SG83790A1 - Selective dry etch of dielectric film - Google Patents

Selective dry etch of dielectric film

Info

Publication number
SG83790A1
SG83790A1 SG200002138A SG200002138A SG83790A1 SG 83790 A1 SG83790 A1 SG 83790A1 SG 200002138 A SG200002138 A SG 200002138A SG 200002138 A SG200002138 A SG 200002138A SG 83790 A1 SG83790 A1 SG 83790A1
Authority
SG
Singapore
Prior art keywords
dielectric film
dry etch
selective dry
selective
etch
Prior art date
Application number
SG200002138A
Other languages
English (en)
Inventor
A Bennett Delores
P Norum James
Yan Hongwen
Yu Chienfan
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG83790A1 publication Critical patent/SG83790A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
SG200002138A 1999-05-05 2000-04-13 Selective dry etch of dielectric film SG83790A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/305,432 US6294102B1 (en) 1999-05-05 1999-05-05 Selective dry etch of a dielectric film

Publications (1)

Publication Number Publication Date
SG83790A1 true SG83790A1 (en) 2001-10-16

Family

ID=23180756

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200002138A SG83790A1 (en) 1999-05-05 2000-04-13 Selective dry etch of dielectric film

Country Status (6)

Country Link
US (1) US6294102B1 (ko)
JP (1) JP3649650B2 (ko)
KR (1) KR100358459B1 (ko)
DE (1) DE10016938C2 (ko)
SG (1) SG83790A1 (ko)
TW (1) TW554439B (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19928297A1 (de) * 1999-06-22 2000-12-28 Bosch Gmbh Robert Verfahren zur Herstellung eines Sensors mit einer Membran
JP3586605B2 (ja) * 1999-12-21 2004-11-10 Ｎｅｃエレクトロニクス株式会社 シリコン窒化膜のエッチング方法及び半導体装置の製造方法
KR100382720B1 (ko) * 2000-08-30 2003-05-09 삼성전자주식회사 반도체 식각 장치 및 이를 이용한 반도체 소자의 식각 방법
JP2002319551A (ja) * 2001-04-23 2002-10-31 Nec Corp 半導体装置およびその製造方法
KR100398574B1 (ko) * 2001-06-28 2003-09-19 주식회사 하이닉스반도체 반도체 소자의 게이트 스페이서 형성방법
DE10245671B4 (de) * 2002-09-30 2004-08-26 Infineon Technologies Ag Herstellungsverfahren für eine Halbleiterstruktur durch selektives isotropes Ätzen einer Siliziumdioxidschicht auf einer Siliziumnitridschicht
US7056830B2 (en) * 2003-09-03 2006-06-06 Applied Materials, Inc. Method for plasma etching a dielectric layer
KR101042951B1 (ko) * 2009-09-21 2011-06-20 현대로템 주식회사 철도차량의 후미차량 전조등 제어회로
US20130143392A1 (en) * 2011-12-06 2013-06-06 Epowersoft, Inc. In-situ sin growth to enable schottky contact for gan devices
US9257293B2 (en) * 2013-03-14 2016-02-09 Applied Materials, Inc. Methods of forming silicon nitride spacers
US10629435B2 (en) * 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8204437A (nl) * 1982-11-16 1984-06-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met behulp van plasma-etsen.
US4572765A (en) * 1983-05-02 1986-02-25 Fairchild Camera & Instrument Corporation Method of fabricating integrated circuit structures using replica patterning
US5356515A (en) * 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
US5423945A (en) 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
CH685692A5 (de) * 1992-01-29 1995-09-15 Sky Disc Holding Sa C O Norasi Fluggerät.
US5880037A (en) * 1992-09-08 1999-03-09 Applied Materials, Inc. Oxide etch process using a mixture of a fluorine-substituted hydrocarbon and acetylene that provides high selectivity to nitride and is suitable for use on surfaces of uneven topography
DE4232475C2 (de) * 1992-09-28 1998-07-02 Siemens Ag Verfahren zum plasmachemischen Trockenätzen von Si¶3¶N¶4¶-Schichten hochselektiv zu SiO¶2¶-Schichten
JPH09296271A (ja) * 1996-05-02 1997-11-18 Samuko Internatl Kenkyusho:Kk プラズマｃｖｄ反応室清掃方法及びプラズマエッチング方法
DE19706682C2 (de) * 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
US5801094A (en) * 1997-02-28 1998-09-01 United Microelectronics Corporation Dual damascene process
TW351837B (en) * 1997-10-29 1999-02-01 United Semiconductor Corp Method for improving etching process

Also Published As

Publication number Publication date
DE10016938C2 (de) 2003-04-24
KR100358459B1 (ko) 2002-10-25
KR20010020758A (ko) 2001-03-15
JP2001023957A (ja) 2001-01-26
US6294102B1 (en) 2001-09-25
JP3649650B2 (ja) 2005-05-18
DE10016938A1 (de) 2000-11-16
TW554439B (en) 2003-09-21

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