JP2003225831A - Electrochemical machining device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide high-efficiency and high-planar machining to the surface of a work piece, for instance, when machining a conductive material. <P>SOLUTION: This device has a machining electrode 50 freely coming close to a work piece W, and a power supply electrode 52 supplying power to the work piece W, a laminated body 56 with a laminated structure disposed at least either between the work piece W and the machining electrode 50 or between the work piece W and the power supply electrode 52, fluid supply parts 72 and 48a supplying fluids between at least either the machining electrode 50 or the power supply electrode 52 and the work piece W where the laminated body 56 exists, and a power supply 80 applying a voltage between the machining electrode 50 and the power supply electrode 52. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrolytic processing apparatus, and more particularly to an electrolytic processing used for processing an electrically conductive material on the surface of a substrate such as a semiconductor wafer or removing impurities adhering to the surface of the substrate. Regarding the device.

[0002]

2. Description of the Related Art In recent years, as a wiring material for forming a circuit on a substrate such as a semiconductor wafer, copper (Cu) having a low electric resistivity and a high electromigration resistance has been used in place of aluminum or an aluminum alloy. It has become noticeable. This kind of copper wiring is generally formed by embedding copper inside the fine recesses provided on the surface of the substrate. As a method of forming this copper wiring, CV
There are methods such as D, sputtering and plating,
In any case, a copper film is formed on almost the entire surface of the substrate, and unnecessary mechanical copper is removed by chemical mechanical polishing (CMP).

FIG. 13 shows an example of manufacturing a copper wiring board W of this type in the order of steps. First, as shown in FIG. 13A, a conductive layer on a semiconductor substrate 1 on which a semiconductor element is formed. 1
An insulating film 2 such as an oxide film made of SiO ₂ or a Low-K material film is deposited on a, and a contact hole 3 and a wiring groove 4 are formed in the insulating film 2 by a lithography / etching technique. A barrier film (barrier metal) 5 made of TaN or the like is further formed thereon, and a seed layer 7 is further formed thereon as a power feeding layer for electrolytic plating.

Then, as shown in FIG. 13B, the surface of the substrate W is plated with copper to form the contact holes 3
Further, the trench 4 is filled with copper, and the copper film 6 is deposited on the insulating film 2. Then, the copper film 6 on the insulating film 2 is removed by chemical mechanical polishing (CMP), and the surface of the insulating film 2 and the surface of the copper film 6 filled in the contact hole 3 and the wiring groove 4 are removed. Make them almost the same plane. As a result, FIG.
As shown in (c), the wiring made of the copper film 6 is formed.

Recently, as the miniaturization and precision of all the components of equipment have progressed and the manufacturing of materials in the submicron region has become common, the influence of the processing method itself on the characteristics of the material becomes more and more significant. ing. Under such circumstances, a machining method in which a tool physically destroys a work piece and removes it, as in conventional machining, causes many defects in the work piece due to the machining. , The characteristics of the work piece deteriorate. Therefore, how to perform processing without deteriorating the characteristics of the material becomes a problem.

As a special processing method developed as a means for solving this problem, there are chemical polishing, electrolytic processing, and electrolytic polishing.
These processing methods, in contrast to conventional physical processing,
The removal processing and the like are performed by causing a chemical dissolution reaction. Therefore, defects such as a work-affected layer and dislocations due to plastic deformation do not occur, and the problem that the above-described processing is performed without impairing the characteristics of the material can be achieved.

As electrolytic processing, a method using an ion exchanger has been developed. This is as shown in FIG.
On the surface of the workpiece 10, the ion exchanger 12a attached to the processing electrode 14 and the ion exchanger 12b attached to the power feeding electrode 16 are brought into contact or close to each other, and a power source 17 is provided between the processing electrode 14 and the power feeding electrode 16. A liquid 18 such as ultrapure water is supplied from the liquid supply unit 19 between the machining electrode 14 and the power supply electrode 16 and the workpiece 10 while applying a voltage via the It is designed to be removed. According to this electrolytic processing, the water molecules 20 in the liquid 18 such as ultrapure water are dissociated into hydroxide ions 22 and hydrogen ions 24 by the ion exchangers 12a and 12b, and the generated hydroxide ions 22 are The electric field between the work piece 10 and the working electrode 14 and the flow of the liquid 18 such as ultrapure water supply the surface of the work piece 10 facing the working electrode 14 to the work piece 10 here. The density of the hydroxide ions 22 in the vicinity is increased, and the atoms 10a of the workpiece 10 are reacted with the hydroxide ions 22. The reaction substance 26 generated by the reaction is
The workpiece 10 is dissolved by the liquid 18 such as ultrapure water and flows along the surface of the workpiece 10 by the flow of the liquid 18 such as ultrapure water.
Removed from.

[0008]

As described above, when electrolytic processing is carried out by disposing an ion exchanger on at least one of the machining electrode and the feeding electrode and the workpiece, the physical properties and form of this ion exchanger are obtained. Greatly affects the processing characteristics of the surface of the work piece. For example, there is a problem that copper ions saturated in the ion exchanger after processing affect the processing efficiency. If an ion exchanger with low water permeability is used, it becomes difficult to supply the fluid to the surface of the work piece,
There arises a problem that it becomes difficult to remove the processed product generated on the surface of the workpiece. Furthermore, the hardness and surface smoothness of the ion exchanger have a great influence on the surface of the workpiece.

Further, in this type of electrolytic processing (electrochemical processing), the processing proceeds due to the electrochemical interaction between reactive species ions and the workpiece, and the processing speed at each point on the surface of the workpiece is Except for the physical properties of the workpiece, it basically depends on the current density and the frequency of existence of the machining electrode. However, in actual processing, the processing speed at each point on the surface of the workpiece becomes uneven due to the nonuniformity of the electrolytic reaction on the surface of the workpiece. As a method for overcoming this nonuniformity of the processing speed, there are considered a method for making the electrolytic reaction uniform and a method for making the plurality of electrodes pass through each point on the surface of the work piece to average them. .

However, in the method (1), it is necessary not only to remove the processed products and bubbles generated at the same time but also to suppress the electric field concentration at the electrode end. In the method (1), the machining speed is averaged by providing a large number of electrodes, but the electrodes are subdivided, leading to a plurality of electrodes.

The present invention has been made in view of the above circumstances, and, for example, when processing a conductive material, an electrolysis that enables highly efficient and highly flat processing on the surface of a workpiece. An object is to provide a processing device.

[0012]

According to a first aspect of the present invention, there is provided a machining electrode which can be brought close to a workpiece, a power feeding electrode for feeding power to the workpiece, a workpiece and the machining electrode, or Supplying a fluid between a laminate having a laminated structure disposed on at least one of a workpiece and the power feeding electrode, and a workpiece on which the laminate is present and at least one of the machining electrode or the power feeding electrode. And an electric power source that applies a voltage between the machining electrode and the power supply electrode.

As described above, at least one of a laminate having a laminated structure having an increased storage capacity (ion exchange capacity in an ion exchanger) is provided between the workpiece and the processing electrode or between the workpiece and the power feeding electrode. By arranging in, the processed products (oxides and ions) generated by the electrolytic reaction are prevented from accumulating in the stack in excess of this storage capacity, and the form of the processed products accumulated in the stack changes, It can be prevented from affecting the processing speed and its distribution.

[0014] Here, a reproducing section for performing a reproducing process of the laminated body may be further provided. As a result, the laminated product is regenerated during the machining or during the machining interval, and the processed product accumulated in the laminated body is removed from the outside of the laminated body, whereby the processed product accumulated in the laminated body is processed at a processing speed and its distribution. Can be prevented.

According to a second aspect of the present invention, the laminate is
2. The electrolytic processing apparatus according to claim 1, wherein at least one of the layers has an ion exchanger having at least one of a cation exchange group and an anion exchange group. Depending on the type of functional group of the ion exchange material, the type of material to be processed that can be removed and the processing efficiency thereof change. For this reason, it is desirable to change the exchange group of the ion exchange material depending on the object to be processed, whereby the range of the material to be processed can be expanded.

According to a third aspect of the present invention, the laminate is
3. The electrolytic processing apparatus according to claim 1, wherein at least one of the layers has a water-permeable laminated material. The water permeability of the laminate is related to the removal efficiency of the processed product generated by the electrolytic reaction, and thus the stability of the electrolytic reaction. The better the water permeability, the higher the removal efficiency. Therefore, a stable electrolytic reaction can be performed by using a laminate having good water permeability.

The invention according to claim 4 is the electrolytic processing apparatus according to any one of claims 1 to 3, wherein at least one layer of the laminated body has a laminated material having high hardness. . The hardness of the laminated body is related to the flatness of the work piece, and the higher the hardness of the laminated body, the higher the flatness of the surface of the work piece. Therefore, the flatness of the workpiece can be enhanced by using a laminate having high hardness.

According to a fifth aspect of the invention, in the laminated body,
The electrolytic processing apparatus according to any one of claims 1 to 4, wherein at least the outermost surface layer facing the workpiece has a laminated material having high hardness. Thereby, the hardness of the contact surface of the laminate with the workpiece can be increased, and the flatness of the workpiece can be increased.

According to a sixth aspect of the present invention, in the laminated body,
At least the outermost surface layer facing the workpiece has a laminated material having surface smoothness.
It is an electrolytic processing apparatus in any one of 4 thru | or 4. The surface smoothness of the laminate is related to the flatness of the workpiece, and the better the surface smoothness of the laminate, the higher the flatness of the workpiece.
Therefore, the flatness of the workpiece can be increased by using a laminate having a good surface smoothness as the laminate forming at least the outermost surface layer facing the workpiece.

The invention according to claim 7 is characterized in that the laminated material constituting the laminated body comprises a woven cloth, a net, an ion exchange membrane or a polishing pad for chemical mechanical polishing. The electrolytic processing apparatus according to any one of 6 above.

According to an eighth aspect of the present invention, there is provided a machining electrode which can be brought close to the workpiece, a power feeding electrode for feeding power to the workpiece, a space between the workpiece and the machining electrode, or a workpiece and the power feeding. An ion exchanger having a single-layer or laminated structure arranged between electrodes, the ion exchanger having a plurality of divided surfaces facing or in contact with the workpiece on the surface of the workpiece, and the ions. A fluid supply unit that supplies a fluid between a workpiece on which an exchange body is present and at least one of the processing electrode and the power supply electrode, and a power supply that applies a voltage between the processing electrode and the power supply electrode It is an electrolytic processing apparatus characterized in that. This allows the plurality of divided surfaces of the ion exchanger to pass through each region of the workpiece surface,
Without subdividing the electrode itself, the same effect as when subdividing the electrode is obtained, and the processing speed can be averaged (uniformity).

According to a ninth aspect of the present invention, the divided surface of the ion exchanger is provided on the surface of the concave portion and the convex portion of the convex portion provided on the surface of the ion exchanger on the workpiece side. 9. The electrolytic processing device according to claim 8. This makes it possible to provide a large number of dividing surfaces on the surface of the ion exchanger with a relatively simple structure such as providing concave portions and convex portions on the surface of the ion exchanger.

According to a tenth aspect of the invention, the convex portion is
The electrolytic processing apparatus according to claim 9, wherein the electrolytic processing apparatus is formed by molding. Thereby, for example, in an ion exchanger composed of a laminate having a laminated structure,
By forming the ion exchanger located in the outermost surface layer into a desired shape and laminating it, a large number of divided surfaces can be provided on the surface of the ion exchanger.

According to an eleventh aspect of the invention, the recess is
The electrolytic processing apparatus according to claim 9, comprising a processed groove formed on the surface of the ion exchanger. Thus, for example, by performing groove processing on the surface of the single-layer structure ion exchanger, it is possible to provide a large number of divided surfaces on the surface of the ion exchanger.

The invention as set forth in claim 12 is the electrolytic processing apparatus as set forth in claim 11, which has a hole for supplying a fluid to the recess or for sucking a fluid from the recess. As a result, for example, by providing recesses in a lattice shape or in a continuous shape over the entire surface of the ion exchanger, the liquid is spread through the recesses over almost the entire area of the ion exchanger and the workpiece. be able to.

According to a thirteenth aspect of the present invention, there is provided the electrolytic processing apparatus according to any one of the eighth to twelfth aspects, wherein the divided surface is formed in a rectangular shape or a circular shape. This dividing surface can be formed in any shape such as a rectangular shape or a circular shape, and may be evenly distributed on the surface of the ion exchanger, and it may be randomly distributed such as scattered dots, or may have a certain regularity. You may make it distribute with.

[0027]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. In the following example, a substrate is used as a work piece, and an electrolytic processing apparatus (electrolytic polishing apparatus) is configured to remove (polish) copper deposited on the surface of the substrate.
However, it can be applied to other than the board,
Further, it goes without saying that it can be applied to other electrolytic processing.

1 and 2 show an electrolytic processing apparatus 36 according to the first embodiment of the present invention. This electrolytic processing device 36
Is a disk-shaped insulator made up of a fan-shaped substrate holding portion 46 vertically attached to the free end of a horizontally swingable swinging arm 44 for attracting and holding the substrate W downward (face down). The machining electrode 50 and the power feeding electrode 52 are vertically provided with electrode portions 48 in which the surface (upper surface) of the machining electrode 50 and the power feeding electrode 52 are exposed and are alternately embedded. The upper surface of the electrode portion 48 integrally covers the surfaces of the processing electrode 50 and the power feeding electrode 52,
An ion exchanger 56 composed of a laminated body is attached.
Here, in this example, as the electrode portion 48 having the processing electrode 50 and the power feeding electrode 52, one having a diameter that is at least twice the diameter of the substrate W held by the substrate holding portion 46 is used,
An example in which the entire surface of the substrate W is electrolytically processed is shown.

The swing arm 44 is connected to the upper end of a swing shaft 66 that moves up and down via a ball screw 62 as the vertical movement motor 60 is driven, and that rotates as the swing motor 64 is driven. . The substrate holder 46 is connected to a rotation motor 68 attached to the free end of the swing arm 44,
The motor 68 for rotation rotates (rotates) according to the drive of the motor 68 for rotation.

The electrode portion 48 is directly connected to the hollow motor 70, and is rotated (rotated) as the hollow motor 70 is driven. In the central part of the electrode part 48, pure water,
More preferably, a through hole 48a is provided as a pure water supply unit that supplies ultrapure water. And this through hole 48
The a is connected to a pure water supply pipe 72 extending inside the hollow portion of the hollow motor 70. Pure water or ultrapure water is supplied through the through holes 48a, and then is supplied to the entire processed surface through the water-absorbing ion exchanger 56. Also,
A plurality of through holes 48a connected from the pure water supply pipe 72 may be provided so that the machining liquid can be easily spread over the entire machining surface.

A pure water nozzle 74 is disposed above the electrode portion 48 and extends along the diameter direction of the electrode portion 48 and serves as a pure water supply portion for supplying pure water or ultrapure water having a plurality of supply ports. Has been done. As a result, pure water or ultrapure water is simultaneously supplied to the surface of the substrate W from above and below the substrate W. Here, pure water has, for example, an electric conductivity (1 atm, 25 ° C. conversion value, the same applies hereinafter) of 10 μS / c.
Ultrapure water is water having a conductivity of 0.
It is water of 1 μS / cm or less. A liquid having an electric conductivity of 500 μS / cm or less or an arbitrary electrolytic solution may be used instead of pure water or ultrapure water. By supplying the electrolytic solution during processing, processing instability due to processing products, gas dissolution, etc. can be removed, and uniform and reproducible processing can be obtained.

In this example, a plurality of fan-shaped electrode plates 76 are arranged in the electrode portion 48 along the circumferential direction, and the cathodes and anodes of the power supply 80 are alternately connected to the electrode plates 76 via slip rings 78. By doing so, the electrode plate 76 connected to the cathode of the power supply 80 becomes the processing electrode 50, and the electrode plate 7 connected to the anode
6 serves as the power supply electrode 52. This is because, for example, in the case of copper, an electrolytic processing action occurs on the cathode side, and depending on the material to be processed, the cathode side may be the power feeding electrode and the anode side may be the processing electrode. That is, when the material to be processed is, for example, copper, molybdenum, or iron, an electrolytic processing action occurs on the cathode side, so that the power source 80
The electrode plate 76 connected to the cathode of No. 2 serves as the processing electrode 50, and the electrode plate 76 connected to the anode serves as the feeding electrode 52. On the other hand, for example, for aluminum and silicon,
Since the electrolytic processing action occurs on the anode side, the electrode connected to the anode of the electrode can be used as the processing electrode and the cathode side can be used as the power feeding electrode.

As described above, the processing electrode 50 and the feeding electrode 52
By alternately providing and dividing the electrode portion 48 along the circumferential direction of the electrode portion 48, it is possible to process the entire surface of the substrate without the need for a fixed power feeding portion to the conductor film (workpiece) of the substrate. Become. Further, by changing the positive and negative in a pulsed or periodic (alternating current) condition, the electrolytic product can be dissolved and the flatness can be improved by the multiplicity of repeated processing.

Here, the processing electrode 50 and the feeding electrode 52
In general, due to the electrolytic reaction, oxidation or elution of the electrode becomes a problem. Therefore, as a material for the power supply electrode 52,
It is preferable to use carbon, a relatively inert noble metal, a conductive oxide or a conductive ceramic rather than a metal or metal compound widely used for electrodes. As an electrode using this precious metal as a material, for example, titanium is used as the base electrode material, and platinum or iridium is attached to the surface by plating or coating, and it is sintered at a high temperature and treated to maintain stability and strength. There are some. Ceramic products are generally obtained by heat treatment using an inorganic material as a raw material, and various non-metal / metal oxides / carbides / nitrides are used as raw materials to produce products having various characteristics. Some of these ceramics have conductivity. When the electrode oxidizes, the electric resistance value of the electrode increases and the applied voltage rises.However, by protecting the electrode surface with a material such as platinum that is difficult to oxidize or a conductive oxide such as iridium oxide, It is possible to prevent an increase in electric resistance due to the oxidation of the electrode material.

The ion exchanger 56 composed of a laminated body comprises a pair of strongly acidic cation exchange fibers 56a, 56 as a laminated material.
b and a strongly acidic cation exchange membrane 56c sandwiched between the strongly acidic cation exchange fibers 56a and 56b. The ion exchanger (laminate) 56 has good water permeability and high hardness, and the exposed surface (upper surface) facing the substrate W has good smoothness.

Each laminated material 5 of the ion exchanger (laminated body) 56
6a, 56b, and 56c preferably carry a strongly acidic cation exchange group (sulfonic acid group), but may also carry a weakly acidic cation exchange group (carboxyl group).
In addition, a strongly basic anion exchange group (quaternary ammonium group)
Or a weakly basic anion exchange group (a tertiary or lower amino group) may be carried.

Here, for example, a non-woven fabric having a strong base anion exchange ability has a fiber diameter of 20 to 50 μm and a porosity of about 9
By a so-called radiation graft polymerization method in which 0% polyolefin non-woven fabric is subjected to graft polymerization after γ-ray irradiation,
It is prepared by introducing a graft chain and then aminating the introduced graft chain to introduce a quaternary ammonium group. The capacity of the ion-exchange groups introduced is determined by the amount of graft chains introduced. To carry out the graft polymerization, for example, acrylic acid, styrene, glycidyl methacrylate,
Furthermore, by using monomers such as sodium styrenesulfonate and chloromethylstyrene, and controlling the concentration of these monomers, the reaction temperature and the reaction time, the amount of grafts to be polymerized can be controlled. Therefore, the ratio of the weight after the graft polymerization to the weight of the material before the graft polymerization is called the graft ratio. This graft ratio can be up to 500%, and the ion exchange groups introduced after the graft polymerization are , A maximum of 5 meq / g is possible.

The non-woven fabric having a strong acidic cation exchange ability is prepared by the same method as the above-mentioned method of giving a strong basic anion exchange ability to a polyolefin non-woven fabric having a fiber diameter of 20 to 50 μm and a porosity of about 90%. It is produced by introducing a graft chain by a so-called radiation graft polymerization method of irradiating with and then performing a graft polymerization, and then treating the introduced graft chain with, for example, heated sulfuric acid to introduce a sulfonic acid group. Further, a phosphate group can be introduced by treating with heated phosphoric acid. Here, the graft ratio can be up to 500%, and the ion exchange groups introduced after the graft polymerization can be up to 5 meq / g.

Incidentally, each laminated material 56 of the ion exchanger 56
Examples of the material of a, 56b, 56c include polyolefin-based polymers such as polyethylene and polypropylene, and other organic polymers. In addition to the non-woven fabric, examples of the material form include woven fabric, net, sheet, porous material, short fiber and the like.

Here, polyethylene or polypropylene generates radicals in the material by irradiating the material with radiation (γ ray and electron beam) first (pre-irradiation), and then reacts with the monomer to perform graft polymerization. be able to. As a result, a graft chain having high uniformity and less impurities can be formed. On the other hand, other organic polymers can be radically polymerized by impregnating a monomer and irradiating (simultaneous irradiation) with radiation (γ ray, electron beam, ultraviolet ray).
In this case, it lacks uniformity but can be applied to most materials.

As described above, the laminated materials 56a, 56b, 56c of the ion exchanger 56 are made of a non-woven fabric having anion exchange ability or cation exchange ability, so that a liquid such as pure water or ultrapure water or an electrolytic solution can be obtained. Can freely move inside the non-woven fabric and easily reach the active site having a water splitting catalytic action inside the non-woven fabric, and many water molecules are dissociated into hydrogen ions and hydroxide ions. . Furthermore, since the hydroxide ions generated by dissociation are efficiently carried to the surface of the substrate W as the liquid such as pure water or ultrapure water or the electrolyte moves, a high current can be obtained even at a low applied voltage.

Here, each laminated material 56 of the ion exchanger 56
When a, 56b, and 56c are made up of only those having anion exchange ability or cation exchange ability, not only the material to be electroprocessed can be limited, but also the polarity easily causes impurities. Therefore, the anion exchanger having anion exchange ability and the cation exchanger having cation exchange ability are polymerized, or each of the laminated materials 56a, 56b, 56c of the ion exchanger 56 has both anion exchange ability and cation exchange ability. An exchange group may be added, which expands the range of the material to be processed, and
It is possible to make it difficult for impurities to be generated.

Further, the ion exchanger 56 is made of non-woven fabric, woven fabric,
By forming a multilayer structure in which a plurality of ion-exchange materials such as a porous membrane are stacked, the total ion-exchange capacity of the ion-exchanger 56 is increased, and, for example, when removing (polishing) copper, an oxide is used. It is possible to suppress the generation of the oxide and prevent the oxide from affecting the processing rate. That is, when the total ion exchange capacity of the ion exchanger 56 is smaller than the amount of copper ions taken in at the stage of removal processing, oxides are generated on the surface or inside of the ion exchanger, and the processing rate increases. affect. It is considered that the cause of this is that the amount of ion-exchange groups in the ion-exchanger has an effect, and that copper ions having a capacity over the above amount become oxides. Therefore, it is possible to suppress the generation of oxides by increasing the total ion exchange capacity of the ion exchanger having a multilayer structure in which a plurality of ion exchange materials are stacked.

Here, the ion exchanger 56 has the following 4
Points are required. Removal of processed products (including gas). This is because it affects the stability of the processing rate and the uniformity of the processing rate distribution. Therefore, it is desirable to use an ion exchanger having "water permeability" and "water absorption". Here, "water permeability" means macroscopic permeability. That is, even if the material itself has no water permeability, water can pass by cutting the holes and grooves in the member, and thus water permeability can be imparted. On the other hand, "water absorption" means the property that water permeates the material.

Processing rate stability. In order to stabilize the processing rate, it is considered desirable to stack a large number of ion exchange materials to secure the ion exchange capacity. Flatness of processed surface (capability to eliminate steps). In order to secure the flatness of the processed surface, it is considered desirable that the processed surface of the ion exchanger has good surface smoothness. It is considered that the harder the member, the higher the flatness of the machined surface (step eliminating ability).
Long life. With respect to mechanical life, it is believed that highly abrasion resistant ion exchange materials are desirable.

Therefore, the ion exchanger 56 is "water-permeable".
It is even better to have “water absorption”. Furthermore, it is desirable that at least the laminated material facing the work piece has high hardness and has good surface smoothness. For example, C
Polyurethane foam (IC1000 / Rodale Co.) used as a pad for MP has hardness,
Moreover, since it has excellent abrasion resistance, it can be used as a laminated material of the ion exchanger 56 by providing a large number of through holes. A resin plate material may be used by perforating it with holes. Of course, it is even better if the material has "water absorption". Here, "high hardness" means high rigidity,
It also means that the compression modulus is low. By using a material having a high hardness, it becomes difficult for the processing member to follow fine irregularities on the surface of a workpiece such as a pattern wafer, and therefore only the convex portions of the pattern can be easily removed selectively. A laminated material having high hardness is preferably used for the outermost surface layer facing the workpiece. When using a plurality of different laminated materials, a laminated material having higher hardness than other layers is used for at least one layer. When it is desired to obtain the hardness of the entire laminated body, a plurality of the same laminated materials having high hardness may be stacked and used.

The phrase "having surface smoothness" means that the surface unevenness is small. That is, similarly to the above, the laminated body is less likely to come into contact with the concave portion of the pattern wafer or the like that is the object to be processed, so that only the convex portion of the pattern is easily removed selectively. The laminated material having surface smoothness is particularly preferably used for the outermost surface layer facing the object to be processed, but a plurality of laminated materials having surface smoothness may be stacked and used.

Further, as shown in FIG. 2, the ion exchanger 5
A reproducing section 84 for reproducing 6 is provided. Playback unit 84
Is a swing arm 86 having the same structure as the swing arm 44, which is provided at a position opposite to the swing arm 44 holding the substrate holding portion 46 with the electrode portion 48 interposed therebetween, and a free end of the swing arm 86. The reproducing head 88 is held. And
A potential opposite to that used during processing is applied to the ion exchanger 56 via the power source 80 (see FIG. 1) to promote dissolution of deposits such as copper adhered to the ion exchanger 56, thereby performing ion exchange during processing. The body 56 can be regenerated. in this case,
The regenerated ion exchanger 56 is rinsed with pure water or ultrapure water supplied to the upper surface of the electrode portion 48.

Next, the electrolytic processing by the electrolytic processing apparatus 36 will be described. First, for example, as shown in FIG. 13B, a substrate W having a copper film 6 formed on its surface as a conductor film (processed portion) is adsorbed and held by a substrate holding portion 46 of an electrolytic processing apparatus 36, and the swing arm 44 is held. The substrate holder 46 is swung to move it to a processing position immediately above the electrode portion 48. Next, the vertical movement motor 60 is driven to lower the substrate holding portion 46, and the substrate W held by the substrate holding portion 46 is moved to the electrode portion 48.
Is brought into contact with or brought close to the surface of the ion exchanger 56 attached to the upper surface of the.

In this state, the power source 80 is connected to apply a predetermined voltage between the processing electrode 50 and the power feeding electrode 52, and the substrate holding portion 46 and the electrode portion 48 are rotated together. At the same time, pure water or ultrapure water is applied to the upper surface of the electrode section 48 from the lower side of the electrode section 48 through the through hole 48a, and pure water or ultrapure water is applied to the upper surface of the electrode section 48 from the upper side of the electrode section 48 by the pure water nozzle 74. Ultrapure water is simultaneously supplied to fill the space between the processing electrode 50 and the power supply electrode 52 and the substrate W with pure water or ultrapure water. Thus, the electrolytic processing of the conductor film (copper film 6) provided on the substrate W is performed by the hydrogen ions or hydroxide ions generated by the ion exchanger 56.

That is, pure water or ultrapure water is used as an ion exchanger.
OH in 56 catalysis⁻Ion and H ⁺Dissociates into ions,
This OH⁻Ions should transfer charge near the machining electrode 50.
OH radicals generated by are formed on the copper film 6 of the substrate W.
This removal (polishing) process is performed. At this time, power supply
H generated at the electrode 52_TwoGas is a strong acid cation
It is blocked by the exchange membrane 56c and is caused by the rotation of the electrode part 48.
It is discharged to the outside by the flow of pure water or ultrapure water.

The difference between the ion exchange membrane and the ion exchange fiber is
Basically, it is the difference in the morphology of the base material with ion-exchange groups (basically the same catalytic effect for promoting the dissociation reaction of water). In the present invention, the difference in water permeability is the first. That is, since the ion exchange membrane is in the form of a membrane (such as an OHP sheet), it has poor water permeability, and therefore has low permeability of gas generated by the electrode reaction. In addition, since the ion-exchange fiber is fibrous (for example, gauze), it has excellent water permeability, and therefore has high permeability to the gas generated by the electrode reaction. Therefore, in the present invention, only ions are allowed to pass, but an ion exchange membrane is inserted between the electrodes in order to block the gas generated at the cathode.

Here, by allowing pure water or ultrapure water to flow inside the ion exchanger 56, sufficient functional groups (a sulfonic acid group in a strongly acidic cation exchange material) to accelerate the dissociation reaction of water can be obtained. Water is supplied to increase the dissociation amount of water molecules, and the processing products (including gas) generated by the reaction with hydroxide ions (or OH radicals) are removed by the flow of water to improve processing efficiency. be able to. Therefore, the flow of pure water or ultrapure water is necessary, and it is desirable that the flow of pure water or ultrapure water be uniform and uniform. Further, it is possible to achieve the uniformity and uniformity of removal of the processed product, and thus the uniformity and uniformity of the processing efficiency.

According to this example, since the ion exchanger 56 is formed of a laminated body having a laminated structure, the total ion exchange capacity of the ion exchanger (laminated body) 56 is increased,
As a result, the processed products (oxides and ions) generated by the electrolytic reaction are prevented from being accumulated in the ion exchanger 56 in excess of this storage capacity, and the form of the processed products accumulated in the ion exchanger 56 is changed. It can be changed to prevent it from affecting the processing speed and its distribution. Further, by regenerating the ion exchanger 56 during processing or during a processing interval and removing the processed product accumulated in the ion exchanger 56 from the outside of the ion exchanger 56, the ion exchanger 56 is accumulated in the ion exchanger 56. The processed product thus produced can be prevented from affecting the processing speed and its distribution.

Further, as the ion exchanger 56, one having a high hardness, one having a good surface smoothness, or a combination thereof is used to improve the flatness of the workpiece. Can be increased. At this time, the processing electrode 50
The end point (processing end point) is detected by monitoring the voltage applied between the power supply electrode 52 and the power supply electrode 52, or the current flowing between them by the monitor unit. That is, when electrolytic processing is performed in the state where the same voltage (current) is applied, a difference occurs in the current (applied voltage) that flows depending on the material. Therefore, the endpoint can be reliably detected by monitoring the change in the current or voltage.

After the electrolytic processing is completed, the power supply 80 is disconnected to stop the rotation of the substrate holding section 46 and the electrode section 48, and then the substrate holding section 46 is raised to process the processed substrate to the next step. Transport to. In this example, the electrode unit 4
An example is shown in which pure water, preferably ultrapure water, is supplied between the substrate 8 and the substrate W. By performing electrolytic processing using pure water or ultrapure water that does not contain an electrolyte, it is possible to prevent excess impurities such as electrolyte from adhering to or remaining on the surface of the substrate W. . Further, the copper ions and the like dissolved by electrolysis are immediately captured by the ion exchanger 56 in the ion exchange reaction, so that the dissolved copper ions and the like are re-precipitated on other portions of the substrate W or oxidized to form fine particles. The surface of the substrate W is not contaminated.

Since ultrapure water has a large specific resistance and makes it difficult for current to flow, it is possible to shorten the distance between the electrode and the work piece as much as possible or to sandwich an ion exchanger between the electrode and the work piece. Although the electric resistance is reduced, the electric resistance can be further reduced by further combining the electrolytic solution to reduce the power consumption. In machining with an electrolytic solution, the part to be machined is slightly wider than the machining electrode, but with the combination of ultrapure water and an ion exchanger, almost no current flows in ultrapure water. Only the area where the processing electrode and the ion exchanger of the workpiece are projected is processed.

Further, instead of pure water or ultrapure water, pure water is used.
Alternatively, you may use an electrolyte solution in which an electrolyte is added to ultrapure water.
Yes. By using an electrolytic solution, the electrical resistance is further reduced.
Power consumption can be reduced. As this electrolyte
Is, for example, NaCl or Na _TwoSO_FourNeutral salts such as HC
l and H_TwoSO_FourAcid such as ammonia, and an alkali such as ammonia.
A solution such as liquid can be used.
You can select and use it. Substrate when using electrolyte
A small gap is provided between W and the ion exchanger 56 to prevent contact.
It is preferable to use touch.

Further, instead of pure water or ultrapure water, a surfactant or the like is added to pure water or ultrapure water so that the electric conductivity is 500 μS / cm or less, preferably 50 μS / cm or less, and more preferably May use a liquid of 0.1 μS / cm or less (specific resistance of 10 MΩ · cm or more). In this way, by adding the surfactant to pure water or ultrapure water, a layer having a uniform suppressing action for preventing the movement of ions is formed at the interface between the substrate W and the ion exchanger 56. It is possible to reduce the concentration of ion exchange (melting of metal) and improve the flatness of the processed surface. Here, the surfactant concentration is preferably 100 ppm or less. If the value of electric conductivity is too high, the current efficiency is lowered and the processing speed is slowed, but it is 500 μS / cm or less, preferably 50
A desired processing speed can be obtained by using a liquid having an electric conductivity of μS / cm or less, and more preferably 0.1 μS / cm or less.

Further, by sandwiching the ion exchanger 56 between the substrate W and the processing electrode 50 and the power supply electrode 52, the processing speed is greatly improved. That is, the ultrapure water electrochemical processing is based on the chemical interaction between hydroxide ions in the ultrapure water and the material to be processed. However, the concentration of hydroxide ion, which is a reactive species contained in ultrapure water, is as small as 10 ⁻⁷ mol / L at room temperature and atmospheric pressure,
It is conceivable that the removal processing efficiency may decrease due to reactions other than the removal processing reaction (such as oxide film formation). Therefore, in order to carry out the removal processing reaction with high efficiency, it is necessary to increase hydroxide ions. Therefore, as a method of increasing hydroxide ions, there is a method of accelerating a dissociation reaction of ultrapure water with a catalyst material, and an effective catalyst material thereof is an ion exchanger. Specifically, the activation energy associated with the dissociation reaction of water molecules is reduced by the interaction between the water molecules and the functional groups in the ion exchanger. Thereby, dissociation of water can be promoted and the processing speed can be improved.

Further, in this example, the ion exchanger 56 is brought into contact with or close to the substrate W during electrolytic processing. When the ion exchanger 56 and the substrate W are close to each other,
Although it depends on the size of this interval, the electric resistance is large to some extent, and therefore the voltage becomes large when the required current density is applied. However, on the other hand, because it is non-contact,
A flow of pure water or ultrapure water along the surface of the substrate W is easily formed, and the reaction product on the surface of the substrate can be removed with high efficiency. On the other hand, when the ion exchanger 56 is brought into contact with the substrate W, the electric resistance becomes extremely small, the applied voltage can be small, and the power consumption can be reduced.

If the voltage is increased to increase the current density in order to increase the processing speed, electric discharge may occur when the resistance between the electrode and the substrate (workpiece) is large. When electric discharge occurs, pitching occurs on the surface of the work piece, making it difficult to make the work surface uniform and flat. On the other hand, when the ion exchanger 56 is brought into contact with the substrate W, the electric resistance is extremely small, and thus such discharge can be prevented.

Here, for example, when electrolytic processing of copper is performed by using an ion exchanger 56 having a cation exchange group, the copper is converted to the ion exchange group of the ion exchanger (cation exchanger) 56 after the processing is completed. Since it is saturated, the processing efficiency at the time of the next processing becomes poor. Further, when electrolytic processing of copper is performed using an ion exchanger 56 having an anion exchange group, fine particles of copper oxide are generated and adhered to the surface of the ion exchanger (anion exchanger) 56. , There is a risk of contaminating the surface of the next processed substrate.

Therefore, in such a case, a potential opposite to that at the time of processing is applied to the ion exchanger 56 through the power source 80, and the deposit such as copper attached to the ion exchanger 56 through the reproducing head 88. By promoting dissolution, the ion exchanger 56 is regenerated during processing. In this case, the regenerated ion exchanger 56 is rinsed with pure water or ultrapure water supplied to the upper surface of the electrode portion 48. The electrode unit 48 and the substrate holding unit 46 are not limited to the above-mentioned movement. For example, either the electrode portion or the substrate holder may orbitally move (also referred to as non-rotating motion or scrolling motion). The means described above is not particularly limited as long as relative motion is generated between the laminated body attached to the electrodes and the substrate.

3 and 4 show an electrolytic processing apparatus 36b according to the second embodiment of the present invention. This shifting and rotation center O ₂ of the rotation of the electrode portions 48 center O ₁ and the substrate holder 46 by a predetermined distance d, the electrode unit 48 is rotated (rotation) around a rotation center O _1, the substrate holder 46 is adapted to rotate (rotate) around the rotation center O ₂ . Further, the power supply 80 is electrically connected to the machining electrode 50 and the power feeding electrode 52 via the slip ring 78. Furthermore, in this example,
As the electrode portion 48, the diameter thereof is slightly larger than the diameter of the substrate holding portion 46, and the electrode portion 48 is centered on the rotation center O ₁ .
Even if the substrate holding unit 46 rotates (rotates) about the rotation center O ₂ , the electrode unit 48 is used to cover the entire surface of the substrate W held by the substrate holding unit 46.

In this electrolytic processing apparatus 36b, the substrate W is rotated (rotated) via the substrate holding portion 46, and at the same time, the hollow motor 70 is driven to rotate (rotate) the electrode portion 48 while rotating the electrode portion. By supplying pure water or ultrapure water to the upper surface of 48 and applying a predetermined voltage between the processing electrode 50 and the feeding electrode 52, the surface of the substrate W can be electrolytically processed.

5 and 6 show an electrolytic processing apparatus 36d according to the third embodiment of the present invention. This is achieved by adopting a so-called face-up method in which the vertical position relationship between the substrate holding portion 46 and the electrode portion 48 in each of the above-described embodiments is reversed and the surface of the substrate W is held upward so that the surface (upper surface) of the substrate is used.
It is designed to be electrolytically processed. That is, the substrate holding unit 46 arranged below holds and holds the substrate W with its surface facing upward, and rotates (spins) as the rotation motor 68 is driven. On the other hand, the electrode portion 48 having the processing electrode 50 and the power feeding electrode 52, and the processing electrode 50 and the power feeding electrode 52 covered with the ion exchanger 56 made of a laminated body is disposed above the substrate holding portion 46 and faces downward. And is held at the free end of the swing arm 44, and rotates (spins) as the hollow motor 70 is driven. Then, the wiring extending from the power source 80 reaches the slip ring 78 through the hollow portion provided on the swing shaft 66, and from this slip ring 78 through the hollow portion of the hollow motor 70, the machining electrode 50 and the power feeding electrode 52.
It is designed to supply power to. Then, pure water or ultrapure water is supplied from a pure water supply pipe 72, and is supplied to the surface (upper surface) of the substrate W from above the substrate W through a through hole 48a provided at the center of the electrode portion 48. .

A regeneration section 92 for regenerating the ion exchanger (laminated body) 56 attached to the electrode section 48 is disposed on the side of the substrate holding section 46. The regeneration section 92 has a regeneration tank 94 filled with, for example, a dilute acid solution. Then, the swing arm 44 is swung to move the electrode portion 48 directly above the regeneration tank 94, and then is lowered to move the electrode portion 48.
Of at least the ion exchanger 56 is immersed in the acid solution in the regeneration tank 94. In this state, the electrode plate 76 is attached to the ion exchanger 56 by applying a potential opposite to that at the time of machining, that is, connecting the machining electrode 50 to the anode of the power source 80 and the power feeding electrode 52 to the cathode of the power source 80. The ion exchanger 56 is regenerated by promoting the dissolution of deposits such as copper. The ion exchanger 56 after this regeneration is rinsed with, for example, ultrapure water.

Further, in this embodiment, the diameter of the electrode portion 48 is set sufficiently larger than the diameter of the substrate W held by the substrate holding portion 46. Then, the electrode part 48 is lowered to bring the ion exchanger 56 into contact with or close to the surface of the substrate W held by the substrate holding part 46. In this state, while supplying pure water or ultrapure water to the upper surface of the substrate, A predetermined voltage is applied between the processing electrode 50 and the power supply electrode 52 to rotate (rotate) both the substrate holding part 46 and the electrode part 48, and at the same time, the swing arm 44 is swung to move the electrode part 48 to the substrate W. The surface of the substrate W is subjected to electrolytic processing by being moved along the upper surface of.

FIGS. 7 and 8 show an electrolytic processing apparatus 36e according to another fourth embodiment of the present invention. This is the electrode part 4
As the substrate 8, a substrate having a diameter sufficiently smaller than the diameter of the substrate W held by the substrate holding portion 46 is used.
The entire surface of the electrode is not completely covered with the electrode portion 48. Other configurations are similar to those of the embodiment shown in FIGS. 5 and 6. With this structure, the electrode section 48 can be made compact and compact, and
It is possible to prevent the generated gas from adhering to the substrate.

In each of the above examples, the ion-exchange material is laminated to form the ion-exchanger 56 having a laminated structure. However, the exposed surface of the ion-exchanger 56 having such a structure is made water-permeable. And preferably has a high hardness and is covered with a pad (not shown) having a surface smoothness. As described above, by covering the exposed surface of the ion exchanger 56 with the water-permeable pad, the exposed surface of the ion exchanger 56 is prevented from directly contacting the material to be processed, and the mechanical life is also improved. it can. Further, it is possible to simultaneously perform CMP by supplying the slurry from the outside.

FIG. 9 shows each of the above-mentioned electrolytic processing devices 36a to 36a.
6e shows another ion exchanger 100 used in 6e. The ion exchanger 100 includes a plate-shaped base side ion exchanger 102 serving as a base, and the base side ion exchanger 10.
No. 2 substrate (workpiece) W, and a large number of square columnar surface layer side ion exchangers 104 stacked on the surface on the W side. Then, the surface layer side ion exchangers 104 are vertically and horizontally arranged with a predetermined space therebetween, so that the surface layer side ion exchangers 104 linearly extend vertically and horizontally in a region sandwiched by the peripheral walls of the surface layer side ion exchanger 104. Recesses 106 are formed, and further, each surface layer side ion exchanger 104 forms a protrusion, and this surface is
A plurality of rectangular division surfaces 108 facing or in contact with the substrate W are formed on the surface of the substrate W or the like on the side of the workpiece. The surface layer side ion exchanger 104 is formed, for example, by molding.

As a result, at the time of electrolytic processing, a plurality of rectangular divided surfaces 108 formed on the surface of each surface layer side ion exchanger 104 of the ion exchanger 100 pass through each region of the surface of the substrate W. Further, the concave portion 106 functions as a flow path, and the fluid flows along the concave portion 106. In this way, the plurality of division surfaces 108 are provided on the surface of the ion exchanger 100, and the division surfaces 108 pass through the respective regions on the surface of the substrate so that the electrodes are subdivided without subdividing the electrodes themselves. It is possible to obtain an effect similar to that of the above case, and to average the processing speed (uniformity).
Moreover, by providing the recesses 106 in a lattice shape over the entire surface of the ion exchanger 100, the liquid can be spread over almost the entire area of the ion exchanger 100 and the substrate W through the recesses 106.

FIG. 10 shows each of the above-described electrolytic processing devices 36a-36a.
Figure 36 shows yet another ion exchanger 100a used for 36e. The ion exchanger 100a is different from the ion exchanger 100 shown in FIG. 9 in that a cylindrical surface-side ion exchanger 104a is used so that the surface of the ion exchanger 100a is on the side of a workpiece such as the substrate W. A plurality of circular division surfaces 108a facing or in contact with the substrate W are formed on the surface, and the peripheral wall of the surface layer side ion exchanger 104a has no angular recessed portion 10.
This is the point where 6a is partitioned and formed. Other configurations are similar to those shown in FIG. In this surface layer side ion exchanger 104a, it is preferable that the corners of the surface are chamfered and rounded, as shown in FIG. 10 (b), for smooth electrolytic processing. . This also applies to the example shown in FIG. 9 and the following examples.

FIG. 11 shows each of the above-described electrolytic processing devices 36a-36a.
Figure 36 shows yet another ion exchanger 100b used in 36e. The ion exchanger 100b is different from the ion exchanger 100 shown in FIG. 9 in that a fan-shaped surface-side ion exchanger 104b is used, and the fan-shaped surface-side ion exchanger 104b is radially arranged. , This surface constitutes a plurality of fan dividing surfaces 108b facing or in contact with the substrate W on the surface on the side of the workpiece such as the substrate W, and further, the concave portion 106b radially extending on the peripheral wall of the surface layer side ion exchanger 104b. Is the point that is formed. Other configurations are similar to those shown in FIG. In this example, as the surface layer side ion exchanger 104b, one kind of fan-shaped one having the same central angle is used, but a plurality of fan-shaped ones having an arbitrary central angle may be arbitrarily or combined. May be used.

FIG. 12 shows each of the above-described electrolytic processing devices 36a to 36a.
36e shows yet another ion exchanger 110 used in 36e. The ion exchanger 110 has a single-layer structure, and has a grid-like groove formed on the surface of the substrate (workpiece) W side, and the groove-like recess 112 is formed by the groove processing, whereby the recess 112 is formed. The surface of the convex portion 114 surrounded by is formed into a large number of divided surfaces 116. In addition, it goes without saying that the examples shown in FIGS. 10 and 11 may have a single layer structure as in this example.

[0077]

As described above, according to the present invention,
By using stacks to increase the storage capacity (ion exchange capacity in ion exchangers), for example, when processing conductive materials, perform highly efficient and highly flat processing on the surface of the workpiece. You can

[Brief description of drawings]

FIG. 1 is a vertical sectional front view of an electrolytic processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view of FIG.

FIG. 3 is a vertical sectional front view of an electrolytic processing apparatus according to a second embodiment of the present invention.

FIG. 4 is a plan view of FIG.

FIG. 5 is a vertical sectional front view of an electrolytic processing apparatus according to a third embodiment of the present invention.

FIG. 6 is a plan view of FIG.

FIG. 7 is a vertical sectional front view of an electrolytic processing apparatus according to a fourth embodiment of the present invention.

FIG. 8 is a plan view of FIG.

FIG. 9 is a perspective view showing another example of the ion exchanger.

FIG. 10 is a perspective view showing still another example of the ion exchanger.

FIG. 11 is a perspective view showing still another example of the ion exchanger.

FIG. 12 is a perspective view showing still another example of the ion exchanger.

FIG. 13 is a diagram showing an example of forming a copper wiring in the order of steps.

FIG. 14 is a diagram attached to an explanation of the principle of electrolytic processing provided with an ion exchanger.

[Explanation of symbols]

10 Workpiece 12a, 12b Ion exchanger 14 Processing electrode 16 Feed electrode 19 Liquid supply part 22 Hydroxide ion 24 Hydrogen ion 36, 36b, 36d, 36e, 36f, 36g Electrolysis
Processing device 46 Substrate holding part 48 Electrode part 48a Through hole 50 Processing electrode 52 Power supply electrode 56 Ion exchanger (laminate) 56a, 56b Strong acid cation exchange fiber (laminate) 56c Strong acid cation exchange membrane (laminate) 70 Hollow Motor 72 Pure water supply pipe 74 Pure water nozzle 76 Electrode plate 78 Slip ring 80 Power supply 84, 92 Regeneration unit 88 Reproduction head 94 Regeneration tank 100, 100a, 100b, 100c Ion exchanger 102 Base side ion exchanger 104, 104a, 104b Surface layer side ion exchanger 106, 106a, 106b, 112 Recessed portion 108, 108a, 108b, 116 Dividing surface

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Hozumi Yasuda             11-1 Haneda Asahi-cho, Ota-ku, Tokyo Co., Ltd.             Inside the EBARA CORPORATION (72) Inventor Itsuki Takahata             11-1 Haneda Asahi-cho, Ota-ku, Tokyo Co., Ltd.             Inside the EBARA CORPORATION (72) Inventor Kunio Fujiwara             4-2-1 Honfujisawa, Fujisawa City, Kanagawa Prefecture             Inside the EBARA Research Institute (72) Inventor Ikutaro Noji             11-1 Haneda Asahi-cho, Ota-ku, Tokyo Co., Ltd.             Inside the EBARA CORPORATION F-term (reference) 3C059 AA02 AB01 EB08 EC02 GA08                       GC01 HA02

Claims (13)

[Claims] 1. A machining electrode which can be brought close to a workpiece, a power feeding electrode for feeding power to the workpiece, and at least one of between the workpiece and the machining electrode or between the workpiece and the power feeding electrode. A laminated body having a laminated structure, and a fluid supply unit configured to supply a fluid between a workpiece on which the laminated body exists and at least one of the machining electrode or the power feeding electrode; the machining electrode and the power feeding electrode. An electrolytic processing apparatus having a power supply for applying a voltage between the electric processing apparatus and the electric processing apparatus. 2. The laminate has at least one layer thereof,
2. An ion exchanger having at least one of a cation exchange group and an anion exchange group.
The electrolytic processing apparatus described. 3. The laminate has at least one layer thereof,
The electrolytic processing apparatus according to claim 1, further comprising a laminated material having water permeability. 4. The electrolytic processing apparatus according to claim 1, wherein at least one layer of the laminated body has a laminated material having high hardness. 5. The electrolytic processing apparatus according to claim 1, wherein at least the outermost surface layer of the laminated body facing the workpiece has a laminated material having high hardness. 6. The electrolytic processing according to claim 1, wherein at least the outermost surface layer of the laminated body facing the workpiece has a laminated material having surface smoothness. apparatus. 7. The laminated material constituting the laminated body is woven cloth,
7. The electrolytic processing apparatus according to claim 1, comprising a net, an ion exchange membrane, or a polishing pad for chemical mechanical polishing. 8. A machining electrode which can be brought close to a workpiece, a power feeding electrode which feeds power to the workpiece, and a workpiece which is disposed between the workpiece and the machining electrode or between the workpiece and the power feeding electrode. An ion exchanger having a single-layer or laminated structure, which has a plurality of divided surfaces on the surface of the object to be processed facing or in contact with the object, and an object to be processed in which the ion exchanger is present. Electrolytic machining comprising a fluid supply unit for supplying a fluid between an object and at least one of the machining electrode or the power supply electrode, and a power supply for applying a voltage between the machining electrode and the power supply electrode. apparatus. 9. The dividing surface of the ion exchanger is provided on the surface of the concave portion and the convex portion of the convex portion provided on the surface of the ion exchanger on the side of the workpiece. The electrolytic processing apparatus described. 10. The electrolytic processing apparatus according to claim 9, wherein the convex portion is formed by molding. 11. The electrolytic processing apparatus according to claim 9, wherein the recess comprises a processed groove formed on the surface of the ion exchanger. 12. The electrolytic processing apparatus according to claim 11, further comprising a hole for supplying a fluid to the concave portion or sucking a fluid from the concave portion. 13. The electrolytic processing apparatus according to claim 8, wherein the divided surface is formed in a rectangular shape or a circular shape.