WO2013075690A3 - Band zu band tunnel-feldeffekttransistor mit gradierter halbleiterheterostruktur im tunnelübergang - Google Patents

Band zu band tunnel-feldeffekttransistor mit gradierter halbleiterheterostruktur im tunnelübergang Download PDF

Info

Publication number
WO2013075690A3
WO2013075690A3 PCT/DE2012/001078 DE2012001078W WO2013075690A3 WO 2013075690 A3 WO2013075690 A3 WO 2013075690A3 DE 2012001078 W DE2012001078 W DE 2012001078W WO 2013075690 A3 WO2013075690 A3 WO 2013075690A3
Authority
WO
WIPO (PCT)
Prior art keywords
band
field effect
heterostructure
channel
tunnel junction
Prior art date
Application number
PCT/DE2012/001078
Other languages
English (en)
French (fr)
Other versions
WO2013075690A2 (de
Inventor
Siegfried Mantl
Qing-Tai Zhao
Original Assignee
Forschungszentrum Jülich GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Jülich GmbH filed Critical Forschungszentrum Jülich GmbH
Publication of WO2013075690A2 publication Critical patent/WO2013075690A2/de
Publication of WO2013075690A3 publication Critical patent/WO2013075690A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures

Abstract

Im Rahmen der Erfindung wurde ein Band zu Band Tunnel-Feldeffekttransistor entwickelt. Dieser besteht aus dotiertem Source, dotiertem Drain und undotiertem Kanal in einer p-i-n-Struktur. An den Kanal grenzt ein Dielektrikum an, das ein Gate zur Steuerung des Tran Band zu Band Tunnel-Feldeffekttransistor, welcher aus dotiertem Source (38-40), dotiertem Drain (12a) und undotiertem Kanal (12) in einer p-i-n-Struktur besteht. An den Kanal grenzt ein Dielektrikum (13) an, das ein Gate (14, 19) zur Steuerung des Transistors gegen den Kanal beabstandet. Zwischen dem undotierten Kanal und dem angrenzenden dotierten Bereich ist der Tunnelübergang durch eine gradierte Heterostruktur (37, 40, 39) aus mindestens einem ersten Material A (Ge) und einem zweiten Material B (Si) mit größerer Bandlücke ausgebildet ist. Entlang der Heterostruktur steigt die Konzentration von Material A zunächst an, nimmt ein Maximum an und fällt anschließend wieder ab. Es wurde erkannt, dass für eine derartige Struktur nur eine sehr dünne Schicht (40) mit maximaler Konzentration des Materials A erforderlich ist, so dass die kritische Schichtdicke für fehlerfreies einkristallines Wachstum nicht oder viel weniger überschritten werden muss als in der gradierten (Si/Ge) Heterostruktur gemäß Stand der Technik. sistors gegen den Kanal beabstandet. Zwischen dem undotierten Kanal und dem angrenzenden dotierten Bereich ist der Tunnelübergang durch eine gradierte Heterostruktur aus mindestens einem ersten Material (A) und einem zweiten Material (B) mit größerer Bandlücke ausgebildet ist. Erfindungsgemäß steigt entlang der Heterostruktur die Konzentration von Material (A) zunächst an, nimmt ein Maximum an und fällt anschließend wieder ab. Es wurde erkannt, dass für eine derartige Struktur nur eine sehr dünne Schicht des Materials (A) erforderlich ist, so dass die kritische Schichtdicke für fehlerfreies einkristallines Wachstum nicht oder viel weniger überschritten werden muss als in der gradierten Si/Ge Heterostruktur gemäß Stand der Technik.
PCT/DE2012/001078 2011-11-26 2012-11-07 Band zu band tunnel-feldeffekttransistor mit gradierter halbleiterheterostruktur im tunnelübergang WO2013075690A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011119497.9 2011-11-26
DE201110119497 DE102011119497B4 (de) 2011-11-26 2011-11-26 Band zu Band Tunnel-Feldeffekttransistor mit gradierter Halbleiterheterostruktur im Tunnelübergang und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
WO2013075690A2 WO2013075690A2 (de) 2013-05-30
WO2013075690A3 true WO2013075690A3 (de) 2013-10-10

Family

ID=48287877

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2012/001078 WO2013075690A2 (de) 2011-11-26 2012-11-07 Band zu band tunnel-feldeffekttransistor mit gradierter halbleiterheterostruktur im tunnelübergang

Country Status (2)

Country Link
DE (1) DE102011119497B4 (de)
WO (1) WO2013075690A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10103226B2 (en) * 2012-04-30 2018-10-16 International Business Machines Corporation Method of fabricating tunnel transistors with abrupt junctions
JP6253034B2 (ja) * 2013-09-04 2017-12-27 国立研究開発法人産業技術総合研究所 半導体素子及びその製造方法、並びに半導体集積回路
DE102014018382B4 (de) 2014-12-15 2018-07-26 Forschungszentrum Jülich GmbH Tunnel-Feldeffekttransistor sowie Verfahren zu dessen Herstellung
US10134859B1 (en) 2017-11-09 2018-11-20 International Business Machines Corporation Transistor with asymmetric spacers
US10236364B1 (en) 2018-06-22 2019-03-19 International Busines Machines Corporation Tunnel transistor
US10249755B1 (en) 2018-06-22 2019-04-02 International Business Machines Corporation Transistor with asymmetric source/drain overlap
US20230395735A1 (en) * 2020-10-23 2023-12-07 National Research Council Of Canada Semiconductor devices with graded interface regions
CN114335215B (zh) * 2022-03-15 2022-06-14 南昌凯迅光电股份有限公司 一种带有渐变隧穿结的砷化镓太阳电池及其制作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070178650A1 (en) * 2006-02-01 2007-08-02 International Business Machines Corporation Heterojunction tunneling field effect transistors, and methods for fabricating the same
US20100200916A1 (en) * 2009-02-12 2010-08-12 Infineon Technologies Ag Semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070178650A1 (en) * 2006-02-01 2007-08-02 International Business Machines Corporation Heterojunction tunneling field effect transistors, and methods for fabricating the same
US20100200916A1 (en) * 2009-02-12 2010-08-12 Infineon Technologies Ag Semiconductor devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
FULDE M ET AL: "Fabrication, optimization and application of complementary Multiple-Gate Tunneling FETs", NANOELECTRONICS CONFERENCE, 2008. INEC 2008. 2ND IEEE INTERNATIONAL, IEEE, PISCATAWAY, NJ, USA, 24 March 2008 (2008-03-24), pages 579 - 584, XP032100411, ISBN: 978-1-4244-1572-4, DOI: 10.1109/INEC.2008.4585554 *
RAHUL MISHRA ET AL: "Device and Circuit Performance Evaluation and Improvement of SiGe Tunnel FETs", AIP CONFERENCE PROCEEDINGS, vol. 1341, 31 May 2011 (2011-05-31), pages 185 - 187, XP055066810, ISSN: 0094-243X, DOI: 10.1063/1.3586981 *

Also Published As

Publication number Publication date
DE102011119497A1 (de) 2013-05-29
WO2013075690A2 (de) 2013-05-30
DE102011119497B4 (de) 2013-07-04

Similar Documents

Publication Publication Date Title
WO2013075690A3 (de) Band zu band tunnel-feldeffekttransistor mit gradierter halbleiterheterostruktur im tunnelübergang
WO2007149581A3 (en) Buried channel mosfet using iii-v compound semiconductors and high k gate dielectrics
WO2012087748A3 (en) Uniaxially strained quantum well device and method of making same
TW201613105A (en) Semiconductor device and manufacturing method thereof
US20110260173A1 (en) Semiconductor structure
TW201712873A (en) High electron mobility transistors with localized sub-fin isolation
SG170670A1 (en) Method of fabricating a silicon tunneling field effect transistor (tfet) with high drive current
GB2524677A (en) Deep gate-all-around semiconductor device having germanium or group III-V active layer
WO2012040681A3 (en) Non-planar quantum well device having interfacial layer and method of forming same
SG136032A1 (en) Method to control source/drain stressor profiles for stress engineering
WO2010000716A3 (de) Heterojunction-solarzelle mit absorber mit integriertem dotierprofil
RU2015151123A (ru) Устройства, основанные на избирательно эпитаксиально выращенных материалах iii-v групп
JP2012151461A5 (de)
GB2526463A (en) Leakage reduction structures for nanowire transistors
WO2010074906A3 (en) Group iii-v devices with delta-doped layer under channel region
US9263530B2 (en) Field effect transistor
WO2011090583A3 (en) Germanium-based quantum well devices
SG151168A1 (en) Multiple gate field effect transistor structure and method for fabricating same
WO2011071598A3 (en) Quantum-well-based semiconductor devices
WO2008123352A1 (ja) 半導体装置
US8802516B2 (en) Normally-off gallium nitride-based semiconductor devices
WO2006031654A3 (en) Hemt device and method of making
WO2011133339A3 (en) Monolayer dopant embedded stressor for advanced cmos
JP2016511545A5 (de)
EP1837900A3 (de) Nichtflüchtige Halbleiterspeichervorrichtung

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12823128

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 12823128

Country of ref document: EP

Kind code of ref document: A2