SG89377A1 - Photo mask pattern designing method, resist pattern fabricating method and semiconductor device manufacturing method - Google Patents

Photo mask pattern designing method, resist pattern fabricating method and semiconductor device manufacturing method

Info

Publication number
SG89377A1
SG89377A1 SG200100806A SG200100806A SG89377A1 SG 89377 A1 SG89377 A1 SG 89377A1 SG 200100806 A SG200100806 A SG 200100806A SG 200100806 A SG200100806 A SG 200100806A SG 89377 A1 SG89377 A1 SG 89377A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
device manufacturing
photo mask
resist pattern
mask pattern
Prior art date
Application number
SG200100806A
Other languages
English (en)
Inventor
Kikuchi Koji
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of SG89377A1 publication Critical patent/SG89377A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200100806A 2000-02-24 2001-02-15 Photo mask pattern designing method, resist pattern fabricating method and semiconductor device manufacturing method SG89377A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000047605A JP2001235850A (ja) 2000-02-24 2000-02-24 フォトマスクパターンの設計方法、レジストパターンの形成方法および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG89377A1 true SG89377A1 (en) 2002-06-18

Family

ID=18569829

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200100806A SG89377A1 (en) 2000-02-24 2001-02-15 Photo mask pattern designing method, resist pattern fabricating method and semiconductor device manufacturing method

Country Status (7)

Country Link
US (1) US6576377B2 (fr)
EP (1) EP1130467A3 (fr)
JP (1) JP2001235850A (fr)
KR (1) KR20010085443A (fr)
CA (1) CA2336569A1 (fr)
SG (1) SG89377A1 (fr)
TW (1) TW482948B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0019283D0 (en) * 2000-08-04 2000-09-27 Novartis Ag Organic compounds
JP4053723B2 (ja) * 2000-09-27 2008-02-27 株式会社東芝 露光用マスクの製造方法
JP3633506B2 (ja) * 2001-05-24 2005-03-30 ソニー株式会社 露光方法および半導体装置の製造方法
US6721938B2 (en) * 2001-06-08 2004-04-13 Numerical Technologies, Inc. Optical proximity correction for phase shifting photolithographic masks
JP3827544B2 (ja) * 2001-08-31 2006-09-27 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003121977A (ja) * 2001-10-12 2003-04-23 Hitachi Ltd 半導体集積回路装置の製造方法およびマスク
KR20030057601A (ko) * 2001-12-29 2003-07-07 주식회사 하이닉스반도체 리소그래피용 액정마스크
EP2433871A3 (fr) * 2002-06-19 2012-07-11 Medical Instill Technologies, Inc. Machine de remplissage stérile comprenant une station de remplissage par aiguille à l'interieur d'une chambre à faisceau d'electrons
JP4528558B2 (ja) * 2004-05-28 2010-08-18 株式会社東芝 パターンのデータ作成方法、及びパターン検証手法
KR100765606B1 (ko) * 2006-10-20 2007-10-09 동부일렉트로닉스 주식회사 반도체 마스크 패턴 제작 방법 및 이를 이용한 패턴 형성방법
WO2010086850A2 (fr) 2009-01-29 2010-08-05 Digiflex Ltd. Procédé de production d'un photomasque sur une surface photopolymère
US8015512B2 (en) * 2009-04-30 2011-09-06 Macronix International Co., Ltd. System for designing mask pattern
JP2010276960A (ja) * 2009-05-29 2010-12-09 Toshiba Corp 位相シフトマスク又はそのマスクデータの作成方法、及び半導体装置の製造方法
KR102170143B1 (ko) 2013-08-19 2020-10-26 삼성전자주식회사 노출 허용도 오차 및 레지스트레이션 오차가 보정된 포토마스크 및 그의 레지스트레이션 보정방법
CN106896648B (zh) * 2013-12-30 2019-01-22 中芯国际集成电路制造(上海)有限公司 曝光目标图形的修正方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863677A (en) * 1996-07-15 1999-01-26 Mitsubishi Denki Kabushiki Kaisha Aligner and patterning method using phase shift mask

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2835313A1 (de) 1978-08-11 1980-03-13 Siemens Ag Verfahren zum uebertragen von strukturen fuer halbleiterschaltungen
US4456371A (en) 1982-06-30 1984-06-26 International Business Machines Corporation Optical projection printing threshold leveling arrangement
US5536604A (en) * 1992-07-17 1996-07-16 Kabushiki Kaisha Toshiba Exposure mask
JP3082529B2 (ja) 1993-09-13 2000-08-28 株式会社日立製作所 マスクの欠陥修正方法
JPH1012543A (ja) 1996-06-20 1998-01-16 Mitsubishi Electric Corp 位相シフトマスクを用いたパターンの形成方法
US5858580A (en) * 1997-09-17 1999-01-12 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6335128B1 (en) * 1999-09-28 2002-01-01 Nicolas Bailey Cobb Method and apparatus for determining phase shifts and trim masks for an integrated circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863677A (en) * 1996-07-15 1999-01-26 Mitsubishi Denki Kabushiki Kaisha Aligner and patterning method using phase shift mask

Also Published As

Publication number Publication date
KR20010085443A (ko) 2001-09-07
EP1130467A3 (fr) 2001-12-05
EP1130467A2 (fr) 2001-09-05
CA2336569A1 (fr) 2001-08-24
US20020006553A1 (en) 2002-01-17
US6576377B2 (en) 2003-06-10
TW482948B (en) 2002-04-11
JP2001235850A (ja) 2001-08-31

Similar Documents

Publication Publication Date Title
DE10196638T1 (de) Doppelschicht-Fotomaskenrohling und Herstellungsverfahren
SG89377A1 (en) Photo mask pattern designing method, resist pattern fabricating method and semiconductor device manufacturing method
SG132505A1 (en) Semiconductor device, and manufacturing method thereof
SG118068A1 (en) Semiconductor device and manufacturing method thereof
SG112805A1 (en) Semiconductor device and manufacturing method thereof
GB0100169D0 (en) Method for making an interconnect layer and a semiconductor device including the same
GB2376564B (en) Enhanced deposition control in fabricating devices in a semiconductor wafer
IL181060A0 (en) Method for manufacturing a semiconductor device
AU2000226927A1 (en) Semiconductor integrated circuit device and method of producing the same, and method of producing masks
FR2810885B1 (fr) Microparticule a liberation soutenue et procede de fabrication
SG100696A1 (en) Semiconductor device and method for manufacturing same
FR2858112B1 (fr) Dispositif a semi conducteur, procede de fabrication du dispositif a semiconducteur et circuit integre incluant le dispositif a semiconducteur
SG107601A1 (en) Method for reducing pattern dimensions in photoresist layer
EP1311002A4 (fr) Dispositif luminescent a semi-conducteur et procede de fabrication correspondant
DE60019913D1 (de) Halbleiterbauelement und Herstellungsverfahren
FR2805394B1 (fr) Dispositif a semiconducteur et procede de fabrication
AU2003296081A1 (en) Pattern forming method, electronic device manufacturing method, electronic device, and photomask
SG84620A1 (en) Disposable mask, and process for manufacturing the same
SG123589A1 (en) A lithographic projection mask, a device manufacturing method using a lithographic projection mask and a device manufactured thereby
EP1179749B8 (fr) Composition de photoréserve et méthode de fabrication d'un dispositif semi-conducteur
EP1564793A4 (fr) Dispositif d'exposition, procede d'exposition et procede de fabrication de dispositifs a semi-conducteur
SG97820A1 (en) Method for manufacturing a semiconductor wafer using a mask that has several regions with different scattering ability
DE60134189D1 (de) Halbleiteranordnung und Herstellungsverfahren
GB2374458B (en) Method of manufacturing a semiconductor device
AU2002355534A1 (en) Method for fabricating a thin-membrane stencil mask and method for making a semiconductor device using the same