TW200305959A - Ball grid array semiconductor package with resin coated metal core - Google Patents

Ball grid array semiconductor package with resin coated metal core Download PDF

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TW200305959A
TW200305959A TW092109295A TW92109295A TW200305959A TW 200305959 A TW200305959 A TW 200305959A TW 092109295 A TW092109295 A TW 092109295A TW 92109295 A TW92109295 A TW 92109295A TW 200305959 A TW200305959 A TW 200305959A
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metal core
core
coated
resin
semiconductor
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TW092109295A
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TWI229394B (en
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Rung-Huei Wang
Jiun-Jr Chen
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Scientek Corp
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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
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    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

200305959 五、發明說明（l) 【發明所屬之技術領域】 本發明係有關一種使用樹酯塗覆於球閘陣列金屬核心 之半導體封裝，尤其是指一種球閘陣列半導體封裝，該封 裝使用一樹酯塗覆之金屬核心基板。 【先前技術】 由於電子裝置已經演變為更具有密集性及多樣性，所 以電晶體於電子產品中已經不常使用，取而代之的是精密 的積體電路。
^ 因此，半導體封裝經由一持續性的發展以後，目前最 常使用的封裝方法係為球閘陣列（BGA )，該形式之半導 體裝置使用球體取代傳統之電線當作導線。 請參閱第1圖，其係為習知之BGA半導體封裝結構截面 圖。如圖所示，習知之BGA裝置係包括一半導體晶片1〇2， 具有一積體電路及複數個輸入/輸出信號腳i 〇 4，該晶片係 經由一連接層1 〇 6連接於印刷電路板（pcB ) n 〇之上表面 中央邻为，该PCB110包含有一樹酯基板hi，其具有電路 f局於基板之上、下各表面，該電路布局係分別由複數條 ，電電路112、113所形成，而導電電路112、113塗覆有一 高分子樹酯防銲漆1 3 0。
一晶片腳11 6其係形成於樹酯基板111之上表面之中央 部分’以連接及固定半導體晶片i 〇 2，該晶片J 〇 2經由一連 接層1 0 6以連接晶片腳丨丨6，複數條導電電路之第一條電路 112其係預先設置於基板ui之上表面，以形成該上部之電 路布局，該上部電路布局其係經由一高分子樹酯防銲漆
第5頁 200305959 五、發明說明（2) ' 130所塗覆’複數條導電電路之第二條電路113係形成於基 板111之下表面’以電性連接第一條導電電路丨丨2，一電路 錫球面11 5具有一雙層結構包括一鎳層丨丨5b及一金層丨丨“ ’該電路錫球面115透過電解鍍金程序形成於第二^導電 電路11 3上’ 一錫球1 2 0係焊接於每一個電路錫球面丨丨5下 ’作為封裝1 0 0之輸出/輸入信號接頭裝置，在封裝丨〇 〇安 裝於主機板時用來傳遞信號之用，半導體晶片1 〇2"之信號 輸入/輸出接腳1 0 4以電線1 4 0之電性連接至該第一條導電 電路11 2 ’该晶片1 0 2及電線1 4 0係使用_環氧樹酯塗覆以 形成一封包1 5 0於封裝1 0 0之側邊。 如上述習知之BGA裝置具有一些缺點，例如：複數遮 罩製程，部分製程之步驟及原料使得這些裝置相當昂貴， 而且習知裝置之PCB基板存在不易散熱之問題，裝置容'易 受到溫度影響。 ~ 所以習知之BGA半導體封裝需要改進散熱效能、提高 穩定度及降低成本。 【發明内容】 本發明其係提供一球閘陣列半導體封裝，其具有一樹 酉旨塗覆之金屬核心基板以增進散熱效能、提高ϋ度且降 低成本。 本發明之一較佳實施例係使用樹酯塗覆金屬核心基板 之BGA半導體封裝，其主要部分有一金屬核心、樹酯基板 、錫球、黏著劑、晶片、導線及封裝體。 該金屬核心係為一金屬導引骨架，其係使用於習知之
200305959 五、發明說明（3) 半導體封裝之導引骨架，該金屬核心係由一導 如銅 原料所製成，電子傳導路徑形成在金屬骨架上以提供 信號傳送所需要之途徑，該金屬核心係利用—樹醋塗覆以 形成一基板結構。 if晶片係利用一黏著劑，黏接於該樹醋覆蓋之 至屬核心基板。 複數條導線連接或接合於導電端或電路於曰 之側邊及該金屬核心上，值得注意的是除了全 =或錫球連接之區域外，該樹醋完全塗覆在金屬核=周 導線是用來產生一選擇性電性連接於 半導體晶片之電路及金屬核心。〜 、接腳、 複數個錫球其係以一電性連接至金、 由鉛、:錫或其他導電物質製成，作為半置该錫球係 以傳送輸入/輸出之電子信號於半導 、之電極， 、骨架、或其他在半導體裝置二體連 膠態封裝體係將樹醋基板、導線、黏 方法，黏著固定並保護密= 印：或其他塗覆之 ’使之與外界環境隔離。因：基板:U:旨基板及導線 封裝體之間的黏性比習用之“核心' ί f;材質’基板與 本發明之半導體裳置所 旨材質部分，因為封裝 係^ 該裝置 有類似的熱膨脹係數，所以基板與佳具 200305959
黏著性。 因為金屬核心之散執神龄 好，所以本發明之半導體;生【:匕單獨使用樹s 再者，在本發明之：以熱效能較佳。 醋塗覆之導引骨架金屬核；佳貫=[基由 -般樹醋基板之生產成心以嫩心當七 士制、生、六i , 取奉為低，因為一般樹酉丨 j : b “王以提供電子傳導路徑，所以本發^ :使用便宜的金屬導引骨架之金屬核心，可〇 〇 製造半導體裝置一般會考慮到一些特性， 規格中可以被標準<匕’例如：抗濕性、 板哥命。 ·'、、 本發明之優點係使用樹酯塗覆之金屬核心 發明之半導體裝置係可完全符合高標準之需求 少庫，及降低管理之費用，而且允許長時間使 為濕氣及高溫而毀壞裝置。 此外，本發明所提供之球閘陣列半導體封 樹酯塗覆之金屬核心基板，可以改進散熱处 性及降低成本。 【實施方式】 茲為使 貴審查委員對本發明之結構特徵 功效有更進一步之瞭解與認識，謹佐以較佳之 合詳細之說明，敘述如後： 如上所描述之習知BGA裝置具有一些缺點 之基板來的 使用一以樹 傳導電路比 基板需要增 之優點即在 降低製造成 這些特性在 性等級及基 基板，故本 ，不只是減 用而不會因 裝’具有一 、提高可靠 所達成之 施例及配 例如：複 200305959 五、發明說明（5) 數遮罩製程，部分製程步驟及原料使得這些裝置相當昂貴 ’而習知裝置之PCB基板存在不易散熱之問題，容易受到 溫度影響。 本發明所提供之球閘陣列半導體封裝，具有一樹酯覆 蓋之金屬核心基板，可以改進散熱效能、提高可靠度及降 低成本。 請參閱第2圖，其係為本發明之一較佳實施例之BGA結 構截面圖。 該BGA半導體裝置2〇〇包括一金屬核心210、樹酯基板 220、錫球230、黏著劑240、一半導體晶片25 0、導線260 及封裝體2 7 0。 ^ 金屬核心2 1 0係為一金屬導引骨架，係使用於習知之 半V體封t之導引骨架，該金屬核心2 1 〇係由一導電物質 如銅原料所製成，電路形成在金屬骨架上以傳送輸出/輸 入之電子#號’樹酯塗覆於金屬核心2 1 〇上以形成一金屬 核心之樹酯基板220結構。 在習知之使用金屬核心導引骨架之案例中，係在封裝 中將導引骨架加以整修或切割出想要的長度或徹底的移除 以便4金屬月架可以適用於封裝，但是本發明係使 用現成裝置之金屬導引骨架，因此更節省了製造成本。 妒F ^ f ί半V體晶片2 5 〇係利用一黏著劑2 4 0黏接於樹 :口曰ΐΚί核心基板220，需注意的是本實施例中雖然 固半導體晶片，然而在本發明之其他實施例中 ，可以使用複數個半導體晶片於相同之半導體封裝中
第9頁 200305959
五、發明說明（6) 複數個傳導裝置2 6 0以電性連接或接合於半導體晶片 250側邊之導電端與金眉核心以形成電路，該傳一展置 260可為一導線，需注意的是除了金屬核心210與導線26〇 或錫球2 3 0之接合區域外，樹酯係將金屬核心2 1 0之周圍完 全塗覆。 該傳導裝置2 6 0係以選擇性之電性連接於半導體裝置 200之導電端、接腳、半導體晶片250及該金屬核心210。
複數個錫球2 3 0係以〆電性連接至金屬核心21 0，錫球 230可由鉛、錫或其他導電物質製成，以作為半導體裝置 2 0 0之電極，使得輸入/輸出之電子信號可以在半導體晶片 250、印刷電路板、骨架、或其他與半導體裝置2〇〇以電性 連接之裝置間傳送。 膠態封裝體270是用來覆蓋在所需要的區域，如樹醋 塗覆之金屬核心基板210、傳導裝置260、黏著劑24〇及半 導體晶片250，該封裝體270主要係經由印刷或其他塗覆 方法所形成，目的是黏著固定並保護密封該半導體晶 250及樹S旨覆蓋之金屬核心基板210，包括所連接的導 260。又因為該基板係使用樹酯原料，基板與封装之 之黏性比一般金屬核心基板來的強。 間 習知之半導體裝置通常由不同成分所製造， 不同之物理性質，如不同之熱膨脹係 木 艾有夕種 ，電氣所散發之熱量會使得至半導體=用該裂置時 由於不同時間溫度的增加，使得不同 ^。 導致晶片之電性連接變冑’影響到樹，基板之導電：脹达
第10頁 200305959 五、發明說明（7) 些變動產生 重複受到這 體、晶片、 習知之 體自金屬導 引骨架結構 較強之黏著 膨脹係數也 此外， 的好，所以 再者， 架金屬核心 般樹S旨基板 造流程以提 用便宜的金 透過必 置要達到需 環境條件及 求之第一級 件下及加熱 顯然地 濕，1^，然而 I發明 政熱特性， 之機械應力會造成晶片與基板内部連接變形， 些應力時，會導致半導體裝置内部連接或封裝 導線及基板之毁損。 導引骨架之積體電路封裝因為應力而導致封裝 引骨架分離，然而本發明之覆蓋樹酯之金屬導 ，其中半導體裝置之封裝體對於樹酯材質具有 性，因為封裝體及樹酯係為相似的材質，並熱 相似，所以基板與封裝體之間的黏著性增強了 金屬核心之散熱性質比單獨使用樹酯之基板 本發明之半導體裝置之散熱效能較佳。 本發明之基板具有一習知之樹酯塗覆之導引 ，且基板使用該金屬核心當作導電路徑，比一 之生產成本為低，因一般樹醋基板 供：子傳導路徑，所以本發明之優‘:=; 屬導引骨架之金屬核心，可以降低製造成 須的測試可以確認抗濕性之等級，例如：一狀 求之第三級，其必須通過一星期暴露於外界= 加熱至攝氏220度時不會損壞；如果要達^ ’則必須承受暴露於無限長時間於而 至攝氏2 60度時不會損壞。 衣丨兄條 導體裝置必須盡可能的達到最高等級 ’許多習知之裝置只能夠達到需求之第三， 之優點係使用樹酯塗覆之金屬核心基改 以及具有卓越的封裝體與基板之黏著性
第11頁 200305959 五、發明說明（8) 符，需f之第一級，本裝置具有長的基板壽命，且允許裝 置可長時間操作而不會因為濕氣或高溫條件導致毀壞，可 以大大降低庫存及管理費用。 、、所以本發明所提供之球閘陣列半導體裝置，具有樹酯 塗覆之金屬核心基板，可以改進散熱效能、提高可靠性及 降低成本。 綜上所述，本發明實為一具有新穎性'進步性及可供 f業：：t ’應符合我國專利法所規定之專利申請要件盔 出發明專利申請1 ·局早曰賜准專利、 非用ΐ所述者’僅為本發明之一較佳實施例而已，並 本發明實施之範®，舉凡依本發明巾請專利ΐ ，均應包括於本發明之申請專利範圍内。 > 飾 【圖號簡單說明】 1 0 0封裝 1 〇 2半導體晶片 104輸入/輸出信號腳 I 0 6連接層 II 〇印刷電路板 111樹酯基板 112傳導電路 113傳導電路 11 4防銲漆
200305959 五、發明說明（9) 11 5 電路錫球面 (115b鎳層） (115c金層） 11 6晶片腳 1 2 0 錫球 1 3 0 高分子樹酯防銲漆 1 4 0 電線 1 5 0 封包 20 0 BGA半導體裝置 2 1 0 金屬核心 2 2 0 樹酯基板 2 3 0 錫球 240黏著劑 250半導體晶片 2 6 0 導線 2 7 0 封裝體
200305959
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Claims (1)

  1. 200305959
    六、申請專利範圍 1 · 一種使用樹酯塗覆於球閘陣列金屬核心之半導體封裝 ’其主要部分包括： 一金屬核心； 一樹酯選擇性塗覆於金屬核心所形成之樹酯塗覆之金 屬核心基板； 一至少一半導體晶片，以電性連接至樹知塗覆之金屬 核心基板； 一複數個傳導裝置，其係以電性連接至上述至少一半 導體晶片之導電端及金屬核心之部分區域； 一複數個導電球，以電性連接至金屬核心； 一封裝體，以覆蓋樹酯塗覆之金屬核心基板、至少一 半導體晶片及複數條導線。 2 ·如申請專利範圍第1項所述之半導體封裝，其中該金 屬核心係為習知之金屬導引骨架。 3 ·如申請專利範圍第1項所述之半導體封裝，其中該金 屬核心尚包含有： 複數條電路，於複數個傳導裝置、金屬核心及複數個 導電球之間形成電路布局。 4 ·如申請專利範圍第1項所述之半導體封裝，其中該傳 導裝置係為一導線。 '、 5 · —種使用樹_塗覆於球閘陣列金屬核心之半導體封 衣’其主要邹分包括： 一金屬核心； Μ知選擇性塗覆於金屬核心所形成之樹酯塗覆之金
    第15頁 200305959 六、申請專利範圍 屬核 一半導 板； 7 8 一複數 電端 一複數 其中 信號 導線 全塗 一封裝 體晶 如申請 屬核心 如申請 屬核心 複數條 導電 如申請 心基板； 體晶片，以電性連 條導線，其係以電 及金屬核心之部分 個錫球，以電性連 複數個錫球係作為 輸入及輸出之接頭 及複數個錫球以電 覆該金屬核心； 體’其係覆蓋樹@旨 片及複數條導線之 專利範圍第5項所 係為習知之金屬導 專利範圍第5項所 尚包含有·· 電路，在複數個傳 球之間形成一電路 專利範圍第5項所 VI置係為一導線 _種使 裝，其 一金屬 一樹酯 用樹酯塗覆於球閘 主要部分包括： 導引骨架； 選擇性塗覆於金屬 接至樹酯塗覆之金屬核心基 性連接至一半導體晶片之導 區域； 接至金屬核心之部分區域’ 球閘陣列半導體裝置之電子 ，且除了金屬核心與複數條 性連接之區域外，該樹酯完 塗覆之金屬核心基板、半導 上側部。 述之半導體封裝，其中該金 引骨架。 述之半導體封裝，其中該金 導裝置、金屬核心及複數個 布局。 述之半導體封裝，其中該傳 陣列金屬核心之半導體封 核心所形成之樹酯塗覆之金
    200305959 六、申請專利範圍 屬核心基板； 一半導體晶片，以電性連接至樹鲳塗覆金屬核心基板 10 一複數 及金 一複數 其中 子信 條導 完全 一封裝 體晶 如申請 屬核心 複數條 導電 條導線’ 屬核心之 個錫球， 複數個錫 號輸入及 線及複數 塗覆該金 體，其係 片及複數 專利範圍 尚包含有 電路，在 球之間形 連接至一半導體晶片之導電端 域； 連接至金屬核心之部分區域， 作為球閘陣列半導體裝置之電 接頭，且除了金屬核心與複數 以電性連接之區域外，該樹酯 酯塗覆之金屬核心基板、半導 之上側部。 所述之半導體封裝，其中該金 以電性 部分區 以電性 球其係 輸出之 個錫球 屬核心 覆蓋樹 條導線 第9項 複數個傳導裝置、金屬核心及複數個 成’電路布局。
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