TW200406774A - Semiconductor memory - Google Patents

Semiconductor memory Download PDF

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Publication number
TW200406774A
TW200406774A TW092121237A TW92121237A TW200406774A TW 200406774 A TW200406774 A TW 200406774A TW 092121237 A TW092121237 A TW 092121237A TW 92121237 A TW92121237 A TW 92121237A TW 200406774 A TW200406774 A TW 200406774A
Authority
TW
Taiwan
Prior art keywords
source
line
drain
region
storage layer
Prior art date
Application number
TW092121237A
Other languages
English (en)
Chinese (zh)
Inventor
Elard Stein Von Kamienski
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of TW200406774A publication Critical patent/TW200406774A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW092121237A 2002-08-28 2003-08-01 Semiconductor memory TW200406774A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10239490A DE10239490B3 (de) 2002-08-28 2002-08-28 Halbleiterspeicher

Publications (1)

Publication Number Publication Date
TW200406774A true TW200406774A (en) 2004-05-01

Family

ID=31968998

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092121237A TW200406774A (en) 2002-08-28 2003-08-01 Semiconductor memory

Country Status (3)

Country Link
DE (1) DE10239490B3 (de)
TW (1) TW200406774A (de)
WO (1) WO2004021442A1 (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3731163A (en) * 1972-03-22 1973-05-01 United Aircraft Corp Low voltage charge storage memory element
JPH05110114A (ja) * 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子
FR2726935B1 (fr) * 1994-11-10 1996-12-13 Commissariat Energie Atomique Dispositif a memoire non-volatile electriquement effacable et procede de realisation d'un tel dispositif
JP2001044391A (ja) * 1999-07-29 2001-02-16 Fujitsu Ltd 半導体記憶装置とその製造方法
JP2002100689A (ja) * 2000-09-22 2002-04-05 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
WO2004021442A1 (de) 2004-03-11
DE10239490B3 (de) 2004-04-29

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