SG73615A1 - Method and structure for contact to copper metallization in an insulating via on a semiconductor - Google Patents

Method and structure for contact to copper metallization in an insulating via on a semiconductor

Info

Publication number
SG73615A1
SG73615A1 SG1999001011A SG1999001011A SG73615A1 SG 73615 A1 SG73615 A1 SG 73615A1 SG 1999001011 A SG1999001011 A SG 1999001011A SG 1999001011 A SG1999001011 A SG 1999001011A SG 73615 A1 SG73615 A1 SG 73615A1
Authority
SG
Singapore
Prior art keywords
semiconductor
contact
copper metallization
insulating via
insulating
Prior art date
Application number
SG1999001011A
Other languages
English (en)
Inventor
Edward C Cooney
Stephen E Luce
William Joseph Cote
Ronald D Goldblatt
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG73615A1 publication Critical patent/SG73615A1/en

Links

SG1999001011A 1998-02-27 1999-02-23 Method and structure for contact to copper metallization in an insulating via on a semiconductor SG73615A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3163098A 1998-02-27 1998-02-27

Publications (1)

Publication Number Publication Date
SG73615A1 true SG73615A1 (en) 2000-06-20

Family

ID=21860551

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1999001011A SG73615A1 (en) 1998-02-27 1999-02-23 Method and structure for contact to copper metallization in an insulating via on a semiconductor

Country Status (5)

Country Link
JP (1) JPH11312734A (zh)
KR (1) KR19990072296A (zh)
CN (1) CN1149654C (zh)
SG (1) SG73615A1 (zh)
TW (1) TW396429B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223549A (ja) 1999-01-29 2000-08-11 Canon Inc 基板搬送装置、基板搬送方法、基板搬送用ハンド機構、灰化処理装置及び灰化処理方法
KR100445551B1 (ko) * 2001-12-21 2004-08-25 동부전자 주식회사 반도체 소자 제조공정의 금속 산화물 제거방법
JP3734447B2 (ja) * 2002-01-18 2006-01-11 富士通株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2004087807A (ja) * 2002-08-27 2004-03-18 Fujitsu Ltd 半導体装置及びその製造方法
US7223691B2 (en) * 2004-10-14 2007-05-29 International Business Machines Corporation Method of forming low resistance and reliable via in inter-level dielectric interconnect
CN101630656B (zh) * 2008-07-15 2012-01-25 中芯国际集成电路制造(上海)有限公司 形成接触孔及双镶嵌结构的方法
US8049327B2 (en) * 2009-01-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon via with scalloped sidewalls
JP2010153897A (ja) * 2010-02-22 2010-07-08 Fujitsu Semiconductor Ltd 半導体装置の製造方法
KR20230053548A (ko) * 2020-08-27 2023-04-21 램 리써치 코포레이션 서브트랙티브 (subtractive) 구리 에칭

Also Published As

Publication number Publication date
TW396429B (en) 2000-07-01
JPH11312734A (ja) 1999-11-09
CN1149654C (zh) 2004-05-12
KR19990072296A (ko) 1999-09-27
CN1227409A (zh) 1999-09-01

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