TW200401903A - Mixed crystal oxide single crystal containing Yb, light emitting material containing such single crystal, γ ray detecting device and positron tomography device - Google Patents

Mixed crystal oxide single crystal containing Yb, light emitting material containing such single crystal, γ ray detecting device and positron tomography device Download PDF

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Publication number
TW200401903A
TW200401903A TW92115793A TW92115793A TW200401903A TW 200401903 A TW200401903 A TW 200401903A TW 92115793 A TW92115793 A TW 92115793A TW 92115793 A TW92115793 A TW 92115793A TW 200401903 A TW200401903 A TW 200401903A
Authority
TW
Taiwan
Prior art keywords
single crystal
oxide
yyybx
luyybx
gdyybx
Prior art date
Application number
TW92115793A
Other languages
English (en)
Chinese (zh)
Inventor
Tsuguo Fukuda
Akira Yoshikawa
Takuji Tsuzaki
Hikaru Koike
Original Assignee
Koike Co Ltd
Mitsubishi Corp
Fukuda Crystal Lab Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koike Co Ltd, Mitsubishi Corp, Fukuda Crystal Lab Ltd filed Critical Koike Co Ltd
Publication of TW200401903A publication Critical patent/TW200401903A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Luminescent Compositions (AREA)
  • Lasers (AREA)
TW92115793A 2002-06-11 2003-06-11 Mixed crystal oxide single crystal containing Yb, light emitting material containing such single crystal, γ ray detecting device and positron tomography device TW200401903A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002170174A JP2005343701A (ja) 2002-06-11 2002-06-11 Ｙｂを含む混晶酸化物単結晶

Publications (1)

Publication Number Publication Date
TW200401903A true TW200401903A (en) 2004-02-01

Family

ID=29727756

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92115793A TW200401903A (en) 2002-06-11 2003-06-11 Mixed crystal oxide single crystal containing Yb, light emitting material containing such single crystal, γ ray detecting device and positron tomography device

Country Status (4)

Country Link
JP (1) JP2005343701A (ja)
AU (1) AU2003242191A1 (ja)
TW (1) TW200401903A (ja)
WO (1) WO2003104533A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004034189B4 (de) 2004-07-14 2019-10-17 Giesecke+Devrient Currency Technology Gmbh Wertdokument
CN100365172C (zh) * 2006-04-12 2008-01-30 中国科学院上海光学精密机械研究所 镱铒共掺的硅酸钆激光晶体及其制备方法
CN102051673B (zh) * 2010-11-11 2012-07-11 福州高意通讯有限公司 一种折射率渐变双折射晶体生长方法
JP6259609B2 (ja) * 2013-08-20 2018-01-10 学校法人東海大学 アップコンバージョン型蛍光体およびその製造方法
CN108203844B (zh) * 2018-01-09 2021-03-19 上海应用技术大学 钽酸镁系列晶体及其制备方法
KR102027444B1 (ko) * 2019-01-25 2019-10-02 나노씨엠에스(주) 근적외선에 의해 여기되는 근적외선 발광체 및 그의 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891520A (en) * 1987-09-05 1990-01-02 Hitachi, Ltd. Radiation detector
JPH0794820A (ja) * 1993-09-24 1995-04-07 Ibiden Co Ltd 単結晶薄膜および固体レーザ素子

Also Published As

Publication number Publication date
AU2003242191A8 (en) 2003-12-22
WO2003104533A1 (ja) 2003-12-18
AU2003242191A1 (en) 2003-12-22
JP2005343701A (ja) 2005-12-15

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