TW200308007A - Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers - Google Patents
Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers Download PDFInfo
- Publication number
- TW200308007A TW200308007A TW092105543A TW92105543A TW200308007A TW 200308007 A TW200308007 A TW 200308007A TW 092105543 A TW092105543 A TW 092105543A TW 92105543 A TW92105543 A TW 92105543A TW 200308007 A TW200308007 A TW 200308007A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- layer
- solution
- pad
- item
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 565
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 175
- 229910052802 copper Inorganic materials 0.000 title claims description 173
- 239000010949 copper Substances 0.000 title claims description 173
- 230000004888 barrier function Effects 0.000 title claims description 109
- 238000000034 method Methods 0.000 title claims description 82
- 239000000126 substance Substances 0.000 title claims description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000007517 polishing process Methods 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 29
- 239000007800 oxidant agent Substances 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 23
- 238000012545 processing Methods 0.000 claims description 22
- 239000003112 inhibitor Substances 0.000 claims description 17
- 239000002002 slurry Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- 230000033001 locomotion Effects 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 7
- 239000004615 ingredient Substances 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000008139 complexing agent Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000008119 colloidal silica Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 230000002441 reversible effect Effects 0.000 claims description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims 2
- 229940075614 colloidal silicon dioxide Drugs 0.000 claims 1
- 239000000243 solution Substances 0.000 description 268
- 235000012431 wafers Nutrition 0.000 description 184
- 230000008569 process Effects 0.000 description 36
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 239000000758 substrate Substances 0.000 description 20
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 19
- 229910052750 molybdenum Inorganic materials 0.000 description 19
- 239000011733 molybdenum Substances 0.000 description 19
- 230000001590 oxidative effect Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 12
- 239000003153 chemical reaction reagent Substances 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 6
- 238000007664 blowing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- LZHQPJSJEITGHB-UHFFFAOYSA-N 2-[1-(hydroxymethyl)-2,6-dioxopiperidin-3-yl]isoindole-1,3-dione Chemical compound O=C1N(CO)C(=O)CCC1N1C(=O)C2=CC=CC=C2C1=O LZHQPJSJEITGHB-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- -1 barriers Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000005201 scrubbing Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 240000005979 Hordeum vulgare Species 0.000 description 1
- 235000007340 Hordeum vulgare Nutrition 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36500102P | 2002-03-13 | 2002-03-13 | |
| US10/199,471 US20040014399A1 (en) | 2002-07-19 | 2002-07-19 | Selective barrier removal slurry |
| US41754402P | 2002-10-10 | 2002-10-10 | |
| US10/346,425 US6857947B2 (en) | 2002-01-17 | 2003-01-17 | Advanced chemical mechanical polishing system with smart endpoint detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200308007A true TW200308007A (en) | 2003-12-16 |
Family
ID=28046746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092105543A TW200308007A (en) | 2002-03-13 | 2003-03-13 | Method and apparatus for integrated chemical mechanical polishing of copper and barrier layers |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20040023607A1 (de) |
| EP (1) | EP1483785A1 (de) |
| CN (1) | CN1653600A (de) |
| AU (1) | AU2003224233A1 (de) |
| TW (1) | TW200308007A (de) |
| WO (1) | WO2003079428A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
| CN1731567B (zh) * | 2005-06-22 | 2010-08-18 | 中国科学院上海微系统与信息技术研究所 | 集成电路铜互连一步化学机械抛光工艺及相应纳米抛光液 |
| US8728934B2 (en) | 2011-06-24 | 2014-05-20 | Tessera, Inc. | Systems and methods for producing flat surfaces in interconnect structures |
| CN103100968B (zh) * | 2011-11-11 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨装置及使用该装置对硅片进行研磨的方法 |
| CN103182676B (zh) * | 2011-12-29 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | 研磨垫、使用该研磨垫的研磨装置及研磨方法 |
| US10293462B2 (en) * | 2013-07-23 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad conditioner and method of reconditioning planarization pad |
| CN105817991A (zh) * | 2015-01-06 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨方法 |
| CN112338640B (zh) * | 2020-09-28 | 2022-02-01 | 上海新昇半导体科技有限公司 | 化学机械抛光方法和装置 |
| CN114952600B (zh) * | 2022-07-11 | 2023-09-19 | 赛莱克斯微系统科技（北京）有限公司 | 高频传输微结构的平坦化方法、装置及电子设备 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5145689A (en) * | 1990-10-17 | 1992-09-08 | Exxon Chemical Patents Inc. | Meltblowing die |
| US5593344A (en) * | 1994-10-11 | 1997-01-14 | Ontrak Systems, Inc. | Wafer polishing machine with fluid bearings and drive systems |
| US6050884A (en) * | 1996-02-28 | 2000-04-18 | Ebara Corporation | Polishing apparatus |
| US5762536A (en) * | 1996-04-26 | 1998-06-09 | Lam Research Corporation | Sensors for a linear polisher |
| US5916012A (en) * | 1996-04-26 | 1999-06-29 | Lam Research Corporation | Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher |
| US6012970A (en) * | 1997-01-15 | 2000-01-11 | Motorola, Inc. | Process for forming a semiconductor device |
| US7018282B1 (en) * | 1997-03-27 | 2006-03-28 | Koninklijke Philips Electronics N.V. | Customized polishing pad for selective process performance during chemical mechanical polishing |
| US5855792A (en) * | 1997-05-14 | 1999-01-05 | Integrated Process Equipment Corp. | Rinse water recycling method for semiconductor wafer processing equipment |
| US5756272A (en) * | 1997-05-19 | 1998-05-26 | Eastman Kodak Company | Simultaneous coatings of stearamide lubricant layer and transparent magnetic recording layer for photographic element |
| US6146248A (en) * | 1997-05-28 | 2000-11-14 | Lam Research Corporation | Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher |
| US6001730A (en) * | 1997-10-20 | 1999-12-14 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers |
| EP0954407B1 (de) * | 1997-11-21 | 2004-07-21 | Ebara Corporation | Vorrichtung zum polieren |
| US6248000B1 (en) * | 1998-03-24 | 2001-06-19 | Nikon Research Corporation Of America | Polishing pad thinning to optically access a semiconductor wafer surface |
| JP3701126B2 (ja) * | 1998-09-01 | 2005-09-28 | 株式会社荏原製作所 | 基板の洗浄方法及び研磨装置 |
| US6461226B1 (en) * | 1998-11-25 | 2002-10-08 | Promos Technologies, Inc. | Chemical mechanical polishing of a metal layer using a composite polishing pad |
| US6103628A (en) * | 1998-12-01 | 2000-08-15 | Nutool, Inc. | Reverse linear polisher with loadable housing |
| US6117779A (en) * | 1998-12-15 | 2000-09-12 | Lsi Logic Corporation | Endpoint detection method and apparatus which utilize a chelating agent to detect a polishing endpoint |
| US6261158B1 (en) * | 1998-12-16 | 2001-07-17 | Speedfam-Ipec | Multi-step chemical mechanical polishing |
| US6241583B1 (en) * | 1999-02-04 | 2001-06-05 | Applied Materials, Inc. | Chemical mechanical polishing with a plurality of polishing sheets |
| US6244935B1 (en) * | 1999-02-04 | 2001-06-12 | Applied Materials, Inc. | Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet |
| US6475070B1 (en) * | 1999-02-04 | 2002-11-05 | Applied Materials, Inc. | Chemical mechanical polishing with a moving polishing sheet |
| SG87886A1 (en) * | 1999-02-11 | 2002-04-16 | Applied Materials Inc | Chemical mechanical polishing processes and components |
| US6099662A (en) * | 1999-02-11 | 2000-08-08 | Taiwan Semiconductor Manufacturing Company | Process for cleaning a semiconductor substrate after chemical-mechanical polishing |
| US6135859A (en) * | 1999-04-30 | 2000-10-24 | Applied Materials, Inc. | Chemical mechanical polishing with a polishing sheet and a support sheet |
| US6322427B1 (en) * | 1999-04-30 | 2001-11-27 | Applied Materials, Inc. | Conditioning fixed abrasive articles |
| US6261157B1 (en) * | 1999-05-25 | 2001-07-17 | Applied Materials, Inc. | Selective damascene chemical mechanical polishing |
| JP3990073B2 (ja) * | 1999-06-17 | 2007-10-10 | 株式会社荏原製作所 | 基板洗浄装置及び基板洗浄方法 |
| US6241585B1 (en) * | 1999-06-25 | 2001-06-05 | Applied Materials, Inc. | Apparatus and method for chemical mechanical polishing |
| US6722963B1 (en) * | 1999-08-03 | 2004-04-20 | Micron Technology, Inc. | Apparatus for chemical-mechanical planarization of microelectronic substrates with a carrier and membrane |
| US6406363B1 (en) * | 1999-08-31 | 2002-06-18 | Lam Research Corporation | Unsupported chemical mechanical polishing belt |
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| US6368955B1 (en) * | 1999-11-22 | 2002-04-09 | Lucent Technologies, Inc. | Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities |
| US6248006B1 (en) * | 2000-01-24 | 2001-06-19 | Chartered Semiconductor Manufacturing Ltd. | CMP uniformity |
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| US6261959B1 (en) * | 2000-03-31 | 2001-07-17 | Lam Research Corporation | Method and apparatus for chemically-mechanically polishing semiconductor wafers |
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| TW462908B (en) * | 2000-09-25 | 2001-11-11 | United Microelectronics Corp | Chemical mechanical polishing |
| US6464568B2 (en) * | 2000-12-04 | 2002-10-15 | Intel Corporation | Method and chemistry for cleaning of oxidized copper during chemical mechanical polishing |
| US20020100743A1 (en) * | 2000-12-05 | 2002-08-01 | Bonner Benjamin A. | Multi-step polish process to control uniformity when using a selective slurry on patterned wafers |
| US6521523B2 (en) * | 2001-06-15 | 2003-02-18 | Silicon Integrated Systems Corp. | Method for forming selective protection layers on copper interconnects |
| US6566266B2 (en) * | 2001-07-18 | 2003-05-20 | Texas Instruments Incorporated | Method of polishing a layer comprising copper using an oxide inhibitor slurry |
| US6579798B2 (en) * | 2001-09-24 | 2003-06-17 | Texas Instruments Incorporated | Processes for chemical-mechanical polishing of a semiconductor wafer |
| US6736701B1 (en) * | 2001-11-20 | 2004-05-18 | Taiwan Semiconductor Manufacturing Company | Eliminate broken line damage of copper after CMP |
| US6726535B2 (en) * | 2002-04-25 | 2004-04-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing localized Cu corrosion during CMP |
| US6555477B1 (en) * | 2002-05-22 | 2003-04-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing Cu CMP corrosion |
| US6767274B2 (en) * | 2002-11-07 | 2004-07-27 | Taiwan Semiconductor Manufacturing Company | Method to reduce defect/slurry residue for copper CMP |
-
2003
- 2003-03-13 US US10/387,698 patent/US20040023607A1/en not_active Abandoned
- 2003-03-13 CN CNA038109743A patent/CN1653600A/zh active Pending
- 2003-03-13 EP EP03720656A patent/EP1483785A1/de not_active Withdrawn
- 2003-03-13 AU AU2003224233A patent/AU2003224233A1/en not_active Abandoned
- 2003-03-13 WO PCT/GB2003/001066 patent/WO2003079428A1/en not_active Application Discontinuation
- 2003-03-13 TW TW092105543A patent/TW200308007A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN1653600A (zh) | 2005-08-10 |
| WO2003079428A1 (en) | 2003-09-25 |
| AU2003224233A1 (en) | 2003-09-29 |
| US20040023607A1 (en) | 2004-02-05 |
| EP1483785A1 (de) | 2004-12-08 |
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