SG73615A1 - Method and structure for contact to copper metallization in an insulating via on a semiconductor - Google Patents
Method and structure for contact to copper metallization in an insulating via on a semiconductorInfo
- Publication number
- SG73615A1 SG73615A1 SG1999001011A SG1999001011A SG73615A1 SG 73615 A1 SG73615 A1 SG 73615A1 SG 1999001011 A SG1999001011 A SG 1999001011A SG 1999001011 A SG1999001011 A SG 1999001011A SG 73615 A1 SG73615 A1 SG 73615A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor
- contact
- copper metallization
- insulating via
- insulating
- Prior art date
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3163098A | 1998-02-27 | 1998-02-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG73615A1 true SG73615A1 (en) | 2000-06-20 |
Family
ID=21860551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1999001011A SG73615A1 (en) | 1998-02-27 | 1999-02-23 | Method and structure for contact to copper metallization in an insulating via on a semiconductor |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH11312734A (zh) |
KR (1) | KR19990072296A (zh) |
CN (1) | CN1149654C (zh) |
SG (1) | SG73615A1 (zh) |
TW (1) | TW396429B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000223549A (ja) | 1999-01-29 | 2000-08-11 | Canon Inc | 基板搬送装置、基板搬送方法、基板搬送用ハンド機構、灰化処理装置及び灰化処理方法 |
KR100445551B1 (ko) * | 2001-12-21 | 2004-08-25 | 동부전자 주식회사 | 반도체 소자 제조공정의 금속 산화물 제거방법 |
JP3734447B2 (ja) * | 2002-01-18 | 2006-01-11 | 富士通株式会社 | 半導体装置の製造方法および半導体装置の製造装置 |
JP2004087807A (ja) * | 2002-08-27 | 2004-03-18 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US7223691B2 (en) * | 2004-10-14 | 2007-05-29 | International Business Machines Corporation | Method of forming low resistance and reliable via in inter-level dielectric interconnect |
CN101630656B (zh) * | 2008-07-15 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | 形成接触孔及双镶嵌结构的方法 |
US8049327B2 (en) * | 2009-01-05 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via with scalloped sidewalls |
JP2010153897A (ja) * | 2010-02-22 | 2010-07-08 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法 |
KR20230053548A (ko) * | 2020-08-27 | 2023-04-21 | 램 리써치 코포레이션 | 서브트랙티브 (subtractive) 구리 에칭 |
-
1999
- 1999-01-26 CN CNB991012887A patent/CN1149654C/zh not_active Expired - Fee Related
- 1999-01-27 KR KR1019990002477A patent/KR19990072296A/ko not_active Application Discontinuation
- 1999-02-01 TW TW88101497A patent/TW396429B/zh not_active IP Right Cessation
- 1999-02-18 JP JP3969299A patent/JPH11312734A/ja not_active Withdrawn
- 1999-02-23 SG SG1999001011A patent/SG73615A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW396429B (en) | 2000-07-01 |
JPH11312734A (ja) | 1999-11-09 |
CN1149654C (zh) | 2004-05-12 |
KR19990072296A (ko) | 1999-09-27 |
CN1227409A (zh) | 1999-09-01 |
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