TW554439B - Selective dry etch of a dielectric film - Google Patents

Selective dry etch of a dielectric film Download PDF

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TW554439B
TW554439B TW089103450A TW89103450A TW554439B TW 554439 B TW554439 B TW 554439B TW 089103450 A TW089103450 A TW 089103450A TW 89103450 A TW89103450 A TW 89103450A TW 554439 B TW554439 B TW 554439B
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nitride layer
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Delores A Bennett
James P Norum
Hongwen Yan
Chienfan Yu
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides

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Description

554439
五、發明說明（1) 技術之領域 本發明大致關於一種蝕刻介電膜之方法，更特別地，關 於一種以高選擇性蝕刻氮化物層上之氧化物層之方法。f 發明之背景 / ° 半導體製造之重大挑戰為將已置於如氮化矽之氮化物声 上之氧化物層或部份之氧化物層蝕刻。此挑戰為以高選^ 性對氧化物層實行蝕刻。因為氧化物與氮化物材料2^^ 钱刻電漿中以大約相同之速率蝕刻，因此尚未解決提供氢 種具有充份選擇性之方法之挑戰。 一種解決此挑戰之嚐試為使用經氟取代之烴作為蝕刻 劑。氟反應存在之碳而在基材上形成碳—氟聚合物之鈍化 塗層。此聚合物因在蝕刻氧化物層時形成之氧原子而解 離。因此，在連續地蝕刻氧化物層時，氮化物層由於鈍矽 塗層之存在而以遠較為低之速率蝕刻。不幸地，鈍化層亦 父存在於電水中之自由氟原子侵钱，結果，持續以比需為 大之速率姓刻氮化物層。
Marks等人在美國專利5, 423, 945揭示另一種選擇性蝕刻
，氣化物層上之氧化物層之方法。揭示之方法使用高聚合 氣體，如或CHA，及氟去除劑，如⑶，以在氮化物層 表面上形成保護性富碳聚合物層。雖然得到增強之氧化物 層對IL化物層之姓刻選擇性，使用此方法亦發生許多缺 點。 首先，Marks等人揭示之方法需要聚合物在氮化物層表 面上累積以減緩在氮化物層上之蝕刻速率。·此方法對於
第4頁 554439 五、發明說明（2) 2 〇 〇埃或更低之非常薄氮化物層並不理想，因為氮化物層 在得到選擇性效果之前因蝕刻而消耗。其次，使用聚合氣 體為不希望的，因為在後續蝕刻氮化物層時（一個習知地 在半導體處理中進行之步驟），其高選擇性同樣地保存缺 陷。
此外’高聚合氣體趨於在被钱刻之基材上及處理槽中留 下大里殘〉查。此殘潰造成基材與處理槽一般均需要後清潔 處理。此外，許多聚合氣體（包括CH2F2)為可燃性，毒性， 或可燃性且毒性。類似地，作為清除氣體之C0為毒性且趨 於在#刻槽裝置之氣體線路中自不銹鋼組件瀝濾鎳與鐵。 使用4知方法钮刻在氮化物層上之氧化物層之缺點顯示 存在一種方法之需求，其對氧化物層具有高選擇性，使用 非聚合氣體，而且適合用於配置在薄氮化物層上之氧化物 層。為了克服習知方法之缺點，提供一種新穎方法。本發 明之目的為提供一種以高選擇性蝕刻在氮化物層上之氧化 物層之方去。相關之目的為提供一種適合配 層上之氧化物層之方法。本發明之另一個目的為提供4 使用非聚合氣體之方法。 發明之概要
日為了完成這些及其他之目的，及就其目的而言，本發明 提供一種蝕刻在基材上部中之氮化物層上之氧化物層之方 法2此基材使用衍生自含碳與含氟氣體及含氮氣體之電漿 對亂化物層上之氧化物層以高選擇性蝕刻。經氧化物層至 氮化物層之蝕刻基材製造sixNy物種，其沈積在氮化物^上
554439 五、發明說明（3) 以實質上平衡氮化物層之蝕刻。 較佳為，含碳與含氟氣體為CF4，C2F6，或這些化合物之 組合。含氮氣體較佳為％，NH3，或這些化合物之組合。配 置在氧化物層下之氮化物層較佳為藉化學蒸氣沈積（CVD) 形成之氮化物層，如低壓化學蒸氣沈積（LPCVD)或電漿增 強化學蒸氣沈積（PECVD)。更佳為，氮化物層藉電漿增強 化學蒸氣沈積形成。 應了解，以上之一般說明及以下之詳細說明均為本發明 之例示而非限制。
圖式之簡要說明 本發明由以下之詳細說明在結合附圖時最佳地了解。在 此強調，依照一般實務，圖式之各個特點未成比例。相對 地’各個特點之尺寸為了明確而放大或縮小。唯一之圖式 圖1，以略示之表現顯示習知蝕刻裝置之橫切面圖。 發明之詳細說明
本發明緊接著參考圖1而描述。此圖式意圖為描述性而 非限制。包括其以利於解釋用以實行本發明方法之裝置。 士圖1為習知蝕刻槽1 〇之橫切面圖。例如，由鋁製造之外 殼12界定蝕刻槽14。被處理之基材22，如矽晶圓，支撐於 :極撐體16上。撐體16 —般為陰極。外殼I〗之内壁一般為 陽，。陰，16連接RF電源來源18。連接至處理氣體（未示） 之氧體歧管2 0為相對且緊密地間隔撐體丨6。在處理氣體離 開氣體歧管20時，以氣體歧管2〇之孔口23將其導引至基材 1 2。在將RF電源施加於基材撐體丨6及將處理氣體進料至歧
554439 五、發明說明（4) 管20時，在歧管20與基材22之間之空間形成電漿。連接真 空泵（未示）之廢氣線路24維持槽中之壓力且抽取消耗之氣 體及反應產物。 通常，在如CF4，C2F6，C3F8，CH2F4等含碳與氟之氟碳蝕 刻氣體暴露於電漿時，在電漿中產生各種碎片。此種碎片 包括自由氟原子，CF與CF2自由基等。氟可#刻在基材上 之氧化矽層。然而，在蝕刻過程時，亦形成沈積在基材上 之碳與氟之聚合物 侵蝕，因此來自氧 離而不干擾氧化物 到達不含氧層時， 解離。此時，持續 氮化物層。 ’而形成純化層。 化物層之氧原子將 層之钱刻。然而， 即，氮化物層，並 蝕刻氧化矽層且以 此種聚合物被氧原子 聚合物形成時將其解 在無氧存在時，如在 無氧將鈍化聚合物層 較慢之速刻鈍^ 不幸地，鈍化聚合物亦被氟解離且電漿 離子撞擊及侵蝕聚合物層。此侵蝕造成^人持續形成之氟 氮化物層被電漿蝕刻。 "5物解離，此時 已嘴試使用由CHF3與He〇2組成之蝕刻氣 物層表面上製造鈍化聚合物。此聚合物累’其亦在氮化 在蝕刻中止氮化物層上生成蝕刻速率之^積並不均勻，布 邊緣不均勻性。各蝕刻速率之不一致在 2之高中央-對 化物層時呈現重大之問題。此外，在藉電、二處理中蝕刻虞 沈積形成氮化物膜時，蝕刻速率之不岣$水增強化學蒸痛 氮化物層而增加。 。性由於易於蝕亥 已發現以衍生自含碳與含氟氣體及含 虱體之電漿蝕亥 554439 五、發明說明（5) 可降低上述之缺陷。牲 氟氣體及含氮氣體之見使用衍生自含碳與含 層之基材可製造氮化物層上之氧化物 之蚀刻時，此SlxNy物種，其中χ = 2，3， 。化，廣 或4,由姓刻副產物SiFx及氮自由基與離子(如n，n2，：’ N)之反應產生。（在單一過程時可能形成許多種不2之、 SixNy物種。例如，可形成叫心物種與物種。 種’較，圭為Si3M4，為用於藉化學蒸氣沈積(特別是心二 強化學蒸氣沈積）开> 成之氮化物層之電漿先質。作 質，SixNy物種對氮化物層具有親和力，因而，，黏附f至 之被#刻之氮化物層。 S ix Ny在钱刻電衆中之存在發生氮化物蝕刻之逆過程以 氮化物沈積取代部份之被蝕刻氮化物層。氮化物沈積過程 實質上平衡氮化物層餘刻過程，產生氧化物層氮化物層之 高選擇性。結果為減小先行方法中經歷之不均勻性問題。 至於用於此專利文件中之”氧化物層”指習知地用於半導 體製造之氧化物層，如二氧化矽，矽烷氧化物，或正石夕酸 四乙酯（TEOS)氧化物。類似地，"氮化物層，，指習知地用於 半導體製造之氮化物層，如氮化矽。本發明亦適合具有小 於約2 0 0埃之厚度之薄氮化物層。 在本發明中，使用之氟碳蝕刻氣體較佳為CF4，C2F6，或 這些化合物之組合。含氮氣體較佳為NH3，N2，或這些化合 物之組合。本發明之方法可在習知地使用之處理槽中進 行，如二極體槽或高密度電漿槽。蝕刻槽以RF能量充電，

Claims (1)

  1. 554439 曰 修正 本 六;^%專利範圍 1 . ^^種以對氧化物層之高蝕刻選擇性蝕刻置於基材上 部中之氮化物層上之氧化物層之方法，此方法包含： 提供衍生自含碳與氟之氣體及含氮氣體之電漿；及 在接觸基材之電漿中蝕刻基材， 其中該蝕刻係製造S i F4，該電漿係含衍生自S i F4與氮物 種所反應之SixNy物種，且該SixNy物種係沈積在氮化物層上 以實質上平衡氮化物層之蝕刻。 其中基材為s夕。 其中氧化物層係選 及矽烷氧化物所組 其中氮化物層為氮 其中含碳與氟之氣 2. 根據申請專利範圍第1項之方法 3 . 根據申請專利範圍第1項之方法 自由二氧化矽，正矽酸四乙酯氧化物 成之群組。 4. 根據申請專利範圍第1項之方法 化石夕。 5. 根據申請專利範圍第1項之方法 體係選自由CF4，C2F6，及該等化合物組合所組成之群組。 6. 根據申請專利範圍第1項之方法，其中含氮氣體為選 自由N2，N H3，及該等化合物之組合所組成之群組。 7. 根據申請專利範圍第1項之方法，其中氮化物層具有 小於2 0 0埃之厚度。 8. 根據申請專利範圍第1項之方法，其中： 蝕刻在具有電極之蝕刻槽中發生；及 此方法進一步包含經電極將RF能量電容地偶合至電漿 中 0 9. 根據申請專利範圍第1項之方法，其中：
    _1 61657-911025.ptc 第11頁 554439 _案號 89103450_年月日__ 六、申請專利範圍 蝕刻在具有槽壁之蝕刻槽中發生；及 此方法進一步包含經壁將R F能量感應地偶合至電漿中。 10. 根據申請專利範圍第1項之方法，其中氮化物層藉 化學蒸氣沈積在基材上形成。 11. 一種對置於氮化物上之氧化物選擇性蝕刻之方法， 此方法包含步驟： 將具有置於氮化物層上之氧化物層之基材暴露於氟碳-氮電漿； 蝕刻氧化物層及氮化物層以製造SixNy物種；及 在氮化物層上沈積SixNy物種以實質上平衡氮化物層之蝕 刻。 12. 根據申請專利範圍第1 1項之方法，其中基材為矽。 13. 根據申請專利範圍第1 1項之方法，其中氧化物層係 選自由二氧化矽，正矽酸四乙酯氧化物，及矽烷氧化物所 組成之群組。 14. 根據申請專利範圍第1 1項之方法，其中氮化物層為 氮化矽。 15. 根據申請專利範圍第1 1項之方法，其中氮化物層具 有小於2 0 0埃之厚度。 16. 根據申請專利範圍第1 1項之方法，其中 蝕刻在具有電極之蝕刻槽中發生；及 此方法進一步包含經電極將RF能量電容地偶合至電漿 中 0 17. 根據申請專利範圍第1 1項之方法，其中
    61657-911025.ptc 第12頁 554439
    61657-911025.ptc
    第13頁
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