SU1764335A1 - Method and device for pulse-periodic ion treatment of article - Google Patents
Method and device for pulse-periodic ion treatment of articleInfo
- Publication number
- SU1764335A1 SU1764335A1 SU4772188/21A SU4772188A SU1764335A1 SU 1764335 A1 SU1764335 A1 SU 1764335A1 SU 4772188/21 A SU4772188/21 A SU 4772188/21A SU 4772188 A SU4772188 A SU 4772188A SU 1764335 A1 SU1764335 A1 SU 1764335A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- sample
- plasma concentration
- nis
- cathode
- pulse
- Prior art date
Links
Landscapes
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
FIELD: solid-state physics. SUBSTANCE: relation between periods of discharge and accelerating pulses τand τcorrespondingly is chosen depending on kind of accelerated ions, energy of material and plasma concentration according to equation, where f is ionization degree of vapors of material of cathode, S is coefficient of sputtering of the sample by accelerating ions, nis plasma concentration at source output, nis plasma concentration at surface of collector-sample. Sizes of grid cell and distance between cathode and grid are also chosen. As a result, high-concentration impurity may be achieved in the sample excluding additional inclusions. EFFECT: improved precision; simplified system for controlling implantation source. 2 dwg
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4772188/21A SU1764335A1 (en) | 1989-12-20 | 1989-12-20 | Method and device for pulse-periodic ion treatment of article |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4772188/21A SU1764335A1 (en) | 1989-12-20 | 1989-12-20 | Method and device for pulse-periodic ion treatment of article |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1764335A1 true SU1764335A1 (en) | 1994-09-15 |
Family
ID=60532926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU4772188/21A SU1764335A1 (en) | 1989-12-20 | 1989-12-20 | Method and device for pulse-periodic ion treatment of article |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1764335A1 (en) |
-
1989
- 1989-12-20 SU SU4772188/21A patent/SU1764335A1/en active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2000008670A3 (en) | Dose monitor for plasma-monitor ion implantation doping system | |
TW346645B (en) | Method and device for introducing impurity and manufacture of semiconductor device | |
EP0747927A3 (en) | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processing | |
JPS57201527A (en) | Ion implantation method | |
EP0740327A3 (en) | Ion beam processing apparatus | |
SU1764335A1 (en) | Method and device for pulse-periodic ion treatment of article | |
JPS5249774A (en) | Ion implanting device | |
JPS57130358A (en) | Full automatic ion implantation device | |
JPS5713178A (en) | Method and device for surface treatment | |
JPS5772320A (en) | Manufacture of semconductor device | |
JPS6421073A (en) | Ion implanting device | |
JPS6476983A (en) | Sintered part of silicon carbide and production thereof | |
JPS6438959A (en) | Ion beam neutralization device | |
JPS52123174A (en) | Specimen scanning method for ion implantation | |
SUCHKOV | Interstellar medium ionization in the vicinity of nonstationary sources of ionizing radiation(Ionizatsiia mezhzvezdnoi sredy v okrestnosti nestatsionarnykh istochnikov ionizuiushchego izlucheniia) | |
JPS57171660A (en) | Method and device for vacuum deposition | |
JPS6439730A (en) | Gas ion source apparatus | |
Kurganov et al. | Analytical Calculation of the Distribution of Radiation Defects and Impurities for Limiting Doses of Ion Implantation | |
JPS5688322A (en) | Processing method for semiconductor substrate | |
JPS5635775A (en) | Ion beam etching method | |
JPS57154833A (en) | Etching method by reactive ion | |
JPS55134930A (en) | Ion implantation | |
JPS6461020A (en) | Plasma ion doping method | |
吴知非 et al. | Plasma Source Ion Implantation of Polyimide Film in Improving Conductivity | |
JPS6419665A (en) | Ion beam device |