SG83808A1 - Control system for a bidirectional switch with two transistors - Google Patents

Control system for a bidirectional switch with two transistors

Info

Publication number
SG83808A1
SG83808A1 SG200004422A SG200004422A SG83808A1 SG 83808 A1 SG83808 A1 SG 83808A1 SG 200004422 A SG200004422 A SG 200004422A SG 200004422 A SG200004422 A SG 200004422A SG 83808 A1 SG83808 A1 SG 83808A1
Authority
SG
Singapore
Prior art keywords
transistors
switch
gates
power transistors
transistor
Prior art date
Application number
SG200004422A
Other languages
English (en)
Inventor
Brulhart Marcel
Trillat Stephane
Original Assignee
Em Microelectronic Marin Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Em Microelectronic Marin Sa filed Critical Em Microelectronic Marin Sa
Publication of SG83808A1 publication Critical patent/SG83808A1/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration

Landscapes

  • Electronic Switches (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
SG200004422A 1999-08-20 2000-08-12 Control system for a bidirectional switch with two transistors SG83808A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH153099 1999-08-20

Publications (1)

Publication Number Publication Date
SG83808A1 true SG83808A1 (en) 2001-10-16

Family

ID=4212606

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200004422A SG83808A1 (en) 1999-08-20 2000-08-12 Control system for a bidirectional switch with two transistors

Country Status (8)

Country Link
US (1) US6259306B1 (zh)
EP (1) EP1079525B1 (zh)
JP (1) JP2001111403A (zh)
CN (1) CN1285657A (zh)
AT (1) ATE408272T1 (zh)
DE (1) DE69939535D1 (zh)
SG (1) SG83808A1 (zh)
TW (1) TW465184B (zh)

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US7183672B2 (en) * 2001-12-31 2007-02-27 Lewis James M MOSFET based, high voltage, electronic relays for AC power switching and inductive loads
US6683393B2 (en) 2001-12-31 2004-01-27 James M. Lewis MOSFET based, high voltage, electronic relays for AC power switching and inductive loads
US7230354B2 (en) * 2001-12-31 2007-06-12 Lewis James M Driver system for MOSFET based, high voltage, electronic relays for AC power switching and inductive loads
US7439636B2 (en) * 2001-12-31 2008-10-21 Lewis James M Driver system for MOSFET based, high voltage electronic relays for AC power switching and inductive loads
EP1559194A1 (en) 2002-10-29 2005-08-03 Koninklijke Philips Electronics N.V. Bi-directional double nmos switch
US7372685B2 (en) * 2003-05-20 2008-05-13 On Semiconductor Multi-fault protected high side switch with current sense
EP1498998A1 (en) * 2003-07-16 2005-01-19 Dialog Semiconductor GmbH Protection switch with reverse voltage protection
US8253394B2 (en) * 2004-02-17 2012-08-28 Hewlett-Packard Development Company, L.P. Snubber circuit
US20050162139A1 (en) * 2004-01-23 2005-07-28 Mark Hirst Alternating current switching circuit
US20050162870A1 (en) * 2004-01-23 2005-07-28 Hirst B. M. Power converter
HUP0400419A2 (hu) * 2004-02-16 2005-12-28 András Fazakas Kis veszteségű, elektronikusan vezérelhető váltakozóáramú félvezetős kapcsolóeszköz
JP2006033723A (ja) * 2004-07-21 2006-02-02 Sharp Corp 電力制御用光結合素子およびこの電力制御用光結合素子を用いた電子機器
JP2006147700A (ja) * 2004-11-17 2006-06-08 Sanyo Electric Co Ltd 半導体装置
JP2006311507A (ja) * 2005-03-28 2006-11-09 Matsushita Electric Ind Co Ltd 電源スイッチ回路
US7457092B2 (en) * 2005-12-07 2008-11-25 Alpha & Omega Semiconductor, Lld. Current limited bilateral MOSFET switch with reduced switch resistance and lower manufacturing cost
RU2012147797A (ru) * 2010-04-12 2014-05-20 Сапиенс Стиринг Брейн Стимьюлейшн Б.В. Схема управления и способ управления системой двунаправленного выключателя, двунаправленный выключатель, коммутационная матрица и медицинский стимулятор
CN102005734B (zh) * 2010-10-20 2013-09-18 无锡中星微电子有限公司 电池保护集成电路及系统
FR2967837A1 (fr) * 2010-11-23 2012-05-25 Peugeot Citroen Automobiles Sa Systeme d'alimentation en energie electrique d'organes consommateurs equipant un vehicule automobile
US8941264B2 (en) * 2011-06-20 2015-01-27 Bae Systems Information And Electronic Systems Integration Inc. Apparatus for bi-directional power switching in low voltage vehicle power distribution systems
WO2013066865A1 (en) 2011-10-31 2013-05-10 Cobasys, Llc Intelligent charging and discharging system for parallel configuration of series cells with semiconductor switching
WO2013066867A2 (en) 2011-10-31 2013-05-10 Cobasys, Llc Parallel configuration of series cells with semiconductor switching
JP5529178B2 (ja) * 2012-01-19 2014-06-25 旭化成エレクトロニクス株式会社 電源接続装置
JP5710516B2 (ja) * 2012-02-08 2015-04-30 オムロンオートモーティブエレクトロニクス株式会社 電源装置
US8933533B2 (en) * 2012-07-05 2015-01-13 Infineon Technologies Austria Ag Solid-state bidirectional switch having a first and a second power-FET
US9498601B2 (en) 2013-03-14 2016-11-22 Hansen Medical, Inc. Catheter tension sensing
KR102141822B1 (ko) * 2013-06-26 2020-08-06 삼성전자주식회사 충전시간을 단축하기 위한 제어회로 및 그 구동방법
US9680300B2 (en) * 2013-12-13 2017-06-13 Keithley Instruments, Llc Hot switch protection circuit
JP6309855B2 (ja) * 2014-07-31 2018-04-11 株式会社東芝 レギュレータ回路
KR101599733B1 (ko) * 2014-11-12 2016-03-04 한국기초과학지원연구원 플라즈마를 이용한 액체 처리 장치
US9627962B2 (en) * 2015-03-09 2017-04-18 Texas Instruments Incorporated Fast blocking switch
JP6601026B2 (ja) * 2015-07-09 2019-11-06 株式会社Ihi 半導体スイッチ回路及び半導体リレー回路
CN105356421A (zh) * 2015-11-27 2016-02-24 上海中兴派能能源科技有限公司 一种锂电池组充放电保护电路
CN105429222A (zh) * 2015-12-15 2016-03-23 成都默一科技有限公司 一种采用单端口的充电及放电装置
CN106059549A (zh) * 2016-05-31 2016-10-26 天津市三源电力设备制造有限公司 一种基于pmos的新型双向模拟开关电路
JP6745478B2 (ja) * 2016-06-30 2020-08-26 パナソニックIpマネジメント株式会社 保護回路及び配線器具
CN106602667A (zh) * 2017-01-20 2017-04-26 浙江大学昆山创新中心 一种移动机器人自动充电保护系统及保护方法
CN106992569A (zh) * 2017-05-05 2017-07-28 江苏金帆电源科技有限公司 一种充放电控制电路
DE102017012069A1 (de) * 2017-12-29 2019-07-04 Thomas Kliem Elektronische Schaltungsanordnung
EP3509131A1 (en) * 2018-01-08 2019-07-10 Samsung SDI Co., Ltd. Switchable battery module
US10432184B1 (en) * 2018-08-09 2019-10-01 Texas Instruments Incorporated Channel switchover power multiplexer circuits, and methods of operating the same
CN109617184A (zh) * 2018-12-29 2019-04-12 维沃移动通信有限公司 一种升压电路和终端
JP7265468B2 (ja) * 2019-12-17 2023-04-26 株式会社東芝 半導体集積回路、及び半導体集積回路の制御方法
WO2022140979A1 (zh) * 2020-12-28 2022-07-07 深圳市速腾聚创科技有限公司 激光接收电路和激光雷达

Citations (4)

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EP0362080A1 (fr) * 1988-08-31 1990-04-04 STMicroelectronics S.A. Commutateur bidirectionnel monolithique à transistors MOS de puissance
US5574633A (en) * 1994-02-23 1996-11-12 At&T Global Information Solubions Company Multi-phase charge sharing method and apparatus
US5764032A (en) * 1997-03-06 1998-06-09 Maxim Integrated Products, Inc. Multiple battery switchover circuits
US5808502A (en) * 1995-06-05 1998-09-15 Hewlett-Packard Co. Parallel micro-relay bus switch for computer network communication with reduced crosstalk and low on-resistance using charge pumps

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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
EP0362080A1 (fr) * 1988-08-31 1990-04-04 STMicroelectronics S.A. Commutateur bidirectionnel monolithique à transistors MOS de puissance
US5574633A (en) * 1994-02-23 1996-11-12 At&T Global Information Solubions Company Multi-phase charge sharing method and apparatus
US5808502A (en) * 1995-06-05 1998-09-15 Hewlett-Packard Co. Parallel micro-relay bus switch for computer network communication with reduced crosstalk and low on-resistance using charge pumps
US5764032A (en) * 1997-03-06 1998-06-09 Maxim Integrated Products, Inc. Multiple battery switchover circuits

Also Published As

Publication number Publication date
EP1079525B1 (fr) 2008-09-10
EP1079525A1 (fr) 2001-02-28
DE69939535D1 (de) 2008-10-23
TW465184B (en) 2001-11-21
ATE408272T1 (de) 2008-09-15
US6259306B1 (en) 2001-07-10
CN1285657A (zh) 2001-02-28
JP2001111403A (ja) 2001-04-20

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