SK500742017A3 - Vertikálny GaN tranzistor s izolačným kanálom a spôsob jeho prípravy - Google Patents

Vertikálny GaN tranzistor s izolačným kanálom a spôsob jeho prípravy

Info

Publication number
SK500742017A3
SK500742017A3 SK50074-2017A SK500742017A SK500742017A3 SK 500742017 A3 SK500742017 A3 SK 500742017A3 SK 500742017 A SK500742017 A SK 500742017A SK 500742017 A3 SK500742017 A3 SK 500742017A3
Authority
SK
Slovakia
Prior art keywords
gan layer
gan
channel insulating
layer
insulating
Prior art date
Application number
SK50074-2017A
Other languages
English (en)
Other versions
SK289027B6 (sk
Inventor
Ján Kuzmík
Original Assignee
Elektrotechnický Ústav Sav
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elektrotechnický Ústav Sav filed Critical Elektrotechnický Ústav Sav
Priority to SK50074-2017A priority Critical patent/SK289027B6/sk
Priority to PCT/SK2018/000009 priority patent/WO2019103698A1/en
Priority to EP18830014.9A priority patent/EP3714489A1/en
Publication of SK500742017A3 publication Critical patent/SK500742017A3/sk
Publication of SK289027B6 publication Critical patent/SK289027B6/sk

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Vertikálny GaN tranzistor s izolačným kanálom pozostáva najmenej z: a) vodivého GaN substrátu (1); b) driftovej n GaN vrstvy (2) vytvorenej na vodivom GaN substráte (1); c) kanálovej izolačnej GaN vrstvy (3) vytvorenej na driftovej n GaN vrstve (2), ktorej zvyškové donory sú kompenzované prímesami alebo defektmi; d) kontaktovej n+ GaN vrstvy (4) vytvorenej na kanálovej izolačnej GaN vrstve (3); pričom elektróda (6) emitora je umiestnená zhora na j kontaktovej n+ GaN vrstve (4), elektróda (7) kolektora je umiestnená odspodu na GaN substráte (1) a elektróda (8) hradla je umiestnená vertikálne pozdĺž kanálovej izolačnej GaN vrstvy (3) a je oddelená pozdĺž celej jej dĺžky od kontaktovej n+ GaN vrstvy (4), kanálovej izolačnej GaN vrstvy (3) a driftovej n GaN vrstvy (2) dielektrickou izolačnou vrstvou (5) s väčšou šírkou energetickej medzery, ako je v GaN. Zvyškové donory v kanálovej izolačnej GaN vrstve (3) sú kompenzované prímesami uhlíka alebo prímesami železa, alebo prímesami horčíka, alebo vakanciami gália. Zvyškové donory v kanálovej izolačnej GaN vrstve (3) sú kompenzované tak, že koncentrácia voľných elektrónov v kanálovej izolačnej GaN vrstve je menšia alebo sa rovná 1011 cm-3. Vynález sa týka aj spôsobu prípravy vertikálneho GaN tranzistora na vodivom GaN substráte.
SK50074-2017A 2017-11-24 2017-11-24 Vertikálny GaN tranzistor s izolačným kanálom a spôsob jeho prípravy SK289027B6 (sk)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SK50074-2017A SK289027B6 (sk) 2017-11-24 2017-11-24 Vertikálny GaN tranzistor s izolačným kanálom a spôsob jeho prípravy
PCT/SK2018/000009 WO2019103698A1 (en) 2017-11-24 2018-11-22 Vertical gan transistor with insulating channel and the method of forming the same
EP18830014.9A EP3714489A1 (en) 2017-11-24 2018-11-22 Vertical gan transistor with insulating channel and the method of forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SK50074-2017A SK289027B6 (sk) 2017-11-24 2017-11-24 Vertikálny GaN tranzistor s izolačným kanálom a spôsob jeho prípravy

Publications (2)

Publication Number Publication Date
SK500742017A3 true SK500742017A3 (sk) 2019-06-04
SK289027B6 SK289027B6 (sk) 2023-01-11

Family

ID=64949366

Family Applications (1)

Application Number Title Priority Date Filing Date
SK50074-2017A SK289027B6 (sk) 2017-11-24 2017-11-24 Vertikálny GaN tranzistor s izolačným kanálom a spôsob jeho prípravy

Country Status (3)

Country Link
EP (1) EP3714489A1 (sk)
SK (1) SK289027B6 (sk)
WO (1) WO2019103698A1 (sk)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110379846A (zh) * 2019-07-29 2019-10-25 上海科技大学 一种氮化镓增强型垂直型晶体管组件及其制作方法
DE102019216142A1 (de) * 2019-10-21 2021-04-22 Robert Bosch Gmbh Vertikaler Feldeffekttransistor und Verfahren zum Ausbilden desselben

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212472A (ja) * 2008-03-06 2009-09-17 Rohm Co Ltd 窒化物半導体素子
EP3284107B1 (en) * 2015-04-14 2023-06-14 Hrl Laboratories, Llc Iii-nitride transistor with trench gate
JP6657963B2 (ja) * 2016-01-05 2020-03-04 富士電機株式会社 Ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
SK289027B6 (sk) 2023-01-11
EP3714489A1 (en) 2020-09-30
WO2019103698A1 (en) 2019-05-31

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Legal Events

Date Code Title Description
TC4A Change of owner's name

Owner name: ELEKTROTECHNICKY USTAV SAV, V. V. I., BRATISLA, SK

Effective date: 20220128

QA9A Licence offer for patent application

Effective date: 20221021