SG77185A1 - Selective etchiing of silicate - Google Patents

Selective etchiing of silicate

Info

Publication number
SG77185A1
SG77185A1 SG1998001474A SG1998001474A SG77185A1 SG 77185 A1 SG77185 A1 SG 77185A1 SG 1998001474 A SG1998001474 A SG 1998001474A SG 1998001474 A SG1998001474 A SG 1998001474A SG 77185 A1 SG77185 A1 SG 77185A1
Authority
SG
Singapore
Prior art keywords
etchiing
silicate
selective
selective etchiing
Prior art date
Application number
SG1998001474A
Other languages
English (en)
Inventor
David L Rath
Rangarajan Jagannathan
Kenneth J Mccullough
Harald F Okorn-Schmidt
Karen P Madden
Keith R Pope
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG77185A1 publication Critical patent/SG77185A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Surface Treatment Of Glass (AREA)
  • Weting (AREA)
SG1998001474A 1997-06-25 1998-06-19 Selective etchiing of silicate SG77185A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88191197A 1997-06-25 1997-06-25

Publications (1)

Publication Number Publication Date
SG77185A1 true SG77185A1 (en) 2000-12-19

Family

ID=25379455

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998001474A SG77185A1 (en) 1997-06-25 1998-06-19 Selective etchiing of silicate

Country Status (9)

Country Link
US (1) US6254796B1 (zh)
EP (1) EP0887323B1 (zh)
JP (1) JP2980585B2 (zh)
KR (1) KR19990006448A (zh)
CN (1) CN1133600C (zh)
DE (1) DE69801261T2 (zh)
MY (1) MY118712A (zh)
SG (1) SG77185A1 (zh)
TW (1) TW434196B (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1251565A (zh) * 1997-03-26 2000-04-26 西门子公司 具有至少一个凹穴的玻璃体制造方法
JP2000164586A (ja) * 1998-11-24 2000-06-16 Daikin Ind Ltd エッチング液
JP3903215B2 (ja) * 1998-11-24 2007-04-11 ダイキン工業株式会社 エッチング液
DE19914243A1 (de) * 1999-03-29 2000-10-05 Riedel De Haen Gmbh Verfahren zur Herstellung hochreiner Lösungen unter Verwendung von gasförmigem Fluorwasserstoff
US8153095B2 (en) 1999-03-29 2012-04-10 Honeywell International Inc. Method for producing highly pure solutions using gaseous hydrogen fluoride
JPWO2002053508A1 (ja) * 2000-12-27 2004-04-30 三輪　博 ガラスエッチング組成物を用いた装飾ガラスの製造法
JP4010819B2 (ja) * 2002-02-04 2007-11-21 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6835667B2 (en) * 2002-06-14 2004-12-28 Fsi International, Inc. Method for etching high-k films in solutions comprising dilute fluoride species
US7192860B2 (en) * 2002-06-20 2007-03-20 Honeywell International Inc. Highly selective silicon oxide etching compositions
US20030235986A1 (en) * 2002-06-20 2003-12-25 Wolfgang Sievert Silicon oxide etching compositions with reduced water content
JP4002154B2 (ja) * 2002-08-13 2007-10-31 東芝松下ディスプレイテクノロジー株式会社 液晶表示素子の製造方法およびその装置
TWI282814B (en) * 2002-09-13 2007-06-21 Daikin Ind Ltd Etchant and etching method
CA2544209C (en) * 2003-10-28 2011-10-18 Sachem, Inc. Cleaning solutions and etchants and methods for using same
WO2005047422A1 (en) * 2003-11-11 2005-05-26 Honeywell International Inc. Selective etch and cleaning chemistries, methods of production and uses thereof
US7445273B2 (en) * 2003-12-15 2008-11-04 Guardian Industries Corp. Scratch resistant coated glass article resistant fluoride-based etchant(s)
KR100606441B1 (ko) * 2004-04-30 2006-08-01 엘지.필립스 엘시디 주식회사 클리체 제조방법 및 이를 이용한 패턴 형성방법
JP4547613B2 (ja) * 2004-07-29 2010-09-22 スズキ株式会社 車両の排気装置
CN101223632A (zh) * 2005-05-13 2008-07-16 塞克姆公司 氧化物的选择性湿蚀刻
US8234804B1 (en) 2005-05-31 2012-08-07 Janet Rush Laser etched article with illuminable housing
DE102006030588A1 (de) * 2006-07-03 2008-01-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flüssigkeitsstrahlgeführtes Ätzverfahren zum Materialabtrag an Festkörpern sowie dessen Verwendung
KR100860367B1 (ko) * 2006-08-21 2008-09-25 제일모직주식회사 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액
US20090253268A1 (en) * 2008-04-03 2009-10-08 Honeywell International, Inc. Post-contact opening etchants for post-contact etch cleans and methods for fabricating the same
KR101281082B1 (ko) 2011-06-15 2013-07-09 삼성코닝정밀소재 주식회사 에칭 유리 및 그 제조방법
SG187274A1 (en) 2011-07-14 2013-02-28 3M Innovative Properties Co Etching method and devices produced using the etching method
JP6136186B2 (ja) * 2012-10-16 2017-05-31 日立化成株式会社 液状組成物
JP6131959B2 (ja) * 2012-10-16 2017-05-24 日立化成株式会社 エッチング材
JP6803018B2 (ja) * 2019-03-05 2020-12-23 株式会社Ｎｓｃ ガラス用エッチング液およびガラス基板製造方法
CN110482871A (zh) * 2019-09-17 2019-11-22 Oppo广东移动通信有限公司 玻璃件及其制备方法、玻璃壳体组件和电子设备

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
US4230523A (en) 1978-12-29 1980-10-28 International Business Machines Corporation Etchant for silicon dioxide films disposed atop silicon or metallic silicides
JPS55163860A (en) 1979-06-06 1980-12-20 Toshiba Corp Manufacture of semiconductor device
JPS56161677A (en) * 1980-05-16 1981-12-12 Hitachi Ltd Forming method for diaphragm
JPS58110078A (ja) * 1981-12-23 1983-06-30 Nec Corp 半導体装置の製造方法
US4395304A (en) * 1982-05-11 1983-07-26 Rca Corporation Selective etching of phosphosilicate glass
JPS58204540A (ja) * 1982-05-22 1983-11-29 Matsushita Electric Works Ltd 半導体装置の製法
DD238622A1 (de) * 1985-06-25 1986-08-27 Erfurt Mikroelektronik Selektives aetzmittel zum aetzen dotierter siliziumdioxid- oder silikatglasschichten
DE68913113T2 (de) 1988-09-24 1994-05-26 Shimano Kk Gangschaltungshebel für ein Fahrrad.
JP2632262B2 (ja) * 1991-08-20 1997-07-23 大日本スクリーン製造株式会社 シリコンウエハ上のコンタクトホール内の自然酸化膜の除去方法
KR950002233B1 (ko) * 1992-08-14 1995-03-15 김태환 유리에칭 조성물과 그를 이용한 유리표면의 에칭 방법
JP2833946B2 (ja) * 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
WO1997002958A1 (en) * 1995-07-10 1997-01-30 Advanced Chemical Systems International Organic amine/hydrogen fluoride etchant composition and method
US5824601A (en) 1997-06-30 1998-10-20 Motorola, Inc. Carboxylic acid etching solution and method
US6033996A (en) * 1997-11-13 2000-03-07 International Business Machines Corporation Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide

Also Published As

Publication number Publication date
CN1133600C (zh) 2004-01-07
JPH1160275A (ja) 1999-03-02
JP2980585B2 (ja) 1999-11-22
MY118712A (en) 2005-01-31
EP0887323B1 (en) 2001-08-01
DE69801261T2 (de) 2002-05-16
DE69801261D1 (de) 2001-09-06
KR19990006448A (ko) 1999-01-25
US6254796B1 (en) 2001-07-03
CN1203205A (zh) 1998-12-30
EP0887323A1 (en) 1998-12-30
TW434196B (en) 2001-05-16

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