GB9811203D0 - 3-step etching for contact window - Google Patents

3-step etching for contact window

Info

Publication number
GB9811203D0
GB9811203D0 GBGB9811203.0A GB9811203A GB9811203D0 GB 9811203 D0 GB9811203 D0 GB 9811203D0 GB 9811203 A GB9811203 A GB 9811203A GB 9811203 D0 GB9811203 D0 GB 9811203D0
Authority
GB
United Kingdom
Prior art keywords
contact window
step etching
etching
window
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9811203.0A
Other versions
GB2337850A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hualon Micro Electronic Corp
Original Assignee
Hualon Micro Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to CA002238128A priority Critical patent/CA2238128A1/en
Priority to DE19823223A priority patent/DE19823223A1/en
Application filed by Hualon Micro Electronic Corp filed Critical Hualon Micro Electronic Corp
Priority to GB9811203A priority patent/GB2337850A/en
Priority to CN98102315.0A priority patent/CN1237780A/en
Publication of GB9811203D0 publication Critical patent/GB9811203D0/en
Publication of GB2337850A publication Critical patent/GB2337850A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
GB9811203A 1998-05-20 1998-05-27 Etching contact windows Withdrawn GB2337850A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA002238128A CA2238128A1 (en) 1998-05-20 1998-05-20 3-step etching for contact window
DE19823223A DE19823223A1 (en) 1998-05-20 1998-05-25 Three-step etching of contact via
GB9811203A GB2337850A (en) 1998-05-20 1998-05-27 Etching contact windows
CN98102315.0A CN1237780A (en) 1998-05-20 1998-05-29 Contact window and its etching method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CA002238128A CA2238128A1 (en) 1998-05-20 1998-05-20 3-step etching for contact window
DE19823223A DE19823223A1 (en) 1998-05-20 1998-05-25 Three-step etching of contact via
GB9811203A GB2337850A (en) 1998-05-20 1998-05-27 Etching contact windows
CN98102315.0A CN1237780A (en) 1998-05-20 1998-05-29 Contact window and its etching method

Publications (2)

Publication Number Publication Date
GB9811203D0 true GB9811203D0 (en) 1998-07-22
GB2337850A GB2337850A (en) 1999-12-01

Family

ID=31499382

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9811203A Withdrawn GB2337850A (en) 1998-05-20 1998-05-27 Etching contact windows

Country Status (4)

Country Link
CN (1) CN1237780A (en)
CA (1) CA2238128A1 (en)
DE (1) DE19823223A1 (en)
GB (1) GB2337850A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7044212B1 (en) 2000-08-25 2006-05-16 Net Nanofiltertechnik Gmbh Refrigeration device and a method for producing the same
DE10041829B4 (en) * 2000-08-25 2004-11-04 N F T Nanofiltertechnik Gmbh cooler
DE10042235A1 (en) * 2000-08-28 2002-04-18 Infineon Technologies Ag Process for producing an electrically conductive connection
CN100383667C (en) * 2002-02-08 2008-04-23 旺宏电子股份有限公司 Semiconductor element pattern transferring method
US7449407B2 (en) 2002-11-15 2008-11-11 United Microelectronics Corporation Air gap for dual damascene applications
DE102006026549A1 (en) 2006-06-08 2007-12-13 Audi Ag Process for producing friction discs of ceramic materials with improved friction layer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354386A (en) * 1989-03-24 1994-10-11 National Semiconductor Corporation Method for plasma etching tapered and stepped vias
US5180689A (en) * 1991-09-10 1993-01-19 Taiwan Semiconductor Manufacturing Company Tapered opening sidewall with multi-step etching process
EP0541160A1 (en) * 1991-11-07 1993-05-12 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device whereby contact windows are provided in an insulating layer comprising silicon nitride in two etching steps
JP2988122B2 (en) * 1992-05-14 1999-12-06 日本電気株式会社 Dry etching apparatus and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
GB2337850A (en) 1999-12-01
CN1237780A (en) 1999-12-08
DE19823223A1 (en) 1999-12-02
CA2238128A1 (en) 1999-11-20

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)