SU591959A1 - Cylindrical magnetic domain advancing device - Google Patents
Cylindrical magnetic domain advancing deviceInfo
- Publication number
- SU591959A1 SU591959A1 SU731961353A SU1961353A SU591959A1 SU 591959 A1 SU591959 A1 SU 591959A1 SU 731961353 A SU731961353 A SU 731961353A SU 1961353 A SU1961353 A SU 1961353A SU 591959 A1 SU591959 A1 SU 591959A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- cylindrical magnetic
- magnetic domain
- advancing device
- channel
- cmd
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
(54) УСТРОЙСТВО ДЛЯ ПРОДВИЖЕНИЯ ЦИЛИНДРИЧЕСКИХ МАГНИТНЫХ ДОМЕНОВ(54) DEVICE FOR PROMOTION OF CYLINDRICAL MAGNETIC DOMAINS
22
На чертеже схематически изображено устройство дл продвижени ЦМД.The drawing shows schematically a device for promoting CMD.
Устройство содержит магмитоодноосную феррит-гранатовую пленку 1, на которой расположены каналы продвижени ЦМД 2, ограннченные с двух сторон непрерывными направл ющими элементами 3 с волнообразными кра ми , которые выполнены в виде, тонкого поверхностного сло , имеющего повышенную в сравнении с зоной канала намагниченность насыщени . Благодар изменению намагниченности насыщени и наличию определ емых направл ющими элементами периодических сужений, в канале создаютс последовательные стабильные позиции дл ЦМД 4, отдел емые друг от друга энергетическими барьерами. Преодоление доменами энергетических барьеров может быть осуществлено с помощью TOKOBJ X импульсов , подаваемых, например, по одиопроводной токонесущей цепи 5, проход щей чер(ёз каждую из зон стабильного положени доменов со смещением относительно центра зоны. Разновидностью предложенного технического рещеии каналов продвижени вл етс структура, полученна в результате понижени намагниченности насыщени магнитоодноосной пленки в зоне самого канала при замещении части ионов железа тетраэдрическими ионами, например ионами АР или Оа.The device contains a magnetically single ferrite-garnet film 1 on which CMD 2 promotion channels are located, bounded on both sides by continuous guide elements 3 with wavy edges, which are made in the form of a thin surface layer having a saturation magnetization increased compared to the channel zone. Due to the change in the saturation magnetization and the presence of periodic constrictions defined by the guiding elements, consistent stable positions for the CMD 4 are created in the channel, separated by energy barriers from each other. Overcoming energy barriers with domains can be accomplished using TOKOBJ X pulses applied, for example, through a one-conductor current-carrying circuit 5 passing through (each of the stable areas of the domains shifted relative to the center of the zone. A variation of the proposed technical promotion channel is the structure obtained as a result of a decrease in the saturation magnetization of a magnetically uniaxial film in the zone of the channel itself when part of the iron ions are replaced with tetrahedral ions, for example, AP or Oa ions .
Технологи изготовлени предложенного устройства оуличаетс простотой и может бытьThe manufacturing technology of the proposed device is simple and can be
реализована в услови х массового производства . Формирование каналов продвижени в монокристаллической пленке феррит-граната заключаетс в напылении через маску на поверхность пленки (дл всех ее участков одновременно ) металлов или окислов металлов соответствующих элементов и последующей выдержке монокрасталла в печи при температуре 1л)0 1300°С .implemented in terms of mass production. The formation of advancement channels in a ferrite garnet single crystal film consists in spraying metals or metal oxides of the corresponding elements through a mask onto the surface of the film (for all its sections simultaneously) and subsequent exposure of the mono kristall in the furnace at a temperature of 1-1300 ° C.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU731961353A SU591959A1 (en) | 1973-09-24 | 1973-09-24 | Cylindrical magnetic domain advancing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU731961353A SU591959A1 (en) | 1973-09-24 | 1973-09-24 | Cylindrical magnetic domain advancing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU591959A1 true SU591959A1 (en) | 1978-02-05 |
Family
ID=20565111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU731961353A SU591959A1 (en) | 1973-09-24 | 1973-09-24 | Cylindrical magnetic domain advancing device |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU591959A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1981002806A1 (en) * | 1980-03-25 | 1981-10-01 | Mta Koezponti Fiz Kutato Intez | Propagation-expander-detector circuit for a magnetic bubble memory |
-
1973
- 1973-09-24 SU SU731961353A patent/SU591959A1/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1981002806A1 (en) * | 1980-03-25 | 1981-10-01 | Mta Koezponti Fiz Kutato Intez | Propagation-expander-detector circuit for a magnetic bubble memory |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5224116A (en) | Material of high magnetic flux density one directionally orientated el ectromagnetic steel and its treating method | |
| SU591959A1 (en) | Cylindrical magnetic domain advancing device | |
| JPS5284722A (en) | Thin film magnetic head and its production | |
| JPS5329703A (en) | Production of thin magnetic film | |
| JPS5622217A (en) | Manufacture of magnetic head | |
| JPS5341985A (en) | Vertical type field effect transistor and its production | |
| JPS51114111A (en) | Method of manufacturing magnetic heads | |
| JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
| JPS5387706A (en) | Manufacture of magnetic recording medium | |
| GB1493194A (en) | Registers for propagation of magnetic domains | |
| JPS5387205A (en) | Manufacture of magnetic recording medium | |
| FR2231075A1 (en) | Inscription and erasure of data on magnetic tape - using both magneto inductive and laser methods at reduced concentration | |
| JPS52113216A (en) | Magnetic head | |
| JPS5516463A (en) | Bulb magnetic region element | |
| GB1476489A (en) | Thin film magnetic storage device | |
| JPS5737718A (en) | Magnetic recording medium | |
| JPS5634123A (en) | Manufacture for magnetic head | |
| JPS5319809A (en) | Production of magnetic recording medium | |
| JPS5545192A (en) | Integrated head | |
| JPS52151014A (en) | Thin film magnetic head | |
| JPS5423479A (en) | Manufacture for field effect transistor of insulation gate type | |
| JPS5649573A (en) | Semiconductor device | |
| JPS542110A (en) | Production of floating type magnetic head | |
| JPS55163630A (en) | Magnetic recording medium | |
| JPS5776858A (en) | Manufacture of semiconductor device |