SG97825A1 - Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus - Google Patents

Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus

Info

Publication number
SG97825A1
SG97825A1 SG9906443A SG1999006443A SG97825A1 SG 97825 A1 SG97825 A1 SG 97825A1 SG 9906443 A SG9906443 A SG 9906443A SG 1999006443 A SG1999006443 A SG 1999006443A SG 97825 A1 SG97825 A1 SG 97825A1
Authority
SG
Singapore
Prior art keywords
manufacturing
thin film
same
semiconductor device
semiconductor substrate
Prior art date
Application number
SG9906443A
Other languages
English (en)
Inventor
Matsushita Takeshi
Kusunoki Misao
Tatsumi Takaaki
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG97825A1 publication Critical patent/SG97825A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/96—Porous semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
SG9906443A 1997-12-26 1998-12-21 Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus SG97825A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9360428A JPH11195775A (ja) 1997-12-26 1997-12-26 半導体基板および薄膜半導体素子およびそれらの製造方法ならびに陽極化成装置

Publications (1)

Publication Number Publication Date
SG97825A1 true SG97825A1 (en) 2003-08-20

Family

ID=18469364

Family Applications (2)

Application Number Title Priority Date Filing Date
SG1998005869A SG74107A1 (en) 1997-12-26 1998-12-21 Semiconductor substrate and thin film semiconductor device method of manufacturing the same and anodizing apparatus
SG9906443A SG97825A1 (en) 1997-12-26 1998-12-21 Semiconductor substrate and thin film semiconductor device, method of manufacturing the same, and anodizing apparatus

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG1998005869A SG74107A1 (en) 1997-12-26 1998-12-21 Semiconductor substrate and thin film semiconductor device method of manufacturing the same and anodizing apparatus

Country Status (7)

Country Link
US (1) US6214701B1 (id)
EP (1) EP0928032A3 (id)
JP (1) JPH11195775A (id)
KR (1) KR19990063376A (id)
CN (1) CN1221218A (id)
ID (1) ID21598A (id)
SG (2) SG74107A1 (id)

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US6013563A (en) 1997-05-12 2000-01-11 Silicon Genesis Corporation Controlled cleaning process
US20070122997A1 (en) * 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6417069B1 (en) * 1999-03-25 2002-07-09 Canon Kabushiki Kaisha Substrate processing method and manufacturing method, and anodizing apparatus
US6171965B1 (en) 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
US6287941B1 (en) 1999-04-21 2001-09-11 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
US6204151B1 (en) * 1999-04-21 2001-03-20 Silicon Genesis Corporation Smoothing method for cleaved films made using thermal treatment
US6881644B2 (en) * 1999-04-21 2005-04-19 Silicon Genesis Corporation Smoothing method for cleaved films made using a release layer
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
US6362075B1 (en) * 1999-06-30 2002-03-26 Harris Corporation Method for making a diffused back-side layer on a bonded-wafer with a thick bond oxide
JP4465745B2 (ja) * 1999-07-23 2010-05-19 ソニー株式会社 半導体積層基板，半導体結晶基板および半導体素子ならびにそれらの製造方法
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
AU6905000A (en) * 1999-08-10 2001-03-05 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
JP2001085715A (ja) * 1999-09-09 2001-03-30 Canon Inc 半導体層の分離方法および太陽電池の製造方法
US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
US6544862B1 (en) 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
JP3946427B2 (ja) * 2000-03-29 2007-07-18 株式会社東芝 エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
JP2002050749A (ja) * 2000-07-31 2002-02-15 Canon Inc 複合部材の分離方法及び装置
FR2817395B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
FR2840731B3 (fr) * 2002-06-11 2004-07-30 Soitec Silicon On Insulator Procede de fabrication d'un substrat comportant une couche utile en materiau semi-conducteur monocristallin de proprietes ameliorees
US7407869B2 (en) * 2000-11-27 2008-08-05 S.O.I.Tec Silicon On Insulator Technologies Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
KR20040070297A (ko) * 2002-01-02 2004-08-06 레베오 인코포레이티드 광전지 및 그 제조 방법
US7309620B2 (en) * 2002-01-11 2007-12-18 The Penn State Research Foundation Use of sacrificial layers in the manufacture of high performance systems on tailored substrates
US8187377B2 (en) * 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US7542197B2 (en) * 2003-11-01 2009-06-02 Silicon Quest Kabushiki-Kaisha Spatial light modulator featured with an anti-reflective structure
US7354815B2 (en) * 2003-11-18 2008-04-08 Silicon Genesis Corporation Method for fabricating semiconductor devices using strained silicon bearing material
US6967149B2 (en) * 2003-11-20 2005-11-22 Hewlett-Packard Development Company, L.P. Storage structure with cleaved layer
JP4865240B2 (ja) * 2004-03-23 2012-02-01 キヤノン株式会社 構造体の製造方法、磁気記録媒体の製造方法、成型体の製造方法
DE102005047149A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, damit hergestelltes Bauelement sowie entsprechende Herstellverfahren
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
KR100889978B1 (ko) * 2007-10-12 2009-03-25 전남대학교산학협력단 반도체 영역의 선택적 식각방법, 반도체층의 분리방법 및반도체소자를 기판으로부터 분리하는 방법
US8330126B2 (en) * 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
EP2219208B1 (en) * 2009-02-12 2012-08-29 Soitec Method for reclaiming a surface of a substrate
US8329557B2 (en) * 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US8975125B2 (en) 2013-03-14 2015-03-10 International Business Machines Corporation Formation of bulk SiGe fin with dielectric isolation by anodization
CN103426976B (zh) * 2013-08-07 2015-12-23 华北电力大学 一种利用可重复使用的衬底制备多晶硅薄膜的方法
KR101851884B1 (ko) * 2014-11-13 2018-04-24 신덴겐코교 가부시키가이샤 반도체 장치의 제조 방법 및 유리 피막 형성 장치
CN110581058B (zh) * 2018-06-08 2022-01-18 上海和辉光电股份有限公司 一种多晶硅薄膜制作方法
JP2022034881A (ja) * 2020-08-19 2022-03-04 キオクシア株式会社 半導体装置、半導体装置の製造方法、および基板の再利用方法
CN115058746B (zh) * 2022-07-07 2024-04-12 中国人民解放军陆军装甲兵学院 一种金属镀层、其制备方法及应用

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US4104090A (en) * 1977-02-24 1978-08-01 International Business Machines Corporation Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation
JPH02164023A (ja) * 1988-12-19 1990-06-25 Sanyo Electric Co Ltd Ｓｏｉ構造の形成方法とｓｏｉ構造
EP0797258A2 (en) * 1996-03-18 1997-09-24 Sony Corporation Method for making thin film semiconductor, solar cell, and light emitting diode

Also Published As

Publication number Publication date
SG74107A1 (en) 2000-07-18
JPH11195775A (ja) 1999-07-21
CN1221218A (zh) 1999-06-30
ID21598A (id) 1999-07-01
EP0928032A3 (en) 1999-09-08
EP0928032A2 (en) 1999-07-07
US6214701B1 (en) 2001-04-10
KR19990063376A (ko) 1999-07-26

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