TW200305356A - Pallet for transporting FPC substrate and method for mounting semiconductor chip on FPC substrate - Google Patents

Abstract

A transfer palette for FPC boards comprises a nonextensible support and a silicone elastomer overlapped on the support. The shearing modulus G' of the silicone elastomer measured by a dynamic viscoelasticity method at 10 Hz and at 20 DEG C while vibrating the silicone elastomer ranges from 5.0 x 10<SP>5</sp> Pa to 5.0 x 10<SP>6</sp> Pa.

Description

200305356 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a carrier for FPC substrates and a method for mounting semiconductor wafers on an FPC substrate, which are used when constructing semiconductor wafers on an FPC substrate. [Prior Art] FPC boards (Flexible Printed Circuit boards) are thin and flexible. Therefore, FPC substrates have played a very important role in recent years as a base material for circuits constituting small electronic devices. However, based on characteristics such as strength, flatness, and heat shrinkability, the FPC substrate cannot be the same as a paper phenolic substrate or a glass plate in terms of the structure of a semiconductor chip. After transferring the pallets made by Qian Yi and others, the FpC substrate was positioned and bonded with tape, and the stainless steel material was used as a reinforcing plate to construct the semiconductor wafer. Further, Japanese Patent Laid-Open No. 9-237995 discloses that an FPC substrate is temporarily fixed to a transfer pallet with an adhesive. The FPC substrate is positioned on the carrier pallet and then bonded with tape. It is a hand I mi — Shita, Sakai work industry, and the parent and secondary structure must repeat the operation, so the operation efficiency, and the residual adhesive after stripping the tape , Has a bad influence on quality. There is also a τ Feng discarding type, which is discarded after being peeled from the pallet body after use, which is not ideal in terms of economy and environment. Yu Li, in order to simplify the application and peeling of the tape, you can test the method of double-fing with the shoulders. It does not need to be peeled each time and can be used multiple times. 200305356

Residual glue of the adhesive will be generated on the FPC substrate, so the number of times will increase and the quality will be deteriorated. [Summary of the Invention] The thermal limit imposed during the sheet assembly cannot be greatly reduced. Even if a double-sided tape is used, the FPC substrate will be economical, and the object of the present invention is to provide good work efficiency and good environmental performance. A carrier plate for an FPC substrate, and a semiconductor wafer mounting method on an Fpc substrate. In order to achieve the above-mentioned object, the present invention adopts the constitution in the scope of patent application. [Embodiment] A first embodiment of the present invention will be described below with reference to Figs. 1 (a), (b), and 2. As shown in FIG. 1 (b), the 'conveying pallet 11' includes a non-stretchable support 12 as a reinforcing plate, and a silicone elastomer layer 13. The support body 12 in this embodiment is an aluminum plate. As shown in FIG. 1 (a) and FIG. 1 (b), the two first holes 14 for positioning the mounting portion 31 (see FIG. 2) of the mounting device are formed on the conveying pallet π, and the rectangular FPC is formed. The plurality of second holes ι6 for positioning the substrate 15 (as shown by the two-point chain line in FIG. 1 (a)). Each of the first holes 14 is formed at both end portions in the longitudinal direction of the transfer pallet 托, and penetrates the support 12 and the silicone elastomer layer 13. Each of the second holes 16 penetrates the support 12 and the silicone elastomer layer 13. In this implementation 200305356

The area of the holding plate 11 is, for example, the size of a person 15. One diagonal of the y FPC substrate 15 of the plurality of second holes 16 towels, #corresponds to the two corners of the sheet Fp | J moon green. The silicone rim elastomer constituting the silicone elastic medicament injection layer 13 is a silane-based epoxidizer. By cross-linking oxygen with oxygen, R 丨 si 丨 ΓΤ

Lithoxanthone elastomers include polydimethylsiloxanes in which R is a methyl group in the above formula; or at least a part of the methyl groups are at least other alkyl, vinyl, phenyl, and fluoroalkyl groups. Each kind of substituted polyorganosiloxane is composed alone or as a mixture of at least two kinds. The crosslinking method is not particularly limited, and a conventionally known method can be adopted. For example, a method of 'crosslinking a methyl group or a vinyl group of a polyorganosiloxane with a radical reaction. Another example is a method of cross-linking a polyorganosiloxane fired with silanol and a condensation reaction with a silane compound having a hydrolyzable functional group, and a cross-linking reaction by addition of a hydrosilyl group on a vinyl group. Method. Adhesion between the silicone elastomer layer 13 and the support 12 is a known method based on a general bonding method between a lithone elastomer layer and another material. In this embodiment, the support 12 is subjected to an appropriate undercoating treatment, and then an uncrosslinked silicone elastomer layer 13 is formed. The silicone elastomer 13 and the support 12 are vulcanized and bonded. 200305356 The shear elasticity ㈣G of wide elastomer I 13 was measured according to the dynamic viscoelasticity measurement method. Specifically, a test piece of the phase elastomer layer 13 at a temperature of 2 ° C was made to vibrate at a frequency of 10 Hz, thereby obtaining the shear elastic modulus G ′ of the silicone elastomer layer 13. The silicone elastomer layer The range of the shear elastic modulus of 13 is 5.0X105Pa ~ 5.0x106pa. If the shear elastic modulus 胄 G- is lower than 5.0x105pa, the silicone elastomer layer 13 is excessive due to the softening of the silicone elastomer Adhesion to the Fpc substrate 15 makes it difficult to remove the FPC substrate 15. On the other hand, when the shear modulus of elasticity 0 is higher than · 0 X 10 Pa, the elasticity of the stone slab I becomes too hard, and the stone slab The ketone elastomer layer 13 is not easily adhered to the FPC substrate 15 and makes the positioning of the Fpc substrate 15 difficult. By forming the shear elasticity G, the silicon_elastomer I 13 ′ located in the above range will be formed by Appropriate soft hardness is tightly adhered to the substrate 15. Shi Xi S is the same as the appropriate elastic modulus G of the elastomer layer 13, and the type, molecular weight, and reinforcing filler of polyorganic stone can be adjusted by appropriately adjusting Silicone elastomer composition and degree of cross-linking are obtained. During the semiconductor wafer fabrication process on the FPC substrate 15, the temperature may increase. The temperature rises to about 200 ~ 240. (:, Fear of stress * bu a ·. ^ The situation of the lead-free solder that dare to approach even rises to about 280 ° C. Therefore, the stone Xi Ke Ke strong M thief μ flat body layer 13 shear Cut the modulus of elasticity G, the value is preferably 'Even within these temperature ranges, it can also be in the range of 50 × 05pa ~ 50 × 106Pa., The population of the month using the above-mentioned transport pallet ii on the FPC substrate A method for mounting a semiconductor wafer. As shown in FIG. 2, a recessed portion is formed on the mounting portion 31 of the mounting device so as to correspond to the first hole 14 of the carrying pallet Π. The carrying pallet 200305356 The supporting body 11 of 11 is arranged on the placing portion 31 so that the supporting portion 12 faces the placing portion 31. Then, the first pin 33 penetrates the first hole 14 and is engaged with the corresponding recessed portion 32, so that the The transport pallet π is positioned and mounted on the mounting portion 31. The FPC board 15 is formed with a through hole at a position corresponding to the second hole 16

At 34 °, the second pin 35 penetrates the through-hole 34 and the second hole 16, thereby positioning the FPC substrate 15 on the transfer pallet 11 and fixing the FPC substrate 15 to the silicone elastomer layer 13. Secondly, a semiconductor wafer (not shown) is mounted on the FPC substrate 15 by a heat welding process. After that, the Fpc substrate 15 is removed from the transfer pallet 丨 丨 to complete the assembly process. The next Fpc substrate 15 is closely adhered to the transfer pallet n, and the same semiconductor wafer assembly process is repeated. When discarding the carrier pallet 11 after repeated use, the silicone elastomer layer 13 'is peeled from the support 12 and the support 12 and the silicone elastomer layer 13 are separated and discarded. (Examples and Comparative Examples) Examples and comparative examples are described below to explain the foregoing embodiment in more detail. Regarding each of the transfer pallets of Example 1 and Comparative Example 1, the support i 2 is formed of an aluminum plate having a thickness of 0.8 mm, and the silicone elastomer layer 13 is formed of a thickness of 200 // m, and is ready to be tested. sheet. The test piece was vibrated at a frequency of 10 Hz at a temperature of 200 ° C, and the shear modulus G of the silicone elastomer layer 13 of Example 1 and Comparative Example 1 was measured. The values are shown below. 200305356 Example G, [Pa] 1.5 X 106 Comparative Example 1 On each of the transfer pallets u of Example 1 and Comparative Example 1, a first hole 14 corresponding to the mounting portion 31 and a second second hole corresponding to the FPC substrate 15 are formed. Hole 16. Next, the Fpc substrate 15 is adhered to each of the predetermined positions of each of the transfer pallets U, and a heat fusion welding process is performed. As a result, in Example 11, the semiconductor wafer can be normally assembled without causing positional displacement. And the carrying pallet u can be reused. Further, in Comparative Example 1, the FPC substrate 15 floated from the silicone elastomer layer 13 during the heat-welding process, and a structural failure occurred. This embodiment has the following advantages. The transport pallet 11 composed of 1 3 is a laminated body of the support 12 and Shi Xi _ elastomer. Silicone elastomer layer 105 ~ 5.0 × 106Pa. Therefore, the shear modulus G of 13 is in the range of 5.0X. By using the adhesiveness of the silicone elastomer layer, the FPC substrate can be tightly adhered to the stone evening_elastomer layer 13 without using adhesive tape. In addition, since no adhesive tape is produced even if the Fpc substrate 15 is removed from the transfer pallet u without using adhesive tape, the work efficiency is high, and the semiconductor wafer on the FPC substrate 15 can be structured without preventing the product f from being lowered. When a semiconductor wafer is mounted on the FPC substrate 15, even if the heating and welding process becomes high temperature, since the silicone elastomer layer 13 is excellent in heat resistance, it is unlikely to be deteriorated. Therefore, the 'transfer pallet U can be reused and is economical. The silicone elastomer layer 13 is strongly bonded to the support 12. 200305356 Therefore, there is no risk of peeling during use. In addition, even if machining of the first hole 14 is performed, peeling does not occur at the machining end face. A second hole 16 corresponding to the FPC substrate 15 is formed in the transfer pallet 11. Therefore, by allowing the second pin 35 to pass through the through hole 34 and the second hole 16 in the FPC substrate 15, the FPC substrate 15 can be easily positioned at a predetermined position of the transfer pallet 11. A first hole 14 corresponding to the mounting portion 31 is formed in the transfer pallet 11. Therefore, by inserting the first pin 33 into the first hole 14, the transfer pallet 11 can be easily positioned at the predetermined position of the placement portion 31. Since the support 12 is made of an aluminum plate, the support 12 can be formed of a readily available material. Moreover, it is lighter and easier to handle than a stainless steel plate. Next, modifications of the embodiment of Figs. 1 (a), (b) and Fig. 2 will be described. In this embodiment, except for the shear elastic modulus G of the silicone elastomer layer 13, which ranges from 5.0xi05Pa to 5.0x106Pa, the difference from the previous embodiment lies in the silicone elastomer layer measured in accordance with JIS R 2618. The thermal conductivity of 13 is 0.4 W / m · K or more. The thermal conductivity measured by jis R 2618 is measured based on the temperature rise of the heating wire when a certain amount of power is applied to the heating wire placed in the test piece of the silicone elastomer layer 13. An appropriate thermal conductivity of the silicone elastomer layer 13 can be obtained, for example, by adding a thermally conductive filler to the silicone elastomer. If the thermal conductivity of the silicon-elastomer layer U is too low, a heating process such as a heat-welding process at the time of assembly may cause temperature variations in the carrier pallet 11. However, by setting the thermal conductivity of the silicone elastomer layer 13 to 0.4 W / m · K or more, the thermal conductivity can be improved, and the heating process during construction on the transfer pallet 12 200305356 11 is less prone to temperature variations. (Examples and Comparative Examples) Examples and comparative examples will be described below to explain this embodiment in more detail.

Each of the conveying pallets 11 of Example 2 and Comparative Example 2 is the same as that of Example 1 and Comparative Example 1 except that the physical properties of the hair-elastomer layer 13 are the same. In Example 2 and Comparative Example 2, the test piece of the silicone elastomer layer 13 was vibrated at a frequency of 10 Hz, and the shear elasticity of the silicone elastomer layer 13 was measured by dynamic viscoelasticity measurement at a temperature of 20 ° C. Modulus 0 ,. Ηs R

261 8 Determines the thermal conductivity of the silicone elastomer layer 13. Shear elasticity of the silicone elastomer layer 13, the raw modulus G, and the age coefficient of thermal conductivity 1 τ 〇 Shear elastic modulus G, [Pa] ^ factory w_ thermal conductivity coefficient [W / m · K] Example 2 2 .OX 1〇6 0.8 Comparative Example 2 1.0 × 107 0.3 Each of the carrying plates u of Example 2 and Comparative Example 2 has two i-th holes 14 and a plurality of second holes 16 similar to those of Example 1. The Fpc substrate 15 is brought into close contact with the silicon-elastomer layer i3 corresponding to the transfer pallet n, and a heat fusion welding process is performed. As a result, the transfer pallet 11 of Example 2 can normally mount a semiconductor wafer in the same manner as in Example 1, but Comparative Example 2 has a problem of poor assembly. In addition, compared with Comparative Example 2, in Example 2, it is less likely that a temperature difference occurs on the carrying pallet 11. This embodiment has the following advantages in addition to the advantages of the foregoing embodiment. 13 200305356 The shear elastic modulus G of the silicone elastomer layer i 3 ranges from 5 〇χ 105 Pa to 5.0 xi0々a, and the thermal conductivity of the silicone elastomer ㉟i3 t is 0.4 W / m · K or more, According to this structure, the silicone elastomer layer 3 has good thermal conductivity, and can prevent the heating unevenness of the carrier plate 1 during the heating process during construction. Next, another modified example of the embodiment of item 1 (a), (2) and Fig. 2 will be described. In this embodiment, except that the shear elastic modulus of the silicone elastomer layer 13 ^ is around 5.0X105Pa ~ 5.0x106Pa, the difference from the previous embodiment lies in the silicon measured according to JIS K 7194 The volume resistivity of the ketone elastomer layer 13 is 1.0 × 10 igQ · cm or less. In addition, according to the claw κ 7194 * probe method, four electrodes are arranged linearly on the test piece of the silicone elastomer layer 13. When a current flows between the two outer electrodes, it is generated by the two inner electrodes. Potential difference to calculate the volume resistivity of the silicone elastomer layer. An appropriate volume resistivity of the silicone elastomer layer 13 is obtained, for example, by adding a conductive filler to the syringone elastomer. If the volume resistivity of the lithone elastomer layer d is too high, it is easier for dust to adhere to the surface of the silicone elastomer layer 13, which is not good for the manufacturing process. However, by making the volume resistivity of the silicone elastomer layer 13 less than ι · 〇χ 1〇Ω · cm, the conductivity of the lithone elastomer layer 13 can be improved, and the adhesion of dust caused by static electricity can be prevented. . (Examples and Comparative Examples) Hereinafter, the present embodiment will be described in more detail with examples and comparative examples. 200305356 Shear modulus of elasticity G '[Pa] Volume resistivity [Ω · cm] Example 3 3.OX 1〇6 2.0 X 1〇3 Example 4 3.〇Χ 10〇 1 · 0χ 1〇8 Comparative example 3 1.0 × 1〇7 1 · 〇Χ ίο16 Each of the transfer pallets 1 丨 of Example 3, Example 4 and Comparative Example 3 is the same as Example 1 and Comparative Example 1 except for the physical properties of the silicone elastomer layer 13. . In Example 3, Example 4, and Comparative Example 3, the test piece of "Shi Xi g with elastomer layer 13" was vibrated at a frequency of 10 Hz, and the silicone elasticity was measured by dynamic viscoelasticity measurement at a temperature of 20 ° C. Shear elastic modulus G 'of the bulk layer 13. The volume resistivity of the silicone elastomer layer 13 was measured by a 4-probe method in accordance with JIS K 7194. The values of the shear elastic modulus and the volume resistivity of the silicone elastomer layer 13 are as follows. With respect to each of the transfer pallets ii of Example 3, Example 4, and Comparative Example 3, the FPC substrate 15 was made dense as in Example 1. Combined with the corresponding silicone elastomer layer 13 to perform a heat fusion welding process. As a result, the semiconductor wafers of Examples 3 and 4 can be used to form semiconductor wafers in the same manner as in Example 1. However, Comparative Example 3 has a defective structure. In addition, compared with Comparative Example 3, Example 3 ′ and Example 4 are less prone to adhere dust on the transport pallet u. This embodiment has the following advantages in addition to the advantages of the foregoing embodiment. The shear elastic modulus G of the silicone elastomer layer 1 3 ranges from 5.0 X 105 Pa to 5.0 X 106 Pa, and the volume resistivity of the Shi Xiyu elastomer layer 13 is 15 200305356 1.0 X 101. Ω · cm. According to this configuration, the silicon-elastomer layer 13 has good electrical conductivity, and can prevent the adhesion of dust due to static electricity. Hereinafter, a second embodiment of the present invention will be described with reference to Figs. 3 (a), (b) and Fig. 4. This embodiment is described with respect to the portions different from the embodiment of Figs. 10), (b) and Fig. 2. The same portions are given the same reference numerals, and detailed descriptions thereof are omitted.

As shown in FIG. 3 (b), the silicone elastomer layer 13 includes a first layer 13a laminated on the support 12 and a second layer 13b laminated on the support 12. The FPC board 15 is adhered to the second layer 13b. The silicone elastomers constituting the first and second layers 13a and 13b can be prepared by crosslinking a polyorganosiloxane having the above-mentioned silaneoxy skeleton. The test piece of the first layer 13a was vibrated at a frequency of 10 Hz, and the shear elastic modulus G of the i-th layer was determined by dynamic viscoelasticity measurement at a temperature of 20 C. The shear elastic modulus G of the i-th layer 13a ranges from 3.0 × 104 Pa to 5.0 × 106 Pa. Dynamic viscoelasticity measurement under the same conditions

The measured elasticity modulus G of the second layer 13b is in the range of 50 × 105Pa-5.00 × 106pa. The first 113a is closely adhered to the support 12, and the stone ketone is made. Elastomer 1: followed by support 12. Primer or adhesive is used on the solid body layer 13 and the support body 12 / page: the shear elastic modulus of the Γ layer 13a is 0, which is too low, that is, if the body's I 'sheet's operability changes, difference. On the other hand, the second and second shear: the elastic modulus IG, too high, that is, if the silicon class elastomer is too hard,… it is not easy to fit tightly on the support 12 ... due to the stress imposed on Zuo 16 200305356, or the first and second The formation of the aid holes 14 and 6 may cause peeling between the support 12 and the first layer i3a. The right elastic modulus G of the second layer i3b is too low. Since the second layer 13b is too close to the FPC substrate 15, it is difficult to remove the Fpc substrate. On the other hand, if the shear elastic modulus G of the second layer i3b is too high, the second layer Ubq is in close contact with the FPC substrate 15, making it difficult to position the substrate. By setting the shear elastic modulus G * of the i-th layer and the 13a and m to be in the above ranges, respectively, the layer 13a can be closely adhered to the support 12 'and the second layer 13b can be closely adhered to the Fpc. Substrate 15. The shear elastic modulus G of the first layer 13a is lower than the shear elastic modulus G of the third layer. For example, when the shear elastic modulus 0 of the first layer ... is higher than the shear elastic modulus G of the second layer m, the adhesion force of the m3a is weaker than that of the 13b. At this time, when the q &quot; pc substrate 15 is peeled off from the transfer tray ’, the azulone elastomer layer 13 may be peeled off from the support 12. However, when the f-cut elastic modulus G of the M 13a is lower than that of the second layer CU, the adhesion force of the first layer Ua becomes stronger than that of the second layer 13b. Therefore, when the FPC board 15 is peeled off from the transfer tray u, the cut-off prevention elastic layer 13 can be peeled from the support 12. The appropriate shear modulus G of the first and second layer heart coffee can be adjusted by appropriately adjusting the composition and crosslinking degree of the silicone elastomer such as the type, molecular weight, and reinforcing material of the polyorganic stone. obtain. In the semiconductor wafer assembly process on the FPC substrate 15, the temperature may rise to about 200 ~ 240t ', the most recent situation of non-sold solder, or even about 280 ° C. Therefore, the shear elastic modulus of the first and second layers l3a is 17 200305356. The physical properties such as the number G and the value are preferably, even if these temperatures are reached, it is still effective. Second, it is explained that the use of the above-mentioned transport pallet n Method for mounting semiconductor wafer on FPC substrate. x, the structure of the mounting portion 31 of the mounting apparatus shown in Fig. 4 is the same as that of Fig. 2. In this embodiment, the conveying pallet 11 is arranged on the placing section 3 in the same manner as in the embodiment of FIG. 2 (Examples and Comparative Examples). Each of the conveying pallets u of Example 5 and Comparative Example 4 supports it. The body 12 is an aluminum plate having a thickness of 0.8 mm. A test piece having an i-th layer 13a having a thickness of 0.1 mm was prepared, and a test piece having a second nb having a thickness of 0.2 mm was prepared. Each test piece was vibrated at a frequency of 10 Hz at a temperature of 2 CTC, and the shear elastic modulus G of the first and second layers na and 13b was measured by dynamic viscoelasticity measurement. The values of the property modulus of the first and second layers of Example 5 and Comparative Example 4 are shown below. Molecules of silicone elastomer layer G, [Pa 1 Example 5 1st layer 2nd layer ___ 3 ^ 0 &gt; ^ 106 ___ Comparative example 4 1st layer 6.0 X6〇6 2nd layer 106 '~~ ^ ~~ --- -The FPC substrate 15 corresponding to each of the conveying pallets u in Example 5 and Comparative Example 4 is adhered to a predetermined position, and a heat-dissolution welding process is performed. As a result, in Example 5, the semiconductor wafer can be normally assembled without causing positional displacement. In addition, the carrying pallet 11 can be reused. 18 200305356 After use, the silicone elastomer layer 13 can be peeled from the support 12 by hand. On the other hand, in Comparative Example 4, when the first hole 14 of the transfer pallet 1 is formed, the silicone elastomer layer 13 floats from the support 12. In addition, during the thermal fusion welding process, peeling occurs between the silicone elastomer layer 13 and the support 12, and a defective structure occurs. This embodiment has the following advantages. The transport pallet 11 is a laminated body composed of a support 12, an i-th layer Ua, and a second-layer nb. The shear elastic modulus G of the second layer 13b ranges from 5.0 × 105 Pa to 5_0X 106 Pa. According to this configuration, the FPC substrate 15 can be closely adhered to the transfer pallet 11 without using an adhesive tape by using the adhesiveness of the second layer nb. In addition, since no tape is used, even if the FPC board 15 is removed from the transfer pallet 11, no adhesive residue is generated. Therefore, the operation efficiency is good, and the semiconductor wafer on the FPC substrate 15 can be constructed without preventing the quality from decreasing. The shear elastic modulus G of the first layer 13a ranges from 3.0xi04pa to 5.0 × 105Pa. By using the adhesion force of the first layer 13a, the first layer 13a can be firmly adhered to the support 12 without using a primer or an adhesive for the silicone elastomer layer 13. In the use of the transfer pallet 11, the azulone elastomer layer j3 does not peel off from the support 12, and when the first hole 14 is processed, the processed end face does not peel off. In addition, since it is different from the structure using an adhesive or the like, the silicone elastomer layer 13 can be separated and discarded after being peeled from the support 12. The shear elastic modulus G 'of the first layer 13a is lower than the shear elastic modulus CT of the second layer 13b. Therefore, the adhesion force of the first layer 13 a to the support 12 is 200305356, which is stronger than that of the second layer 13 b to the FPC substrate 15. When the substrate 15 is to be peeled off the transfer pallet 1 丨, the silicone elastomer layer 丨 3 It does not peel from the support 12. When a semiconductor wafer is mounted on the FPC substrate 15, even if the heating and welding process becomes high temperature, since the silicone elastomer layer 13 is excellent in heat resistance, it is unlikely to be deteriorated. Therefore, the transfer pallet u can be reused and is economical. Next, a third embodiment of the present invention will be described with reference to FIGS. 5 and 6.

. 3 (a), (3), and (4) are different from each other in the embodiment, and detailed descriptions of the same parts are omitted. As shown in Figs. 5 and 6, the transfer pallet 25 includes a strip body 23 for temporary fixing on an FPC substrate (not shown), and a pallet body 24 in which the strip body 23 is closely adhered to the surface thereof. The band body 23 includes first and second layers 21 and 22 made of a silicone elastomer with different shear modulus &amp; Angkor and Level 2 21

Known additives can be added within the range of the required physical properties of this document. Additives can be listed. Examples include: pyrolytic oxygen cutting, settling oxygen powder, and other oxidized stones, diatom earth, carbon, and carbon. Black, oxide, zinc oxide, boron nitride, iron oxide, etc. The loss coefficient of the silicone elastomer, which is a combination of "polyorganic stone oxygen oxide" structure and cross-linked state: the collapse of the sexual body ... ^ Burned part of the methoxy :: and :: degrees. For example If you use the polyorganic stone siege U functional group instead of "Polyorganosiloxane, 20 200305356, reduce the knot of silicone elastomer, and get the proper loss coefficient tan 5 at a temperature of 20 ° C , Basket! @ + 讲 弟 1 The shear modulus G of layer 21 is 3 × 104 ~ 5.0 Father 105 ~ 8. Better rabbit $ (^ 1 八 4 Gui is 5.0X10 ~ 3.〇xl〇5pa If the shear modulus G 'is more fish-like than 5.0 × 104 Pa, and s ^ ra is low, the first layer 21 becomes too soft and the operation becomes difficult. In addition-if the shear modulus G, Higher than 3 〇xi〇5pa, the Uth will not easily adhere to the pallet body ^, before the semiconductor wafer fabrication process on the Fpc substrate. The first layer 21 may be peeled from the pallet body 24

from. The shear elastic modulus G was measured by dynamic viscoelasticity measurement under the same conditions as in the above embodiment. The range of the knowledge loss coefficient tan 5 of the first layer 21 is preferably ~ H. If the loss coefficient tanm15 is small, when #the first layer 21 is closely adhered to the pallet body 24 ', it will recover in a short time due to the deformation of the first layer 21 , And can not fully close. On the other hand, if the loss coefficient is greater than 0.6, the deformation during use increases, and it cannot withstand repeated use.

When a semiconductor wafer is mounted on an FPC substrate, it is heated to 280t when a lead-free solder is used. Therefore, the shear modulus of the first layer 21 &amp; I 巳, preferably at a temperature of 280 ° C, can also be 3 × χ4 ~ 5.〇χ 105Pa ', more preferably 5.0X104 ~ 3.〇xi〇5pa. Under the environment of a temperature of 20 ° C, the range of the shear elastic modulus G of the second layer 22 must be 5.0X105 ~ 5.0X106Pa. If the shear modulus G is lower than 5.0 × 105 Pa, the bonding force between the second layer 22 and the FPC substrate is too high, and it is difficult to remove the FPC substrate after the semiconductor wafer is assembled. On the other hand, if the number of shear elastic branches G 'is higher than 5.0 × 106 Pa, the connection between the second layer 22 and the FPC substrate 21 200305356 is insufficient, and the temporary fixing of the original FPC substrate becomes difficult. Similarly, the first layer 21 of the tooth has a shear elastic modulus G of the second layer 22 at a temperature of 280 ° C, and the range is preferably 5JX ι5 ~ 5〇χ 100pa, more preferably 5 · 〇χ105 ~ 3.〇xi〇6pa. The first and second layers 21 and 22 are each laminated in an uncrosslinked state, and then vulcanized. However, it is not necessary to adopt this method, as long as the f 2 layers 21 and 22 can be adhered in such a manner that the shear elastic modulus G of each layer 21 and 22 is within the above range, other methods can also be adopted.

The best range of 1 is 30e m to 200 m, and more preferably 50 / m to 100 am. For example, when the thickness of the i-th layer 2i is smaller than the thickness of the i-th layer 2i, a sufficient amount of deformation cannot be obtained when the i-th layer 2i is adhered. X, when the i-th layer 21 is thick and // m thick, the amount of deformation of the stress applied during the semiconductor wafer mounting process becomes too much A, and the precision of the structure vibration becomes low.

As shown in FIG. 6, the '帛 i layer 21 is closely attached to the top of the pallet body, and the upper surface of the second layer 22 is exposed on the surface. On the 22nd, it is not shown. FPC substrate, on the FPC substrate, a semiconductor (not shown) is mounted. The semiconductor wafer is mounted on the FPC. At this time, the FPC substrate is closed; the adhesive force of the second layer 22 is temporarily fixed above the transfer pallet. In addition, the figure shows that pin holes can be formed in the pallets in order to position the pallets in the conveying section of the mounting device. _ As long as the heat resistance of the pallet body 24 is preferably made of stainless steel or stainless steel. However, it is possible to use other materials as long as it has the required and strength of Fpc substrate reinforcement when constructing semiconductor wafers. 22 200305356 The pallet body 24 is provided with a recessed portion 28 having a depth approximately the same as the thickness of the belt body 23 and having a width capable of conforming to the ㈣23. For example, when: the plate body 24 is not formed with the recessed portion 28 and the belt body 23 is attached to the surface of the pallet body 24: 'the belt body 23 itself will form a convex portion on the conveying pallet 25 and placed on the belt body 23 In the above FPC substrate, a portion other than the portion to be bonded to the tape body 23 may generate a gap with the pallet body 24. Therefore, the pallet main body 24 will not be able to exert its function as a reinforcing material, and an offset of 0 will occur when the semiconductor wafer is assembled. Specifically, the gap χ between the thickness of the belt 23 and the depth of the recess 28 is preferably 0 m to 0 〇5With. When the gap χ is larger than 0.05 legs, and the case where the tape body 23 is bonded to the surface of the pallet body 24 without forming the recessed portion 28, the gap between the FPC substrate and the pallet body 24 becomes large, and a semiconductor wafer is assembled. Offset may occur. On the other hand, when the depth of the recess 28 is greater than the thickness of the belt 23, the distance X is preferably not more than 0.05 mm, and most preferably 0 mm. If the recess 28 is too deep with respect to the thickness of the belt 23, the FPC substrate must be bent when the Fpc substrate is attached to the belt door. Therefore, the constructed Fpc substrate may be shifted from the target position. As shown in the modified example of FIG. 7, the recessed portion 28 'of FIG. 6 is not formed on the surface of the pallet main body 24, and the band body 23 may be brought into close contact. If the belt body 23 is contained in the storage space separated by the protrusions 27 provided under the FPC substrate 26, the FPC substrate 26, and the pallet body 24, even the Fpc substrate 26 having the protrusions 27 can stably receive the belt body. 23. The offset can be reduced when the semiconductor wafer is assembled. 23 200305356 A method of constructing an FPC substrate and a semiconductor wafer (not shown) on the transfer pallet 25 will be described below. First, the first layer 21 of the belt body 23 is attached to the pallet main body 24, and the second layer 22 is, for example, placed side by side on the surface of the transport pallet 25. The FPC substrate is placed on the transfer pallet 25, and the FPC substrate is fixed by the adhesive force of the second layer, and a heat welding process is performed to mount the semiconductor wafer on the FPC substrate. By fixing the FPC substrate to the second layer 22, the semiconductor wafer can be mounted at a predetermined position without shifting.

In addition, peeling can be performed so that adhesive residue does not occur on the FPC substrate. In addition, the tape body 23 does not need to be peeled off, and can be reused more times than ordinary double-sided tapes. When it is finally deteriorated and needs to be peeled off, it does not cause residue of the adhesive on the pallet body 24. Glue while peeling by hand. Hereinafter, examples and comparative examples will be given to explain the above-mentioned embodiment in more detail. The values of the shear modulus G and the loss coefficient tan5 were measured using a spectrometer VHSF-m manufactured by Iwamoto Seisakusho Co., Ltd. at a temperature of 20 Hz and a frequency of 10 Hz. (Example 6)

First, a conveying pallet recessed portion 'having a depth of _03_ formed by partial cutting with a thickness of 12 mm is bonded to a belt body including the i-th and second layers through the i-th layer. In the first layer of Example 6, Sun Luodao + layer system cuts the polydimethylsiloxy group polymer port formed by introducing the phenylmethylsilyloxy unit r into the paternal union to generate 0.1 mm Layer, 筮 1 成 u # at a temperature of 20 ° Γ. The shear modulus G of the first layer under the degree c is 8. X 1 0 Pa, and the loss coefficient tan 5 is ο]. The second layer of Example 6 is a layer with a thickness of 0.2 mm, which is produced by cross-linking # Γρ by # system made by GE Toshiba Silicone Co., Ltd. $ 24 200305356 TSE2913-U. The shear modulus G of the second layer at a temperature of 200 ° C is i ° &lt; 106Pa. Next, a Fpc substrate is placed at a predetermined position on the transfer pallet, and a heating and welding process for constructing a semiconductor wafer is performed at a temperature of 240 ° C. The Fpc substrate does not cause a position shift, and the semiconductor wafer can be normally mounted on the Fpc substrate. There is no residue generated on the FPC substrate removed after the mounting. The belt body can be reused at least 30 times. After 30 times of use, it can be easily peeled from the pallet body by hand, and no residual glue is generated on the pallet body.

(Comparative Example 5) The i-th layer of Comparative Example 5 does not contain a phenylmethylphosphonium oxide element when the polymer of the polydimethylene sintered matrix is crosslinked, so its physical properties will produce the following Changes were otherwise evaluated in the same manner as in Example i. The thickness of the i-th layer of the fifth example is 0.1 mm, and the shear modulus G of the first layer at a temperature of 2 generations is 2.0 × 106 Pa, and the loss coefficient is 0 ″. . When the heat-dissolving welding process is performed, the belt body may be shifted on the supporting plate body, resulting in a defective structure.

This embodiment has the following advantages. J consists of the shear modulus G, the lower first layer, which can make the belt body 23 and

The plate body 24 is tightly adhered '. By shearing the elastic modulus G, the second highest 22, F to be fixed can be temporarily compared to the extent. Even if the heat resistance of the elastomer is high, even if the heating process is performed on the rhenium substrate, the semiconductor crystal can still be assembled in such a manner that the position of the semiconductor crystal is not shifted. 25 200305356 In addition, since the silicone elastomer is not easily degraded, it can be reused more times than ordinary tapes. When it is eventually degraded, it can be peeled off by hand without generating adhesive residue. The yoke shape is not limited to each embodiment, and can be modified as follows. As shown in FIG. 8, the convex portions 42 may be formed at positions corresponding to the second holes 6 to 6 on the FPC substrate 15 by a press forming method or the like. At this time, the FPC substrate 15 is positioned at a predetermined position of the transport pallet π by engaging the convex portion 42 with the corresponding second hole 16. FIG. 9 is a modified example of the embodiment of FIG. 8 in which the silicone elastomer layer 13 includes the first and second layers 13 a and 13 b. The convex portion 42 is formed on the FPC substrate 15, and is formed on the transfer pallet 11 The user of the engaging convex portion 42 is not limited to the second hole 16 and may be a concave portion. The depth of the recess is usually through the silicone elastomer layer and reaches the support 12. Of course, the depth can also reach the support 12. The structure for positioning the FPC substrate 15 at the predetermined position of the transfer pallet 11 is not limited to the engagement of only the second pin 35 or only the convex portion 42 of FIG. 8 and FIG. 9 with the second hole 16, and the first Both the two pins 35 and the convex portion 42 may be used. In this case, for example, one through hole 34 and one convex portion 42 are formed in the FPC board 15. In the embodiments of FIGS. 1 (a), (b), and FIG. 2, the thermal conductivity coefficient and volume resistivity of the silicone elastomer layer 13 can be in the above range, that is, the thermal conductivity coefficient is 0.4 W / m · K or more, and the volume resistivity is 1.0 × 1〇〗 gq · cm or less. Appropriate thermal conductivity and volume resistivity can be obtained by adding 26 200305356 high thermal conductivity filler and conductive filler to the silicone elastomer at the same time. In the modified examples of the embodiment of FIGS. 1 (a), (b), and FIG. 2, the thermal conductivity of the azulone elastomer layer 13 may be less than 0.4 W / m · K, but in order to prevent heating during construction, The temperature difference occurs on the conveying pallet 11, and it is preferable that the thermal conductivity is 0.4 W / m · K or more. In another modification of the embodiment of FIGS. 1 (a), (b), and FIG. 2, the volume resistivity of Shi Xi_elastomeric layer 13 may exceed 1 × 〇χ〇〇〇〇cm, but to prevent For dust adhesion caused by static electricity, the volume resistivity is preferably 1.0 X 1010Ω · cm or less. In each of the modified embodiments of FIGS. 1 (a) and (b) to FIG. 4, the physical properties such as the shear modulus G, the thermal conductivity, and the volume resistivity of the silicone elastomer layer 13 are not necessarily approximate. 200 ~ 24CTC, the latest situation of lead-free solder is still around 280 ° C. For example, if the temperature of the heat welding process and the like does not reach 200 ° C, the temperature at which the physical properties of the silicone elastomer layer 13 can be kept lower than 200 ° C may be used. In each of the embodiments shown in Figs. Ua) and (b) to Fig. 9, the semiconductor wafer manufacturing process of the FPC substrate 15, which is closely adhered to the transfer trays 11, 25 is not limited to the heating process. For example, it can also be a dip welding process (wave welding process) and so on. In each of the embodiments shown in FIGS. 1, and ⑷ to 4, when the FPC substrate 15 is positioned at a predetermined position of the transport pallet 丨 by the second pin 35, the second hole 16 is not limited to the formation of the transport pallet u. For example, a recess may be formed. The depth of the recessed portion passes through the silicone elastomer layer 13 and reaches the support 12 27 200305356 In each of the embodiments shown in FIGS. I (a) and (b) to FIG. 4, the transfer pallet n is not formed corresponding to the FPC substrate 15. The plurality of second holes 16 or recesses may also be used, but when formed, the FPC substrate 5 may be easily positioned at a predetermined position of the transfer pallet 11. In each of the embodiments shown in FIGS. 1 (a) and (b) to FIG. 4, the conveying plate u may not form the first hole 14 corresponding to the mounting portion 3 of the structural device, but the first hole 14 may be formed. In this case, the conveyance pallet n can be easily positioned at a predetermined position of the mounting portion 31 of the mounting apparatus.

(Ha), (b) to (4), the support 12 is not limited to an aluminum plate, for example, a metal plate such as a stainless steel plate, a magnesium alloy plate, an epoxy-impregnated glass fiber plate, or a polyester-impregnated glass fiber may be used. Plate and other plastic plates. In addition, as long as the mechanical strength, heat resistance, and smoothness are sufficient, the non-stretchable support M can also be made of other materials, such as the aforementioned metal plates such as non-recorded steel plates, and plastic plates such as epoxy-impregnated glass fiber plates. Suitable for. 1 (a) (b) to 9 in each embodiment, the silicone elastomer layer 13, the first and third of the tape body 23, -V, -V,

The method of adjusting the elastic modulus G of the two layers of Lehandi 21 and 22 to an appropriate value, for example, a plurality of commercially available silicon compounds can be blended at any ratio. The method of joining the '㈣ elastomer layer and the support 12 in each of the embodiments of FIGS. 1, 4, and 4 is not limited to vulcanization. For example, the bonded Shi Xiyu elastomer sheet is used with a shione compound. Then you can. In Fig. 13, 1⑷, ⑻ ~ Fig. 4, the ketone elastomer layer does not affect the shear modulus G of the present invention, and the thermal conductivity coefficient: 28 200305356 volume resistivity and other physical properties ___, Within the range, the conventional additives known as Week 4 & Feng Wu Ning, which have been conventionally added to the lithone ketone elastomer composition, can be added. Examples of the additives include oxygen cutting such as oxyhydrogenation, sedimentation quarrying, quartz powder, and the like, calcium arsenite, carbon black, aluminum oxide, magnesium oxide, zinc oxide, iron boron nitride, and the like. In each of the embodiments shown in FIGS. 1 (a) and (b) to FIG. 4, the FPC substrate 15 adhered to the transfer pallet 11 is not limited to six pieces, and the size of the transfer pallet u and the FPC substrate 15 can be appropriately changed in accordance with the sizes of the transfer pallet u and the FPC substrate 15. For example, when the transfer pallet Η is large, the number of Fpc substrates 15 that can be closely adhered to the transfer pallet u decreases. When the carrying pallet 11 is large, the number of FPC substrates 15 that can be adhered increases. The formation position of the second hole 16 can be appropriately changed to a position corresponding to Fp (: substrate 15. In each of the embodiments shown in FIGS. 1 (a) and (b) to FIG. 4, the formation position of the second hole μ ′ and It is not limited to the positions corresponding to the two corners on the diagonal line of one piece of FPC substrate 15, and appropriate changes can be made. The position where the first hole 14 is formed is not limited to the two ends in the long-side direction of the transfer pallet 11, but [A brief description of the drawings] (I) Part of the drawings FIG. 1 (a) is a top view of the conveying pallet of the first embodiment of the present embodiment. FIG. 1 (a) is a diagram along FIG. 1 (a) ) Is a cross-sectional view taken along the line lb-lb. Figure 2 is a cross-sectional view showing the function of the transfer pallet of Figure 1 (b). Figure 3 (a) is a top view of the transfer pallet of the second embodiment. 29 200305356 Figure 3 ( b) is a cross-sectional view taken along line 3b-3b of Fig. 3 (a). Fig. 4 is a cross-sectional view showing the effect of the carrying pallet of Fig. 3 (b). Fig. 5 is a perspective view of the carrying pallet of the third embodiment. Fig. 6 is a cross-sectional view taken along the line 6-6 in Fig. 5. Fig. 7 is a cross-sectional view of a carrying pallet according to a modification of the embodiment of Fig. 5. Fig. 8 is a partial cross-sectional view of a carrying pallet in another embodiment. Fig. 9 is a partial cross-sectional view of a transport pallet in another embodiment. (II) Symbols of components 1b 25 ... transport pallet 12 ... support 13 ... silicone elastomer layer 14 ... first hole 15 &gt; 26 ··· FPC substrate 16… 2nd hole 21 ··· 1st layer of band body 22 ·· 2nd layer of band body 23 &quot; · band body 24- pallet body 27 ″ · protrusion 28 ·· recess 31 ··· Mounting section 32-recessed section 33 "· 1st pin 34 ... through hole

30 200305356 35 ... 2nd pin 42 ... projection

31

Claims (1)

200305356 Scope of patent application: 1. A carrier for FPC substrates, which is characterized by: a non-stretchable support; and a silicone elastomer superimposed on the support at a temperature of 2 ( RC makes it the shear elastic modulus (T range is 5.0x105pa ~ 5.0X106Pa) measured by the dynamic viscoelasticity measurement method with a frequency of 10Hz. When a certain amount of power is applied to the heating wire placed in the test piece of the silicone elastomer, the thermal conductivity of the silicone elastomer measured based on the rising temperature of the heating wire is (K4W / m · K or more. 3. If applied The transfer pallet of item 1 or 2 of the patent scope, wherein the four electrodes are arranged linearly on the silicone elastomer, and when a current flows between the two outer electrodes, it is generated by the two inner electrodes. The volume resistivity of the silicone elastomer calculated from the potential difference is 1.0 or less; <10 (1) Ω · cm or less. 4. If the transfer pallet of item 1 or 2 of the patent application scope, the The carrier plate is provided with a recess for positioning the FPC substrate. 5. If the transfer pallet of item 1 or 2 of the scope of patent application is applied, the transfer pallet is placed on the mounting portion of the structural device, and the transfer pallet is provided with a position for positioning on the placement portion. 6. For the transfer pallet of item 1 or 2 of the scope of patent application, the support system is selected from stainless steel plate, aluminum plate, magnesium alloy plate, epoxy-impregnated glass fiberboard and polyester-impregnated glass fiberboard. 32 200305356 7. A method for mounting a semiconductor wafer on an FPC substrate, comprising: a preparation process for transporting a pallet, the transport pallet is provided with a non-stretchable support, and Fenghe Shattered elastic body on the support, the shattered ketone elastomer 'has a shear elastic modulus G determined by a dynamic viscoelasticity measurement method at a temperature of 20 ° C and a frequency of 10 nz, which ranges from 5.0 xl05Pa ~ 50xl06Pa; a process of closely bonding an FPC substrate to a silicone elastomer; and a process of constructing a semiconductor wafer on the FPC substrate. 8. A carrier pallet for an FPC substrate, which is characterized by: , Is a non-stretchable support, superimposed The first and second layers on the support and the second layer superimposed on the first layer; 忒 The first and second layers are lithone elastic system, which makes it vibrate at a frequency of 10Hz at a temperature of 20 ° c A dynamic viscoelasticity measurement method for the shear elastic modulus G 'of the first layer measured by the viscoelasticity method in the range of 3.0 X 104 Pa to 5.0 X 106 Pa at a temperature of 20 ° C and a frequency of 10 Hz. The measured shear elastic modulus G of the second layer ranges from 5e0x105Pa ~ 5.0x; 106pa09. For example, the transfer pallet of item 8 in the scope of patent application, wherein A concave portion for positioning the FPC substrate is formed on the transfer pallet. 10. If the transfer pallet of item 8 or 9 of the scope of patent application is applied, wherein the transfer pallet is placed on the mounting portion of the structural device, and the transfer pallet is formed to be positioned on the placement Department of holes. 11. If the transfer pallet of item 8 or 9 of the scope of patent application is applied, 33 200305356 'The support system is selected from stainless steel, aluminum, magnesium alloy, epoxy-impregnated glass fiberboard and polyester-impregnated glass fiberboard. Either. 12. A method for constructing a semiconductor wafer on an FPC substrate, comprising: a preparation process for transferring a carrier plate, the carrier plate having a non-stretchable support, and a first layer superposed on the support And the second layer superimposed on the first layer, the first layer and the second layer are lithone elastic system, measured by a dynamic viscoelasticity measurement method at a temperature of 20 ° C and a frequency of 10 Hz vibration The shear elastic modulus G of the first layer ranges from 3.0X 104 Pa to 5.0 X 106 Pa, and is measured by a dynamic viscoelasticity measurement method at a temperature of 20 ° C and a vibration frequency of 10 Hz. Shear modulus G of two layers, ranging from 50x105pa to 50x106Pa; the process of closely bonding the FPC substrate to the second layer; and after bonding, constructing a semiconductor wafer on the FPC substrate The process. 13. A tape body for temporary fixing, characterized in that it is a tape body for temporarily fixing an FPC substrate, and has a first working layer and a second layer of a lithoxone elastic system; The shear elastic modulus G of the first layer measured by the dynamic viscoelasticity measurement method with a frequency of 10 Hz, ranges from 3 × 104Pa to 5.0 × 105Pa. The perceptual coefficient of the layer ranges from 0.15 to 0.60; the shear elastic modulus g of the layer 2 measured by the dynamic viscoelasticity method with frequency-redundant vibration at 20C is in the range of 50 × 105Pa ~ 5.0X 106Pa. 34 200305356 14. The tape for temporary fixation such as the 13th in the scope of patent application, where 'the thickness of the first layer is in the range of 30mm &quot; m ~ 200A melon. 5 An FPC substrate is used for The transfer pallet is characterized by being provided with a temporary fixing belt body and a supporting plate body; the temporary fixing belt body is a belt body for temporarily fixing the Fpc substrate, and has a first layer and a first layer of a silicone elastic system. 2 layers; i-th as measured by dynamic viscoelasticity measurement at a temperature of 2 (rc to vibrate at a frequency of 10 Hz The shear elastic modulus G ranges from 3.0 × 104 Pa to 5.0 × 10 Pa, and the 4 loss coefficient (tan 5) of this layer ranges from 0.15 to 0. 60; at a temperature of 20 ° C, The shear elastic modulus G of the second layer measured by the dynamic viscoelasticity method with a frequency of 10 Hz is in a range of 5.0X 105Pa to 5.0.0x i0Pa; and the first layer is closely attached to the The surface of the pallet body. 1 6. The transport pallet according to item 15 of the patent application scope, wherein the pallet body has a recessed portion; The difference in thickness ranges from 0mm to 0e05mm. Pick up, round form: as next page 35