TW200307285A - Triple sample sensing for magnetic random access memory (MRAM) with series diodes - Google Patents

Triple sample sensing for magnetic random access memory (MRAM) with series diodes Download PDF

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Publication number
TW200307285A
TW200307285A TW091136378A TW91136378A TW200307285A TW 200307285 A TW200307285 A TW 200307285A TW 091136378 A TW091136378 A TW 091136378A TW 91136378 A TW91136378 A TW 91136378A TW 200307285 A TW200307285 A TW 200307285A
Authority
TW
Taiwan
Prior art keywords
lattice
array
resistance value
reference current
selected memory
Prior art date
Application number
TW091136378A
Other languages
English (en)
Chinese (zh)
Inventor
Frederick A Perner
Lung T Tran
Kenneth J Eldredge
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of TW200307285A publication Critical patent/TW200307285A/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G11C2013/0057—Read done in two steps, e.g. wherein the cell is read twice and one of the two read values serving as a reference value
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW091136378A 2002-05-22 2002-12-17 Triple sample sensing for magnetic random access memory (MRAM) with series diodes TW200307285A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/151,915 US6757188B2 (en) 2002-05-22 2002-05-22 Triple sample sensing for magnetic random access memory (MRAM) with series diodes

Publications (1)

Publication Number Publication Date
TW200307285A true TW200307285A (en) 2003-12-01

Family

ID=29548410

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091136378A TW200307285A (en) 2002-05-22 2002-12-17 Triple sample sensing for magnetic random access memory (MRAM) with series diodes

Country Status (6)

Country Link
US (2) US6757188B2 (enExample)
EP (1) EP1369875A1 (enExample)
JP (1) JP2004005972A (enExample)
KR (1) KR20030091712A (enExample)
CN (1) CN1459792A (enExample)
TW (1) TW200307285A (enExample)

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US7397074B2 (en) * 2005-01-12 2008-07-08 Samsung Electronics Co., Ltd. RF field heated diodes for providing thermally assisted switching to magnetic memory elements
US7145824B2 (en) * 2005-03-22 2006-12-05 Spansion Llc Temperature compensation of thin film diode voltage threshold in memory sensing circuit
WO2007015358A1 (ja) 2005-08-02 2007-02-08 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法
KR100655438B1 (ko) * 2005-08-25 2006-12-08 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
WO2007040189A1 (ja) * 2005-10-03 2007-04-12 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法
US7372753B1 (en) * 2006-10-19 2008-05-13 Unity Semiconductor Corporation Two-cycle sensing in a two-terminal memory array having leakage current
US7379364B2 (en) * 2006-10-19 2008-05-27 Unity Semiconductor Corporation Sensing a signal in a two-terminal memory array having leakage current
US7768812B2 (en) 2008-01-15 2010-08-03 Micron Technology, Inc. Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
US8034655B2 (en) 2008-04-08 2011-10-11 Micron Technology, Inc. Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
US7760542B2 (en) 2008-04-21 2010-07-20 Seagate Technology Llc Spin-torque memory with unidirectional write scheme
KR100972090B1 (ko) * 2008-04-28 2010-07-22 최한순 숯을 이용한 실내 마감재 및 그 제조방법
US8211743B2 (en) 2008-05-02 2012-07-03 Micron Technology, Inc. Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes
US8134137B2 (en) 2008-06-18 2012-03-13 Micron Technology, Inc. Memory device constructions, memory cell forming methods, and semiconductor construction forming methods
US9343665B2 (en) 2008-07-02 2016-05-17 Micron Technology, Inc. Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
US8233319B2 (en) 2008-07-18 2012-07-31 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US8072793B2 (en) * 2008-09-04 2011-12-06 Macronix International Co., Ltd. High density resistance based semiconductor device
US7933146B2 (en) * 2008-10-08 2011-04-26 Seagate Technology Llc Electronic devices utilizing spin torque transfer to flip magnetic orientation
US7933137B2 (en) * 2008-10-08 2011-04-26 Seagate Teachnology Llc Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures
US8411477B2 (en) 2010-04-22 2013-04-02 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8427859B2 (en) 2010-04-22 2013-04-23 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8289763B2 (en) 2010-06-07 2012-10-16 Micron Technology, Inc. Memory arrays
US8351242B2 (en) 2010-09-29 2013-01-08 Micron Technology, Inc. Electronic devices, memory devices and memory arrays
US8759809B2 (en) 2010-10-21 2014-06-24 Micron Technology, Inc. Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
US8796661B2 (en) 2010-11-01 2014-08-05 Micron Technology, Inc. Nonvolatile memory cells and methods of forming nonvolatile memory cell
US8526213B2 (en) 2010-11-01 2013-09-03 Micron Technology, Inc. Memory cells, methods of programming memory cells, and methods of forming memory cells
US9454997B2 (en) 2010-12-02 2016-09-27 Micron Technology, Inc. Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
US8431458B2 (en) 2010-12-27 2013-04-30 Micron Technology, Inc. Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
US8791447B2 (en) 2011-01-20 2014-07-29 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
US8488365B2 (en) 2011-02-24 2013-07-16 Micron Technology, Inc. Memory cells
US8537592B2 (en) 2011-04-15 2013-09-17 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
US8693273B2 (en) 2012-01-06 2014-04-08 Headway Technologies, Inc. Reference averaging for MRAM sense amplifiers
KR101892415B1 (ko) * 2018-01-16 2018-08-27 한양대학교 산학협력단 자기 저항 메모리 장치 및 이에 있어서 메모리 셀 불량 검사 방법
US10854259B2 (en) * 2018-06-29 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM)
US11222678B1 (en) * 2020-10-02 2022-01-11 Sandisk Technologies Llc MRAM cross-point memory with reversed MRAM element vertical orientation
CN115565573A (zh) 2021-07-02 2023-01-03 联华电子股份有限公司 半导体元件

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US6169686B1 (en) * 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
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US6501697B1 (en) * 2001-10-11 2002-12-31 Hewlett-Packard Company High density memory sense amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424553B (zh) * 2007-06-14 2014-01-21 Micron Technology Inc 用於二極體存取之交叉點電阻性記憶體陣列的電路，偏壓方案以及製造方法

Also Published As

Publication number Publication date
JP2004005972A (ja) 2004-01-08
CN1459792A (zh) 2003-12-03
KR20030091712A (ko) 2003-12-03
EP1369875A1 (en) 2003-12-10
US6757188B2 (en) 2004-06-29
US20040090841A1 (en) 2004-05-13
US6873544B2 (en) 2005-03-29
US20030218902A1 (en) 2003-11-27

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