KR20040097170A - Transfer ㎩lette for FPC board and method for mounting semiconductor chip on FPC board - Google Patents

Abstract

The conveyance pallet for an FPC board | substrate contains a non-stretchable support body and a silicone elastomer. When the silicone elastomer was vibrated at a frequency of 10 Hz at a temperature of 20 ° C. and measured by dynamic viscoelasticity measuring method, the shear elastic modulus (G ′) of the silicone elastomer was 5.0 × 10 ⁵ Pa or more and 5.0 × 10 ⁶ Pa or less to be. The silicone elastomer is laminated on the support.

Description

Transfer chip for FPC board and method for mounting semiconductor chip on FPC board}

FPC boards (Flexible® Printed® Circuit boards) are thin and flexible. For this reason, the FPC board has played a central role as a substrate constituting a circuit of a small electronic device in recent years. However, FPC substrates cannot be handled in the same way as paper phenol substrates and glass epoxy substrates for mounting semiconductor chips due to characteristics such as strength, flatness, heat shrinkability, and the like. For this reason, the method of mounting a semiconductor chip is employ | adopted by positioning an FPC board | substrate on a conveyance pallet made of stainless steel materials, etc., and attaching it with an adhesive tape, and using a stainless steel material as a reinforcement board. In addition, Japanese Patent Laid-Open No. 9-237995 discloses temporarily fixing an FPC substrate on a conveyance pallet with an adhesive.

The operation of positioning the FPC substrate on the conveyance pallet and attaching it with an adhesive tape is manual and is repeated every time the operation is mounted. For this reason, work efficiency is bad. Moreover, the adhesive left after peeling off an adhesive tape is not preferable on quality. Moreover, since the adhesive tape is disposable and peeled off from the pallet body after use, it is economically and environmentally undesirable.

Here, in order to simplify the attaching and peeling off of the tape, a method of using a double-sided tape that can be used any number of times without having to peel off each time can be considered.

However, the adhesive force of the double-sided tape drops rapidly as the number of times of use increases. In addition, since the double-sided tape itself is also deteriorated by the heat applied when the semiconductor chip is mounted, the number of times that the double-sided tape can be reused is limited, and the number of tape attaching and peeling operations cannot be significantly reduced. In addition, the use of double-sided tape leaves adhesive on the FPC board. Therefore, the quality of an FPC board | substrate falls.

TECHNICAL FIELD This invention relates to the conveyance pallet for FPC board | substrates used for mounting a semiconductor chip in an FPC board | substrate, and the semiconductor chip mounting method to an FPC board | substrate.

1: A is a top view of the conveyance pallet in 1st Embodiment of this embodiment.

FIG. 1B is a cross-sectional view taken along the line 1b-1b of FIG. 1A.

FIG. 2 is a cross-sectional view showing the action of the conveyance pallet of FIG. 1B. FIG.

It is a top view of the conveyance pallet in 2nd Embodiment.

FIG. 3B is a cross-sectional view along the 3b-3b line of FIG. 3A.

4 is a cross-sectional view showing the action of the conveyance pallet of FIG. 3B.

It is a perspective view of the conveyance pallet in 3rd Embodiment.

FIG. 6 is a cross-sectional view taken along line 6-6 of FIG. 5.

FIG. 7 is a sectional view of a conveyance pallet in a modification of the embodiment of FIG. 5. FIG.

8 is a partial cross-sectional view of a conveyance pallet in another embodiment.

9 is a partial cross-sectional view of a conveyance pallet in another embodiment.

An object of the present invention is to provide a conveyance pallet for an FPC substrate and a semiconductor chip mounting method on an FPC substrate, which have good work efficiency, and are economically and environmentally preferable.

In order to achieve the above object, the present invention is in accordance with claim 1.

(The best mode for carrying out the invention)

EMBODIMENT OF THE INVENTION Hereinafter, 1st Embodiment which actualized this invention is described based on FIG. 1A, FIG. 1B, and FIG.

As shown in FIG. 1B, the conveying pallet 11 includes a non-elastic support 12 as a reinforcing plate and a silicone elastomer layer 13. In this embodiment, the support body 12 is an aluminum plate.

As shown in FIG. 1A and FIG. 1B, the conveyance pallet 11 has two 1st holes for positioning with respect to the mounting part 31 (refer FIG. 2) of a mounting apparatus. A plurality of second holes 16 for positioning with respect to the 14 and the rectangular FPC substrate 15 (shown by double-dotted lines in Fig. 1A) are formed. Each 1st hole 14 is formed in the longitudinal direction both ends of the conveyance pallet 11, and penetrates the support body 12 and the silicone elastomer layer 13, respectively. Each second hole 16 penetrates through the support 12 and the silicon elastomer layer 13. In this embodiment, the area of the conveyance pallet 11 is the area which can adhere 6 sheets of FPC board | substrates 15, for example. One pair of the plurality of second holes 16 corresponds to two corner portions on one diagonal line of one sheet of FPC substrate 15.

The silicone elastomer constituting the silicone elastomer layer 13 can be obtained by crosslinking a polyorganosiloxane having a siloxane skeleton as shown in the following formula.

Silicone elastomers include polydimethyl siloxane, in which all R are methyl groups, and a part of the methyl group is substituted with one or more of another alkyl group, vinyl group, phenyl group, or fluoroalkyl group. A polyorganosiloxane is used individually or in mixture of 2 or more types.

The crosslinking method is not particularly limited, and a conventionally known method can be applied. For example, the method of bridge | crosslinking the methyl group or vinyl group of polyorganosiloxane by a radical reaction is mentioned. Moreover, the method of crosslinking by condensation reaction of the polyorganosiloxane of a silanol terminal, and the silane compound which has a hydrolysable functional group, the method of crosslinking by addition reaction of the hydrosilyl group to a vinyl group, etc. are mentioned. .

The adhesion between the silicone elastomer layer 13 and the support 12 is generally in accordance with a known method which is carried out as a bonding method between the silicone elastomer layer and other materials. In the present embodiment, an appropriate primer treatment is applied to the support 12 to form an uncross-linked silicone elastomer layer 13. The silicone elastomer layer 13 and the support 12 are vulcanized.

The shear modulus G 'of the silicone elastomer layer 13 is measured by a dynamic viscoelasticity measuring method. Specifically, the shear modulus G 'of the silicone elastomer layer 13 is obtained by vibrating the sample piece of the silicone elastomer layer 13 at a frequency of 20 ° C. The range of shear modulus (G ') of the silicone elastomer layer 13 is 5.0 * 10 <^5> Pa or more and 5.0 * 10 <^6> Pa or less.

When the shear modulus G 'is lower than 5.0 × 10 ⁵ Pa, the silicone elastomer is soft, so that the silicone elastomer layer 13 is in close contact with the FPC substrate 15, which makes it difficult to remove the FPC substrate 15. On the other hand, when the shear modulus G 'is higher than 5.0 × 10 ⁶ GPa, the silicone elastomer is too hard, so that the silicone elastomer layer 13 is hardly adhered to the FPC substrate 15, and the positioning of the FPC substrate 15 is difficult. It becomes difficult. By forming the silicon elastomer layer 13 so that the shear modulus G 'is within the above range, the silicon elastomer layer 13 is in close contact with the FPC substrate 15 at an appropriate hardness. Appropriate shear modulus G 'of the silicone elastomer layer 13 can be obtained by appropriately adjusting the composition and crosslinking degree of the silicone elastomer such as polyorganosiloxane type, molecular weight, reinforcing filler, and the like.

In the mounting process of the semiconductor chip to the FPC board | substrate 15, temperature may rise to about 280 degreeC in the case of about 200 degreeC to 240 degreeC and the recent lead-free solder. For this reason, it is preferable that the value of the shear modulus G 'of the silicone elastomer layer 13 is 5.0 * 10 <^5> Pa or more and 5.0 * 10 <^6> Pa or less also in these temperature ranges.

Next, the semiconductor chip mounting method to the FPC board | substrate 15 using the conveyance pallet 11 of such a structure is demonstrated.

As shown in FIG. 2, the mounting part 31 of the mounting apparatus is provided with the recessed part 32 so that the 1st hole 14 of the conveyance pallet 11 may correspond. The conveyance pallet 11 is arrange | positioned on the mounting part 31 so that the support body 12 of the conveyance pallet 11 may face the mounting part 31 mutually. Next, the conveyance pallet 11 is positioned and attached to the mounting part 31 by engaging the first pin 33 through the first hole 14 and engaging the corresponding recess 32.

The through hole 34 is formed in the FPC board 15 at a position corresponding to the second hole 16. By passing the second pin 35 through the through hole 34 and the second hole 16, the FPC substrate 15 is positioned on the conveyance pallet 11, and the FPC substrate 15 is placed on a silicon elastomer layer ( 13).

Next, a semiconductor chip (not shown) is mounted on the FPC board 15 by a heat reflow soldering process. Thereafter, the FPC board 15 is removed from the transport pallet 11 to complete the mounting step. The following FPC board 15 is brought into close contact with the conveyance pallet 11, and the mounting process of the semiconductor chip is similarly repeated. When discarding the conveyance pallet 11 used repeatedly, the silicone elastomer layer 13 is peeled off from the support body 12, and the support body 12 and the silicone elastomer layer 13 are separated and discarded.

(Examples and Comparative Examples)

Hereinafter, the said embodiment is described in more detail, for an Example and a comparative example.

In each conveyance pallet 11 of Example 1 and the comparative example 1, the support body 12 was formed from the aluminum plate of thickness 0.8mm, and the silicone elastomer layer 13 prepared the sample piece formed in thickness of 200 micrometers. . The value of the shear modulus (G ') of each of the silicone elastomer layers 13 of Example 1 and Comparative Example 1 measured by vibrating the sample piece at a frequency of 10 Hz at a temperature of 20 ° C is a value shown below.

Shear modulus (G ') [㎩] Example 1 1.5 × 10 ⁶ Comparative Example 1 1.0 × 10 ⁷

In each conveyance pallet 11 of Example 1 and the comparative example 1, the 1st hole 14 corresponding to the mounting part 31 and the 2nd hole 16 corresponding to the FPC board 15 were formed, respectively. Next, the FPC board | substrate 15 was closely contacted to the predetermined position of each conveyance pallet 11, and the heat reflow soldering process was performed.

As a result, in Example 1, the semiconductor chip was able to be mounted normally without misalignment. In addition, the conveyance pallet 11 was able to be used repeatedly. In addition, in the comparative example 1, the FPC board | substrate 15 floated from the silicon elastomer layer 13 in the heat reflow soldering process, and mounting failure generate | occur | produced.

This embodiment has the following advantages.

The conveyance pallet 11 is a laminated body of the support body 12 and the silicone elastomer layer 13. The range of shear modulus (G ') of the silicone elastomer layer 13 is 5.0 * 10 <^5> Pa or more and 5.0 * 10 <^6> Pa or less. Therefore, by using the adhesive of the silicone elastomer, the FPC substrate 15 can be brought into close contact with the silicone elastomer layer 13 without the adhesive tape. In addition, since no adhesive tape is used, no adhesive substance remains even when the FPC board 15 is removed from the transport pallet 11. Therefore, the semiconductor chip can be mounted on the FPC board 15 with good work efficiency and preventing quality deterioration.

Even when the semiconductor chip is mounted on the FPC substrate 15 at a high temperature by a heat reflow soldering step or the like, the silicon elastomer layer 13 is excellent in heat resistance and therefore hardly deteriorates. For this reason, the conveyance pallet 11 can be used repeatedly and it is economical.

The silicone elastomer layer 13 and the support 12 are strongly adhered. For this reason, there is no possibility of peeling during use. Moreover, even if the 1st hole 14 is processed, peeling does not arise in a process cross section.

The conveyance pallet 11 is provided with the 2nd hole 16 corresponding to the FPC board 15. Therefore, the FPC board 15 is easily moved to the predetermined position of the conveying pallet 11 by passing the second pin 35 through the through hole 34 formed in the FPC board 15 and the second hole 16. Can be positioned.

The conveyance pallet 11 is provided with the 1st hole 14 corresponding to the mounting part 31. As shown in FIG. Therefore, the conveyance pallet 11 can be easily positioned in the predetermined position of the mounting part 31 by inserting the 1st pin 33 into the 1st hole 14. As shown in FIG.

Since the support body 12 is an aluminum plate, the support body 12 can be formed from the material which is easy to obtain. In addition, it is lighter and easier to handle than stainless steel plates and the like.

Next, a change example of the embodiment of FIGS. 1A, 1B, and 2 will be described. In this embodiment, in addition to the range of the shear modulus (G ') of the silicone elastomer layer 13 being 5.0 * 10 <^5> Pa-5.0 * 10 <^6> Pa, the silicone elastomer layer 13 measured based on JISR2618. ) Has a thermal conductivity of 0.4 W / m · K or more different from the above embodiment. In addition, the thermal conductivity based on JIS R 2618 is measured based on the temperature rise of the heating wire when a certain electric power is applied to the heating wire which existed in the sample piece of the silicone elastomer layer 13.

Suitable thermal conductivity of the silicone elastomer layer 13 can be obtained, for example, by adding a high thermal conductivity filler to the silicone elastomer. When the thermal conductivity of the silicone elastomer layer 13 is too low, there exists a possibility that a temperature gradient may generate | occur | produce on the conveyance pallet 11 in heating processes, such as the heating reflow soldering process at the time of mounting. However, by setting the thermal conductivity of the silicone elastomer layer 13 to 0.4 W / m · K or more, the thermal conductivity becomes good, and a temperature gradient hardly occurs on the conveyance pallet 11 in the heating step at the time of mounting.

(Examples and Comparative Examples)

Hereinafter, an Example and a comparative example are given and this embodiment is demonstrated in more detail.

Each conveyance pallet 11 of Example 2, the comparative example 2, and the comparative example 3 is the same as that of Example 1 and the comparative example 1 except having the physical-property value of the silicone elastomer layer 13. In Example 2, Comparative Example 2, and Comparative Example 3, the sample pieces of the silicone elastomer layer 13 were vibrated at a frequency of 10 Hz, and the silicon elastomer layer 13 was subjected to dynamic viscoelasticity measurement under the condition of a temperature of 20 ° C. Shear modulus (G ') was measured. In addition, the thermal conductivity of the silicone elastomer layer 13 was measured in accordance with JIS R 2618. The shear modulus G 'and the thermal conductivity of the silicone elastomer layer 13 are the following values, respectively.

Shear Modulus (G ') [㎩] Thermal Conductivity [W / mK] Example 2 2.0 × 10 ⁶ 0.8 Comparative Example 2 1.0 × 10 ⁷ 0.3

In each conveyance pallet 11 of Example 2 and the comparative example 2, two 1st holes 14 and the some 2nd hole 16 are formed similarly to Example 1. FIG. The FPC board 15 was brought into close contact with the silicone elastomer layer 13 of the corresponding transport pallet 11, and a heat reflow soldering step was performed. As a result, the conveyance pallet 11 of Example 2 was able to mount a semiconductor chip normally similarly to Example 1, and the mounting failure generate | occur | produced in the comparative example 2. As shown in FIG. In addition, in Example 2, a temperature gradient was less likely to occur on the conveyance pallet 11 than in Comparative Example 2.

This embodiment has the following advantages in addition to the advantages of the above embodiments.

The range of shear modulus (G ') of the silicone elastomer layer 13 is 5.0 * 10 <^5> Pa-5.0 * 10 <^6> Pa, and the thermal conductivity of the silicone elastomer layer 13 is 0.4 W / m * K or more. By this structure, the thermal conductivity of the silicone elastomer layer 13 becomes favorable, and it can prevent that a temperature gradient generate | occur | produces on the conveyance pallet 11 in the heating process at the time of mounting.

Next, another modified example of the embodiment of FIG. 1A, FIG. 1B, and FIG. 2 is demonstrated. In the present embodiment, the shear modulus (G ′) of the silicone elastomer layer is in the range of 5.0 × 10 ⁵ Pa to 5.0 × 10 ⁶ Pa, and is in accordance with JIS K 7194 by the four probe method (4-probe method). The volume resistivity of the measured silicone elastomer layer 13 is 1.0 × 10 ¹⁰ Pa · cm or less, which is different from the above embodiment. In addition, the four probe method based on JISK7194 means that four electrodes are arrange | positioned linearly on the sample piece of the silicone elastomer layer 13, and when an electric current flows between two outer electrodes, between two inner electrodes. It is a method of calculating the volume resistivity of the silicon elastomer layer 13 based on the potential difference which arises.

The appropriate volume resistivity of the silicon elastomer layer 13 can be obtained, for example, by adding a conductive filler to the silicon elastomer. If the volume resistivity of the silicone elastomer layer 13 is too high, dust may easily adhere to the surface of the silicone elastomer layer 13, which is not preferable in the manufacturing process. However, by configuring so that the volume resistivity of the silicone elastomer layer 13 is 1.0 * 10 <^10> Pa * cm or less, electroconductivity of the silicone elastomer layer 13 becomes favorable and adhesion of the dust by static electricity is prevented.

(Examples and Comparative Examples)

Hereinafter, an Example and a comparative example are given and this embodiment is demonstrated in more detail.

In each conveyance pallet 11 of Example 3, Example 4, and the comparative example 3, it is the same as that of Example 1 and the comparative example 1 except the physical-property value of the silicone elastomer layer 13. In Example 3, Example 4, and the comparative example 3, the sample piece of the silicone elastomer layer 13 was vibrated at the frequency of 10 Hz, and the dynamic-elastic-elasticity measurement of the silicone elastomer layer 13 was carried out under the conditions of 20 degreeC temperature. Shear modulus (G ') was measured. Moreover, the volume resistivity of the silicone elastomer layer 13 was measured by the four probe method based on JISK7194. The shear modulus G 'and the volume resistivity of the silicon elastomer layer 13 are the following values, respectively.

Shear Modulus (G ') [㎩] Volume resistivity [Ω · cm] Example 3 3.0 × 10 ⁶ 2.0 × 10 ³ Example 4 3.0 × 10 ⁶ 1.0 × 10 ⁸ Comparative Example 3 1.0 × 10 ⁷ 1.0 × 10 ¹⁶

Also about each conveyance pallet 11 of Example 3, Example 4, and the comparative example 3, similarly to Example 1, the FPC board | substrate 15 is stuck to the corresponding silicone elastomer layer 13, and a heat reflow soldering process is performed. Was carried out. As a result, the conveyance pallet 11 of Example 3 and Example 4 can mount a semiconductor chip normally similarly to Example 1, and the mounting failure generate | occur | produced in the comparative example 3. As shown in FIG. In addition, in Example 3 and Example 4, dust was less likely to adhere to Comparative Example 3.

This embodiment has the following advantages in addition to the advantages of the above embodiments.

The range of the shear modulus (G ') of the silicone elastomer layer 13 is 5.0 * 10 <^5> Pa-5.0 * 10 <^6> Pa, and the volume resistivity of the silicone elastomer layer 13 is 1.0 * 10 <^10> Pa * cm or less. By such a structure, the conductivity of the silicone elastomer layer 13 becomes good, and adhesion of dust by static electricity can be prevented.

EMBODIMENT OF THE INVENTION Hereinafter, 2nd Embodiment of this invention is described based on FIG. 3A, FIG. 3B, and FIG. In this embodiment, the description will be mainly focused on different parts from the embodiment of FIGS. 1A, 1B, and 2, and the same reference numerals will be given to the same parts, and detailed description thereof will be omitted.

As shown in FIG. 3B, the silicone elastomer layer 13 includes a first layer 13a laminated on the support 12 and a second layer 13b stacked thereon. The FPC substrate 15 is in close contact with the second layer 13b.

The silicone elastomer which comprises the 1st and 2nd layer 13a, 13b can be obtained by bridge | crosslinking the polyorganosiloxane which has the siloxane skeleton mentioned above.

The sample piece of the first layer 13a is vibrated at a frequency of 10 Hz, and the shear modulus G 'of the first layer 13a is measured by dynamic viscoelasticity measurement under the condition of a temperature of 20 ° C. The range of shear modulus (G ') of the 1st layer 13a is 3.0 * 10 <^4> Pa or more and 5.0 * 10 <^6> Pa or less. The range of the shear modulus (G ') of the 2nd layer 13b measured by dynamic viscoelasticity measurement under the same conditions is 5.0 * 10 <^5> Pa or more and 5.0 * 10 <^6> Pa or less.

The silicone elastomer layer 13 is adhered to the support 12 by bringing the first layer 13a into close contact with the support 12. In addition, a primer, an adhesive agent, or the like is not used between the silicone elastomer layer 13 and the support 12.

If the shear modulus G 'of the first layer 13a is too low, that is, the silicone elastomer is too soft, the handleability of the sheet is deteriorated. On the other hand, when the shear modulus G 'of the first layer 13a is too high, that is, when the silicone elastomer is too hard, the first layer 13a becomes difficult to adhere to the support 12. In addition, the stress applied during the work or the formation of the first and second holes 14 and 16 may cause peeling between the support 12 and the first layer 13a.

If the shear modulus G 'of the second layer 13b is too low, the second layer 13b will be in close contact with the FPC substrate 15, so that the removal of the FPC substrate 15 becomes difficult. On the other hand, when the shear modulus G 'of the second layer 13b is too high, the second layer 13b is hardly adhered to the FPC substrate 15, and the positioning of the FPC substrate becomes difficult. The range of the shear modulus G 'of each of the first and second layers 13a and 13b is within the above range, whereby the first layer 13a is further applied to the support 12 and the second layer ( 13b) is in good contact with the FPC substrate 15, respectively.

The shear modulus G 'of the first layer 13a is lower than the shear modulus G' of the second layer 13b. For example, when the shear modulus G 'of the first layer 13a is higher than that of the second layer 13b, the adhesion of the first layer 13a is weaker than that of the second layer 13b. In this case, when peeling off the FPC board | substrate 15 from the conveyance pallet 11, there exists a possibility that the silicone elastomer layer 13 may peel from the support body 12. As shown in FIG. However, if the shear modulus G 'of the first layer 13a is lower than that of the second layer 13b, the adhesion of the first layer 13a can be made stronger than that of the second layer 13b. For this reason, when peeling off the FPC board | substrate 15 from the conveyance pallet 11, peeling of the silicone elastomer layer 13 from the support body 12 can be prevented.

The shear modulus G 'of the suitable first and second layers 13a and 13b can be obtained by appropriately adjusting the composition and crosslinking degree of the silicone elastomer such as the polyorganosiloxane type, molecular weight, reinforcing filler, and the like.

In the mounting process of the semiconductor chip to the FPC board | substrate 15, temperature may rise to about 200 degreeC-240 degreeC, and the recent lead-free solder to about 280 degreeC. For this reason, it is preferable that the physical property values, such as a shear modulus (G '), are effective to these temperatures for the 1st and 2nd layer 13a, 13b.

Next, the semiconductor chip mounting method to the FPC board | substrate 15 using the conveyance pallet 11 of such a structure is demonstrated. In addition, the structure of the mounting part 31 of the mounting apparatus shown in FIG. 4 is the same as that of FIG. Also in this embodiment, the conveyance pallet 11 is arrange | positioned on the mounting part 31 similarly to embodiment of FIG.

(Examples and Comparative Examples)

Hereinafter, this embodiment is demonstrated in more detail, for an Example and a comparative example.

In each conveyance pallet 11 of Example 5 and the comparative example 4, the support body 12 is formed with the aluminum plate of thickness 0.8mm, the thickness of the 1st layer 13a is 0.1 mm, and the 2nd layer 13b is The sample piece formed into 0.2 mm of thickness is prepared. The shear modulus G 'of the first and second layers 13a and 13b was measured by dynamic viscoelasticity measurement which vibrated each sample piece at a frequency of 10 Hz under the condition of a temperature of 20 ° C. The shear modulus of the first layer and the second layer of Example 5 and Comparative Example 4 is the following value.

Silicone elastomer layer Shear Modulus (G ') [㎩] Example 5 First layer 8.3 × 10 ⁴ Second layer 3.0 × 10 ⁶ Comparative Example 4 First layer 6.0 × 10 ⁶ Second layer 3.0 × 10 ⁶

The FPC board | substrate 15 corresponding to the predetermined | prescribed position of each conveyance pallet 11 of Example 5 and the comparative example 4 was closely contacted, and the heat reflow soldering process was implemented.

As a result, in Example 5, the semiconductor chip could be mounted normally without dislocation. In addition, the conveyance pallet 11 of Example 5 was able to be used repeatedly. Furthermore, after use, the silicone elastomer layer 13 could be peeled off from the support 12 by hand.

On the other hand, in the comparative example 4, the silicone elastomer layer 13 floated from the support body 12 at the time of forming the 1st hole 14 of the conveyance pallet 11. As shown in FIG. In addition, in the heat reflow soldering step, peeling occurred between the silicone elastomer layer 13 and the support 12, resulting in mounting failure.

This embodiment has the following advantages.

The conveyance pallet 11 is a laminated body of the support body 12, the 1st layer 13a, and the 2nd layer 13b. The range of the shear modulus G 'of the second layer 13b is 5.0 × 10 ⁵ Pa or more and 5.0 × 10 ⁶ Pa or less. By such a structure, the FPC board | substrate 15 can be adhered on the conveyance pallet 11 without an adhesive tape using the adhesiveness of the 2nd layer 13b. In addition, since no adhesive tape is used, no adhesive substance remains even when the FPC board 15 is removed from the conveyance pallet 11. Therefore, the semiconductor chip can be mounted on the FPC board 15 with good work efficiency and preventing quality deterioration.

The range of shear modulus (G ') of the 1st layer 13a is 3.0 * 10 <^4> Pa or more and 5.0 * 10 <^6> Pa or less. By the adhesive force of the 1st layer 13a, the 1st layer 13a can be adhere | attached strongly to the support body 12, without using a silicone elastomer layer 13 using a primer, an adhesive agent, etc. Moreover, there is no possibility that the silicone elastomer layer 13 will peel from the support body 12 during use of the conveyance pallet 11, and even if the 1st hole 14 is processed, peeling will not arise in a process cross section. Moreover, since it differs from the structure which adhere | attaches with an adhesive agent etc., the silicone elastomer layer 13 can be peeled off from the support body 12, and can be separated and discarded.

The shear modulus G 'of the first layer 13a is lower than the shear modulus G' of the second layer 13b. For this reason, the force which the 1st layer 13a adheres to the support body 12 becomes stronger than the force which the 2nd layer 13b adheres to the FPC board | substrate 15, and conveys the FPC board 15 to the conveyance pallet 11 There is no fear that the silicone elastomer layer 13 may come off from the support 12 when peeled off.

Even when the semiconductor chip is mounted on the FPC substrate 15 at a high temperature by a heat reflow soldering step or the like, the silicon elastomer layer 13 is excellent in heat resistance, and therefore, it is difficult to deteriorate. For this reason, the conveyance pallet 11 can be used repeatedly and is economical.

Next, a third embodiment of the present invention will be described with reference to FIGS. 5 and 6. In addition, it demonstrates centering around a different part from embodiment of FIG. 3A, FIG. 3B, and FIG. 4, The description of the same part abbreviate | omits the description.

As shown in FIG. 5 and FIG. 6, the conveyance pallet 25 includes a tape 23 for temporarily fixing to an FPC substrate (not shown) and a pallet body 24 in which the tape 23 is in close contact with the surface thereof. Include. The tape 23 includes first and second layers 21 and 22 made of silicone elastomer, each having a different shear modulus G '.

The well-known additive may be added to the silicone elastomer contained in the 1st and 2nd layers 21 and 22 in the range which does not impair the physical property required for this invention. As the additive, in addition to silicon oxide such as fumed silica, sedimentary silica and quartz powder, diatomaceous earth, calcium carbonate, carbon black, alumina, magnesium oxide, zinc oxide, boron nitride, iron oxide and the like can be mentioned. .

The loss coefficient tan δ of the silicone elastomer is a physical property value affected by the molecular structure and crosslinking state of the polyorganosiloxane, which is a material of the silicone elastomer, and shows flexibility. The raw material and the degree of crosslinking are adjusted to obtain a silicone elastomer exhibiting an appropriate loss factor tan δ. For example, when polyorganosiloxane in which a part of the methyl group of polydimethylsiloxane is substituted with another functional group is used, the crystallinity of the silicone elastomer according to it is reduced, and the appropriate loss coefficient tan-delta can be obtained.

At a temperature of 20 ° C., the shear modulus G ′ of the first layer 21 is 3.0 × 10 ⁴ or more and 5.0 × 10 ⁵ Pa or less. Preferably, they are 5.0 * 10 <^4> or more and 3.0 * 10 <^5> Pa or less. If the shear modulus G 'is lower than 5.0 × 10 ⁴ Pa, the first layer 21 becomes too soft and difficult to handle. On the other hand, when the shear modulus G 'is higher than 3.0 × 10 ⁵ Pa, the first layer 21 becomes difficult to adhere to the pallet main body 24, so that the first layer (before the step of mounting the semiconductor chip on the FPC substrate) 21 may be peeled off from the pallet body 24. The shear modulus G 'is measured by dynamic viscoelasticity measurement under the same conditions as in the above-described embodiment.

It is preferable that the range of the loss coefficient tan-delta of the 1st layer 21 is 0.15 or more and 0.60 or less. For example, if the loss coefficient tan δ is less than 0.15, when the first layer 21 is brought into close contact with the pallet main body 24, the deformation of the first layer 21 is restored in a short time, so that it is not sufficiently adhered. Do not. On the other hand, when the loss coefficient tan δ is larger than 0.60, deformation increases during use and cannot be used repeatedly.

When mounting a semiconductor chip on an FPC board, when lead-free solder is used, it heats up to 280 degreeC. For this reason, it is preferable that the range of the shear modulus G 'of the 1st layer 21 is 3.0 * 10 <^4> or more 5.0 * 10 <^5> Pa even under the conditions of temperature 280 degreeC, Furthermore, 5.0 * 10 <^4> or more 3.0 It is preferable that it is x10 <^5> Pa or less.

Under the environment of a temperature of 20 ° C., the range of the shear modulus G ′ of the second layer 22 needs to be 5.0 × 10 ⁵ to 5.0 × 10 ⁶ Pa. For example, when the shear modulus G 'is lower than 5.0 × 10 ⁵ Pa, the adhesive force between the second layer 22 and the FPC substrate to be fixed becomes too high, thereby facilitating the FPC substrate after semiconductor chip mounting. On the other hand, if the shear modulus (G ') is higher than 5.0 x 10 ⁶ Pa, the adhesive force between the second layer 22 and the FPC substrate is insufficient, and the temporary fixation of the original purpose FPC substrate is difficult. do.

Similarly to the first layer 21, even in an environment of a temperature of 280 ° C., the range of the shear modulus G ′ of the second layer 22 is preferably 5.0 × 10 ⁵ or more and 5.0 × 10 ⁶ Pa or less, furthermore, 5.0 It is preferable that they are x10 <^5> or more and 3.0 * 10 <^6> Pa or less.

The first and second layers 21 and 22 are laminated with each layer uncrosslinked and bonded by vulcanization. However, it is not necessary to follow only this method, and other methods may be used as long as the two layers 21 and 22 can be bonded so that the shear modulus G 'of each of the layers 21 and 22 falls within the above range.

It is preferable that the range of the thickness of the 1st layer 21 is 30 micrometers or more and 200 micrometers or less, More preferably, they are 50 micrometers or more and 100 micrometers or less. E.g. If the thickness of the first layer 21 is thinner than 30 μm, the amount of deformation sufficient to adhere to the pallet body 24 is not obtained, and the first layer 21 is not sufficiently in contact with the pallet body 24. In addition, when the thickness of the first layer 21 is thicker than 200 µm, the amount of deformation with respect to the stress added at the time of mounting the semiconductor chip becomes too large, and the mounting precision is lowered.

As shown in FIG. 6, the first layer 21 is in close contact with the pallet body 24, and the upper surface of the second layer 22 is exposed to the surface. An FPC substrate (not shown) is bonded onto the second layer 22, and a semiconductor chip (not shown) is mounted on the FPC substrate. When heating the semiconductor chip to mount it on the FPC substrate, the FPC substrate is temporarily fixed on the conveyance pallet 25 by the adhesive force of the second layer 22. In addition, although not shown, in order to position a pallet in the conveyance part of a mounting apparatus, a pin hole may be formed in a pallet.

The pallet body 24 is preferably made of stainless steel, aluminum, or the like. However, any other material may be used as long as it has heat resistance and strength that can serve as a reinforcing material of an FPC substrate when mounting a semiconductor chip.

The pallet main body 24 is provided with the recessed part 28 which is about the same depth as the thickness of the tape 23, and has the width | variety to which the tape 23 can be stuck. For example, simply attaching the tape 23 on the surface of the pallet body 24 without forming the recess 28 in the pallet body 24, the tape 23 itself is on the conveyance pallet 25. In the FPC board | substrate which could form the convex part and could be put on the tape 23, the part other than being joined with the tape 23 causes a gap between the pallet main body 24. As shown in FIG. For this reason, when the pallet main body 24 does not fulfill a role as a reinforcing material, a shift occurs when mounting a semiconductor chip.

Specifically, it is preferable that the difference X between the thickness of the tape 23 and the depth of the recessed part 28 is 0 m or more and 0.05 mm or less. If this difference X is larger than 0.05 mm, the FPC board | substrate and the pallet main body 24 are similar to the case where the recessed part 28 was not formed and the tape 23 was affixed on the surface of the pallet main body 24. FIG. The gap between them becomes large, and a shift may occur when mounting a semiconductor chip.

On the other hand, when the depth of the recessed part 28 is larger than the thickness of the tape 23, it is preferable that difference X is 0.05 mm or less, and 0 mm is the most preferable. When the recessed part 28 is too deep compared with the thickness of the tape 23, in order for an FPC board | substrate to adhere to the tape 23, it is necessary to fold and bend an FPC board | substrate. Therefore, there exists a possibility that the mounted FPC board may shift from a target position.

In addition, as shown in the modified example of FIG. 7, the tape 23 may be brought into close contact with each other without forming the concave portion 28 of FIG. 6 on the surface of the pallet body 24. When the tape 23 is accommodated in the lower surface of the FPC board 26, the protrusions 27 provided on the lower surface of the FPC board 26, and the receiving space partitioned by the pallet body 24, the protrusions 27 are provided. Even in the FPC board 26 having the structure, the tape 23 can be stabilized, and the misalignment when mounting the semiconductor chip can be reduced.

The method of mounting an FPC board (not shown) and a semiconductor chip on the conveyance pallet 25 is as follows. First, the first layer 21 of the tape 23 is attached onto the pallet main body 24 so that the second layer 22 is arranged on the surface of the conveyance pallet 25, for example. The FPC substrate is placed on the conveyance pallet 25 to fix the FPC substrate by the adhesive force of the second layer 22, and a heat reflow soldering step is performed to mount the semiconductor chip on the FPC substrate. By fixing the FPC substrate on the second layer 22, the semiconductor chip can be mounted without shifting to a predetermined position.

It may also be peeled off without leaving the adhesive on the FPC substrate. In addition, the tape 23 is not peeled off, so that the tape 23 can be reused more times than a normal double-sided tape, and can be peeled off by hand without leaving the adhesive material of the adhesive on the pallet body 24 even when finally deteriorated and peeled off. .

Hereinafter, the said embodiment is described in more detail, for an Example and a comparative example. In addition, the values of the shear modulus (G ') and the loss coefficient (tanδ) are measured at a temperature of 20 ° C. and a frequency using a spectrometer VESF-III manufactured by IWAMOTO Quartz GlassLab Co., Ltd. It measured on the condition of 10 microseconds.

(Example 6)

First, the tape containing a 1st and 2nd layer was attached to the recessed part of the conveyance pallet which cut the aluminum plate of thickness 1.2mm partially 0.3mm through the 1st layer.

The first layer of Example 6 is a layer having a thickness of 0.1 mm obtained by crosslinking a polymer of a polydimethyl siloxane base incorporating a phenylmethyl siloxane unit. The shear modulus (G ′) of the first layer at a temperature of 20 ° C. is 8.3 × 10 ⁴ Pa, and the loss factor tan δ is 0.28.

The second layer of Example 6 is a layer having a thickness of 0.2 mm obtained by crosslinking and forming TSE2913-U manufactured by GE Toshiba Silicones. The shear modulus (G ′) of the second layer at a temperature of 20 ° C. is 1.0 × 10 ⁶ Pa.

Next, an FPC board | substrate is set in the predetermined position of a conveyance pallet, and the heating reflow soldering process which mounts a semiconductor chip at the temperature of 240 degreeC is performed. The position of the FPC substrate did not shift, and the semiconductor chip could be normally mounted on the FPC substrate, and no adhesive substance remained on the FPC substrate removed after mounting. In addition, the tape was able to be used repeatedly at least 30 times. Moreover, after 30 times of use, it was easily peeled off from the pallet body by hand, and no adhesive substance remained on the pallet body.

(Comparative Example 5)

The 1st layer of the comparative example 5 evaluated similarly to Example 1 except not having changed a physical property as follows by not including a phenylmethyl siloxane unit at the time of carrying out the crosslinking formation of the polymer of a polydimethylsiloxane base.

The thickness of the first layer of Comparative Example 5 is 0.1 mm, the shear modulus (G ′) of the first layer at a temperature of 20 ° C. is 2.0 × 10 ⁶ Pa, and the loss factor tan δ is 0.12.

When the heating reflow soldering process was performed, the tape shifted on the pallet main body, and unsuitability for mounting occurred.

This embodiment has the following advantages.

By the first layer 21 having a low shear modulus G ', the tape 23 and the pallet main body 24 are stably and in close contact, and by the second layer 22 having a high shear modulus G', The adhesive force between the FPC substrate to be fixed and the tape 23 can be suppressed to the extent that it is temporarily fixed.

Since the silicone elastomer has high heat resistance, even if a heat reflow soldering process is performed to mount the semiconductor chip on the FPC substrate, the semiconductor chip can be mounted without shifting from a predetermined position.

In addition, since the silicone elastomer is less likely to deteriorate, it can be reused by a greater number of times than a normal tape, and even when finally deteriorated and peeled off, it can be peeled off by hand without leaving any adhesive substance.

In addition, embodiment is not limited to each embodiment, You may change as follows.

As shown in FIG. 8, the convex part 42 may be formed in the FPC board | substrate 15 corresponding to the 2nd hole 16 by the press molding method, respectively. In this case, the FPC board | substrate 15 is positioned in the predetermined position of the conveyance pallet 11 by engaging the convex part 42 with the corresponding 2nd hole 16. As shown in FIG. FIG. 9 is a modification of the embodiment of FIG. 8 in the case where the silicone elastomer layer 13 includes the first and second layers 13a and 13b.

When the convex part 42 is formed in the FPC board | substrate 15, what is formed in the conveyance pallet 11 in order to engage the convex part 42 is not limited to the 2nd hole 16, Even if it is a concave part, good. Although this recessed part is normally formed in the depth which penetrates the silicone elastomer layer 13 to the middle of the support body 12, it may be a depth which does not reach the support body 12. As shown in FIG.

The structure which positions the FPC board 15 in the predetermined position of the conveyance pallet 11 is only the 2nd pin 35, but the convex part 42 and the 2nd hole 16 of FIG. 8 and FIG. It is not limited to the structure performed only by the engagement, You may use both the FPC board 15 and the 2nd fin 35 and the convex part 42. As shown in FIG. In this case, for example, one through hole 34 and one convex portion 42 are formed in the FPC substrate 15.

In the embodiments of FIGS. 1A, 1B and 2, the above-described respective ranges of the thermal conductivity and the volume resistivity of the silicon elastomer layer 13, that is, the thermal conductivity is 0.4 W / m · K or more, and the volume resistivity is 1.0 × 10 ^10. Ω · cm or less may be sufficient. Suitable thermal conductivity and volume resistivity can be obtained by adding both a high thermal conductivity filler and a conductive filler to the silicone elastomer.

In the modified example of the embodiment of Fig. 1A, Fig. 1B and Fig. 2, the thermal conductivity of the silicone elastomer layer 13 may not be 0.4 W / m · K or more, but the conveyance pallet in the heating step at the time of mounting ( 11) The thermal conductivity is preferably 0.4 W / m · K or more so as to prevent the occurrence of a temperature gradient of the phase.

In another modification of the embodiment of FIGS. 1A, 1B, and 2, the volume resistivity of the silicon elastomer layer 13 may not be 1.0 × 10 ¹⁰ Pa · cm or less, but prevents adhesion of dust by static electricity. The volume resistivity is preferably 1.0 × 10 ¹⁰ Pa · cm or less.

1A, 1B, and 4, the physical properties of the shear modulus (G ′), thermal conductivity, and volume resistivity of the silicone elastomer layer 13 are approximately 200 ° C. to 240 ° C. of recent lead-free solders. It is not limited to what is maintained to about 280 degreeC in case. For example, when temperature is less than 200 degreeC in a heat reflow soldering process etc., the temperature at which the physical-property value of the silicone elastomer layer 13 is maintained may be lower than 200 degreeC.

In each embodiment of FIG. 1A, FIG. 1B-FIG. 9, the process of mounting a semiconductor chip in the FFC board | substrate 15 and 26 which adhered on the conveyance pallets 11 and 25 is not limited to a heating reflow soldering process. . For example, a flow soldering process (wave soldering process) may be sufficient.

In each embodiment of FIG. 1A, FIG. 1B-FIG. 4, when positioning the FPC board | substrate 15 in the predetermined position of the conveyance pallet 11 with the 2nd pin 35, it is 2nd to the conveyance pallet 11; It is not limited to the structure in which the hole 16 is formed, For example, a recessed part may be formed. The depth of the recess reaches the middle of the support 12 through the silicon elastomer layer 13.

In each embodiment of FIG. 1A, FIG. 1B-FIG. 4, the conveyance pallet 11 does not need to form the some 2nd hole 16 corresponding to the FPC board | substrate 15, or a recessed part, but if it forms them, The FPC board 15 can be easily positioned at a predetermined position of the conveyance pallet 11.

In each embodiment of FIG. 1A, FIG. 1B-FIG. 4, although the 1st hole 14 corresponding to the mounting part 31 of a mounting apparatus does not need to be formed in the conveyance pallet 11, it is the 1st hole 14 The conveying pallet 11 can be easily positioned in the predetermined position of the mounting part 31 of a mounting apparatus by forming a.

In each embodiment of FIGS. 1A, 1B-4, the support body 12 is not limited to an aluminum plate, For example, metal plates, such as a stainless steel plate and a magnesium alloy plate, a glass fiber impregnation epoxy plate, and glass fiber impregnation Plastic plates, such as a polyester board, may be sufficient. Moreover, if mechanical strength, heat resistance, and smoothness are enough, the non-stretchable support 12 may be used with other materials, but metal plates such as the stainless steel plate and plastic plates such as glass fiber impregnated epoxy plates are particularly suitable.

1A, 1B to 9, the shear modulus G 'of the silicone elastomer layer 13 and the first and second layers 21 and 22 of the tape 23 is adjusted to an appropriate value. The method may be performed, for example, by arbitrarily mixing a plurality of commercially available silicone compounds.

In each embodiment of FIGS. 1A, 1B, and 4, the bonding method between the silicone elastomer layer 13 and the support 12 is not limited to vulcanized adhesion, and for example, a silicone elastomer sheet crosslinked using a silicone adhesive. May be attached to the support 12.

In each embodiment of FIGS. 1A, 1B, and 4, the silicone elastomer layer 13 includes physical properties such as shear modulus (G '), thermal conductivity, volume resistivity, etc. of the present invention as additives known in the silicone elastomer composition. You may add in the range which does not harm. As these additives, diatomaceous earth, calcium carbonate, carbon black, alumina, magnesium oxide, zinc oxide, boron nitride, iron oxide, etc. are mentioned besides silicon oxide, such as fumed silica, precipitated silica, and quartz powder, for example.

In each embodiment of FIG. 1A, FIG. 1B-FIG. 4, the FPC board | substrate 15 which adheres on the conveyance pallet 11 is not limited to six sheets, but is not limited to the size of the conveyance pallet 11 and the FPC board | substrate 15. FIG. May be appropriately changed. For example, when the FPC board 15 is large, the number of FPC boards 15 that can be brought into close contact with the transport pallet 11 is reduced. Moreover, when the conveyance pallet 11 is large, the number of FPC board | substrates 15 which can adhere | attach increases. The second hole 16 is formed to be appropriately changed at a position corresponding to the FPC substrate 15.

In each embodiment of FIGS. 1A, 1B-4, the position where the 2nd hole 16 is formed is not limited to the position corresponding to the two edge part on one diagonal of one sheet of FPC board | substrate 15. FIG. May be appropriately changed. In addition, the position where the 1st hole 14 is formed is not limited to the longitudinal direction both ends of the conveyance pallet 11, You may change suitably.

Claims (16)

Inelastic supports; And Silicone elastomer, which is a silicone elastomer having a range of 5.0 × 10 ⁵ Pa or more and 5.0 × 10 ⁶ Pa or less in shear shear modulus (G ') when the silicone elastomer is vibrated at a frequency of 10 Hz and measured by a dynamic viscoelasticity measurement method; And a silicone elastomer is superimposed on the support. The conveyance pallet of Claim 1 WHEREIN: The heat conductivity of the said silicone elastomer measured based on the temperature rise of a heating wire, when a certain electric power is applied to the heating wire in a silicone elastomer is 0.4 W / m * K or more, The conveyance pallet characterized by the above-mentioned. The silicon elastomer according to claim 1 or 2, wherein the four electrodes are arranged on a silicon elastomer in a straight line, and the silicon elastomer is calculated based on a potential difference generated between the two inner electrodes when a current flows between the two outer electrodes. The volume resistivity of the carrier pallet is 1.0 × 10 ¹⁰ Ω · cm or less. The conveyance pallet according to any one of claims 1 to 3, wherein the conveyance pallet includes a recess for positioning the FPC substrate. The conveyance pallet according to any one of claims 1 to 4, wherein the conveyance pallet is placed on a mounting part of the mounting apparatus, and the conveying pallet further comprises a hole for positioning the mounting part. The conveyance pallet according to any one of claims 1 to 5, wherein the support is formed of any one of a stainless steel plate, an aluminum plate, a magnesium alloy plate, a glass fiber impregnated epoxy plate, and a glass fiber impregnated polyester plate. . As a step of preparing a conveying pallet, the conveying pallet includes a non-stretchable support and a silicone elastomer, and the shear modulus of the silicone elastomer when measured by a dynamic viscoelasticity measurement method by vibrating the silicone elastomer at a frequency of 10 Hz at a temperature of 20 ° C G ') is 5.0 * 10 <^5> Pa or more and 5.0 * 10 <^6> Pa or less, and the said silicone elastomer overlaps on the said support body; Attaching the FPC substrate onto the silicone elastomer; And Mounting a semiconductor chip on an FPC substrate; A method of mounting a semiconductor chip on an FPC substrate, comprising: a. Inelastic supports; A first layer superimposed on the support; And A second layer overlying the first layer; As a conveyance pallet for FPC board | substrate containing, The first and second layers are silicone elastomers, and the range of shear modulus (G ′) of the first layer when the first layer is vibrated at a frequency of 10 Hz at a temperature of 20 ° C. and measured by dynamic viscoelasticity measurement is 3.0 × 10. ⁴ ㎩ or more and 5.0 × 10 ⁶ ㎩ or less, When the second layer was vibrated at a frequency of 10 Hz at a temperature of 20 ° C. and measured by the dynamic viscoelasticity measuring method, the shear modulus (G ′) of the second layer was 5.0 × 10 ⁵ Pa or more and 5.0 × 10 ⁶ Pa or less. The conveyance pallet for FPC board | substrates characterized by the above-mentioned. The conveyance pallet of Claim 8 in which the recessed part for positioning of an FPC board | substrate is formed in a conveyance pallet. The conveyance pallet of Claim 8 or 9 WHEREIN: A conveyance pallet is mounted on the mounting part of a mounting apparatus, and the positioning hole with respect to the said mounting part is formed in a conveyance pallet. The conveyance pallet according to any one of claims 8 to 10, wherein the support is formed of any one of a stainless steel plate, an aluminum plate, a magnesium alloy plate, a glass fiber impregnated epoxy plate, and a glass fiber impregnated polyester plate. . As a process of preparing a conveyance pallet, the said conveyance pallet contains a non-stretchable support body, the 1st layer superimposed on the said support body, and the 2nd layer superimposed on this 1st layer, and is 1st at the temperature of 20 degreeC The range of shear modulus (G ′) of the first layer when the layer is vibrated at a frequency of 10 Hz and measured by a dynamic viscoelasticity measurement method is 3.0 × 10 ⁴ Pa or more and 5.0 × 10 ⁶ Pa or less, and the second at a temperature of 20 ° C. The range of shear modulus (G ′) of the second layer when the layer is vibrated at a frequency of 10 Hz and measured by a dynamic viscoelasticity measurement method is 5.0 × 10 ⁵ Pa or more and 5.0 × 10 ⁶ Pa or less; Attaching an FPC substrate on the second layer; And Mounting a semiconductor chip on the FPC substrate after adhesion; A method of mounting a semiconductor chip on an FPC substrate, comprising: a. A temporary fixing tape for an FPC substrate, wherein the temporary fixing tape includes first and second layers which are silicone elastomers, The range of shear modulus (G ′) of the first layer when the first layer was vibrated at a frequency of 10 Hz at a temperature of 20 ° C. and measured by a dynamic viscoelasticity measuring method was 3.0 × 10 ⁴ Pa or more and 5.0 × 10 ⁵ Pa The range of the loss coefficient tan δ of the first layer is 0.15 or more and 0.60 or less. The range of the shear modulus (G ′) of the second layer when the second layer is vibrated at a frequency of 10 Hz at a temperature of 20 ° C. and measured by a dynamic viscoelasticity measuring method is 5.0 × 10 ⁵ Pa or more and 5.0 × 10 ⁶ Pa The tape for temporarily fixing characterized by the following. The temporary fixing tape according to claim 13, wherein the thickness range of the first layer is 30 µm or more and 200 µm or less. The temporarily fixed tape for an FPC board | substrate contains the 1st and 2nd layer which is a silicone elastomer, and when the said 1st layer vibrated at the frequency of 10 Hz at the temperature of 20 degreeC, and it measured by the dynamic viscoelasticity measuring method, The range of shear modulus (G ′) of the first layer is 3.0 × 10 ⁴ GPa or more and 5.0 × 10 ⁵ GPa or less, and the range of loss coefficient tanδ of the first layer is 0.15 or more and 0.60 or less. The range of the shear modulus (G ′) of the second layer when the second layer is vibrated at a frequency of 10 Hz at 20 ° C. and measured by a dynamic viscoelasticity measuring method is 5.0 × 10 ⁵ Pa or more and 5.0 × 10 ⁶ Pa or less. ; And A pallet body, wherein said first layer is attached to the surface of said pallet body, wherein said FPC substrate conveyance pallet. The pallet main body has a recessed part, a 1st layer adheres to a recessed part, and the range of the difference between the depth of a recessed part and the thickness of the tape for temporarily fixing is 0 mm or more and 0.05 mm or less, The conveyance characterized by the above-mentioned. palette.