SG92753A1 - N-sulfornyloxyimide compound and radiation-sensitive resin composition using the same - Google Patents

N-sulfornyloxyimide compound and radiation-sensitive resin composition using the same

Info

Publication number
SG92753A1
SG92753A1 SG200006373A SG200006373A SG92753A1 SG 92753 A1 SG92753 A1 SG 92753A1 SG 200006373 A SG200006373 A SG 200006373A SG 200006373 A SG200006373 A SG 200006373A SG 92753 A1 SG92753 A1 SG 92753A1
Authority
SG
Singapore
Prior art keywords
sulfornyloxyimide
radiation
compound
same
resin composition
Prior art date
Application number
SG200006373A
Other languages
English (en)
Inventor
Wang Yong
Kobayashi Eiichi
Miyaji Masaaki
Numata Jun
Shimokawa Tsutomo
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of SG92753A1 publication Critical patent/SG92753A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D207/46—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with hetero atoms directly attached to the ring nitrogen atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/56—Ring systems containing three or more rings
    • C07D209/58—[b]- or [c]-condensed
    • C07D209/72—4,7-Endo-alkylene-iso-indoles
    • C07D209/76—4,7-Endo-alkylene-iso-indoles with oxygen atoms in positions 1 and 3
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
SG200006373A 1999-11-09 2000-11-07 N-sulfornyloxyimide compound and radiation-sensitive resin composition using the same SG92753A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31765299 1999-11-09

Publications (1)

Publication Number Publication Date
SG92753A1 true SG92753A1 (en) 2002-11-19

Family

ID=18090542

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200006373A SG92753A1 (en) 1999-11-09 2000-11-07 N-sulfornyloxyimide compound and radiation-sensitive resin composition using the same

Country Status (7)

Country Link
US (1) US6517992B1 (fr)
EP (1) EP1099691B1 (fr)
KR (1) KR100673500B1 (fr)
DE (1) DE60018350T2 (fr)
IL (1) IL139513A (fr)
SG (1) SG92753A1 (fr)
TW (1) TW513408B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001055789A2 (fr) * 2000-01-25 2001-08-02 Infineon Technologies Ag Resine amplifiee chimiquement et soumise a des ondes courtes
JP4838437B2 (ja) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 感放射線性樹脂組成物
SG120873A1 (en) 2001-06-29 2006-04-26 Jsr Corp Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition
AU2002354114A1 (en) 2001-11-30 2003-06-10 Matsushita Electric Industrial Co., Ltd. Bisimide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition
US7531286B2 (en) * 2002-03-15 2009-05-12 Jsr Corporation Radiation-sensitive resin composition
JP4048824B2 (ja) * 2002-05-09 2008-02-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
EP1586596A1 (fr) * 2004-04-14 2005-10-19 DSM IP Assets B.V. Compositions de résine durcissables par voie radicalaire
JP4431453B2 (ja) * 2004-07-15 2010-03-17 富士フイルム株式会社 感光性組成物および平版印刷版原版
JP4499591B2 (ja) * 2005-03-23 2010-07-07 東京応化工業株式会社 厚膜形成用化学増幅型ポジ型ホトレジスト組成物
KR101132866B1 (ko) * 2008-11-11 2012-04-03 영남대학교 산학협력단 마카에리올 유도체 화합물을 제조하는 신규 제조방법
KR101103418B1 (ko) * 2009-07-29 2012-01-06 영남대학교 산학협력단 스테모퓨란ａ를 이용한 마카에리올 화합물의 신규 합성방법
US8932796B2 (en) * 2011-11-10 2015-01-13 International Business Machines Corporation Hybrid photoresist composition and pattern forming method using thereof
JP7131499B2 (ja) * 2018-08-09 2022-09-06 信越化学工業株式会社 レジスト材料及びパターン形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08184965A (ja) * 1994-12-27 1996-07-16 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3422111B2 (ja) * 1994-12-22 2003-06-30 ジェイエスアール株式会社 感放射線性樹脂組成物
TW487827B (en) * 1995-10-27 2002-05-21 Sumitomo Chemical Co Process for production succinimide derivative and use thereof
JP3679205B2 (ja) * 1996-09-20 2005-08-03 富士写真フイルム株式会社 ポジ型感光性組成物
US6165674A (en) * 1998-01-15 2000-12-26 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
JP3660500B2 (ja) 1998-04-10 2005-06-15 株式会社東芝 パターン形成方法
TWI232855B (en) 1998-05-19 2005-05-21 Jsr Corp Diazodisulfone compound and radiation-sensitive resin composition

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08184965A (ja) * 1994-12-27 1996-07-16 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物

Also Published As

Publication number Publication date
IL139513A (en) 2004-12-15
US6517992B1 (en) 2003-02-11
KR100673500B1 (ko) 2007-01-24
KR20010051519A (ko) 2001-06-25
IL139513A0 (en) 2001-11-25
DE60018350T2 (de) 2006-07-06
EP1099691B1 (fr) 2005-03-02
DE60018350D1 (de) 2005-04-07
TW513408B (en) 2002-12-11
EP1099691A1 (fr) 2001-05-16

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