TW200301171A - Electrolytic processing apparatus and method - Google Patents

Electrolytic processing apparatus and method Download PDF

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Publication number
TW200301171A
TW200301171A TW091135927A TW91135927A TW200301171A TW 200301171 A TW200301171 A TW 200301171A TW 091135927 A TW091135927 A TW 091135927A TW 91135927 A TW91135927 A TW 91135927A TW 200301171 A TW200301171 A TW 200301171A
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TW
Taiwan
Prior art keywords
electrode
processing
workpiece
feeding
electrolytic
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TW091135927A
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Chinese (zh)
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TWI283196B (en
Inventor
Mitsuhiko Shirakashi
Masayuki Kumekawa
Hozumi Yasuda
Itsuki Kobata
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Ebara Corp
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Priority claimed from JP2001380641A external-priority patent/JP3995463B2/en
Priority claimed from JP2002067393A external-priority patent/JP2003266245A/en
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of TW200301171A publication Critical patent/TW200301171A/en
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Publication of TWI283196B publication Critical patent/TWI283196B/en

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B23H3/02Electric circuits specially adapted therefor, e.g. power supply, control, preventing short circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23HWORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00Combined machining
    • B23H5/06Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08Electrolytic grinding
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

There is provided an electrolytic processing apparatus and method that can effect processing of a workpiece, having in the surface an electrically conductive material as a to-be-processed material, with high processing precision and can produce an intended form of processed workpiece with high accuracy of form. The electrolytic processing apparatus includes: a processing electrode which can come close to or in contact with a workpiece; a feeding electrode for feeding electricity to the workpiece; an ion exchanger disposed in at least one of the space between the workpiece and the processing electrode and the space between the workpiece and the feeding electrode; a fluid supply section for supplying a fluid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, in which the ion exchanger is present; and a power source for supplying an electric power between the processing electrode and the feeding electrode while arbitrarily controlling at least one of a voltage and an electric current.

Description

2G〇j〇ll?|2G〇j〇ll? |

五、發明說明(1) [發明所屬之技術領域 於 導 本發明係關於一種電解加工裝置及方法,尤复私B 一種用以處理存在於基板(尤其係半導體晶圓)表面上之 電材料’或者係清除附著在基板表面上之雜質的電解力 裝置及方法。 ϋ [先前技術] 近年來,使用銅(Cu )來取代使用鋁或鋁合金來作 種在遠如半導體晶圓之基板上構成互連電路 (interconnection circuits)的材料,已是相當明頻 勢,其中銅係具有較低的電氣阻抗以及較高的電子^ ^趨 (electromigration)阻抗。銅互連線(c〇pper 夕 interconnect)通常係藉由將銅填充至形成在基板表 之細微凹洞中而形成,已知有各種不同的技術來形&中 銅互連線,包括化學氣相沈積(CVD)、減鍍及電鍍方&此_ 依照上述的任何技術,係先在基板的整個表面上带/ 。 膜,然後再藉由化學機械研磨(CMp)來清除不需要7銦』 第1 A至第1 C圖係依照加工步驟順序來顯示形成且右 互連線之,板W的一個實例。如第1A圖所示,諸如二〃鋼 矽(s 1 0 2)薄膜或低k值材料之薄膜的絕緣薄膜2係沈 其中形成有半導體裝置之導電層^上,其中該屏$表 形成在半導體基部丨上。用以作為互連線之接觸孔 4係精由微影/钱刻技術而形成在該絕緣薄膜2中。德本 =氮化钽(TaN)或類似材料所形成之阻障層5係形成在敕 表面上,且一種子層7係形成在該阻障層5上’其中該ς子V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to an electrolytic processing device and method, particularly Fu B. A method for processing electrical materials existing on the surface of a substrate (especially a semiconductor wafer) ' Or it is an electrolytic device and method for removing impurities adhering to the substrate surface.先前 [Previous technology] In recent years, the use of copper (Cu) instead of aluminum or aluminum alloys as a material for forming interconnection circuits on a substrate as far as a semiconductor wafer has become quite clear. The copper system has a lower electrical impedance and a higher electronic impedance. Copper interconnects are usually formed by filling copper into minute recesses formed on the substrate surface. Various techniques are known to shape & copper interconnects, including chemical Vapor Deposition (CVD), Subtractive Plating, and Plating & This _ According to any of the techniques described above, the / is first applied to the entire surface of the substrate. The film is then removed by chemical mechanical polishing (CMp) to remove unnecessary 7 indium. Figures 1A to 1C show an example of the plate W, which is formed and the right interconnect line in accordance with the sequence of processing steps. As shown in FIG. 1A, an insulating film 2 such as a silicon steel (s 102) film or a film of a low-k material is deposited on a conductive layer of a semiconductor device, and the screen is formed on On the semiconductor base. The contact hole 4 used as the interconnection line is formed in the insulating film 2 by a lithography / cutting technique. Deben = a barrier layer 5 formed of tantalum nitride (TaN) or a similar material is formed on the surface of ytterbium, and a sub-layer 7 is formed on the barrier layer 5 ′

2uUj〇H7| 五、發明說明(2) 層-7係用以作為電鍍之電子供應層。 一 接著,如第1 B圖所示,在基板W之表面上進行銅電 鍍·,以將銅充填於該接觸孔3及溝渠4中,在此同時,在該 絕緣薄膜2上沈積銅薄膜6。之後,在絕緣薄膜2上之銅薄 膜6以及阻障層5便可以藉由化學機械研磨(CMP)來加以清 除,以使充填在用以作為互連線之接觸孔3及溝渠4中之銅 薄膜6之表面與該絕緣薄膜2之表面係大致位在同一表面 上。藉此,便可以形成由銅薄膜6所構成之互連線,如第 1 C圖所示。 ® 在各種不同類型設備中的元件,近來已變得愈來愈精 細,且需要具備更高的精密度。由於次微米製造技術已廣 為採用,因此,材料之特性係會深受加工方法所影響。在 這些條件下,在此一於工件之適當部分施予物理破壞並且 利用工具將工件表面上加以清除之習知加工方法中,將會 產生相當多的瑕疯,而使工件的品質變差。因此,如何在 進行加工時不會使材料特性變差,乃係相當重要的問題。 已有發展出某些加工方法來解決此一問題,諸如化學 研磨、電解加工以及電解研磨。不同於習知的物理加工, k些方法係藉由化學溶解反應來進行清除處理或類似的處 因此,這些方法並不會產生諸如由於塑性變形而產生 變樣層(altered layer )及差排(dislocation )之瑕;庇,使 得這些加工方法可以在不破壞材料特性的情況下來進行。 已有發展出一種使用離子交換器之電解反應以及在超 純水中進行加工處理之方法,以作為電解加工方法,第22uUj〇H7 | 5. Description of the invention (2) Layer-7 is used as the electron supply layer for electroplating. Next, as shown in FIG. 1B, copper plating is performed on the surface of the substrate W to fill the contact holes 3 and the trenches 4 with copper, and at the same time, a copper film 6 is deposited on the insulating film 2 . After that, the copper film 6 and the barrier layer 5 on the insulating film 2 can be removed by chemical mechanical polishing (CMP), so that the copper filled in the contact hole 3 and the trench 4 used as the interconnection line can be removed. The surface of the film 6 and the surface of the insulating film 2 are substantially on the same surface. Thereby, the interconnection line composed of the copper thin film 6 can be formed, as shown in FIG. 1C. ® Components in a variety of different types of equipment have recently become more sophisticated and require greater precision. Since sub-micron manufacturing techniques have been widely adopted, the characteristics of materials are greatly affected by processing methods. Under these conditions, in this conventional processing method in which physical damage is applied to an appropriate portion of the workpiece and the surface of the workpiece is removed with a tool, a considerable amount of blemishes will be generated, and the quality of the workpiece will be deteriorated. Therefore, how to prevent the material characteristics from deteriorating during processing is a very important issue. Certain machining methods have been developed to solve this problem, such as chemical grinding, electrolytic machining, and electrolytic grinding. Unlike the conventional physical processing, these methods use chemical dissolution to perform the removal process or the like. Therefore, these methods do not produce altered layers and dislocations such as plastic deformation. ) Flaws, so that these processing methods can be carried out without destroying the characteristics of the material. As an electrolytic processing method, an electrolytic reaction method using an ion exchanger and a processing method in ultrapure water have been developed.

314269.ptd 第8頁 2uUj〇H7i 五、發明說明(3) 圖係顯示此電解加工處理之原理。第2圖顯示當一安裝在 處理電極1 4上之離子交換器1 2a與安裝在饋電電極1 6上之 離子交換器1 2 b彼此接觸或者靠近工件1 0之表面時,經由 電源1 7而在處理電極1 4與饋電電極1 6之間供應電壓,並且 由介於處理電極1 4、饋電電極1 6以及工件1 0之間的液體供 應部1 9來供應液體1 8 (例如超純水)時的解離狀態。在此電 解加工方法的例子中,在諸如超純水之液體1 8中的水分子 2 0係利用離子交換器12a、12b而有效地解離成氫氧離子22 及氫離子2 4。如此形成之氫氧離子2 2便可以藉由例如在工 件1 0與處理電極1 4之間的電場以及藉由液體1 8的流動,而 攜帶至工件正對於處理電極1 4之表面,籍此,在工件1 0附 近的氫氧離子2 2密度便會增加,且該氫氧離子2 2會與工件 1 0之原子1 0 a產生反應。由此反應所產生的反應產物2 6便 會溶解在液體1 8中,並且藉由液體1 8沿著工件1 0表面之流 動而由工件1 〇上清除。如此,便可對工件1 〇之表面進行清 除處理。 如上所述,在藉由於工件與處理電極及饋電電極之至 少其中一個電極之間插置有離子交換器所進行的工件電解 加工處理中,通常較難以控制處理速率及處理的結束時 間。 當將供應於處理電極及饋電電極之間的電流控制在固 定值的情況下來進行電解加工處理時,原則上,該處理速 率會變得固定,使得工件之加工面積不會改變,藉此使得 在加工處理期間可以容易地控制該處理速率。再者,由於314269.ptd Page 8 2uUj〇H7i V. Description of Invention (3) The figure shows the principle of this electrolytic processing. Fig. 2 shows that when an ion exchanger 12a mounted on the processing electrode 14 and an ion exchanger 1 2b mounted on the feed electrode 16 are in contact with each other or near the surface of the workpiece 10, the power is supplied via the power source 7 A voltage is supplied between the processing electrode 14 and the feeding electrode 16 and the liquid 1 8 is supplied by the liquid supply portion 19 between the processing electrode 14, the feeding electrode 16 and the workpiece 10 (for example Pure water). In this example of the electrolytic processing method, water molecules 20 in a liquid 18 such as ultrapure water are effectively dissociated into hydroxide ions 22 and hydrogen ions 24 using ion exchangers 12a and 12b. The hydroxide ion 22 thus formed can be carried to the surface of the workpiece facing the processing electrode 14 by, for example, the electric field between the workpiece 10 and the processing electrode 14 and by the flow of the liquid 18, whereby The density of the hydroxide ion 22 near the workpiece 10 will increase, and the hydroxide ion 22 will react with the atom 10a of the workpiece 10. The reaction product 26 produced by this reaction will be dissolved in the liquid 18, and will be removed from the workpiece 10 by the liquid 18 flowing along the surface of the workpiece 10. In this way, the surface of the workpiece 10 can be cleaned. As described above, in the electrolytic processing of a workpiece by an ion exchanger interposed between the workpiece and at least one of the processing electrode and the feeding electrode, it is often difficult to control the processing rate and the end time of the processing. When the electrolytic processing is performed while the current supplied between the processing electrode and the feeding electrode is controlled at a fixed value, in principle, the processing rate becomes fixed so that the processing area of the workpiece does not change, thereby making This processing rate can be easily controlled during processing. Furthermore, because

314269.ptd 第9頁 2uUj〇H7i 五、發明說明(4) 在-此例中,電流之總量可以容易地計算出來,因此便可以 容> 易地決定處理量以及處理的結束時間。 • 然而,若加工處理之面積改變,則處理速率亦會改 變。關於此方面,如第3 A至第3 D圖所示,當埋設在形成於 、基板W表面之互連溝渠4中的銅薄膜6,係藉由以一固定電 流之電解加工處理來加以研磨,由絕緣體所構成之阻障層 1 5便會隨著研磨的進行而逐漸地外露於基板W之表面。當阻 障層5已外露在基板W之表面上時,加工面積係依照直線/ 空間比以及互連線圖案密度而減少,進而造成處理速率的 遽上升。 再者,當移除導電薄膜時,諸如在基板W表面上之待 處理材料的銅薄膜6,導電薄膜之電阻率係會隨著薄膜厚 度的減少而增力〇。因此,當在經控制之固定電流的情況下 進行電解加工處理時,供應於處理電極及饋電電極之間的 電壓便會隨著薄膜厚度之程度而增加。當互連圖案已外露 而使電解加工處理接近其處理的結束時間時,電壓增加的 速率係會變得相當大。第4圖係顯示以經控制之固定電流 值所進行之電解加工處理中,施加之電壓隨時間改變(增 力i)的狀態。如第4圖所示,電流密度愈大,則電壓增加的 速率亦會變大。電壓的增加係因為所施加之電壓與銅薄膜 之薄膜厚度成反比。在電壓急遽上升的情況下,處理的結 τ束時間便難以控制。此外,供應電壓的過度上升係會造成 超純水的絕緣失效(所謂的放電),進而對工件造成物理破 壞。314269.ptd Page 9 2uUj〇H7i V. Description of the invention (4) In this example, the total amount of current can be easily calculated, so it is possible to easily determine the amount of processing and the end time of processing. • However, if the area to be processed changes, the processing rate will also change. In this regard, as shown in FIGS. 3A to 3D, when the copper thin film 6 buried in the interconnection trench 4 formed on the surface of the substrate W is polished by electrolytic processing with a fixed current The barrier layer 15 made of an insulator is gradually exposed on the surface of the substrate W as the polishing progresses. When the barrier layer 5 has been exposed on the surface of the substrate W, the processing area is reduced in accordance with the straight line / space ratio and the density of the interconnection pattern, which in turn causes the processing rate to increase. Furthermore, when the conductive thin film is removed, such as the copper thin film 6 of the material to be processed on the surface of the substrate W, the resistivity of the conductive thin film increases as the thickness of the thin film decreases. Therefore, when the electrolytic processing is performed under a controlled fixed current, the voltage supplied between the processing electrode and the feed electrode increases with the thickness of the film. When the interconnection pattern is exposed and the electrolytic processing is near the end of its processing, the rate of voltage increase becomes quite large. Fig. 4 shows a state in which an applied voltage is changed (increase i) with time in an electrolytic machining process with a controlled fixed current value. As shown in Figure 4, the greater the current density, the greater the rate at which the voltage increases. The increase in voltage is because the applied voltage is inversely proportional to the film thickness of the copper film. In the case of a sharp rise in voltage, it is difficult to control the processing time. In addition, an excessive rise in the supply voltage can cause insulation failure (so-called discharge) of ultrapure water, which in turn can cause physical damage to the workpiece.

314269.ptd 第10頁 2uUj〇I|7i 五、發明說明(5) 在另一方面,當電解加工處理係控制供應在處理電極 與饋電電極之間且為定值之電壓的情況下來進行,處理速 率係會隨著處理面積的減少而急遽下降。關於此方面,如 第5 A至第5 D圖所示,當埋設形成在基板W表面之互連溝渠4 中的銅薄膜6,藉由在固定電壓下所進行之電解加工處理 來加以研磨時,由絕緣體所構成之阻障層5便會隨著研磨 的進行而外露於基板W的表面。當阻障層5外露在基板W表 面上時,處理面積便會減少而使電流難以流動,而使得處 理速率急遽下降。再者,導電薄膜,諸如銅薄膜6,係會 隨著薄膜厚度的減少而增加其電阻,且電流值會隨著電阻 的增加而減少。電流值減少的程度會隨著愈接近處理的結 束時間而變得愈來愈小。第6圖係顯示在以經控制之電壓 所進行之電解加工處理中,電流隨時間而改變的情況,在 接近處理的結束時間時,處理速率的變化會因此而變小。 因此,相較於將電流值控制在固定值的情況,其較能夠精 確地決定處理的結束時間。 然而,如上所述,當藉由在處理電極及饋電電極之間 供應固定的電壓來進行電解加工處理時,電流係會隨著時 間而改變。處理速率亦會隨著電流而改變,而使得在加工 處理期間難以控制處理速率。 再者,藉由以上述方式利用離子交換器來電解加工處 理一導電性材料時,其無法如一般應用於傳統的機械加工 處理方法來直接採用數值控制機構。有關於此,一種電解 加工處理方法係利用在氫氧離子(0H _)與工件之原子之間的314269.ptd Page 10 2uUj〇I | 7i V. Description of the invention (5) On the other hand, when the electrolytic processing is controlled under the condition that the voltage supplied between the processing electrode and the feeding electrode is constant, The processing rate decreases sharply as the processing area decreases. In this regard, as shown in FIGS. 5A to 5D, when the copper thin film 6 buried in the interconnection trench 4 formed on the surface of the substrate W is polished by electrolytic processing under a fixed voltage The barrier layer 5 made of an insulator is exposed on the surface of the substrate W as the polishing progresses. When the barrier layer 5 is exposed on the surface of the substrate W, the processing area is reduced, making it difficult for current to flow, and the processing rate is drastically reduced. Moreover, the conductive film, such as the copper film 6, increases its resistance as the thickness of the film decreases, and the current value decreases as the resistance increases. The degree of reduction in current value becomes smaller as it approaches the end time of the process. Fig. 6 shows that the current changes with time in the electrolytic processing treatment with a controlled voltage, and the change in the processing rate becomes smaller as the processing time approaches the end time of the treatment. Therefore, compared with the case where the current value is controlled to a fixed value, it is possible to accurately determine the end time of the processing. However, as described above, when the electrolytic processing is performed by supplying a fixed voltage between the processing electrode and the feeding electrode, the current system changes with time. The processing rate also changes with the current, making it difficult to control the processing rate during processing. Furthermore, when an electroconductive process is performed on an electroconductive material by using an ion exchanger in the above-mentioned manner, it cannot directly apply a numerical control mechanism as it is generally applied to a conventional machining process. In this regard, an electrolytic processing method uses an electrode between a hydroxide ion (0H_) and an atom of a workpiece.

314269.ptd 第11頁 2uUj〇H7i 五、發明說明(6) 化-學反應來進行。因此,即使在工件與工具(電極)彼此並 未1妾觸的情況下,仍會發生處理的現象。因此,電解加工 處j里係不同於機械加工處理的原理,其中該機械加工處理 係會對工件造成物理破壞。更詳細地說,在一般的機械加 二處理中,所進行之加工處理係使彼此接觸之工件與工具 產生相對運動,因此這會對工件造成物理破壞。藉由解除 X在工件與工具之間的接觸(例如當到達所需要的加工處理 程度時),便可以中止加工處理的進程,此時,即使當工 具通過工件的表面,仍不會使加工處理繼續進行。在另一 ^5,依照上述利用在反應物質與工件之間的化學反應所 進行的電解加工處理方法中,當反應物質的量到達一定程 度時,加工處理現象仍會繼續發生,即使當工具(電極)並 未與工件接觸時亦然。因此,當工具(電極)通過工件其已 進行預定處理量之部分的表面上時,加工處理現象仍會不 當地進行。 因此,為了使利用在反應物質與工件之間的化學反應 所進行的電解加工方法能以相當高的加工處理精密度來加 工處理導電材料而使經加工處理之工件能夠具有所需要的 ^犬,係需要採用一種控制系統,該控制系統不僅可以與 』0戒加工處理一樣地控制在工件與工具之間的接觸狀態 (工具的位置),且尚可控制在反應物質(諸如氫氧離子)與 匕件之原子之間的化學反應。 [發明内容] 本發明係有鑑於上述背景技術存在的問題而提出。因314269.ptd Page 11 2uUj〇H7i V. Description of the invention (6) Chemical-chemical reaction. Therefore, even when the workpiece and the tool (electrode) are not in contact with each other, processing may still occur. Therefore, the principle of electrolytic processing is different from the principle of mechanical processing, where the mechanical processing will cause physical damage to the workpiece. In more detail, in the general mechanical plus two processing, the processing is performed to cause the workpiece and the tool that are in contact with each other to move relative to each other, so this will cause physical damage to the workpiece. By releasing the contact of X between the workpiece and the tool (for example, when the required degree of processing is reached), the process of processing can be suspended. At this time, even when the tool passes the surface of the workpiece, the processing will not be made. keep going. In another ^ 5, according to the above-mentioned electrolytic processing method using a chemical reaction between a reactive substance and a workpiece, when the amount of the reactive substance reaches a certain level, the processing phenomenon will continue to occur, even when the tool ( The same applies when the electrode is not in contact with the workpiece. Therefore, when the tool (electrode) passes over the surface of the part of the workpiece for which a predetermined amount of processing has been performed, the processing phenomenon may still proceed improperly. Therefore, in order to enable the electrolytic processing method using a chemical reaction between a reactive substance and a workpiece to process a conductive material with a relatively high degree of processing precision, so that the processed workpiece can have the required structure, The system needs to adopt a control system, which can not only control the contact state between the workpiece and the tool (the position of the tool), but also control the reaction material (such as hydroxide ions) and A chemical reaction between the atoms of a dagger. SUMMARY OF THE INVENTION The present invention has been made in view of the problems existing in the background art described above. because

314269.ptd 第12頁 2uUj〇H7i 五、發明說明(7) 此,本發明之目的係要提供一種電解加工裝置及方法,可 以進行一致性的加工處理,而不會使處理速率產生急遽的 變化。 本發明之另一目的係要提供一種電解加工裝置及方 法,能以相當高的精密度來加工處理工件,其中該工件在 表面上係具有作為待處理材料之導電性材料,並且可製造 具有相當高的形狀精密度之加工工件的所欲形狀。 為了達成上述之目的,本發明係提供一種電解加工裝 置,包含:處理電極,可以靠近或與工件相接觸;饋電電 極,係用以將電力饋給至工件;離子交換器,係設置在該 工件與處理電極之間的空間以及工件與饋電電極之間之空 間的至少一個空間中;流體供應部,係用以將流體供應至 該工件與該處理電極及饋電電極之至少其中一個之間的空 間中,該空間中係存在有該離子交換器;以及電源,係在 任意控制電壓或電流之至少其中一者的情況下,供應電能 至該處理電極與饋電電極之間。 在電解加工處理中,處理速率係會隨著供應至處理電 極與饋電電極之間的的電流變大而增快(處理速率係隨著 電流變小而變慢)。此外,當供應至饋電電極與處理電極 之間的電壓上升時,流經饋電電極與處理電極之間的電流 便會變大,因而造成處理速率變快。因此,藉由任意控制 (例如隨時間而改變),供應於處理電極與饋電電極之間 的電壓及電流的至少其中一者,便可使得處理速率能夠依 照加工處理的階段(狀態)而獲致最佳化。314269.ptd Page 12 2uUj〇H7i V. Description of the invention (7) Therefore, the object of the present invention is to provide an electrolytic processing device and method that can perform consistent processing without causing a drastic change in processing rate. . Another object of the present invention is to provide an electrolytic processing device and method capable of processing and processing a workpiece with a relatively high degree of precision, wherein the workpiece has a conductive material as a material to be processed on the surface, and can be manufactured with a considerable High shape precision for machining the desired shape of the workpiece. In order to achieve the above object, the present invention provides an electrolytic processing device including: a processing electrode, which can be close to or in contact with a workpiece; a feeding electrode, which is used to feed power to the workpiece; an ion exchanger, which is provided at the In at least one of the space between the workpiece and the processing electrode and the space between the workpiece and the feeding electrode; the fluid supply unit is used to supply fluid to the workpiece and at least one of the processing electrode and the feeding electrode In the space between them, the ion exchanger is present in the space; and the power source is to supply electric energy between the processing electrode and the feeding electrode under the condition of at least one of any control voltage or current. In electrolytic processing, the processing rate increases as the current supplied between the processing electrode and the feed electrode increases (the processing rate decreases as the current decreases). In addition, when the voltage supplied between the feeding electrode and the processing electrode rises, the current flowing between the feeding electrode and the processing electrode becomes larger, resulting in a faster processing rate. Therefore, by arbitrary control (such as changing with time), at least one of the voltage and current supplied between the processing electrode and the feeding electrode can enable the processing rate to be achieved according to the stage (state) of the processing optimize.

314269.ptd 第13頁 2uUj〇H7i 五、發明說明(8) - 在上述的電解加工裝置中,該電源係可供應固定電壓 至“該處理電極與饋電電極之間,或者係使電壓及電流至少 其中一者隨時間改變。 該電源係可供應固定電壓或具有連續變化值之固定電 _流至該處理電極與饋電電極之間,因此,舉例來說,所進 行之電解加工處理可藉由供應高電流或高電壓至該處理電 <極與饋電電極之間,直到加工處理接近處理的結束時間為 止例如直到互連圖案外露出來為止,藉此可以得到處理速 率,且當加工處理接近處理的結束時間時,可供應低電流 #低電壓,以藉此使處理速率下降,以避免發生所謂的過 度蝕刻。 該電源係可依序供應固定電流及固定電壓至該處理電 極與饋電電極之間,舉例來說,在工件之加工處理面積並 未改變之加工處理的階段中,電解加工處理係可以在經控 制之固定電流的狀況下來進行,藉此保持固定的處理速 率,且有助於控制處理速率。當接近處理的結束時間而加 工處理面積急遽減少時,電解加工處理係可以在固定電壓 的狀況下來進行,以有助於控制在接近處理結束時間時之 ^理速率。 _ _ 該電源係可先供應具有連續變化值之固定電流,然後 再供應具有連續變化值之固定電壓至該處理電極與饋電電 〃極之間。這使得在供應連續固定電流情況下的電解加工處 理可以先步階改變該處理速率,然後在供應連續固定電壓 情況下的電解加工處理中再步階改變該處理速率。314269.ptd Page 13 2uUj〇H7i V. Description of the invention (8)-In the above-mentioned electrolytic processing device, the power supply can supply a fixed voltage between "the processing electrode and the feeding electrode, or the voltage and current At least one of them changes with time. The power supply can supply a fixed voltage or a fixed electric current with a continuously changing value between the processing electrode and the feeding electrode. Therefore, for example, the electrolytic processing can be performed by From the supply of high current or high voltage to the processing electrode < electrode and the feeding electrode, until the processing process is close to the end time of the processing, for example, until the interconnection pattern is exposed, the processing rate can be obtained. Near the end of the process, a low current # low voltage can be supplied to reduce the processing rate to avoid so-called over-etching. The power supply can sequentially supply a fixed current and a fixed voltage to the processing electrode and feed Between electrodes, for example, in the stage of processing where the processing area of the workpiece has not changed, the electrolytic processing can be The fixed current is controlled to maintain a fixed processing rate and help control the processing rate. When the processing area is rapidly reduced near the end of the processing, the electrolytic processing can be performed at a fixed voltage. To help control the processing rate near the end of the process. _ _ The power supply can first supply a fixed current with a continuously changing value, and then supply a fixed voltage with a continuously changing value to the processing electrode and feed. Between electric and electric poles. This makes the electrolytic processing process in the case of supplying a constant fixed current can first change the processing rate, and then changes the processing rate in steps of the electrolytic processing in the case of supplying a constant fixed voltage.

314269.ptd 第14頁 2uUj〇H7i 五、發明說明(9) 此外,電源係可以使電壓或電流值隨時間來連續改 變,這使得電解加工處理可以依照加工處理的階段(狀態) 而以適當的處理速率來進行。 本發明係提供一種電解加工方法,包含:提供處理電 極、饋電電極以及離子交換器,其中該離子交換器係設置 在工件與處理電極之間之空間與該工件與饋電電極之間之 空間的至少其中一個空間中;使該處理電極靠近或接觸該 工件,同時由饋電電極饋給電力至工件;供應流體至介於 該工件與該處理電極及饋電電極之至少其中一個之間的空 間中,該空間中係存在有該離子交換器;以及在任意控制 電壓或電流之至少其中一者的情況下,供應電能至該處理 電極與饋電電極之間。 本發明亦提供一種電解加工裝置,包含:處理電極, 可以靠近或與工件相接觸;饋電電極,係用以將電力饋給 至工件;離子交換器,係設置在該工件與處理電極之間的 空間以及工件與饋電電極之間之空間的至少其中一個空間 中;流體供應部,係用以將流體供應至該工件與該處理電 極及饋電電極之至少其中一個之間的空間中,該空間中係 存在有該離子交換器;以及電量積算器,係用以測量供應 於處理電極與饋電電極之間的總電量。 本發明尚提供一種電解加工方法,包含:提供處理電 極、饋電電極以及離子交換器,其中該離子交換器係設置 在工件與處理電極之間之空間與該工件與饋電電極之間之 空間的至少其中一個空間中;使該處理電極靠近或接觸該314269.ptd Page 14 2uUj〇H7i V. Description of the invention (9) In addition, the power supply system can continuously change the voltage or current value with time, which allows the electrolytic processing to be performed in accordance with the stage (state) of the processing. Processing rate to proceed. The invention provides an electrolytic processing method, including: providing a processing electrode, a feeding electrode, and an ion exchanger, wherein the ion exchanger is disposed between a space between the workpiece and the processing electrode and a space between the workpiece and the feeding electrode In at least one of the spaces; the processing electrode is brought close to or in contact with the workpiece, while power is fed to the workpiece by the feeding electrode; and the fluid is supplied between the workpiece and at least one of the processing electrode and the feeding electrode In the space, the ion exchanger is present in the space; and in the case of at least one of an arbitrary control voltage or current, power is supplied between the processing electrode and the feeding electrode. The invention also provides an electrolytic processing device, which includes: a processing electrode that can be near or in contact with a workpiece; a feeding electrode for feeding power to the workpiece; an ion exchanger that is arranged between the workpiece and the processing electrode A fluid supply unit for supplying fluid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, The space is provided with the ion exchanger; and a power totalizer for measuring the total power supplied between the processing electrode and the feeding electrode. The invention also provides an electrolytic processing method, comprising: providing a processing electrode, a feeding electrode, and an ion exchanger, wherein the ion exchanger is disposed between a space between the workpiece and the processing electrode and a space between the workpiece and the feeding electrode In at least one of the spaces; bringing the processing electrode closer to or in contact with the

314269.pid 第15頁 2uQj〇U7i 五、發明說明(10) 工-件,同時由饋電電極饋給電力至工件;供應一流體至該 工、與該處理電極及饋電電極之至少其中一個之間的空間 中,,該空間中係存在有該離子交換器;以及測量供應於處 理電極與饋電電極之間的總電量,並且根據所測得之總電 -量來決定出工件之加工處理進程及/或加工處理的結束時 間。 < 本發明亦提供另一種電解加工裝置,包含:固定座, 係可移除自如地固持工件;處理電極,係可靠近或接觸該 由固定座所固持之工件;饋電電極,係用以饋給電力至該 A]定座所固持之工件;離子交換器,係設置在工件與處 理電極之間之空間與該工件與饋電電極之間之空間的至少 其中一個空間中;流體供應部,係用以將流體供應至該工 件與該處理電極及饋電電極之至少其中一個之間的空間 中,該空間中係存在有該離子交換器;電源,係在控制電 壓及電流之至少其中一者的情況下,供應電能至該處理電 極與饋電電極之間;驅動部,係用以使該由固定座所固持 之工件與處理電極產生相對運動;以及數值控制器,係針 對驅動部以及電源來進行數值控制。 Λ 依照此電解加工裝置,依照預定之加工處理時間以及 座標差值之加工處理量所決定的電流值數據(或電壓 值數據)係輸入至數值控制器中,該加工處理量係對應於 5工件加工處理前之形狀與加工處理後所要工件形狀之間的 座標差值或者是工件在加工處理期間之形狀與加工處理後 所要工件形狀之間的座標差值。根據所輸入之數據,數值314269.pid Page 15 2uQj〇U7i V. Description of the invention (10) Work-pieces, at the same time, power is fed from the feed electrode to the workpiece; supply a fluid to at least one of the work, the processing electrode, and the feed electrode In the space between them, the ion exchanger is present in the space; and the total electric power supplied between the processing electrode and the feeding electrode is measured, and the processing of the workpiece is determined according to the measured total electric-amount. End of processing and / or processing. < The present invention also provides another electrolytic processing device, including: a fixed base for holding a workpiece freely; a processing electrode for approaching or contacting the workpiece held by the fixed base; and a feeding electrode for Feeding power to the workpiece held by the A] seat; Ion exchangers are provided in at least one of the space between the workpiece and the processing electrode and the space between the workpiece and the feeding electrode; the fluid supply unit Is used to supply fluid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, and the ion exchanger is present in the space; the power source is at least one of the control voltage and the current In the case of one of them, power is supplied between the processing electrode and the feeding electrode; the driving part is used to cause the workpiece and the processing electrode held by the fixed seat to move relative to each other; and the numerical controller is for the driving part And power supply for numerical control. Λ According to this electrolytic processing device, the current value data (or voltage value data) determined according to the predetermined processing time and the processing amount of the coordinate difference value are input into the numerical controller, and the processing amount corresponds to 5 workpieces The coordinate difference between the shape before the processing and the desired workpiece shape after the processing, or the coordinate difference between the shape of the workpiece during the processing and the desired workpiece shape after the processing. According to the entered data, the value

314269.ptd 第16頁 2uUj〇H7i 五、發明說明(11) 控制器便可數值化控制由電源供應於該處理電極及饋電電 極之間的電流(或電壓),如此控制之加工處理便可生產出 具有高形狀精確度之加工處理後工件的所要形狀。 上述的控制係根據在預定加工處理時間中所進行之電 解加工處理,以及由設置成面對工件之處理電極來加工處 理工件的狀況而進行,而加工處理量係依處理速率而定, 因此亦依供應於處理電極與饋電電極之間的電流(或電壓) 值而定。有關於此,在此電解加工處理中,處理速率係隨 著供應至處理電極與饋電電極之間的電流值變大而變快。 此外,當較高的電壓施加至處理電極與饋電電極之間時, 較大的電流係會流經處理電極與饋電電極之間,因而使處 理速率變得較快。加工處理量係藉由處理速率乘以加工處 理時間而得出。 該裝置復可包含電量監視器,以監視及測量在加工處 理進行期間的電量。如上所述,在一段固定加工處理時間 條件下所進行的電解加工處理中,加工處理量係視供應於 處理電極與饋電電極之間的電流值(或電壓值)而定。因 此,加工處理量便可藉由監視及測量供應至處理電極與饋 電電極之間的電量而測量出來。 該數值控制器係可根據工件在加工處理之前所測得之 形狀的座標數據與工件加工處理後所想要形成之形狀的座 標數據之間的座標差值來控制該電源,或者,該數值控制 器係可根據工件在加工處理期間所測得之形狀的座標數據 與工件所想要形成之形狀的座標數據之間的座標差值來控314269.ptd Page 16 2uUj〇H7i V. Description of the invention (11) The controller can numerically control the current (or voltage) supplied by the power source between the processing electrode and the feeding electrode, and the processing can be controlled in this way. Produces the desired shape of the workpiece after machining with high shape accuracy. The above-mentioned control is performed based on the electrolytic processing performed during the predetermined processing time and the condition of processing the workpiece by the processing electrode provided to face the workpiece, and the amount of processing is determined by the processing rate, so Depending on the value of the current (or voltage) supplied between the processing electrode and the feed electrode. In this regard, in this electrolytic processing, the processing rate becomes faster as the value of the current supplied between the processing electrode and the feeding electrode becomes larger. In addition, when a higher voltage is applied between the processing electrode and the feeding electrode, a larger current will flow between the processing electrode and the feeding electrode, thereby making the processing rate faster. The processing throughput is obtained by multiplying the processing rate by the processing time. The device may include a power monitor to monitor and measure the power during processing. As described above, in the electrolytic processing performed under a fixed processing time, the processing amount depends on the current (or voltage) supplied between the processing electrode and the feeding electrode. Therefore, the processing throughput can be measured by monitoring and measuring the amount of power supplied between the processing electrode and the feeding electrode. The numerical controller can control the power source according to the coordinate difference between the coordinate data of the shape measured before the processing of the workpiece and the coordinate data of the shape desired to be formed after the processing of the workpiece, or the numerical control The device can be controlled according to the coordinate difference between the coordinate data of the shape measured during the processing of the workpiece and the coordinate data of the shape desired to be formed by the workpiece.

314269.ptd 第17頁 2ϋϋj〇l|7| 五、發明說明(12) 尉該電源。 ^ 該數值控制器係可根據例如電量監視器所測得之電量 值來決定加工處理的結束時間,藉由如此決定處理的結束 時間,利用在加工處理量以及電量之間的關聯性,且藉由 ,監視及測量在加工處理期間所供應的電量,便可使加工處 理後之工件的所要形狀具有相當高的形狀精密度。 本發明亦提供另一種電解加工方法,包含:提供處理 電極、饋電電極以及離子交換器,該離子交換器係設置在 由固定座所固持之工件與處理電極之間之空間與該工件與 IP電電極之間之空間的至少其中一個空間中;使該處理電 極靠近或接觸該由固定座所固持之工件,同時由饋電電極 饋給電力至工件;供應流體至該工件與該處理電極及饋電 電極之至少其中一個之間的空間中,該空間中係存在有該 離子交換器;供應電能於該處理電極與饋電電極之間,同 時藉由數值控制器來數值化控制電壓及電流之至少其中一 者;以及使該由固定座所固持之工件與處理電極產生相對 運動,同時藉由數值控制器數值化控制該運動。 本發明上述及其他的目的、特徵以及優點,將可以由 K之說明,並配合所附之圖式,而獲得更深入之瞭解, ,在圖式中係示例性描述本發明之較佳實施例。 [實施方式] “ 本發明之較佳實施例現將參考圖式而說明如下。雖然 以下說明之實施例係以應用於一種電解加工裝置(電解研 磨裝置)為例來說明,該電解加工裝置係以基板作為待處314269.ptd Page 17 2ϋϋj〇l | 7 | V. Description of the invention (12) This power supply. ^ The numerical controller can determine the end time of the processing according to the power value measured by the power monitor, for example. By determining the end time of the processing in this way, the correlation between the processing amount and the power is used. Therefore, by monitoring and measuring the amount of power supplied during the processing process, the desired shape of the workpiece after processing can have a relatively high shape accuracy. The present invention also provides another electrolytic processing method, including: providing a processing electrode, a feeding electrode, and an ion exchanger. The ion exchanger is provided in a space between a workpiece and a processing electrode held by a fixed base, and the workpiece and IP. In at least one of the spaces between the electric electrodes; bringing the processing electrode close to or in contact with the workpiece held by the fixed seat, while feeding power to the workpiece by the feeding electrode; supplying fluid to the workpiece and the processing electrode and In the space between at least one of the feeding electrodes, the ion exchanger exists in the space; power is supplied between the processing electrode and the feeding electrode, and the voltage and current are numerically controlled by a numerical controller. At least one of them; and the relative movement between the workpiece and the processing electrode held by the fixed seat, and numerically controlling the movement by a numerical controller. The above and other objects, features, and advantages of the present invention will be described by K and the accompanying drawings for a deeper understanding. In the drawings, the preferred embodiments of the present invention are exemplarily described. . [Embodiment] "The preferred embodiment of the present invention will now be described with reference to the drawings. Although the embodiment described below is described by using an electrolytic processing device (electrolytic grinding device) as an example, the electrolytic processing device is Take the substrate as a place

314269.pid 第18頁 2ϋϋϋ〇117ί 五、發明說明(13) 理工件,並且將形成在基板表面上之銅清除(研磨),然 而,本發明亦可以應用於其他的工件以及其他的電解加工 處理中。314269.pid Page 18 2ϋϋϋ〇117ί 5. Description of the invention (13) The workpiece is processed, and the copper formed on the substrate surface is removed (ground). However, the invention can also be applied to other workpieces and other electrolytic processing. in.

第7及第8圖係顯示依照本發明之實施例的電解加工事 置3 6。此電解加工裝置3 6係包括基板固定座4 6以及一碟妒 :極部48’該基板固定座46係支撐在可以水平柩轉之樞』 是44之自由端,以吸住及固定住基板w,且使該基板w 面朝下(所謂的"面部朝下"方式),該電極部48俜定位 ,固定座46的正下方,其中該電極部儀由絕緣材 J 成。在電極部48中係埋設有扇形狀的處理電極5〇及 = 極52,其中該處理電極5〇及饋電電極52係交錯配貝包电 使該處理電極50及饋電電極52之表面(上表面)外二,且 薄膜狀離子交換器56係安裝在電極部 。出$。 住處理電才亟50及饋電電極52的表面。勺上表面,以覆蓋 實施例所採用之具有處理電極50及饋電電極以夕 亟部4 8僅係作為一實^,其中該電極部4 8的直徑Figures 7 and 8 show electrolytic processing positions 36 according to an embodiment of the present invention. This electrolytic processing device 36 includes a substrate fixing base 46 and a plate of jealousy: the pole part 48 ', the substrate fixing base 46 is supported on a pivot that can be turned horizontally "is the free end of 44 to hold and fix the substrate w, with the substrate w facing downward (the so-called "face-down" method), the electrode portion 48 俜 is positioned directly below the fixing base 46, and the electrode portion instrument is made of an insulating material J. A fan-shaped processing electrode 50 and a pole 52 are embedded in the electrode portion 48, and the processing electrode 50 and the feeding electrode 52 are staggered with a battery to make the surfaces of the processing electrode 50 and the feeding electrode 52 ( Top surface) Outer two, and the thin film ion exchanger 56 is mounted on the electrode portion. Out of $. The surface of the processing electrode 50 and the feeding electrode 52 is held. The upper surface of the spoon is to cover the processing electrode 50 and the feeding electrode used in the embodiment. The emergency portion 48 is only used as an example. The diameter of the electrode portion 48 is

之直彳二的兩倍,使得基板w的整個表面都可以受+ 工處理。 j电解 樞轉臂44係經由滾珠螺桿62而上下移動,其 J桿62係由馬it 6。所致動而作垂直運動,該柩轉臂:= Ϊ ϊ Ϊ轉軸桿66的上緣端’而該樞轉軸桿66則係由“ 64 =動而樞轉。基板固定座46係連接至馬達68而=達^ I忒馬達68係安裝在樞轉臂44之自由端,並且可以 = 動該用於轉動之馬達6 8而轉動。 精由It is twice as long as the second one, so that the entire surface of the substrate w can be processed by + processing. The j-electrolytic pivot arm 44 is moved up and down via a ball screw 62, and its J-rod 62 is powered by horse it 6. Acting for vertical movement, the 柩 rotating arm: = Ϊ ϊ Ϊthe upper edge end of the rotating shaft 66 ', and the pivoting shaft 66 is pivoted by "64 = moving. The base plate holder 46 is connected to the motor 68 而 = 达 ^ I 忒 Motor 68 is installed at the free end of the pivot arm 44 and can be rotated by rotating the motor 6 8 for rotation.

314269.ptd 第19頁314269.ptd Page 19

發明說明(⑷ 該—中i極部48係直接連接至中空馬達7〇,並且可藉由致動 18 a,二馬#達7 〇而轉動。在電極部4 8的中央部分係設有穿孔 好# °亥牙孔48a係用以作為純水供應部以供應純水,且最 # 純水。该穿孔4 8 3係連接至純水供應管7 2,該純水 ;=管72係垂直延伸於中空馬達7〇的内部,純水或超純水 :^、二由牙孔48a以及離子交換器56而供應至基板磾的整個加 處理表面。亦可提供複數個穿孔4 8 a,且每一穿孔4 §说 缸接至純水供應管7 2,以有助於處理液體分佈於基板w的 正個加工處理表面上。 ®此外’用以作為供應純水或超純水之純水供應部之純 水嘴嘴7 4係設置在電極部4 8的上方,該純水喷嘴7 4係延伸 於電極部48之徑向方向,且具有複數個供應孔口。因此, 純水或超純水係由基板W之上方及正下方來供應至基板…之 表面。在此所谓之純水係指具有不超過1 # S / c m之導電率 的水,而超純水則係指具有不超過〇· S/Cm之導電率的 欠’亦可以採用具有不超過500/z S/c m之導電率的液體或 者係任何電解溶液來取代純水。在本發明中所指的導電 率,係在25°C、1大氣壓力(atm)條件下的導電率。藉由在 K處理期間供應此液體,便可以消除加工處理時之不穩 素(諸如反應產物以及溶解的氣體),且處理流程能以 具有良好可重製性(reproducibility)之方式而一致地進 f行。 依照此實施例,複數扇葉狀電極板7 6係沿著周緣方向 而設置在電極部4 8中,且電源8 0之陽極與陰極係藉由集電Description of the invention (⑷ This-the middle i pole part 48 is directly connected to the hollow motor 70, and can be rotated by actuating 18 a, two horse # up to 70. The central part of the electrode part 48 is provided with a perforation好 # ° 海牙 孔 48a is used as a pure water supply department to supply pure water, and the most # pure water. The perforation 4 8 3 is connected to the pure water supply pipe 7 2, the pure water; = pipe 72 is vertical Extending inside the hollow motor 70, pure water or ultrapure water: ^, two are supplied to the entire processing surface of the substrate 由 from the perforations 48a and the ion exchanger 56. A plurality of perforations 4 8 a can also be provided, and Each perforation 4 § said that the tank is connected to the pure water supply pipe 72 to help the processing liquid be distributed on the processing surface of the substrate w. In addition, 'for pure water for supplying pure water or ultrapure water The pure water nozzle 74 of the supply part is disposed above the electrode part 48. The pure water nozzle 74 is extended in the radial direction of the electrode part 48 and has a plurality of supply orifices. Therefore, pure water or ultra Pure water is supplied to the surface of the substrate from above and directly below the substrate W. The so-called pure water here has no more than 1 # S / cm water, while ultrapure water refers to the lack of conductivity of not more than 0 · S / Cm '. It can also be a liquid with a conductivity of not more than 500 / z S / cm or any other An electrolytic solution is used instead of pure water. The conductivity referred to in the present invention is the conductivity at 25 ° C and 1 atmosphere pressure (atm). By supplying this liquid during the K treatment, the processing treatment can be eliminated. Time instability (such as reaction products and dissolved gases), and the processing flow can be performed in a consistent manner with good reproducibility. According to this embodiment, a plurality of fan-shaped electrode plates 7 6 series is provided in the electrode part 48 along the peripheral direction, and the anode and cathode of the power source 80 are collected by

第20頁 2uUj〇H7i 五、發明說明(15) 環7 8而交錯地連接至電極板7 6。連接至電源8 0之陰極的電 極板7 6係變成處理電極5 0,而連接至電源8 0之陽極的電極 板7 6則係變成饋電電極5 2。這可以應用於例如銅的處理, 因為銅的電解處理係在陰極側來進行。視欲加工處理之材 料而定,陰極側亦可以係饋電電極,而陽極側可以係處理 電極,詳言之,當欲處理之材料係銅、鉬、鐵或類似材料 時,電解處理係在陰極側來進行,因此,連接至電源8 0之 陰極的電極板7 6應該為處理電極5 0,而連接至電源8 0之陽 極之電極板7 6則應該為饋電電極52。在另一方面,在紹、 矽或類似材料的例子中,電解處理係在陽極側進行,因 此,連接至電源之陽極的電極板應該為處理電極,而連接 至陰極的電極板則應該為饋電電極。 因此,藉由將處理電極5 0及饋電電極5 2分開且交錯地 配置在電極部4 8之周緣方向上,便可以不需要將用以供應 電流之饋電部分固定至基板之導電薄膜(待處理部分)上, 而可以在基板之整個表面上進行加工處理。此外,藉由以 一種脈衝方式來改變正負極,便可以將電解產物加以分 解,且藉由多工重複處理可以增進處理表面之平整度。 針對處理電極5 0及饋電電極5 2而言,由於電解反應所 造成之氧化或分解係一個主要的問題。有鑑於此,最好係 採用碳、較不具有活性之貴金屬、導電性氧化物或導電性 陶材來作為饋電電極5 2之基本材料,而非一般廣泛使用為 電極材料的金屬化合物。舉例來說,可以藉由在鈦電極上 電鍍或鍍覆鉑或銥,然後以高溫燒結鍍覆之電極以使電極Page 20 2uUj〇H7i V. Description of the invention (15) The ring 7 8 is connected to the electrode plate 76 in a staggered manner. The electrode plate 76 connected to the cathode of the power source 80 becomes the processing electrode 50, and the electrode plate 76 connected to the anode of the power source 80 becomes the feeding electrode 52. This can be applied to, for example, copper treatment because the electrolytic treatment of copper is performed on the cathode side. Depending on the material to be processed, the cathode side can also be a feed electrode, and the anode side can be a processing electrode. In particular, when the material to be processed is copper, molybdenum, iron or similar materials, the electrolytic treatment is performed at The cathode electrode plate 76 connected to the cathode of the power source 80 should be the processing electrode 50, and the electrode plate 76 connected to the anode of the power source 80 should be the feed electrode 52. On the other hand, in the case of Shao, silicon or similar materials, the electrolytic treatment is performed on the anode side. Therefore, the electrode plate connected to the anode of the power source should be the processing electrode, and the electrode plate connected to the cathode should be the feed electrode. Electric electrode. Therefore, by arranging the processing electrodes 50 and the feeding electrodes 52 separately and staggered in the circumferential direction of the electrode portion 48, there is no need to fix the conductive film for supplying current to the conductive film of the substrate ( Part to be processed), and the entire surface of the substrate can be processed. In addition, by changing the positive and negative electrodes in a pulsed manner, the electrolytic products can be decomposed, and the flatness of the treated surface can be improved by multiplexing and repeating the treatment. For the processing electrode 50 and the feeding electrode 52, oxidation or decomposition due to electrolytic reaction is a major problem. In view of this, it is preferable to use carbon, a less active precious metal, a conductive oxide, or a conductive ceramic material as the basic material of the feeding electrode 52 instead of a metal compound generally widely used as an electrode material. For example, the electrode can be made by electroplating or plating platinum or iridium on a titanium electrode and then sintering the plated electrode at a high temperature.

314269.ptd 第21頁 2uUj〇H7i 五、發明說明(16) 穩定並強化之,如此便可以得到貴金屬電極。陶材產品通 常“係可以藉由熱處理無機原料而形成,且具有各種不同特 性之陶材產品係可以由各種不同的原料所製成,包括金屬 及非金屬的氧化物、碳化物以及氮化物等原料。在這些原 ,料當中,陶材係具有導電率,當電極氧化時,電阻值通常 會增加而造成供應電壓的增加。然而,藉由以諸如鉑之非 /氧化性材料或以諸如氧化銥之導電性氧化物來保護電極之 表面,便可以避免因電極之基本材料之氧化所造成之導電 率的降低。 ® 離子交換器5 6可以為具有陰離子交換基或陽離子交換 基之不織布,陽離子交換器最好係具有強酸性陽離子交換 基(硫酸基);然而,亦可以採用具有弱酸性陽離子交換基 (羧酸基)之陽離子交換器。雖然陰離子交換器最好係具有 強鹼性陰離子交換基(四基銨基),然而,亦可以採用具有 弱鹼性陰離子交換基(三基或更低的氨基基)。 具有強鹼性陰離子交換基之不織布係藉由例如以下之 方法所製成:具有纖維直徑為2 0至5 0微米(// m)且滲透率 為9 0 %之聚烯烴不織布係經過所謂的射線嫁接聚合化處理 (j^a d i a t i ο n graft polymerizafion)5 其中包含將仿口偈射 照射在不織布上,然後再嫁接聚合化,藉此導入嫁接 鏈;然後,將如此導入之嫁接鏈予以胺化,以將四基胺基 4導入於其中。導入之離子交換基的容積係由導入之嫁接鏈 的量值所決定,該嫁接聚合化係可以藉由使用諸如丙烯 酸、苯乙烯、胺基乙酸甲基丙烯酸酯、硫化苯乙烯鈉或氯314269.ptd Page 21 2uUj〇H7i V. Description of the invention (16) Stabilize and strengthen it so that noble metal electrodes can be obtained. Ceramic products are usually "made by heat-treatment of inorganic raw materials, and ceramic products with various characteristics can be made from a variety of different raw materials, including metal and non-metal oxides, carbides and nitrides. Raw materials. Among these materials, ceramics have electrical conductivity. When the electrodes are oxidized, the resistance value usually increases and causes the supply voltage to increase. However, by using non- / oxidizing materials such as platinum or The conductive oxide of iridium protects the surface of the electrode, so as to avoid the decrease in conductivity caused by the oxidation of the basic material of the electrode. ® Ion exchanger 56 can be a non-woven fabric with anion exchange group or cation exchange group, cation The exchanger preferably has a strongly acidic cation exchange group (sulfate group); however, a cation exchanger with a weakly acidic cation exchange group (carboxylic acid group) can also be used. Although the anion exchanger preferably has a strongly basic anion exchange (Tetrayl ammonium), however, it is also possible to use a weakly basic anion exchange group (tri- or lower) Amino group). The non-woven fabric having a strong basic anion exchange group is made by, for example, the following method: a polyolefin having a fiber diameter of 20 to 50 microns (// m) and a permeability of 90% The non-woven fabric is subjected to a so-called graft graft polymerization (j ^ adiati ο n graft polymerizafion) 5, which includes irradiating imitation mouth onto the non-woven fabric, and then grafting and polymerizing, thereby introducing the graft chain; then, introducing the The graft chain is aminated to introduce the tetrakisamino group 4 into it. The volume of the ion-exchange group introduced is determined by the amount of the graft chain introduced. The graft polymerization system can be used by using such as acrylic acid, styrene, etc. , Aminoacetic acid methacrylate, sodium styrene sulfide, or chlorine

314269.ptd 第22頁 2uUj〇H7i 五、發明說明(17) 甲基苯乙稀之單體來進行。嫁接鏈之量值係可以藉由調整 該單體濃度、反應溫度以及反應時間來加以控制。因此, 嫁接的程度(即不織布在嫁接聚合化之後的重量與不織布 在嫁接聚合化之前的重量的比值)最大係可達5 0 0 %。因 此,在嫁接聚合化之後導入的離子交換基的容積最大係可 達 5meq/g 〇 具有強酸性陽離子交換基之不織布可以由以下之方法 來製備:與具有強鹼性陰離子交換基之不織布的情況一 樣,具有纖維直徑為2 0 - 5 0微米且滲透率為9 0 %之聚烯烴不 織布係經過所謂的射線嫁接聚合化處理,其中包含將伽偈 射線照射在不織布上,然後再嫁接聚合化,藉此導入嫁接 鏈;如此導入之嫁接鏈接著便以熱硫酸來加以處理,以將 硫酸基導入於其中,若嫁接鏈係由熱磷酸所處理,則便可 以將磷酸導入。嫁接的程度最大係可以達5 0 0 %,且在嫁接 聚合化之後所導入之離子交換基的容積最大係可達 5meq/g 〇 離子交換器5 6之基本材料可以係聚烯烴,諸如聚乙烯 或聚丙烯,或者係任何其他的有機聚合體。此外,除了不 織布之型式以外,該離子交換器亦可以係織布、紙片、滲 透性材料、網狀或短纖維等等的型式。 當使用聚乙烯或聚丙烯作為基本材料時,嫁接聚合化 係可以藉由先在基本材料上照射(預先照射)放射線(伽偈 射線或電子束)以藉此產生自由基(r a d i c a 1 ),然後使自由 基與單體反應,藉此,便可以得到具有極少雜質的均句嫁314269.ptd Page 22 2uUjOH7i V. Description of the invention (17) Carrying out of methyl styrene monomer. The amount of graft chain can be controlled by adjusting the monomer concentration, reaction temperature and reaction time. Therefore, the degree of grafting (that is, the ratio of the weight of the non-woven fabric after the graft polymerization to the weight of the non-woven fabric before the graft polymerization) can reach a maximum of 500%. Therefore, the maximum volume of ion exchange groups introduced after graft polymerization can reach 5 meq / g. Nonwoven fabrics with strongly acidic cation exchange groups can be prepared by the following methods: In the case of nonwoven fabrics with strong basic anion exchange groups Similarly, a polyolefin nonwoven fabric having a fiber diameter of 20 to 50 microns and a permeability of 90% is subjected to a so-called radiation graft polymerization process, which includes irradiating gamma rays on the nonwoven fabric, and then grafting polymerization. The graft chain is introduced by this; the graft chain thus introduced is treated with hot sulfuric acid to introduce the sulfuric acid group into it, and if the graft chain is treated with hot phosphoric acid, phosphoric acid can be introduced. The degree of grafting can be up to 500%, and the volume of ion-exchange groups introduced after graft polymerization can reach up to 5meq / g. The basic material of ion exchanger 56 can be polyolefin, such as polyethylene. Or polypropylene, or any other organic polymer. In addition, in addition to the type of non-woven fabric, the ion exchanger can also be of the type of woven fabric, paper, permeable material, mesh or short fiber, and the like. When polyethylene or polypropylene is used as the basic material, the graft polymerization system can generate (radica 1) radiation (radia 1) by irradiating (pre-irradiating) radiation (gray rays or electron beams) on the basic material first, and then By reacting free radicals with monomers, homogeneous compounds with very few impurities can be obtained

314269.ptd 第23頁 2uUj〇H7| 五、發明說明(18) 接鏈。在另一方面,當採用聚烯烴以外之有機聚合體來作 為基本材料時,可以藉由在基本材料中植入單體而進行自 由基聚合,然後在基本材料上照射(同步照射)放射性射線 (伽偈射線、電子束或紫外線)。雖然此方法無法提供均勻 ,的嫁接鏈,然而其可以應用於相當廣泛不同的基本材料。 藉由使用具有陰離子交換能力或陽離子交換能力之不 1織布來作為離子交換器5 6,便可使純水或超純水或者諸如 電解溶液之液體在該不織布中自由地移動,並且可以很容 易地到達在該不織布中具有可將水解離之催化反應的反應 IP,使得許多水分子可以解離成氫離子以及氫氧離子。此 外,藉由使純水或超純水或者諸如電解溶液之液體移動, 由於水解離所產生之氫氧離子便可以有效地帶往處理電極 5 0之表面,藉此,即使施加較低電壓的情況下仍可以獲得 相當南的電流。 當離子交換器5 6係僅具有陰離子交換能力或陽離子交 換能力其中一者時,在可電解處理的材料上便會有所限 制,且除此之外,雜質亦有可能會因為極性而產生。為了 解決此一問題,離子交換器5 6係可具有一種結構,該離子 ^換器5 6中具有陰離子交換能力之陰離子交換器以及具有 ,離子交換能力之陽離子交換器係集中地配置在一起,以 構成整體結構。該陰離子交換器以及陽離子交換器係可疊 <置在基板之待處理表面上,亦可將每一個陰離子交換器以 及陽離子交換器製造成扇葉的形狀,且將其交錯配置。或 者,離子交換器5 6本身可同時具有陰離子交換基以及陽離314269.ptd Page 23 2uUj〇H7 | V. Description of the invention (18) Linking. On the other hand, when an organic polymer other than polyolefin is used as a basic material, radical polymerization can be performed by implanting monomers in the basic material, and then the base material is irradiated (synchronized) with radioactive rays (synchronous irradiation) ( Gamma rays, electron beams or ultraviolet rays). Although this method cannot provide a homogeneous graft chain, it can be applied to a fairly wide range of different basic materials. By using a woven fabric having anion exchange capacity or cation exchange capacity as the ion exchanger 5 6, pure water or ultrapure water or a liquid such as an electrolytic solution can be freely moved in the woven fabric, and can be very It is easy to reach a reaction IP having a catalytic reaction capable of hydrolyzing the ion in the non-woven fabric, so that many water molecules can be dissociated into hydrogen ions and hydroxide ions. In addition, by moving pure water or ultra-pure water or a liquid such as an electrolytic solution, the hydroxide ion generated by the hydrolyzed ion can be effectively brought to the surface of the processing electrode 50, thereby, even in the case of applying a lower voltage Can still get quite south current. When the ion exchanger 5 6 series has only one of anion exchange capacity or cation exchange capacity, there are restrictions on the materials that can be electrolytically treated, and in addition, impurities may be generated due to polarity. In order to solve this problem, the ion exchanger 56 may have a structure in which the anion exchanger having anion exchange capability and the cation exchanger having ion exchange capability are collectively arranged together. To form the overall structure. The anion exchanger and the cation exchanger can be stacked on the surface to be processed of the substrate, and each anion exchanger and the cation exchanger can also be made into the shape of a fan blade and arranged in a staggered arrangement. Alternatively, the ion exchanger 5 6 itself may have both an anion exchange group and an anion ion.

314269.ptd 第24頁 2uUj〇H7i 五、發明說明(19) 子交換基。此離子交換器亦可包括兩性(a m p h ◦ t e r i c )(酸 性及鹼性)的離子交換器,其中該陰離子交換基以及陽離 子交換基係任意分佈,或者該離子交換器係可包括雙極性 (bipolar)離子交換器,其中該陰離子交換基以及陽離子 交換基係以層型式存在,或者該離子交換器係可包括一種 馬賽克式(m 〇 s a i c )離子交換器,包含有陰離子交換基的部 分以及包含有陽離子交換基之部分係平行地存在於厚度方 向。附帶一的是,亦可以依照欲處理之材料而選擇性地使 用具有陰離子交換能力或具有陽離子交換能力的離子交換 器56。 電解加工裝置3 6係設有控制器1 0 0,該控制器1 0 0係控 制電源8 0,以使電源8 0可以任意地控制由該電源8 0供應至 處理電極5 0及饋電電極5 2之間的電壓與電流值之至少其中 一者。電解加工裝置3 6亦具有電流量積算器(庫舍 計)1 0 2,該電流量積算器1 0 2係連接至由電源8 0之陽極延 伸而出的電線以偵測電流值,並決定出由電流值與處理時 間相乘所得出的電量,且累加該電量以決定出所使用的總 電量。由電流量積算器1 0 2所輸出之輸出信號係輸入至控 制器1 0 0中,而由控制器1 0 0所輸出之輸出信號則係輸入至 電源8 0。 此外,依照本實施例,由電源8 0之陽極及陰極所延伸 出之電線係連接至控制器1 0 0,且由控制器1 0 0所輸出之輸 出信號係輸入至該馬達6 0而用於垂直運動,藉此,供應於 處理電極5 0及饋電電極5 2之間的電流便可控制在固定值。314269.ptd Page 24 2uUj〇H7i V. Description of the invention (19) Subexchange base. The ion exchanger may also include amphoteric (acid and basic) ion exchangers, in which the anion exchange group and the cation exchange group are randomly distributed, or the ion exchanger system may include bipolar Ion exchanger, wherein the anion exchange group and the cation exchange group exist in a layer type, or the ion exchanger system may include a mosaic type (mosaic) ion exchanger, including a portion containing an anion exchange group and a cation Part of the exchange base exists in the thickness direction in parallel. Incidentally, it is also possible to selectively use an ion exchanger 56 having anion exchange capacity or cation exchange capacity depending on the material to be processed. The electrolytic processing device 36 is provided with a controller 100, and the controller 100 controls the power source 80 so that the power source 80 can arbitrarily control the supply of the processing electrode 50 and the feeding electrode from the power source 80. 5 At least one of voltage and current between 2 The electrolytic processing device 36 also has a current amount accumulator (court meter) 102, which is connected to a wire extended from the anode of the power source 80 to detect the current value and determine The electric power obtained by multiplying the current value and the processing time is accumulated, and the electric power is accumulated to determine the total electric power used. The output signal output by the current totalizer 102 is input to the controller 100, and the output signal output from the controller 100 is input to the power source 80. In addition, according to this embodiment, the wires extending from the anode and cathode of the power source 80 are connected to the controller 100, and the output signal output by the controller 100 is input to the motor 60 for use. In vertical movement, the current supplied between the processing electrode 50 and the feeding electrode 52 can be controlled at a fixed value.

314269.ptd 第25頁 2uUj〇H7i 五、發明說明(20) 當將供應於處理電極5 0及饋電電極5 2之間的電流控制在固 定Ί直時,供應至處理電極5 0及饋電電極5 2之間的電流值係 由.電源8 0所延伸出之電線所測得。舉例來說,當電流值降 低時,便可驅動用於垂直運動之馬達6 0來降下該基板固定 .座4 6,以減少在基板W與處理電極5 0及饋電電極5 2之間的 距離,藉此將電流值控制在固定值。 1 此外,如第8圖所示,亦提供用以再生離子交換器5 6 之再生部8 4。該再生部8 4係包含具有大致相同於枢轉臂4 4 之結構的可旋擺臂8 6,該枢轉臂8 6係用以固持該基板固定 J^4 6,並且定位在電極部4 8上之可樞轉臂4 4對面的正對側 上,且再生頭8 8係由可旋擺臂8 6之自由端所固定。在操作 上,相反於加工處理之電位(electric potential),係由 該電源8 0供應至離子交換器5 6 (參照第7圖),藉此便可促 進外界物質的分解,諸如附著在離子交換器5 6中之銅。因 此,在加工處理期間,亦可進行該離子交換器5 6的再生操 作。經再生之離子交換器5 6係可以由供應至電極部4 8之上 表面的純水或超純水所清洗。 接下來,將說明由電解加工裝置3 6所進行的電解加工 ^理。 首先,基板W,諸如在第1 B圖中所示之在其表面上具 有銅薄膜6作為導體薄膜(待處理部分)的基板W,係由電解 ‘加工裝置3 6之基板固定座4 6所吸住並固持住,且該基板固 定座4 6係由枢轉臂4 4移動至位在電極部4 8正上方的加工處 理位置。接著,基板固定座4 6便藉由馬達6 0所降下而進行314269.ptd Page 25 2uUj〇H7i V. Description of the invention (20) When the current supplied between the processing electrode 50 and the feeding electrode 52 is controlled to be fixed and straight, it is supplied to the processing electrode 50 and the feeding The current value between the electrodes 52 is measured by a wire extending from the power source 80. For example, when the current value is reduced, the motor 60 for vertical movement can be driven to lower the substrate fixing. The seat 4 6 can reduce the distance between the substrate W and the processing electrode 50 and the feeding electrode 52. Distance, thereby controlling the current value to a fixed value. 1 In addition, as shown in FIG. 8, a regeneration section 8 4 for regenerating the ion exchanger 5 6 is also provided. The regenerating portion 8 4 includes a rotatable swing arm 8 6 having a structure substantially the same as that of the pivoting arm 4 4. The pivoting arm 8 6 is used to hold the substrate fixed J ^ 4 6 and is positioned at the electrode portion 4. The pivotable arm 4 on 8 is on the opposite side, and the regeneration head 8 8 is fixed by the free end of the swingable swing arm 8 6. In operation, the electric potential, which is opposite to the processing, is supplied from the power source 80 to the ion exchanger 5 6 (refer to Figure 7), thereby facilitating the decomposition of external substances, such as adhesion to the ion exchange Copper in the device 5 6. Therefore, the regeneration operation of the ion exchanger 56 can also be performed during processing. The regenerated ion exchanger 56 can be cleaned by pure water or ultrapure water supplied to the upper surface of the electrode portion 48. Next, the electrolytic processing performed by the electrolytic processing apparatus 36 will be described. First, a substrate W, such as the substrate W shown in FIG. 1B, having a copper film 6 on its surface as a conductor film (the portion to be processed) is a substrate holder 4 6 of an electrolytic processing device 3 6 It is sucked and held, and the substrate fixing base 4 6 is moved by the pivot arm 4 4 to a processing position located directly above the electrode portion 48. Next, the substrate holder 4 6 is lowered by the motor 60.

314269.ptd 第26頁 2uUj〇I|7| 五、發明說明(21) 垂直運動,使得由基板固定座4 6所固持之基板W可以接觸 或靠近離子交換器5 6之表面,其中該離子交換器5 6係安裝 在電極部4 8之上表面上。 接下來,當該基板固定座4 6與電極部4 8轉動時,由電 源8 0施加隨時間改變之預定電壓或電流值至處理電極5 0及 饋電電極5 2之間,在此同時’純水或超純水係透過穿孔 4 8 a而由電極部4 8的正下方供應至該電極部4 8上表面, 且,純水或超純水係同時透過純水喷嘴7 4而由電極部4 8的 上方供應至電極部4 8的上表面,藉此將純水或超純水充滿 該介於處理電極5 0及饋電電極5 2與基板W之間的空間。藉 此,、形成在基板W上之導體薄膜(銅薄膜6 )便可以藉由在離 子交換器5 6中所產生的氫離子或氫氧離子來進行電解加工 處理。依照上述的電解加工裝置3 6,藉由使純水或超純水 流入離子交換器5 6中,便可產生大量的氫離子或氫氧離 子,且大量的此類離子係可供應至基板W的表面,藉此便 可更有效率地進行電解加工處理。 詳言之,藉由會純水或超純水流入至離子交換器5 6 中,足夠的水量便可以供應至功能基中(在具有強酸性陽 離子交換基之離子交換器的例子中,該功能基係指硫酸 基),以藉此增加解離之水分子數量,且藉由在導體薄膜 (銅薄膜6 )以及氫氧離子(或氫氧基)之間的反應所形成之 反應產物(包括氣體)係可以藉由水流而清除,藉此便可以 提升處理的效率。因此,便有需要使純水或超純水流動, 且此水的流動應保持固定且均勻。水流動之固定性及均勻314269.ptd Page 26 2uUjI | 7 | V. Description of the invention (21) The vertical movement allows the substrate W held by the substrate holder 46 to contact or approach the surface of the ion exchanger 56, where the ion exchange The device 5 6 is mounted on the upper surface of the electrode portion 48. Next, when the substrate holder 46 and the electrode portion 48 are rotated, a predetermined voltage or current value that changes with time is applied by the power source 80 between the processing electrode 50 and the feeding electrode 52, and at the same time, ' Pure water or ultrapure water is supplied to the upper surface of the electrode portion 48 from directly below the electrode portion 48 through the perforation 4 8 a, and pure water or ultrapure water is passed through the pure water nozzle 74 at the same time from the electrode. The upper portion of the portion 48 is supplied to the upper surface of the electrode portion 48, thereby filling the space between the processing electrode 50 and the feeding electrode 52 and the substrate W with pure water or ultrapure water. Thereby, the conductor film (copper film 6) formed on the substrate W can be subjected to electrolytic processing by hydrogen ions or hydroxide ions generated in the ion exchanger 56. According to the above-mentioned electrolytic processing device 36, a large amount of hydrogen ions or hydroxide ions can be generated by flowing pure water or ultrapure water into the ion exchanger 56, and a large number of such ion systems can be supplied to the substrate W Surface, which can be more efficient for electrolytic processing. In detail, by flowing pure or ultrapure water into the ion exchanger 5 6, a sufficient amount of water can be supplied to the functional group (in the case of an ion exchanger having a strongly acidic cation exchange group, this function The radical refers to the sulfate group), thereby increasing the number of dissociated water molecules, and the reaction products (including gases) formed by the reaction between the conductor film (copper film 6) and hydroxide ions (or hydroxide). ) Can be removed by water flow, which can improve the efficiency of processing. Therefore, it is necessary to make pure water or ultrapure water flow, and the flow of this water should be kept fixed and uniform. Fixed and uniform water flow

314269.ptd 第27頁 2uUj〇H7i 五、發明說明(22) 性將可產生離子供應以及反應產物之清除的固定性及均勻 性,進而使處理過程可以固定且均勻地進行。 . 在電解加工處理期間,由電源8 0供應至處理電極5 0及 饋電電極5 2之間的電流與電壓的至少其中一者係隨著時間 •而改變以下將參考第9至第1 5圖來舉例說明。 第9圖係顯示在處理電極5 0及饋電電極5 2之間供應具 有步階遞減值之固定電壓的一個實例。詳言之,在加工處 理的初始階段,高固定電壓V係供應於處理電極5 0及饋電 電極5 2之間。當由電流乘以加工處理時間所決定之電量 ϋ示在第9圖之暗影部分以及後續的圖式中)達到預定值 時(在時間t 〇,小於固定電壓V &固定電壓V孫供應至處理 電極5 0及饋電電極5 2之間。當電力的總量到達預定值時 (在時間12),小於固定電壓V式固定電壓V #供應於處理電 極5 0及饋電電極5 2之間。再者,當電力的總量到達預定值 時(在時間13),小於固定電壓V &固定電壓V 4係供應於處理 電極5 0及饋電電極5 2之間。當電力總量達到預定值時(在 時間14),亦即在處理的結束時間,則加工處理程序便結 束。 藉由在加工處理的初始階段供應高固定電壓且接著在 ..力處理到達處理的結束時間時而在處理電極5 0及饋電電 極5 2之間供應具有步階遞減值的較低固定電壓,以進行電 ‘解加工處理,便可在加工處理的初始階段獲得處理速率, 且避免發生所謂的過度蝕刻。 雖然在此一實例中,在處理電極5 0及饋電電極5 2之間314269.ptd Page 27 2uUj〇H7i V. Description of the invention (22) The stability and uniformity of the ion supply and the removal of reaction products will be generated, so that the processing can be performed uniformly and uniformly. During the electrolytic processing process, at least one of the current and voltage supplied by the power source 80 to the processing electrode 50 and the feeding electrode 52 is changed over time. The following will refer to the ninth to the first 5 Illustration to illustrate. Fig. 9 shows an example in which a fixed voltage having a step-down value is supplied between the processing electrode 50 and the feeding electrode 52. In detail, in the initial stage of the processing, a high fixed voltage V is supplied between the processing electrode 50 and the feeding electrode 52. When the amount of electricity determined by multiplying the current by the processing time is shown in the shaded part of Figure 9 and subsequent figures, when it reaches a predetermined value (at time t 〇, less than the fixed voltage V & the fixed voltage V is supplied to Between the processing electrode 50 and the feeding electrode 52. When the total amount of power reaches a predetermined value (at time 12), it is smaller than the fixed voltage V and the fixed voltage V # is supplied to the processing electrode 50 and the feeding electrode 52 Moreover, when the total amount of power reaches a predetermined value (at time 13), it is smaller than the fixed voltage V & the fixed voltage V 4 is supplied between the processing electrode 50 and the feeding electrode 52. When the total amount of power When the predetermined value is reached (at time 14), that is, at the end time of the processing, the processing processing program ends. By supplying a high fixed voltage in the initial stage of the processing and then when the force processing reaches the end time of the processing By supplying a lower fixed voltage with a step-down value between the processing electrode 50 and the feeding electrode 52 to perform the electrical processing, the processing rate can be obtained in the initial stage of the processing, and the so-called Excessive eclipse In this example, although between the feed electrode 50 and the processing electrode 52

314269.ptd 第28頁 2uUj〇H7i 五、發明說明(23) 係供應具有步階遞減值之固定電壓,然而,亦可在處理電 極5 0及饋電電極5 2之間供應具有步階遞減值的固定電流。 第1 0圖係顯示在處理電極5 0及饋電電極5 2之間首先供 應具有連續變化值之電流,然後供應具有連續變化值之固 定電壓的一個實例,詳言之,在處理電極5 0及饋電電極5 2 之間係先供應具有步階遞減值(在第1 0圖中係兩步階)之固 定電流,然後供應具有步階遞減值(在第1 0圖中係兩步階) 之固定電壓。更詳細地說,在加工處理的初始階段,在處 理電極5 0及饋電電極5 2之間係供應高固定電流I !,當由電 流值乘以電壓值所決定之電量係達到預定值時(在時間13 ),低於固定電流I A固定電流I 2係供應至處理電極5 0及饋 電電極5 2之間。當電力總量已達預定值時(在時間16),固 定電壓V 系供應至處理電極5 0及饋電電極5 2之間。此外, 當電力總量達到預定值時(在時間17),低於固定電壓V象 固定電壓V係供應至處理電極5 0及饋電電極5 2之間。當電 力總量已達預定值(時間18)時,亦即到達處理的結束時間 時,加工處理便結束。 上述對於電壓及電流的控制,係可針對以控制之固定 電流值所進行之電解加工處理的處理速率先作一步階變 化,然後再針對以控制之固定電壓值所進行之電解加工處 理的處理速率進行步階變化。此外,亦可針對當工件之加 工處理面積不再有變化時之加工處理階段,以連續固定電 流來進行電解加工處理,藉此便可連續保持固定的處理速 率,並且有助於處理速率的控制,然後當加工處理面積急314269.ptd Page 28 2uUj〇H7i V. Description of the invention (23) is to supply a fixed voltage with a step-down value, however, it is also possible to supply a step-down value between the processing electrode 50 and the feed electrode 52. Fixed current. FIG. 10 shows an example in which a current having a continuously varying value is first supplied between the processing electrode 50 and the feeding electrode 52, and then a fixed voltage having a continuously varying value is supplied. Specifically, in the processing electrode 50, And the feeding electrode 5 2 are first supplied with a fixed current having a step-decreasing value (two steps in FIG. 10), and then supplying a step-decreasing value (two steps in FIG. 10) ) Fixed voltage. In more detail, at the initial stage of the processing, a high fixed current I! Is supplied between the processing electrode 50 and the feeding electrode 52, and when the amount of electricity determined by multiplying the current value by the voltage value reaches a predetermined value (At time 13), a fixed current I 2 lower than the fixed current IA is supplied between the processing electrode 50 and the feeding electrode 52. When the total amount of power has reached a predetermined value (at time 16), the fixed voltage V is supplied between the processing electrode 50 and the feeding electrode 52. In addition, when the total amount of power reaches a predetermined value (at time 17), a voltage lower than the fixed voltage V is supplied between the processing electrode 50 and the feeding electrode 52. When the total amount of power has reached the predetermined value (time 18), that is, when the end time of the processing has been reached, the processing is ended. The above-mentioned control of voltage and current can be changed step by step for the processing rate of electrolytic processing at a controlled fixed current value, and then the processing rate of electrolytic processing at a controlled fixed voltage value Make step changes. In addition, it can also perform electrolytic processing with a constant fixed current for the processing stage when the processing area of the workpiece no longer changes. This can continuously maintain a fixed processing rate and help control the processing rate. , And then when the processing area is urgent

314269.ptd 第29頁 2uUj〇H7i 五、發明說明(24) 邊減少而使加工處理接近結束時間時,再以連續的固定電 壓~來進行電解加工處理,俾有助於接近結束時間之加處理 速率的控制。 雖然在第1 0圖的實例中,具有變化值之固定電流係以 ,複數個步階來供應,然後亦以複數個步階來供應具有變化 值之固定電壓,然而亦可以先供應一段時間之未具有變化 4值的電流來進行加工處理(固定電流處理),然後再供應一 段時間之未具有變化值的電壓來進行加工處理(固定電壓 處理)。亦可以重複進行複數次的固定電流處理/固定電壓 Θ里循環。此外,亦可以先供應未具有變化值之固定電 流,然後供應具有複數個步階變化值之固定電壓,或者相 反地,先供應具有複數個步階變化值之固定電流,然後再 供應未具有變化值之固定電壓。 第1 1圖係顯示在處理電極5 0及饋電電極5 2之間先供應 固定電壓,然後再遞減供應至處理電極5 0及饋電電極5 2之 間的電壓之貫例。詳言之,先在處理電極5 0及饋電電極5 2 之間供應高固定電壓V 7,當由電流值乘以加工處理時間所 決定之電量已達預定值時(在時間19),供應於處理電極5 0 及電電極5 2之間的電壓便可逐漸地降低。當總電量已達 ,預I值時(在時間t 1Q),亦即達到處理的結束時間時,加工 處理便結束。 ' 藉由在加工處理的初始階段來供應固定電壓,然後隨 著加工處理的進行來逐漸地減少電壓,便可以在加工處理 的初始階段得到處理速率,然後隨著加工處理接近處理的314269.ptd Page 29 2uUj〇H7i V. Description of the Invention (24) When the processing time is reduced and the processing is near the end time, the electrolytic processing is performed with a continuous fixed voltage ~, which helps to add processing near the end time. Rate control. Although in the example in FIG. 10, a fixed current having a varying value is supplied in a plurality of steps, and then a fixed voltage having a varying value is also provided in a plurality of steps, however, it may be supplied for a period of time. A current without a change in value of 4 is used for processing (fixed current processing), and then a voltage without a change in value is supplied for a period of time for processing (fixed voltage processing). It is also possible to repeat the cycle of fixed current processing / fixed voltage Θ multiple times. In addition, it is also possible to first supply a fixed current without a change value, and then supply a fixed voltage with a plurality of step changes, or conversely, first supply a fixed current with a plurality of step changes, and then supply no change Fixed voltage. Fig. 11 shows a conventional example in which a fixed voltage is first supplied between the processing electrode 50 and the feeding electrode 52, and then the voltage supplied between the processing electrode 50 and the feeding electrode 52 is decreased. In detail, a high fixed voltage V 7 is first supplied between the processing electrode 50 and the feeding electrode 5 2. When the amount of electricity determined by multiplying the current value by the processing time has reached a predetermined value (at time 19), the supply The voltage between the processing electrode 50 and the electrical electrode 52 can be gradually reduced. When the total power has reached the pre-I value (at time t 1Q), that is, when the end time of the processing is reached, the processing is ended. '' By supplying a fixed voltage at the initial stage of the processing, and then gradually reducing the voltage as the processing progresses, the processing rate can be obtained at the initial stage of the processing, and then as the processing approaches the processing

314269.ptd 第30頁 2uUj〇H7i 五、發明說明(25) 結束時間而逐漸地降低處理速率,藉此便可避免發生所謂 的過度蝕刻。 第1 2圖係顯示在處理電極5 0及饋電電極5 2之間先供應 固定電流,然後再遞減供應至處理電極5 0及饋電電極5 2之 間的電流之實例。詳言之,先在處理電極5 0及饋電電極5 2 之間供應高固定電流I 3,當由電流值乘以加工處理時間所 決定之電量已達預定值時(在時間t! 〇,供應於處理電極5 0 及饋電電極5 2之間的電流便可逐漸地降低。當總電量已達 預定值時(時間t 12),亦即達到處理的結束時間時,加工處 理便結束。 藉由此種控制電流的方式,亦可如上所述獲得處理速 率並且避免發生過度蝕刻的情況。 第1 3圖係顯示一實例,係先在處理電極5 0及饋電電極 5 2之間供應固定電流,然後逐漸地減少供應至處理電極5 0 及饋電電極5 2之間的電流,最後在接近處理的結束時間 時,在處理電極5 0及饋電電極5 2之間供應固定的低電壓。 詳言之,在處理電極5 0及饋電電極5 2之間係先供應高固定 電流I 4,當由電流值乘以加工處理時間所決定的電量已達 預定值時(在時間t 13),便可將供應於處理電極5 0及饋電電 極5 2之間的電流逐漸地降低。當總電量達到預定值時(在 時間114),在處理電極5 0及饋電電極5 2之間供應固定的低 電壓V 8;當總電量達到預定值時(在時間115),亦即達到處 理的結束時間時,便結束加工處理。此控制方法有助於控 制在接近處理的結束時間時的處理速率。314269.ptd Page 30 2uUj〇H7i V. Description of the Invention (25) The end time and gradually reduce the processing rate, so as to avoid the so-called over-etching. Fig. 12 shows an example in which a fixed current is first supplied between the processing electrode 50 and the feeding electrode 52, and then the current supplied between the processing electrode 50 and the feeding electrode 52 is decremented. In detail, a high fixed current I 3 is first supplied between the processing electrode 50 and the feeding electrode 5 2. When the amount of electricity determined by multiplying the current value by the processing time has reached a predetermined value (at time t! 〇, The current supplied between the processing electrode 50 and the feeding electrode 52 can be gradually reduced. When the total power has reached a predetermined value (time t 12), that is, when the end time of the processing is reached, the processing processing is ended. By this way of controlling the current, it is also possible to obtain the processing rate as described above and avoid the occurrence of excessive etching. Figure 13 shows an example, which is first supplied between the processing electrode 50 and the feeding electrode 52. Fixed current, and then gradually reduce the current supplied to the processing electrode 50 and the feeding electrode 52, and finally, near the end of the processing, a fixed low voltage is supplied between the processing electrode 50 and the feeding electrode 52 In detail, a high fixed current I 4 is first supplied between the processing electrode 50 and the feeding electrode 52, and when the amount of electricity determined by multiplying the current value by the processing time has reached a predetermined value (at time t 13), you can supply The current between 50 and the feeding electrode 52 is gradually reduced. When the total power reaches a predetermined value (at time 114), a fixed low voltage V 8 is supplied between the processing electrode 50 and the feeding electrode 52; When the total power reaches a predetermined value (at time 115), that is, when the end time of the process is reached, the processing process is ended. This control method helps control the processing rate near the end time of the process.

314269.ptd 第31頁 2uUj〇H7i 五、發明說明(26) • 第1 4圖係顯示一實例,係逐漸地且線性地減少供應於 處理電極5 0及饋電電極5 2之間的電壓或電流。詳言之,針 對電流I而言,電流值係沿著線段I = I ο- a t ( I 〇:初始值, a :比例常數)而遞減。針對電壓V而言,電壓值係沿著線 .段V = V 〇- b t ( V 〇:初始值,b :比例常數)而遞減。當總電量 已達預定值時(在時間116),亦即達到處理的結束時間時, 4便結束該加工處理。此控制方法係可在整個加工處理過程 中遞減處理速率。 第1 5圖係顯示一實例,係沿著任意曲線來連續變化該 #應至處理電極5 0及饋電電極5 2之間的電壓或電流值。詳 言之’針對電流I而言,電流值係沿者任意固定曲線· I二f (t)而改變,針對電壓V而言,電壓值係沿著任意固定 曲線:V = f (t)而改變。當總電量已達預定值時(在時間t n ),亦即達到,處理的結束時間時,便結束該加工處理。 此控制方法係可針對整個加工處理來設定處理速率。 在完成電解加工處理之後,便可中斷電源8 0與處理電 極5 0及饋電電極5 2的連接,並且停止基板固定座4 6及電極 部4 8的轉動。之後,便將基板固定座4 6升起,然後將經處 的基板W傳送至下一個製程。 ^ 此實施例係顯示供應純水(最好係超純水)至電極部48 與基板W之間的空間中。使用在電解之後不含電解質之純 '水或超純水可避免諸如電解質之過多雜質附著且殘留在基 板W之表面上。此外,在電解加工處理期間所分解的銅離 子或類似物質係立即透過離子交換反應而由離子交換器5 6314269.ptd Page 31 2uUj〇H7i V. Description of the invention (26) • Figure 14 shows an example, which gradually and linearly reduces the voltage supplied between the processing electrode 50 and the feed electrode 5 2 or Current. In detail, for the current I, the current value decreases along the line segment I = I ο- a t (I 0: initial value, a: proportionality constant). For the voltage V, the voltage value decreases along the line. The segment V = V 〇- b t (V 〇: initial value, b: proportional constant) and decreases. When the total power has reached a predetermined value (at time 116), that is, when the end time of the process is reached, 4 ends the processing process. This control method can decrease the processing rate during the entire processing process. Figure 15 shows an example, which continuously changes the voltage or current value between the processing electrode 50 and the feeding electrode 52 along an arbitrary curve. In detail, 'for current I, the current value is changed along any fixed curve · I = f (t), and for voltage V, the voltage value is along any fixed curve: V = f (t) change. When the total amount of electricity has reached a predetermined value (at time t n), that is, reached, and the end time of the processing, the processing is ended. This control method can set the processing rate for the entire processing. After the electrolytic processing is completed, the connection of the power source 80 to the processing electrode 50 and the feeding electrode 52 can be interrupted, and the rotation of the substrate holder 46 and the electrode portion 48 can be stopped. After that, the substrate holder 46 is raised, and then the substrate W passing through is transferred to the next process. ^ This embodiment shows that pure water (preferably ultrapure water) is supplied into the space between the electrode portion 48 and the substrate W. The use of pure water or ultrapure water that does not contain an electrolyte after electrolysis can prevent excessive impurities such as electrolyte from adhering and remaining on the surface of the substrate W. In addition, copper ions or the like decomposed during the electrolytic processing are immediately passed through the ion exchange reaction by the ion exchanger 5 6

314269.ptd 第32頁 2uUj〇H7i 五、發明說明(27) 所捕捉。這可以避免解離的銅離子或類似物質在基板W之 其他部位上析出,或者係氧化而變成細微顆粒,而污染基 板W之表面。 超純水係具有高電阻率,因此,電流很難以流經超純 水。藉由縮短電極與工件之間的距離,或者藉由將離子交 換器插置在電極與工件之間,便可以降低電氣阻抗。此 外,當使用與超純水混合在一起之電解溶液時,係可以進 一步降低電氣阻抗以及減少能量的消耗。當電解處理係利 用電解溶液來進行時,該工件會受到處理之部分的範圍係 略寬於該處理電極之面積。在另一方面,在混合使用超純 水及離子交換器的例子中,由於幾乎不會有電流流經該超 純水,因此電氣處理係僅會在該工件其相等於處理電極以 及離子交換器之面積的部位上來進行處理。 亦可以使用藉由添加電解質至純水或超純水所得到之 電解溶液來取代純水或超純水,使用此電解溶液係可進一 步降低電氣阻抗及減少能量消耗。亦可使用中性鹽溶液 (諸如NaCl或Na2SO箨液)或者鹼性溶液(諸如氨水)作為電 解溶液,且這些溶液亦可以依照工件之特性而選擇性地使 用。當使用電解溶液時,最好係在基板W與離子交換器5 6 之間提供略小的間距,以使該基板W與該離子交換器5 6不 會彼此接觸。 此外,亦可以採用一種藉由添加界面活性劑至純水或 超純水所得到之液體以取代該純水或超純水,其中該液體 之導電率係不會超過500// S/cm,且最好係不超過50//314269.ptd Page 32 2uUj〇H7i V. Description of Invention (27) Captured. This can prevent dissociated copper ions or the like from precipitating on other parts of the substrate W, or being oxidized to become fine particles, and contaminating the surface of the substrate W. Ultrapure water has high resistivity, so it is difficult for current to flow through ultrapure water. By reducing the distance between the electrode and the workpiece, or by inserting an ion exchanger between the electrode and the workpiece, the electrical impedance can be reduced. In addition, when using an electrolytic solution mixed with ultrapure water, it can further reduce the electrical impedance and energy consumption. When the electrolytic treatment is performed using an electrolytic solution, the range of the part to be processed of the workpiece is slightly wider than the area of the processing electrode. On the other hand, in the case of mixing ultrapure water with an ion exchanger, since almost no current flows through the ultrapure water, the electrical processing system will only treat the workpiece which is equivalent to the processing electrode and the ion exchanger. Up to the area. It is also possible to use an electrolytic solution obtained by adding an electrolyte to pure water or ultrapure water instead of pure water or ultrapure water. The use of this electrolytic solution can further reduce electrical impedance and energy consumption. Neutral salt solutions (such as NaCl or Na2SO mash) or alkaline solutions (such as ammonia) can also be used as the electrolytic solution, and these solutions can also be selectively used according to the characteristics of the workpiece. When an electrolytic solution is used, it is preferable to provide a slightly smaller distance between the substrate W and the ion exchanger 56, so that the substrate W and the ion exchanger 56 cannot contact each other. In addition, a liquid obtained by adding a surfactant to pure water or ultrapure water can also be used to replace the pure water or ultrapure water, where the conductivity of the liquid will not exceed 500 // S / cm, And preferably not more than 50 //

314269.ptd 第33頁 2uUj〇H7. 五、發明說明(28) s-/cm,且以不超過Ο . 1 // s/cm為最佳(電阻率不小於1 OM · c m)。由於在純水或超純水中存在有界面活性劑,該 液體便可構成一層,該層可用以防止離子在基板W與離子 交換器5 6之間的界面均勻地移動,藉此減少該離子交換之 *濃度(金屬分解),以增進經處理之表面的平整度。該界面 活性劑濃度最好係不超過1 0 0ppm。 依照本發明,處理速率係可以藉由將離子交換器5 6插 置在基板W與處理電極5 0及饋電電極5 2之間而明顯提昇。 關於此點,使用超純水之電化學處理係藉由在超純水中之 #氧離子與待處理材料之間的化學反應來進行。然而,在 超純水中用以作為反應劑之氫氧離子的數量,在正常溫度 及壓力條件下係小到只有10〃莫耳/公升(mol/L),使得因 為不同於清除處理用之反應的其他反應(諸如氧化物薄膜 形成反應)將造成該清除處理的效率降低。因此,便有需 要增加氫氧離子,以有效率地進行清除處理。一種用以增 加氫氧離子之方法係藉由使用觸媒材料來促進超純水之解 離反應,且離子交換器係可以有效地作為觸媒材料。詳言 之,關於水分子解離反應之活化能(a c t i v a t i ο n e n e r g y ) ||由於在離子交換器中之功能基與水分子之間的反應而 藉此可以促進水的解離進而增進該處理速率。 此外,依照本實施例,在電解處理時,離子交換器5 6 '係會與基板W相接觸或靠近。當離子交換器5 6係定位在靠 近基板W之位置時,儘管視該基板W與離子交換器5 6之間的 距離而定,電氣阻抗係會大到某一程度,因此,便需要較314269.ptd Page 33 2uUj〇H7. 5. Description of the invention (28) s- / cm, and the best is not more than 0. 1 // s / cm (resistivity is not less than 1 OM · cm). Due to the presence of a surfactant in pure or ultrapure water, the liquid can constitute a layer that can prevent ions from moving uniformly at the interface between the substrate W and the ion exchanger 56, thereby reducing the ions * Concentrations exchanged (metal decomposition) to improve the flatness of the treated surface. The concentration of the surfactant is preferably not more than 100 ppm. According to the present invention, the processing rate can be significantly increased by inserting the ion exchanger 56 between the substrate W and the processing electrode 50 and the feeding electrode 52. In this regard, the electrochemical treatment using ultrapure water is performed by a chemical reaction between the oxygen ion in the ultrapure water and the material to be treated. However, the number of hydroxide ions used as reactants in ultrapure water is as small as 10 〃mol / L (mol / L) under normal temperature and pressure conditions, which is different from that used for cleaning treatment. Other reactions such as an oxide film formation reaction will cause the efficiency of the removal process to decrease. Therefore, it is necessary to increase the hydroxide ion in order to perform the removal treatment efficiently. One method for increasing hydroxide ions is to promote the dissociation reaction of ultrapure water by using a catalyst material, and the ion exchanger system can be effectively used as a catalyst material. In detail, the activation energy (a c t i v a t i ο n en r g y) of the dissociation reaction of water molecules || is due to the reaction between the functional group in the ion exchanger and the water molecules, thereby promoting the dissociation of water and thereby increasing the treatment rate. In addition, according to this embodiment, the ion exchanger 5 6 ′ is in contact with or near the substrate W during the electrolytic treatment. When the ion exchanger 56 is positioned close to the substrate W, although the electrical impedance is large to a certain degree depending on the distance between the substrate W and the ion exchanger 56, it is necessary to compare

314269.ptd 第34頁 2uUj〇H7i 五、發明說明(29) 大的電壓來提供必要的電流密度。然而,在另一方面,由 於非接觸的關係,其很容易形成純水或超純水沿著基板W 之表面來流動,藉此可將形成在基板表面上之反應產物有 效地清除。在電離子交換器5 6與基板W相接觸的例子中, 電氣阻抗係會變得極小,因此僅需要提供很小的電壓,藉 此便可以減少能量的消耗。 若電壓上升而增加電流密度以增進處理速率時,則當 介於電極與基板(待處理工件)之間的電氣阻抗很大時會發 生放電現象。此放電的發生會造成工件表面的傾斜,因此 便無法形成均勻且平坦之處理過表面。相反地,由於當離 子交換器5 6與基板W相接觸時之電氣阻抗係非常小,因此 可以避免發生放電的情況。 當銅的電解處理係藉由使用具有陽離子交換基之離子 交換器5 6來進行時,在處理完成之後,該離子交換器(陽 離子交換器)5 6之離子交換基係會飽含銅,因而降低下一 次處理時之處理效率。當銅之電解處理係藉由使用具有陰 離子交換基之離子交換器5 6時,會產生氧化銅之細微顆粒 並且附著在離子交換器(陰離子交換器)5 6之表面上,此微 粒係會污染下一個待處理之基板的表面。 為了避免上述的問題,在操作上,相反於加工處理之 電位係由該電源8 0供應至離子交換器5 6,藉此便可經由再 生頭8 8而促進諸如附著在離子交換器5 6的銅之外界物質的 分解。因此,在加工處理期間可進行該離子交換器5 6的再 生操作,經再生之離子交換器5 6係可以由供應至電極部4 8314269.ptd Page 34 2uUj〇H7i V. Description of the invention (29) Large voltage to provide the necessary current density. However, on the other hand, due to the non-contact relationship, it is easy to form pure water or ultrapure water flowing along the surface of the substrate W, thereby effectively removing the reaction products formed on the substrate surface. In the example where the electric ion exchanger 56 is in contact with the substrate W, the electrical impedance system becomes extremely small, and therefore only a small voltage needs to be provided, thereby reducing energy consumption. If the voltage rises to increase the current density to increase the processing rate, a discharge occurs when the electrical impedance between the electrode and the substrate (the workpiece to be processed) is large. The occurrence of this discharge will cause the workpiece surface to tilt, so that a uniform and flat treated surface cannot be formed. In contrast, since the electrical impedance when the ion exchanger 56 is in contact with the substrate W is very small, it is possible to avoid the occurrence of a discharge. When the electrolytic treatment of copper is performed by using an ion exchanger 56 having a cation exchange group, after the treatment is completed, the ion exchange group system of the ion exchanger (cation exchanger) 56 will be saturated with copper, thereby reducing Processing efficiency at the next processing. When the electrolytic treatment of copper is by using an ion exchanger 56 having an anion exchange group, fine particles of copper oxide are generated and adhere to the surface of the ion exchanger (anion exchanger) 56, and the particles are contaminated. The surface of the next substrate to be processed. In order to avoid the above-mentioned problems, in operation, the potential which is opposite to the processing is supplied from the power source 80 to the ion exchanger 56, whereby the regeneration of the ion exchanger 56 by the regeneration head 88 can be promoted. Decomposition of copper outer material. Therefore, the regeneration operation of the ion exchanger 56 can be performed during processing, and the regenerated ion exchanger 56 can be supplied to the electrode section 4 8

314269.ptd 第35頁 2^〇jG1171 五、發明說明(30) 丨之上表面的純水或超純水所清洗。 ’第1 6及第1 7圖係顯示依照本發 一 工裝置36b。在此電解加工裝置心b中,例之電解加 心00與基板固定座46之轉動中心电士邻48之轉動中 鮮|琶極部4 8係以轉動中心〇為中心而* #又距綠d,·且該 I 46則係以轉動中心〇為中心=轉動,而該基板固定座 饋電電極52係經由集電if 78fft ^ 。此外,處理電極50及 此_奋# #丨千& Γ 連接至電源8〇。再者,依照 於基板固定座46之直和,、使;e i:有-直徑,胃直徑係大 魯心而鐘私日4 i 4工使付s龟極部4 8以轉動中心0為 時, 座4 6 乂轉動中心〇為中心而轉動 整個=二亟邛4 8如覆1由基板固定座4 6所固持之基板¥的 係葬^ ’、、、毛解加工裝置3 6 b,基板…之表面的電解加工處理 以基板固定座46來轉動基板w且同樣藉由致動該中 時、、,、7 〇來軺動弘極部4 8而進行,且在加工處理進行的同 電九將純水或超純水供應至電極部48的表面,並且在處理 槌^及饋電電極52之間施加固定的電壓。 堝矣、甩極4 4 8或基板固定座4 6亦可以進行執道運動,諸如 ,動或往復運動,以取代旋轉運動。 力0之=1 8及第1 9圖係顯示依照本發明又另一實施例之電解 \我衣置3 6 d。在此電解加工裝置3 6 d中,在先前實施例中 戶斤^板固定座4 6與電極部48之間的位置關係係倒置的,且 得你1之基板W的正面係朝向(所謂”正面朝上”方式),使 曼解加工處理係針對基板W之上表面來進行。因此,該314269.ptd Page 35 2 ^ 〇jG1171 V. Description of the invention (30) Cleaned by pure water or ultrapure water on the upper surface. Figures 16 and 17 show a construction device 36b according to the present invention. In this electrolytic processing device core b, for example, the rotation of the electrolytic core 00 and the rotation center of the substrate holder 46, and the rotation of the electric power 48. The pole section 48 is centered on the rotation center 0 and * # is from the green d, and the I 46 is centered around the rotation center 0 = rotation, and the substrate fixed base feeding electrode 52 is passed through the current collector if 78fft ^. In addition, the processing electrode 50 and this _ ## 丨 千 & Γ are connected to the power source 80. In addition, according to the direct sum of the substrate fixing seat 46, ei: there is-diameter, the diameter of the stomach is a big heart, and the private day 4 i 4 work to make the turtle pole part 4 8 with the rotation center 0 The seat 4 6 乂 rotates the center 〇 as the center and rotates the whole = two urgently 邛 4 8 such as covering the substrate held by the substrate fixing seat 4 6 ¥ ^ ^ ,, hair removal processing device 3 6 b, substrate The electrolytic processing of the surface is performed by rotating the substrate w with the substrate fixing base 46 and also by actuating the Hongji portion 48 by actuating the intermediate time, ,, and 70, and the same process as the processing is performed Nine is supplied with pure water or ultrapure water to the surface of the electrode portion 48, and a fixed voltage is applied between the processing hammer ^ and the feed electrode 52. Instead of rotary motion, the pot 矣, the pole 4 4 8 or the substrate fixing base 4 6 can also perform holding motions, such as, moving or reciprocating motion. Force 0 = 18 and Figure 19 show the electrolysis according to yet another embodiment of the present invention. In this electrolytic processing device 3 6 d, in the previous embodiment, the positional relationship between the household plate fixing base 46 and the electrode portion 48 is inverted, and the front side of the substrate W of you 1 is oriented (the so-called " "Face up" method), so that the manganese processing is performed on the upper surface of the substrate W. Therefore, the

3]々的 Ptd 第36頁 丄1? 2υϋ〇〇 五、發明說明 一 " —-一〜 基板固定座46係設置在電極部48的正 :::固持之基板_正面係朝向上, 致土板固定 镰 另一方面,電極部48具有覆莫設fΜ马干人t動。在 離子交換器56的處理電極饋電2板固定座46上方之 固持在樞轉臂44之自由端,且其正】:52,^電極部48係 動中空馬達70而以其中心轴為;^心來^月下,並且藉由致 j之電線係通過形成在樞轉軸“;;::由電源 伸及集電m 78,並且進-步地通過中空馬達7〇之;:分且 而到達處理電極50及饋電電極52,以在其間施加電^^部分 純水或超純水係由純水供應管n綹由形成在電極部U 之中央部位之穿孔48a而供應至基板^ ^表面)。 用以再生該安裝在電極部48上之濉彳乂換扣56的再生 部92係設置在基板固定座46的旁邊,誃秀生部92係包括充 填有例如稀釋的酸性溶液之再生=9 4 0 ^操作上,電極 部48係藉由樞轉臂44而移動至仅:^身生貯槽94足上方的 位置然後再降下,使得至少該電極^ 4S的離子交換器56係 可以沉浸在該再生貯槽94之酸性二=中。之後,相反於處 理用之電位係提供至電極板7 6,亦$ ,#由將處硬電極5 0 連接至電源8 0的陽極,而將饋命二即6 2連接至電源8 〇的陰 極,以藉此促使附著在離子』外界物質(諸如 銅)的分解,進而再生該離子交換°°哭5 6,而再生的離子交 換态5 6便可藉由例如超純水來力。、多典。一 此外,依照此實施例,電槌部真徑係設計成遠大3] Ptd of 第 Page 36 丄 1? 2υϋ〇〇 五 、 Explanation 1 " --- ~~ The substrate fixing base 46 is provided on the positive part of the electrode part 48 ::: holding substrate_front side facing up, so that Soil plate fixing sickle On the other hand, the electrode portion 48 has a cover plate fM gangan to move. The ion-exchanger 56 is fixed on the free end of the pivot arm 44 above the plate-feeding holder 46 of the processing electrode 46, and its positive]: 52, ^ the electrode portion 48 is a hollow motor 70 and its central axis is used as; ^ 心 来 ^ At the end of the month, and the wire to j is formed on the pivot axis ";;: extends from the power source to the current collector m 78, and passes through the hollow motor 7〇 step by step; Reach the processing electrode 50 and the feeding electrode 52 to apply electricity therebetween. Part of the pure water or ultrapure water is supplied to the substrate by the perforated 48a formed in the central portion of the electrode portion U through a pure water supply tube n. Surface). The regeneration section 92 for regenerating the cymbal switch 56 mounted on the electrode section 48 is provided beside the substrate holder 46, and the cymbal section 92 includes regeneration filled with, for example, a diluted acid solution = 9 4 0 ^ In operation, the electrode portion 48 is moved to only the position above the foot of the biological storage tank 94 by pivoting the arm 44 and then lowered, so that at least the ion exchanger 56 of the electrode 4S can be immersed in The acidity of the regeneration tank 94 is medium. After that, the potential opposite to the treatment is supplied to the electrode. 7 6 ,, $ , # By connecting the hard electrode 50 to the anode of the power source 80, and connecting the second electrode, that is, 62 to the cathode of the power source 80, to thereby promote the attachment of ions to external substances (such as Copper), thereby regenerating the ion-exchange °°° 56, and the regenerated ion-exchange state 56 can be powered by, for example, ultrapure water. More than one. In addition, according to this embodiment, the electric hammer part True diameter is designed to be big

2u0jG117i 五、發明說明(32) 於由該基板固定座4 6所固定之基板W的直徑者,藉由降下 電極部4 8而導電,以使得離子交換器5 6接觸或靠近由該基 板固定座4 6所固定之基板W,接著轉動基板固定座4 6以及 電極部4 8,且在此同時,樞轉該樞轉臂4 4以沿著基板W之 β上表面來移動該電極部4 8,並且供應純水或超純水至基板 的上表面,然後在該處理電極5 0及饋電電極5 2之間施加預 1定的電壓,便可以在基板W之表面上來進行電解加工處 理。 第2 0及第2 1圖係顯示依照本發明又另一實施例之電解 #工裝置3 6 e。此電解加工裝置3 6 e係採用具有直徑遠小於 藉由基板固定座4 6所固定之基板W的直徑的電極部4 8,使 得基板W之表面並未完全由電極部4 8所覆蓋。在此實施例 中,該離子交換器5 6係一種三層式結構(層疊體),該離子 交換器5 6係由一對強酸性陽離子交換纖維5 6 a、5 6 b以及插 置在纖維5 6 a、5 6 b之間的強酸性陽離子薄膜5 6 c所構成。 該離子交換器(層疊體)5 6具有良好的透水性及高硬度,此 外,相對於基板W之外露表面(下表面)係具有良好的表面 光滑度,該離子交換器5 6之其他結構則係與第1 8及第1 9圖 i示之結構相同。離子交換器5 6之結構係可設計成使得該 _ Θ子交換薄膜係用以作為外露表面,而該離子交換纖維之 層疊體則係設置在外露之離子交換薄膜的上方。 r 藉由使離子交換器5 6成為包含離子交換材料之層疊 層。(諸如不織布、織布及滲透性薄膜)之多層結構,其亦 可以增加整體的離子交換容積,藉此,便可以在例如銅的2u0jG117i V. Description of the invention (32) For the diameter of the substrate W fixed by the substrate holder 4 6, the electrode portion 48 is lowered to conduct electricity so that the ion exchanger 56 contacts or approaches the substrate holder. 4 6 the fixed substrate W, then rotate the substrate fixing seat 46 and the electrode portion 48, and at the same time, pivot the pivot arm 4 4 to move the electrode portion 4 8 along the β upper surface of the substrate W And, by supplying pure water or ultrapure water to the upper surface of the substrate, and then applying a predetermined voltage between the processing electrode 50 and the feeding electrode 52, an electrolytic processing process can be performed on the surface of the substrate W. Figures 20 and 21 show an electrolytic device 3 6e according to yet another embodiment of the present invention. This electrolytic processing apparatus 3 6 e uses an electrode portion 48 having a diameter much smaller than the diameter of the substrate W fixed by the substrate holder 46, so that the surface of the substrate W is not completely covered by the electrode portion 48. In this embodiment, the ion exchanger 56 is a three-layer structure (laminated body). The ion exchanger 56 is composed of a pair of strongly acidic cation exchange fibers 5 6 a and 5 6 b, and is inserted in the fiber. It is composed of 5 6 a and 5 6 b, which is a strongly acidic cationic film. The ion exchanger (layered body) 5 6 has good water permeability and high hardness, and has an excellent surface smoothness with respect to the exposed surface (lower surface) of the substrate W. The other structures of the ion exchanger 5 6 are: The structure is the same as that shown in Figs. The structure of the ion exchanger 56 can be designed such that the _Θ sub-exchange film is used as an exposed surface, and the laminate of the ion-exchange fibers is disposed above the exposed ion-exchange film. r By making the ion exchanger 56 a laminated layer containing an ion exchange material. (Such as non-woven fabrics, woven fabrics, and permeable membranes), which can also increase the overall ion exchange volume, thereby,

314269.ptd 第38頁 2uUj〇H7i 五、發明說明(33) 清除(研磨)處理過程中避免氧化物的形成,進而抑制氧化 物對於處理速率產生不當的影響。關於此點,當離子交換 器5 6之總離子交換容積係小於在清除處理期間之離子交換 器中所承受之銅離子的容積時,在離子交換器之表面上或 内部中便會不當地產生氧化物,其中該氧化物對於處理速 率會產生不利的影響。因此,氧化物的形成係由離子交換 器之離子交換容積所控制,而超過該容積之銅離子便會變 成氧化物。因此,藉由使用由離子交換材料之層疊層所組 成且已增強離子交換容積之多層離子交換器來作為離子交 換器5 6,便可以有效地抑制氧化物的形成。 依照上述之實施例,便可以對例如導電性材料來進行 均勻的加工處理,而不會在處理速率上有急遽的變化,即 使當用以形成互連線之絕緣材料外露在加工處理表面時亦 ΦΚ 〇 第2 2圖係依照本發明又另一實施例之電解加工裝置的 縱向截面正視圖。此電解加工裝置係包括基板固定座1 3 0 以及一電極頭1 3 8,該基板固定座1 3 0係用以吸住及固定住 基板W,且使該基板W的正面朝上(所謂的π面部朝上π方 式),該電極頭1 3 8則具有由絕緣材料所製成之碟狀電極部 1 3 6。在電極部1 3 6中係埋設有扇形狀的處理電極1 3 2及饋 電電極1 3 4,其中該處理電極1 3 2及饋電電極1 3 4係交錯配 置,並且使其表面(下表面)外露出來。由層疊層(層疊體) 所構成之離子交換器1 4 0係安裝在電極部1 3 6的下表面,以 覆蓋住處理電極1 3 2及饋電電極1 3 4的表面。314269.ptd Page 38 2uUj〇H7i V. Description of the invention (33) Avoid the formation of oxides during the removal (grinding) process, and then suppress the oxidants from improperly affecting the treatment rate. In this regard, when the total ion exchange volume of the ion exchanger 56 is smaller than the volume of copper ions received in the ion exchanger during the removal process, it may be inappropriately generated on the surface or inside the ion exchanger. Oxides, where the oxides have an adverse effect on the processing rate. Therefore, the formation of oxides is controlled by the ion exchange volume of the ion exchanger, and copper ions exceeding this volume will become oxides. Therefore, by using a multilayer ion exchanger composed of a laminated layer of ion exchange materials and having an enhanced ion exchange volume as the ion exchanger 56, the formation of oxides can be effectively suppressed. According to the above-mentioned embodiments, uniform processing can be performed on, for example, conductive materials without a drastic change in processing rate, even when the insulating material used to form interconnects is exposed on the processed surface. FIG. 22 is a longitudinal sectional front view of an electrolytic processing apparatus according to yet another embodiment of the present invention. The electrolytic processing device includes a substrate fixing base 130 and an electrode head 138. The substrate fixing base 130 is used to hold and hold the substrate W with the front side of the substrate W facing upward (so-called π face up π method), the electrode tip 1 3 8 has a dish-like electrode portion 1 3 6 made of an insulating material. A fan-shaped processing electrode 1 3 2 and a feeding electrode 1 3 4 are embedded in the electrode portion 1 3 6. The processing electrode 1 3 2 and the feeding electrode 1 3 4 are arranged in a staggered manner, and the surface (lower Surface). The ion exchanger 140 composed of a laminated layer (laminated body) is mounted on the lower surface of the electrode portion 136 to cover the surfaces of the processing electrode 1 3 2 and the power feeding electrode 1 3 4.

314269.pid 第39頁 2υϋ〇〇314269.pid Page 39 2υϋ〇〇

五、發明說明(34) •基板固定座130係直接連 Η2之馬達轴桿i 44的上緣俨,、作曰為昂—驅動部之馬達 固持之基板W與處理電極i 3 2 、使知由基板固定座1 3 0所 可以藉由致動馬達(第一驅曰’二:進行相對運動,並且 板固定座130固持住的情況下 =^得基板W在由該基 動。 f 乂與5亥基板固定座一起轉 电極頭1 3 8係向下連接至樞 轉臂146係可以水平地樞轉。樞;| 14 f由端,該可樞 空樞轉軸桿1 52之上緣端,該中二 9基部係連接至中 累桿150而垂直移動,而該軸桿152係可經由滚 所致動而垂直運動。馬達15:=;丄5_係由馬達m 使得該由基板固定座! 3〇所固持 ^弟一驅動部,以 間可以進行相對運動,該馬達處理電極132之 邊,並且可以與枢轉臂146一起首^在樞轉臂152的旁 銜接於枢轉臂i 46與馬達(第-置私動。同步皮帶1 56係 一體樞轉。 、、、達(弟一驅動部)1 5 4而 電極頭138係直接連接至中空馬達 1^0係用以作為第三驅動部, 从中工馬達 I其拓W溆考饰千4 乂使该由基板固定座1 3 0所固 教基板I'、處理€極i 32之間可以藉由致動該中 1 6 0 (第二驅動部)的轉動來形成相對運動。 … 在此一實施例中,離子交換器140係由-種:層式,士 構(層疊體)所構成,該離子交換器14〇係由^ ^ 離子交制162a、162b以及插置在陽離子交換層(纖維^V. Description of the invention (34) • The base plate fixing base 130 is directly connected to the upper edge of the motor shaft i 44 of the base 2 and is called Ang—the base plate W and the processing electrode i 3 2 held by the motor of the drive unit. The substrate fixing seat 130 can be actuated by a motor (the first drive is called “two: the relative movement is performed, and the plate fixing seat 130 is held in place, so that the substrate W is moved by the base. F 乂 和The 5H board fixing base together with the electrode head 1 3 8 series is connected to the pivot arm 146 series can be horizontally pivoted. Pivot; | 14 f by end, the pivotable hollow pivot shaft 1 52 upper edge end The base of the middle two 9 is connected to the middle tired rod 150 to move vertically, and the shaft 152 can be moved vertically by actuation of the roller. Motor 15: =; 丄 5_ is fixed by the base plate by the motor m Seat! 30. A driving part held by the younger brother can perform relative movement therebetween. The motor processes the side of the electrode 132 and can be connected to the pivoting arm 152 next to the pivoting arm 152 together with the pivoting arm 146. 46 and the motor (the first-private movement. Timing belt 1 56 is pivoted as a whole. 、,, 达 (Brother No. 1 driving section) 1 5 4 and electrode head 1 The 38 series is directly connected to the hollow motor 1 ^ 0 to serve as the third drive unit. From the GM motor I and its extension W 溆 test decoration 4 4 乂 make the substrate I 'fixed by the substrate holder 1 30, processing € A relative motion can be formed between the poles i 32 by actuating the rotation of the 160 (second driving part).… In this embodiment, the ion exchanger 140 is composed of: a layer type, a structure (Laminated body), the ion exchanger 1440 is composed of ^ ^ ion exchange 162a, 162b, and is inserted in the cation exchange layer (fiber ^

第40頁 2u(jj〇i|7i 五、發明說明(35) 1 6 2 a、1 6 2 b之間的強酸性陽離子交換層(薄膜)1 6 2 c所構 成。該離子交換器(層疊體)1 4 0係具有良好的透水性及高 硬度,此外,相對於基板W之外露表面(下表面)係具有良 好的表面光滑度。 離子交換器1 4 0之每一層疊層1 6 2 a、1 6 2 b及1 6 2 c最好 係具有強酸性陽離子交換基(硫酸基);然而,亦可以採用 具有弱酸性陽離子交換基(羧酸基)之離子交換器,具有強 鹼性陰離子交換基(四基銨基)之離子交換器,或者係具有 弱鹼性陰離子交換基(三基或更低的氨基基)之離子交換 器。 藉由使用由具有陰離子交換基或陽離子交換基而可使 水穿透之不織布來作為離子交換器1 4 0之層疊層1 6 2 a、 16 2b及16 2c,在液體中之離子與離子交換器之離子交換基 之間便可以很容易來產生離子交換反應。 離子交換器1 4 0最好係具有”透水性及吸水性’'。此 外,至少在相對於工件之材料部分最好係具有高硬度及良 好的表面光滑度。舉例來說,一種市面上可購得之發泡級 聚胺基曱酸酯’’1(: 1 0 0 0 ”(由1?〇(161公司所製造),通常係用 以作為C Μ P之襯墊,其質地堅硬且具有極佳的耐磨性。藉 由提供複數個穿孔,此產品便可用以作為離子交換器1 4 0 之材料。亦可以在樹脂板中提供開孔,以藉此形成可透水 的板體來使用在離子交換器1 4 0中。當然,該樹脂最好係 具有”吸水特性’’。 純水喷嘴1 7 0係設置在基板固定座1 3 0的上方,其中該Page 40 2u (jj〇i | 7i V. Description of the invention (35) Strong acidic cation exchange layer (film) 1 6 2 c between 1 6 2 a and 16 2 b. The ion exchanger (layered The 1 4 0 series has good water permeability and high hardness, and has a good surface smoothness with respect to the exposed surface (lower surface) of the substrate W. Each laminated layer of the ion exchanger 1 4 0 1 6 2 a, 1 6 2 b and 1 6 2 c are preferably those having a strong acidic cation exchange group (sulfate group); however, ion exchangers having a weakly acidic cation exchange group (carboxylic acid group) can also be used, which have strong alkalinity Anion exchangers with anion-exchange groups (tetraylammonium groups), or ion exchangers with weakly basic anion-exchange groups (tri- or lower amino groups). By using anion-exchange groups or cation-exchange groups The non-woven fabric that can penetrate water is used as the laminated layers of the ion exchanger 1 40, 16 2a, 16 2b, and 16 2c. It is easy to come between the ions in the liquid and the ion exchange groups of the ion exchanger. An ion exchange reaction occurs. The ion exchanger 1 4 0 is best Has "water permeability and water absorption". In addition, at least the part of the material relative to the workpiece is preferably high hardness and good surface smoothness. For example, a commercially available foam-grade polyamine The gallate `` 1 (: 1 0 0 0 '' (manufactured by 161 (made by 161)) is usually used as a gasket for CMP. Its texture is hard and has excellent abrasion resistance. By By providing a plurality of perforations, this product can be used as the material of the ion exchanger 1 40. It is also possible to provide openings in the resin plate to form a water-permeable plate for use in the ion exchanger 1 40 . Of course, the resin is best to have "water absorption characteristics". Pure water nozzle 170 is arranged above the substrate fixing seat 130, where the

314269.ptd 第41頁 2uQj〇U7i 五、發明說明(36) 純水噴嘴1 7 0係用以作為純水供應部,以將液體(諸如純水 或超純水)供應至該由基板固定座1 3 0所固持之基板W與定 位在下方之電極頭1 3 8之間。藉此,純水或超純水便可供 應至離子交換器1 4 0。 該電解加工裝置係具有數值控制器1 7 2,以執行驅動 部的數值控制,亦即執行馬達(第一驅動部)1 4 2、馬達(第 二驅動部)1 5 4以及馬達(第三驅動部)1 6 0之數值控制,俾 使得彼此面對之由該基板固定座1 3 0所固持之基板W與處理 電極1 3 2可以進行相對運動。因此,馬達(驅動部)1 4 2、 _ 4及1 6 0便可作為可數值控制之伺服馬達,且該等馬達之 轉動角度及轉動速度便可以藉由該數值控制器1 7 2所輸出 的信號來進行數值控制。依照此實施例,用於垂直運動之 馬達1 4 8亦可以是伺服馬達,並且可以由數值控制器1 7 2所 輸出之信號來加以數值化控制。 電解加工裝置亦具有電量監視器1 7 4,該電量監視器 1 7 4係連接至由電源1 6 8延伸而出之電線,以監視及測量在 加工處理進行期間所使用的電量。依照此實施例,該電量 監視器1 7 4係包含電量積算器(庫侖計),係藉由將電源1 6 8 戶&供應之電流值乘以加工處理時間而測量出電量,並且累 力P該電量,以決定出所使用的總電量以及處理時間,由電 量監視器1 7 4所輸出之信號係輸入至該數值控制器1 7 2中。 依照此實施例,在預定時間内進行電解加工處理的期 間,該數值控制器1 7 2係數值化控制:由基板固定座1 3 0所 固持之基板W經由馬達(第一驅動部)1 42所轉動之旋轉速314269.ptd Page 41 2uQj〇U7i V. Description of the invention (36) Pure water nozzle 1 70 is used as the pure water supply unit to supply liquid (such as pure water or ultrapure water) to the substrate holder The substrate W held by 130 and the electrode head 138 positioned below are held. Thereby, pure water or ultrapure water can be supplied to the ion exchanger 140. The electrolytic processing device has a numerical controller 1 72 to perform numerical control of the driving section, that is, a motor (first driving section) 1 4 2, a motor (second driving section) 1 5 4 and a motor (third The numerical control of the driving part 16 is performed such that the substrate W held by the substrate fixing seat 130 and the processing electrode 1 32 facing each other can perform relative movement. Therefore, the motor (drive part) 1 4 2, _ 4 and 16 0 can be used as numerically controllable servo motors, and the rotation angle and speed of these motors can be output by the numerical controller 1 7 2 Signal for numerical control. According to this embodiment, the motor 1 4 8 for vertical movement may also be a servo motor, and may be numerically controlled by a signal output from the numerical controller 17 2. The electrolytic processing device also has a power monitor 1 74, which is connected to a power line extending from a power source 168 to monitor and measure the power used during the processing process. According to this embodiment, the power monitor 174 includes a power totalizer (coulomb counter). The power monitor measures the power by multiplying the current value supplied by the power source 168 households & processing time, and is tired. P This power is used to determine the total power used and the processing time. The signal output by the power monitor 174 is input to the numerical controller 172. According to this embodiment, during the electrolytic processing process within a predetermined time, the numerical controller 17 2 performs coefficient value control: the substrate W held by the substrate holder 1 30 is passed through the motor (first driving section) 1 42 Rotation speed

314269.ptd 第42頁 2uUj〇H7i 五、發明說明(37) 度;藉由馬達(第二驅動部)1 5 4而由樞轉臂1 4 6之樞轉所造 成之電極頭1 3 8的水平移動速度;藉由馬達(第三驅動 部)1 6 0所造成之電極頭1 3 8的旋轉速度;以及在基板W與電 極頭1 3 8之間的相對運動速度。此外,在電解加工處理 中,電能係供應於處理電極1 3 2及饋電電極1 3 4之間,同時 控制電流及電壓值之至少其中一者。 現將參考第2 3及第2 4圖來說明數值控制之實例。首 先,如第2 3圖所示,先測量工件在加工處理之前的形狀。 詳言之,在X-Y-Z座標系統中(其中該Z軸係垂直於作為基 準面的X-Y平面),測量出預加工處理形狀之各個不同座標 點,所測量之預加工處理形狀數據係輸入至數值控制器 1 7 2中。再者,對預加工處理形狀之座標點(X、y、z !)而 言,欲得到之加工處理後形狀的對應座標點(X、y、z 2)亦 以欲得到形狀數據之型式而輸入至數值控制器1 7 2中。此 外,單元處理形狀數據(例如憑藉電壓之處理速率),亦即 處理速率與供應至處理電極1 3 2及饋電電極1 3 4之間之電壓 之間的關係以及處理電極1 3 2與基板W之間之相對速度的數 據,係事先或在任意時間輸入至數值控制器1 7 2中。 當電解加工處理在控制處理電極1 3 2與基板W之間之相 對運動速度的情況下進行一段經控制之固定加工處理時間 時,加工處理量係視處理速率而定,且因而亦與施加至處 理電極1 3 2及饋電電極1 3 4之間的電壓(或電流)有關。因 此,在固定之處理時間的情況下,亦即,在基板W與處理 電極1 3 2位在面對面之位置且發生電解加工處理現象的期314269.ptd Page 42 2uUj〇H7i V. Description of the invention (37) degrees; the electrode head 1 3 8 caused by the pivot of the pivot arm 1 4 6 by the motor (second driving part) 1 5 4 Speed of horizontal movement; speed of rotation of the electrode tip 138 caused by the motor (third driving part) 160; and speed of relative movement between the substrate W and the electrode tip 138. In addition, in the electrolytic processing, electric energy is supplied between the processing electrode 1 2 and the feeding electrode 1 3 4 and at least one of the current and voltage values is controlled at the same time. Examples of numerical control will now be described with reference to FIGS. 23 and 24. First, as shown in Figure 23, first measure the shape of the workpiece before processing. In detail, in the XYZ coordinate system (where the Z axis is perpendicular to the XY plane as the reference plane), various coordinate points of the pre-processed shape are measured, and the measured pre-processed shape data is input to the numerical control器 1 7 2 中. In addition, for the coordinate points (X, y, z!) Of the pre-processed shape, the corresponding coordinate points (X, y, z 2) of the desired processed shape are also determined by the type of shape data to be obtained. Enter the numerical controller 1 7 2. In addition, the unit processes the shape data (such as the processing rate by voltage), that is, the relationship between the processing rate and the voltage supplied to the processing electrode 1 3 2 and the feeding electrode 1 3 4 and the processing electrode 1 3 2 and the substrate The relative speed data between W is input to the numerical controller 172 in advance or at any time. When the electrolytic processing is performed with a controlled fixed processing time while controlling the relative motion speed between the processing electrode 1 3 2 and the substrate W, the processing processing amount depends on the processing rate, and is therefore also related to the The voltage (or current) between the processing electrode 1 3 2 and the feeding electrode 1 3 4 is related. Therefore, in the case of a fixed processing time, that is, a period in which the substrate W and the processing electrode 132 are in a face-to-face position and the electrolytic processing phenomenon occurs

314269.ptd 第43頁 2uUj〇H7i 五、發明說明(38) 間-(駐留時間),只有針對施加於處理電極1 3 2及饋電電極 1 3 4之間的電壓(或電流值)的數值控制,才能以具有高精 確、度之型式來產生所要得到之經處理過的工件形狀。 因此,依照此實施例,便可根據輸入至數值控制器 ,1 7 2中之數據,而針對每一座標點來決定出在z方向上之加 工處理量Z至Z 2,根據加工處理量Z至Z 2,便可針對每一座 >票點來決定欲施加於處理電極1 3 2及饋電電極1 3 4之間的電 壓(或電流值),且該信號係輸入至電源1 6 8中,以便數值 化控制該由電源1 6 8施加至處理電極1 3 2及饋電電極1 3 4之 電壓(或電流值)。 接下來將說明由此電解加工裝置所進行的電解加工處 理。 首先,基板W(例如在第1B圖中所示之基板W)在其表面 上係具有用以作為導體薄膜之銅薄膜6 (待處理部分),該 基板W係由基板固定座1 3 0所吸住且固定,且該電極頭1 3 8 係藉由樞轉臂1 4 6而移動至位在由基板固定座1 3 0所固持之 基板W之正上方的加工處理位置。接著,該電極頭1 3 8便藉 由用於垂直運動之馬達1 4 8的致動而降下,使得安裝在電 極頭1 3 8之電極部1 3 6之下表面上的離子交換器1 4 0可以與 由基板固定座1 3 0所固持之基板W的上表面相接觸或接 近。 ' 接著,將電能自電源1 6 8施加至處理電極1 3 2及饋電電 極1 3 4之間,同時控制電壓及電流之至少其中一者,並且 轉動基板固定座1 3 0及電極頭1 3 8。此外,樞轉該槐轉臂314269.ptd Page 43 2uUj〇H7i V. Description of the invention (38) Time-(Residence time), only for the voltage (or current) value applied between the processing electrode 1 3 2 and the feeding electrode 1 3 4 Control can produce the processed workpiece shape with high precision and degree. Therefore, according to this embodiment, the processing amount Z to Z 2 in the z direction can be determined for each coordinate point according to the data input to the numerical controller 1 72, and according to the processing amount Z to Z 2, the voltage (or current value) to be applied between the processing electrode 1 3 2 and the feeding electrode 1 3 4 can be determined for each seat > vote, and the signal is input to the power supply 1 6 8 In order to numerically control the voltage (or current value) applied by the power source 168 to the processing electrode 1 3 2 and the feeding electrode 1 3 4. Next, an electrolytic processing process performed by this electrolytic processing apparatus will be described. First, a substrate W (for example, the substrate W shown in FIG. 1B) has a copper film 6 (a portion to be processed) as a conductor film on the surface, and the substrate W is held by a substrate fixing seat 130 It is sucked and fixed, and the electrode head 1 3 8 is moved to a processing position directly above the substrate W held by the substrate fixing seat 130 by a pivot arm 1 4 6. Then, the electrode head 1 3 8 is lowered by the actuation of the motor 1 4 8 for vertical movement, so that the ion exchanger 1 4 installed on the lower surface of the electrode part 1 3 6 of the electrode head 1 3 8 0 may contact or approach the upper surface of the substrate W held by the substrate fixing seat 130. '' Next, apply electrical energy from the power source 168 to the processing electrode 1 3 2 and the feeding electrode 1 3 4 while controlling at least one of the voltage and the current, and rotate the substrate holder 1 3 0 and the electrode head 1 3 8. In addition, pivot the locust boom

314269.ptd 第44頁 五 一、發明說明(39) ^----— 定 間 1 中 之 1 4 6以水平地移動該電極頭1 3 8。在此同時, 定座1 30上方來供應純水或超純水至基板恤,可由基板固 ,藉此將纯水或超純水充滿於處理電極極頭138之 34與基板W之間的空間中。因此,藉由在 2及^饋電電極 所產生的氫離子或氫氧離子,便可針對^子交換器1 40 導體薄膜(銅薄膜6 )來進行電解加工處理乂成在基板W上 更詳細地說’純水或超純水係經由在離 & 中之催化反應的幫助而解離成氫氧離子及言+父換裔1 4 0 子(OH-)係會將銅薄膜6附近的電荷加以轉=離^。氫氧離 基,該氫氧基係與在基板w之銅薄膜6上而變成氫氧 行薄膜之清除(研磨)處理。為了阻絕在饋泰^,以藉此進 生的氫氣,可以採用氣體無法穿透之離子=^極1 3 4所產 性陽離子交換薄膜1 6 2 c,藉此便可以阻絕來作為強酸 藉由電極部1 36的轉動所產生的純 心氧氣’並且可以 氫氣清除至外界。 / "、水的流動來將 在加工處理之前或在加工處理, =或在加工處理期間的加工處理中的形=處理形狀 =處理形狀數據、以及處理電極盥工件,數據、單元加 本輸入至數值控制 7 相對運動的數 其藉由馬達(第-驅動部”:2所上3。所固 成之== 广…)154而由樞轉臂心 包a碩1 38的水平移動速度; 輅所造 σ 1 60所造成之電極頭丄38 丄、、·、 -其區動 ~迷度’以及在基板W與電314269.ptd Page 44 51. Description of the invention (39) ^ ----— 1 of 4 in the interval 1 to move the electrode head 1 3 8 horizontally. At the same time, pure water or ultrapure water is supplied to the substrate shirt from above the seat 1 30, which can be fixed by the substrate, thereby filling pure water or ultrapure water into the space between the processing electrode tips 138 and 34 and the substrate W in. Therefore, by using the hydrogen ions or hydroxide ions generated at the 2 and ^ feed electrodes, electrolytic processing can be performed on the ^ sub-converter 1 40 conductor film (copper film 6), and the substrate W can be more detailed. Say 'pure water or ultrapure water is dissociated into hydroxide ions with the help of a catalytic reaction in ionization & the parent + ancestor 1 4 0 The son (OH-) system will charge in the vicinity of the copper film 6 To turn = Li ^. Hydrogen ionization is performed on the copper thin film 6 on the substrate w, and the film is removed (polished). In order to prevent the feeding of hydrogen, in order to use it to generate hydrogen, ions that cannot be penetrated by gas = ^ pole 1 3 4 produced cation exchange membrane 1 6 2 c, which can be blocked as a strong acid by The pure oxygen generated by the rotation of the electrode portion 1 36 can be removed to the outside by hydrogen. / ", the flow of water to be processed before or during processing, = or during processing during processing = processing shape = processing shape data, and processing electrode parts, data, units plus this input The number of relative movements to the numerical control 7 is the horizontal movement speed of the pivoting arm pericardium a master 1 38 by the motor (the first driving section ": 2 to 3. 3. The fixed == wide ...) 154; 辂The electrode heads 丄 38 丄, ,,,-caused by the σ 1 60 produced, and the area of the electrode ~

2uUj〇H7i 五、發明說明(40) 極頭1 3 8之間的相對運動速度。在電解加工處理中,電能 係在控制電流及電壓之至少其中一者的情況下來供應至處 理電極1 3 2及饋電電極1 3 4之間’該電解加工處理可以產生 具有高精確形狀之經處理工件的所要形狀。 在電解加工處理期間,由電源1 6 8供應至處理電極1 3 2 及饋電電極1 3 4之間的電量係由電量監視器1 7 4所監視。因 此,該電量便可以藉由將電源1 6 8所供應之電流值與加工 處理時間相乘來獲得,將該電量係累加以決定出所使用之 總電量。在進行一段固定之加工處理時間的電解加工處理 參,加工處理量係與供應於處理電極1 3 2及饋電電極1 3 4之 間的電流(或電壓)有關。因此’加工處理置可以措由監視 及測量電量而決定,當總電量已達預定值時,亦即達到處 理的結束時間時,便結束該加工處理。藉由如此決定處理 的結束時間,利用處理量與電量之間的關聯性,且藉由監 視及測量在加工處理期間所供應的電量,便可生產出具有 南精確度形狀之經處理工件的所要形狀。 在完成電解加工處理之後,便可中斷電源168,並且 停止基板固定座1 3 0與電極頭1 3 8的轉動,以及停止枢轉臂 1 4 6的樞轉。之後,便可將電極頭1 3 8升起,且將由基板固 #座1 3 0所固持之經處理過的工件傳送至下一個加工處理 流程。 依照此實施例,亦可選擇性地實施相對步進操作。因 此,用以轉動該固持基板W (工件)之基板固定座1 3 0的馬達 14 2係安裝在X-Y平台(第四驅動部)1 78之上表面,其中該2uUj〇H7i V. Description of the invention (40) The relative speed of movement between the poles 1 38. In the electrolytic processing, the electric energy is supplied between the processing electrode 1 2 and the feeding electrode 1 3 4 under the control of at least one of the current and the voltage. The electrolytic processing can generate a warp having a highly accurate shape. Process the desired shape of the workpiece. During the electrolytic processing process, the amount of power supplied between the processing electrode 1 3 2 and the feed electrode 1 3 4 by the power source 16 8 is monitored by the power monitor 1 7 4. Therefore, the amount of electricity can be obtained by multiplying the current value supplied by the power supply 168 and the processing time, and the amount of electricity can be accumulated to determine the total amount of electricity used. During a certain period of electrolytic processing, the amount of processing is related to the current (or voltage) supplied between the processing electrode 1 2 and the feed electrode 1 3 4. Therefore, the processing process can be determined by monitoring and measuring the power amount. When the total power amount reaches a predetermined value, that is, when the processing end time is reached, the processing process is ended. By determining the end time of the process in this way, by utilizing the correlation between the amount of processing and the amount of electricity, and by monitoring and measuring the amount of power supplied during the processing, it is possible to produce the desired shape of the processed workpiece with a South precision shape shape. After the electrolytic processing is completed, the power supply 168 can be interrupted, and the rotation of the substrate holder 130 and the electrode head 138 can be stopped, and the pivoting of the pivot arm 146 can be stopped. After that, the electrode tip 138 can be raised, and the processed workpiece held by the substrate holder # 130 can be transferred to the next processing process. According to this embodiment, a relative step operation can also be selectively implemented. Therefore, the motor 14 2 for rotating the substrate holder 130 for holding the substrate W (workpiece) is mounted on the upper surface of the X-Y platform (fourth driving section) 1 78, where the

314269.ptd 第46頁 2uUj〇H7i 五、發明說明(41) X - Y平台(第四驅動部)1 7 8係具有可藉由馬達1 7 5 a之致動而 沿X方向移動之X平台1 7 6 a以及可藉由馬達1 7 5 b之致動而沿 y方向移動之Y平台1 76b。馬達1 75a、1 75b係可數值化控制 之伺服馬達,且其轉動角度及轉動速度係可以藉由數值控 制器1 7 2所輸出之信號來加以數值化控制。 以下將參考第2 5圖來說明用以實現步進操作之數值化 控制的一個實例。首先,如第23圖所示,先在X-Y-Z座標 系統中(其中該Z轴係垂直於作為基準面的X-Y平面)測量出 預加工處理形狀之各個不同座標點以測量出工件在加工處 理之前的形狀,所測量之預加工處理形狀數據係輸入至數 值控制器1 7 2中。再者,針對預加工處理形狀之座標點 (X、y、z !),欲得到之加工處理後形狀的對應座標點(X、 y、z 2)亦輸入至數值控制器1 7 2中。此外,單元處理形狀數 據(例如視電壓而定之處理速率)以及工件面對處理電極期 間所經歷的時間數據,係事先或在任意時間輸入至數值控 制器172中。 依照此實施例,便可根據輸入至數值控制器1 7 2中之 數據,而針對每一座標點來決定出在z方向上之加工處理 量Z至Z 2,根據加工處理量z真Z 2,便可針對每一座標點來 決定出欲施加於處理電極1 3 2及饋電電極1 3 4之間的電壓 (或電流值),且該信號係輸入至電源1 6 8中,以便在供應 電能於處理電極1 3 2及饋電電極1 3 4之間時,數值化控制該 由電源1 6 8施加至處理電極1 3 2及饋電電極1 3 4之間的電壓 (或電流值)。314269.ptd Page 46 2uUj〇H7i V. Description of the invention (41) X-Y platform (fourth drive unit) 1 7 8 is an X platform that can be moved in the X direction by actuation of a motor 17 5 a 1 7 6 a and a Y platform 1 76 b that can be moved in the y direction by actuation of a motor 1 7 5 b. The motors 1 75a and 1 75b are numerically controllable servo motors, and their rotation angles and speeds can be numerically controlled by signals output by the numerical controller 172. An example of numerical control for realizing step operation will be described below with reference to Figs. First, as shown in FIG. 23, firstly, in the XYZ coordinate system (where the Z axis is perpendicular to the XY plane as a reference plane), different coordinate points of the pre-processed shape are measured to measure the workpiece before processing. The shape and the measured pre-processed shape data are input to the numerical controller 172. Furthermore, for the coordinate points (X, y, z!) Of the pre-processed shape, the corresponding coordinate points (X, y, z 2) of the desired processed shape are also input into the numerical controller 172. In addition, the unit processes the shape data (such as the processing rate depending on the voltage) and the time data during which the workpiece faces the processing electrode are input to the value controller 172 in advance or at any time. According to this embodiment, the processing amount Z to Z 2 in the z direction can be determined for each coordinate point according to the data input to the numerical controller 172, and according to the processing amount z true Z 2, The voltage (or current value) to be applied between the processing electrode 1 3 2 and the feeding electrode 1 3 4 can be determined for each coordinate point, and the signal is input to the power supply 1 6 8 so as to supply power When the processing electrode 1 3 2 and the feeding electrode 1 3 4 are numerically controlled, the voltage (or current value) applied between the processing electrode 1 3 2 and the feeding electrode 1 3 4 by the power source 16 8 is numerically controlled.

314269.ptd 第47頁 2uUj〇H7i 五、發明說明(42) - 依照此一實施例,例如在第1 B圖中所示之基板W,在 該-基板W表面上係具有用以作為導體薄膜之銅薄膜6 (待處 珲部分),且該基板W係由基板固定座1 3 0所吸住且固定。 安裝在處理電極1 3 2上之離子交換器1 4 0係會靠近或接觸該 基板W之表面。接著,藉由將電能供應於處理電極1 3 2及饋 電電極1 3 4之間,便可以進行電解加工處理,且在此同 時,藉由數值控制器1 7 2以及轉動該電極頭1 3 8來控制電壓 (或電流)。 在電解加工處理期間,步進操作係使基板W在X或Y方 上重複進行移動及停止的操作。針對此操作,如前所 述,預加工處理形狀數據、所要形狀數據、單元處理數據 以及工件-電極面對面時間數據,係事先輸入至數值控制 器1 7 2中,藉此數值化控制:電極頭1 3 8藉由馬達1 6 0之轉 動;Χ-Υ平台(第四驅動部)178藉由馬達175a、17 5b之運 動;以及藉由電源1 6 8而施加至處理電極1 3 2及饋電電極 1 3 4之間的電壓(或電流)。因此,加工處理時間(亦即電極 頭1 3 8面向該基板其欲進行電解加工處理之部位期間所經 過的時間)可藉由分別控制馬達1 6 0及X - Y平台1 7 8之馬達 17 5a、1 7 5 b來加以控制,藉此便可使電解加工處理進行一 員定的時間。在電解加工處理期間,供應於處理電極 1 3 2及饋電電極1 3 4之間的電壓(或電流)係加以數值化控 淛,此電解加工處理係可生產出具有高精確度形狀之經處 理過基板的所要形狀。 該π相對步進操作”在此係一種可使X-Y平台及處理電314269.ptd Page 47 2uUj〇H7i V. Description of the Invention (42)-According to this embodiment, for example, the substrate W shown in FIG. 1B is provided with a conductor film on the surface of the-substrate W The copper thin film 6 (part to be left), and the substrate W is sucked and fixed by the substrate fixing seat 130. The ion exchanger 1 40 mounted on the processing electrode 1 2 3 will approach or contact the surface of the substrate W. Then, by supplying electric energy between the processing electrode 1 2 and the feeding electrode 1 3 4, the electrolytic processing can be performed, and at the same time, the numerical controller 1 7 2 and the electrode head 1 3 are rotated. 8 to control voltage (or current). During the electrolytic processing process, the step operation is an operation in which the substrate W is repeatedly moved and stopped in the X or Y direction. For this operation, as mentioned earlier, the pre-processing shape data, desired shape data, unit processing data, and workpiece-electrode face-to-face time data are input into the numerical controller 1 72 in advance, thereby numerically controlling: the electrode tip 1 3 8 is rotated by the motor 160; the X-Υ platform (fourth drive part) 178 is moved by the motors 175a, 17 5b; and is applied to the processing electrode 1 3 2 and fed by the power source 1 6 8 The voltage (or current) between the electrical electrodes 1 3 4. Therefore, the processing time (that is, the time elapsed when the electrode tip 1 3 8 faces the portion of the substrate on which the electrolytic processing is to be performed) can be controlled by the motor 17 of the motor 16 and the X-Y stage 1 7 8 respectively. 5a, 1 7 5 b to control, so that the electrolytic processing can be performed for a set time. During the electrolytic processing process, the voltage (or current) supplied between the processing electrode 1 2 2 and the feed electrode 1 3 4 is numerically controlled. This electrolytic processing process can produce a warp with a highly accurate shape. The desired shape of the substrate is processed. The "π relative stepping operation" here is a method that enables the X-Y platform and

314269.ptd 第48頁 ^ U ϋ j G ” 7 s314269.ptd Page 48 ^ U ϋ j G ”7 s

五、發明說明(43) 極1 3 2其中一者或兩者同時移動或進行相對運動之操作, 使得處理電極1 3 2可以在基板W上重複進行一定距離的移動 以及停止。V. Description of the Invention (43) One or both of the electrodes 1 2 are moved or moved at the same time, so that the processing electrode 1 2 can be repeatedly moved and stopped on the substrate W at a certain distance.

第2 6圖係顯示依照本發明又另一實施例之電解加工裝 ^ °該電解加工裝置在基板固定座1 3 〇之上表面周緣具有 3衣狀接點固持板1 8 〇。複數個作為饋電電極之向内突伸的 接點1 8 2,係以一定的間距安裝於接點固持板i 8 〇上。此 =,電極頭138係具有處理電極184,以取代在第22圖之實 轭例中所使用的電極部丨3 6,該處理電極i 8 4係經由集電環 186而連接至電源168的陽極,且接點(饋電電極)182係連 接至電源168的陰極,其他的結構則與第22圖所示之裝置Fig. 26 shows an electrolytic processing device according to yet another embodiment of the present invention. The electrolytic processing device has three clothes-like contact holding plates 1 800 on the upper surface periphery of the substrate fixing seat 130. A plurality of inwardly protruding contacts 1 8 2 serving as feeding electrodes are mounted on the contact holding plate i 8 0 at a certain distance. This =, the electrode tip 138 has a processing electrode 184 to replace the electrode portion used in the real yoke example in FIG. 22, the processing electrode i 8 4 is connected to the power source 168 via a slip ring 186 The anode, and the contact (feeding electrode) 182 is connected to the cathode of the power source 168. The other structure is the same as the device shown in FIG. 22

Eh ^^、、+此貝%例,當基板W由基板固定座1 3 0所固持時, Λ電極?I82便會與作為待處理材料之銅㈣ ί銅溥膜6係沉積在基板¥之表面上,如第1 Β圖所 ^ ^ =工處理係以相同於前述實施例之方式來進 至處理電極184與接點(饋電命下^、、^由电源I68施加電月匕Eh ^^, + + In this example, when the substrate W is held by the substrate holder 130, the Λ electrode? I82 will be deposited on the surface of the substrate with copper ㈣ copper 溥 film 6 as the material to be processed, as shown in Figure 1 B ^ ^ = The processing is carried out to the processing electrode in the same way as in the previous embodiment. 184 and contacts (at the time of feeding ^ ,, ^ The electric moon is applied by the power source I68

制至少一電壓*電、、:信:)士 2之㈤,同B寺數值化控 極頭1 38#雜制 *值,在此同呀,基板固定座1 30及電 極頭1 38 :二參J且該樞轉臂1 4 6係樞轉以水平地移動該電 i 3〇所me 1其f電極頭138係轉動的,且由基板固定座 止操作,亦即進行γ'\178而重複進行移動及停 由純水喷嘴m而///=2 ^同日寺,純水或超純水係 至基板w與處理電極】8 4之間。如Make at least one voltage * electricity,: letter :) Shi 2 the same as the numerical control pole 1 38 # miscellaneous system * value of B temple, the same here, the substrate holder 1 30 and the electrode head 1 38: two Refer to J and the pivot arm 146 is pivoted to horizontally move the electric i 3 〇 me 1 and its f electrode head 138 is rotated, and is operated by the substrate holder, that is, γ '\ 178 and Repeat the movement and stop by the pure water nozzle m while // == 2 ^ Sameday Temple, pure water or ultrapure water is between the substrate w and the processing electrode] 8 4. Such as

第49頁 2uUj〇H7i 五、發明說明(44) 此,便可以進行基板W之導電薄膜(銅薄膜6 )的電解加工處 理。 _ 在進行電解加工處理之前,與先前之實施例一樣,預 加工處理形狀數據、所要形狀數據、單元處理數據等係先 _輸入至數值控制器1 7 2中,以便控制加工處理時間,亦即 控制基板W與處理電極1 8 4位在彼此面對位置期間所經過的 、寺間,使得在預定時間(駐留時間)内發生電解加工處理現 象,且同時數值化控制施加於處理電極1 8 4及接點(饋電電 極)1 8 2之間的電壓(或電流)。在此控制下所進行之電解加 41處理,係可以生產出具有高精確度形狀之經處理過基板 W的所要形狀。 施加於處理電極1 8 4及接點(饋電電極)1 8 2之間的電壓 控制係可利用以下的原理,亦即,當電壓增加時,流經處 理電極及饋電電極之間的電流便會變大,且處理速率亦會 等比例地變快,且反之亦然。 工件之形狀測量,不僅可以在加工處理之前來進行, 且亦可以在加工處理期間的任何時間内進行任意次數的測 量,因為這樣的關係,將會造成實際加工處理時間與預定 加工處理時間不相符,而時間差會導致所形成之經處理工 _ 之形狀的形狀精確度下降。藉由儘可能進行多次工件之 加工處理中的測量操作,便可以消除或降低此精確度的降 •低。因此,增加加工處理中之測量次數係可以加強加工處 理的精確度。 依照上述的實施例,依照預定之加工處理時間以及對Page 49 2uUjOH7i V. Description of the Invention (44) In this way, the electrolytic processing of the conductive film (copper film 6) of the substrate W can be performed. _ Before the electrolytic processing is performed, as in the previous embodiment, the pre-processing shape data, desired shape data, unit processing data, etc. are first input to the numerical controller 1 7 2 in order to control the processing time, that is, The control substrate W and the processing electrode 1 8 4 pass between the temples during the position facing each other, so that the electrolytic processing phenomenon occurs within a predetermined time (residence time), and at the same time numerical control is applied to the processing electrode 1 8 4 And the contact (feeding electrode) between 1 8 2 voltage (or current). The electrolytic plus 41 treatment performed under this control can produce a desired shape of the processed substrate W having a highly accurate shape. The voltage control system applied between the processing electrode 1 8 4 and the contact (feeding electrode) 1 8 2 can use the following principle, that is, when the voltage increases, the current flowing between the processing electrode and the feeding electrode It will become larger, and the processing rate will be proportionally faster, and vice versa. The shape measurement of the workpiece can be performed not only before the processing, but also any number of times at any time during the processing. Because of this relationship, the actual processing time will not match the scheduled processing time. , And the time difference will cause the shape accuracy of the processed shape to be reduced. This reduction in accuracy can be eliminated or reduced by performing measurement operations as many times as possible during the processing of the workpiece. Therefore, increasing the number of measurements during processing can enhance the accuracy of processing. According to the above-mentioned embodiment, according to the predetermined processing time and the

314269.ptd 第50頁 2ϋϋj〇i|7| 五、發明說明(45) 應於加工處理前之工件形狀與加工處理後所要形狀之間的 座標差值或者對應於加工處理期間之工件形狀與加工處理 後所要形狀之間的座標差值的加工處理量係決定了電流值 數據或電壓值數據,而該電流數據(電壓值數據)係輸入至 數值控制器中。根據所輸入之數據,數值控制器便可數值 化控制由電源供應於處理電極及饋電電極之間的電流(或 電壓),如此控制之加工處理便可生產出具有高形狀精確 度之加工處理後之工件的所要形狀。 雖然本發明之特定實施例已顯示及詳細說明如上,然 而,應瞭解的是,在不違背後附申請專利範圍之範疇的情 況下,上述實施例仍可具有許多的修飾及變化。 產業可利用性 本申請案係根據2 0 0 2年2月2 1日申請之國際專利申請 PCT/JP02/0154 5號,其全文内容在此援引為參考。 本發明係關於一種電解加工裝置及方法,尤其係關於 一種用以處理存在於基板(尤其係半導體晶圓)表面上之導 電材料,或者係清除附著在基板表面上之雜質的電解加工 裝置及方法。314269.ptd Page 50 2ϋϋj〇i | 7 | V. Description of the invention (45) The coordinate difference between the shape of the workpiece before processing and the desired shape after processing or the shape and processing of the workpiece during processing The processing amount of the coordinate difference between the desired shapes after processing determines the current value data or voltage value data, and the current data (voltage value data) is input into the numerical controller. According to the input data, the numerical controller can numerically control the current (or voltage) supplied by the power source between the processing electrode and the feeding electrode, and the controlled processing can produce a processing with high shape accuracy. The desired shape of the subsequent workpiece. Although the specific embodiments of the present invention have been shown and described in detail above, it should be understood that the above-mentioned embodiments may have many modifications and changes without departing from the scope of the scope of the attached patent. Industrial Applicability This application is based on International Patent Application No. PCT / JP02 / 0154 No. 5 filed on February 21, 2002, the contents of which are incorporated herein by reference. The present invention relates to an electrolytic processing device and method, and more particularly, to an electrolytic processing device and method for processing conductive materials existing on the surface of a substrate (especially a semiconductor wafer), or for removing impurities adhering to the surface of the substrate. .

314269.ptd 第51頁 2uUj〇H7i ffl式簡單說明 [-圖式之簡單說明] . 第1 A至第1 C圖係示意圖,其中依照步驟順序顯示形成 銅互連線的實例; 第2圖係示意圖,其中顯示利用離子交換器來進行電 解加工處理的原理; 第3A至第3D圖係示意圖,其中顯示在經控制之固定電 流的條件下,所進行之電解加工處理中之處理速率變化的 情況; 第4圖係圖表,其中顯示在經控制之固定電流條件下 /φ進行之電解加工處理中所供應的電壓隨時間改變的情 況; 第5 Α至第5 D圖係示意圖,其中顯示在經控制之固定電 壓條件下所進行之電解加工處理中處理速率改變的情況; 第6圖係圖表,其中顯示在經控制之固定電壓條件下 所進行之電解加工處理中的電流隨時間改變的情況; 第7圖係縱向截面正視圖,其中顯示依照本發明之實 施例的電解加工裝置; 第8圖係第7圖之裝置的平面圖; 第9圖係圖表,其中顯示供應至處理電極與饋電電極 的電壓與電流的貫例, 第1 0圖係圖表,其中顯示供應至處理電極與饋電電極 •之間的電壓與電流的另一實例; 第1 1圖係圖表,其中顯示供應至處理電極與饋電電極 之間的電壓與電流之又另一實例;314269.ptd Page 51 2uUj〇H7i ffl simple explanation [-simple description of the diagram]. Figures 1 A to 1 C are schematic diagrams in which the examples of forming copper interconnects are shown in order of steps; Figure 2 is Schematic diagram showing the principle of electrolytic processing using an ion exchanger; Figures 3A to 3D are schematic diagrams showing the change in the processing rate of the electrolytic processing under the condition of a controlled fixed current Figure 4 is a graph showing the change in the voltage supplied in the electrolytic processing under a controlled fixed current condition / φ over time; Figures 5A to 5D are schematic diagrams in which the Changes in the treatment rate during electrolytic processing under controlled fixed voltage conditions; Figure 6 is a graph showing the current over time in the electrolytic processing under controlled fixed voltage conditions; Fig. 7 is a longitudinal sectional front view showing an electrolytic processing apparatus according to an embodiment of the present invention; Fig. 8 is a plan view of the apparatus of Fig. 7; The diagram is a diagram showing an example of the voltage and current supplied to the processing electrode and the feeding electrode. FIG. 10 is a diagram showing another example of the voltage and current supplied to the processing electrode and the feeding electrode. Figure 11 is a chart showing another example of the voltage and current supplied between the processing electrode and the feeding electrode;

314269.ptd 第52頁 2uUj〇H7i 圖式簡單說明 第1 2圖係圖表,其中顯示供應至處理電極與饋電電極 之間的電壓與電流再另一貫例, 第1 3圖係圖表,其中顯示供應至處理電極與饋電電極 之間的電壓與電流又再另一實例; 第1 4圖係圖表,其中顯示供應至處理電極與饋電電極 之間的電壓與電流又另一貫例, 第1 5圖係圖表,其中顯示供應至處理電極與饋電電極 之間的電壓與電流再另一貫例, 第1 6圖係縱向截面正視圖,其中顯示依照本發明之另 一實施例的電解加工裝置; 第1 7圖係第1 6圖之裝置的平面視圖; 第1 8圖係縱向截面正視圖,其中顯示依照本發明之又 另一實施例的電解加工裝置; 第1 9圖係第1 8圖之裝置的平面視圖; 第2 0圖係縱向截面正視圖,其中顯示依照本發明之再 另一實施例的電解加工裝置; 第21圖係第20圖之裝置的平面視圖; 第2 2圖係縱向截面正視圖,其中顯示依照本發明又另 一實施例的電解加工裝置; 第2 3圖係示意圖,其中顯示工件之預加工處理形狀與 加工處理後所要形狀之間的關係; 第2 4圖係方塊圖,其中顯示藉由第2 2圖之電解加工裝 置所進行之數值控制的實例; 第2 5圖係方塊圖,其中顯示藉由第2 2圖之電解加工裝314269.ptd Page 52 2uUj〇H7i The diagram is briefly explained. The picture 12 is a diagram showing another example of the voltage and current supplied between the processing electrode and the feed electrode. The picture 13 is a diagram showing The voltage and current supplied between the processing electrode and the feeding electrode are another example; FIG. 14 is a chart showing another example of the voltage and current supplied between the processing electrode and the feeding electrode. Fig. 5 is a diagram showing another example of the voltage and current supplied between the processing electrode and the feeding electrode. Fig. 16 is a longitudinal sectional front view showing an electrolytic processing device according to another embodiment of the present invention. Figure 17 is a plan view of the device of Figure 16; Figure 18 is a longitudinal sectional front view showing an electrolytic processing device according to yet another embodiment of the present invention; Figure 19 is Figure 18 Figure 20 is a plan view of the device; Figure 20 is a longitudinal sectional front view showing an electrolytic processing device according to still another embodiment of the present invention; Figure 21 is a plan view of the device of Figure 20; Figure 2 2 Vertical section A front view showing an electrolytic processing device according to yet another embodiment of the present invention; FIG. 23 is a schematic diagram showing a relationship between a pre-processed shape of a workpiece and a desired shape after processing; FIG. 24 is a block FIG. 2 shows an example of numerical control performed by the electrolytic processing device of FIG. 22; FIG. 25 is a block diagram showing the electrolytic processing device by FIG. 22

314269.ptd 第53頁 2uUj〇117i i式簡單說明 置所進行之數值控制的另一個實例;以及 • 第2 6圖係縱向截面正視圖,其中顯示依照本發明又另 一實施例的電解加工裝置。 1 半導體基部 1 a 導電層 2 絕緣薄膜 3 接觸孔洞 4 溝渠 5 阻障層 6 銅薄膜 7 種子層 10 工件 10a 原子 • a 、12b、 56、 140、 148 離子交換器 14、 50、 132、 184 處理電極 1 6 ^ 52、 134 饋電電極 17〜 80、 168 電源 18 液體 19 液體供應部 20 水分子 22 氫氧離子 24 氫離子 26 反應產物 36 > 36b、 36d、 36e 電解加工裝置 4[ 46、 86、 146 1 3 0基板固定座 樞轉臂 身、 1 3 6電極部 48a 穿孔 5 6a 56c 、56b 陽離子交換薄膜 陽離子交換纖維 60 ^ 64、 68、 142、 148〜 馬達 154、 160、 175a、 175b314269.ptd Page 53 2uUj〇117i Another simple example of numerical control performed by the device; and Figure 26 is a longitudinal sectional front view showing an electrolytic processing device according to yet another embodiment of the present invention . 1 semiconductor base 1 a conductive layer 2 insulating film 3 contact hole 4 trench 5 barrier layer 6 copper film 7 seed layer 10 workpiece 10a atom • a, 12b, 56, 140, 148 ion exchanger 14, 50, 132, 184 processing Electrode 1 6 ^ 52, 134 Feeder electrode 17 ~ 80, 168 Power supply 18 Liquid 19 Liquid supply part 20 Water molecule 22 Hydroxide ion 24 Hydrogen ion 26 Reaction product 36 > 36b, 36d, 36e Electrolytic processing device 4 [46, 86, 146 1 3 0 substrate holder pivot arm, 1 3 6 electrode part 48a perforation 5 6a 56c, 56b cation exchange membrane cation exchange fiber 60 ^ 64, 68, 142, 148 ~ motor 154, 160, 175a, 175b

314269.ptd 第54頁 2uUj〇H7i314269.ptd Page 54 2uUj〇H7i

圖式簡單說明 62〜 150 滾珠螺桿 66 樞轉軸桿 70 > 160 中空馬達 72 純水供應管 7[ 170 純水喷嘴 76 電極板 78 集電環 84、 92 再生部 88 再生頭 94 再生貯槽 100 控制器 102 電流量積 算器 138 電極頭 144 馬達軸桿 152 中空轉動軸桿 156 同步皮帶 162a 、162b、 162c 陽離子交換層 (層 疊層 ) 172 數值控制 器 174 電量監視器 178 X-Y平台 178a X平台 178b Y平台 180 接點固持板 182 接點(饋 電電 極) d 距離 Il-I 4 固定電流 (Η、 02轉動中心 tl-tl7 時間 VI V8 固定電壓 W 基板 ZI > Z 2加工處理量 314269.ptd 第55頁Brief description of the drawing 62 ~ 150 Ball screw 66 Pivot shaft 70 > 160 Hollow motor 72 Pure water supply pipe 7 [170 Pure water nozzle 76 Electrode plate 78 Collector ring 84, 92 Regeneration section 88 Regeneration head 94 Regeneration tank 100 Control Device 102 Current Integrator 138 Electrode head 144 Motor shaft 152 Hollow rotating shaft 156 Timing belt 162a, 162b, 162c Cation exchange layer (layered layer) 172 Numerical controller 174 Electricity monitor 178 XY platform 178a X platform 178b Y platform 180 contact holding plate 182 contact (feeding electrode) d distance Il-I 4 fixed current (Η, 02 rotation center tl-tl7 time VI V8 fixed voltage W substrate ZI > Z 2 processing throughput 314269.ptd 55th page

Claims (1)

2uUj〇H7i 六、申請專利範圍 1·. 一種電解加工裝置,包括: • 處理電極,可以靠近或與工件相接觸; 、 饋電電極,係用以將電力饋給至該工件; 離子交換器,係設置在該工件與該處理電極之間 的空間以及該工件與該饋電電極之間之空間的至少其 中一個空間中; 流體供應部,係用以將流體供應至該工件與該處 理電極及該饋電電極之至少其中一個之間的空間中, 其中該空間中係存在有該離子交換器;以及 • 電源,係在任意控制電壓或電流之至少其中一者 以供應電能至該處理電極與該饋電電極之間。 2. 如申請專利範圍第1項所述之電解加工裝置,其中,該 電源係供應固定電壓於該處理電極與該饋電電極之 間。 3. 如申請專利範圍第1項所述之電解加工裝置,其中,該 •電源係在電壓及電流之至少其中一者隨時間而改變的 情況下,供應電能至該處理電極與該饋電電極之間。 4. 如申請專利範圍第1項所述之電解加工裝置,其中,該 電源係供應固定電壓或具有連續變化值之固定電流至 ®該處理電極與該饋電電極之間。 5. 如申請專利範圍第1項所述之電解加工裝置,其中,該 電源係依序供應固定電流及固定電壓至該處理電極與 該饋電電極之間。 6. 如申請專利範圍第1項所述之電解加工裝置,其中,該2uUj〇H7i 6. Patent application scope 1. An electrolytic processing device includes: • a processing electrode, which can be close to or in contact with a workpiece; a feeding electrode, which is used to feed power to the workpiece; an ion exchanger, Is provided in at least one of a space between the workpiece and the processing electrode and a space between the workpiece and the feeding electrode; a fluid supply unit for supplying fluid to the workpiece and the processing electrode and A space between at least one of the feed electrodes, wherein the ion exchanger is present in the space; and a power source, which supplies electric energy to the processing electrode and at least one of any control voltage or current, and Between the feeding electrodes. 2. The electrolytic processing device according to item 1 of the scope of the patent application, wherein the power source supplies a fixed voltage between the processing electrode and the feeding electrode. 3. The electrolytic processing device according to item 1 of the scope of patent application, wherein the power source supplies electric energy to the processing electrode and the feeding electrode in a case where at least one of voltage and current changes with time. between. 4. The electrolytic processing device according to item 1 of the scope of patent application, wherein the power supply is a fixed voltage or a fixed current having a continuously changing value between the processing electrode and the feeding electrode. 5. The electrolytic processing device according to item 1 of the scope of patent application, wherein the power supply sequentially supplies a fixed current and a fixed voltage between the processing electrode and the feeding electrode. 6. The electrolytic processing device described in item 1 of the scope of patent application, wherein the 314269.pul 第56頁 2uUj〇H7i 六、申請專利範圍 電源係先供應具有連續變化值之固定電流,然後再供 應具有連續變化值之固定電壓至該處理電極與該饋電 電極之間。 7. —種電解加工方法,包括: 提供處理電極、饋電電極以及離子交換器,其中 該離子交換器係設置在工件與該處理電極之間之空間 與該工件與該饋電電極之間之空間的至少其中一個空 間中; 使該處理電極靠近或接觸該工件,同時由該饋電 電極饋給電力至該工件; 供應流體至該工件與該處理電極與該饋電電極之 至少其中一個之間的空間中,其中有該空間中係存在 有該離子交換器;以及 在任意控制電壓或電流之至少其中一者的情況下 ’供應電能至該處理電極與該饋電電極之間。 8. 如申請專利範圍第7項所述之電解加工方法,其中,固 定電壓係供應於該處理電極與該饋電電極之間。 9. 如申請專利範圍第7項所述之電解加工方法,其中,該 電源係在電壓及電流之至少其中一者隨時間變化的情 況下,施加電能至該處理電極與該饋電電極之間。 1 0 .如申請專利範圍第7項所述之電解加工方法,其中,該 電源係施加固定電壓或具有連續變化值之電流至該處 理電極與該饋電電極之間。 1 1 .如申請專利範圍第7項所述之電解加工方法,其中,該314269.pul Page 56 2uUj〇H7i VI. Scope of patent application The power supply first supplies a fixed current with a continuously changing value, and then supplies a fixed voltage with a continuously changing value between the processing electrode and the feeding electrode. 7. An electrolytic processing method, comprising: providing a processing electrode, a feeding electrode, and an ion exchanger, wherein the ion exchanger is disposed between a space between the workpiece and the processing electrode and between the workpiece and the feeding electrode In at least one of the spaces; bringing the processing electrode close to or contacting the workpiece, and simultaneously feeding power to the workpiece by the feeding electrode; supplying fluid to at least one of the workpiece and the processing electrode and the feeding electrode In the space between them, the ion exchanger is present in the space; and 'supply electric energy between the processing electrode and the feed electrode under the condition of at least one of any control voltage or current. 8. The electrolytic processing method according to item 7 of the scope of patent application, wherein a fixed voltage is supplied between the processing electrode and the feeding electrode. 9. The electrolytic processing method as described in item 7 of the scope of patent application, wherein the power source applies electric energy between the processing electrode and the feeding electrode under the condition that at least one of the voltage and the current changes with time. . 10. The electrolytic processing method according to item 7 of the scope of patent application, wherein the power source applies a fixed voltage or a current having a continuously changing value between the processing electrode and the feeding electrode. 1 1. The electrolytic processing method as described in item 7 of the scope of patent application, wherein the 314269.ptd 第57頁 2uUj〇H7i 六、申請專利範圍 -電源係依序施加固定電流及固定電壓於該處理電極與 -該饋電電極之間。 1 2 . —種電解加工裝置,包括: 處理電極,可以靠近或與工件相接觸; 饋電電極,係用以將電力饋給至該工件; 離子交換器,係設置在該工件與該處理電極之間 的空間以.及該工件與該饋電電極之間之空間的至少其 中一個空間中; 流體供應部,係用以將流體供應至該工件與該處 鲁理電極及該饋電電極之至少其中一個之間的空間中, 其中該空間中係存在有該離子交換器;以及 電量積算器,係用以測量供應於該處理電極與該 饋電電極之間的總電量。 1 3 . —種電解加工方法,包括: 提供處理電極、饋電電極以及離子交換器,其中 該離子交換器係設置在工件與該處理電極之間之空間 與該工件與該饋電電極之間之空間的至少其中一個空 間中; 使該處理電極靠近或接觸該工件,同時由該饋電 •電極饋給電力至該工件; 供應流體至該工件與該處理電極及該饋電電極之 至少其中一個之間的空間中,其中該空間中係存在有 該離子交換器;以及 測量供應於該處理電極與該饋電電極之間的總電314269.ptd Page 57 2uUj〇H7i 6. Scope of patent application-The power supply sequentially applies a fixed current and a fixed voltage between the processing electrode and-the feeding electrode. 1 2. An electrolytic processing device including: a processing electrode that can be brought close to or in contact with a workpiece; a feeding electrode for feeding power to the workpiece; an ion exchanger provided between the workpiece and the processing electrode Between at least one of the space between the workpiece and the feeding electrode; and a fluid supply unit for supplying fluid to the workpiece and the routing electrode and the feeding electrode In a space between at least one of them, the ion exchanger is present in the space; and a power totalizer is used to measure the total power supplied between the processing electrode and the feeding electrode. 1 3. An electrolytic processing method including: providing a processing electrode, a feeding electrode, and an ion exchanger, wherein the ion exchanger is disposed between a space between the workpiece and the processing electrode and between the workpiece and the feeding electrode In at least one of the spaces; bringing the processing electrode close to or contacting the workpiece, and at the same time, supplying power to the workpiece by the feeding electrode; supplying fluid to at least one of the workpiece and the processing electrode and the feeding electrode In a space between which the ion exchanger is present; and measuring the total power supplied between the processing electrode and the feed electrode 314269.ptd 第58頁 2uUj〇H7i 六、申請專利範圍 量,並且根據所測得之總電量來偵測出該工件之加工 處理進程及/或加工處理的結束時間。 1 4 . 一種電解加工裝置,包括: 固定座,係可抑卸自如地固持工件; 處理電極,係可靠近或接觸該由該固定座所固持 之工件; 饋電電極,係用以饋給電力至該由該固定座所固 持之工件; 離子交換器,係設置在該工件與該處理電極之間 之空間及該工件與該饋電電極之間之空間的至少其中 一個空間中; 流體供應部,係用以將流體供應至該工件與該處 理電極及該饋電電極之至少其中一個之間的空間中, 其中該空間中係存在有該離子交換器; 電源,係在控制電壓及電流之至少其中一者的情 況下,供應電能至該處理電極與該饋電電極之間; 驅動部,係用以使該由該固定座所固持之工件與 該處理電極產生相對運動;以及 數值控制器,係對該驅動部以及該電源進行數值 控制。 1 5 .如申請專利範圍第1 4項所述之電解加工裝置,復包含 電量監視器以監視及測量在加工處理進行期間的電 量。 1 6 .如申請專利範圍第1 4項所述之電解加工裝置,其中,314269.ptd Page 58 2uUj〇H7i 6. The scope of patent application, and the processing of the workpiece and / or the end time of the processing are detected based on the measured total power. 1 4. An electrolytic processing device, comprising: a fixed base for holding a workpiece freely; a processing electrode for approaching or contacting the workpiece held by the fixed base; a feeding electrode for feeding electric power To the workpiece held by the fixing base; an ion exchanger is provided in at least one of a space between the workpiece and the processing electrode and a space between the workpiece and the feeding electrode; a fluid supply unit Is used to supply fluid to the space between the workpiece and at least one of the processing electrode and the feeding electrode, wherein the ion exchanger is present in the space; the power source is in the control voltage and current In the case of at least one of them, supplying electric energy between the processing electrode and the feeding electrode; a driving unit for causing a relative movement between the workpiece held by the fixing base and the processing electrode; and a numerical controller , The numerical control of the driving part and the power supply. 15. The electrolytic processing device described in item 14 of the scope of patent application, further comprising a power monitor to monitor and measure the amount of electricity during the processing process. 16. The electrolytic processing device described in item 14 of the scope of patent application, wherein: 314269.ptd 第59頁 2uUj〇H7| 之之 ,之 得成 中得 測形。其測 所要源,所 前想電置間 之所該裝期 理後制工理 處理控加處 工處來解工 加工值電加 在加差之在 件在標述件 工件座所工 該工的_該 據該間14據 根與之第根 係據據圍係 器 犯器 制標標利制 圍控座座專控 Μ值的的請值 Μ數狀狀申數 申該形形如該 、 . •六· ' '17 形 ,量 之 中電 成 其之 形。,得 要源置測 想電裝所 所該工中 後制加器 理控解視 處來電監。 工值之量間 加差述電時: 件標所該束括 工座項在結包 該的15據的, 與間第根理法 據之圍係處方 數據範器工工 標數利制加加 座標專控定解 的座請值決電 狀的申數來種 形狀如該值一 中處間 之 其該空 持 ,與之 固 器件間 所; 換工之 座件 交之極 定工 子持電 固該 離固電 該至 及所饋 由力 以座該 該電 極定及 觸給 電固件 接饋 電由工 ·,或極 饋在該中近電 、置與間靠電 極設間空極饋 電係空個電該 理器之一理由 處換間中處時 供交之其該同 提子極少使, 離電至 件 該理的 工 之有 時中 極在 同其 電存 ,少 電係 間至 饋中 之之 該間 極流 及空 電電 極該 電及 電中 饋壓 理其 該電 處, 與制 該中 極控 與間 電化 件空 理值 工的 處數 該間 該來 至之·,於器 體個器能制 流一換電控及 應中交應值以 供其子供數; 少離 由者 至該 藉一314269.ptd Page 59 2uUj〇H7 | Among them, the result is medium and the shape is measured. The source of the test, the factory wants to install the equipment after the installation process, the processing, processing, processing and control office to dissolve the processing value, add the difference between the work in progress and the workpiece in the marked part. __The data according to which the 14 data is based on the system, the system, the standard system, the standard system, the system, and the control system. 、 · 六 · '17 shape, electricity in the shape of its shape. It is necessary to set the source to test the equipment in the post. The difference between the value of the work value and the time of the electricity description: If the item standard includes the 15 items that are included in the contract, the data related to the first legal principle is the prescription data model. The coordinates of the coordinated control solution are determined by the singular number of the electrical statement. The shape is as follows: the value is between the empty position and the fixed device; the fixed part of the replacement part holds the power. The solid and the solid electricity should be fed to the electrode by the force of the electrode, and the contactor should be connected to the electric fixture, or the pole feed in the near and near electric, interposed and interposed electrodes to set the space electrode feed system. One of the reasons for emptying the device is to change the room, and it is very rare to use the same. When the device is disconnected from the power supply, the work is sometimes stored in the same device. The pole current and air electric electrode in the feed, the electricity and the electric pressure in the electric feed, the electric place, and the system of the pole control and the electric parts of the air conditioning value, the place should come to, The device body can control the current, change the electric control, and deliver the value for the child to supply the number; 生 產 314269.ptd 第60頁 2uUj〇H7i 六、申請專利範圍 相對運動,同時藉由該數值控制器數值化控制該運 : 處器 控至 : 處器 括 工制 而能 括 工制 包 加控 值電 包 加控 , 在值 差應 ,·,在值 法·,件數 標供 法狀件數 方狀工該 座, 方形工該 工形該至 的下 工之該至 加之及入 間況 加件及入 解件以輸 之情 解工以輸 電工據據 狀的。電該據據 之該數數 形者間之量數數 述量標標 要一之述測標標 所測座座 所中極所間座座 賊先的的 與其電g期的的 1前狀狀 狀少電1行狀狀 第之形形 形至饋第進形形 圍理之之 得之該圍理之之 範處得要 測流與範處得要 利工測想 照電極利工測想 專加所所及依及電專加所所及 請在將後以在壓理請在將後以 。申 之; 電處申 之; 動如 理中 制該如 理中Production 314269.ptd Page 60 2uUj〇H7i VI. Relative motion of patent application range, meanwhile numerically control the operation by the numerical controller: processing device control to: processing device includes work system and can include work package plus control value The electric package is controlled, the value difference should be, in the value method, the number of pieces is standard for the number of pieces, the square shape of the work, the work of the work, the work of the work, the addition of the work, and the addition of the condition, and The case of entering the dismantling and dismissing the work is based on the evidence of the electrician. The number of the number between the number and the number of the data is based on the number of the number. The number of the number is one. The number of the number is one. The shape of the shape is less than one line. The shape of the shape is fed to the shape of the feeding shape. The scope of the profile must be measured and the flow must be measured. Special plus office and the electric special plus room, please after the pressure in the pressure, please after the pressure. Apply for it; apply for it at the office; 控至 而 能 值電 差應 標供 座, 的下 間況 之情 狀的。 形者間 要一之 所中極 314269.ptd 第61頁Controlled to the value of the energy difference should be standard for the seat, the situation. The Shaper Wants One Place 314269.ptd Page 61
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