SU1764335A1 - Method and device for pulse-periodic ion treatment of article - Google Patents

Method and device for pulse-periodic ion treatment of article

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Publication number
SU1764335A1
SU1764335A1 SU4772188/21A SU4772188A SU1764335A1 SU 1764335 A1 SU1764335 A1 SU 1764335A1 SU 4772188/21 A SU4772188/21 A SU 4772188/21A SU 4772188 A SU4772188 A SU 4772188A SU 1764335 A1 SU1764335 A1 SU 1764335A1
Authority
SU
USSR - Soviet Union
Prior art keywords
sample
plasma concentration
nis
cathode
pulse
Prior art date
Application number
SU4772188/21A
Other languages
Russian (ru)
Inventor
А.И. Рябчиков
Н.М. Арзубов
Н.А. Васильев
Р.А. Насыров
Original Assignee
Научно-исследовательский институт ядерной физики при Томском политехническом институте им.С.М.Кирова
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Научно-исследовательский институт ядерной физики при Томском политехническом институте им.С.М.Кирова filed Critical Научно-исследовательский институт ядерной физики при Томском политехническом институте им.С.М.Кирова
Priority to SU4772188/21A priority Critical patent/SU1764335A1/en
Application granted granted Critical
Publication of SU1764335A1 publication Critical patent/SU1764335A1/en

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  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

FIELD: solid-state physics. SUBSTANCE: relation between periods of discharge and accelerating pulses τand τcorrespondingly is chosen depending on kind of accelerated ions, energy of material and plasma concentration according to equation, where f is ionization degree of vapors of material of cathode, S is coefficient of sputtering of the sample by accelerating ions, nis plasma concentration at source output, nis plasma concentration at surface of collector-sample. Sizes of grid cell and distance between cathode and grid are also chosen. As a result, high-concentration impurity may be achieved in the sample excluding additional inclusions. EFFECT: improved precision; simplified system for controlling implantation source. 2 dwg
SU4772188/21A 1989-12-20 1989-12-20 Method and device for pulse-periodic ion treatment of article SU1764335A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4772188/21A SU1764335A1 (en) 1989-12-20 1989-12-20 Method and device for pulse-periodic ion treatment of article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4772188/21A SU1764335A1 (en) 1989-12-20 1989-12-20 Method and device for pulse-periodic ion treatment of article

Publications (1)

Publication Number Publication Date
SU1764335A1 true SU1764335A1 (en) 1994-09-15

Family

ID=60532926

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4772188/21A SU1764335A1 (en) 1989-12-20 1989-12-20 Method and device for pulse-periodic ion treatment of article

Country Status (1)

Country Link
SU (1) SU1764335A1 (en)

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