JPS55134930A - Ion implantation - Google Patents

Ion implantation

Info

Publication number
JPS55134930A
JPS55134930A JP4273979A JP4273979A JPS55134930A JP S55134930 A JPS55134930 A JP S55134930A JP 4273979 A JP4273979 A JP 4273979A JP 4273979 A JP4273979 A JP 4273979A JP S55134930 A JPS55134930 A JP S55134930A
Authority
JP
Japan
Prior art keywords
substrate
ions
irradiated
processed
characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4273979A
Other languages
Japanese (ja)
Inventor
Yasuo Baba
Yasuhiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4273979A priority Critical patent/JPS55134930A/en
Publication of JPS55134930A publication Critical patent/JPS55134930A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To avoid the waste of work in processes afterwards by removing defective substrates by detecting the mixed ratio of O2<+> ions imcluded in p<+> beams when implanting phosphor ions to a silicon substrate to be processed using characteristic X- rays generated from the substrate. CONSTITUTION:In a sample chamber 1, a component of an ion implantation device, a target 2 to which a silicon substrate 3 to be processed is attached is arranged and a p<+> ion beam a is irradiated to the substrate 3. In an ion source chamber 4, PH3 gas or PF5 is filled and p<+> ions are generated by plasma discharge, and passing an accelerating tube 5, a mass spectrometer 6 and a scanner 7, the ions are irradiated to the substrate 3. At this time, characteristic X-rays b resulting from O2<+> ions included in the beam a are monitored by an X-ray measuring system consisting of a proportional counter 8, a high voltage power source 9, a preamplifier 10, a linear amplifier 11, a crest analyser 12, a teletypewriter 13, etc., and if the mixed ration of O2<+> ions exceeds an allowed limit, a mark is put on the substrate and the substrate is hardled as defective after that.
JP4273979A 1979-04-09 1979-04-09 Ion implantation Pending JPS55134930A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4273979A JPS55134930A (en) 1979-04-09 1979-04-09 Ion implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4273979A JPS55134930A (en) 1979-04-09 1979-04-09 Ion implantation

Publications (1)

Publication Number Publication Date
JPS55134930A true JPS55134930A (en) 1980-10-21

Family

ID=12644386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4273979A Pending JPS55134930A (en) 1979-04-09 1979-04-09 Ion implantation

Country Status (1)

Country Link
JP (1) JPS55134930A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966045A (en) * 1982-10-08 1984-04-14 Hitachi Ltd Surface modifying device
JPH08148112A (en) * 1994-11-22 1996-06-07 Nec Corp Ion implanting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5966045A (en) * 1982-10-08 1984-04-14 Hitachi Ltd Surface modifying device
JPH08148112A (en) * 1994-11-22 1996-06-07 Nec Corp Ion implanting device

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