SU643099A3 - Схема управлени потенциалом подложки твердых интегральных схем - Google Patents
Схема управлени потенциалом подложки твердых интегральных схемInfo
- Publication number
- SU643099A3 SU643099A3 SU742038403A SU2038403A SU643099A3 SU 643099 A3 SU643099 A3 SU 643099A3 SU 742038403 A SU742038403 A SU 742038403A SU 2038403 A SU2038403 A SU 2038403A SU 643099 A3 SU643099 A3 SU 643099A3
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- potential
- node
- transistor
- circuit
- transistors
- Prior art date
Links
- 239000007787 solid Substances 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- 230000001052 transient effect Effects 0.000 claims 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 241000838698 Togo Species 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Amplifiers (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37527173A | 1973-06-29 | 1973-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU643099A3 true SU643099A3 (ru) | 1979-01-15 |
Family
ID=23480213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU742038403A SU643099A3 (ru) | 1973-06-29 | 1974-06-28 | Схема управлени потенциалом подложки твердых интегральных схем |
Country Status (14)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4030084A (en) * | 1975-11-28 | 1977-06-14 | Honeywell Information Systems, Inc. | Substrate bias voltage generated from refresh oscillator |
| JPS5327374A (en) * | 1976-08-26 | 1978-03-14 | Sharp Corp | High voltage drive metal oxide semiconductor device |
| JPS5482056A (en) * | 1977-12-13 | 1979-06-29 | Nec Corp | Substrate bias voltage generator circuit |
| JPS5513566A (en) * | 1978-07-17 | 1980-01-30 | Hitachi Ltd | Mis field effect semiconductor circuit device |
| US4229667A (en) * | 1978-08-23 | 1980-10-21 | Rockwell International Corporation | Voltage boosting substrate bias generator |
| JPS5559756A (en) * | 1978-10-30 | 1980-05-06 | Fujitsu Ltd | Semiconductor device |
| DE2966592D1 (en) * | 1979-03-05 | 1984-03-01 | Motorola Inc | Substrate bias regulator |
| JPS55162257A (en) * | 1979-06-05 | 1980-12-17 | Fujitsu Ltd | Semiconductor element having substrate bias generator circuit |
| JPS5619676A (en) * | 1979-07-26 | 1981-02-24 | Fujitsu Ltd | Semiconductor device |
| JPS56117390A (en) | 1980-02-16 | 1981-09-14 | Fujitsu Ltd | Semiconductor memory device |
| JPS57199335A (en) * | 1981-06-02 | 1982-12-07 | Toshiba Corp | Generating circuit for substrate bias |
| US4503465A (en) * | 1982-11-24 | 1985-03-05 | Rca Corporation | Analog signal comparator using digital circuitry |
| US4581546A (en) * | 1983-11-02 | 1986-04-08 | Inmos Corporation | CMOS substrate bias generator having only P channel transistors in the charge pump |
| US4571505A (en) * | 1983-11-16 | 1986-02-18 | Inmos Corporation | Method and apparatus of reducing latch-up susceptibility in CMOS integrated circuits |
| US5039877A (en) * | 1990-08-30 | 1991-08-13 | Micron Technology, Inc. | Low current substrate bias generator |
| US5157278A (en) * | 1990-10-30 | 1992-10-20 | Samsung Electronics Co., Ltd. | Substrate voltage generator for semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3609414A (en) * | 1968-08-20 | 1971-09-28 | Ibm | Apparatus for stabilizing field effect transistor thresholds |
| DE1921131C3 (de) * | 1969-04-25 | 1979-01-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Anordnung zur Temperaturkompensation eines als Regel-Stellglied in Verstärkern angeordneten Feldeffekttransistors |
| DE2111979A1 (de) * | 1970-03-13 | 1971-10-21 | Hitachi Ltd | Feldeffekt-Halbleitereinrichtung |
-
1974
- 1974-05-03 GB GB1945474A patent/GB1462935A/en not_active Expired
- 1974-05-10 DE DE2422653A patent/DE2422653C2/de not_active Expired
- 1974-05-15 FR FR7417744A patent/FR2235417B1/fr not_active Expired
- 1974-05-15 IT IT22720/74A patent/IT1012365B/it active
- 1974-05-21 CH CH696474A patent/CH570705A5/xx not_active IP Right Cessation
- 1974-05-28 BE BE144820A patent/BE815619A/xx not_active IP Right Cessation
- 1974-06-04 CA CA201,612A patent/CA1033410A/en not_active Expired
- 1974-06-05 JP JP6300574A patent/JPS5417541B2/ja not_active Expired
- 1974-06-13 SE SE7407783A patent/SE391996B/xx not_active IP Right Cessation
- 1974-06-27 NL NL7408728A patent/NL7408728A/xx unknown
- 1974-06-27 DD DD179526A patent/DD114197A5/xx unknown
- 1974-06-27 ES ES427740A patent/ES427740A1/es not_active Expired
- 1974-06-28 SU SU742038403A patent/SU643099A3/ru active
- 1974-07-12 IL IL45251A patent/IL45251A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE391996B (sv) | 1977-03-07 |
| CA1033410A (en) | 1978-06-20 |
| JPS5024054A (enrdf_load_html_response) | 1975-03-14 |
| FR2235417B1 (enrdf_load_html_response) | 1976-06-25 |
| IT1012365B (it) | 1977-03-10 |
| ES427740A1 (es) | 1976-08-01 |
| DE2422653A1 (de) | 1975-01-16 |
| GB1462935A (en) | 1977-01-26 |
| IL45251A0 (en) | 1974-12-31 |
| BE815619A (fr) | 1974-09-16 |
| FR2235417A1 (enrdf_load_html_response) | 1975-01-24 |
| NL7408728A (enrdf_load_html_response) | 1974-12-31 |
| SE7407783L (enrdf_load_html_response) | 1974-12-30 |
| JPS5417541B2 (enrdf_load_html_response) | 1979-06-30 |
| DD114197A5 (enrdf_load_html_response) | 1975-07-12 |
| IL45251A (en) | 1976-10-31 |
| CH570705A5 (enrdf_load_html_response) | 1975-12-15 |
| DE2422653C2 (de) | 1983-03-31 |
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