200403351 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板處理裝置及處理方法，其將裝載 有基板的載具以連續搬送至處理室並進行預定的處理，特 別是關於可解決因載具移動在處理室和大氣之間所致之處 理室環境受到污染之問題，進而使得品質良好的薄膜形成 及蝕刻等處理得以穩定進行。 【先前技術】 作為基板處理裝置之習知例，針對圖7所示之製造用蒸 鍍裝置加以說明。如圖7所示，習知之蒸鍍裝置中，用於 搬入載具的加載互鎖真空室1 0、加熱室7 0、蒸鍍室3 0、 用於搬出載具的加載互鎖真空室1 0 ’等，均被藉由門閥 41〜43予以連結，並在每一腔室内設置有載具2的搬送單 元4。作為搬送單元4，適當的架構為：通常，多數個搬送 滾柱設有二排，並利用驅動系統來轉動滾柱，以使載置於 並排滾柱上的載具得以移動。基板3在大氣中裝載於載具 2上，並將載具2從加載互鎖真空室10搬送至加熱室70, 對於基板加熱至預定溫度後，再傳送至蒸鍍室3 0以形成薄 膜。其後，載具2被送出至加載互鎖真空室10’處，再被 取出至大氣中。處理完成的基板3’被回收後，載具2上再 次載有未處理基板3，並返回至加載互鎖真空室10内。藉 由重複進行該等操作，能使薄膜連續形成於多數片基板上。 在該先前技術的方法中，用於搬送基板之載具2在大氣 中及真空中之間反覆搬送。於是，附著於載具上的薄膜會 5 312/發明說明書(補件)/92-08/92113 979 200403351 吸附如大氣中的水分等雜質，更且，若另一薄膜附著在其 上，將導致密合性降低而使薄膜易於剝落。因薄膜剝落所 產生的粒子被膜内吸收以致薄膜缺陷，而成為產率降低之 原因。 此外，若圖7的蒸鍍裝置適用於電漿顯示器（P D P )的M g 0 膜形成，發現顯示性能上會出現很大問題。若重複對基板 進行膜形成，如圖8所示，蒸鑛室内之水分壓上升，隨之 MgO膜質會產生變化。換言之，若重複進行250次左右的 薄膜形成，蒸鍍室水分壓成為3 X 1 (Γ4 P a左右，而得到的 M g 0膜，如圖9的X光繞射圖譜所示，（1 1 1 )面上混在有（2 0 0 ) 面及（2 2 0 )之形態的薄膜。M g 0膜的次級電子發射係數會因 依據之結晶面而有所不同，因此結晶面若有混在則產生輝 度不均勻，使得大幅降低PDP顯示性能。從而，為了確保 高性能顯示性能，故必須將蒸鍍室的水分壓維持在3 X 1 0 _ 4 P a 以下。 為解決上述附著薄膜之剝落問題及蒸鍍室進入水分等問 題，曰本專利特開平9 - 2 7 9 3 4 1號公報揭示一蒸鍍裝置。該 蒸鍍裝置，其構造如圖1 0所示，用於搬入基板的加載互鎖 真空室1 0、蒸鍍室3 0以及用於搬出基板的加載互鎖真空 室1 0 ’等，均被藉由門閥4 1、4 2予以連結，而蒸鍍室3 0 包含用來將從加載互鎖真空室10中搬送過來的基板3裝載 於載具2 (托盤）上之基板裝載部3 1、蒸鍍部3 2以及將處理 完成後的基板送出至加載互鎖真空室1 0 ’内之基板回收部 3 3，而載具2就循環在裝載部、蒸鍍部及回收部之間，可 6 312/發明說明書(補件)/92-08/92 Π 3979 200403351 避免其曝露於大氣中。亦即，基板3搬入至加載互鎖真空 室1 0内後，利用由上述搬送並排滾柱所構成的搬送單元 4，使其裝載於基板裝載部3 1的載具2 (托盤）上，並搬送 至蒸鍍部3 2，再通過加熱機構（未圖示）加熱至預定溫度以 形成M g 0膜。其後，載具2被搬送至基板回收部3 3處，再 從載具2中取下經處理的基板3 ’僅將基板取出於加載互鎖 真空室1 0 ’内。另一方面，載具2沿著上部搬送路徑返回 至基板裝載部3 1處。如此之載具一直在真空中搬送，故可 避免使附著薄膜接觸大氣而可大幅控制粒子產生，並且可 控制水分等進入之結果，使得基板整面上形成具有相同結 晶面且均勻的M g 0膜，能使其對應高性能P D P。 【發明内容】 (發明所欲解決之問題） 然而，卻發現，在圖1 0所示的蒸鍍裝置中，對應基板 的大型化等實際上有相當大的困難。亦即，由於在僅搬送 單一基板的搬送方法中，基板兩端載置於搬送滾柱上予以 搬送，導致大型基板上產生較大的彎曲。結果，導致搬送 不穩定，甚至基板會斷裂，產生難於製造高精密、高性能 P D P之問題。在為了縮短產距時間，使基板以橫向搬送時， 更突顯出該問題。更且，根據基板的尺寸需進行如搬送滾 柱排之間的間距等各種設定，以致實質無法對應多種尺寸 之基板，具有通用性低之缺點。 如此，為了對應基板的大型化及多樣化，得知必須裝置 作成在搬入基板時已將基板裝載於預定尺寸的載具上之架 312/發明說明書(補件)/92-08/92113979 200403351 構，並利用該裝置構造對於薄膜剝落及維持薄膜品質進行 研究。在研究中發現：已開發一種蒸鍍裝置，該裝置的構 造，係在薄膜形成時用遮罩件來覆蓋載具以抑制薄膜附著 於載具上，且遮罩件不取出而使其留在真空室内（日本專利 特開平1 1 - 1 3 1 2 3 2號公報），該裝置與圖7所示的裝置構造 相較，雖然有所改進，但是仍不足以對應高精密、高性能 的大型PDP。例如，遮罩件開口大於載具開口部時，就會 使薄膜附著於載具上，產生如同上述問題，而如果遮罩件 開口部較小，就會使蒸鍍材料流到基板外周部處而堆積， 成為薄膜厚度較薄且結晶面混在的形態，產生輝度不均勻 之問題。 上述問題，不僅在MgO蒸鍍裝置中，同樣也在用於各種 薄膜形成中的濺鍍或CVD等成膜裝置或蝕刻裝置等處理裝 置中發生，至於在真空基板處理領域中，正期待有一種對 薄膜品質及處理性能沒有造成影響，並可實現連續且穩定 的處理之基板搬送方法。 在這種情況下，本發明之目的在於提供一種基板處理裝 置及處理方法，其可抑制利用載具的處理室環境之污染， 且可實現穩定的基板搬送及連續執行高品質的基板處理， 並且可對應今後連續大型化之基板，且可對應各種基板尺 寸而具有很高的通用性。 (解決問題之手段） 本發明之基板處理裝置，其具有：加載互鎖真空室，搬 入裝載有基板的載具；基板移載室，具有用來在與載具之 312/發明說明書(補件)/92-08/92113979 200403351 間進行移載的移載機構；基板處理室，對於基板進行預定 處理，其特徵在於：具備可移動在上述加載互鎖真空室及 上述基板移載室之間的第一載具，以及可移動在上述基板 移載室及上述基板處理室之間的第二載具，並利用上述移 載機構，可使基板在上述第一及第二載具之間移載。另一 特徵為：將裝載有經處理的基板之上述第一載具，搬出至 上述加載互鎖真空室内。 藉此，例如，能使在成膜時保持基板的載具得以不曝露 於大氣中，因此大氣中吸附或吸入於載具附著膜上而被帶 入蒸鍍室内的水分等所引起的薄膜品質不均勻或薄膜剝落 得以大幅降低，可將無缺陷且均勻的高品質薄膜連續製作 於多數片基板上。 本發明中，上述移載機構，係由具有多數載具保持台且 能互相更換的載具保持機構和基板保持機構各二件，以及 可使載具移動在該二件載具保持機構的保持台之間的移動 機構所構成者。 藉此，利用上述保持機構從上述保持台上的上述第一及 第二載具維持保持基板之狀態，且將載具在上述二件保持 機構之間移動，在維持這狀態下將基板再載置於載具上， 以基板得以移載。該架構，即使大型基板，仍可準確地執 行速率較快的移載，實現生產性較高的基板處理裝置。並 且，與利用機械人等所作的移載方法相較，其可大幅減少 裝置面積，可達成整體基板處理裝置的成本大幅削減。 此外，作為上述基板保持機構而言，較佳採用真空吸附 312/發明說明書(補件)/92-08/92113979 200403351 或靜電吸附機構。該保持機構，由於能由背面保持基板 故不僅在大型基板，也可對多種尺寸的基板免除基板表 的薄膜沉積面受到污染或刮傷，準確地予以保持，使得 大氣側載具和真空側載具之間容易且準確地進行基板移 載。 更且，上述基板移載室的特徵在於維持在乾燥氣體環 境，例如採用N 2氣體。藉此，基板移載機構及處理裝置 機構得以簡化。 另外，上述載具以支撐基板四邊為佳，如此一來，雖 基板大型化，也可控制基板彎曲且形成整面均勻的薄膜 更且，本發明，特別適用於如MgO膜等吸溼性較高的薄 形成中。 本發明之基板處理方法，係對於用來裝載有基板的載 進行搬出或搬入的加載互鎖真空室、可在載具之間進行 板移載的基板移載室、對於基板進行預定處理的基板處 室，使其等連結配置，並配置有可移動在上述加載互鎖 空室和上述基板移載室之間的第一載具及可移動在上述 板移載室和基板處理室之間的第二載具中，其特徵在於 在上述基板移載室中，在上述第一載具和上述第二載具 間進行基板移載，可避免向上述基板處理室搬出或搬入 上述第二載具曝露於大氣中而連續進行基板處理。 在此，如上所述，上述移載機構，較佳為：由將具有 段載具保持架且能垂直移動的載具保持機構和配置在其 的基板保持機構各二件，以及可使載具移動在該二件載 312/發明說明書(補件)/92-08/92113979 面 在 的 妙; 〇 膜 具 基 理 真 基 之 的 上 具 10 200403351 保持機構的保持架之間的移動機構所構成者，並且利用上 述保持機構從上述保持架上的上述第一及第二載具維持保 持基板之狀態，且將載具在上述二件保持機構之間移動， 在維持這狀態下將基板再載置於載具上，以進行基板的移 載。 【實施方式】 本發明之基板處理裝置的基本架構，顯示於圖1的模式 圖中。 如圖1所示，基板處理裝置，係具有透過門閥41、4 2 使加載互鎖真空室1 0、基板移載室2 0及處理室3 0予以連 結之構造，能使第一載具1移動在加載互鎖真空室1 0及基 板移載室2 0之間而使基板得以搬送，能使第二載具Γ移 動在基板移載室2 0及處理室3 0之間而使基板得以搬送。 在此，基板移載室2 0被保持在如N 2氣體等乾燥氣體環境 或真空狀態，且安裝有基板移載機構5。 在大氣中將基板3裝載於第一載具1上，再被搬入至加 載互鎖真空室10内，形成真空之後（指基板移載室若為N2 氣體環境時就填充N 2氣體之後），打開門閥4 1，使其移送 至基板移載室2 0内。在基板移載室2 0内，利用基板移載 機構5，將基板3從第一載具1移載至第二載具Γ上，再 使裝載有基板3的第二載具Γ被移送至處理室30,並進行 預定處理之後退回至基板移載室20内。在基板移載室中， 經處理的基板3’從第二載具1’移載至第一載具1上，而第 一載具1通過加載互鎖真空室10被取出於大氣中，並對於 11 312/發明說明書(補件)/92-08/92113979 200403351 經處理基板3 ’與未處理基板3予以交換，再被返回至加載 互鎖真空室10内。如此，其構成為：進入於處理室30内 的第二載具未接觸大氣，且基板3、3 ’均以載具搬送，因 此即使大型基板，仍可重複且連續執行穩定的搬送及處理。 下面，關於PDP的MgO膜蒸鍵裝置，基於圖式更進一步 說明本發明的較佳實施形態。圖2為實施關於本發明的MgO 膜形成方法的蒸鍍裝置之架構示意圖，圖3為用來說明在 基板移載室中所進行的基板移載方法的一例之示意圖。本 實施形態中，使加載互鎖真空室1 0、第一輔助室5 0、基板 移載室2 0、第二輔助室6 0、第一加熱室7 0、蒸鍍室3 0及 載具的搬送方向變換，且由用來進行基板加熱的第二加熱 室8 0所構成。每一腔室之間，配設有門閥4 1〜4 6。第一及 第二加熱室内，裝設有加熱機構（未圖示），用以對每一片 基板予以加熱，加熱至預定溫度為止。 本實施形態中，在加載互鎖真空室1 0、第一輔助室5 0、 第二輔助室6 0、第一加熱室7 0及蒸鍍室3 0内，分別配置 有將載具往圖右向搬送的上部搬送單元及往左向搬送的下 部搬送單元。每一搬送單元4，其適當採用構造為··例如 揭示於日本專利特開平9 - 2 7 9 3 4 1號公報上的二排搬送滾 柱所構成，並利用驅動系統轉動滾柱，使得裝載於滾柱上 的載具被搬送。另外，在第二加熱室80内，可垂直移動地 安裝有單一搬送單元，利用該單元，可使得载具從上部搬 送路徑移動至下部搬送路徑。該搬送單元的垂直部移動機 構，也適當採用日本專利特開平9 - 2 7 9 3 4 1號公報所示的裝 12 312/發明說明書(補件)/92-08/92113979 200403351 置，採用一種透過伸縮管且利用例如汽缸等使搬送單元垂 直移動之構造。 另外，在基板移載室20内，雙層堆疊有不同於載具保 持架的上述搬送單元4，且左右皆配置有二組能垂直移動 構造的載具保持機構2 1、2 2，並可使載具1、Γ移動在二 件載具保持機構的搬送單元之間。此外，作為垂直移動機 構，採用例如上述的日本專利特開平9 - 2 7 9 3 4 1號公報所示 的機構。更且，基板移載室2 0的頂部壁上，裝設有由對於 基板施予真空吸附的公知吸附機構所構成的基板保持機構 23 〇 在蒸鍍室3 0的底壁部處形成有開口 ，而在其下部處裝 設有蒸鍍機構3 5 (例如由中外爐工業（股）製造之電漿源） 及用來收容MgO的Mg0容納爐床34。此外，在開口部近旁 處配設有氧氣體導入機構，以進行調整薄膜品質。 玻璃基板（例如為用於4 2吋電視者），係裝載於水平姿 勢的載具上，且被搬送系統以水平予以搬送。下面，說明 該搬送方法。基板以其四邊處被保持，薄膜形成於基板單 面上（本實施形態中在於下側）。 ’ 第一載具1，係循環在大氣中、加載互鎖真空室1 0及基 板移載室2 0之間，第二載具1 ’，則循環在基板移載室2 0 及第二加熱室8 0之間。 首先，玻璃基板3裝載於第一載具1上，搬入至加載互 鎖真空室1 〇内。加載互鎖真空室1 〇進行排氣至預定氣壓 (約1 (Γ5 P a)為止。之後，打開門閥41，使第一載具1搬送 13 312/發明說明書(補件)/92-08/92113 979 200403351 至第一輔助室50内。搬入至第一輔助室50内的第一載具 1，利用加熱機構（未圖示）加熱至約1 5 0 °C以進行脫氣處 理。停止加熱，已到達約1 (Γ4 P a之後，導入乾燥N 2氣體至 大氣壓為止。 此時，在第二輔助室6 0的下部搬送單元上，等待有已 裝載有經處理基板3’的第二載具1’，室内已導入有N2氣 體。除此之外，基板移載室充滿著大氣壓的N2氣體。 參見圖3說明從該狀態到基板移載室2 0所進行的基板 移載動作。 自從圖3 (a)狀態，打開門閥4 2，可使第一載具1搬送 至基板移載室2 0的第一載具保持機構2 1上層架上。相對 於此，打開門閥4 3，可使裝載有完成成膜之基板3 ’的第二 載具1 ’從第二輔助室6 0搬送至第二載具保持機構2 2的下 層架上圖3(b)。 基板保持機構2 3，利用未圖示的汽缸且透過伸縮管從基 板移載室的頂部壁押下，接觸至各片基板而形成真空吸附 後，再被推高。此時，第一及第二載具保持機構2 1、2 2 移動至相同高度後，轉動搬送滾柱，使得第一及第二載具 分別移動至相反載具保持機構的單元上圖3 ( c )。接著，基 板保持機構2 3再度被押下，經處理基板3 ’裝載於第一載 具1上，而未處理基板3則裝載於第二載具Γ上圖3(d)。 其次，第一及第二載具分別移動至相反方向側的單元上圖 3(e)。繼之，第一及第二載具保持機構垂直移動，打開門 閥42、43，使得第一載具1移送至第一輔助室50的下部 14 312/發明說明書(補件)/92-08/92113979 200403351 搬送單元上，而第二載具Γ則移送至第二輔助室6 0的上 部搬送單元上圖3 ( f)。 其次，在第二輔助室6 0内，進行排氣至預定氣壓為約 1 (Γ5 P a之後，打開門閥4 4，使第二載具搬送至第一加熱室 7 0内。在第一加熱室7 0内，利用加熱機構（未圖示）加熱 至約3 0 0 °C為止。再進行脫氣，氣壓達到約1 0_3Pa為止。 之後，打開門閥4 5，可使第二載具經過蒸鍍室3 0後移送 至第二加熱室8 0，對其進行加熱預定時間。在第二加熱室 8 0内，裝載有載具的搬送單元4，利用例如日本專利特開 平9 - 9 7 9 3 4 1號公報所示的垂直移動機構被下降，使得再度 打開門閥4 6，第二載具往與搬入方向相反方向移動，搬入 至蒸鍍室3 0内。 關於基板加熱而言，不限於上述實施形態者，也可在加 載互鎖真空室10或第二輔助室内進行者。 在蒸鍍室30中，對於裝載於第二載具Γ上的基板3上 以預定形成條件來沉積MgO膜。亦即，在蒸鍍室内導入有 80sccm氧氣體，更且導入Ar氣體至氣壓O.lPa為止，再 啟動電漿蒸鍍源，使得對於基板上沉積M g 0膜。 之後，第二載具1’，經過第一加熱室70、第二輔助室 60移送至基板移載室20，如上述般，在第一及第二載具之 間進行基板移載。 裝載於第一載具1上的經處理基板3’，經過第一輔助室 5 0再搬送至加載互鎖真空室1 0内。經導入大氣後，第一 載具被取出於大氣中，回收經處理基板3 ’，而未處理基板 15 312/發明說明書(補件)/92-08/92113979 200403351 3再度裝載於第一載具1上。 如上述，可將MgO膜連續地沉積於基板上。之間，由於 第二載具1 ’不會與大氣接觸，故能穩定地形成不易薄膜剝 落且無缺陷的M g 0膜。加上，所得到的M g 0膜的X光繞射 圖而言，即使成膜重複進行3 0 0 0次，仍呈現如圖4所示的 主要具有（1 11 )結晶$者，可繼續製作無輝度不均勻的高性 能PDP。參考而言，B、A及C係表示測定在基板中心及離 於基板端緣3 c m處的繞射圖譜。 圖1的裝置架構，雖然僅單一加載互鎖真空室中進行載 具的搬入、搬出之架構，也可採用裝設二個加載互鎖真空 室，從一方搬入而從另一方搬出之架構。這種一例顯示於 圖5中。圖5裝置中，在處理室3 0兩側邊配置有基板移載 室20、20’及加載互鎖真空室10、10’並配置有二組第一載 具1及第二載具1’，該二組第一載具1，可移動在第一基 板移載室2 0和第一加載互鎖真空室1 0及大氣之間，以及 移動在第二基板移載室20和第二加載互鎖真空室10及大 氣之間，而該第二載具1’可移動在第一基板移載室20、處 理室3 0及第二基板移載室2 0 ’之間。 另外，本發明中，關於基板處理裝置的處理室、輔助室 的數量及配置等，以及同時循環在基板處理裝置内的載具 數量而言，可按照例如每一腔室内的產距時間而適當選定。 此外，本實施形態中，雖然採用真空吸附機構作為基板 移載室的基板保持機構，亦可採用如周知的靜電吸附機構 或揭示於曰本專利特開平9 - 2 7 9 3 4 1號公報的保持基板端 16 312/發明說明書(補件)/92-08/92113979 200403351 緣部之機械式保持機構。再者^基板移載機構’並不 上述機構，也可成為：例如，二件基板保持機構安裝 轉轴周圍處，保持第一及第二載具的基板之後，使其 1 8 0 ° ，維持這狀態並將基板裝載於載具上之構造。另 也可成為利用機械人進行移載的構造。更且，上述雖 對基板以水平搬送、移載等情形加以說明，但不限於 也可成為將基板以垂直搬送、移載且處理的構造。 上述實施形態中雖然針對成列方式蒸鍍裝置加以說 明，但是本發明也可適用於群集式蒸鍍裝置中，如圖 示。此時，第一載具1，係移動在加載互鎖真空室1 0 板移載室2 0之間，第二載具Γ則移動在基板移載室 處理室3 0 ( 3 0 ’、3 0 之間。在移載室中，利用如具備 機械臂6移載第一及第二載具的基板。 加上，如上述般，本發明，並不限於蒸鍍裝置，除 適用於例如在利用濺鍍法製作出可作為曝光用空白光 用的C r氧化膜之裝置上外，也可應用於入蝕刻處理等 處理裝置中。 (發明效果） 由上述可見，根據本發明，可減少先前技術的基板 中所發生的污染問題，可穩定地形成品質良好的薄膜 別是可提供一種能高速製作如氧化鎂等具有吸溼性的 質膜之裝置。 【圖式簡單說明】 圖1為顯示本發明之基板處理裝置的基本架構例之 312/發明說明書(補件)/92-08/92113 979 限於 於旋 旋轉 〖外， 然針 此， 6所 和基 20和 二支 了可 罩所 各種 搬送 ，特 介電 模式 17 200403351 圖。 圖2為用來說明PDP的MgO膜蒸鍍裝置之架構示意圖。 圖3 ( a )〜（f )為用來說明基板移載之示意圖。 圖4為顯示利用本發明進行形成的MgO膜的結晶取向性 之X光繞射圖譜。 圖5為顯示另一蒸鍍裝置的架構例之示意圖。 圖6為顯示另一基板處理裝置的架構例之示意圖。 圖7為用來說明習知蒸鍍裝置之架構示意圖。 圖8為表示薄膜沉積基板的生產片數及水分壓之間關係 之圖表。 圖9為顯示利用習知裝置進行形成的M g 0膜的結晶取向 性之X光繞射圖譜。 圖1 0為顯示能夠抑制大氣中水分影響的習知蒸鍍裝置 例之示意圖。 (元 」牛符 號說明 ) 卜 1， 載 具 2 載 具 3、 3， 基 板 4 搬 送 單 元 5 基 板 移 載 機 構 6 機 械 臂 10 、10, 加 載 互 鎖 真 空室 20 、20， 基 板 移 載 室 2 1 、U 載 具 保 持 機 構 312/發明說明書(補件)/92-08/92113979 18 200403351 23 基 板 保 持 機構 30 處 理 室 (蒸鍍室） 3 1 基 板 裝 載 部 32 蒸 鍍 部 33 基 板 回 收 部 34 MgO 容 納 爐床 35 蒸 鍍 機 構 4 0 〜4 6 門 閥 50 第 一 輔 助 室 60 第 二 輔 助 室 70 第 一 加 熱 室 80 第 二 加 熱 室 19 312/發明說明書(補件)/92-08/92113979200403351 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a substrate processing apparatus and processing method, which continuously transfers a carrier loaded with a substrate to a processing chamber and performs a predetermined process, and particularly relates to a solution capable of solving the problem. The problem of contamination of the processing chamber environment caused by the movement of the carrier between the processing chamber and the atmosphere further stabilizes the processes such as film formation and etching with good quality. [Prior Art] As a conventional example of a substrate processing apparatus, a manufacturing vapor deposition apparatus shown in Fig. 7 will be described. As shown in FIG. 7, in the conventional vapor deposition device, a load interlocking vacuum chamber 10 for carrying in a carrier, a heating chamber 70, a vapor deposition chamber 30, and a load interlocking vacuum chamber 1 for carrying out a carrier 0 'and the like are all connected by door valves 41 to 43, and a transport unit 4 of a carrier 2 is provided in each chamber. As the conveying unit 4, a suitable structure is: In general, a plurality of conveying rollers are provided in two rows, and the driving system is used to rotate the rollers so that the carriers placed on the side-by-side rollers can be moved. The substrate 3 is loaded on the carrier 2 in the atmosphere, and the carrier 2 is transferred from the loading interlocking vacuum chamber 10 to the heating chamber 70. After the substrate is heated to a predetermined temperature, it is transferred to the evaporation chamber 30 to form a thin film. Thereafter, the carrier 2 is sent out to the loading interlocking vacuum chamber 10 ', and is taken out to the atmosphere. After the processed substrate 3 'is recovered, the unprocessed substrate 3 is again loaded on the carrier 2 and returned to the loading interlocking vacuum chamber 10. By repeating these operations, a thin film can be continuously formed on a large number of substrates. In this prior art method, the carrier 2 for transferring the substrate is repeatedly transferred between the atmosphere and the vacuum. As a result, the film attached to the carrier will absorb impurities such as moisture in the atmosphere, etc. 5 312 / Instruction Manual (Supplement) / 92-08 / 92113 979 200403351, and if another film is attached to it, it will cause The adhesiveness is reduced and the film is easily peeled. The particles produced by the peeling of the film are absorbed in the film, causing the film to be defective, which is the cause of the decrease in the yield. In addition, if the vapor deposition device of FIG. 7 is applied to the formation of an M g 0 film of a plasma display (P D P), it is found that a large problem occurs in display performance. If the substrate is repeatedly formed into a film, as shown in Fig. 8, the water pressure in the steaming chamber will increase, and the quality of the MgO film will change. In other words, if the film formation is repeated about 250 times, the vapor pressure in the evaporation chamber becomes about 3 X 1 (Γ4 P a, and the M g 0 film obtained is shown in the X-ray diffraction pattern of FIG. 9, (1 1 1) Films in the form of (2 0 0) and (2 2 0) are mixed on the surface. The secondary electron emission coefficient of the M g 0 film will be different depending on the crystal surface, so if the crystal surface is mixed Uneven brightness is generated, which greatly reduces the display performance of PDP. Therefore, in order to ensure high-performance display performance, it is necessary to maintain the moisture pressure of the evaporation chamber below 3 X 1 0 _ 4 P a. In order to solve the above-mentioned peeling of the attached film Problems such as problems with moisture entering the vapor deposition chamber, Japanese Patent Laid-Open No. 9-2 7 9 3 4 1 discloses a vapor deposition device. The structure of the vapor deposition device is shown in FIG. The load interlocking vacuum chamber 10, the vapor deposition chamber 30, and the load interlocking vacuum chamber 10 'for carrying out the substrate are all connected by the gate valves 4 1, 4 2 and the vapor deposition chamber 30 includes The substrate 3 transferred from the load-locking vacuum chamber 10 is mounted on a substrate 2 (tray). The loading section 31, the evaporation section 32, and the processed substrate are sent out to the substrate recovery section 33 in the loading interlocking vacuum chamber 10 ', and the carrier 2 is circulated in the loading section, the evaporation section, and the recovery 6 312 / Invention Specification (Supplement) / 92-08 / 92 Π 3979 200403351 to avoid exposure to the atmosphere. That is, after the substrate 3 is moved into the load-locking vacuum chamber 10, use the The transfer unit 4 composed of side-by-side rollers is transferred to the carrier 2 (tray) of the substrate loading unit 31, and transferred to the vapor deposition unit 32, and then heated to a predetermined level by a heating mechanism (not shown). Temperature to form a M g 0 film. Thereafter, the carrier 2 is transported to the substrate recovery section 33, and the processed substrate 3 is removed from the carrier 2 'only the substrate is taken out in the loading interlock vacuum chamber 1 0 'Inside. On the other hand, the carrier 2 is returned to the substrate loading section 31 along the upper conveyance path. In this way, the carrier is always transported in a vacuum, so that the adhesion of the film to the atmosphere can be avoided, and particle generation can be greatly controlled. The result of controlling the entry of moisture, etc., makes the whole surface of the substrate have the same Crystal surface and uniform M g 0 film can make it correspond to high-performance PDP. [Summary of the Invention] (Problems to be Solved by the Invention) However, it has been found that in the evaporation device shown in FIG. In fact, there is considerable difficulty in increasing the size. In other words, in a transfer method that transfers only a single substrate, both ends of the substrate are placed on a transfer roller to be transferred, resulting in a large bend on a large substrate. As a result, As a result, the transportation is unstable, and even the substrate may be broken, which causes a problem that it is difficult to manufacture a high-precision and high-performance PDP. This problem is even more prominent when the substrate is transported in the lateral direction in order to shorten the production time. In addition, various settings such as the pitch between the transporting roller rows need to be made according to the size of the substrate, so that it is virtually impossible to support substrates of various sizes, which has the disadvantage of low versatility. In this way, in order to cope with the increase in size and variety of substrates, it was learned that the device must be constructed as a rack that has the substrates mounted on a carrier of a predetermined size when the substrates are carried in. 312 / Invention Manual (Supplement) / 92-08 / 92113979 200403351 , And use the device structure to study film peeling and maintain film quality. It was found in the research that a vapor deposition device has been developed. The structure of the device is to cover the carrier with a masking member during film formation to prevent the film from adhering to the carrier, and the masking member is not removed to leave it on. Vacuum chamber (Japanese Patent Laid-Open No. 1 1-1 3 1 2 3 2). Compared with the device structure shown in Fig. 7, this device is improved, but it is not enough to support high-precision, high-performance large-scale PDP. For example, when the opening of the mask is larger than the opening of the carrier, the film will adhere to the carrier, which causes the same problem as described above, and if the opening of the mask is small, the vapor deposition material will flow to the outer periphery of the substrate. On the other hand, the film is deposited in a thin film and the crystal planes are mixed, which causes a problem of uneven brightness. The above problems occur not only in MgO vapor deposition equipment, but also in film formation equipment such as sputtering or CVD in various thin film formation, or processing equipment such as etching equipment. As for the vacuum substrate processing field, there is an expectation A substrate transfer method that does not affect film quality and processing performance, and enables continuous and stable processing. In this case, an object of the present invention is to provide a substrate processing apparatus and a processing method which can suppress pollution of a processing chamber environment using a carrier, and can realize stable substrate transfer and continuous high-quality substrate processing, and It can support substrates that will continue to grow in the future, and it can support a variety of substrate sizes with high versatility. (Means for Solving the Problem) The substrate processing apparatus of the present invention includes: a loading interlocking vacuum chamber, which is carried into a carrier carrying a substrate; and a substrate transfer chamber, which is provided with the 312 / Invention Specification (Supplementary Document) of the carrier ) / 92-08 / 92113979 200403351 transfer mechanism; substrate processing chamber, which performs predetermined processing on substrates, is characterized by having a movable between the loading interlocking vacuum chamber and the substrate transfer chamber. A first carrier, and a second carrier movable between the substrate transfer chamber and the substrate processing chamber, and the substrate can be transferred between the first and second carriers by using the transfer mechanism . Another feature is that the first carrier carrying the processed substrate is carried out into the loading interlocking vacuum chamber. This makes it possible, for example, to prevent the carrier holding the substrate from being exposed to the atmosphere during film formation, and thus the film quality caused by moisture or the like that is adsorbed or sucked into the carrier adhesion film and brought into the vapor deposition chamber in the atmosphere. The unevenness or film peeling is greatly reduced, and a defect-free and uniform high-quality film can be continuously manufactured on most substrates. In the present invention, the above-mentioned transfer mechanism is composed of two carrier holding mechanisms and a substrate holding mechanism each having a plurality of carrier holding tables and can be replaced with each other, and a holder capable of moving a carrier in the two carrier holding mechanisms. Constituted by the moving mechanism between the stations. By this means, the holding mechanism is used to maintain the state of holding the substrate from the first and second carriers on the holding table, and the carrier is moved between the two holding mechanisms, and the substrate is reloaded while maintaining this state. It is placed on the carrier to transfer the substrate. With this architecture, fast transfer can be accurately performed even on large substrates, and a highly productive substrate processing device can be realized. In addition, compared with a transfer method using a robot or the like, the device area can be greatly reduced, and the cost of the overall substrate processing apparatus can be significantly reduced. In addition, as the substrate holding mechanism described above, it is preferable to use a vacuum adsorption 312 / Invention Specification (Supplement) / 92-08 / 92113979 200403351 or an electrostatic adsorption mechanism. Because the holding mechanism can hold the substrate from the back, it can not only contaminate or scratch the thin-film deposition surface of the substrate surface on substrates of various sizes, but also on substrates of various sizes. Easy and accurate substrate transfer between tools. Furthermore, the substrate transfer chamber is characterized by being maintained in a dry gas environment, such as using N 2 gas. This simplifies the substrate transfer mechanism and the processing device mechanism. In addition, the above carrier preferably supports the four sides of the substrate. In this way, although the substrate is large, the substrate can be controlled to bend and form a uniform film over the entire surface. Furthermore, the present invention is particularly suitable for a relatively hygroscopic material such as a MgO film. High thin formation. The substrate processing method of the present invention is a loading interlocking vacuum chamber for loading or unloading a substrate loaded with a substrate, a substrate transfer chamber capable of transferring a substrate between carriers, and a substrate for performing predetermined processing on a substrate. And a first carrier movable between the loading interlocking empty chamber and the substrate transfer chamber, and a first carrier movable between the board transfer chamber and the substrate processing chamber. The second carrier is characterized in that in the substrate transfer chamber, the substrate is transferred between the first carrier and the second carrier, so that the second carrier can be prevented from being moved out of or into the substrate processing chamber. The substrate is continuously processed by being exposed to the atmosphere. Here, as described above, the above-mentioned transfer mechanism preferably includes two pieces of a carrier holding mechanism having a segment carrier holding frame and capable of moving vertically and a substrate holding mechanism disposed thereon, and a carrier can be made. The two pieces contained in 312 / Invention Specification (Supplements) / 92-08 / 92113979 are wonderful; 〇The upper part of the film is based on the truth 10 The 200403351 is composed of the moving mechanism between the holders of the holding mechanism Or using the holding mechanism to maintain the state of holding the substrate from the first and second carriers on the holder, and moving the carrier between the two holding mechanisms, and reloading the substrate while maintaining this state It is placed on a carrier to transfer the substrate. [Embodiment] The basic structure of the substrate processing apparatus of the present invention is shown in the schematic diagram of FIG. As shown in FIG. 1, the substrate processing apparatus has a structure in which the load interlocking vacuum chamber 10, the substrate transfer chamber 20, and the processing chamber 30 are connected through the gate valves 41 and 4 2 to enable the first carrier 1 Moving the substrate between the loading interlocking vacuum chamber 10 and the substrate transfer chamber 20 allows the substrate to be transported, and the second carrier Γ can be moved between the substrate transfer chamber 20 and the processing chamber 30 to allow the substrate to be transferred. Transport. Here, the substrate transfer chamber 20 is maintained in a dry gas environment such as N 2 gas or a vacuum state, and the substrate transfer mechanism 5 is mounted. The substrate 3 is loaded on the first carrier 1 in the atmosphere, and then carried into the loading interlocking vacuum chamber 10 to form a vacuum (referred to after the substrate transfer chamber is filled with N 2 gas if the N 2 gas environment is used), The gate valve 41 is opened and transferred to the substrate transfer chamber 20. In the substrate transfer chamber 20, a substrate transfer mechanism 5 is used to transfer the substrate 3 from the first carrier 1 to the second carrier Γ, and the second carrier Γ on which the substrate 3 is loaded is transferred to The processing chamber 30 is returned to the substrate transfer chamber 20 after performing a predetermined process. In the substrate transfer chamber, the processed substrate 3 ′ is transferred from the second carrier 1 ′ to the first carrier 1, and the first carrier 1 is taken out into the atmosphere by loading the interlocking vacuum chamber 10, and For 11 312 / Invention Specification (Supplement) / 92-08 / 92113979 200403351, the processed substrate 3 'is exchanged with the unprocessed substrate 3, and then returned to the loading interlocking vacuum chamber 10. As described above, the second carrier entering the processing chamber 30 is not exposed to the atmosphere, and the substrates 3, 3 'are all transported by the carrier. Therefore, stable transportation and processing can be repeatedly and continuously performed even for large substrates. Next, a preferred embodiment of the present invention will be described with reference to the drawings with respect to the MgO film vapor bonding device of the PDP. FIG. 2 is a schematic diagram of the structure of a vapor deposition device for implementing the MgO film forming method of the present invention, and FIG. 3 is a schematic diagram for explaining an example of a substrate transfer method performed in a substrate transfer chamber. In this embodiment, the load interlocking vacuum chamber 10, the first auxiliary chamber 50, the substrate transfer chamber 20, the second auxiliary chamber 60, the first heating chamber 70, the vapor deposition chamber 30, and the carrier are made. The conveying direction is changed, and it is composed of a second heating chamber 80 for heating the substrate. Between each chamber, gate valves 4 1 to 46 are provided. The first and second heating chambers are provided with a heating mechanism (not shown) for heating each substrate to a predetermined temperature. In this embodiment, the loading interlocking vacuum chamber 10, the first auxiliary chamber 50, the second auxiliary chamber 60, the first heating chamber 70, and the vapor deposition chamber 30 are respectively arranged to move the carrier to the figure. Upper transport unit for rightward transport and lower transport unit for leftward transport. Each conveying unit 4 has a structure appropriately adopted, for example, a two-row conveying roller disclosed in Japanese Patent Laid-Open No. 9-2 7 9 3 4 1 and the driving system is used to rotate the rollers so that the loading is performed. The carrier on the roller is transported. In the second heating chamber 80, a single transfer unit is vertically movably mounted, and the unit can move the carrier from the upper transfer path to the lower transfer path. The vertical unit moving mechanism of this conveying unit also adopts the device shown in Japanese Patent Laid-Open No. 9-2 7 9 3 4 No. 12 312 / Invention Specification (Supplement) / 92-08 / 92113979 200403351. A structure in which a conveying unit is vertically moved through a telescopic tube and using, for example, a cylinder. In addition, in the substrate transfer chamber 20, the above-mentioned transfer unit 4 which is different from the carrier holder is double-layered, and two sets of carrier holding mechanisms 2 1 and 2 which can move vertically are arranged on the left and right sides, and The carriers 1 and Γ are moved between the transport units of the two-piece carrier holding mechanism. In addition, as the vertical movement mechanism, for example, the mechanism described in Japanese Patent Application Laid-Open No. 9-2 7 9 3 41 described above is used. Furthermore, a substrate holding mechanism 23 composed of a known adsorption mechanism that applies vacuum adsorption to the substrate is mounted on the top wall of the substrate transfer chamber 20, and an opening is formed in the bottom wall portion of the vapor deposition chamber 30. The lower part is provided with a vapor deposition mechanism 3 5 (for example, a plasma source manufactured by Zhongwai Furnace Industry Co., Ltd.) and an Mg0 storage hearth 34 for containing MgO. An oxygen gas introduction mechanism is provided near the opening to adjust the film quality. A glass substrate (for example, for a 42-inch TV) is mounted on a carrier in a horizontal position and is transported horizontally by a transport system. This transport method will be described below. The substrate is held at its four sides, and a thin film is formed on one surface of the substrate (the lower side in this embodiment). 'The first carrier 1, which circulates in the atmosphere, between the loading interlocking vacuum chamber 10 and the substrate transfer chamber 20, and the second carrier 1', which circulates in the substrate transfer chamber 20 and the second heating Room between 80. First, the glass substrate 3 is loaded on the first carrier 1 and carried into the load-locking vacuum chamber 10. The interlocking vacuum chamber 10 is loaded and exhausted to a predetermined pressure (about 1 (Γ5 Pa). Then, the gate valve 41 is opened, and the first carrier 1 is transported 13 312 / Invention Manual (Supplement) / 92-08 / 92113 979 200403351 into the first auxiliary chamber 50. The first carrier 1 carried into the first auxiliary chamber 50 is heated to about 150 ° C by a heating mechanism (not shown) for deaeration treatment. Stop heating After reaching 1 (Γ4 P a, dry N 2 gas is introduced to atmospheric pressure. At this time, on the lower transfer unit of the second auxiliary chamber 60, wait for a second load on which the processed substrate 3 ′ has been loaded. With 1 ', N2 gas has been introduced into the room. In addition, the substrate transfer chamber is filled with atmospheric N2 gas. Referring to FIG. 3, the substrate transfer operation from this state to the substrate transfer chamber 20 will be described. Since In the state of FIG. 3 (a), opening the gate valve 42 allows the first carrier 1 to be transferred to the upper carrier of the first carrier holding mechanism 21 of the substrate transfer chamber 20. In contrast, opening the gate valve 4 3 can The second carrier 1 ′ on which the film-formed substrate 3 ′ is loaded is transferred from the second auxiliary chamber 60 to the second carrier. The lower shelf of the mechanism 22 is shown in Fig. 3 (b). The substrate holding mechanism 23 is pressed down from the top wall of the substrate transfer chamber through a telescopic tube using a cylinder (not shown), and contacts each substrate to form a vacuum suction. At this time, after the first and second carrier holding mechanisms 2 1 and 2 2 are moved to the same height, the transfer roller is rotated to make the first and second carriers move to the opposite carrier holding mechanisms respectively. Figure 3 (c) on the unit. Then, the substrate holding mechanism 23 is again pushed down, the processed substrate 3 'is loaded on the first carrier 1, and the unprocessed substrate 3 is loaded on the second carrier Γ. d). Secondly, the first and second carriers are moved to the units on the opposite directions, respectively, as shown in Figure 3 (e). Then, the first and second carrier holding mechanisms are moved vertically, and the gate valves 42, 43 are opened, so that the first One carrier 1 is transferred to the lower part 14 of the first auxiliary room 50 312 / Invention Manual (Supplement) / 92-08 / 92113979 200403351 transfer unit, and the second carrier Γ is transferred to the upper part of the second auxiliary room 60 The conveying unit is shown in Fig. 3 (f). Next, in the second auxiliary chamber 60, exhaust is performed to a predetermined air pressure of After about 1 (Γ5 Pa, the door valve 44 is opened, and the second carrier is transferred into the first heating chamber 70. In the first heating chamber 70, heating is performed to about 30 by a heating mechanism (not shown). Degas up to 0 ° C. Degas again until the pressure reaches about 10_3Pa. After that, open the gate valve 45 to move the second carrier to the second heating chamber 80 after passing through the evaporation chamber 30 and heat it. Predetermined time. Within the second heating chamber 80, the carrying unit 4 loaded with a carrier is lowered by a vertical movement mechanism shown in, for example, Japanese Patent Laid-Open No. 9-9 7 9 3 4 1 so that the door valve is opened again. 46. The second carrier moves in a direction opposite to the carrying direction and is carried into the evaporation chamber 30. The substrate heating is not limited to those in the above embodiment, and may be performed in the load interlocking vacuum chamber 10 or the second auxiliary chamber. In the vapor deposition chamber 30, a MgO film is deposited on the substrate 3 loaded on the second carrier? Under predetermined formation conditions. That is, an oxygen gas of 80 sccm is introduced into the vapor deposition chamber, and an Ar gas is introduced to a pressure of 0.1 Pa, and then a plasma evaporation source is started, so that a Mg 0 film is deposited on the substrate. After that, the second carrier 1 'is transferred to the substrate transfer chamber 20 through the first heating chamber 70 and the second auxiliary chamber 60, and the substrate is transferred between the first and second carriers as described above. The processed substrate 3 'loaded on the first carrier 1 is transported to the loading interlocking vacuum chamber 10 through the first auxiliary chamber 50. After being introduced into the atmosphere, the first carrier is taken out of the atmosphere, and the processed substrate 3 'is recovered, while the unprocessed substrate 15 312 / Invention Specification (Supplement) / 92-08 / 92113979 200403351 3 is loaded on the first carrier again 1 on. As described above, the MgO film can be continuously deposited on the substrate. In the meantime, since the second carrier 1 'does not come into contact with the atmosphere, it is possible to stably form an M g 0 film that is not easily peeled off and has no defects. In addition, in terms of the X-ray diffraction pattern of the obtained M g 0 film, even if the film formation is repeated 3,000 times, it still shows the one with (1 11) crystals as shown in FIG. 4 and can continue Produce high-performance PDPs with no uneven brightness. For reference, B, A, and C represent measurements of diffraction patterns at the center of the substrate and 3 cm from the edge of the substrate. The structure of the device shown in FIG. 1 is a structure in which only two loading interlocking vacuum chambers are used to move in and out of the vehicle. It is also possible to use two loading interlocking vacuum chambers to move in from one side and move out of the other. An example of this is shown in Fig. 5. In the apparatus of FIG. 5, substrate transfer chambers 20 and 20 ′ and loading interlocking vacuum chambers 10 and 10 ′ are arranged on both sides of the processing chamber 30 and two sets of first carriers 1 and second carriers 1 ′ are arranged. The two sets of first carriers 1 can be moved between the first substrate transfer chamber 20 and the first loading interlocking vacuum chamber 10 and the atmosphere, and can be moved between the second substrate transfer chamber 20 and the second load. Between the interlocking vacuum chamber 10 and the atmosphere, the second carrier 1 'can be moved between the first substrate transfer chamber 20, the processing chamber 30, and the second substrate transfer chamber 20'. In addition, in the present invention, the number and arrangement of the processing chambers and auxiliary chambers of the substrate processing apparatus, and the number of carriers circulating in the substrate processing apparatus at the same time can be appropriately determined according to, for example, the yield time in each chamber. Selected. In addition, in this embodiment, although a vacuum adsorption mechanism is used as the substrate holding mechanism of the substrate transfer chamber, a known electrostatic adsorption mechanism or a method disclosed in Japanese Patent Application Laid-Open No. 9-2 7 9 3 4 1 may be used. Mechanical holding mechanism for holding the edge of the substrate 16 312 / Invention Manual (Supplement) / 92-08 / 92113979 200403351. Furthermore, ^ the substrate transfer mechanism is not the above-mentioned mechanism, and may be: for example, two substrate holding mechanisms are installed around the rotation shaft, and after the substrates of the first and second carriers are held, they are maintained at 180 ° to maintain In this state, the substrate is mounted on a carrier. It can also be a structure for transferring by a robot. Furthermore, although the case where the substrate is conveyed horizontally and transferred is described above, it is not limited to a structure in which the substrate is vertically conveyed, transferred, and processed. Although the in-line vapor deposition device has been described in the above embodiment, the present invention can also be applied to a cluster vapor deposition device as shown in the figure. At this time, the first carrier 1 is moved between the loading interlocking vacuum chamber 10 and the plate transfer chamber 20, and the second carrier Γ is moved in the substrate transfer chamber processing chamber 3 0 (3 0 ', 3 Between 0. In the transfer chamber, the substrates of the first and second carriers are transferred using a robot arm 6, for example. In addition, as described above, the present invention is not limited to a vapor deposition apparatus. The device for producing a Cr oxide film that can be used as a blank light for exposure by a sputtering method can also be applied to a processing device such as an etching treatment. (Inventive effect) As can be seen from the above, according to the present invention, the previous method can reduce The problem of contamination that occurs in the substrate of the technology can stably form a film of good quality. In addition, it can provide a device capable of producing a hygroscopic quality film such as magnesium oxide at high speed. [Schematic description] Figure 1 shows Basic structure example of the substrate processing apparatus of the present invention No. 312 / Invention Specification (Supplement) / 92-08 / 92113 979 Limited to rotation and rotation. However, the 6th and the 20th and the 2nd can cover various types Transport, Special dielectric mode 17 200403351 Figure 2. Figure 2 The schematic diagram of the MgO film evaporation device of the PDP is illustrated. Figures 3 (a) ~ (f) are schematic diagrams for explaining substrate transfer. Figure 4 is X showing the crystal orientation of the MgO film formed by the present invention. Light diffraction pattern. Fig. 5 is a schematic diagram showing an example of the structure of another evaporation device. Fig. 6 is a schematic diagram showing an example of the structure of another substrate processing device. Fig. 7 is a schematic diagram for explaining the structure of a conventional evaporation device. Fig. 8 is a graph showing the relationship between the number of sheets produced and the water pressure of a thin film deposition substrate. Fig. 9 is an X-ray diffraction pattern showing the crystal orientation of a Mg 0 film formed by a conventional device. Fig. 10 is Schematic diagram showing an example of a conventional vapor deposition device capable of suppressing the influence of moisture in the atmosphere. (Yuan symbol description of cattle) Bu 1, carrier 2 carrier 3, 3, substrate 4 transfer unit 5 substrate transfer mechanism 6 robot arm 10, 10, loading interlocking vacuum chambers 20, 20, substrate transfer chamber 2 1, U carrier holding mechanism 312 / invention manual (Supplement) / 92-08 / 92113979 18 200403351 23 Holding mechanism 30 processing chamber (evaporation chamber) 3 1 substrate loading section 32 evaporation section 33 substrate recovery section 34 MgO storage hearth 35 vapor deposition mechanism 4 0 to 4 6 gate valve 50 first auxiliary chamber 60 second auxiliary chamber 70 First heating chamber 80 Second heating chamber 19 312 / Invention specification (Supplement) / 92-08 / 92113979