SG80593A1 - Semiconductor memory device and memory module using the same - Google Patents
Semiconductor memory device and memory module using the sameInfo
- Publication number
- SG80593A1 SG80593A1 SG9801172A SG1998001172A SG80593A1 SG 80593 A1 SG80593 A1 SG 80593A1 SG 9801172 A SG9801172 A SG 9801172A SG 1998001172 A SG1998001172 A SG 1998001172A SG 80593 A1 SG80593 A1 SG 80593A1
- Authority
- SG
- Singapore
- Prior art keywords
- same
- memory device
- semiconductor memory
- memory module
- module
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/74—Masking faults in memories by using spares or by reconfiguring using duplex memories, i.e. using dual copies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
- G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03140395A JP3631277B2 (ja) | 1995-01-27 | 1995-01-27 | メモリモジュール |
Publications (1)
Publication Number | Publication Date |
---|---|
SG80593A1 true SG80593A1 (en) | 2001-05-22 |
Family
ID=12330301
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG9801172A SG80593A1 (en) | 1995-01-27 | 1996-01-26 | Semiconductor memory device and memory module using the same |
SG1996000488A SG34380A1 (en) | 1995-01-27 | 1996-01-26 | Semiconductor memory device and memory module using the same |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1996000488A SG34380A1 (en) | 1995-01-27 | 1996-01-26 | Semiconductor memory device and memory module using the same |
Country Status (6)
Country | Link |
---|---|
US (2) | US5691952A (ja) |
JP (1) | JP3631277B2 (ja) |
KR (1) | KR100398166B1 (ja) |
MY (1) | MY119136A (ja) |
SG (2) | SG80593A1 (ja) |
TW (1) | TW312789B (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010006400A (ko) * | 1997-04-16 | 2001-01-26 | 가나이 쓰토무 | 반도체 집적 회로 및 메모리의 검사 방법 |
JPH10326496A (ja) * | 1997-05-26 | 1998-12-08 | Hitachi Ltd | 半導体記憶装置 |
JPH11297096A (ja) * | 1998-04-14 | 1999-10-29 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100282525B1 (ko) * | 1998-11-11 | 2001-02-15 | 김영환 | 메모리 테스트 회로 |
US6452845B1 (en) * | 1999-01-07 | 2002-09-17 | Micron Technology, Inc. | Apparatus for testing redundant elements in a packaged semiconductor memory device |
US6141267A (en) * | 1999-02-03 | 2000-10-31 | International Business Machines Corporation | Defect management engine for semiconductor memories and memory systems |
JP2001084797A (ja) * | 1999-09-14 | 2001-03-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6249464B1 (en) | 1999-12-15 | 2001-06-19 | Cypress Semiconductor Corp. | Block redundancy in ultra low power memory circuits |
JP2001273788A (ja) * | 2000-03-29 | 2001-10-05 | Hitachi Ltd | 半導体記憶装置 |
JP2001351396A (ja) * | 2000-06-07 | 2001-12-21 | Nec Corp | 半導体メモリ及び半導体メモリ搭載ボード |
US6243306B1 (en) | 2000-07-19 | 2001-06-05 | International Business Machines Corporation | Defect management engine for generating a unified address to access memory cells in a primary and a redundancy memory array |
JP2003022674A (ja) * | 2001-07-10 | 2003-01-24 | Fujitsu Ltd | 可変設定されるデータ入出力端子とその制御信号端子を有する半導体メモリデバイス |
JP2003331577A (ja) * | 2002-05-09 | 2003-11-21 | Fujitsu Ltd | 半導体記憶装置 |
JP2004234770A (ja) * | 2003-01-31 | 2004-08-19 | Renesas Technology Corp | 半導体記憶装置とテスト方法 |
US7394708B1 (en) * | 2005-03-18 | 2008-07-01 | Xilinx, Inc. | Adjustable global tap voltage to improve memory cell yield |
US7609561B2 (en) * | 2006-01-18 | 2009-10-27 | Apple Inc. | Disabling faulty flash memory dies |
JP2008111921A (ja) * | 2006-10-30 | 2008-05-15 | Renesas Technology Corp | 表示制御用半導体集積回路 |
CN101689858B (zh) * | 2007-06-25 | 2012-08-22 | 太阳诱电株式会社 | 半导体器件 |
US7971007B2 (en) * | 2008-07-08 | 2011-06-28 | Silicon Motion, Inc. | Downgrade memory apparatus, and method for accessing a downgrade memory |
JP2010079445A (ja) * | 2008-09-24 | 2010-04-08 | Toshiba Corp | Ssd装置 |
JP5538958B2 (ja) * | 2010-03-05 | 2014-07-02 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
JP2013125513A (ja) * | 2011-12-16 | 2013-06-24 | Samsung Electronics Co Ltd | 不揮発性半導体記憶装置及びその管理方法 |
US8937845B2 (en) * | 2012-10-31 | 2015-01-20 | Freescale Semiconductor, Inc. | Memory device redundancy management system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4688219A (en) * | 1984-08-17 | 1987-08-18 | Fujitsu Limited | Semiconductor memory device having redundant memory and parity capabilities |
US5262993A (en) * | 1990-11-16 | 1993-11-16 | Hitachi, Ltd. | Semiconductor memory having redundancy circuit with means to switch power from a normal memory block to a spare memory block |
US5278794A (en) * | 1991-10-14 | 1994-01-11 | Kabushiki Kaisha Toshiba | NAND-cell type electrically erasable and programmable read-only memory with redundancy circuit |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0670880B2 (ja) * | 1983-01-21 | 1994-09-07 | 株式会社日立マイコンシステム | 半導体記憶装置 |
JPS61150200A (ja) * | 1984-12-24 | 1986-07-08 | Nec Corp | メモリ回路 |
US4837747A (en) * | 1986-11-29 | 1989-06-06 | Mitsubishi Denki Kabushiki Kaisha | Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block |
US5193071A (en) * | 1988-12-22 | 1993-03-09 | Digital Equipment Corporation | Memory apparatus for multiple processor systems |
JP2737293B2 (ja) * | 1989-08-30 | 1998-04-08 | 日本電気株式会社 | Mos型半導体記憶装置 |
-
1995
- 1995-01-27 JP JP03140395A patent/JP3631277B2/ja not_active Expired - Fee Related
- 1995-12-22 TW TW084113768A patent/TW312789B/zh active
-
1996
- 1996-01-22 KR KR1019960001252A patent/KR100398166B1/ko not_active IP Right Cessation
- 1996-01-24 US US08/590,608 patent/US5691952A/en not_active Expired - Lifetime
- 1996-01-25 MY MYPI96000285A patent/MY119136A/en unknown
- 1996-01-26 SG SG9801172A patent/SG80593A1/en unknown
- 1996-01-26 SG SG1996000488A patent/SG34380A1/en unknown
-
1997
- 1997-02-25 US US08/804,683 patent/US5818792A/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4688219A (en) * | 1984-08-17 | 1987-08-18 | Fujitsu Limited | Semiconductor memory device having redundant memory and parity capabilities |
US5262993A (en) * | 1990-11-16 | 1993-11-16 | Hitachi, Ltd. | Semiconductor memory having redundancy circuit with means to switch power from a normal memory block to a spare memory block |
US5278794A (en) * | 1991-10-14 | 1994-01-11 | Kabushiki Kaisha Toshiba | NAND-cell type electrically erasable and programmable read-only memory with redundancy circuit |
Also Published As
Publication number | Publication date |
---|---|
JPH08203297A (ja) | 1996-08-09 |
KR960030410A (ko) | 1996-08-17 |
JP3631277B2 (ja) | 2005-03-23 |
KR100398166B1 (ko) | 2004-03-20 |
MY119136A (en) | 2005-04-30 |
US5818792A (en) | 1998-10-06 |
TW312789B (ja) | 1997-08-11 |
US5691952A (en) | 1997-11-25 |
SG34380A1 (en) | 1996-12-06 |
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