SU436033A1 - GLASS FOR CHANNEL EMITTERS - Google Patents
GLASS FOR CHANNEL EMITTERSInfo
- Publication number
- SU436033A1 SU436033A1 SU1848750A SU1848750A SU436033A1 SU 436033 A1 SU436033 A1 SU 436033A1 SU 1848750 A SU1848750 A SU 1848750A SU 1848750 A SU1848750 A SU 1848750A SU 436033 A1 SU436033 A1 SU 436033A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- glass
- temperature
- emitters
- channel emitters
- channel
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
- C03C3/105—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing aluminium
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
Description
Изобретение относитс к составу стекол, используемых в электронике при изготовлении электронных умножителей каналового типа. Известно стекло со вторично-эмиссионным восстановленным слоем, включающее SiOg, PbO, BiaOs, NsLzO. Цель изобретени - обеспечение удельного электрического сопротивлени вторично-эмиссионного сло в диапазоне ом/см. Это достигаетс тем, что стекло дополнительно содержит AlgOs при следующем соотношении указанных компонентов, мол %: SiOz27-75 РЬО+В120з10-55 Al2O3+Na2O 2-30 Соотношение А120з:Ыа2О составл ет от до 1:2. Стекло вар т в сосудах из кварцевого стекла при температуре 1250-1450°С с выдержкой при максимальной температуре 2-3 часа. Отжиг стекла провод т при температуре 350-550°С, а его термообработку при температуре 340-460°С в течение 4 час в атмосфере водорода. При этом на поверхности стекла образуетс вторично-эмиссионный слой с удельным поверхностным электрическим сопротивлением ом/см. Восстановленный слой обладает высокой стабильностью электрических параметров Пример. Дл обеспечени удельного электрического сопротивлени /2-4/-10 ом/см вар т стекло состава, мол. %: SiO260 PbO18 BigOs2 АШз10 NazO10 и Na2O совместно ввод т в стекло. Затем изготовленные из этого стекла эмиттеры подвергают термообработке в атмосфере водорода при температуре 400°С в течение 4 часов. Электрическое сопротивление стекла при прогреве на воздухе при температуре 400°С в течение 1,5 час измен етс в 2 раза. Предмет изобретени Стекло дл каналовых эмиттеров со вторично-эмиссионным восстановленным слоем, включающее SiOa, РЬО, В12Оз, Na2O, отличающеес тем, что, с целью обеспечени удельного электрического сопротивлени вторично-эмиссионного сло в диапазоне 10 ом/см, оно дополнительно содержит АЬОз, при следующем соотношении указанных компонентов , мол. %: SiOz25-75 3 РЬО+В{2Оз10-55 А12Оз+На2О2-30, 4 причем соотношение А12Оз:Ма20-составл ет от 1:1 до 1:2.The invention relates to the composition of glasses used in electronics in the manufacture of electronic channel-type multipliers. Known glass with a secondary emission restored layer, including SiOg, PbO, BiaOs, NsLzO. The purpose of the invention is to provide electrical resistivity of the secondary emission layer in the ohm / cm range. This is achieved by the fact that the glass additionally contains AlgOs in the following ratio of the indicated components, mol%: SiOz27-75 PHO + B120310-55 Al2O3 + Na2O 2-30 The ratio of Al2 O3: Na2O is from 1: 2. The glass is var t in quartz glass vessels at a temperature of 1250-1450 ° C with exposure at a maximum temperature of 2-3 hours. Glass annealing is carried out at a temperature of 350-550 ° C, and its heat treatment at a temperature of 340-460 ° C for 4 hours in an atmosphere of hydrogen. In this case, a secondary emission layer with a specific surface resistance of ohms / cm is formed on the surface of the glass. The restored layer has a high stability of electrical parameters. Example. To provide a resistivity (2-4 / -10 ohm / cm), the glass of the composition is molded, mol. %: SiO260 PbO18 BigOs2 AShz10 NazO10 and Na2O are jointly introduced into the glass. Then, emitters made of this glass are heat treated in a hydrogen atmosphere at a temperature of 400 ° C for 4 hours. The electrical resistance of the glass when heated in air at a temperature of 400 ° C for 1.5 hours changes 2 times. The subject of the invention Glass for channel emitters with a secondary emission restored layer, including SiOa, PHO, B 12 O 3, Na 2 O, characterized in that, in order to provide a resistivity of the secondary emission layer in the range of 10 ohms / cm, it additionally contains AB O 3 at the following ratio of these components, mol. %: SiOz25-75 3 PbO + B {2Oz10-55 A12Oz + Na2O2-30, 4 and the ratio A12Oz: Ma20 is from 1: 1 to 1: 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1848750A SU436033A1 (en) | 1972-11-22 | 1972-11-22 | GLASS FOR CHANNEL EMITTERS |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1848750A SU436033A1 (en) | 1972-11-22 | 1972-11-22 | GLASS FOR CHANNEL EMITTERS |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU436033A1 true SU436033A1 (en) | 1974-07-15 |
Family
ID=20532738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU1848750A SU436033A1 (en) | 1972-11-22 | 1972-11-22 | GLASS FOR CHANNEL EMITTERS |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU436033A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4567151A (en) * | 1984-08-10 | 1986-01-28 | E. I. Du Pont De Nemours And Company | Binder glass of Bi2 O3 -SiO2 -GeO2 (-PbO optional) admixed with ZnO/ZnO and Bi2 O3 |
-
1972
- 1972-11-22 SU SU1848750A patent/SU436033A1/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4567151A (en) * | 1984-08-10 | 1986-01-28 | E. I. Du Pont De Nemours And Company | Binder glass of Bi2 O3 -SiO2 -GeO2 (-PbO optional) admixed with ZnO/ZnO and Bi2 O3 |
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