SU513650A3 - Запоминающее устройство - Google Patents
Запоминающее устройствоInfo
- Publication number
- SU513650A3 SU513650A3 SU1710821A SU1710821A SU513650A3 SU 513650 A3 SU513650 A3 SU 513650A3 SU 1710821 A SU1710821 A SU 1710821A SU 1710821 A SU1710821 A SU 1710821A SU 513650 A3 SU513650 A3 SU 513650A3
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- voltage
- transistor
- switch
- outputs
- control element
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 12
- 230000015654 memory Effects 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
- H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Shift Register Type Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8619170A | 1970-11-02 | 1970-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU513650A3 true SU513650A3 (ru) | 1976-05-05 |
Family
ID=22196900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU1710821A SU513650A3 (ru) | 1970-11-02 | 1971-11-01 | Запоминающее устройство |
Country Status (19)
| Country | Link |
|---|---|
| US (1) | US3651492A (enExample) |
| JP (1) | JPS5217978B1 (enExample) |
| AR (1) | AR203076A1 (enExample) |
| AT (1) | AT321004B (enExample) |
| AU (1) | AU445396B2 (enExample) |
| BE (1) | BE774738A (enExample) |
| BR (1) | BR7107233D0 (enExample) |
| CA (1) | CA963576A (enExample) |
| CH (1) | CH539918A (enExample) |
| DE (1) | DE2154025C3 (enExample) |
| DK (1) | DK133026C (enExample) |
| ES (1) | ES396464A1 (enExample) |
| FR (1) | FR2112393B1 (enExample) |
| GB (1) | GB1313068A (enExample) |
| NL (1) | NL7115021A (enExample) |
| NO (1) | NO134235C (enExample) |
| SE (1) | SE364797B (enExample) |
| SU (1) | SU513650A3 (enExample) |
| ZA (1) | ZA716823B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| US3764825A (en) * | 1972-01-10 | 1973-10-09 | R Stewart | Active element memory |
| AT335777B (de) * | 1972-12-19 | 1977-03-25 | Siemens Ag | Regenerierschaltung fur binarsignale nach art eines getasteten flipflops |
| US4168537A (en) * | 1975-05-02 | 1979-09-18 | Tokyo Shibaura Electric Co., Ltd. | Nonvolatile memory system enabling nonvolatile data transfer during power on |
| JPS5228824A (en) * | 1975-08-29 | 1977-03-04 | Toshiba Corp | Multiple storage unit |
| US4095281A (en) * | 1976-03-04 | 1978-06-13 | Rca Corporation | Random access-erasable read only memory cell |
| US4175291A (en) * | 1976-08-16 | 1979-11-20 | Ncr Corporation | Non-volatile random access memory cell |
| US4193128A (en) * | 1978-05-31 | 1980-03-11 | Westinghouse Electric Corp. | High-density memory with non-volatile storage array |
| US4224686A (en) * | 1978-10-02 | 1980-09-23 | Ncr Corporation | Electrically alterable memory cell |
| US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
| JPH03284364A (ja) * | 1990-03-29 | 1991-12-16 | Matsushita Electric Ind Co Ltd | 空気清浄器の放電器 |
| US5640114A (en) * | 1995-12-27 | 1997-06-17 | Vlsi Technology, Inc. | Versatile select and hold scan flip-flop |
| US9640228B2 (en) * | 2014-12-12 | 2017-05-02 | Globalfoundries Inc. | CMOS device with reading circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508211A (en) * | 1967-06-23 | 1970-04-21 | Sperry Rand Corp | Electrically alterable non-destructive readout field effect transistor memory |
| US3530443A (en) * | 1968-11-27 | 1970-09-22 | Fairchild Camera Instr Co | Mos gated resistor memory cell |
| US3549911A (en) * | 1968-12-05 | 1970-12-22 | Rca Corp | Variable threshold level field effect memory device |
| US3579204A (en) * | 1969-03-24 | 1971-05-18 | Sperry Rand Corp | Variable conduction threshold transistor memory circuit insensitive to threshold deviations |
-
1970
- 1970-11-02 US US86191A patent/US3651492A/en not_active Expired - Lifetime
-
1971
- 1971-09-14 CA CA122,840A patent/CA963576A/en not_active Expired
- 1971-10-11 GB GB4717971A patent/GB1313068A/en not_active Expired
- 1971-10-12 ZA ZA716823A patent/ZA716823B/xx unknown
- 1971-10-14 AU AU34578/71A patent/AU445396B2/en not_active Expired
- 1971-10-22 SE SE13459/71A patent/SE364797B/xx unknown
- 1971-10-28 NO NO3996/71A patent/NO134235C/no unknown
- 1971-10-28 ES ES396464A patent/ES396464A1/es not_active Expired
- 1971-10-29 AT AT934571A patent/AT321004B/de not_active IP Right Cessation
- 1971-10-29 DE DE2154025A patent/DE2154025C3/de not_active Expired
- 1971-10-29 BR BR7233/71A patent/BR7107233D0/pt unknown
- 1971-10-29 BE BE774738A patent/BE774738A/xx unknown
- 1971-11-01 NL NL7115021A patent/NL7115021A/xx unknown
- 1971-11-01 SU SU1710821A patent/SU513650A3/ru active
- 1971-11-01 DK DK532871A patent/DK133026C/da active
- 1971-11-02 FR FR7139156A patent/FR2112393B1/fr not_active Expired
- 1971-11-02 CH CH1592971A patent/CH539918A/de not_active IP Right Cessation
- 1971-11-02 JP JP46087548A patent/JPS5217978B1/ja active Pending
- 1971-11-21 AR AR238790A patent/AR203076A1/es active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2112393B1 (enExample) | 1976-09-03 |
| AR203076A1 (es) | 1975-08-14 |
| CH539918A (de) | 1973-07-31 |
| DK133026C (da) | 1976-08-09 |
| BE774738A (fr) | 1972-02-14 |
| US3651492A (en) | 1972-03-21 |
| DE2154025B2 (enExample) | 1975-04-03 |
| NO134235B (enExample) | 1976-05-24 |
| NO134235C (enExample) | 1976-09-01 |
| ZA716823B (en) | 1972-06-28 |
| GB1313068A (en) | 1973-04-11 |
| CA963576A (en) | 1975-02-25 |
| AU445396B2 (en) | 1974-02-21 |
| AT321004B (de) | 1975-05-10 |
| BR7107233D0 (pt) | 1973-04-10 |
| SE364797B (enExample) | 1974-03-04 |
| FR2112393A1 (enExample) | 1972-06-16 |
| NL7115021A (enExample) | 1972-05-04 |
| JPS5217978B1 (enExample) | 1977-05-19 |
| AU3457871A (en) | 1973-04-19 |
| DE2154025C3 (de) | 1975-11-20 |
| ES396464A1 (es) | 1975-02-16 |
| DE2154025A1 (de) | 1972-05-18 |
| DK133026B (da) | 1976-03-08 |
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