各式可攜式(p〇rtaMe) 口口如行動书活、手提電腦、手提錄放影機或個人數位 理(Personal digital assistant)等的大幅成長,因此, 這些電子產品之製作便需要使用比以前更小、更薄的電路 板及電子元件,而隨著縮小化之趨勢,開發細線路(Fi μ circuit)、高密度與小孔徑之封裝基板,無疑是積體電路 (1C)產業乃至其他相關電子產業進入下一世代技術之重 研發課題。 而在電路板製造業界,為達此一目標,於是發展出一 種增層技術(Bui ld-up),所謂的增層技術基本上是指在一 核心板表面上交互堆疊多層絕緣層及導電層,再於絕緣層 衣作電性導通孔以提供各導電層間之電性連接。 為達到將可靠的導通孔設計在多層電路板之製程,第 2 A至2 C圖所示者係為業界中常見的三種導通孔製程,分述 如下: 第2A圖所示為一電鍍導通孔(piated thr〇ugh hole, PTH )之示意圖,該導通孔之開口延伸穿越絕緣層2 〇 1及覆 於其表面之電路層20 2及203,而由電鍍金屬20 4構成之導[Technical field to which the invention belongs] The present invention relates to a method and a method for manufacturing the same ', and more particularly to a barrier layer formed on the opposite side to prevent gold and a manufacturing method thereof. The layered circuit of the conductive barrier structure is called the circuit of the layered circuit board of the structure | The circuit board is a particle migration phenomenon. [Previous technology] Because of communication, network and computer and other portable (p〇rtaMe) The rapid growth of mouthpieces such as mobile books, laptops, portable video recorders, or personal digital assistants has led to the production of these electronic products using smaller and thinner circuit boards and electronics than before. Components, and with the trend of shrinking, the development of thin circuit (Fi μ circuit), high-density and small-aperture package substrates is undoubtedly the integrated circuit (1C) industry and other related electronics industries into the next generation of technology R & D Topic. In the circuit board manufacturing industry, in order to achieve this goal, a layer-up technology (Bui ld-up) has been developed. The so-called layer-up technology basically refers to the interactive stacking of multiple insulating layers and conductive layers on the surface of a core board. Then, an electrical via is formed in the insulating layer to provide electrical connection between the conductive layers. In order to achieve the process of designing reliable vias in a multilayer circuit board, the ones shown in Figures 2A to 2C are three common via processes in the industry, which are described as follows: Figure 2A shows a plated via. (Piated thrugh hole, PTH). The opening of the via extends through the insulating layer 201 and the circuit layers 20 2 and 203 covering the surface.

]7446 全懋.ptd 第7頁 592007 五、發明說明(2) 電層則形成於該導通孔之側壁。在電錢完成後,再填充一 導電或不導電填充材2 0 5填滿殘留空隙,以確保導通孔之 可靠度。 第2B圖所示為另一種導通孔形式,即所謂盲孔(β丨丨nd via),該盲孔之開口延伸至絕緣層2〇6内部,但未穿透電 路層207。在電鍍層20 8沈積之後,填充一導電或不導電之 填充材2 0 9於凹陷處,以為後續製裎提供適當平坦度。 弟2 C圖所示為弟二種導通孔形式,其中盲孔之開口延 伸穿越絕緣層2 1 0,但亦未穿透電路層2丨丨。在導通孔填入 導電材21 3之後,再形成電路層212。 上述習知技術需填入填充材於通孔之空隙内,然而在 通孔直徑低於0 · 0 5 m m以下時,其製程將變得難以實施; 因此一般大量製造生產時,上述三種製程必須於通孔直徑 在0 · 7 5 mm以上方可實施。在此情況之下,電路板因導通 孔尺寸之製程技術的限制,而無法達到更高佈線密度之要 求。 另相較於傳統之減成(S u b s t r a c t i v e )钱刻法,目前產 業界係採可製造更細線路之加成(A d d i t i v e )法,以因應更 高佈線密度之電路板;典型方法係以無電鍍銅在絕緣電路 板上形成一晶種層(S e e d 1 a y e r ),再於絕緣層上直接形成 電路層,此一方法可再分為完全加成法(Fully-additive) 及半加成法(Semi-additive)兩種製程。目前習知可製作 較細電路之半加成法之典型製程,係如第3圖所示;首 先,請參閱第3 A圖,一核心電路板3 0 1包括有已圖案化之] 7446 全懋 .ptd Page 7 592007 V. Description of the Invention (2) An electrical layer is formed on the side wall of the via. After the power money is completed, a conductive or non-conductive filler material 205 is filled to fill the remaining gaps to ensure the reliability of the vias. Figure 2B shows another form of via hole, the so-called blind via (β 丨 丨 nd via). The opening of the blind via extends into the insulating layer 206, but does not penetrate the circuit layer 207. After the plating layer 20 8 is deposited, a conductive or non-conductive filler material 209 is filled in the recess to provide proper flatness for subsequent fabrication. Figure 2C shows two types of vias. The opening of the blind hole extends through the insulating layer 2 10 but does not penetrate the circuit layer 2 丨 丨. After the via holes are filled with the conductive material 213, the circuit layer 212 is formed. The above-mentioned conventional technology needs to be filled into the gap of the through hole. However, when the diameter of the through hole is less than 0.5 mm, the manufacturing process will become difficult to implement. Therefore, in general mass production, the above three processes must be implemented. It can be implemented when the diameter of the through hole is above 0 · 7 5 mm. In this case, the circuit board cannot meet the requirements of higher wiring density due to the limitation of the process technology of the via size. In addition, compared to the traditional Subtractive money engraving method, the industry currently adopts the Additive method that can produce finer lines to respond to higher wiring density circuit boards; the typical method is to Copper electroplating forms a seed layer (Seed 1 ayer) on the insulating circuit board, and then directly forms a circuit layer on the insulating layer. This method can be further divided into fully-additive and semi-additive methods (Semi-additive) two processes. At present, the typical process of semi-additive method for making thinner circuits is shown in Figure 3. First, please refer to Figure 3A. A core circuit board 3 01 includes a patterned one.

17446 全懋.ptd 第8頁 592007 五、發明說明(3) 電路層3 0 2,位於兩電路層3 0 2間之絕緣層3 0 3,以及一作 為電路層3 0 2間之電性内連接之電鍍導通孔3 0 4。並提供兩 有機絕緣層3 0 5真空壓合在核心電路板3 0 1之表面,如第3 B 圖所示;接著,請參閱第3 C圖,於該有機絕緣層3 0 5形成 多數盲孔3 0 6 ’並於有機絕緣層3 0 5表面形成一無電鍍銅薄 層3 0 7,且於該無電鍍銅薄層3 0 7上佈設一圖案化之阻層 (Resist layer) 308。再利用電鍍方式在阻層開口 (Opening) 310内形成電路層3 0 9,如第3D圖所示;之後, 再移除阻層3 0 8及部分無電鍍銅薄層3 〇 7,即完成制 々衣1下~择 層式之四層電路板300’該四層電路板3〇〇係包含— 9 艰心φ 路板3 0 1及兩增層結構3 1 1,而該增層結構3 1 1包含一有* 絕緣層3 0 5及一電路層3 0 9,且該電路層3 0 9係由習知+機 路形成(Circuit f〇rmat i〇n)半加成法所製作而成, 楚 3 E圖所示。 第 前述製程所製成之封裝基板已可將電路層之導線 加工至2 0〜3 0# m之間,而可適用於較高效能之晶片與=寸 件,惟若欲將導線精度再往上提昇藉以提高佈線密度,、裝 有製程精度無法克服之問題;此外,於該些絕緣層中則 以形成盲孔時’易殘留有大量膠渣,而該膠渣在^齡、孔 會成為盲孔與内層導體導通不良原因,造成連接性吳=後 而導致斷線,導致基板製程之困難度上昇,與製程=甚 下降。 反平之 再者,上述習知半加成法等增層技術中作為電 電路層之電流導通路徑之晶種層,亦即無電鍍銅薄^ f成 曰’由17446 Quan 懋 .ptd Page 8 592007 V. Description of the invention (3) Circuit layer 3 0 2 is located between the insulating layer 3 0 2 between the two circuit layers 3 0 2 and one is electrically within the circuit layer 3 2 2 Connected plated vias 3 0 4. Two organic insulating layers 3 0 5 are vacuum-bonded on the surface of the core circuit board 3 1 1 as shown in FIG. 3 B; then, referring to FIG. 3 C, a majority of blinds are formed on the organic insulating layer 3 5. The hole 3 06 ′ forms an electroless copper thin layer 3 7 on the surface of the organic insulating layer 3 05, and a patterned resist layer 308 is disposed on the electroless copper thin layer 3 7. Then, a plating layer is used to form a circuit layer 309 in the opening 310, as shown in FIG. 3D. After that, the resistance layer 308 and a part of the electroless copper thin layer 307 are removed, and the process is complete. Bottoms 1 ~ 300-layer four-layer circuit board 300 'The four-layer circuit board 300 series contains-9 hard-working φ circuit board 3 0 1 and two layered structures 3 1 1, and the layered structure 3 1 1 includes an * insulating layer 3 0 5 and a circuit layer 3 0 9, and the circuit layer 3 0 9 is made by the conventional + mechanical circuit (Circuit f〇rmat i〇n) semi-additive method As shown in Figure 3E. The package substrate made by the aforementioned process can already process the wires of the circuit layer to between 20 ~ 3 0 # m, and it can be applied to higher-performance chips and = inch pieces, but if you want to further the precision of the wires In order to improve the wiring density, the mounting process accuracy cannot be overcome; in addition, in these insulating layers, when a blind hole is formed, a large amount of slag is easy to remain, and the slag will become The cause of poor conduction between the blind hole and the inner layer conductor caused the connection to be broken and the wire was broken, which caused the difficulty of the substrate manufacturing process to increase, and the manufacturing process to decrease. In addition, the seed layer used as the current conduction path of the electric circuit layer in the above-mentioned conventional semi-additive layering technology, that is, the electroless copper thin layer ^ f 成

592007 五、發明說明(4) 於其材料係與所形成之電 續钱刻移除該晶種層時, 而收縮變形,此一情形尤 之電路板時,更將造成線 另為達電子產品縮小 線路設計越來越密集,且 制’若線路複雜度提高, 層與層之間也越來越薄小 與層之間越薄,因材料的 線路之導電的銅粒子即有 層,使得兩相鄰線路之間 (Copper migration)的現 而由於兩線路之間, 絕緣部份較為狹小,當有 緣部份的絕緣層内有導電 如此一來,則容易造成兩 路,使得電路板無法正常 粒子遷移的現象會越加明 斷地增加,使得絕緣部份 果。 且隨著線路高密度發 層之間或線與線之間,因 薄,如何克服鋼原子遷移 展之急待解決的重要課題 路層相同,俱為金屬銅, 同時將會造成該電路層受 其對於形成細線路且高積 路之嚴重收縮與變形。 化及功能增加之需求’電 受電路板面積及厚度大小 則必須以增層的方式增加 ,而電路板之線路越緊密 特性,於線路電流導通時 可能會遷移擴散而滲入I 的絕緣部份有銅粒子遷移 象。 或層與層之間相當密集, 銅粒子遷移現象產生時, 的銅粒子,則使絕緣效果 線路之間’或層與層之間 動作;且隨著使用時間增 顯’使得絕緣部份内的鋼 逐漸有導電性而失去絕緣 展趨勢,使得增層電路板 材料的極限以及絕緣層越 的現象’已成為未來電孑 而在後 到側# 集密度 路板之 的限 ,因此 ,或層 ,構成 絕緣 相對地 造成絕 降低’ 形成短 j]XJ 9 ^ 粒孑不 的效 的層與 來越 產品發592007 V. Description of the invention (4) When the seed layer is engraved by removing the material layer and the electrical continuum formed, it shrinks and deforms. This situation, especially for circuit boards, will cause another line of electronic products. The design of shrinking circuits is becoming more and more dense, and if the complexity of the circuits increases, the layers between layers become thinner and thinner. The conductive copper particles of the material lines have layers, which makes the two The current of Copper migration is due to the narrowness of the insulation between the two lines. When there is electrical conduction in the insulation layer of the edge part, it is easy to cause two paths, making the circuit board unable to properly particles. The phenomenon of migration will increase more and more clearly, making the insulation partly effective. And with the high-density layer between the lines or between the lines, because of the thinness, how to overcome the important issue of the steel atom migration exhibition to be solved is the same road layer, which is all metallic copper, and it will cause the circuit layer to suffer. It severely shrinks and deforms the formation of thin lines and high accumulation paths. Requirements for increasing the number of circuit boards and functions. The area and thickness of the receiving circuit board must be increased by adding layers. The tighter the circuit board's characteristics, the more likely it will migrate and diffuse and infiltrate the insulating part of I when the line current is conducted. Copper particles migrate like. Or the layers are very dense. When the copper particles migrate, the copper particles cause the insulation effect to move between the lines or between the layers; and with the increase of the use time, it causes the Steel gradually has electrical conductivity and loses the tendency of insulation development, making the limits of layered circuit board materials and the phenomenon of insulation layers' becoming the limit of future electrical circuits and back to the side # the density of circuit boards, so, or layers, Constitute the insulation to relatively reduce the formation of the formation of short j] XJ 9 ^ ineffective layers and more and more products

]7446 全懋.ptd 第10頁 592007 五、發明說明(5) 【發明内容】 鑑於前述習知技術之缺失,本發明之主要目的在於提 供一種具導電性阻障結構之增層電路板及其製法,係藉由 金屬阻障層將電路板中電路層包覆隔絕,俾抑制金屬粒子 遷移現象以避免造成短路或干擾的情況,使多層電路板之 線路得以密集佈設,且使層與層之間得更薄小,俾以製成 更多層之電路板。 本發明之又一目的在於提供一種具導電性阻障結構之 增層電路板及其製法,藉以避免蝕刻移除作為電鍍導通用 之晶種層時,亦會對所形成之電路層產生破壞等問題。 本發明之再一目的在於提供一種具導電性阻障結構之 增層電路板及其製法,係於電路層表面包覆有金屬阻障 層,俾得藉由金屬阻障層增強電路層與絕緣層之附著力。 本發明之另一目的在於提供一種具導電性阻障結構之 增層電路板及其製法,係於電路層之間的絕緣層先形成開 口 ,再於開口内電鍍形成導電金屬層,俾可藉由導電金屬 層電性連接絕緣層兩側之電路層,而無習知通孔結構以簡 化製程。 本發明之另一目的在於提供一種具導電性阻障結構之 增層電路板及其製法,藉以形成一具堆疊通孔與細線路之 非對稱結構。 為達上述之目的,本發明係提供一種具導電性阻障結 構之增層電路板及其製法,較佳之實施步驟包括: 提供一導電基層(Conductive base),並於其上形成] 7446 全懋 .ptd Page 10 592007 V. Description of the invention (5) [Summary of the invention] In view of the lack of the conventional technology, the main purpose of the present invention is to provide a layered circuit board with a conductive barrier structure and its The manufacturing method is to cover and isolate the circuit layer in the circuit board by a metal barrier layer, and suppress the migration of metal particles to avoid short circuits or interference, so that the wiring of the multilayer circuit board can be densely arranged, and Space is thinner and thinner to make more layers of circuit boards. Another object of the present invention is to provide a layered circuit board with a conductive barrier structure and a manufacturing method thereof, so as to avoid etching and removing the seed layer that is commonly used for electroplating, and also damage the formed circuit layer. problem. Another object of the present invention is to provide a layered circuit board with a conductive barrier structure and a method for manufacturing the same. The circuit layer is covered with a metal barrier layer, so that the circuit layer and the insulation can be enhanced by the metal barrier layer. Layer adhesion. Another object of the present invention is to provide a layered circuit board with a conductive barrier structure and a method for manufacturing the same. The insulating layer between the circuit layers first forms an opening, and then a conductive metal layer is formed by electroplating in the opening. The conductive metal layer is electrically connected to the circuit layers on both sides of the insulating layer, and the via structure is not known to simplify the manufacturing process. Another object of the present invention is to provide a build-up circuit board with a conductive barrier structure and a method for manufacturing the same, so as to form an asymmetric structure with stacked through holes and fine lines. In order to achieve the above object, the present invention provides a layered circuit board with a conductive barrier structure and a method for manufacturing the same. The preferred implementation steps include: providing a conductive base layer and forming a conductive base layer thereon;

]7446 全懋.ptd 第11頁 592007 五、發明說明(6) 圖案化之第一阻層,使該第一阻層形成有開口以外露出該 導電基層,並透過該導電基層以在該開口中電鍍形成第一 電路層,然後移除該第一阻層,俾使第一電路層顯露出 來,再利用增層製程(Build-up process)以於該第一電路 層上形成至少一圖案化絕緣層,且該絕緣層具有開口以外 露出覆蓋於其下之電路層,並於該開口内電鍍形成一導電 金屬層,接著在該絕緣層及導電金屬層表面形成一晶種層 (Seed layer),再於該晶種層表面形成一圖案化之第二阻 層,且該第二阻層具有開口以外露出該晶種層,俾於該開 口内電鍍形成第二電路層,然後移除該第二阻層及其所覆 蓋之晶種層俾使該第二電路層顯露出來,再於第二電路層 表面形成金屬阻障層。之後可持續在該第二電路層上形成 絕緣層與電路層,並在該電路層層表面形成有金屬阻層 層,而在完成電鍍製程後即可移除該作為電鍍電流導通路 徑之導電基層,以外露出該第一電路層表面,以完成本發 明之具導電性阻障結構之增層電路板。 經由前述製程,本發明亦提供一種具導電性阻障結構 之增層電路板,該電路板主要係包括: 一第一電路層,係透過一導電基層(Conductive base)以電鍍方式形成;至少一絕緣層,係形成在該第一 電路層上,且該絕緣層中具有藉由該導電基層以電鍍方式 形成之導電金屬層以電性連接至第一電路層;至少一晶種 層(Seed layer ),係圖案化形成在該絕緣層表面上,並使 該晶種層電性連接至導電金屬層;至少一第二電路層,係] 7446 全懋 .ptd Page 11 592007 V. Description of the invention (6) A patterned first resistive layer is formed so that the conductive resistive layer is exposed outside the opening of the first resistive layer, and the conductive resistive layer is passed through the conductive resistive layer in the opening. The first circuit layer is formed by electroplating, and then the first resistance layer is removed to expose the first circuit layer. Then, a build-up process is used to form at least one patterned insulation on the first circuit layer. Layer, and the insulating layer has a circuit layer exposed underneath the opening, and a conductive metal layer is electroplated in the opening, and then a seed layer is formed on the surface of the insulating layer and the conductive metal layer, Then, a patterned second resist layer is formed on the surface of the seed layer, and the second resist layer has an opening to expose the seed layer. The second resist layer is electroplated in the opening to form a second circuit layer, and then the second layer is removed. The resistive layer and the seed layer covered by the resistive layer expose the second circuit layer, and then a metal barrier layer is formed on the surface of the second circuit layer. After that, an insulating layer and a circuit layer can be continuously formed on the second circuit layer, and a metal resist layer is formed on the surface of the circuit layer. After the electroplating process is completed, the conductive base layer can be removed as a conductive path for the plating current. The surface of the first circuit layer is exposed outside to complete the layered circuit board with a conductive barrier structure of the present invention. Through the aforementioned process, the present invention also provides a layered circuit board with a conductive barrier structure. The circuit board mainly includes: a first circuit layer, which is formed by electroplating through a conductive base; at least one An insulating layer is formed on the first circuit layer, and a conductive metal layer formed by the conductive base layer in an electroplating manner is electrically connected to the first circuit layer; at least one seed layer ), Is patterned on the surface of the insulating layer, and electrically connects the seed layer to the conductive metal layer; at least one second circuit layer,

17446 全懋.ptd 第12頁 592007 五、發明說明(7) 藉由該導電基層以形成在該晶種層上,並藉由該導電金屬 層電性連接至該第一電路層;以及至少一金屬阻障層,係 包覆在該第二電路層表面。 由於本發明中在電路層表面包覆有金屬阻障層,例如 鉻(Cr)、鎳(Ni)、鈷(Co)、鈀(Pd)、鈕(Ta)、鈦(Ti)所構 成之群組之其中一者,以抑制層間或相鄰電路間金屬粒子 遷移的現象,因此電路板中絕緣層將可更輕薄,故得以製 作更輕薄的多層電路板。同時該金屬阻障層(例如使用鉻 金屬)除了得用來抑制金屬粒子遷移的現象外,亦可用以 增強電路層與絕緣層之附著力,使該電路層得緊密結合在 絕緣層上以避免產生脫離的情況,因此得有較佳的使用效 果。再者,於本發明之增層技術中作為電鍍形成電路層之 電流導通路徑.用之晶種層材質係可採用不同於電路層銅材 質之金屬阻障材質,俾在後續蝕刻移除部分晶種層時,得 以避免該電路層因側姓而收縮變形(S h r i n k a g e ),而又可 提供形成於該晶種層上之電路層良好抑制金屬粒子遷移效 果;且可藉由絕緣層之導電金屬層電性連接增層間之電路 層,而無習知通孔結構以簡化製程。 此外,本發明係在導電基層上增層製作第一、第二電 路層,或更多層,俾僅在該導電基層之單一表面上進行增 層製程,而為一上、下非對稱結構。 【實施方式】 為使本發明之目的、特徵及功效,能更進一步的瞭解 與認同,茲配合圖式詳細說明如后。當然,本發明可以多17446 Quan 懋 .ptd Page 12 592007 V. Description of the invention (7) The conductive base layer is formed on the seed layer, and the conductive metal layer is electrically connected to the first circuit layer; and at least one The metal barrier layer is covered on the surface of the second circuit layer. In the present invention, the surface of the circuit layer is covered with a metal barrier layer, such as a group composed of chromium (Cr), nickel (Ni), cobalt (Co), palladium (Pd), button (Ta), and titanium (Ti). One of them is to suppress the migration of metal particles between layers or adjacent circuits, so the insulating layer in the circuit board can be thinner and lighter, so that a thinner and lighter multilayer circuit board can be manufactured. At the same time, the metal barrier layer (for example, using chromium metal) can be used to inhibit the migration of metal particles, and can also be used to enhance the adhesion between the circuit layer and the insulating layer, so that the circuit layer is tightly bonded to the insulating layer to avoid Occurrence of detachment results in better use. Furthermore, in the layer-increasing technology of the present invention, it is used as a current conduction path for forming a circuit layer by electroplating. The material of the seed layer can be a metal barrier material different from the copper material of the circuit layer. When seeding the layer, the circuit layer can be prevented from shrinking due to its side name, and the circuit layer formed on the seed layer can provide a good effect of suppressing the migration of metal particles; and the conductive metal of the insulating layer can be used. The layers are electrically connected to increase the circuit layer between layers, and there is no known via structure to simplify the process. In addition, the present invention is to build a first, a second circuit layer, or more layers on a conductive base layer, and only performs a build-up process on a single surface of the conductive base layer, and has an upper and lower asymmetric structure. [Embodiment] In order to make the purpose, characteristics and effects of the present invention more understandable and agreeable, the detailed description with the drawings is as follows. Of course, the present invention can be many

17446 全懋.ptd 第13頁 592007 五、發明說明(8) 種形式貫施之’以下所述係為本發明之較佳實施例,而非 用以限制本發明之範圍,合先敘明。 請參閱第1 A圖至1 K圖,為本發明實施例之具導電性阻 障結構之製程方法剖面示意圖。 如第1 A圖所示’首先提供一導電基層(Conductive base)10,該導電基層10材質主要係為金屬銅,且該導電 基層1 0主要係作用為後續在電路板中電鍍形成電路層之主 要電流傳導路徑。 於該導電基層10之一面形成圖案化之第一阻層 (Resist layer)ll,俾使該第一阻層11形成有複數開口 1 1 0以外露出該導電基層1 0。該第一阻層1 1可例如為乾膜. 或液態光阻等之光阻層(Photoresist),並可藉由曝光 (Exposure)及顯景多(Development)等圖案化製程使該第一 阻層1 1形成有複數個開口 1 1 0,藉以顯露出部分導電基層 10°17446 Quan 懋 .ptd Page 13 592007 V. Description of the Invention (8) Implementation of various forms ′ The following description is a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Please refer to FIG. 1A to FIG. 1K, which are schematic cross-sectional views of a manufacturing method of a conductive barrier structure according to an embodiment of the present invention. As shown in Figure 1A, 'a conductive base layer 10 is first provided. The material of the conductive base layer 10 is mainly metallic copper, and the conductive base layer 10 is mainly used for subsequent electroplating in a circuit board to form a circuit layer. The main current conduction path. A patterned first resist layer 11 is formed on one surface of the conductive base layer 10, and the first base layer 11 is formed with a plurality of openings 1 10 to expose the conductive base layer 10. The first resist layer 11 may be, for example, a dry film or a photoresist layer such as a liquid photoresist, and the first resist layer may be made by a patterning process such as exposure and development. The layer 11 is formed with a plurality of openings 1 1 0 to expose a part of the conductive base layer 10 °

如第1B圖所示’以電鐘方式(Electroplating)透過該 導電基層1 0作為電流傳導路徑以於該第一阻層丨丨之開口 110中電鑛形成第一電路層13’而該第一電路層1 3之材巧 主要係為電鍍金或鎳/金金屬層甚或再加鑛銅層,彳列如先 電鍵一層金後’再於其上電鍵一層鎳與銅層,俾於最终 鍍製程完成而移除該導電基層1 0時得以使該第_電 > 中之金或鎳/金金屬層顯露於該電路板表面,俾作 曰 接置導電元件之電性連接墊。 ^ W 如第1C圖所示,接著移除該第_阳猛】】θ 1且層1 1,俾顯露出該As shown in FIG. 1B, 'Electroplating through the conductive base layer 10 as a current conduction path to form a first circuit layer 13 in the opening 110 of the first resistive layer 丨 and the first The material of the circuit layer 1 3 is mainly electroplated gold or nickel / gold metal layer or even copper layer. The queue is as follows: firstly bond a layer of gold and then bond a layer of nickel and copper on top of it, and finish the final plating process. When the conductive base layer 10 is removed and completed, the gold or nickel / gold metal layer in the first electrical layer is exposed on the surface of the circuit board, and is used as an electrical connection pad for connecting conductive elements. ^ W as shown in Figure 1C, and then remove the _ Yang Meng]] θ 1 and layer 1 1, 俾 revealed this

17446 全懋.ptd 592007 五、發明說明(9) 第一電路層13。 如第1D圖所示,於顯露之第一電路層13上形成一圖案 化的第一絕緣層1 4,且該絕緣層1 4上具有開口 1 4 0以外露 出部分第一電路層1 3。其中該第一絕緣層1 4可為一感光性 (P h 〇 t 〇 - s e n s i t i v e )絕緣層,例如為光顯像樹脂 (P h o t o i m a g e a b 1 e r e s i η )等材質,並藉由微影技術對該感 光性絕緣層進行曝光(Exposure)、顯影(Development)等 製程以選擇性形成有開口 1 4 0,俾使該第一電路層1 3顯露 出該開口 1 4 0。此外,該絕緣層亦或為一熱固樹脂 (Thermosetting resin)以供利用雷射鑽孔(Laser- via)形 成開口 1 4 0,惟該開口 1 4 0最佳係以感光性絕緣層經由微影 技術加以形成。 如第1E圖所示,進行電鍍製程(Electroplating)以透 過該導電基層1 0作為電流傳導路徑俾於該第一絕緣層1 4之 開口 1 4 0内形成一導電金屬層1 4 1,且該導電金屬層1 4 1係 電性連接至該第一電路層1 3。 接著在第一絕緣層1 4及導電金屬層141外表面形成一 晶種層(Seed layer)15,且該晶種層15係與該導電金屬層 141電性連接,俾藉由該導電基層、第一電路層、導電金 屬層與晶種層作為一電鍍形成後續圖案化增層結構所需之 電流傳導路徑。 該晶種層1 5可藉由物理氣相沈積(PVD )、化學氣相沈 積(C V D )、無電鍍或化學沈積等方式形成,例如濺鍍 (Sputtering)、蒸鍵(Evaporation)、電弧蒸氣沈積(Arc17446 Quan 懋 .ptd 592007 V. Description of the invention (9) First circuit layer 13. As shown in FIG. 1D, a patterned first insulating layer 14 is formed on the exposed first circuit layer 13, and the insulating layer 14 has a portion of the first circuit layer 13 exposed outside the opening 1440. The first insulating layer 14 may be a photosensitive (P h 〇 t 〇- sensitive) insulating layer, for example, a material such as a photo developing resin (P hotoimageab 1 eresi η), and the photoresist is processed by a photolithography technology. The insulating insulating layer is subjected to processes such as exposure and development to selectively form the openings 140, so that the first circuit layer 13 exposes the openings 140. In addition, the insulating layer may also be a thermosetting resin for forming an opening 1 40 by laser-via, but the opening 1 40 is preferably a photosensitive insulating layer through a micro- Shadow technology. As shown in FIG. 1E, an electroplating process is performed to pass the conductive base layer 10 as a current conduction path, and a conductive metal layer 1 41 is formed in the opening 1 4 0 of the first insulating layer 14 and the The conductive metal layer 1 4 1 is electrically connected to the first circuit layer 13. Next, a seed layer 15 is formed on the outer surface of the first insulating layer 14 and the conductive metal layer 141, and the seed layer 15 is electrically connected to the conductive metal layer 141. Through the conductive base layer, The first circuit layer, the conductive metal layer, and the seed layer serve as a current conduction path required for electroplating to form a subsequent patterned build-up structure. The seed layer 15 can be formed by physical vapor deposition (PVD), chemical vapor deposition (CVD), electroless plating, or chemical deposition, such as sputtering, evaporation, and arc vapor deposition. (Arc

17446 全懋.ptd 第15頁 592007 五、發明說明(ίο) vapor deposition)、離子束濺鍍(Ion beam sputtering)、雷射熔散沈積(Laser ablation deposition)、電漿促進之化學氣相沈積或無電鍍等方法 形成;此外,為避免後續電鍍完成電路層後,即需進行移 除部分該晶種層時所產生之電路層受側蝕而收縮變形,以 及金屬粒子遷移等問題,該晶種層之材質係可為相異於電 路層(金屬銅)材質之阻障金屬,例如鉻(Cr )、鎳(N i )、鈷 (C 〇 )、I巴(P d )、I旦(T a )、鈦(T i )所構成之群組之其中一 者。且該些阻障金屬於室溫下之電阻值分別為:鎳(1 3# Ω -cm)’ 鉻(6.84// Ω -cm),始(6·24// Ω -cm),把(10.8 // Ω -cm)’ 组(11.5/ζ Ω -cm),鈥(80// Ω -cm)(參酌 John, Wiley&Sons,Inc 2 0 0 0年出版之 Modern Electroplating) ,另銅之電阻值為1.67 3/ζ Ω -cm,因此該些阻障金屬均屬 電之良導體。 此外’發明人於先期研究中在一有機材質上濺鍍1 # 鉻層作為導電層,再以硫酸銅為電鍍液,可電鍍形成20// 銅層。以此實驗基礎,可推知低電阻值之鉻(C r )、鎳 (Ni )、鈷(Co)、鈀(Pd)、钽(Ta)、鈦(Ti )作為導電層亦可 順利於其上電鍍形成銅材質之電路層。 如第1 F圖所示,於晶種層1 5表面形成一圖案化之第二 阻層1 6,如乾膜或液態光阻等,且該第二阻層1 6具有開口 1 6 0以外露出部分晶種層。 如第1G圖所示,進行電鑛製程(Electroplating)以透 過該導電基層10、第一電路層13、導電金屬層141與晶種17446 Quan 懋 .ptd Page 15 592007 V. Description of the invention (ίο) vapor deposition, ion beam sputtering, laser ablation deposition, plasma-assisted chemical vapor deposition or It is formed by methods such as electroless plating; in addition, in order to avoid problems such as contraction and deformation of the circuit layer due to side erosion and metal particle migration when the circuit layer is removed after subsequent electroplating, the seed crystal The material of the layer may be a barrier metal different from the material of the circuit layer (metal copper), such as chromium (Cr), nickel (Ni), cobalt (Co), Ibar (Pd), Iden (T a) One of the groups consisting of titanium (T i). And the resistance values of these barrier metals at room temperature are: nickel (1 3 # Ω -cm) 'chromium (6.84 // Ω -cm), starting (6 · 24 // Ω -cm), and ( 10.8 // Ω -cm) 'group (11.5 / ζ Ω -cm), “(80 // Ω -cm) (refer to Modern Electroplating published by John, Wiley & Sons, Inc 2000), and another copper The resistance value is 1.67 3 / ζ Ω -cm, so these barrier metals are all good conductors of electricity. In addition, the inventor has sputter-plated a # 1 chromium layer on a organic material as a conductive layer in a previous study, and then used copper sulfate as a plating solution to form a 20 // copper layer by electroplating. Based on this experimental basis, it can be inferred that chromium (C r), nickel (Ni), cobalt (Co), palladium (Pd), tantalum (Ta), and titanium (Ti) as conductive layers can also be successfully deposited on it with low resistance values. Electroplating to form a circuit layer made of copper. As shown in FIG. 1F, a patterned second resist layer 16 such as a dry film or a liquid photoresist is formed on the surface of the seed layer 15 and the second resist layer 16 has an opening other than 160 A part of the seed layer is exposed. As shown in FIG. 1G, an electric mining process is performed to pass through the conductive base layer 10, the first circuit layer 13, the conductive metal layer 141, and the seed crystal.

17446 全懋.ptd 第16頁 592007 五、發明說明(11) 層1 5作為電流傳導路徑,俾於該第二阻層1 6之開口 1 6 0内 之晶種層上形成第二電路層17,並藉由該導電金屬層141 以使該第二電路層1 7得以電性連接至該第一電路層1 3。 如第1 Η圖所示,移除該第二阻層1 6及其所覆蓋之部份 晶種層1 5,俾顯露出該第二電路層1 7。而由於在移除部分 該晶種層1 5時,因其材質係與所形成之電路層不同,所以 在以蝕刻等方式去除時並不會破壞該電路層尺寸,避免導 致線路收縮變形甚而影響其電性導通等問題。 如第1 I圖所示,於顯露的第二電路層1 7表面持續透過 該導電基層、導電金屬層與電路層等所構成之電流傳導路 徑,利用電鍍方式於該第二電路層之表面上形成抑制金屬 粒子遷移(Migration)的金屬阻障層18,以藉由金屬阻障 層1 8將第二電路層1 7包覆隔絕。該金屬阻障層1 8之材質係 例如為鉻(Cr)、鎳(Ni)、始(Co)、把(Pd)、钽(Ta)、鈦 (T i )所構成之群組之其中一者。 由於本發明係利用該導電基層1 0作為電鍍金屬層所需 之電流傳導路徑以先製作第一電路層1 3,接著再形成用以 分層的絕緣層14,以及第二電路層17,且在第二電路層17 包覆金屬阻障層1 8,如此即可藉由金屬阻障層1 8甚或具導 電阻障特性之晶種層1 5分別包覆阻隔以銅為主的第二電路 層1 7,以避免銅粒子遷移的現象,如此即可使電路層之佈 線方式更緊密,而不至於產生短路或干擾的情況。 如第1 J圖所示,復可持續依前述步驟進行電路增層, 以於該電路增層結構表面之電路層上得再形成第二絕緣層17446 Quan 懋 .ptd Page 16 592007 V. Description of the invention (11) Layer 15 is used as a current conduction path, and a second circuit layer 17 is formed on the seed layer within the opening 16 of the second resistive layer 16 The second circuit layer 17 is electrically connected to the first circuit layer 13 by the conductive metal layer 141. As shown in FIG. 1, the second resistive layer 16 and the seed layer 15 covered by the second resistive layer 16 are removed, and the second circuit layer 17 is exposed. And when removing part of the seed layer 15, because the material is different from the formed circuit layer, the size of the circuit layer will not be destroyed when it is removed by etching or the like, which will prevent the circuit from shrinking and even affecting the circuit layer. Its electrical continuity and other issues. As shown in FIG. 1I, the surface of the exposed second circuit layer 17 continues to pass through the current conduction path formed by the conductive base layer, the conductive metal layer, and the circuit layer, and the surface of the second circuit layer is electroplated. A metal barrier layer 18 is formed to suppress migration of metal particles, so that the second circuit layer 17 is isolated by the metal barrier layer 18. The material of the metal barrier layer 18 is, for example, one of the group consisting of chromium (Cr), nickel (Ni), origin (Co), handle (Pd), tantalum (Ta), and titanium (T i). By. Since the present invention uses the conductive base layer 10 as the current conduction path required for the electroplated metal layer to first fabricate the first circuit layer 13 and then to form the insulating layer 14 and the second circuit layer 17 for layering, and The second circuit layer 17 is covered with a metal barrier layer 18, so that the metal barrier layer 18 or even the seed layer 15 having conductive resistance characteristics can be used to cover and block the second circuit mainly composed of copper, respectively. Layer 17 to avoid the phenomenon of copper particle migration, so that the wiring of the circuit layer can be made tighter without causing short circuits or interference. As shown in Figure 1J, the circuit can be further increased in accordance with the foregoing steps to form a second insulating layer on the circuit layer on the surface of the circuit increased structure.

17446 全懋.ptd 第17頁 592007 五、發明說明(12) 1 4 ’,再依上述之步驟製作於該第二絕緣層1 4,之開口中電 鍍形成有導電金屬層141’,同時藉由先前該些導電金屬層 與電路層以形成有堆疊通孔(Stacked via)l 9於該電路板 中。此外,後續亦 路徑持續在該電路 金屬保護層以保護 導電元件,例如金 板之良好電性導接 直接電鍍形成有預 S示)。 可藉由該導電基層 板之表面電路上電 該電路板之表面電 線、凸塊、預銲錫 功能,甚或可在該 鮮錫材料以供電性 10所構成之電流傳導 鏡形成有如鎳/金之 路,並可提供與其餘 或銲球與晶片或電路 電路板之表面電路上 連接至外部裝置(未 如第1 κ圖所示,該 後,得移除其最底層的 層13,即完成一多層電 多層電路板之增層結構製作 導電基層1 0,俾外露出該 路板。 完成 一電路17446 Quan 懋 .ptd Page 17 592007 V. Description of the invention (12) 1 4 ', and then made on the second insulating layer 1 4 according to the above steps, a conductive metal layer 141' is electroplated in the opening, and at the same time by Previously, the conductive metal layers and circuit layers were formed with stacked vias 19 in the circuit board. In addition, subsequent paths also continue in the circuit's metal protective layer to protect conductive components, such as a good electrical connection of a gold plate. Direct electroplating is formed (predicted by S). The surface circuit of the conductive base board can be used to power on the surface wires, bumps, and pre-soldering functions of the circuit board, or even a current-conducting mirror composed of power supply 10 in the fresh tin material can be formed as a nickel / gold road And can provide connection to external devices with the rest or solder balls and the surface circuit of the chip or circuit board (not shown in Figure 1 κ, after which, the bottom layer 13 must be removed to complete more than one The layered structure of the multilayer electric circuit board is used to make a conductive base layer 10, and the circuit board is exposed outside.

本發明中之具導電性阻障結構之電路板係 層1 0作為電流傳導路徑以直接在其上電 士、用V電基In the present invention, the circuit board with a conductive barrier structure layer 10 is used as a current conduction path to directly apply electricity thereto, and a V-based substrate is used.

13, 17,並在電路層表面電鍍形成有一金又/成t有電路層 有效抑制相鄰電路間銅粒子遷移的現象,且障層1 8,俾 緣部份之設置將可更輕薄,故得以製作更=,電路板中絕 稱電路板。又該金屬阻障層1 8除了得以用=涛的多層非對 遷移的現象外,當阻障層為鉻時,亦a m來抑制金屬粒子 與絕緣層1 4之附著力,使該電路層1 γ得緊卢9強電路層1 7 1 4上,避免產生脫離的情況,提供較^的社'結合在絕緣層 該第一電路層1 3與第二電路声、吏用政果。 成開口 1 4 0,再於該開口 1 4 0内形成導雷a 、、彖層1 4先形 电金屬層141,俾可13, 17, and a gold layer is formed on the surface of the circuit layer by electroplating. There is a circuit layer to effectively suppress the migration of copper particles between adjacent circuits, and the barrier layer 18 and the marginal portion can be thinner and thinner, so To make more =, the circuit board is absolutely called the circuit board. In addition to the metal barrier layer 18, in addition to the phenomenon of multi-layer anti-migration, when the barrier layer is chromium, it also suppresses the adhesion between the metal particles and the insulating layer 14 to make the circuit layer 1 γ is tightly connected to the 9 strong circuit layers 1 7 1 4 to avoid the occurrence of detachment, and provides a more social organization to combine the first circuit layer 13 and the second circuit with the sound and government effects. An opening 1 4 0 is formed, and then a lightning conducting layer a and a plutonium layer 14 are formed in the opening 1 4 0 to form an electric metal layer 141.

592007 五、發明說明(13) 藉由導電金屬層141連接第一電路層13與第二電路層17, 如此即可藉由堆疊的方式進行增層製作電路,而無習知結 構必須先製作導電性的通孔,再填補材料的麻煩與不便, 故得簡化製程以降低製造成本。 另外,由於本發明在導電基層1 0上利用其作用電流傳 導路徑而依序堆疊製作第一電路層1 3及第二電路層1 7等, 並可依上述製造方法持續堆疊製作另一絕緣層及電路層, 以成為一非對稱性之電路板結構。 綜上所述,以上僅為本發明之較佳實施例而已,並非 用以限定本發明之實質技術内容範圍,本發明之實質技術 内容係廣義地定義於下述之申請專利範圍中,任何他人完 成之技術實體或方法,若是與下述之申請專利範圍所定義 者係完全相同,亦或為同一等效變更,均將被視為涵蓋於 此申請專利範圍中。592007 V. Description of the invention (13) The first circuit layer 13 and the second circuit layer 17 are connected by the conductive metal layer 141, so that the circuit can be added by stacking, and the conductive structure must be made first. Sexual through holes, and then fill the trouble and inconvenience of the material, so the process must be simplified to reduce manufacturing costs. In addition, in the present invention, the first circuit layer 13 and the second circuit layer 17 are sequentially stacked and fabricated on the conductive base layer 10 by using its active current conduction path, and another insulating layer can be continuously stacked and fabricated according to the above manufacturing method. And circuit layer to become an asymmetric circuit board structure. In summary, the above are only the preferred embodiments of the present invention, and are not intended to limit the scope of the essential technical content of the present invention. The essential technical content of the present invention is broadly defined in the scope of patent applications described below. The completed technical entity or method, if it is completely the same as defined in the patent application scope described below, or the same equivalent change, will be considered to be covered by this patent application scope.

17446 全懋.ptd 第19頁 592007 圖式簡單說明 【圖式簡單說明】 第1 A圖至1 K圖係本發明之具導電性阻障結構之電路板 製法剖視示意圖; 第2A圖係習知技術之電鍍導通孔結構示意圖; 第2 B圖係習知技術之電鍍層沉積後,於凹陷處填有填 充材之盲孔結構示意圖; 第2C圖係習知技術完全填有導電材之盲孔結構示意 圖;以及 第3 A圖至第3 E圖係習知技術中用以製作較細電路之半 加成法製程示意圖。 10 導電基層 11 第一阻層17446 懋 .ptd Page 19 592007 Schematic illustrations [Schematic illustrations] Figures 1A to 1K are schematic cross-sectional views of the method of manufacturing a circuit board with a conductive barrier structure according to the present invention; Figure 2A is an exercise Schematic diagram of the plating vias of the known technology; Figure 2B is a schematic diagram of the blind hole structure filled with a filling material after the plating layer of the conventional technology is deposited; Figure 2C is the blind of the conventional technology completely filled with the conductive material Schematic diagram of the hole structure; and FIGS. 3A to 3E are schematic diagrams of a semi-additive process for making thinner circuits in the conventional art. 10 conductive base layer 11 first resistive layer

17446 全懋.ptd 第20頁 59200717446 懋 .ptd page 20 592007

圖式簡單說明 201 絕緣層 202, 203 電路層 204 電鍍金屬 205 填充材 206 絕緣層 207 電路層 208 電鍍層 209 填充材 210 絕緣層 211,212 電路層 213 導電材 300 四層電路板 301 核心電路板 302 電路層 303 絕緣層 304 電鍍導通孔 305 有機絕緣層 306 盲孑L 307 無電鍍銅薄層 308 阻層 309 電路層 310 阻層開口 311 增層結構 ]7446 全懋.ptd 第21頁Schematic description 201 Insulation layer 202, 203 Circuit layer 204 Plating metal 205 Filling material 206 Insulation layer 207 Circuit layer 208 Plating layer 209 Filling material 210 Insulation layer 211,212 Circuit layer 213 Conductive material 300 Four-layer circuit board 301 Core circuit board 302 Circuit Layer 303 Insulating layer 304 Plating via 305 Organic insulating layer 306 Blind L 307 Electroless copper thin layer 308 Resistive layer 309 Circuit layer 310 Resistive layer opening 311 Additive structure] 7446 Full 懋 .ptd page 21

Claims (1)

592007 六、申請專利範圍 1. 一種具導電性阻障結構之增層電路板製法,係包括: 提供一導電基層(Conductive base); 於該導電基層上形成圖案化之第一阻層,俾使該 第一阻層形成有開口以外露出該導電基層; 進行電鍍製程以於該第一阻層之開口中形成第一 電路層; 移除該第一阻層,並進行增層製程以於顯露之第 一電路層上形成至少一圖案化絕緣層,且該絕緣層具 有開口以外露出該第一電路層; 進行電鍍製程以於絕緣層開口内形成導電金屬 層; 於該絕緣層及導電金屬層外表面形成一晶種層 (Seed layer); 於晶種層表面形成一圖案化之第二阻層,該第二 阻層具有開口以外露出該晶種層; 於該第二阻層之開口内形成第二電路層,俾藉由 導電金屬層以電性連接至該第一電路層; 移除該第二阻層及其所覆蓋之晶種層;以及 進行電鍍製程以於該第二電路層表面形成金屬阻 障層。 2. 如申請專利範圍第1項之具導電性阻障結構之增層電路 板製法,復包括於該已形成金屬阻障層之第二電路層 上再形成絕緣層,並依前述增層製程形成至少一具金 屬阻障層之第二電路層及導電金屬層,俾以形成多層592007 VI. Application Patent Scope 1. A method for manufacturing a layered circuit board with a conductive barrier structure, comprising: providing a conductive base layer; and forming a patterned first resistive layer on the conductive base layer, so that The first resistive layer is formed with an opening to expose the conductive base layer; a plating process is performed to form a first circuit layer in the opening of the first resistive layer; the first resistive layer is removed, and a build-up process is performed to expose the Forming at least one patterned insulating layer on the first circuit layer, and the insulating layer having the first circuit layer exposed outside the opening; performing a plating process to form a conductive metal layer in the opening of the insulating layer; outside the insulating layer and the conductive metal layer A seed layer is formed on the surface; a patterned second resist layer is formed on the surface of the seed layer; the second resist layer has an opening to expose the seed layer; and is formed in the opening of the second resist layer A second circuit layer, electrically connected to the first circuit layer through a conductive metal layer; removing the second resistive layer and the seed layer covered by the second circuit layer; and performing an electroplating process on the second circuit layer Road barrier layer forming the surface of the metal barrier layer. 2. For the method of manufacturing a layered circuit board with a conductive barrier structure according to item 1 of the scope of patent application, the method further includes forming an insulating layer on the second circuit layer on which the metal barrier layer has been formed, and following the layering process described above. Forming at least one second circuit layer with a metal barrier layer and a conductive metal layer to form a multilayer 17446 全懋.ptd 第22頁 592007 六、申請專利範圍 非對稱電路板。 3 .如申請專利範圍第1項之具導電性阻障結構之增層電路 板製法,復包括於該電路板之表面電路層上電鍍形成 有鎳/金金屬層。 4. 如申請專利範圍第1項之具導電性阻障結構之增層電路 板製法,復包括於該電路板之表面電路層上電鍍形成 有預鲜錫材料。 5. 如申請專利範圍第2、3或4項之具導電性阻障結構之增 層電路板製法,復包括於製作完成該增層電路板後, 移除該作用為電流傳導路徑之導電基層。 6. 如申請專利範圍第1項之具導電性阻障結構之增層電路 板製法,其中,該晶種層係為導電性阻障金屬。 7. 如申請專利範圍第1項之具導電性阻障結構之增層電路 板製法,其中,該金屬阻障層及晶種層係為鉻(Cr)、 鎳(Ni)、鈷(Co)、鈀(Pd)、鈕(Ta)、鈦(Ti)所構成之 群組之其中一者。 8. 如申請專利範圍第1項之具導電性阻障結構之增層電路 板製法,其中,該第一電路層係包括電鍍有金、鎳、 及銅金屬。 9. 如申請專利範圍第1項之具導電性阻障結構之增層電路 板製法,其中,該絕緣層為一感光性 (P h 〇 t 〇 - s e n s i t i v e )絕緣層。 1 〇 .如申請專利範圍第9項之具導電性阻障結構之增層電路 板製法,其中,該感光性絕緣層可藉由曝光、顯影製17446 懋 .ptd Page 22 592007 6. Scope of Patent Application Asymmetric circuit board. 3. The method for manufacturing a layered circuit board with a conductive barrier structure according to item 1 of the scope of the patent application, which further comprises forming a nickel / gold metal layer on the surface circuit layer of the circuit board by electroplating. 4. For the method of manufacturing a layered circuit board with a conductive barrier structure according to item 1 of the scope of the patent application, the method includes pre-fresh tin material formed on the surface of the circuit board by electroplating. 5. For the method of manufacturing a layered circuit board with a conductive barrier structure in the scope of patent application No. 2, 3 or 4, the method further includes removing the conductive base layer serving as a current conduction path after the layered circuit board is completed. . 6. For the method of manufacturing a layered circuit board with a conductive barrier structure according to item 1 of the patent application scope, wherein the seed layer is a conductive barrier metal. 7. For the method for manufacturing a layered circuit board with a conductive barrier structure according to item 1 of the patent application scope, wherein the metal barrier layer and the seed layer are chromium (Cr), nickel (Ni), and cobalt (Co) One of the groups consisting of palladium (Pd), button (Ta), and titanium (Ti). 8. For the method of manufacturing a layered circuit board with a conductive barrier structure according to item 1 of the patent application scope, wherein the first circuit layer comprises electroplated gold, nickel, and copper metal. 9. For example, a method for manufacturing a layered circuit board with a conductive barrier structure according to item 1 of the scope of the patent application, wherein the insulating layer is a photosensitive (P h 〇 t 〇-s en n s i t i v e) insulating layer. 10. The method of manufacturing a layered circuit board with a conductive barrier structure according to item 9 of the scope of patent application, wherein the photosensitive insulating layer can be manufactured by exposure and development. 17446 全懋.ptd 第23頁 592007 六、申請專利範圍 程以選擇性形成有開口。 1 1.如申請專利範圍第9項之具導電性阻障結構之增層電路 板製法,其中,該感光性絕緣層可為光顯像樹脂 (Photo i mageab 1 e resin)0 1 2 . —種具導電性阻障結構之增層電路板,係包括: 一第一電路層,係透過一導電基層(Conductive base)以電鑛方式形成; 至少一絕緣層,係覆蓋在該第一電路層上,且該 絕緣層中具有藉由該導電基層以電鐘方式形成之導電 金屬層以電性連接至第一電路層; 至少一晶種層(Seed layer ),係圖案化形成在該 絕緣層表面,並使該晶種層電性連接至導電金屬層; 至少一第二電路層,係藉由該導電基層以形成在 該晶種層上,並藉由該導電金屬層電性連接至該第一 電路層;以及 至少一金屬阻障層,係藉由該導電基層電鍍包覆 在該第二電路層表面。 1 3.如申請專利範圍第1 2項之具導電性阻障結構之增層電 路板,其中,該金屬阻障層及晶種層係為鉻(C r )、錄 (Ni)、姑(Co)、把(Pd)、la (Ta)、鈦(Ti )所構成之群 組之其中一者。 1 4 .如申請專利範圍第1 2項之具導電性阻障結構之增層電 路板,其中,該第一電路層係包括電鍍有金、鎳、及 銅金屬。17446 懋 .ptd Page 23 592007 6. Scope of patent application to selectively form openings. 1 1. The method for manufacturing a layered circuit board with a conductive barrier structure according to item 9 of the scope of patent application, wherein the photosensitive insulating layer may be a photoimaging resin (Photo i mageab 1 e resin) 0 1 2. — A layered circuit board with a conductive barrier structure includes: a first circuit layer, which is formed by a conductive base through a conductive base; at least one insulating layer covering the first circuit layer And the insulating layer has a conductive metal layer formed by the conductive base layer in an electrical clock manner to be electrically connected to the first circuit layer; at least one seed layer is patterned and formed on the insulating layer Surface, and the seed layer is electrically connected to the conductive metal layer; at least one second circuit layer is formed on the seed layer by the conductive base layer, and is electrically connected to the conductive metal layer by the conductive metal layer The first circuit layer; and at least one metal barrier layer are coated on the surface of the second circuit layer by electroplating the conductive base layer. 1 3. The layered circuit board with a conductive barrier structure according to item 12 of the patent application scope, wherein the metal barrier layer and the seed layer are chromium (C r), copper (Ni), or ( Co), one of the groups consisting of (Pd), la (Ta), and titanium (Ti). 14. The layer-added circuit board having a conductive barrier structure according to item 12 of the scope of patent application, wherein the first circuit layer comprises metal plated with gold, nickel, and copper. 17446 全懋.ptd 第24頁 592007 六、申請專利範圍 1 5 .如申請專利範圍第1 2項之具導電性阻障結構之增層電 路板,其中,該絕緣層為一感光性(Photo-sensitive) 絕緣層。 1 6 .如申請專利範圍第1 5項之具導電性阻障結構之增層電 路板,其中,該感光性絕緣層可藉由曝光、顯影製程 以選擇性形成有開口。 1 7 .如申請專利範圍第1 5項之具導電性阻障結構之增層電 路板,其中,該感光性絕緣層可為光顯像樹脂 (Photoimageable resin)017446 懋 .ptd Page 24 592007 VI. Application for patent scope 1 5. For example, the application of the patent scope 12 for a layered circuit board with a conductive barrier structure, wherein the insulating layer is a photosensitive (Photo- sensitive) Insulation. 16. The layer-added circuit board with a conductive barrier structure according to item 15 of the scope of patent application, wherein the photosensitive insulating layer can be selectively formed with openings through exposure and development processes. 17. The layered circuit board with a conductive barrier structure according to item 15 of the scope of patent application, wherein the photosensitive insulating layer may be a photoimageable resin. 17446 全懋.ptd 第25頁17446 懋 .ptd Page 25
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022552B2 (en) 2006-06-27 2011-09-20 Megica Corporation Integrated circuit and method for fabricating the same
US8193636B2 (en) 2007-03-13 2012-06-05 Megica Corporation Chip assembly with interconnection by metal bump
TWI630854B (en) * 2016-05-06 2018-07-21 鵬鼎科技股份有限公司 Method for making circuit board

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8022552B2 (en) 2006-06-27 2011-09-20 Megica Corporation Integrated circuit and method for fabricating the same
US8471388B2 (en) 2006-06-27 2013-06-25 Megica Corporation Integrated circuit and method for fabricating the same
US8193636B2 (en) 2007-03-13 2012-06-05 Megica Corporation Chip assembly with interconnection by metal bump
TWI630854B (en) * 2016-05-06 2018-07-21 鵬鼎科技股份有限公司 Method for making circuit board

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