SG88775A1 - Polishing composition and polishing method employing it - Google Patents

Polishing composition and polishing method employing it

Info

Publication number
SG88775A1
SG88775A1 SG200002445A SG200002445A SG88775A1 SG 88775 A1 SG88775 A1 SG 88775A1 SG 200002445 A SG200002445 A SG 200002445A SG 200002445 A SG200002445 A SG 200002445A SG 88775 A1 SG88775 A1 SG 88775A1
Authority
SG
Singapore
Prior art keywords
polishing
method employing
composition
polishing composition
polishing method
Prior art date
Application number
SG200002445A
Other languages
English (en)
Inventor
Ina Katsuyoshi
Kitamura Tadahiro
Suzumura Satoshi
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP34212398A priority Critical patent/JP4053165B2/ja
Application filed by Fujimi Inc filed Critical Fujimi Inc
Priority to SG200002445A priority patent/SG88775A1/en
Priority to US09/564,546 priority patent/US6428721B1/en
Priority to EP00303792A priority patent/EP1152046B1/de
Priority claimed from KR1020000029267A external-priority patent/KR100738842B1/ko
Publication of SG88775A1 publication Critical patent/SG88775A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200002445A 1998-12-01 2000-05-04 Polishing composition and polishing method employing it SG88775A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP34212398A JP4053165B2 (ja) 1998-12-01 1998-12-01 研磨用組成物およびそれを用いた研磨方法
SG200002445A SG88775A1 (en) 1998-12-01 2000-05-04 Polishing composition and polishing method employing it
US09/564,546 US6428721B1 (en) 1998-12-01 2000-05-04 Polishing composition and polishing method employing it
EP00303792A EP1152046B1 (de) 1998-12-01 2000-05-05 Schleifmittelzusammensetzung und dieses gebrauchendes Polierverfahren

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP34212398A JP4053165B2 (ja) 1998-12-01 1998-12-01 研磨用組成物およびそれを用いた研磨方法
SG200002445A SG88775A1 (en) 1998-12-01 2000-05-04 Polishing composition and polishing method employing it
US09/564,546 US6428721B1 (en) 1998-12-01 2000-05-04 Polishing composition and polishing method employing it
EP00303792A EP1152046B1 (de) 1998-12-01 2000-05-05 Schleifmittelzusammensetzung und dieses gebrauchendes Polierverfahren
KR1020000029267A KR100738842B1 (ko) 2000-05-30 2000-05-30 연마 조성물 및 그를 이용한 연마 방법

Publications (1)

Publication Number Publication Date
SG88775A1 true SG88775A1 (en) 2002-05-21

Family

ID=27513070

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200002445A SG88775A1 (en) 1998-12-01 2000-05-04 Polishing composition and polishing method employing it

Country Status (4)

Country Link
US (1) US6428721B1 (de)
EP (1) EP1152046B1 (de)
JP (1) JP4053165B2 (de)
SG (1) SG88775A1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4816836B2 (ja) * 1998-12-28 2011-11-16 日立化成工業株式会社 金属用研磨液及びそれを用いた研磨方法
JP4105838B2 (ja) * 1999-03-31 2008-06-25 株式会社トクヤマ 研磨剤及び研磨方法
EP1218464B1 (de) * 1999-08-13 2008-08-20 Cabot Microelectronics Corporation Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
US6471884B1 (en) 2000-04-04 2002-10-29 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an amino acid-containing composition
JP4743941B2 (ja) * 2000-06-30 2011-08-10 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2002075927A (ja) * 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
TWI228538B (en) * 2000-10-23 2005-03-01 Kao Corp Polishing composition
US6676718B2 (en) 2001-01-12 2004-01-13 Rodel Holdings, Inc. Polishing of semiconductor substrates
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US7160432B2 (en) 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US7128825B2 (en) 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6811680B2 (en) 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
JP4231632B2 (ja) * 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
CN100378145C (zh) 2001-06-21 2008-04-02 花王株式会社 研磨液组合物
SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
JP2003257910A (ja) * 2001-12-28 2003-09-12 Fujikoshi Mach Corp 基板における銅層の研磨方法
JP4083502B2 (ja) * 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
JP4339034B2 (ja) * 2003-07-01 2009-10-07 花王株式会社 研磨液組成物
TWI347969B (en) 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
TW200526768A (en) * 2003-09-30 2005-08-16 Fujimi Inc Polishing composition and polishing method
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
WO2005058543A1 (en) * 2003-12-12 2005-06-30 Tosoh Smd, Inc. Method of electrochemical chemical mechanical planarization process
JP2005268666A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
CN1300271C (zh) * 2004-09-24 2007-02-14 中国科学院上海微系统与信息技术研究所 硫系化合物相变材料化学机械抛光的纳米抛光液及其应用
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP2006135072A (ja) * 2004-11-05 2006-05-25 Fujimi Inc 研磨方法
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
CN100335581C (zh) * 2004-11-24 2007-09-05 中国科学院上海微系统与信息技术研究所 硫系相变材料化学机械抛光的无磨料抛光液及其应用
DE602006004624D1 (de) * 2005-02-23 2009-02-26 Jsr Corp Chemisch-mechanisches Polierverfahren
TWI434957B (zh) * 2005-06-06 2014-04-21 Advanced Tech Materials 單板製程用之整合化學機械拋光組成物及方法
TWI397577B (zh) * 2005-09-02 2013-06-01 Fujimi Inc 研磨用組成物
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
US20070068902A1 (en) * 2005-09-29 2007-03-29 Yasushi Matsunami Polishing composition and polishing method
US20070209287A1 (en) * 2006-03-13 2007-09-13 Cabot Microelectronics Corporation Composition and method to polish silicon nitride
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
SG139699A1 (en) * 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
TW200916564A (en) * 2007-01-31 2009-04-16 Advanced Tech Materials Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
JP2008235481A (ja) * 2007-03-19 2008-10-02 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物、その製造方法、及び研磨加工方法
JP2009164186A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
TWI535834B (zh) * 2009-02-16 2016-06-01 日立化成股份有限公司 銅研磨用研磨劑及使用其之研磨方法
JP5516426B2 (ja) 2009-02-16 2014-06-11 日立化成株式会社 研磨剤及び研磨方法
US8192644B2 (en) 2009-10-16 2012-06-05 Fujifilm Planar Solutions, LLC Highly dilutable polishing concentrates and slurries
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
EP2658943B1 (de) 2010-12-28 2021-03-03 Saint-Gobain Ceramics & Plastics, Inc. Polieraufschlämmung mit zirkoniumoxidpartikeln und verfahren zur verwendung der polieraufschlämmung
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN104130714B (zh) * 2014-07-01 2015-10-28 蚌埠市高华电子有限公司 一种含有磨料的适用于金属的混合抛光液及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0831136A2 (de) * 1996-09-24 1998-03-25 Cabot Corporation Polieraufschlämmung mit verschiedenen Oxidierern zum mechanisch-chemischen Polieren
WO2000000567A1 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200051A (en) * 1988-11-14 1993-04-06 I-Stat Corporation Wholly microfabricated biosensors and process for the manufacture and use thereof
EP0758641B1 (de) * 1995-08-11 2000-08-30 Daicel Chemical Industries, Ltd. Polyglycerinfettsäureester-Zusammensetzung, ihr Herstellungsverfahren, Verfahren zum Herstellen einer sehr reinen Polyglycerinfettsäureester-Zusammensetzung, eine sehr reine Polyglycerinfettsäureester-Zusammensetzung, ein Zusatzmittel für Lebensmittel, eine Harz-Zusammensetzung und eine Zusammensetzung für Kosmetika oder Waschmittel
US6207360B1 (en) * 1997-05-12 2001-03-27 Fuji Photo Film Co., Ltd. Method for image formation and apparatus for development processing
EP1102821A4 (de) 1998-06-10 2004-05-19 Rodel Inc Zusammensetzung und verfahren zum cmp-polieren von metall
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
CN1126152C (zh) 1998-08-31 2003-10-29 长兴化学工业股份有限公司 半导体制程用的化学机械研磨组合物
EP1218464B1 (de) * 1999-08-13 2008-08-20 Cabot Microelectronics Corporation Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
US6471884B1 (en) * 2000-04-04 2002-10-29 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an amino acid-containing composition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0831136A2 (de) * 1996-09-24 1998-03-25 Cabot Corporation Polieraufschlämmung mit verschiedenen Oxidierern zum mechanisch-chemischen Polieren
WO2000000567A1 (en) * 1998-06-26 2000-01-06 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate

Also Published As

Publication number Publication date
JP2000160141A (ja) 2000-06-13
JP4053165B2 (ja) 2008-02-27
EP1152046B1 (de) 2009-02-11
EP1152046A1 (de) 2001-11-07
US6428721B1 (en) 2002-08-06

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