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Application filed by Е.А. АлейниковаfiledCriticalЕ.А. Алейникова
Priority to SU4726790/25ApriorityCriticalpatent/SU1662294A1/en
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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
FIELD: microelectronics. SUBSTANCE: upon formation of safety mask, semiconductor structure is coated with aluminium layer. EFFECT: improved quality of treated structure due to elimination of defective layer on semiconductor surface; improved plasma stability of safety mask. 1 tbl
SU4726790/25A1989-06-271989-06-27Donor center passivation method for semiconductor structures
SU1662294A1
(en)
METHOD AND EQUIPMENT PERFECTED FOR THE FORMATION OF A LAMINAR MANUFACTURE FOR THE GLAZING OF THE SURFACE OF TILES AND OTHER AND APPLICATION SYSTEMS FOR SUCH MANUFACTURE